CN213180487U - Semiconductor device and electronic apparatus - Google Patents
Semiconductor device and electronic apparatus Download PDFInfo
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- CN213180487U CN213180487U CN201990000645.1U CN201990000645U CN213180487U CN 213180487 U CN213180487 U CN 213180487U CN 201990000645 U CN201990000645 U CN 201990000645U CN 213180487 U CN213180487 U CN 213180487U
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- detection
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 131
- 238000001514 detection method Methods 0.000 claims abstract description 177
- 239000011347 resin Substances 0.000 claims abstract description 88
- 229920005989 resin Polymers 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000012545 processing Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 description 26
- 230000007423 decrease Effects 0.000 description 8
- 239000000499 gel Substances 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000009530 blood pressure measurement Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004078 waterproofing Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
A semiconductor device (10) comprises: a base substrate (12); a detection element (16) provided on the base substrate (12) and provided with a detection unit (16 d); a 1 st connecting member (20) that electrically connects the base substrate (12) and the detection element (16); a resin package (22) which is provided on the base substrate (12), in which the detection element (16) and the 1 st connecting member (20) are embedded, and which is provided with an exposure hole (22a) that exposes the detection portion (16d) of the detection element (16) to the outside; and a cylindrical member (24) which is attached to the resin package (22) and has a through hole (24a) that communicates with the exposure hole (22 a).
Description
Technical Field
The utility model relates to a semiconductor device and electronic equipment of waterproof type.
Background
As an example of a waterproof type semiconductor device, patent document 1 discloses a waterproof type pressure sensor that is attached to an article of electronic equipment such as a pressure measuring device and measures pressure (for example, air pressure). In the pressure sensor, a pressure detection element and a circuit element are housed in an internal space defined by a housing and a nozzle-type cover attached to the housing. The pressure detecting element is electrically connected to the circuit element by a Bonding wire. Further, the internal space in which the pressure detection element is housed communicates with the outside via a pressure introduction hole formed in the cover.
In the case of the pressure sensor described in patent document 1, the internal space is filled with a gel-like sealing resin such as fluorine gel or silica gel. The gel-like sealing resin is embedded with a pressure detecting element, a circuit element, and a bonding wire connecting the pressure detecting element and the circuit element. Thus, the electrical connection between the pressure detection element and the circuit element (the bonding wire and the pad on the pressure detection element (japanese: パッド) and the pad on the circuit element connected by the bonding wire) can be waterproofed against the liquid such as water entering the internal space of the pressure sensor from the outside. Further, the measured pressure is transmitted to the pressure detection element by the gel-like sealing resin. In the case of the pressure sensor described in patent document 1, an O-ring is engaged with an outer peripheral surface of a cap of the pressure sensor in order to prevent liquid from entering the article through a gap between the article and the cap.
Documents of the prior art
Patent document
Patent document 1: japanese registered Utility model No. 3212911
SUMMERY OF THE UTILITY MODEL
Problem to be solved by utility model
However, in the case of the pressure sensor described in patent document 1, the gel-like sealing resin such as fluorine gel or silica gel is repeatedly deformed or chemically deteriorated under the influence of the pressure measurement environment, and as a result, the waterproof performance and the pressure detection performance (pressure transmission capability) may be deteriorated. Further, the pressure sensor described in patent document 1 requires an internal space for storing the gel-like sealing resin and protecting the gel-like sealing resin from external forces other than pressure, and therefore, the structure thereof is complicated. That is, although the pressure sensor described in patent document 1 achieves waterproof performance and pressure detection performance with a complicated structure, the waterproof performance and the pressure detection performance may be degraded.
Therefore, an object of the present invention is to provide a semiconductor device and an electronic device including the semiconductor device, which have a simple structure and which can realize waterproof performance and detection performance and suppress a decrease in the waterproof performance and the detection performance.
Means for solving the problems
In order to solve the above technical problem, according to an aspect of the present invention,
provided is a semiconductor device having:
a base substrate;
a detection element provided on the base substrate and including a detection unit;
a 1 st connecting member electrically connecting the base substrate and the detection element;
a resin package provided on the base substrate, having the detection element and the 1 st connection member embedded therein, and having an exposure hole for exposing a detection portion of the detection element to the outside; and
and a cylindrical member attached to the resin package and having a through hole communicating with the exposure hole.
In addition, according to another technical proposal of the utility model,
an electronic device is provided, which includes:
the semiconductor device;
an O-ring engaged with the cylindrical member of the semiconductor device; and
a housing mounting the semiconductor device and the O-ring.
Effect of the utility model
According to the present invention, in the semiconductor device and the electronic apparatus including the semiconductor device, the waterproof performance and the detection performance can be realized with a simple configuration, and the degradation of these performances can be suppressed.
Drawings
Fig. 1 is a perspective view of a semiconductor device according to embodiment 1 of the present invention.
Fig. 2A is a plan view of the semiconductor device according to embodiment 1 of the present invention.
Fig. 2B is a plan view of the semiconductor device according to embodiment 1 of the present invention showing a state in the resin package.
Fig. 3A is a cross-sectional view of the semiconductor device along line a-a of fig. 2A.
Fig. 3B is a cross-sectional view of the semiconductor device along line B-B of fig. 2A.
Fig. 4 is a perspective view of a semiconductor device according to embodiment 2 of the present invention.
Fig. 5 is a perspective view of a semiconductor device according to embodiment 3 of the present invention.
Fig. 6 is a cross-sectional view of a semiconductor device according to embodiment 3 of the present invention.
Fig. 7 is a plan view of the semiconductor device according to embodiment 4 of the present invention showing a state in the resin package.
Fig. 8A is a cross-sectional view of the semiconductor device along line C-C of fig. 7.
Fig. 8B is a cross-sectional view of the semiconductor device along line D-D of fig. 7.
Fig. 9 is a plan view of the semiconductor device according to embodiment 5 of the present invention showing a state in the resin package.
Fig. 10 is a cross-sectional view of a semiconductor device according to embodiment 5 of the present invention.
Fig. 11 is a plan view of the semiconductor device according to embodiment 6 of the present invention showing a state in the resin package.
Fig. 12 is a cross-sectional view of a semiconductor device according to embodiment 6 of the present invention.
Fig. 13 is a cross-sectional view of a semiconductor device according to embodiment 7 of the present invention.
Fig. 14 is a sectional view of a semiconductor device according to embodiment 8 of the present invention.
Fig. 15 is a cross-sectional view of a semiconductor device according to embodiment 9 of the present invention.
Fig. 16 is a sectional view of a semiconductor device according to embodiment 10 of the present invention.
Fig. 17 is a cross-sectional view of a semiconductor device according to embodiment 11 of the present invention.
Detailed Description
The utility model discloses a technical scheme's semiconductor device has: a base substrate; a detection element provided on the base substrate and including a detection unit; a 1 st connecting member electrically connecting the base substrate and the detection element; a resin package provided on the base substrate, having the detection element and the 1 st connection member embedded therein, and having an exposure hole for exposing a detection portion of the detection element to the outside; and a cylindrical member attached to the resin package and having a through hole communicating with the exposure hole.
According to this aspect, in the semiconductor device, the waterproof performance and the detection performance can be realized with a simple configuration and the degradation of these performances can be suppressed.
For example, the cylindrical member may include a cylindrical portion and a flange portion connected to one end of the cylindrical portion and attached to the resin package.
For example, the cylindrical member may be a cylindrical member having one end attached to the resin package.
For example, the cylindrical member may include an annular groove surrounding an outer opening of the through hole on an outer surface of the outer opening.
The semiconductor device may further include: a circuit element provided on the base substrate; and a 2 nd connecting member electrically connecting the base substrate and the circuit element, the circuit element and the 2 nd connecting member being embedded in the resin package.
The detection element may be provided on the base substrate with the circuit element interposed therebetween.
The 1 st connecting member may be electrically connected to the base substrate via the circuit element and the 2 nd connecting member.
In a plan view, the center of the circuit element may coincide with the center of the detection element. With such a configuration, it is possible to reduce the variation in stress applied from the surrounding resin package to the circuit element and the detection element, as compared with the case of the above-described center shift.
The semiconductor device may further include a circuit element incorporated in the detection element.
The base substrate may be provided with a signal processing circuit that processes an output signal of the detection element.
For example, the connecting member may be a bonding wire or a bump.
For example, the detection element may be a pressure sensor that detects a change in pressure.
The utility model discloses a further technical scheme's electronic equipment includes: the semiconductor device; an O-ring engaged with the cylindrical member of the semiconductor device; and a housing to which the semiconductor device and the O-ring are mounted.
According to this aspect, in the electronic apparatus, the waterproof performance and the detection performance can be realized with a simple configuration, and the degradation of these performances can be suppressed.
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(embodiment mode 1)
Fig. 1 is a perspective view of a semiconductor device according to embodiment 1 of the present invention. Fig. 2A and 2B are plan views of the semiconductor device according to embodiment 1. Fig. 2B shows the inside of the resin package. Fig. 3A is a sectional view taken along line a-a of fig. 2A, and fig. 3B is a sectional view taken along line B-B of fig. 2A. The X-Y-Z orthogonal coordinate system shown in the above figures is used for facilitating understanding of the present invention, and does not limit the present invention.
The semiconductor device 10 according to embodiment 1 is a pressure sensor for measuring pressure, and as shown in fig. 1, includes a base substrate 12, a circuit element 14 provided on the base substrate 12, and a detection element 16 provided on the circuit element 14. The base substrate 12 includes external connection terminals 12c on a 2 nd surface 12d opposite to the 1 st surface 12 a. The semiconductor device 10 is electrically connected to another external device (not shown) through the external connection terminal 12 c.
As shown in fig. 3A and 3B, the base substrate 12 is a substrate having a 1 st surface 12a, and the 1 st surface 12a is mounted with the circuit element 14. As shown in fig. 2B, the base substrate 12 includes a plurality of pads 12B provided on the 1 st surface 12a thereof and electrically connected to the circuit elements 14.
As shown in fig. 3A and 3B, the circuit element 14 includes a 1 st surface 14a and a 2 nd surface 14B facing the 1 st surface 14 a. The Circuit element 14 is an element having an Application Specific Integrated Circuit (ASIC). In embodiment 1, the 2 nd surface 14b of the circuit element 14 is mounted on the 1 st surface 12a of the base substrate 12. As shown in fig. 2B, the circuit element 14 includes a plurality of 1 st pads 14c provided on the 1 st surface 14a thereof and electrically connected to the pads 12B of the base substrate 12. The 1 st pad 14c of the circuit element 14 and the pad 12b of the base substrate 12 are electrically connected by a bonding wire 18 as a connecting member. The circuit element 14 includes a plurality of 2 nd pads 14d electrically connected to the detection element 16 on the 1 st surface 14a thereof in addition to the 1 st pad 14 c.
The circuit element 14 is an element further provided with a signal processing circuit that processes a signal output from the detection element 16 and outputs the processed signal to the base substrate 12. For example, in the case of embodiment 1, the circuit element 14 includes a converter that converts the voltage signal output from the detection element 16 into a digital signal, a filter that filters the digital signal from the converter, a temperature sensor that detects a temperature, a processor that corrects the filtered digital signal based on the detected temperature of the temperature sensor, a memory that stores a correction coefficient or the like used when correcting the digital signal using the detected temperature, and the like.
In embodiment 1, the detection element 16 is a pressure sensor element for measuring pressure, and includes a 1 st surface 16a and a 2 nd surface 16B as shown in fig. 3A and 3B. The detection element 16 is, for example, a piezoresistive pressure sensor element or a capacitive pressure sensor element, and is an mems (micro Electro Mechanical systems) element. In embodiment 1, the detection element 16 is provided on the base substrate 12 with the circuit element 14 interposed therebetween. Specifically, the detection element 16 is mounted on the 1 st surface 14a of the circuit element 14 with the 2 nd surface 16b thereof.
As shown in fig. 2B, the detection element 16 includes a plurality of pads 16c provided on the 1 st surface 16a thereof and electrically connected to a plurality of 2 nd pads 14d of the circuit element 14. The pad 16c of the detection element 16 and the 2 nd pad 14d of the circuit element 14 are electrically connected by a bonding wire 20 as a connection member. That is, the bonding wires 20 of the detection element 16 are electrically connected to the base substrate 12 via the circuit element 14 and the bonding wires 18.
The detection element 16 further includes a detection portion 16d on the 1 st surface 16a thereof, on which pressure acts. In embodiment 1, the detection unit 16d of the detection element 16 as a pressure sensor element is a Diaphragm (Membrane) or a Diaphragm (Diaphragm) that receives pressure. The detection unit 16d is provided with, for example, a passivation film, and is water-repellent.
As shown in fig. 1, 3A, and 3B, the circuit element 14, the detection element 16, and the bonding wires 18 and 20 that electrically connect the circuit element 14 and the detection element 16 are embedded in a resin package 22.
Specifically, the resin package 22 is a package obtained by molding a hard resin such as a thermosetting resin on the 1 st surface 12a of the base substrate 12. A portion of the 1 st surface 12a of the base substrate 12 including the plurality of pads 12b is covered with the resin package 22 so as to be protected and rendered waterproof. The circuit element 14 (particularly, the 1 st pad 14c and the 2 nd pad 14d), the detection element 16 (particularly, the pad 16c), and the bonding wires 18 and 20 electrically connecting the circuit element 14 and the detection element 16 are protected and protected from water by being embedded in the resin package 22. That is, the electrical connection between the base substrate 12 and the circuit element 14 and the electrical connection between the circuit element 14 and the detection element 16 are waterproofed by the resin package 22.
In order to apply pressure to the detection portion 16d of the detection element 16, as shown in fig. 1 and 2A, the resin package 22 includes an exposure hole 22A for exposing the detection portion 16d of the detection element 16 to the outside of the resin package 22. As shown in fig. 3A and 3B, in embodiment 1, the exposure hole 22a opens in the overlapping direction (Z-axis direction) of the base substrate 12, the circuit element 14, and the detection element 16. The opening of the exposure hole 22a is provided on an end surface 22b (hereinafter referred to as "opening surface") of the resin package 22 in the positive Z-axis direction. The pressure is applied to the detection portion 16d of the detection element 16 exposed to the outside of the resin package 22 through the exposure hole 22a, and the detection element 16 can measure the pressure. Further, a portion of the detection element 16 including the detection portion 16d exposed to the outside through the exposure hole 22a is waterproofed with, for example, a passivation film. In embodiment 1, the exposure hole 22a has a circular shape in a plan view (as viewed in the Z-axis direction) of the opening portion as shown in fig. 1, and has a tapered shape whose sectional area decreases as the detection portion 16d of the detection element 16 approaches from the opening portion as shown in fig. 3A and 3B, but may have another shape.
As shown in fig. 3A and 3B, a cylindrical member 24 is attached to the opening surface 22B of the resin package 22, and the cylindrical member 24 engages with and supports the O-ring OR. The cylindrical member 24 includes a through hole 24a communicating with the exposure hole 22a of the resin package 22. The pressure is applied to the detection portion 16d of the detection element 16 through the through hole 24a and the exposure hole 22a communicating with the through hole 24 a. That is, the exposure holes 22a and the through holes 24a constitute pressure introduction holes.
In embodiment 1, the cylindrical member 24 is made of a metal material and attached to the resin package 22 with an adhesive, for example. In embodiment 1, as shown in fig. 1, the cylindrical member 24 includes a cylindrical portion 24b and a flange portion 24c connected to one end of the cylindrical portion 24b and attached to the opening surface 22b of the resin package 22. The through hole 24a of the cylindrical member 24 is defined by a cylindrical portion 24 b. That is, the inner space of the cylindrical portion 24b functions as the through hole 24 a.
In embodiment 1, as shown in fig. 3A and 3B, an O-ring OR is fitted to the cylindrical portion 24B of the cylindrical member 24. The O-ring OR is specifically described.
As shown in fig. 3A and 3B, the semiconductor device 10 is used by being mounted on an article G of an electronic apparatus. The article G is, for example, a case of an electronic device such as a pressure measuring device. The article G is provided with a through hole Ga that communicates the inside and the outside of the article G, and the semiconductor device 10 is disposed in the through hole Ga. In order to measure the pressure outside the article G, the semiconductor device 10 is attached to the article G such that the exposure hole 22a and the through hole 24a of the resin package 22 communicate with the outside. In order to seal the gap between the semiconductor device 10 thus arranged and the inner circumferential surface Gb of the through hole Ga of the article G, an O-ring OR is arranged in the gap.
In order to support the O-ring OR, the semiconductor device 10 includes a cylindrical member 24. In embodiment 1, as shown in fig. 1, 3A, and 3B, the cylindrical member 24 includes a cylindrical portion 24B and a flange portion 24 c. The flange portion 24c receives an O-ring OR fitted to the outer peripheral surface 24d of the cylindrical portion 24 b. With such a cylindrical member 24, the O-ring OR is supported by the semiconductor device 10 such that the exposure hole 22a is located inside the O-ring OR when viewed in the opening direction (Z-axis direction) of the exposure hole 22a of the resin package 22. The semiconductor device 10 can be mounted on the article G with the O-ring OR supported by the cylindrical member 24. In addition, in the case of embodiment 1, since the cylindrical member 24 is made of a metal material, the cylindrical member 24 can be suppressed from being deformed by the repulsive force of the O-ring OR which is compressed and deformed in the gap between the article G and the cylindrical member 24.
According to embodiment 1 as described above, the semiconductor device 10 can achieve the waterproof performance and the detection performance with a simple structure and suppress the deterioration of these performances.
Specifically, in the semiconductor device 10, the electrical connection between the base substrate 12 and the circuit element 14 (the pad 12b, the bonding wire 18, and the 1 st pad 14c) and the electrical connection between the circuit element 14 and the detection element 16 (the 2 nd pad 14d, the bonding wire 20, and the pad 16c) are made waterproof by being embedded in the resin package 22, instead of being embedded in the gel-like sealing resin used in the pressure sensor described in patent document 1.
Compared to the resin package 22 made of a hard resin, a gel-like sealing resin such as fluorine gel or silicone gel is susceptible to repeated deformation or chemical deterioration under the influence of the pressure measurement environment. Therefore, the waterproof performance of the gel sealing resin is more likely to be lowered than that of the resin package 22. In a semiconductor device (pressure sensor) having a gel-like sealing resin, for example, repeated deformation or chemical deterioration may cause cracks to develop, thereby reducing the waterproof performance.
In contrast, the resin package 22 of embodiment 1 is hard (less likely to deform) and less likely to chemically deteriorate than the gel-like sealing resin, and therefore is less likely to have a reduced waterproof performance. Thus, the resin package 22 can maintain the waterproof performance while suppressing the decrease in the waterproof performance with respect to each of the electrical connection between the base substrate 12 and the circuit element 14 and the electrical connection between the circuit element 14 and the detection element 16, as compared with the gel-like sealing resin.
In the case of waterproofing with a gel-like sealing resin such as fluorine gel or silicone gel, the semiconductor device (pressure sensor) needs an internal space for housing the gel-like sealing resin and protecting the gel-like sealing resin from external force or the like. That is, such a semiconductor device requires a complicated structure in order to achieve waterproofing performance with a gel-like sealing resin.
In contrast, in the case of the semiconductor device 10 according to embodiment 1, since the gel-like sealing resin is not required, an internal space for accommodating the gel-like sealing resin is also not required. Therefore, the semiconductor device 10 according to embodiment 1 has a simple structure for achieving and maintaining the waterproof performance.
In the case of the semiconductor device 10 according to embodiment 1, the detection portion 16d of the detection element 16 for detecting pressure is not covered with the gel-like sealing resin. The elastic performance (pressure transmission capability) of the gel-like sealing resin is easily degraded by repeated deformation and chemical deterioration due to the influence of the pressure measurement environment. In a semiconductor device (pressure sensor) having a gel-like sealing resin, for example, cracks are generated by repeated deformation, and the development of cracks is promoted by a pressure acting on the gel-like sealing resin, so that the pressure transmitted to a pressure detection element by the gel-like sealing resin is likely to be reduced. Since the detection portion 16d of the detection element 16 is not covered with such a gel-like sealing resin, it is possible to maintain the detection performance of the detection element 16 while suppressing a decrease in the detection performance of the pressure.
As described above, since the semiconductor device 10 of embodiment 1 does not include the gel-like sealing resin and the constituent elements required for the gel-like sealing resin, it is possible to realize the waterproof performance and the detection performance with a simple structure and suppress the deterioration of these performances.
(embodiment mode 2)
Embodiment 2 is substantially the same as embodiment 1 described above, except that the form of the cylindrical member engaged with the O-ring is different. Therefore, the semiconductor device of embodiment 2 will be described mainly with respect to differences. The same reference numerals are given to the components substantially the same as those of embodiment 1.
Fig. 4 is a perspective view of the semiconductor device according to embodiment 2.
As shown in fig. 4, in the semiconductor device 110 of embodiment 2, the cylindrical member 124 is a cylindrical member and is made of, for example, a metal material. The cylindrical member 124 defines a through hole 124 a. One end of the cylindrical member 124 is attached to the opening surface 22b of the resin package 22. One end of the cylindrical member 124 is attached to the resin package 22 with an adhesive, for example.
An O-ring is fitted to an outer peripheral surface 124b of the cylindrical member 124. The O-ring fitted in the cylindrical member 124 is received by the opening surface 22b of the resin package 22.
In embodiment 2 as well, similarly to embodiment 1 described above, the semiconductor device 110 can achieve waterproof performance and detection performance with a simple structure and suppress a decrease in these performances.
(embodiment mode 3)
Embodiment 3 is substantially the same as embodiment 1 described above, except that the form of the cylindrical member engaged with the O-ring is different. Therefore, the semiconductor device of embodiment 3 will be described mainly with respect to differences. The same reference numerals are given to the components substantially the same as those of embodiment 1.
Fig. 5 is a perspective view of the semiconductor device according to embodiment 3. Fig. 6 is a cross-sectional view of the semiconductor device of embodiment 3.
As shown in fig. 5 and 6, in the semiconductor device 210 of embodiment 3, the cylindrical member 224 is a plate-like member and is made of, for example, a metal material. The plate-like cylindrical member 224 includes a through hole 224 a. The cylindrical member 224 is attached to the opening surface 22b of the resin package 22 with an adhesive, for example.
The cylindrical member 224 includes an annular groove 224c surrounding an outer opening (an opening farther from the resin package 22) provided with the through hole 224a on an outer surface 224b of the outer opening. The outer surface 224b is an end surface of the cylindrical member 224 in the positive Z-axis direction. As shown in fig. 6, the annular groove 224c has a depth that can partially receive the O-ring OR. By housing the O-ring OR in the annular groove 224c, a gap between the article G and the semiconductor device 210 can be sealed even when the article G has a small thickness as shown in fig. 6, that is, even when the article G does not have an inner circumferential surface facing the outer circumferential surface of the cylindrical member 224.
In embodiment 3 as well, similarly to embodiment 1 described above, the semiconductor device 210 can achieve waterproof performance and detection performance with a simple structure and suppress a decrease in these performances.
(embodiment mode 4)
Embodiment 4 is substantially the same as embodiment 1 described above, except that the electrical connection between the base substrate and the circuit element and the electrical connection between the circuit element and the detection element are different in form. Therefore, the semiconductor device of embodiment 4 will be mainly described with respect to the differences. The same reference numerals are given to the components substantially the same as those of embodiment 1.
Fig. 7 is a plan view of the semiconductor device according to embodiment 4. Fig. 7 shows the inside of the resin package. Further, fig. 8A is a sectional view taken along line C-C of fig. 7, and fig. 8B is a sectional view taken along line D-D of fig. 7.
As shown in fig. 7, 8A, and 8B, in the semiconductor device 310 of embodiment 4, the base substrate 312 and the circuit element 314 are electrically connected by a bump 318, and the circuit element 314 and the detection element 316 are electrically connected by a bump 320. As described above, the semiconductor device 310 of embodiment 4 includes bumps 318 and 320 as connection members instead of the bonding wires 18 and 20 of the semiconductor device 10 of embodiment 1. Therefore, the No. 1 pad (not shown) electrically connected to the pad (not shown) provided on the No. 1 surface 312a of the base substrate 312 via the bump 318 is provided on the No. 2 surface 314b of the circuit element 314. Further, a 2 nd land (not shown) electrically connected to a land (not shown) provided on the 2 nd surface 316b of the detection element 316 via a bump 320 is provided on the 1 st surface 314a of the circuit element 314. In embodiment 4, pads are present between the base substrate 312 and the circuit element 314 and between the circuit element 314 and the detection element 316. Therefore, the semiconductor device 310 of embodiment 4 can be smaller in size than the semiconductor device 10 of embodiment 1 including the bonding wires 18 and 20, and can be made smaller in size as a whole by making the base substrate, the circuit element, and the detection element smaller.
In embodiment 4 as well, similarly to embodiment 1 described above, the semiconductor device 310 can achieve waterproof performance and detection performance with a simple structure and suppress a decrease in these performances.
In addition, in embodiment 2 and embodiment 3 described above, as in embodiment 4, the electrical connection between the base substrate and the circuit element and the electrical connection between the circuit element and the detection element may be performed by bumps.
(embodiment 5)
Embodiment 5 is substantially the same as embodiment 1 described above, except that the circuit elements and the detection elements are different in form. Therefore, the semiconductor device according to embodiment 5 will be described mainly with respect to differences. The same reference numerals are given to the components substantially the same as those of embodiment 1.
Fig. 9 is a plan view of the semiconductor device according to embodiment 5. Fig. 9 shows the inside of the resin package. Fig. 10 is a cross-sectional view of the semiconductor device according to embodiment 5.
In the case of embodiment 1 described above, as shown in fig. 2B, the centers of the exposure holes 22a of the resin package 22, the centers of the circuit elements 14, and the centers of the detection elements 16 do not coincide (shift) in plan view.
In contrast, in the case of the semiconductor device 410 according to embodiment 5, the detection element 416 is provided in the circuit element 414 so that the center of the detection element 416 coincides with the center C of the circuit element 414, preferably, the center of the exposure hole 22a of the resin package 22 also coincides with the center C of the circuit element 414 in a plan view. That is, the circuit element 414 and the detection element 416 are respectively configured in such a manner that such a configuration can be realized. Thus, as shown in fig. 10, the centers of the circuit element 414 and the detection element 416 are located on the same straight line (one-dot chain line) orthogonal to the base substrate 12. With such symmetry of arrangement, it is possible to reduce the variation in stress applied to the circuit element 414 and the detection element 416 from the surrounding resin package 22, as compared with the case of the above-described center shift. Since the characteristics of the circuit element 414 and the detection element 416 vary according to the stress, the variation in the characteristics of the circuit element 414 and the detection element 416 can be reduced by reducing the variation in the stress.
In embodiment 5 as well, similarly to embodiment 1 described above, the semiconductor device 410 can achieve waterproof performance and detection performance with a simple structure and suppress a decrease in these performances.
In embodiments 2 and 3 described above, the center of the circuit element may be aligned with the center of the detection element in a plan view, as in embodiment 5.
(embodiment mode 6)
Embodiment 6 is substantially the same as embodiment 1 described above, except that the base substrate, the circuit substrate, and the detection element are electrically connected to each other. Therefore, the semiconductor device according to embodiment 6 will be described mainly with respect to differences. The same reference numerals are given to the components substantially the same as those of embodiment 1.
Fig. 11 is a plan view of the semiconductor device according to embodiment 6. In addition, fig. 11 shows the inside of the resin package. Fig. 12 is a cross-sectional view of the semiconductor device according to embodiment 6.
In the case of embodiment 1 described above, as shown in fig. 2B, the circuit element 14 is electrically connected to the base substrate 12 and the detection element 16 is electrically connected to the circuit element 14.
Unlike embodiment 1 described above, in the case of the semiconductor device 510 according to embodiment 6, the detection element 516 is electrically connected to the base substrate 512 without the circuit element 514. Specifically, the base substrate 512 is provided with a plurality of circuit element pads 512b electrically connected to a plurality of pads 514c of the circuit element 514 via bonding wires 518, and a plurality of detection element pads 512c electrically connected to a plurality of pads 516c of the detection element 516 via bonding wires 520. The circuit element 514 and the detection element 516 are electrically connected to each other by a conductor pattern or the like provided on the base substrate 512. In addition, bumps may be used to electrically connect the base substrate 512 and the circuit element 514 instead of the bonding wires 518.
The present invention has been described above by referring to the embodiments, but the embodiments of the present invention are not limited to these embodiments.
For example, in the case of embodiment 4 described above, as shown in fig. 8A and 8B, the electrical connection between the base substrate 312 and the circuit element 314 and the electrical connection between the circuit element 314 and the detection element 316 are performed by bumps. Alternatively, any electrical connection may be made via a bonding wire. Further, the detection element may be electrically connected to the base substrate via a bonding wire or a bump.
In the case of the semiconductor device 10 according to embodiment 1 described above, the detection element 16 is provided on the base substrate 12 with the circuit element 14 interposed therebetween, as shown in fig. 3A. However, the embodiments of the present invention are not limited to this.
(embodiment 7)
Fig. 13 is a cross-sectional view of a semiconductor device according to embodiment 7 of the present invention.
As shown in fig. 13, in the semiconductor device 610 of embodiment 7, the detection element 616 is not provided on the base substrate 612 with the circuit element 614 interposed therebetween. Instead, the detecting element 616 is directly provided on the base substrate 612 as with the circuit element 614. That is, the detection element 616 and the circuit element 614 are provided on the base substrate 612 in a state of being arranged parallel to the base substrate 612. Further, the detection element 616 and the circuit element 614 are electrically connected to the base substrate 612 by bumps 618 and 620. The electrical connection between the detection element 616 and the circuit element 614 is made by a conductor pattern or the like provided on the base substrate 612. By providing the detection element 616 directly on the base substrate 612 in this manner, the semiconductor device 610 can be made lower in height (can be made smaller in dimension in the Z-axis direction) than when provided on the base substrate 612 with the circuit element 614 interposed therebetween. At least one of the detection element 616 and the circuit element 614 may be electrically connected to the base substrate 612 not via a bump but via a bonding wire.
In embodiment 1 described above, the detection element 16 and the circuit element 14 that processes the output signal of the detection element 16 are separate components, but the embodiment of the present invention is not limited to this.
(embodiment mode 8)
Fig. 14 is a cross-sectional view of a semiconductor device according to embodiment 8 of the present invention.
As shown in fig. 14, in the semiconductor device 710 according to embodiment 8, the detection element 716 corresponds to a structure in which the detection element and the circuit element according to the above-described embodiments are integrated into one component. That is, the circuit element is incorporated in the detection element.
For example, the detection element 716 is a single chip incorporating a detection circuit portion (corresponding to the detection element 16 of embodiment 1) 716e including a detection portion 716d and a signal processing circuit portion (corresponding to the circuit element 14 of embodiment 1) 716f that processes a signal output from the detection function portion 716e and outputs the processed signal to the outside. The signal processing circuit portion 716f of the detection element 716 is electrically connected to the base substrate 712 by a bonding wire 718. The detection element 716 can be provided on the base substrate 712 by a single process (in the case of embodiment 1 described above, two processes of providing the circuit element 14 on the base substrate 12 and providing the detection element 16 on the circuit element 14 are required). In addition, instead of the bonding wires 718, the detection element 716 may be electrically connected to the base substrate 712 by a bump.
The signal processing circuit for processing the output signal of the detection element may be provided in another device outside the base substrate or the semiconductor device, and not in the circuit element.
(embodiment mode 9)
Fig. 15 is a cross-sectional view of a semiconductor device according to embodiment 9 of the present invention.
As shown in fig. 15, in the semiconductor device 810 according to embodiment 9, a signal processing circuit for processing an output signal of the detection element 816 is provided on the base substrate 812. For example, the signal processing circuit is provided in a portion of the 1 st surface 812a of the base substrate 812 covered with the resin package 22. In this case, the circuit elements of the above-described embodiments are not required.
In the case where a signal processing circuit for processing an output signal of the detection element is provided outside the semiconductor device, the signal processing circuit is provided in an electronic apparatus provided with the semiconductor device. For example, a substrate of an electronic device connected to an external connection terminal of a base substrate of a semiconductor device is provided with a signal processing circuit for processing an output signal of a detection element.
(embodiment mode 10)
In embodiment 6 described above, as shown in fig. 12, the size of the detection element 516 is different from the size of the circuit element 514, and the detection element 516 is mounted on the circuit element 514. The detection element 516 is electrically connected to the base substrate 512 not via the circuit element 514 but via a bonding wire 520. However, the embodiments of the present invention are not limited to this.
Fig. 16 is a cross-sectional view of a semiconductor device according to embodiment 10 of the present invention.
In the semiconductor device 910 according to embodiment 10, the detection element 916 is mounted on the circuit element 914. Further, the size of the detection element 916 and the size of the circuit element 914 are substantially the same when viewed in the opposing direction (Z-axis direction) of the detection element 916 and the circuit element 914.
The detecting element 916 is electrically connected to the base substrate 912 not via the circuit element 914 but via a bonding wire 920. The bonding wire 920 and a pad (a portion near the pad on the 1 st surface 916 a) of the detection element 916 connected to the bonding wire 920 are embedded in the resin package 22.
Since the circuit element 914 carries the detection element 916 having substantially the same size as the circuit element, the circuit element 914 is electrically connected to the base substrate 912 not by a bonding wire but by a bump 918.
In embodiment 10, the circuit element 914 and the detection element 916 may be electrically connected to each other by a bump.
(embodiment mode 11)
In embodiment 1 described above, as shown in fig. 2B and 3A, part of the 1 st surface 16a of the detection element 16 is covered with the resin package 22. Thus, the plurality of pads 16c provided on the 1 st surface 16a are covered and protected by the resin package 22. However, the embodiments of the present invention are not limited to this.
Fig. 17 is a cross-sectional view of a semiconductor device according to embodiment 11 of the present invention.
As shown in fig. 17, when the detection element 1016 and the circuit element 1014 are miniaturized, and when the size of the detection element 1016 and the size of the circuit element 1014 are substantially the same when viewed in the direction (Z-axis direction) in which the detection element 1016 and the circuit element 1014 face each other, the detection element 1016 is embedded in the resin package 22 on the premise that the entire 1 st surface 1016a is not covered with the resin package 22. In this case, the detection unit 1016d is present over substantially the entire range of the 1 st surface 1016a of the detection element 1016. That is, the 1 st surface 1016a of the detection element 1016 is not provided with a conductor pattern which is to be covered and protected by the resin package 22 such as a plurality of pads.
Further, the detection element 1016 is electrically connected to the base substrate 1012 through the circuit element 1014. Therefore, the detection element 1016 is electrically connected to the circuit element 1014 via the bump 1020. Further, since the circuit element 1014 is mounted with the detection element 1016 having substantially the same size, the circuit element 1014 is electrically connected to the base substrate 1012 not by a bonding wire but by a bump 1018.
In the case of embodiment 11, the cost of the semiconductor device 1010 can be reduced because the detection element 1016 and the circuit board 1014 are downsized.
In the case of embodiment 1 described above, the semiconductor device 10 is a so-called pressure sensor that measures pressure. However, the embodiments of the present invention are not limited to this. For example, the semiconductor device according to the embodiment of the present invention may be a sensor for detecting (measuring) light, ultrasonic waves, a specific gas (gas), or the like, or may be a microphone. That is, the semiconductor device according to the embodiment of the present invention includes a detection element that allows the detection portion to detect the detection target by exposing the detection portion to the outside of the semiconductor device. For example, when the semiconductor device is an optical sensor that detects light, a photodiode is provided as a detection element. For example, when the semiconductor device is an ultrasonic sensor for detecting ultrasonic waves, an ultrasonic transducer is provided as a detection element.
While the present invention has been described above with reference to a plurality of embodiments, it will be apparent to those skilled in the art that a single embodiment can be combined with at least one other embodiment in whole or in part to constitute yet another embodiment of the present invention.
Industrial applicability
The utility model discloses can be applied to the semiconductor device of waterproof type.
Description of the reference numerals
10. A semiconductor device; 12. a base substrate; 14. a circuit element; 16. a detection element; 16d, a detection unit; 18. a 2 nd connecting member; 20. 1 st connecting member; 22. a resin package; 22a, an exposure hole; 24. a cylindrical member; 24a, through holes.
Claims (13)
1. A semiconductor device is characterized in that a semiconductor element,
the semiconductor device includes:
a base substrate;
a detection element provided on the base substrate and including a detection unit;
a 1 st connecting member electrically connecting the base substrate and the detection element;
a resin package provided on the base substrate, having the detection element and the 1 st connection member embedded therein, and having an exposure hole for exposing a detection portion of the detection element to the outside; and
and a cylindrical member attached to the resin package and having a through hole communicating with the exposure hole.
2. The semiconductor device according to claim 1,
the cylindrical member includes a cylindrical portion and a flange portion connected to one end of the cylindrical portion and attached to the resin package.
3. The semiconductor device according to claim 1,
the cylindrical member is a cylindrical member having one end attached to the resin package.
4. The semiconductor device according to claim 1,
the cylindrical member includes an annular groove surrounding an outer side opening portion of the through hole on an outer surface of the outer side opening portion.
5. The semiconductor device according to any one of claims 1 to 4,
the semiconductor device further includes:
a circuit element provided on the base substrate; and
a 2 nd connecting member electrically connecting the base substrate and the circuit element,
the circuit element and the 2 nd connecting member are embedded in the resin package.
6. The semiconductor device according to claim 5,
the detection element is provided on the base substrate with the circuit element interposed therebetween.
7. The semiconductor device according to claim 6,
the 1 st connecting member is electrically connected to the base substrate via the circuit element and the 2 nd connecting member.
8. The semiconductor device according to claim 6,
the center of the circuit element and the center of the detection element coincide with each other in a plan view.
9. The semiconductor device according to any one of claims 1 to 4,
the semiconductor device further has a circuit element incorporated in the detection element.
10. The semiconductor device according to any one of claims 1 to 4,
the base substrate includes a signal processing circuit that processes an output signal of the detection element.
11. The semiconductor device according to any one of claims 1 to 4,
the connection member is a bonding wire or a bump.
12. The semiconductor device according to any one of claims 1 to 4,
the detection element is a pressure sensor that detects a change in pressure.
13. An electronic device, characterized in that,
the electronic device includes:
the semiconductor device according to any one of claims 1 to 12;
an O-ring engaged with the cylindrical member of the semiconductor device; and
a housing mounting the semiconductor device and the O-ring.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018084400 | 2018-04-25 | ||
| JP2018-084400 | 2018-04-25 | ||
| JP2018183720 | 2018-09-28 | ||
| JP2018-183720 | 2018-09-28 | ||
| PCT/JP2019/014665 WO2019208127A1 (en) | 2018-04-25 | 2019-04-02 | Semiconductor device and electronic apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213180487U true CN213180487U (en) | 2021-05-11 |
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| CN201990000645.1U Active CN213180487U (en) | 2018-04-25 | 2019-04-02 | Semiconductor device and electronic apparatus |
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| CN (1) | CN213180487U (en) |
| WO (1) | WO2019208127A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022137702A1 (en) * | 2020-12-23 | 2022-06-30 | 株式会社村田製作所 | Semiconductor device and electronic device |
| WO2024257532A1 (en) * | 2023-06-14 | 2024-12-19 | 株式会社村田製作所 | Pressure sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2224218B1 (en) * | 2009-02-25 | 2018-11-28 | Sensirion Automotive Solutions AG | A sensor in a moulded package and a method for manufacturing the same |
| US9134193B2 (en) * | 2013-12-06 | 2015-09-15 | Freescale Semiconductor, Inc. | Stacked die sensor package |
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2019
- 2019-04-02 CN CN201990000645.1U patent/CN213180487U/en active Active
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| WO2019208127A1 (en) | 2019-10-31 |
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