CN217045951U - Polishing pad with high polishing solution use efficiency - Google Patents
Polishing pad with high polishing solution use efficiency Download PDFInfo
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- CN217045951U CN217045951U CN202122925799.3U CN202122925799U CN217045951U CN 217045951 U CN217045951 U CN 217045951U CN 202122925799 U CN202122925799 U CN 202122925799U CN 217045951 U CN217045951 U CN 217045951U
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- 238000005498 polishing Methods 0.000 title claims abstract description 161
- 239000002002 slurry Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 17
- 230000007547 defect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000007517 polishing process Methods 0.000 abstract description 2
- 238000009795 derivation Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 22
- 238000009826 distribution Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Abstract
The utility model discloses a high polishing solution availability factor's polishing pad, including the polishing layer, set up in the annular groove at polishing layer center, the outside derivation of annular groove has long arc slot, long arc slot with the edge of annular groove is the starting point, is to disperse the form and extends to the edge of polishing layer, and will the polishing layer is cut apart into the long paddle form polishing district of a plurality of groups, adjacent two be provided with multistage gradient's arc slot in the long paddle form polishing district between the long arc slot, multistage gradient arc slot has and is located initial point production in the long paddle form polishing district, and extend to the outward flange of polishing layer. The long paddle-shaped grooves in the polishing layer can realize that polishing liquid can quickly reach a wafer polishing area, the loss in the polishing process of the polishing liquid is effectively reduced, the polishing uniformity inside the wafer can be effectively improved by the grooves with different dense degrees in multiple areas, the defects caused by polishing are reduced, and the higher polishing speed can be kept.
Description
Technical Field
The utility model relates to a chemical mechanical polishing field especially relates to a polishing pad of high polishing solution availability factor.
Background
With the advance of technology, the precision requirements of components inside electronic devices, especially semiconductor wafers, are gradually increased, and during the processing and manufacturing of semiconductor wafers, the surfaces of the wafers are processed by various techniques, such as deposition technique and removal technique, and the surface of the wafer is uneven during the processing, which is not beneficial to the subsequent processing of the semiconductor wafer.
When a semiconductor wafer is polished to make its surface flat, chemical and mechanical methods are generally used for polishing, wherein during the specific polishing operation, the wafer needs to be fixed on a corresponding platen carrier, then the wafer surface is polished by using a polishing pad in a rotating manner, and during the polishing operation, in the gap between the polishing pad and the wafer, the polishing rate and uniformity of the wafer by the polishing pad can be improved by adding polishing liquid, which makes the polishing liquid and the polishing pad cooperate with each other.
In order to improve the matching effect, grooves are required to be arranged on the polishing pad, for example, a bias pulse CMP groove pattern provided by publication No. CN109079649B allows a user to reduce the slurry flow rate compared with the conventional concentric grooves, and the interconnected groove paths allow polishing debris to leave the pad in an effective manner to reduce polishing defects, and the groove pattern improves polishing uniformity, wafer profile, and mold size uniformity and can improve edge effect, but the above patent polishing pad uses grooves with different angles in different regions, and has a complicated structure, which causes the problem that the polishing liquid cannot reach the wafer polishing region quickly, thereby increasing the loss of the polishing liquid, and is not uniform enough when the wafer is polished, so that the polishing rate is reduced.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the defects existing in the prior art and providing a polishing pad with high polishing solution use efficiency.
In order to achieve the above purpose, the utility model adopts the following technical scheme: a polishing pad with high efficiency of use of polishing liquid for polishing a wafer of at least one of magnetic, optical and semiconductor substrates, comprising a polishing layer;
an annular groove disposed in the center of the polishing layer;
a long arc groove is derived from the outside of the annular groove, extends to the edge of the polishing layer in a divergent shape by taking the edge of the annular groove as a starting point, and divides the polishing layer into a plurality of groups of long blade-shaped polishing areas;
the polishing device is characterized in that a long blade-shaped polishing area between two adjacent long arc-shaped grooves is internally provided with multistage gradient arc-shaped grooves, the multistage gradient arc-shaped grooves are provided with outer edges which are positioned in the long blade-shaped polishing area and generate starting points and extend to the polishing layer, first-stage and second-stage … … N-stage arc-shaped grooves are sequentially arranged from the inside to the outer edges of the polishing layer according to the distance between the starting points of the multistage gradient arc-shaped grooves and the circle center of the polishing layer, and the long arc-shaped grooves are defined as primary arc-shaped grooves.
As a further description of the above technical solution: the cross section of the annular groove can be rectangular, semicircular, a combination of the rectangular and the semicircular, trapezoidal and triangular.
As a further description of the above technical solution: the cross sections of the long arc-shaped groove and the multistage gradient arc-shaped groove can be rectangular, semicircular, a combination of the rectangular and the semicircular, trapezoidal and triangular.
As a further description of the above technical solution: the distance range between two adjacent grooves at any position in the long arc-shaped groove and the multistage gradient arc-shaped groove is 1mm-50 mm.
As a further description of the above technical solution: the diameter of the polishing layer is 50-1000mm, and the thickness of the polishing layer is 0.5-5.0 mm.
As a further description of the above technical solution: the radius of the annular groove is 5mm-50mm, preferably 10-25 mm.
As a further description of the above technical solution: referring to the polar coordinates of the coaxial center of the polishing layer, the orbit coordinates of the long arc-shaped groove are (rho, A), and the center O of the long arc-shaped groove is 2 The polar angle of (B) is a polar angle of any point P on the long arc-shaped groove is a, and the curvature radius of the long arc-shaped groove is R, which can be expressed by the following polar coordinate equation:
ρ＝2R cos(B-A)
wherein R is 0.5R pad To 2R pad ，R pad Is the radius of the polishing pad.
The arc of the long arcuate groove track defined by the above equation is between 10 ° and 120 °.
As a further description of the above technical solution: the multi-stage gradient arc-shaped groove has the track coordinates of (rho ', a '), and according to the fact that the polar angle of the center O ' of the multi-stage gradient arc-shaped groove is B ', the polar angle of any point P ' on the multi-stage gradient arc-shaped groove is a ', the curvature radius of the multi-stage gradient arc-shaped groove is R ', and the multi-stage gradient arc-shaped groove can be expressed by the following polar coordinate equation:
ρ′＝2R′cos(B′-A′)
wherein, R' is 0.5R pad To 2R pad ，R pad Is the radius of the polishing pad.
The arc of the multi-step gradient arc groove track defined by the equation is between 10 ° and 120 °.
As a further description of the above technical solution: the number of the long arc-shaped grooves is less than or equal to that of the multi-gradient arc-shaped grooves.
As a further description of the above technical solution: and the distance difference delta L between the two multistage gradient arc-shaped grooves adjacent to different starting points and the center of the polishing layer is 0.01Rpad-0.5Rpad, and the linear distance delta P between the grooves is 1mm-50 mm.
As a further description of the above technical solution: the depth range of the long arc-shaped groove and the multistage gradient arc-shaped groove is 0.4mm-1.0 mm.
The utility model discloses following beneficial effect has:
1. the utility model discloses a long paddle form slot of design, by interior circle slot and multistage gradient arc slot, form polishing layer central zone circular arc slot density sparse relatively and spread the intensive distribution state of peripheral zone circular arc slot high speed path. The grooves can realize that the polishing solution can quickly reach a wafer polishing area, the loss in the polishing process of the polishing solution is effectively reduced, the grooves with different densities in multiple areas can effectively improve the polishing uniformity inside the wafer, and the higher polishing speed can be kept.
Drawings
FIG. 1 is a schematic view of a polishing pad with high efficiency of using polishing solution according to the present invention;
FIG. 2 is a schematic diagram showing the shape and position of an arc-shaped groove of a polishing pad with high polishing solution utilization efficiency according to the present invention;
FIG. 3 is a schematic diagram of a multi-level gradient arc-shaped groove of a polishing pad with high efficiency of using polishing solution.
Illustration of the drawings:
1. a polishing layer; 2. an annular groove; 3. a long arc-shaped groove; 4. multistage gradient arc-shaped groove.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance, and furthermore, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood as a specific case by those skilled in the art.
Referring to fig. 1-3, the present invention provides an embodiment: a polishing pad with high efficiency of use of polishing liquid for polishing a wafer of at least one of magnetic, optical and semiconductor substrates, comprising a polishing layer 1;
an annular groove 2 arranged in the center of the polishing layer 1;
a long arc groove 3 is derived outside the annular groove 2, the long arc groove 3 takes the edge of the annular groove 2 as a starting point, extends to the edge of the polishing layer 1 in a divergent shape, and divides the polishing layer 1 into a plurality of groups of long blade-shaped polishing areas;
the polishing layer comprises a long blade-shaped polishing area and a plurality of long blade-shaped grooves 3, wherein the long blade-shaped polishing area between every two adjacent long arc-shaped grooves 3 is internally provided with a plurality of stages of gradient arc-shaped grooves, the multistage gradient arc-shaped grooves 4 are provided with starting points positioned in the long blade-shaped polishing area and extend to the outer edge of the polishing layer 1, according to the distance between the starting points of the multistage gradient arc-shaped grooves 4 and the circle center of the polishing layer 1, a first stage arc-shaped groove and a second stage … … N-stage arc-shaped groove are sequentially arranged from the inside to the outer edge of the polishing layer 1, and the long arc-shaped grooves 3 are defined as primary arc-shaped grooves.
According to the technical scheme, the annular groove 2, the long arc-shaped groove 3 and the multi-level gradient arc-shaped grooves 4 jointly form the long paddle-shaped groove on the polishing layer, the density of the arc-shaped grooves in the central area of the polishing layer 1 is relatively sparse, and the density of the arc-shaped grooves in the peripheral area of the polishing layer 1 is relatively dense, when the polishing pad is used, polishing liquid diffuses outwards from the annular groove 2 along the arc-shaped grooves, because the distribution density of the arc-shaped grooves outside the polishing layer 1 is greater than that of the central area, the diffusion speed of the polishing liquid outwards in the dense area is higher, so that the polishing area of a wafer can be rapidly reached, and because the arc-shaped grooves distributed on the periphery of the polishing layer 1 are denser, when the polishing liquid passes through the dense area, the polishing liquid passing through each arc-shaped groove is more uniform due to the increase of the number of the arc-shaped grooves, the loss of the polishing solution caused by the centrifugal action and the outward throwing of the polishing solution is reduced, the wafer is polished more uniformly, and meanwhile, a higher polishing rate can be kept.
Furthermore, the cross section of the annular groove 2 can be rectangular, semicircular, a combination of rectangular and semicircular, trapezoidal and triangular.
Furthermore, the cross sections of the long arc-shaped groove 3 and the multistage gradient arc-shaped groove 4 can be rectangular, semicircular, a combination of rectangular and semicircular, trapezoidal and triangular.
Furthermore, the distance between two adjacent grooves at any position in the long arc-shaped groove 3 and the multistage gradient arc-shaped groove 4 ranges from 1mm to 50 mm.
Furthermore, the diameter of the polishing layer 1 is 50-1000mm, and the thickness of the polishing layer 1 is 0.5-5.0 mm.
Further, the radius of the annular groove 2 is 5mm-50 mm.
Further, the position of the polishing layer is defined by polar coordinates from any point to the center O 1 Is r, has a polar angle theta, and is represented by (r, theta), as shown in fig. 2, with reference to the polar coordinates of the coaxial center of the polishing layer 1, the orbital coordinates (ρ, a) of the long arc groove 3, and the center O of the long arc groove 3 2 Has a polar angle of B, and a long arc-shaped grooveThe polar angle of any point P on the groove 3 is a, and the curvature radius of the long arc-shaped groove 3 is R, which can be expressed by the following polar coordinate equation:
ρ＝2R cos(B-A)
O 2 may be with O 1 Any point away from R, wherein R is 0.5R pad To 2R pad ，R pad Is the radius of the polishing pad.
The arc of the long arc groove 3 track defined by the above equation is between 10 ° and 120 °, preferably the arc of the long arc groove 3 track is between 20 ° and 90 °.
Further, as shown in FIG. 3, the polishing layer has a plurality of arc grooves with different starting points and different radians, and the distance between the starting point and the center of the arc groove is L (L can range from 0 to R) pad ) Adding a branch between every two arc-shaped grooves, wherein the way of adding the branch is not limited to the way of adding every two arc-shaped grooves, and comprises all the adding ways of increasing the number of the arc-shaped grooves in the same radius range, so that the groove distance inside and outside the polishing layer is close, the track coordinates of the multi-stage gradient arc-shaped groove 4 are (rho ', A '), the polar angle according to the O ' of the center of circle of the multi-stage gradient arc-shaped groove 4 is B, the polar angle of any point P on the multi-stage gradient arc-shaped groove 4 is A, the curvature radius of the multi-stage gradient arc-shaped groove 4 is R, and the following polar coordinate equation can be used for expressing:
ρ′＝2R′cos(B′-A′)
wherein, R' is 0.5R pad To 2R pad ，R pad Is the radius of the polishing pad.
The arc of the multi-step gradient arc groove 4 track defined by the equation is between 10 ° and 120 °.
Further, the number of the long arc-shaped grooves 3 is less than or equal to the number of the multi-gradient arc-shaped grooves 4.
Furthermore, the range of the distance difference Delta L between the two multi-stage gradient arc-shaped grooves 4 adjacent to different starting points and the center of the polishing layer 1 is 0.01R pad -0.5R pad The linear distance delta P of the grooves ranges from 1mm to 50 mm.
According to the technical scheme, the long arc-shaped grooves and the multistage gradient arc-shaped grooves are arranged in a mode that the long arc-shaped grooves and the multistage gradient arc-shaped grooves are diffused from inside to outside on the polishing layer, and meanwhile, the distance between every two adjacent grooves is close, so that the polishing liquid is more uniformly distributed on the polishing pad, and the wafer is more uniformly polished.
Furthermore, the depth range of the long arc-shaped groove 3 and the multistage gradient arc-shaped groove 4 is 0.4mm-1.0 mm.
The working principle is as follows: when the device is used, the annular groove 2, the long arc-shaped groove 3 and the multi-level gradient arc-shaped grooves 4 jointly form a long paddle-shaped groove on the polishing layer 1, the density of the arc-shaped grooves in the central area of the polishing layer 1 is relatively sparse, the density of the arc-shaped grooves in the peripheral area of the polishing layer 1 is relatively dense, when the polishing pad is used, polishing liquid diffuses outwards from the annular groove 2 along the arc-shaped grooves, because the distribution density of the arc-shaped grooves outside the polishing layer 1 is greater than that of the central area, the diffusion speed of the polishing liquid outwards in the dense area is higher, so that a wafer polishing area can be reached more quickly, and because the arc-shaped grooves distributed on the periphery of the polishing layer 1 are denser, when the polishing liquid passes through the dense area, the polishing liquid passing through each arc-shaped groove is more uniform due to the increase of the number of the arc-shaped grooves, the loss of the polishing solution caused by the centrifugal action and the outward throwing of the polishing solution is reduced, the wafer is polished more uniformly, and meanwhile, a higher polishing rate can be kept.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions on some technical features, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (10)
1. A polishing pad having high slurry use efficiency for polishing a wafer of at least one of magnetic, optical and semiconductor substrates, comprising: comprises a polishing layer;
(1) the annular groove is arranged in the center of the polishing layer;
(2) a long arc groove is derived from the outside of the annular groove, extends to the edge of the polishing layer in a divergent shape by taking the edge of the annular groove as a starting point, and divides the polishing layer into a plurality of groups of long blade-shaped polishing areas;
(3) the polishing device is characterized in that a long blade-shaped polishing area between two adjacent long arc-shaped grooves is internally provided with multistage gradient arc-shaped grooves, the multistage gradient arc-shaped grooves are provided with outer edges which are positioned in the long blade-shaped polishing area and generate starting points and extend to the polishing layer, first-stage and second-stage … … N-stage arc-shaped grooves are sequentially arranged from the inside to the outer edges of the polishing layer according to the distance between the starting points of the multistage gradient arc-shaped grooves and the circle center of the polishing layer, and the long arc-shaped grooves are defined as primary arc-shaped grooves.
2. The polishing pad having high slurry use efficiency according to claim 1, wherein: the cross section of the annular groove can be rectangular, semicircular, a combination of the rectangular and the semicircular, trapezoidal or triangular.
3. The polishing pad having high slurry use efficiency according to claim 1, wherein: the cross sections of the long arc-shaped groove and the multistage gradient arc-shaped groove can be rectangular, semicircular, a combination of rectangular and semicircular, trapezoidal or triangular.
4. A polishing pad having high slurry use efficiency according to claim 1, wherein: the distance between two adjacent grooves at any position in the long arc-shaped groove and the multistage gradient arc-shaped groove ranges from 1mm to 50 mm.
5. A polishing pad having high slurry use efficiency according to claim 1, wherein: the diameter of the polishing layer is 50-1000mm, and the thickness of the polishing layer is 0.5-5.0 mm.
6. The polishing pad having high slurry use efficiency according to claim 1, wherein: the radius of the annular groove is 5-50 mm.
7. A polishing pad having high slurry use efficiency according to claim 1, wherein: referring to the polar coordinates of the coaxial center of the polishing pad, the orbit coordinates of the long arc-shaped groove are (rho, A), and the center O of the long arc-shaped groove is 2 The polar angle of (B) is a polar angle of any point P on the long arc-shaped groove is a, and the curvature radius of the long arc-shaped groove is R, which can be expressed by the following polar coordinate equation:
ρ＝2Rcos(B-A)
wherein R is 0.5R pad To 2R pad ，R pad Is the radius of the polishing pad and,
the arc of the long arcuate groove track defined by the above equation is between 10 ° and 120 °.
8. The polishing pad having high slurry use efficiency according to claim 1, wherein: the multi-stage gradient arc-shaped groove has the track coordinates of (rho ', a '), and according to the fact that the polar angle of the center O ' of the multi-stage gradient arc-shaped groove is B ', the polar angle of any point P ' on the multi-stage gradient arc-shaped groove is a ', the curvature radius of the multi-stage gradient arc-shaped groove is R ', and the multi-stage gradient arc-shaped groove can be expressed by the following polar coordinate equation:
ρ′＝2R′cos(B′-A′)
wherein, R' is 0.5R pad To 2R pad ，R pad Is the radius of the polishing pad and,
the arc of the multi-step gradient arc groove track defined by the equation is between 10 ° and 120 °.
9. A polishing pad having high slurry use efficiency according to claim 8, wherein: the number of the long arc-shaped grooves is less than or equal to that of the multistage gradient arc-shaped grooves.
10. The polishing pad having high slurry use efficiency according to claim 8, wherein: the range of the distance difference Delta L between the starting point of the two adjacent stages of the multistage gradient arc-shaped grooves and the circle center of the polishing layer is 0.01R pad -0.5R pad 。
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122925799.3U CN217045951U (en) | 2021-11-24 | 2021-11-24 | Polishing pad with high polishing solution use efficiency |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122925799.3U CN217045951U (en) | 2021-11-24 | 2021-11-24 | Polishing pad with high polishing solution use efficiency |
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| CN217045951U true CN217045951U (en) | 2022-07-26 |
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| CN202122925799.3U Active CN217045951U (en) | 2021-11-24 | 2021-11-24 | Polishing pad with high polishing solution use efficiency |
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