CN213425411U - Femtosecond mode-locked laser based on disordered laser crystal - Google Patents
Femtosecond mode-locked laser based on disordered laser crystal Download PDFInfo
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- CN213425411U CN213425411U CN202021550995.6U CN202021550995U CN213425411U CN 213425411 U CN213425411 U CN 213425411U CN 202021550995 U CN202021550995 U CN 202021550995U CN 213425411 U CN213425411 U CN 213425411U
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Abstract
The utility model discloses a femto second mode-locked laser based on unordered laser crystal, this laser instrument includes: the device comprises a pumping source, a collimating mirror, a focusing mirror, a concave input mirror, a gain medium, a first concave high-reflection mirror, a second concave high-reflection mirror, a mode locking element, a first plane chirped mirror, a second plane chirped mirror and a coupling output mirror; pumping light output by a pumping source sequentially passes through a collimating lens, a focusing lens and a concave input lens and then is injected into a gain medium; the concave input mirror, the first concave high-reflection mirror, the second concave high-reflection mirror, the mode locking element, the first plane chirped mirror, the second plane chirped mirror and the plane output mirror form a laser resonant cavity. The utility model discloses a disorder laser crystal who has great stimulated absorption cross section and stimulated emission cross section, broad fluorescence spectrum is as the gain medium, can realize 2 microns femto second mode locking laser output of high power, high beam quality, ultrashort pulse width.
Description
Technical Field
The utility model relates to a well infrared solid laser technical field, concretely relates to femto second mode-locked laser based on unordered laser crystal.
Background
Thanks to the rapid development of laser crystal materials and mode locking technology, the femtosecond mode locking laser technology of near infrared band is mature, and related commercial products are continuously produced. With the continuous development of laser physics, people find that many processes of interaction between light and substances are closely related to laser wavelength, so that the wavelength coverage range of femtosecond mode-locked laser is urgently needed to be widened. In particular, the 2-micron femtosecond mode-locked laser has unique advantages in the fields of time-resolved molecular spectroscopy, optical frequency comb generation, optical parametric chirped pulse amplification, semiconductor material micromachining and the like.
At present, the commonly used 2-micron laser crystal materials mainly comprise Ho: YAG, Tm: YLF, Tm: YAP, Ho, Tm: YLF and the like, but the fluorescence spectra of the traditional crystal materials are narrow, and ultrashort pulse and wide tuning output are not easy to realize. In recent years, the concept of disordered laser crystal materials has been proposed, which not only retains the good thermodynamic and optical properties of the conventional crystal materials, but also broadens the fluorescence spectrum, which is very beneficial to the generation of ultrashort pulse laser. It is reported that 2 micron femtosecond mode-locked laser with pulse width as short as tens of femtoseconds has been generated by disordered laser crystals such as Tm: CLNGG, Tm: CNNGG, Tm, Ho: CLNGG, Tm, Ho: CNGG, Tm: CALYO, Tm, Ho: CALGO and the like. Because the pump source is required to have better beam quality by generating the ultrashort pulse width femtosecond mode-locked laser, a titanium sapphire laser is usually adopted as the pump source, but the titanium sapphire laser has the defects of large volume, high price and the like; in addition, limited by the output power of the titanium-sapphire laser, the output power of the 2-micron femtosecond mode-locked laser based on disordered laser crystals is still at a lower level (<400mW) at present. In recent years, distributed bragg reflection tapered semiconductor lasers have been developed rapidly, and semiconductor laser output with high power (>10W), high beam quality and narrow line width has been achieved at present; compared with a titanium sapphire laser, the distributed Bragg reflection conical semiconductor laser has the advantages of low cost and simple structure, and becomes a very potential pump source of the femtosecond mode-locked laser.
In summary, there is a need in the industry to develop a mode-locked laser capable of outputting 2 μm femtosecond mode-locked laser with high power, high beam quality and ultrashort pulse width, and the volume and cost of its pumping source are greatly reduced.
SUMMERY OF THE UTILITY MODEL
The utility model aims at overcoming the not enough of above prior art existence, provide one kind and can realize 2 microns femto second mode locking laser output of high power, high beam quality, ultrashort pulse width to reduce the volume of pumping source and the femto second mode locking laser based on unordered laser crystal of cost.
The purpose of the utility model is realized through the following technical scheme:
a femtosecond mode-locked laser based on disordered laser crystals, comprising: the device comprises a pumping source (1), a collimating mirror (2), a focusing mirror (3), a concave input mirror (4), a gain medium (5), a first concave high-reflection mirror (6), a second concave high-reflection mirror (7), a mode locking element (8), a first plane chirped mirror (9), a second plane chirped mirror (10) and a coupling output mirror (11); pump light output by the pump source (1) sequentially passes through the collimating lens (2), the focusing lens (3) and the concave input lens (4) and then is injected into the gain medium (5); the laser cavity comprises a concave surface input mirror (4), a first concave surface high-reflection mirror (6), a second concave surface high-reflection mirror (7), a mode locking element (8), a first plane chirped mirror (9), a second plane chirped mirror (10) and a coupling output mirror (11), a pumping source (1) is used for outputting pumping light, the pumping light induces the population inversion of a gain medium (5) and forms laser oscillation in the laser cavity, and finally femtosecond mode locking laser is output through the coupling output mirror (11); the gain medium (5) is a disordered laser crystal.
Preferably, the gain medium (5) is any one of Tm: GYAP, Tm: CLNGG, Tm: CNNGG, Tm: CALYO, Tm, Ho: CLNGG, Tm, Ho: CNGG, Tm, Ho: CALGO.
Preferably, the pump source (1) is a high power high beam quality distributed bragg reflector tapered semiconductor laser.
Preferably, the mode locking element (8) is any one of a saturable absorber mirror, graphene and a single-walled carbon nanotube saturable absorber.
Preferably, if the mode locking element (8) is a graphene and single-wall carbon nanotube saturable absorber, the mode locking element (8) is a mode locking element formed by growing the graphene or single-wall carbon nanotube saturable absorber by a chemical vapor deposition method and transferring the grown graphene or single-wall carbon nanotube saturable absorber to a laser high-reflection mirror with a wave band of 2 microns.
Preferably, the gain medium (5) is placed in the laser cavity at brewster's angle.
Preferably, the femtosecond mode-locked laser output by the coupling output mirror (11) is 2-micron femtosecond mode-locked laser.
Preferably, the first plane-chirped mirror (9) and the second plane-chirped mirror (10) compensate for dispersion within the laser resonator by reflecting the femtosecond laser light multiple times each.
A method for generating femtosecond mode-locked laser based on disordered laser crystal comprises the following steps:
s1, sequentially passing the pump light emitted by the pump source (1) through the collimating lens (2), the focusing lens (3) and the concave input lens (4), focusing the pump light into a gain medium (5) placed at a Brewster angle, causing population inversion of the gain medium (5) and forming laser oscillation in a laser resonant cavity; wherein the gain medium (5) is a disordered laser crystal;
s2, the laser in the laser resonant cavity is reflected to a second concave reflector (7) through a first concave high-reflection mirror (6), then is focused on a mode locking element (8), returns along the original path, and then passes through the second concave high-reflection mirror (7), the first concave high-reflection mirror (6), a gain medium (5) and a concave input mirror (4) in sequence, and is deflected and reflected to a first plane chirp mirror (9) and a second plane chirp mirror (10) through the concave input mirror (4);
s3, multiple reflection of laser between the first plane chirp mirror (9) and the second plane chirp mirror (10) is carried out to realize intracavity dispersion compensation;
and S4, outputting 2-micron femtosecond mode-locked laser with high power, high beam quality and ultrashort pulse width through the coupling output mirror (11).
Compared with the prior art, the utility model have following advantage:
1. the disordered laser crystal with better thermodynamic property and wider fluorescence spectrum is selected as the gain medium, and the output of the mode-locked pulse laser with 2 microns of dozens of femtoseconds is successfully realized.
2. The distributed Bragg reflection conical semiconductor laser is adopted to replace the traditional titanium sapphire laser as a pumping source, so that the volume and the cost of a pumping laser system are reduced.
3. The distributed Bragg reflection conical semiconductor laser has the characteristics of high output power, good beam quality and narrow line width, and can easily obtain 2-micron femtosecond mode-locked laser output with high power, high beam quality and ultrashort pulse width.
Drawings
The accompanying drawings, which form a part of the present application, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of a femtosecond mode-locked laser based on a disordered laser crystal according to example 1.
Fig. 2 is a schematic structural diagram of a femtosecond mode-locked laser based on a disordered laser crystal in example 2.
Detailed Description
The present invention will be further explained with reference to the drawings and examples.
Example 1
Fig. 1 is a schematic diagram of an optical path structure of a 2 μm femtosecond mode-locked laser based on an disordered laser crystal in embodiment 1, and the optical path structure includes a 794nm distributed bragg reflector conical semiconductor laser 1, a collimating mirror 2, a focusing mirror 3, a concave input mirror 4, a gain medium 5, a first concave high-reflection mirror 6, a second concave high-reflection mirror 7, a mode-locking element 8, a first plane chirp mirror 9, a second plane chirp mirror 10, and a coupling output mirror 11. The gain medium 5 is a disordered laser crystal (Tm: GYAP).
The pumping light emitted by the 794nm distributed Bragg reflection conical semiconductor laser 1 sequentially passes through the collimating lens 2, the focusing lens 3 and the concave input lens 4 and is focused into the gain medium 5 placed at the Brewster angle, so that population inversion is caused and laser oscillation is formed in the resonant cavity. The laser in the resonant cavity is reflected to a second concave reflector 7 after passing through a first concave high-reflection mirror 6, then is focused on a mode locking element 8 and returns along the original path, and then is deflected and reflected to a first plane chirp mirror 9 and a second plane chirp mirror 10 through the second concave high-reflection mirror 7, the first concave high-reflection mirror 6, a gain medium 5 and a concave input mirror 4 in sequence, the laser is reflected for multiple times between the first plane chirp mirror 9 and the second plane chirp mirror 10 to realize intra-cavity dispersion compensation, and finally 2 micron femtosecond mode locking laser with high power, high beam quality and ultrashort pulse width is output through a coupling output mirror 11.
Example 2
Fig. 2 is a schematic diagram of another 2 μm femtosecond mode-locked laser optical path structure based on an unordered laser crystal in example 2, which is a further improvement on example 1, and is different from example 1 in that: a Loyt type birefringent tuning filter 12 is inserted into the laser resonant cavity to realize the tuning output of 2-micron femtosecond mode-locked laser.
To sum up, the utility model discloses a have great stimulated absorption cross-section and stimulated emission cross-section, broad fluorescence spectrum's unordered laser crystal as the gain medium, utilize the high beam quality of high power's distribution Bragg reflection toper semiconductor laser as the pumping source, can realize the 2 microns femto second mode locking laser output of high power, high beam quality, ultrashort pulse width.
The above-mentioned specific implementation is the preferred embodiment of the present invention, can not be right the utility model discloses the limit, any other does not deviate from the technical scheme of the utility model and the change or other equivalent replacement modes of doing all contain within the scope of protection of the utility model.
Claims (8)
1. A femtosecond mode-locked laser based on disordered laser crystals is characterized by comprising: the device comprises a pumping source (1), a collimating mirror (2), a focusing mirror (3), a concave input mirror (4), a gain medium (5), a first concave high-reflection mirror (6), a second concave high-reflection mirror (7), a mode locking element (8), a first plane chirped mirror (9), a second plane chirped mirror (10) and a coupling output mirror (11); pump light output by the pump source (1) sequentially passes through the collimating lens (2), the focusing lens (3) and the concave input lens (4) and then is injected into the gain medium (5); a concave surface input mirror (4), a first concave surface high-reflection mirror (6), a second concave surface high-reflection mirror (7), a mode locking element (8), a first plane chirped mirror (9), a second plane chirped mirror (10) and a coupling output mirror (11) form a laser resonant cavity,
the pumping source (1) is used for outputting pumping light, the pumping light induces population inversion of the gain medium (5) and forms laser oscillation in the laser resonant cavity, and finally the femtosecond mode-locked laser is output through the coupling output mirror (11);
the gain medium (5) is a disordered laser crystal.
2. The femtosecond mode-locked laser based on disordered laser crystal according to claim 1, wherein the gain medium (5) is any one of Tm: GYAP, Tm: CLNGG, Tm: CNNGG, Tm: CALYO, Tm, Ho: CLNGG, Tm, Ho: CNGG, Tm, and Ho: CALGO.
3. The femtosecond mode-locked laser based on disordered laser crystals as set forth in claim 1, wherein the pump source (1) is a high-power high-beam-quality distributed bragg reflector tapered semiconductor laser.
4. The femtosecond mode-locked laser based on disordered laser crystals as set forth in claim 1, wherein the mode-locking element (8) is any one of a saturable absorber mirror, graphene, and a single-walled carbon nanotube saturable absorber.
5. The femtosecond mode-locked laser based on disordered laser crystals as set forth in claim 4, wherein if the mode-locked element (8) is graphene and single-walled carbon nanotube saturable absorber, the mode-locked element (8) is a mode-locked element formed by growing the graphene or single-walled carbon nanotube saturable absorber by chemical vapor deposition and transferring the mode-locked element onto a laser high-reflectivity mirror with a 2-micron waveband.
6. The femtosecond mode-locked laser based on disordered laser crystal according to claim 1, wherein the gain medium (5) is placed in the laser resonator at brewster's angle.
7. The femtosecond mode-locked laser based on disordered laser crystals as set forth in claim 1, wherein the femtosecond mode-locked laser outputted by the coupling-out mirror (11) is 2-micrometer femtosecond mode-locked laser.
8. The femtosecond mode-locked laser based on disordered laser crystals as set forth in claim 1, wherein the first plane-chirped mirror (9) and the second plane-chirped mirror (10) compensate dispersion in the laser cavity by reflecting the femtosecond laser light multiple times each.
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| CN111740303A (en) * | 2020-07-30 | 2020-10-02 | 暨南大学 | Femtosecond mode-locked laser based on disordered laser crystal and laser generation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111740303A (en) * | 2020-07-30 | 2020-10-02 | 暨南大学 | Femtosecond mode-locked laser based on disordered laser crystal and laser generation method |
| CN111740303B (en) * | 2020-07-30 | 2024-07-12 | 暨南大学 | Femtosecond mode-locked laser based on disordered laser crystal and laser generation method |
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