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CN217606911U - Semiconductor structure, semiconductor module, battery, and electric device - Google Patents

Semiconductor structure, semiconductor module, battery, and electric device Download PDF

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Publication number
CN217606911U
CN217606911U CN202221037997.4U CN202221037997U CN217606911U CN 217606911 U CN217606911 U CN 217606911U CN 202221037997 U CN202221037997 U CN 202221037997U CN 217606911 U CN217606911 U CN 217606911U
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heating
semiconductor
cooling
connection portion
semiconductor structure
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李兴星
陈智明
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Contemporary Amperex Technology Co Ltd
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Contemporary Amperex Technology Co Ltd
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Abstract

The application relates to a semiconductor structure, semiconductor module, battery and consumer, the semiconductor structure includes: a refrigerating end; the heating ends are arranged on one side of the cooling end at intervals and are electrically connected with the cooling end; and the heat insulator is filled between the refrigerating end and the heating end so as to prevent heat transfer between the refrigerating end and the heating end. Through setting up the cooling end and heating end separately and set up the insulator between the two, can completely cut off the heat conduction between the lower cooling end of temperature and the higher heating end of temperature, avoided the heat or the cold volume of cooling end and heating end to neutralize each other, effectively improved the refrigeration of semiconductor structure or the efficiency of heating.

Description

Semiconductor structure, semiconductor module, battery, and electric device
Technical Field
The application relates to the field of battery heating and cooling, in particular to a semiconductor structure, a semiconductor assembly, a battery and an electric device.
Background
Semiconductor refrigeration is also called thermoelectric refrigeration, and utilizes P-N junction formed by special semiconductor material to form thermoelectric couple pair to produce thermoelectric effect (also called Peltier effect). The thermoelectric effect is a phenomenon in which an electric current or electric charge is accumulated when electrons (holes) in a heated object move from a high temperature region to a low temperature region in accordance with a temperature gradient.
However, the conventional thermoelectric semiconductor devices manufactured by using the above-described principle still have a disadvantage of low electric energy conversion efficiency during cooling or heating due to structural defects, and thus are limited to small-sized electric appliances without considering energy efficiency ratio in application, and further application of the semiconductor cooling and heating technology is greatly restricted.
SUMMERY OF THE UTILITY MODEL
In view of the above problems, the present application provides a semiconductor structure, a semiconductor module, a battery, and an electric device, which have a high energy efficiency ratio and promote further popularization and application of semiconductor cooling and heating technologies.
In a first aspect, the present application provides a semiconductor structure comprising:
a refrigerating end;
the heating ends are arranged on one side of the cooling end at intervals and are electrically connected with the cooling end; and
and the heat insulator is filled between the refrigerating end and the heating end so as to prevent heat transfer between the refrigerating end and the heating end.
In the technical scheme of this application embodiment, through setting up the cooling end with heating end separation and set up the insulator between the two, can isolate the heat conduction between the lower cooling end of temperature and the higher heating end of temperature, avoid the heat or the cold volume of cooling end and heating end to neutralize each other, effectively improved the refrigeration of semiconductor structure or heated efficiency. In addition, the heat insulator can also play a supporting role, so that a certain distance is always kept between the refrigerating end and the heating end.
In some embodiments, the semiconductor structure further comprises an electrical connection between the cooling end and the heating end;
the heat insulator is filled in the self gap of the electric connector; and/or
The insulator is filled in a gap between the electric connector and the refrigerating end; and/or
The heat insulator is filled in a gap between the electric connector and the heating end.
So design, semiconductor construction's refrigeration end and heating end pass through electric connector electric connection, have satisfied the current transmission requirement of refrigeration end and heating end. The heat insulator can be arranged according to the shape of the electric connector and the position relation between the electric connector and the refrigerating end and the heating end, so that the heat transfer between the refrigerating end and the heating end is blocked while the electric connection between the refrigerating end and the heating end is realized.
In some embodiments, the electrical connection comprises:
the first connecting part is attached to the surface of the refrigerating end surface facing the heating end;
the second connecting part is attached to the surface of the heating end facing the cooling end; and
the middle connecting part is connected between the first connecting part and the second connecting part and encloses to form a filling gap;
wherein the insulator is filled in the filling gap. Therefore, when the refrigerating end and the heating end are electrically connected through the electric connecting piece, the heat can be effectively limited to be transferred through the electric connecting piece through the heat insulator.
In some embodiments, the first connection portion is in surface contact with the cooling end, and/or the second connection portion is in surface contact with the heating end. Because the first connecting part is in surface contact with the refrigerating end and the second connecting part is in surface contact with the heating end, the overcurrent capacity of the semiconductor is ensured, and the current between the refrigerating end and the heating end can stably circulate.
In some embodiments, an orthographic projection of the refrigeration end on a plane of the first connection is located within the first connection; and/or
And the orthographic projection of the heating end on the plane of the second connecting part is positioned in the second connecting part.
So, the area of the contact surface of refrigeration end and first connecting portion equals the area of the lower surface of refrigeration end, and the area of contact of refrigeration end and second connecting portion equals the area of the upper surface of refrigeration end, so the area of contact of refrigeration end and first connecting portion, refrigeration end and second connecting portion has reached the maximize to semiconductor flow capacity has been ensured.
In some embodiments, two ends of the intermediate connecting portion are respectively connected to the edges of the same side of the first connecting portion and the second connecting portion. So, intermediate junction portion exposes in the external environment, consequently can distribute to the external environment through the heat of intermediate junction portion transmission in to effectively reduce the heat through electric connector transmission.
In some embodiments, the electrical connector includes a metal wire, two ends of the metal wire are respectively connected to the cooling end and the heating end, and the heat insulator is filled in a gap between the metal wire, the cooling end and the heating end. Therefore, when the metal lead is electrically connected with the refrigerating end and the heating end, the heat can be effectively limited to be transferred through the electric connector through the heat insulator. The heat insulator can be coated outside the metal wire, so that the metal wire is protected while heat penetration is isolated.
In a second aspect, the present application provides a semiconductor assembly, which includes the semiconductor structures in the above embodiments, all the semiconductor refrigeration modules are connected in series in sequence, a part of the semiconductor refrigeration modules are formed by N-type semiconductors, and the rest of the semiconductor refrigeration modules are formed by P-type semiconductors.
In some embodiments, the semiconductor refrigeration module further comprises a conductive gasket for connecting the refrigeration ends of two adjacent semiconductor refrigeration modules. So, semiconductor construction's refrigerating end and heating end accessible conductive gasket and adjacent semiconductor construction's refrigerating end and heating end electric connection, two refrigerating ends and two heating ends all realize the electron and jump through conductive gasket to make semiconductor component realize refrigeration and heating function.
In a third aspect, the present application provides a battery comprising the semiconductor assembly of the above embodiment.
In a fourth aspect, the present application provides an electric device, comprising the battery in the above embodiments, wherein the battery is used for providing electric energy.
The foregoing description is only an overview of the technical solutions of the present application, and the present application can be implemented according to the content of the description in order to make the technical means of the present application more clearly understood, and the following detailed description of the present application is given in order to make the above and other objects, features, and advantages of the present application more clearly understandable.
Drawings
Various additional advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Moreover, like reference numerals are used to refer to like elements throughout. In the drawings:
FIG. 1 is a schematic structural view of a vehicle according to some embodiments of the present application;
FIG. 2 is a schematic diagram of a cell according to some embodiments of the present application;
FIG. 3 is a schematic structural diagram of a semiconductor device according to some embodiments of the present application;
fig. 4 is a front view of a semiconductor assembly of some embodiments of the present application;
FIG. 5 is a schematic structural diagram of a semiconductor structure according to some embodiments of the present application;
FIG. 6 is a schematic structural view of an electrical connector according to some embodiments of the present application;
FIG. 7 is a schematic structural diagram of a semiconductor device according to some embodiments of the present application;
fig. 8 is a front view of a semiconductor assembly in accordance with some embodiments of the present application.
The reference numbers in the detailed description are as follows:
10000. a vehicle; 1000. a battery; 2000. a controller; 3000. a motor;
100. a semiconductor element; 10. a semiconductor structure; 10a, a first semiconductor structure; 10b, a second semiconductor structure; 11. a refrigerating end; 11a, a first refrigerating end; 11b, a first refrigerating end; 12. heating end manufacturing; 12a, a second heating end; 12b, a second heating end; 13. a heat insulator; 14. an electrical connection; 141. a first connection portion; 142. a second connecting portion; 143. an intermediate connecting portion; 144. filling the gap; 20. a conductive pad; 200. a box body; 300. a battery cell; 400. a bottom guard plate.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are merely used to more clearly illustrate the technical solutions of the present application, and therefore are only examples, and the protection scope of the present application is not limited thereby.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "including" and "having," and any variations thereof, in the description and claims of this application and the description of the above figures are intended to cover non-exclusive inclusions.
In the description of the embodiments of the present application, the technical terms "first", "second", and the like are used only for distinguishing different objects, and are not to be construed as indicating or implying relative importance or implicitly indicating the number, specific order, or primary-secondary relationship of the technical features indicated. In the description of the embodiments of the present application, "a plurality" means two or more unless specifically defined otherwise.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
In the description of the embodiments of the present application, the term "and/or" is only one kind of association relationship describing the association object, and means that three relationships may exist, for example, a and/or B, and may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter associated objects are in an "or" relationship.
In the description of the embodiments of the present application, the term "plurality" refers to two or more (including two), and similarly, "plural sets" refers to two or more (including two), and "plural pieces" refers to two or more (including two).
In the description of the embodiments of the present application, the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate orientations and positional relationships that are based on the orientations and positional relationships shown in the drawings, and are used for convenience in describing the embodiments of the present application and for simplification of the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus, should not be construed as limiting the embodiments of the present application.
In the description of the embodiments of the present application, unless otherwise explicitly stated or limited, the terms "mounted," "connected," "fixed," and the like are used in a broad sense, and for example, may be fixedly connected, detachably connected, or integrated; mechanical connection or electrical connection is also possible; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the embodiments of the present application can be understood by those of ordinary skill in the art according to specific situations.
The power battery is used as the power source of the electric automobile, and the working performance and the service life of the power battery are greatly influenced by the environmental temperature. Under a high-temperature environment, the generation speed of irreversible reactants in the battery is accelerated, and the increase of the irreversible reactants causes the accelerated reduction of the available capacity of the battery; under the low-temperature environment, the internal resistance of the battery is increased, the discharge voltage platform is reduced, the available capacity is reduced, the charge-discharge efficiency of the battery is obviously reduced, and the battery is damaged to a certain extent. Therefore, the method has important significance for prolonging the service life of the power battery system of the electric automobile, improving the high-low temperature performance of the power battery and ensuring that the power battery system works at a proper environmental temperature.
A conventional thermoelectric semiconductor device for adjusting the operating temperature of a battery generally includes an N-type thermoelectric semiconductor element and a P-type thermoelectric semiconductor element, and the N-type and P-type thermoelectric semiconductor elements are electrically connected in series via a conductor to form a cooling thermopile.
When the direct current power supply is connected and the current flows from the N-type thermoelectric semiconductor element to the P-type thermoelectric semiconductor element, the temperature at the junction surface of the P-type thermoelectric semiconductor element and the N-type thermoelectric semiconductor element connected by the conductor is reduced and absorbs heat, thereby forming the cold surface of the thermopile. At the other end of the same thermoelectric element, the current flows in the direction that the P-type thermoelectric semiconductor element flows to the N-type thermoelectric semiconductor element through the power supply, and the temperature at the junction surface of the P-type thermoelectric semiconductor element and the N-type thermoelectric semiconductor element connected by the conductor rises to release heat, thereby constituting the hot surface of the thermopile. By means of heat exchange equipment and other heat transfer means, the hot side of the thermopile is continuously radiated and kept at a certain temperature, and the cold side of the thermopile is put into a working environment needing temperature reduction to absorb heat for temperature reduction, so that the basic working principle of thermoelectric refrigeration is formed.
The inventor has noticed that the cold side and the hot side of the thermoelectric semiconductor device are closely connected through the semiconductor itself, and due to the inherent thermal conduction physical characteristics of the thermoelectric semiconductor material, the hot side and the cold side conduct heat through the semiconductor itself, causing heat neutralization at the cold side and the hot side, thereby resulting in a significant reduction in the efficiency of cooling or heating of the thermoelectric semiconductor device.
In order to improve the cooling or heating performance of the thermoelectric semiconductor device, the inventor tries to reduce the heat conduction performance of the thermoelectric semiconductor material by adopting the technologies of adjusting the material formula, adjusting the material doping concentration, changing the material unit cell structure, changing the material grain size, changing the material phonon scattering property, adjusting the carrier concentration and the like, but still cannot effectively solve the problem of poor performance caused by heat conduction in the thermoelectric semiconductor material.
In view of the above, the inventors have conducted extensive studies and have devised a semiconductor structure that can prevent heat conduction between a cooling side and a heating side by providing an insulator between the cooling side and the heating side. In such a semiconductor structure, the cooling end and the heating end may be insulated by an insulating material therebetween, thereby significantly reducing heat exchange inside the semiconductor structure due to its inherent physical properties without changing the material properties of the semiconductor structure, and maximizing the performance of the semiconductor structure.
The semiconductor structure disclosed in this embodiment can be used in, but is not limited to, a battery of an electric device such as a vehicle, a ship, or an aircraft. The power supply system of the electric device can be formed by using the battery with the semiconductor structure, so that the temperature of the battery is kept stable, and the battery can work at a safe temperature.
The embodiment of the application provides an electric device using a battery as a power supply, wherein the electric device can be but is not limited to a mobile phone, a tablet, a notebook computer, an electric toy, an electric tool, a battery car, an electric automobile, a ship, a spacecraft and the like. The electric toy may include a stationary or mobile electric toy, such as a game machine, an electric car toy, an electric ship toy, an electric airplane toy, and the like, and the spacecraft may include an airplane, a rocket, a space shuttle, a spacecraft, and the like.
For convenience of description, the following embodiments are described by taking an electric device as an example of a vehicle according to an embodiment of the present application.
Referring to fig. 1, a vehicle 10000 may be a fuel automobile, a gas automobile, or a new energy automobile, and the new energy automobile may be a pure electric automobile, a hybrid electric automobile, or a range-extended automobile. The inside of the vehicle 10000 is provided with a battery 1000, and the battery 1000 may be provided at the bottom or the head or the tail of the vehicle 10000. The battery 1000 may be used for power supply of the vehicle 10000, and for example, the battery 1000 may serve as an operation power source of the vehicle 10000. The vehicle 10000 can further include a controller 2000 and a motor 3000, wherein the controller 2000 is used for controlling the battery 1000 to supply power to the motor 3000, for example, for starting, navigation and operation power demand of the vehicle 10000.
In some embodiments of the present application, the battery 1000 may be used as an operating power source of the vehicle 10000, and may also be used as a driving power source of the vehicle 10000 to provide driving power for the vehicle 10000 instead of or partially instead of fuel or natural gas.
Referring to fig. 2, fig. 2 is an exploded view of a battery 1000 according to some embodiments of the present disclosure. The battery 1000 includes a case 200, a battery cell 300, a backplate 400, and a semiconductor package 100. The case 200 serves to provide a receiving space for the battery cells 200 and the semiconductor packages 100. The number of the battery cells 300 may be multiple, and the multiple battery cells 300 may be connected in series or in parallel or in series-parallel, where in series-parallel refers to that the multiple battery cells 300 are connected in series or in parallel. The plurality of battery cells 300 can be directly connected in series or in parallel or in series-parallel, and the whole formed by the plurality of battery cells 300 is accommodated in the box body 200; of course, the battery 1000 may also be a battery module formed by connecting a plurality of battery cells 300 in series, in parallel, or in series-parallel, and a plurality of battery modules are connected in series, in parallel, or in series-parallel to form a whole and accommodated in the case 200. Wherein each battery cell 300 may be a secondary battery or a primary battery; but is not limited to, a lithium sulfur battery, a sodium ion battery, or a magnesium ion battery. The battery cell 300 may be cylindrical, flat, rectangular parallelepiped, or other shape.
The bottom guard plate 400 is installed at the outer side of the bottom of the box body 200, and is used for protecting the bottom of the box body 200 and preventing other structures from directly rubbing, impacting and colliding the bottom of the box body 200. The semiconductor assembly 100 is located between the backplate 400 and the case 200, and the semiconductor assembly 100 can regulate the temperature of the battery cells 300 in the case 200 by heat conduction. The semiconductor assembly 100 includes a plurality of semiconductor structures 10 connected in series with each other.
Referring to fig. 3 and 4, a semiconductor structure 10 is provided according to some embodiments of the present application. The semiconductor structure 10 includes a cooling end 11, a heating end 12 and a heat insulator 13, wherein the heating end 12 is disposed at one side of the cooling end 11 at an interval and electrically connected to the cooling end 11, and the heat insulator 13 is filled between the cooling end 11 and the heating end 12 to prevent heat transfer between the cooling end 11 and the heating end 12.
The cooling end 11 and the heating end 12 are both formed of a semiconductor material, which is a material having a conductive property between a conductor and an insulator at normal temperature. After the direct current power supply is switched on, electronic transition occurs in the refrigerating end 11 and the heating end 12, the refrigerating end 11 absorbs heat to cause the temperature of the refrigerating end 11 to be reduced so as to realize the refrigerating function, and the heating end 12 releases heat to cause the temperature of the heating end 12 to be increased so as to realize the heating function.
The heating end 12 is disposed at one side of the cooling end 11 at an interval, that is, the heating end 12 is disposed below the cooling end 11, and the cooling end 11 and the heating end 12 are not in contact with each other but have a certain distance, and the distance may be set as required.
The shapes of the heating side 11 and the heating side 12 are not limited and may be set as required. In some embodiments, as shown in fig. 1, the cooling end 11 and the heating end 12 are solid cubic structures with the same shape and size. In other embodiments, the cooling end 11 and the heating end 12 may be cylindrical, prismatic, or other shapes.
As shown in fig. 1, the X direction in the figure is the length direction of the cooling end 11 and the heating end 12, the Y direction in the figure is the width direction of the cooling end 11 and the heating end 12, and the Z direction in the figure is the height direction of the cooling end 11 and the heating end 12, and is also the spacing direction of the cooling end 11 and the heating end 12.
The heat insulator 13 is formed of a heat insulating material filled between the cooling side 11 and the heating side 12, and the heat insulating material has a good function of insulating heat conduction, thereby preventing heat conduction between the cooling side 11 and the heating side 12.
By arranging the refrigerating end 11 and the heating end 12 separately and arranging the heat insulator 13 between the refrigerating end 11 and the heating end 12, heat conduction between the refrigerating end 11 with lower temperature and the heating end 12 with higher temperature can be isolated, mutual neutralization of heat and cold of the refrigerating end 11 and the heating end 12 is avoided, and the refrigerating or heating efficiency of the semiconductor structure 10 is effectively improved. In addition, the insulator 13 can also serve as a support to keep a certain distance between the cooling end 11 and the heating end 12.
According to some embodiments of the present application, optionally, the semiconductor structure 10 further includes an electrical connection 14, the electrical connection 14 is located between the cooling end 11 and the heating end 12, and the thermal insulator 13 is filled in a gap of the electrical connection 14; and/or insulation 13 fills the gap between electrical connector 14 and refrigeration end 11; and/or an insulator 13 fills the gap between the electrical connector 14 and the heating tip 12.
The electrical connection member 14 is a connection member having a function of allowing electric charge to pass through to form electric current, and in order to satisfy the electrical connection requirement of the cooling terminal 11 and the heating terminal 12, the electrical connection member 14 is formed of a material having a good electrical conductivity. The electrical connection 14 is located between the refrigeration end 11 and the heating end 12, which means that the electrical connection 14 is located in a space between the refrigeration end 11 and the heating end 12, that is, the refrigeration end 11 is located above the electrical connection 14, and the heating end 12 is located below the electrical connection 14.
"the electrical connection member 14 self-gap" means the space formed by the configuration of the electrical connection member 14 itself, the edge of the electrical connection member 14 self-gap being defined by the surface of the electrical connection member 14, the shape of the electrical connection member 14 self-gap being dependent on the shape of the electrical connection member 14 itself. By "gap between the electrical connection member 14 and the refrigeration end 11" is meant a space formed by the configuration between the surface of the electrical connection member 14 and the end face of the refrigeration end 11, the edge of the gap being defined by the surface of the electrical connection member 14 and the end face of the refrigeration end 11 together. By "gap between the electrical connector 14 and the heating tip 12" is meant the space formed by the configuration between the outer surface of the electrical connector 14 and the end face of the heating tip 12, the edge of the gap being defined by the surface of the electrical connector 14 and the end face of the heating tip 12 together.
The cooling end 11 and the heating end 12 of the semiconductor structure 10 are electrically connected through the electric connector 14, and the current transmission requirements of the cooling end 11 and the heating end 12 are met. The heat insulator 13 may be disposed according to the shape of the electrical connector 14 and the positional relationship between the electrical connector and the cooling end 11 and the heating end 12, so as to block heat transfer between the cooling end 11 and the heating end 12 while achieving electrical connection between the cooling end 11 and the heating end 12.
As shown in fig. 5 and 6, according to some embodiments of the present application, optionally, the electrical connector 14 includes a first connection portion 141, a second connection portion 142, and an intermediate connection portion 143, the first connection portion 141 is attached to a surface of the refrigeration end 11 facing the refrigeration end 12, the second connection portion 142 is attached to a surface of the refrigeration end 12 facing the refrigeration end 11, and the intermediate connection portion 143 is connected between the first connection portion 141 and the second connection portion 142 and encloses a filling gap 144. The heat insulator 13 is filled in the filling gap 144.
The first connection portion 141 refers to one end of the electrical connector 14 connected to the cooling end 11, the second connection portion 142 refers to one end of the electrical connector 14 connected to the cooling end 12, and the intermediate connection portion 143 refers to the remaining portion of the electrical connector 14 connecting the first connection portion 141 and the second connection portion 142. It is understood that the electrical connector 14 is integrally formed, and the first connection portion 141, the second connection portion 142 and the intermediate connection portion 143 are formed by bending the electrical connector 14. In other embodiments, the electrical connector 14 is a split type, and the first connection portion 141 and the second connection portion 142 are respectively mounted on two ends of the middle connection portion 143.
In some embodiments, the first connecting portion 141, the second connecting portion 142 and the middle connecting portion 143 each have a sheet-like structure with a thickness of 0.1mm to 2mm, and a distance between the first connecting portion 141 and the second connecting portion 142 is 0.3mm to 10mm. The thickness direction of the first connection portion 141 and the second connection portion 142 is parallel to the spacing direction between the cooling end 11 and the heating end 12 (i.e., the Z direction in fig. 1), and the thickness direction of the intermediate connection portion 143 is perpendicular to the spacing direction between the cooling end 11 and the heating end 12 (i.e., the Z direction in fig. 1).
The term "attached" refers to attachment, where the surface of the cooling end 11 facing the cooling end 12 refers to the lower surface of the cooling end 11 closest to the cooling end 12, and the surface of the cooling end 12 facing the cooling end 11 refers to the upper surface of the cooling end 12 closest to the cooling end 12. In this way, at least a part of the surface of the first connection portion 141 and at least a part of the lower surface of the cooling end 11 are attached to each other, and at least a part of the surface of the second connection portion 142 and at least a part of the upper surface of the heating end 12 are attached to each other.
The filling gap 144 refers to a space formed by the first connection portion 141, the second connection portion 142, and the intermediate connection portion 143, and an edge of the filling gap 144 is defined by a surface of the first connection portion 141, a surface of the second connection portion 142, and a surface of the intermediate connection portion 143.
The filling of the thermal insulator 13 in the filling gap 144 may mean that the thermal insulator 13 may completely occupy all the space of the filling gap 144, no space exists between the thermal insulator 13 and the first connection portion 141, the second connection portion 142, and the intermediate connection portion 143, or may mean that the thermal insulator 13 occupies a part of the space of the filling gap 144, and there may be spaces of different shapes between the thermal insulator 13 and the first connection portion 141, the second connection portion 142, or the intermediate connection portion 143.
In this way, while the refrigeration end 11 and the heating end 12 are electrically connected by the electrical connection member 14, the heat transfer through the electrical connection member 14 can be effectively restricted by the insulator 13. Moreover, since the first connection portion 141, the second connection portion 142 and the intermediate connection portion 143 are each in a sheet-like structure having a thickness of 0.1mm to 2mm, it is possible to prevent an excessive resistance of the electrical connection member 14 due to an excessive thickness of the electrical connection member 14 and to prevent a reduction in the blocking effect due to excessive heat transfer through the electrical connection member 14. In addition, since the distance between the first connection portion 141 and the second connection portion 142 is 0.3mm to 10mm, it is possible to prevent the thermal insulator 13 from having an excessively small thickness and thus failing to effectively block heat conduction, and to prevent the electrical connector 14 from having an excessively long length and thus increasing the resistance of the electrical connector 14.
According to some embodiments of the present application, optionally, the first connection portion 141 and the cooling end 11 are in surface contact, and/or the second connection portion 142 and the heating end 12 are in surface contact.
The surface contact means that the first connection portion 141 and the cooling end 11, the second connection portion 142 and the heating end 12 have a certain amount of contact area therebetween, and is not point contact or line contact.
Since the first connection portion 141 and the cooling end 11 are in surface contact, and the second connection portion 142 and the heating end 12 are in surface contact, the overcurrent capacity of the semiconductor structure 10 is ensured, so that the current between the cooling end 11 and the heating end 12 can stably flow.
According to some embodiments of the present application, optionally, an orthographic projection of the cooling end 11 on the plane of the first connection portion 141 is located within the first connection portion 141; and/or the orthographic projection of the heating end 12 on the plane of the second connecting portion 142 is located within the second connecting portion 142.
The plane of the first connection portion 141 is a plane perpendicular to the third direction (i.e., the Z direction in fig. 1), and the orthographic projection of the first connection portion 141 is located inside the orthographic projection of the first connection portion 141. The plane of the second connecting portion 142 is a plane perpendicular to the third direction (i.e., the Z direction in fig. 1), and the orthographic projection of the second connecting portion 142 is located inside the second connecting portion 142, which means that the edge of the orthographic projection does not exceed the edge of the second connecting portion 142. That is, the lower surface of the cooling terminal 11 facing the cooling terminal 12 completely contacts the first connection portion 141, the upper surface of the cooling terminal 12 facing the cooling terminal 11 completely contacts the second connection portion 142, and the edge of the first connection portion 141 may be flush with or may exceed the edge of the lower surface of the cooling terminal 11. The edge of the second connecting portion 142 may be flush with the edge of the upper surface of the heating end 12 or may extend beyond the edge of the upper surface of the heating end 12.
Therefore, the area of the contact surface of the cooling terminal 11 and the first connection portion 141 is equal to the area of the lower surface of the cooling terminal 11, and the area of the contact surface of the heating terminal 12 and the second connection portion 142 is equal to the area of the upper surface of the cooling terminal 11, so that the contact area of the cooling terminal 11 and the first connection portion 141, and the contact area of the heating terminal 12 and the second connection portion 142 are maximized, thereby ensuring the overcurrent capacity of the semiconductor construct 10.
According to some embodiments of the present application, optionally, two ends of the intermediate connection portion 143 are respectively connected to edges of the same side of the first connection portion 141 and the second connection portion 142. As shown in fig. 1, the same side of the first connection portion 141 and the second connection portion 142 refers to a right side of the first connection portion 141 in the first direction in fig. 1 and a right side of the second connection portion 142 in the first direction in fig. 1.
In this way, the electrical connector 14 has a half-square structure, the heat insulator 13 is filled between the first connection portion 141 and the second connection portion 142 and positioned on the left side of the intermediate connection portion 143 in the first direction in fig. 1, the heat insulator 13 has a cubic shape, the upper surface of the heat insulator 13 is covered with the first connection portion 141, the lower surface of the heat insulator 13 is covered with the second connection portion 142, the right surface of the heat insulator 13 is covered with the intermediate connection portion 143, and the front, rear, and left surfaces of the heat insulator 13 are exposed to the external environment.
In some embodiments, the two ends of the intermediate connection portion 143 may be connected to different positions of the first connection portion 141 and the second connection portion 142, respectively, so as to form the electrical connector 14 into different shapes. For example, since both ends of the intermediate connection portion 143 can be connected to the middle position of the first connection portion 141 and the middle position of the second connection portion 142 in the first direction, respectively, the filling gap 144 is divided into two left and right portions by the intermediate connection portion 143, and the heat insulator 13 is divided into two portions and is filled in the left and right sides of the intermediate connection portion 143, respectively.
In some embodiments, in order to further improve the heat insulation effect of the heat insulator 13, communication holes may be further opened through the first connection portion 141, the second connection portion 142, and the intermediate connection portion 143, and the heat insulator 13 may be filled in the communication holes to further improve the heat insulation effect. It is understood that the shape, number and arrangement position of the communication holes are not limited, and may be arranged as needed to meet different requirements.
In this manner, the intermediate connection part 143 is exposed to the external environment, and thus heat transferred through the intermediate connection part 143 can be dissipated to the external environment, thereby effectively reducing heat transferred through the electrical connector 14.
As shown in fig. 7, according to some embodiments of the present application, the electrical connector 14 is a metal wire, two ends of the metal wire are respectively connected to the cooling end 11 and the heating end 12, and the heat insulator 13 is filled in a gap between the metal wire, the cooling end 11 and the heating end 12.
The metal wire is a copper wire capable of transmitting current, and the metal wire can be connected to the lower surface of the cooling end 11 facing the heating end 12 and the upper surface of the heating end 12 facing the cooling end 11 by welding, elastic contact, connector assembly and the like.
In this way, while the refrigeration terminal 11 and the heating terminal 12 are electrically connected by the metal wire, the heat transfer through the electrical connection member 14 can be effectively restricted by the insulator 13. The heat insulator 13 may be coated outside the metal wire, so as to protect the metal wire while insulating heat.
According to some embodiments of the present application, referring to fig. 1, the present application further provides a semiconductor assembly 100, which includes a plurality of semiconductor structures 10 according to any one of the above schemes, all of the semiconductor structures 10 are sequentially connected in series, the cooling terminals 11 and the heating terminals 12 of some of the semiconductor structures 10 are formed of N-type semiconductors, the cooling terminals 11 and the heating terminals 12 of the rest of the semiconductor structures 10 are formed of P-type semiconductors, and the cooling terminal 11 and the heating terminal 12 of any one of the semiconductor structures 10 are formed of the same semiconductor material.
The N-type semiconductor is a doped semiconductor in which an acceptor impurity is doped in a semiconductor, and the P-type semiconductor is a doped semiconductor in which a donor impurity is doped in a semiconductor.
All the semiconductor structures 10 are arranged at intervals, and in two adjacent semiconductor structures 10, one semiconductor structure 10 is a first semiconductor structure 10 of which a refrigerating end 11 and a heating end 12 are formed by an N-type semiconductor, and the other semiconductor structure 10 is a second semiconductor structure 10 of which a refrigerating end 11 and a heating end 12 are formed by a P-type semiconductor. The first semiconductor structures 10 and the second semiconductor structures 10 are alternately arranged, wherein the cooling terminal 11 of one first semiconductor structure 10 is electrically connected with the cooling terminal 11 of the adjacent second semiconductor structure 10, and the heating terminal 12 of the first semiconductor structure 10 is electrically connected with the heating terminal 12 of the adjacent second semiconductor structure 10.
As shown in fig. 8, the semiconductor structure 10 in which the cooling terminal 11 and the heating terminal 12 are formed of N-type semiconductors is defined as a first semiconductor structure 10a, the first semiconductor structure 10a includes a first cooling terminal 11a and a first heating terminal 12a, the semiconductor structure 10 in which the cooling terminal 11 and the heating terminal 12 are formed of P-type semiconductors is defined as a second semiconductor structure 10b, and the second semiconductor structure 10b includes a second cooling terminal 11b and a second heating terminal 12b. The first semiconductor structures 10a and the second semiconductor structures 10b are alternately arranged, wherein the first cooling end 11a of one first semiconductor structure 10a is electrically connected with the second cooling end 11b of another adjacent second semiconductor structure 10b, and the first cooling end 12a of the first semiconductor structure 10a is electrically connected with the second cooling end 12b of another adjacent second semiconductor structure 10 b.
After the dc power supply is turned on, since the electron levels in the P-type semiconductor and the N-type semiconductor are different and the electron level in the P-type semiconductor is smaller than the electron level in the N-type semiconductor, a certain amount of energy needs to be absorbed when the electrons transit from the second semiconductor structure 10b to the first semiconductor structure 10a, and thus the temperatures of the first cooling port 11a and the second cooling port 11b decrease. When the electrons transit from the first semiconductor structure 10a to the second semiconductor structure 10b, heat needs to be released, and therefore the temperatures of the first heating terminal 12a and the second heating terminal 12b rise. When the cold energy of the first refrigerating end 11a (the second refrigerating end 11 b) and the heat energy of the first refrigerating end 12a (the second refrigerating end 12 b) are transferred to the other end, the heat insulator 13 located therebetween can effectively block the transfer of the heat energy and the cold energy, thereby preventing the two from being neutralized with each other.
According to some embodiments of the present application, optionally, the semiconductor refrigeration module further includes a conductive pad 20, and the conductive pad 20 is used for connecting the refrigeration terminals 11 of two adjacent semiconductor structures 10 and the heating terminals 12 of two adjacent semiconductor refrigeration modules.
The conductive pad 20 is formed of a conductive metal material such as copper having good conductivity, the conductive pad 20 has a rectangular sheet-like structure, a length direction of the conductive pad 20 extends in a first direction, a width direction of the conductive pad 20 extends in a second direction, and a thickness direction of the conductive pad 20 extends in a third direction. Opposite ends of the conductive pads 20 in the first direction are respectively attached to the upper surfaces of the cooling terminals 11 or the lower surfaces of the heating terminals 12 of the two semiconductor structures 10 to electrically connect the two. In other embodiments, the conductive pad 20 may also be formed of a non-metallic material such as graphene with good conductive properties.
Thus, the cooling end 11 and the heating end 12 of the semiconductor structure 10 can be electrically connected to the cooling end 11 and the heating end 12 of the adjacent semiconductor structure 10 through the conductive gasket 20, and the two cooling ends 11 and the two heating ends 12 all realize electronic transition through the conductive gasket 20, so that the semiconductor assembly 100 realizes cooling and heating functions.
According to some embodiments of the present application, there is also provided a battery 1000 comprising the semiconductor assembly 100 according to any of the above aspects.
According to some embodiments of the present application, there is also provided an electric device, including the battery 1000 according to any of the above aspects, and the battery 1000 is used for providing electric energy for the electric device.
The powered device may be any of the aforementioned devices or systems that employ the battery 1000.
According to some embodiments of the present application, the present application provides a semiconductor structure 10, including a cooling end 11, a heating end 12, an electrical connector 14 and an insulator 13, where the cooling end 11 and the heating end 12 are disposed at an interval, the electrical connector 14 is in a half-mouth structure, and includes a first connection portion 141, a second connection portion 142 and an intermediate connection portion 143 connected to an edge of a same side of the first connection portion 141 and the second connection portion 142, the first connection portion 141 is in surface contact with the cooling end 11, the second connection portion 142 is in surface contact with the heating end 12, the first connection portion 141, the second connection portion 142 and the intermediate connection portion 143 jointly define a filling gap 144, and the insulator 13 is filled in the filling gap 144 to isolate heat conduction between the cooling end 11 and the heating end 12, so as to maximize performance of the semiconductor structure 10.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; these modifications and substitutions do not depart from the spirit of the embodiments of the present application, and they should be construed as being included in the scope of the claims and description of the present application. In particular, the technical features mentioned in the embodiments can be combined in any way as long as there is no structural conflict. The present application is not intended to be limited to the particular embodiments disclosed herein but is to cover all embodiments that may fall within the scope of the appended claims.

Claims (11)

1. A semiconductor structure, comprising:
a refrigerating end;
the heating ends are arranged on one side of the cooling end at intervals and are electrically connected with the cooling end; and
and the heat insulator is filled between the refrigerating end and the heating end so as to prevent heat transfer between the refrigerating end and the heating end.
2. The semiconductor structure of claim 1, further comprising an electrical connection between the cooling terminal and the heating terminal;
the heat insulator is filled in the self gap of the electric connector; and/or
The insulator is filled in a gap between the electric connector and the refrigerating end; and/or
The heat insulator is filled in a gap between the electric connector and the heating end.
3. The semiconductor structure of claim 2, wherein the electrical connection comprises:
the first connecting part is attached to the surface of the refrigerating end surface facing the heating end;
the second connecting part is attached to the surface of the heating end facing the cooling end; and
the middle connecting part is connected between the first connecting part and the second connecting part and encloses to form a filling gap;
wherein the insulator is filled in the filling gap.
4. The semiconductor structure of claim 3, wherein the first connection portion is in surface contact with the cooling end, and/or the second connection portion is in surface contact with the heating end.
5. The semiconductor structure of claim 4, wherein an orthographic projection of the cooling end on a plane of the first connection is located within the first connection; and/or
The orthographic projection of the heating end on the plane of the second connecting part is located in the second connecting part.
6. The semiconductor structure of claim 3, wherein two ends of the intermediate connection portion are respectively connected to edges of the same side of the first connection portion and the second connection portion.
7. The semiconductor structure of claim 2, wherein the electrical connection is a metal wire, two ends of the metal wire are respectively connected to the cooling end and the heating end, and the thermal insulator is filled in a gap between the metal wire, the cooling end and the heating end.
8. A semiconductor assembly comprising the semiconductor structures of any one of claims 1 to 7, all of the semiconductor structures being connected in series, part of the cooling ends and the heating ends of the semiconductor structures being formed of N-type semiconductors, and the remaining part of the cooling ends and the heating ends of the semiconductor cooling modules being formed of P-type semiconductors.
9. The semiconductor assembly of claim 8, wherein the semiconductor refrigeration module further comprises a conductive gasket for connecting the refrigeration ends of two adjacent semiconductor refrigeration modules and the heating ends of two adjacent semiconductor refrigeration modules.
10. A battery comprising the semiconductor device according to claim 8 or 9.
11. An electrical device comprising a battery as claimed in claim 10 for providing electrical energy.
CN202221037997.4U 2022-04-29 2022-04-29 Semiconductor structure, semiconductor module, battery, and electric device Active CN217606911U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202221037997.4U CN217606911U (en) 2022-04-29 2022-04-29 Semiconductor structure, semiconductor module, battery, and electric device

Publications (1)

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