CN213999050U - Chemical mechanical polishing pad for wafer - Google Patents
Chemical mechanical polishing pad for wafer Download PDFInfo
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- CN213999050U CN213999050U CN202022751351.XU CN202022751351U CN213999050U CN 213999050 U CN213999050 U CN 213999050U CN 202022751351 U CN202022751351 U CN 202022751351U CN 213999050 U CN213999050 U CN 213999050U
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- 238000005498 polishing Methods 0.000 title claims abstract description 97
- 239000000126 substance Substances 0.000 title claims abstract description 41
- 239000002002 slurry Substances 0.000 claims abstract description 46
- 238000005452 bending Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 50
- 238000005520 cutting process Methods 0.000 claims description 10
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 15
- 239000012530 fluid Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 55
- 238000000034 method Methods 0.000 description 29
- 239000007788 liquid Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 17
- 238000013461 design Methods 0.000 description 12
- 238000012545 processing Methods 0.000 description 11
- 239000002699 waste material Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 229920000297 Rayon Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The utility model provides a chemical mechanical polishing pad that wafer was used contains: the base layer is disc-shaped and provided with a circle center, and at least three slurry holes are formed in the base layer; the grinding layer is correspondingly arranged on one side of the substrate layer and is provided with a plurality of concentric circular grooves and a plurality of radial bent line grooves; wherein, part of the bending line grooves take the circle center as an end point and are respectively connected with the slurry holes into a line, and further extend to the outermost side of the grinding layer, so that the concentric circles are cut into a plurality of arc sections; and part of the bent line grooves further extend to the outermost side of the grinding layer by taking the middle position of the arc section as an end point, and further extend to the outermost side of the grinding layer by taking the middle position of the repeatedly cut arc section as an end point. Therefore, the grinding fluid can be effectively guided and uniformly distributed to achieve better grinding effect.
Description
Technical Field
The present invention relates to the field of chemical mechanical polishing pads, and more particularly to a chemical mechanical polishing pad for a wafer, which can uniformly guide slurry and disperse the slurry to achieve a better polishing effect and can be recycled for the used slurry.
Background
Chemical Mechanical Polishing (Chemical Mechanical Polishing) is the most widely used method for wafer planarization. As the name suggests, the process principle mainly utilizes the mechanical principle of polishing, and combines with the chemical agent for polishing, so as to further flatten the wafer surface and meet the electrical requirements of the end product by further pressing the polishing wheel to the wafer, wherein the wafer surface has a high and low profile caused by the process of growing the wafer, for example, the requirement of back polishing after the front surface is metalized in the semiconductor process. Briefly, the objective of chemical mechanical polishing is to polish the surface of the completed integrated circuit so that the next layer of metal wires has better growth yield.
Conventionally, a chemical mechanical polishing apparatus generally comprises a high-speed rotating base with a polishing pad, a wafer carrier for holding the wafer, a wafer pressing pad from top to bottom, a polishing slurry nozzle on one side for spraying polishing slurry onto the polishing pad, and a rotating, pressing and spraying process for a predetermined thickness of the wafer. Therefore, the efficiency of CMP is affected by various equipment conditions. Any difference in the settings of any of these conditions may result in wafer breakage and thus affect yield performance. Therefore, in order to avoid the damage of the wafer which is partially metallized due to the poor process parameters, the requirement of recycling the used wafer is derived, and the recycled wafer after grinding is used as the test piece.
For a polishing pad, the design of the grooves on the polishing pad will directly or indirectly affect the subsequent polishing effect. Therefore, a good trench design will help to improve the planarization efficiency, such as the following common effects: the wafer and the grinding fluid can be in a better mechanical removal and chemical reaction environment; providing a grinding fluid to be uniformly distributed on the grinding pad, so that the grinding fluid between the wafer and the grinding pad is uniformly distributed; providing a material for removing the residue of the planarization process and the heat energy generated thereby; the vacuum breaking pipeline is provided, so that the problem that the wafer is difficult to remove or deform because the center of the wafer is in a negative pressure state due to hydraulic pressure on the grinding pad without the groove is avoided. Simultaneously, the size and configuration of the grooves also affect the nano-scale morphology change of the surface of the silicon wafer during planarization, and as the size of the grooves increases, more polishing slurry is added to the reaction, so that the local removal rate can be improved, but as the working area decreases, the overall removal rate decreases. Most of the conventional trench processes employ a single polishing pad structure for the planing process, which often causes different trench depths, resulting in different local removal rates for the same polishing pad, and further affecting the overall planarization efficiency. Therefore, in view of the above, the design of the trench will be directly related to the slurry and indirectly or directly affect the planarization performance.
In view of the above, in order to achieve better polishing efficacy, the present inventors have diligently studied and made use of accumulated experience of the industry for many years, and further provided a chemical mechanical polishing pad for a wafer, which can effectively control the trench removal depth to maintain uniformity by using a two-layer polishing pad structure, and avoid poor wafer thinning uniformity due to different removal rates caused by trench depth differences in a local portion of the wafer. Furthermore, the utility model discloses slot design aspect can make lapping liquid evenly distributed and obtain the planarization effect of preferred, utilizes simultaneously the slot design can effectively discharge the lapping liquid to remove the processing procedure waste material and grind heat energy in step, and utilize the utility model discloses a grinding pad can make the exhaust lapping liquid cyclic utilization after grinding, reduces the processing procedure cost by a wide margin.
SUMMERY OF THE UTILITY MODEL
The present invention is directed to a chemical mechanical polishing pad for polishing a wafer, which can effectively improve the polishing quality and reduce the process cost. To achieve the above object, the present invention provides a chemical mechanical polishing pad for a wafer, comprising: the base layer is disc-shaped and provided with a circle center, and at least three slurry holes are formed in the base layer; the grinding layer is correspondingly arranged on one side of the substrate layer and is provided with a plurality of concentric circular grooves and a plurality of radial bending line grooves, and the bending line grooves are bent in the same clockwise or anticlockwise direction; the slurry holes are distributed on the concentric circular grooves at the innermost circle at equal intervals; the bending line groove is composed of a main groove group and a plurality of secondary groove groups, the bending line groove in the main groove group takes the circle center as an end point and is respectively connected with the slurry hole into a line, the bending line groove further extends to the outermost side of the grinding layer, and the concentric circles are cut into a plurality of arc sections; and the bent wire grooves in the secondary groove group further extend to the outermost side of the grinding layer by taking the middle position of the arc section as an end point, and further extend to the outermost side of the grinding layer by taking the middle position of the arc section after repeated cutting as an end point. Therefore, can make the effective water conservancy diversion of lapping liquid and evenly distributed in order to reach the grinding efficiency of preferred, utilize simultaneously the slot design can effectively discharge the lapping liquid to remove the processing procedure waste material and grind heat energy in step, again utilize the utility model discloses a grinding pad can make the exhaust lapping liquid cyclic utilization after the grinding, reduces the processing procedure cost by a wide margin.
Preferably, in order to promote uniform distribution of the slurry, the concentric grooves are equally spaced, so that the slurry can be guided and radiated to each region of the polishing pad.
Preferably, in order to make the slurry flow in from the middle position of the polishing pad uniformly, the number of the slurry holes may be symmetrically four.
Preferably, the number of the concentric circular grooves is three rings to achieve a better slurry uniform distribution and flow guiding effect due to the adaptation to the current wafer size.
Preferably, in order to quickly combine or replace the polishing pad, the other side of the base layer, which is not provided with the polishing layer, is provided with an adhesive layer, so as to facilitate the operation and maintenance of the equipment.
Preferably, in order to easily implement the process of the polishing pad device, the concentric circular grooves and the curved line grooves of the polishing layer are formed by a cutting process.
To sum up, the utility model discloses a chemical mechanical polishing pad that wafer was used utilizes two laminar polishing pad structures, can be with digging out the degree of depth effective control of slot and maintain the uniformity, avoids the wafer part to cause different removal rates because of the slot depth difference, and it is relatively poor to lead to wafer thinization degree of consistency. Furthermore, the utility model discloses slot design aspect can make lapping liquid evenly distributed and obtain the planarization effect of preferred, utilizes simultaneously the slot is open design in the grinding pad edge and can effectively discharge the lapping liquid, so can remove the processing procedure waste material and grind heat energy in step, avoids the grinding pad material to influence the grinding effect because of the thermal deterioration. Utilize simultaneously the utility model discloses a polishing pad can make the discharged lapping liquid cyclic utilization after the grinding, more can reduce the processing procedure cost by a wide margin.
Drawings
Fig. 1 is a schematic perspective view of a cmp pad according to a preferred embodiment of the present invention with three slurry holes.
Fig. 2 is a schematic perspective view of a cmp pad according to a preferred embodiment of the present invention with four slurry holes.
FIG. 3 is a side view of a chemical mechanical polishing pad according to a preferred embodiment of the present invention.
FIG. 4 is a schematic view of a chemical mechanical polishing pad according to a preferred embodiment of the present invention.
In the figure:
1 chemical mechanical polishing pad
10 base layer
102 slurry hole
11 arc segment
12 polishing layer
121 concentric circular groove
122 curved wire grooves
122A main groove group
122B sub-groove group
14 adhesive layer
2 base
3 wafers.
Detailed Description
For clear understanding of the present invention, please refer to the following description with accompanying drawings.
Please refer to fig. 1 to 3, which are a schematic perspective view of a cmp pad with three slurry holes, a schematic perspective view of a cmp pad with four slurry holes, and a side view of a cmp pad according to a preferred embodiment of the present invention. The utility model provides a chemical mechanical polishing pad 1 for wafer, which comprises a basal layer 10 and a polishing layer 12. The base layer 10 is a disc shape having a center, and the base layer 10 is provided with at least three slurry holes 102. The polishing layer 11 is correspondingly disposed on one side of the substrate layer 10, the polishing layer 12 has a plurality of concentric circular grooves 121 and a plurality of radial bending grooves 122, and the bending grooves 122 are all bent in the same clockwise or counterclockwise direction. The slurry holes 102 are distributed at equal intervals on the positions of the concentric circular grooves 121 on the innermost circle, the bending line groove 122 is composed of a main groove group 122A and a plurality of secondary groove groups 122B, the bending line groove 122 in the main groove group 122A takes the circle center as an end point and is respectively connected with the slurry holes 102 to form a line, and the bending line groove further extends to the outermost side of the grinding layer 12, so that the concentric circular grooves 121 are cut into a plurality of arc sections 11. The curved line grooves 122 in the secondary groove group 122B extend from the middle position of the arc segment 11 as an end point to the outermost side of the polishing layer 12 to cut a part of the arc segment 11 again, and extend from the middle position of the repeatedly cut arc segment 11 as an end point to the outermost side of the polishing layer 12. Accordingly, the two-layer structure of the substrate layer 10 and the polishing layer 12 can keep the excavation depths of the concentric circular grooves 121 and the bending line grooves 122 consistent, thereby avoiding the reduction of the thinning flatness of the wafer due to the difference of the local removal rates of the wafer polishing caused by the different groove depths when the wafer is polished. And simultaneously, through the utility model discloses a special slot design lets the lapping liquid pass through can evenly distributed and promote the grinding planarization degree of wafer after thick liquids hole 102 pours into, moreover, crooked line slot 122 sets up with this kind of attitude, makes the edge of chemical mechanical polishing pad 1 is open structure, and possesses effective discharge lapping liquid, removes the efficiency of grinding waste material and heat energy in step. In the wafer grinding process, through crooked line slot 122 can let the lapping liquid discharge will grind the waste material simultaneously and take away from in the lump to the heat energy that produces when grinding, the chemical mechanical polishing pad 1 also has splendid effect of getting rid of, reduces the probability that chemical mechanical polishing pad 1 is heated rotten damage effectively increase of service life and keeps grinding effect. In addition, the chemical mechanical polishing pad 1 can recycle the polishing solution discharged after polishing, thereby greatly reducing the cost required by the process.
Fig. 1 is a schematic view of the structure of the chemical mechanical polishing pad 1 in which the base layer 10 is provided with three slurry holes 102, and the polishing layer 12 has two circles of the concentric circular grooves 121, where the slurry holes 102 are distributed in the innermost circle of the concentric circular grooves 121 at equal intervals, so that the polishing slurry can uniformly flow to the curved linear grooves 122, and the curved linear grooves 122 are arranged in the above manner to effectively guide the polishing slurry. Here, the main groove group 122A has three curved line grooves 122, and one of the sub groove groups 122B has three curved line grooves 122, and the curved line grooves 122 extend from the middle position of the arc segment 11 formed by cutting the concentric circular groove 121 on the innermost circumference to the outermost side of the abrasive layer 12 and cut a part of the arc segment 11 again; another one of the sub-groove groups 122B has six bending grooves 122, and the bending grooves 122 extend from the middle of the arc segment 11 formed by cutting the concentric grooves 121 of the second circle to the outermost side of the polishing layer 12. Preferably, the concentric grooves 121 are distributed at equal intervals to achieve an excellent guiding effect of guiding and radiating the polishing slurry to each region of the chemical mechanical polishing pad 1, so that the polishing slurry can have excellent distribution uniformity on the chemical mechanical polishing pad 1, thereby effectively improving the polishing performance.
As shown in fig. 2, four slurry holes 102 may be symmetrically formed to allow the slurry to uniformly flow from the middle of the cmp pad 1. On the other hand, the number of the concentric grooves 121 may be three according to the size of the current wafer, so as to have a better flow guiding effect of uniformly distributing the polishing slurry. As shown, it can be seen that at the concentric circular groove 121 at the innermost circle, there are four slurry holes 102 correspondingly, and the slurry holes 102 are distributed at equal intervals. More specifically, the main groove group 122A includes four bending line grooves 122, and the bending line grooves 122 are respectively connected to the slurry holes 102 at the center of the base layer 10 and extend to the outermost side of the polishing layer 12, so as to cut the concentric grooves 121 to form the arc segments 11. One of the secondary groove groups 122B has four curved grooves 122, and the curved grooves 122 extend from the middle of the arc segment 11 formed by cutting the concentric groove 121 on the innermost circle to the outermost side of the abrasive layer 12 and cut part of the arc segment 11 again. One of the secondary groove groups 122B has eight bending grooves 122, and the bending grooves 122 extend from the middle of the arc segment 11 formed by cutting the bending grooves 122 in the concentric circular groove 121 of the second circle to the outermost side of the abrasive layer 12 to cut part of the arc segment 11 again. One of the secondary groove groups 122B has sixteen bending grooves 122, and the aforementioned bending grooves 122 extend from the middle position of the arc segment 11 formed by cutting the bending grooves 122 from the concentric grooves 121 of the third circle to the outermost side of the abrasive layer 12, as shown in fig. 2. Similarly, in the structure of four slurry holes 102 and three concentric grooves 121, the concentric grooves 121 may be equally spaced to achieve the effect of uniformly guiding the slurry.
Further, in order to improve the speed and convenience of replacing the chemical mechanical polishing pad 1, the other side of the base layer 10 not provided with the polishing layer 12 is provided with an adhesive layer 14, so that the chemical mechanical polishing pad 1 is installed in the polishing apparatus and the operation and maintenance of the apparatus are facilitated, as shown in fig. 3.
In addition, in order to simplify the manufacturing process of the concentric circular grooves 121 and the curved line grooves 122 and improve the precision of the manufacturing process, the concentric circular grooves 121 and the curved line grooves 122 of the polishing layer 12 may be formed by a cutter cutting process, so as to rapidly and precisely form the concentric circular grooves 121 and the curved line grooves 122 on the cmp pad 1.
In application, please refer to fig. 4, which is a schematic diagram of a chemical mechanical polishing pad. The utility model discloses a preferred embodiment is for making chemical mechanical polishing pad 1 sets up in wafer 3 top, and by upwards pressurizing to wafer 3 in order to carry out the grinding process down, chemical mechanical polishing pad 1 accessible viscose layer 14 and the mutual group of base 2 establish to the correspondence sets up in wafer 3 top, certainly during the grinding slurry hole 13 pours into the lapping liquid into, and the lapping liquid receives special design crooked line slot 122 reaches the guidance of concentric circle slot 121, and can distribute evenly in chemical mechanical polishing pad 1 can carry out the thinization from wafer 3 top and grind the operation. Certainly, the utility model discloses an use and to make wafer 3 correspond to be located the top of chemical mechanical polishing pad 1 makes wafer 3 from top to bottom move towards chemical mechanical polishing pad 1 removes and receives the efficiency that chemical mechanical polishing pad 1 ground reaches the thinization. The waste materials generated during the polishing process can be effectively guided and discharged in response to the polishing slurry through the concentric circular grooves 121 and the curved linear grooves 122, and meanwhile, the heat energy generated during the polishing process can be removed accordingly, thereby effectively eliminating the deterioration influence of the temperature on the chemical mechanical polishing pad 1, prolonging the overall service life and maintaining the polishing performance. The polishing slurry discharged during the polishing process can be recycled, thereby reducing the material cost required by the polishing process. Furthermore, the above-mentioned about the utility model discloses can correspond the wafer kind of grinding, except can be to general wafer product, do to retrieve the regenerated ground wafer and grind the process to through the aforesaid the utility model discloses a slim wafer that has ground, the utility model discloses an excellent grinding efficiency who is unlikely broken piece when possessing and grinding the regenerated wafer.
To sum up, the utility model discloses a chemical mechanical polishing pad that wafer was used utilizes two laminar polishing pad structures, can be with digging out the degree of depth effective control of slot and maintain the uniformity, avoids the wafer part to cause different removal rates because of the slot depth difference, and it is relatively poor to lead to wafer thinization degree of consistency. Furthermore, the utility model discloses slot design aspect can make lapping liquid evenly distributed and obtain the planarization effect of preferred, utilizes simultaneously the slot is open design in the grinding pad edge and can effectively discharge the lapping liquid, so can remove the processing procedure waste material and grind heat energy in step, avoids the grinding pad material to influence the grinding effect because of the thermal deterioration. Utilize simultaneously the utility model discloses a polishing pad can make the discharged lapping liquid cyclic utilization after the grinding, more can reduce the processing procedure cost by a wide margin. In addition, the utility model discloses a grinding pad except can be applied to the wafer grinding process in the general semiconductor component processing procedure, retrieves again because of having passed the processing procedure process to the wafer for regeneration, so show more and grind thinner structure in back, and utilize the utility model discloses a grinding pad above-mentioned each item advantage also can not produce the fragmentation and can maintain the preferred degree of consistency, consequently the utility model discloses it grinds the processing procedure to do the application to regeneration wafer.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; therefore, the utility model discloses a change, modification or replacement the subassembly of the same function that do not deviate from under the impartial scope, for example change the grinding pad material of different materials, slot width or the change of degree of depth size, set for different grinding rotational speeds, select for use different lapping liquid thick liquids, grind to semiconductor wafer or regeneration wafer behind the metallization process etc. still all should cover in the patent scope of the utility model.
Claims (6)
1. A chemical mechanical polishing pad for a wafer, comprising:
the base layer is disc-shaped and provided with a circle center, and at least three slurry holes are formed in the base layer; and
the grinding layer is correspondingly arranged on one side of the substrate layer and is provided with a plurality of concentric circular grooves and a plurality of radial bending line grooves, and the bending line grooves are bent in the same clockwise or anticlockwise direction;
the slurry holes are distributed on the concentric circular grooves at the innermost circle at equal intervals; the bending line groove is composed of a main groove group and a plurality of secondary groove groups, the bending line groove in the main groove group takes the circle center as an end point and is respectively connected with the slurry hole into a line, the bending line groove further extends to the outermost side of the grinding layer, and the concentric groove is cut into a plurality of arc sections; and the bent wire grooves in the secondary groove group further extend to the outermost side of the grinding layer by taking the middle position of the arc section as an end point, and further extend to the outermost side of the grinding layer by taking the middle position of the arc section after repeated cutting as an end point.
2. The chemical mechanical polishing pad for wafer as claimed in claim 1, wherein the concentric grooves are equally spaced.
3. The chemical mechanical polishing pad for wafer as claimed in claim 2, wherein the number of slurry holes is four.
4. The chemical mechanical polishing pad for wafer as claimed in claim 3, wherein the number of the concentric grooves is three.
5. The chemical mechanical polishing pad for wafer as claimed in claim 4, wherein the substrate layer is provided with an adhesive layer on the other side thereof not provided with the polishing layer.
6. The chemical mechanical polishing pad for wafer as claimed in claim 5, wherein the concentric circular grooves and the curved linear grooves of the polishing layer are formed by a cutter cutting process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022751351.XU CN213999050U (en) | 2020-11-25 | 2020-11-25 | Chemical mechanical polishing pad for wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022751351.XU CN213999050U (en) | 2020-11-25 | 2020-11-25 | Chemical mechanical polishing pad for wafer |
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| Publication Number | Publication Date |
|---|---|
| CN213999050U true CN213999050U (en) | 2021-08-20 |
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| CN202022751351.XU Active CN213999050U (en) | 2020-11-25 | 2020-11-25 | Chemical mechanical polishing pad for wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117798814A (en) * | 2024-03-01 | 2024-04-02 | 浙江大学杭州国际科创中心 | Polishing pad, preparation method of polishing pad and polishing method |
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2020
- 2020-11-25 CN CN202022751351.XU patent/CN213999050U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117798814A (en) * | 2024-03-01 | 2024-04-02 | 浙江大学杭州国际科创中心 | Polishing pad, preparation method of polishing pad and polishing method |
| CN117798814B (en) * | 2024-03-01 | 2024-05-28 | 浙江大学杭州国际科创中心 | Polishing pad, preparation method of polishing pad and polishing method |
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