CN214625008U - Wafer Carrier Structure and Tray - Google Patents
Wafer Carrier Structure and Tray Download PDFInfo
- Publication number
- CN214625008U CN214625008U CN202120727267.6U CN202120727267U CN214625008U CN 214625008 U CN214625008 U CN 214625008U CN 202120727267 U CN202120727267 U CN 202120727267U CN 214625008 U CN214625008 U CN 214625008U
- Authority
- CN
- China
- Prior art keywords
- wafer
- adhesive layer
- layer
- support member
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本实用新型涉及半导体设备技术领域，公开了一种晶片承载结构和料盘。晶片承载结构包括：粘接层和承载层，所述粘接层成型于所述承载层上，所述粘接层用于粘接晶片，所述承载层的延伸率的取值范围为0％至5％。利用本实用新型实施例提供的晶片承载结构，通过粘接层对晶片进行粘接，在转移晶片承载结构时，晶片承载结构上的晶片不容易发生位移，且在后续将目标晶片从晶片承载结构上剥离时，可以仅针对目标晶片进行剥离，而不会影响到其他不需要剥离的晶片。
The utility model relates to the technical field of semiconductor equipment, and discloses a wafer carrying structure and a material tray. The wafer carrier structure includes: an adhesive layer and a carrier layer, the adhesive layer is formed on the carrier layer, the adhesive layer is used for bonding the wafer, and the range of the elongation of the carrier layer is 0% to 5%. Using the wafer carrying structure provided by the embodiment of the present invention, the wafers are bonded through the adhesive layer. When the wafer carrying structure is transferred, the wafers on the wafer carrying structure are not easily displaced, and the target wafer is subsequently removed from the wafer carrying structure. When peeling up, only the target wafer can be peeled off without affecting other wafers that do not need to be peeled off.
Description
Technical Field
The utility model relates to a semiconductor equipment technical field especially relates to a wafer bearing structure and charging tray.
Background
Die bonding is a process of bonding a wafer to a designated area of a support through a glue (for an LED, the glue is generally a conductive glue or an insulating glue), forming a thermal or electrical path, and providing conditions for subsequent wire bonding.
In the die bonding process, the outer periphery of the wafer bearing structure which is adhered with a plurality of wafers is fixed through the primary ring and the secondary ring, so that a material tray is formed, and then the material tray is placed into the bin for die bonding operation. The wafer carrying structure in the prior art is generally made of a blue film, that is, made of sapphire.
However, since the blue film has a certain ductility, in the process of transferring the wafers from one tray to another tray, the blue film on which the wafers are adhered is stretched to deform, which causes displacement among the wafers, and further changes the arrangement positions among the wafers, thereby affecting the performance of the wafers.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem that the wafer bearing structure among the correlation technique takes place deformation easily and leads to taking place the displacement between a plurality of wafers, the utility model provides a wafer bearing structure and charging tray.
In a first aspect, the present invention provides a wafer carrying structure, including: the wafer bonding device comprises a bonding layer and a bearing layer, wherein the bonding layer is formed on the bearing layer and used for bonding wafers, and the elongation of the bearing layer ranges from 0% to 5%.
Optionally, the carrier layer comprises a PET film.
Optionally, the light transmittance of the carrier layer ranges from 96% to 100%, and the light transmittance of the adhesive layer ranges from 75% to 100%.
Optionally, the bonding layer comprises an ultraviolet light viscosity-reducing agent.
Optionally, the viscosity of the ultraviolet light viscosity reducer ranges from 50g to 1500 g.
In a second aspect, the present invention provides a tray, including: the supporting piece is provided with a through hole, and the wafer bearing structure covers the through hole.
Optionally, the support comprises one or more of a metallic material support, a polymeric material support, a ceramic material support, a glass material support, or a composite material support.
Optionally, the thickness of the support is between 1mm and 10 mm.
Optionally, the through hole includes a straight line segment and an arc segment, the arc segment is connected with the straight line segment end to end, and the wafer bearing structure covers the straight line segment and the arc segment.
Optionally, the outer contour of the support member is rectangular, and the straight line segment is parallel to one side of the support member.
The embodiment of the utility model provides an above-mentioned technical scheme compares with prior art has following advantage:
the embodiment of the utility model provides a wafer bearing structure and charging tray, wafer bearing structure includes: the wafer bonding device comprises a bonding layer and a bearing layer, wherein the bonding layer is formed on the bearing layer and used for bonding wafers, and the elongation of the bearing layer ranges from 0% to 2%. After the bonding layer is used for bonding the wafers, the wafers are not easy to displace in the process of transferring the wafers on one wafer bearing structure to the other wafer bearing structure; and when the wafer is subsequently stripped from the wafer bearing structure, the non-target wafer is not influenced when the target wafer is stripped.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.
In the drawings:
fig. 1 is a schematic structural diagram of a wafer carrying structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a tray provided by the embodiment of the present invention.
Reference numerals:
100. a wafer carrying structure; 110. a carrier layer; 120. an adhesive layer;
200. a material tray; 210. a through hole; 211. a straight line segment; 212. a circular arc section; 220. a support member; 300. a wafer.
Detailed Description
In order to clearly understand the technical features, objects, and effects of the present invention, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, it should be understood that the directions or positional relationships indicated by "front", "back", "upper", "lower", "left", "right", "longitudinal", "horizontal", "vertical", "horizontal", "top", "bottom", "inner", "outer", "head", "tail", etc. are configured and operated in specific directions based on the directions or positional relationships shown in the drawings, and are only for convenience of describing the present invention, but do not indicate that the device or element referred to must have a specific direction, and thus, should not be construed as limiting the present invention.
It is also noted that, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," "disposed," and the like are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. When an element is referred to as being "on" or "under" another element, it can be "directly" or "indirectly" on the other element or intervening elements may also be present. The terms "first", "second", "third", etc. are only for convenience in describing the present technical solution, and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated, whereby the features defined as "first", "second", "third", etc. may explicitly or implicitly include one or more of such features. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
Referring to fig. 1 and fig. 2, the wafer supporting structure 100 according to the embodiment of the present invention includes an adhesive layer 120 and a supporting layer 110, the adhesive layer 120 is formed on the supporting layer 110, the adhesive layer 120 is used for bonding a wafer 300, and the elongation of the supporting layer 110 ranges from 0% to 2%. The embodiment of the utility model provides a wafer bearing structure 100 utilizes adhesive layer 120 to bond wafer 300 to make wafer 300 can follow wafer bearing structure 100 and peel off, simultaneously, the value range through the percentage elongation that sets up bearing layer 110 is 0% to 5%, like this, when peeling off target wafer 300 from wafer bearing structure 100, bearing layer 110 is unlikely to take place deformation, other wafers 300 take place the displacement on wafer bearing structure 100 when can avoiding peeling off.
When the elongation of the carrier layer 110 is greater than 5%, when the wafer 300 is peeled off from the wafer carrier structure 100, the carrier layer 110 in the wafer carrier structure 100 is slightly deformed, which is not favorable for reusing the wafer carrier structure 100 many times. When the elongation of the carrier layer 110 is less than 5%, the carrier layer 110 in the wafer carrier structure 100 is not deformed when the wafer 300 is peeled off from the wafer carrier structure 100, so as to prolong the service life of the wafer carrier structure 100.
In one embodiment, the elongation of the carrier layer 110 is 0.5% to 1.5%. When the elongation of the carrier layer 110 is less than 1.5%, the carrier layer 110 is not easily deformed, and the transfer efficiency of the wafer 300 is improved.
The elongation is the elongation at which the carrier layer 110 is permanently deformed.
In a specific embodiment, the adhesive layer 120 may be coated on the carrier layer 110, and the adhesive layer 120 may be uniformly formed on the carrier layer 110 by the coating, so as to prevent the adhesive layer 120 from forming a protrusion on the carrier layer 110, which may affect the transfer of the wafer 300 between the plurality of wafer carrier structures 100.
In one embodiment, the elongation of the carrier layer 110 is less than 1%. The lower the ductility of the carrier layer 110, the better the displacement between the wafers 300 can be avoided.
Specifically, the carrier layer 110 includes a PET film. The carrier layer 110 comprises a PET film, and the molecular structure of PET is highly symmetrical and has a certain crystal orientation capability, so that PET has high film forming property. Meanwhile, PET also has good optical performance and weather resistance. The carrier layer 110 has good optical transparency.
The thickness of the carrier layer 110 ranges from 5um to 50um, and the thickness of the carrier layer 110 can be adjusted according to the size and thickness of the wafer.
Specifically, the adhesive layer 120 includes a viscosity loss agent. The viscosity loss agent can be one or more of a thermal viscosity loss agent and an illumination viscosity loss agent, and the illumination viscosity loss agent can be an ultraviolet viscosity loss agent. By causing the adhesive layer 120 to lose its adhesiveness, the bonding surface of the wafer 300 and the adhesive layer 120 can be peeled off, thereby transferring the wafer 300. The adhesive layer 120 is a single coating layer formed by a layer structure prepared by a release agent. The thickness of the adhesive layer 120 ranges from 1um to 70um, and the thickness of the adhesive layer 120 can be determined according to the thickness of the wafer 300 and the size of the wafer 300.
The adhesive layer 120 includes an ultraviolet light viscosity-reducing agent. The ultraviolet ray viscosity-reducing agent loses viscosity when irradiated by ultraviolet ray. The light intensity of the adhesive layer 120 can be adjusted according to the specific requirements, and after the adhesive layer 120 is adhered, the bonding surface of the adhesive layer 120 and the wafer 300 can be easily separated. Specifically, the viscosity of the ultraviolet ray viscosity-reducing agent is in the range of 50g to 1500 g. The viscosity of the ultraviolet light viscosity-reducing agent can be reduced to 5g to 10g under the irradiation of ultraviolet light with specific illumination intensity. The wafer 300 can be peeled from the wafer carrier 100 by reducing the viscosity of the adhesive layer 120.
Specifically, the light transmittance of the carrier layer 110 ranges from 75% to 100%, and the light transmittance of the adhesive layer 120 ranges from 75% to 100%. Thus, when the wafer 300 is peeled off from the wafer carrier 100, the wafer 300 can be peeled off from the adhesive layer 120 by irradiating the wafer with laser light so that the adhesive layer 120 loses its adhesiveness.
When the light transmittance of the carrier layer 110 is less than 75%, the laser beam is irradiated to the carrier layer 110, and the laser beam is hard to be irradiated to the adhesive layer 120 through the carrier layer 110, and the adhesive layer 120 and the wafer 300 are hard to lose their adhesiveness, and the wafer 300 is hard to be peeled off from the adhesive layer 120.
When the light transmittance of the carrier layer 110 is greater than 100%, the laser easily penetrates through the carrier layer 110 and irradiates the adhesive layer 120, so that the adhesion between the adhesive layer 120 and the wafer 300 is lost.
In a specific embodiment, the light transmittance of the carrier layer 110 ranges from 95% to 98%, so that the laser can more easily penetrate through the carrier layer 110 and irradiate onto the adhesive layer 120.
When the light transmittance of the adhesive layer 120 is greater than 75%, the adhesive layer 120 can be penetrated by laser irradiation, and the laser irradiation is performed on the contact surface between the adhesive layer 120 and the wafer 300, so that the contact surface between the adhesive layer 120 and the wafer 300 loses adhesiveness, and the wafer 300 can be peeled off from the adhesive layer 120.
In one embodiment, the light transmittance of the adhesive layer 120 ranges from 95% to 98%, so that the laser easily penetrates through the adhesive layer 120, thereby peeling the adhesive layer 120 from the wafer 300.
In one embodiment, the light transmittance of the wafer carrier structure 100 is greater than 92%, and the greater the light transmittance, the better, so that the wafer 300 and the adhesive layer 120 can be peeled off more easily.
The embodiment of the utility model provides a still provide a charging tray 200, include: the supporting member 220 has a through hole 210, and the wafer carrying structure 100 covers the through hole 210.
The wafer carrier 100 partially covers the supporting members 220, so that the supporting members 220 provide a supporting force to the wafer carrier 100, and the wafers 300 are not easily displaced during the transfer of the tray 200. The wafer carrier 100 is fixedly connected to the supporting member 220 by welding, bonding, or snapping. Specifically, the outer periphery of the wafer carrier 100 is adhered to the supporting member 220 by bonding.
Specifically, the wafer 300 is placed over the wafer carrier structure 100 covering the through-holes 210. The through hole 210 facilitates to place a laser generator on the side of the tray 200 away from the wafer 300, the laser generated by the laser generator irradiates the wafer carrying structure 100 through the through hole 210, and the adhesive layer 120 on the wafer carrying structure 100 loses its viscosity after being irradiated by the laser, so that the wafer 300 can be peeled off from the wafer carrying structure 100.
Specifically, the through hole 210 includes a straight line segment 211 and a circular arc segment 212, the circular arc segment 212 is connected with the straight line segment 211 end to end, and the wafer carrying structure 100 covers the straight line segment 211 and the circular arc segment 212. Be provided with straightway 211 and circular arc section 212 on the through-hole 210, straightway 211 and circular arc section 212 end to end connection, straightway 211 can be used for charging tray 200 to fix a position, shoots through CCD (charge coupled device) camera, fixes a position straightway 211 to make charging tray 200's locating position more accurate.
The outer contour of the supporting member 220 is one or more of a rectangle, a trapezoid, or a pentagon, and the straight line segment 211 is parallel to one side of the supporting member 220. The outer contour of the support member 220 is rectangular. In order to more accurately position the support member 220 and further determine the position of the wafer 300 placed on the support member 220, the CCD camera can be used to perform shooting and positioning through the straight line segment 211 on the through hole 210, thereby determining the position of the tray 200.
The support 220 includes one or more of a metallic material support, a polymer material support, a ceramic material support, a glass material support, or a composite material support. Specifically, the metal material includes stainless steel. The ceramic material comprises one or more of oxide ceramic, carbide ceramic and nitride ceramic. The composite material comprises fiber reinforced plastic, which is commonly known as a glass fiber reinforced plastic composite material.
The polymer material includes plastic, fiber, rubber, etc. These materials have good wear and corrosion resistance and can extend the service life of the support member 220.
The supporting member is made of a metal material, and the metal material has a certain hardness, so that after the wafer carrying structure 100 is bonded to the metal material supporting member, the metal material supporting member can provide a stable supporting force for the wafer carrying structure 100.
The supporting member is made of a ceramic material, and the ceramic material has high hardness and certain deformation resistance, so that the supporting stability of the wafer carrying structure 100 is further improved. And the ceramic material support piece is difficult to deform in the use process, and the service life of the tray 200 can be prolonged. It can be understood that the glass material has higher hardness, so that the glass material support member is not easily deformed after the wafer carrying structure 100 is bonded to the glass material support member, and the service life of the tray 200 is prolonged. The glass material may also comprise a toughened glass material.
The thickness of the supporting member 220 is between 1mm and 10 mm. The thickness that sets up support piece 220 is 1mm, has alleviateed support piece 220's weight, improves charging tray 200's transfer efficiency. The thickness of the support piece 220 is 10mm, so that the support piece 220 is prevented from being easily damaged in the process of transferring the tray 200, the service life of the tray 200 is prolonged, and the cost is saved. Of course, the thickness of the supporting member 220 may be set to be between 3mm and 7 mm. This reduces the overall weight of the tray 200 and also avoids the support member 220 being too thin to easily break during transfer of the tray 200.
Specifically, the tray 200 further includes an identification code, which is adhered to the support member 220. In this way, the type of wafer 300 on the support 220 may be identified by scanning the identification code. The identification code may be an RFID (radio frequency identification) code or a two-dimensional code.
It is to be understood that the foregoing examples merely represent preferred embodiments of the present invention, and that the description thereof is more specific and detailed, but not intended to limit the scope of the invention; it should be noted that, for those skilled in the art, the above technical features can be freely combined, and several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention; therefore, all changes and modifications that come within the meaning and range of equivalency of the claims are to be embraced within their scope.
Claims (10)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2021203552023 | 2021-02-08 | ||
| CN2021101804429 | 2021-02-08 | ||
| CN202120355202 | 2021-02-08 | ||
| CN202110180442 | 2021-02-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214625008U true CN214625008U (en) | 2021-11-05 |
Family
ID=76615736
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120727267.6U Active CN214625008U (en) | 2021-02-08 | 2021-04-08 | Wafer Carrier Structure and Tray |
| CN202110379655.4A Pending CN113078096A (en) | 2021-02-08 | 2021-04-08 | Wafer bearing structure and tray |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110379655.4A Pending CN113078096A (en) | 2021-02-08 | 2021-04-08 | Wafer bearing structure and tray |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN214625008U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078096A (en) * | 2021-02-08 | 2021-07-06 | 深圳市丰泰工业科技有限公司 | Wafer bearing structure and tray |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115140412B (en) * | 2022-07-04 | 2023-05-30 | 深圳市华星光电半导体显示技术有限公司 | Bearing device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656281B (en) * | 2008-08-18 | 2011-04-06 | 晶元光电股份有限公司 | Wafer light emitting structure and manufacturing method thereof |
| US20150158649A1 (en) * | 2012-07-20 | 2015-06-11 | 3M Innovative Properties Company | Component carrier tape with uv radiation curable adhesive |
| JP5603453B1 (en) * | 2013-04-26 | 2014-10-08 | 古河電気工業株式会社 | Adhesive tape for semiconductor wafer protection |
| US10566254B2 (en) * | 2016-03-30 | 2020-02-18 | Mitsui Chemicals Tohcello, Inc. | Method for manufacturing semiconductor device |
| CN109473531B (en) * | 2018-10-30 | 2020-05-05 | 中山大学 | A metal tray for fixing wafers in an automated process line |
| CN109950194B (en) * | 2019-04-11 | 2021-04-16 | 京东方科技集团股份有限公司 | Chip transfer substrate and chip transfer method |
| CN109950183A (en) * | 2019-04-11 | 2019-06-28 | 深圳市丰泰工业科技有限公司 | Once shift the die bond technique of multiple chips |
| CN110239947B (en) * | 2019-07-04 | 2024-12-13 | 范群意 | A wafer automatic testing machine |
| CN111599912B (en) * | 2020-06-01 | 2020-11-24 | 广东工业大学 | A flexible and stretchable Micro-LED mass transfer device and method |
| CN214625008U (en) * | 2021-02-08 | 2021-11-05 | 深圳市丰泰工业科技有限公司 | Wafer Carrier Structure and Tray |
-
2021
- 2021-04-08 CN CN202120727267.6U patent/CN214625008U/en active Active
- 2021-04-08 CN CN202110379655.4A patent/CN113078096A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078096A (en) * | 2021-02-08 | 2021-07-06 | 深圳市丰泰工业科技有限公司 | Wafer bearing structure and tray |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113078096A (en) | 2021-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN214625008U (en) | Wafer Carrier Structure and Tray | |
| TWI408201B (en) | Adhesive tape and the use of its solar module | |
| TWI494408B (en) | Adhesive sheet for manufacturing semiconductor device, and semiconductor device manufacturing method using the same | |
| TWI521578B (en) | Dicing-diebonding film | |
| CN109119412B (en) | Light emitting device and method for manufacturing the same | |
| CN110267375B (en) | Preparation process of graphene electric heating film and graphene electric heating film | |
| JP2010062205A (en) | Method for manufacturing dicing die bonding film | |
| CN101617390A (en) | Dicing/die bonding film | |
| TWI649391B (en) | Next, the sheet, and the cut grain bonding film | |
| TW201246636A (en) | Flexible LED device and method of making | |
| TW201905995A (en) | Tangent ribbon integrated adhesive sheet | |
| TW201543561A (en) | Die-dicing bonding film, die-dicing bonding film with dicing sheet, semiconductor device, and semiconductor device manufacturing method | |
| JP5318815B2 (en) | Solar cell module and method for manufacturing solar cell module | |
| TW507285B (en) | Protecting method for semiconductor wafer and surface protecting adhesive film for semiconductor wafer used said method | |
| KR20140001218A (en) | Stacked body and method for detaching stacked body | |
| TW201930528A (en) | Composition for sinter bonding, sheet for sinter bonding, and dicing tape having sheet for sinter bonding | |
| TW200919657A (en) | Adhesive for circuit member connection | |
| CN107683534B (en) | Light emitting module | |
| JP6605846B2 (en) | Masking adhesive tape | |
| CN103360971B (en) | Semiconductor device manufacture bonding sheet and semiconductor device and manufacture method thereof | |
| US11791302B2 (en) | Thermosetting sheet, dicing die bonding film, and semiconductor apparatus | |
| CN1639290A (en) | Thermocurable electroconductive adhesive sheet, connection structure and connection method using the same | |
| JP2012064714A (en) | Pressure-sensitive adhesive tape for resin seal, and method for manufacturing resin seal-type semiconductor device | |
| JP5338543B2 (en) | Optical semiconductor device and manufacturing method thereof | |
| TWI602228B (en) | Divide plate cut ‧ wafer bonding film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20250213 Address after: 343000 East Industrial Park, Suichuan County, Ji'an City, Jiangxi Province Patentee after: Jiangxi Pengpai Technology Co.,Ltd. Country or region after: China Address before: 518000 101, 90-4 Dayang Road, Xintian community, Fuhai street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN FENGTAI INDUSTRIAL TECHNOLOGY Co.,Ltd. Country or region before: China |