CN212009207U - Polarization mode converter - Google Patents
Polarization mode converter Download PDFInfo
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- CN212009207U CN212009207U CN202020614702.XU CN202020614702U CN212009207U CN 212009207 U CN212009207 U CN 212009207U CN 202020614702 U CN202020614702 U CN 202020614702U CN 212009207 U CN212009207 U CN 212009207U
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- 230000010287 polarization Effects 0.000 title claims abstract description 98
- 230000003287 optical effect Effects 0.000 claims abstract description 106
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 66
- 239000013078 crystal Substances 0.000 claims abstract description 40
- 239000013307 optical fiber Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 30
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 11
- 239000011701 zinc Substances 0.000 claims abstract description 11
- 239000011787 zinc oxide Substances 0.000 claims abstract description 11
- 239000000835 fiber Substances 0.000 claims description 33
- 230000000694 effects Effects 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 4
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 claims description 3
- BIVGQKYDVGQFBW-UHFFFAOYSA-N chromium gold platinum Chemical compound [Cr][Pt][Au] BIVGQKYDVGQFBW-UHFFFAOYSA-N 0.000 claims description 3
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 claims description 3
- ZNKMCMOJCDFGFT-UHFFFAOYSA-N gold titanium Chemical compound [Ti].[Au] ZNKMCMOJCDFGFT-UHFFFAOYSA-N 0.000 claims description 3
- 229910001258 titanium gold Inorganic materials 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
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- 235000012431 wafers Nutrition 0.000 description 33
- 239000010408 film Substances 0.000 description 21
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
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- 229910052737 gold Inorganic materials 0.000 description 6
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000960 laser cooling Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052755 nonmetal Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The application relates to a polarization mode converter, which comprises a substrate wafer, an optical waveguide, a metal electrode, a buffer layer film, an optical fiber crystal carrier block and a polarization maintaining optical fiber; the optical waveguide is formed on the surface of the substrate wafer and is a zinc diffusion optical waveguide or a zinc oxide diffusion optical waveguide; the metal electrode is arranged above the optical waveguide; the buffer layer film is arranged between the substrate wafer and the metal electrode; the polarization-maintaining optical fiber is placed in the optical fiber crystal carrier block and is in coupling connection with the optical waveguide through the optical fiber crystal carrier block, the technical problem that a polarization mode converter in the prior art is difficult to be applied to the technical problem in the field of high laser light power is solved, a higher light damage threshold is achieved, the polarization-maintaining optical fiber is more suitable for being applied to an optical path system with high laser light power and an optical path system from near infrared to visible light wave bands, the polarization-related loss of the optical waveguide is lower, and the extinction ratio or the contrast ratio of interference light formed by orthogonal polarization light waves is higher.
Description
Technical Field
The application relates to the technical field of quantum optics and quantum communication, in particular to a polarization mode converter.
Background
At present, a polarization mode converter based on the linear electro-optic effect of an electro-optic crystal has very high conversion speed (10 ns-100 ns), and has very wide application in an optical fiber communication system, an optical fiber sensing system and a quantum technology based on an optical fiber technology. The near infrared to visible light band (for example, 600 to 1100nm) is a light wave band widely used in the fields of quantum information storage, laser cooling and capture, quantum frequency standard, quantum secret communication and the like, so that the optical fiber polarization converter capable of working in the band plays an important role in polarization control of an optical path system.
However, in the prior art, polarization mode converters typically employ an optical waveguide-based phase modulator fabricated on a lithium niobate crystal to achieve phase retardation between orthogonal polarization modes. The preparation technology of the lithium niobate crystal optical waveguide at present mainly comprises titanium diffusion and proton exchange, wherein the proton exchange optical waveguide can only transmit one polarization mode and thus cannot support the functions of orthogonal polarization state optical wave simultaneous transmission and phase delay control. The titanium diffusion optical waveguide can support the simultaneous transmission of light waves in an orthogonal polarization mode, and is also an optical waveguide adopted by the existing lithium niobate polarization mode converter. However, the polarization mode converter using the titanium-diffused optical waveguide is difficult to be applied to a field where the laser light power is high because of its low optical damage threshold (generally not more than 100 mW).
The applicant has found that the prior art has at least the following technical problems:
1. the titanium diffusion optical waveguide formed by titanium diffusion has low optical damage threshold and high polarization-dependent loss, so that the existing polarization mode converter is difficult to be applied to the field with higher laser optical power;
2. the proton exchange optical waveguide formed by adopting proton exchange can only transmit one polarization mode and cannot support the function of simultaneously transmitting orthogonal polarization state optical waves.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem that the existing polarization mode converter is difficult to be applied to the field with high laser light power or at least partially solve the technical problem, the application provides a polarization mode converter.
In a first aspect, the present application provides a polarization mode converter, comprising: the device comprises a substrate wafer, an optical waveguide, a metal electrode, a buffer layer film, an optical fiber crystal carrier block and a polarization maintaining optical fiber;
the optical waveguide is formed on the surface of the substrate wafer and is a zinc diffusion optical waveguide or a zinc oxide diffusion optical waveguide;
the metal electrode is placed above the optical waveguide;
the buffer layer film is arranged between the substrate wafer and the metal electrode;
the polarization maintaining optical fiber is coupled with the optical waveguide.
Optionally, a slow axis direction of the polarization maintaining fiber and an optical axis of the substrate wafer form an on-axis angle of 45 °.
Optionally, the width of the strip-shaped metal zinc film or the strip-shaped zinc oxide film forming the optical waveguide is 1-20 μm, and the thickness of the film is 10-300 nm.
Optionally, the optical waveguide is in a straight-bar shape, and the input port and the output port of the optical waveguide are respectively coupled to one polarization maintaining fiber via one optical fiber crystal carrier block.
Optionally, an optical fiber placing port for placing the polarization maintaining optical fiber is arranged on the optical fiber crystal carrier block, and ultraviolet glue is filled between each polarization maintaining optical fiber and the optical fiber placing port and is fully cured by ultraviolet light exposure.
Optionally, the metal electrode is formed in a lumped structure or a coplanar traveling wave structure.
Optionally, for the lumped electrode structure, the metal electrode includes a first electrode branch and a second electrode branch, and the first electrode branch and the second electrode branch are respectively disposed on left and right sides above the optical waveguide.
Optionally, for the coplanar traveling wave structure, the metal electrode includes a signal electrode disposed above the optical waveguide and ground electrodes disposed on left and right sides of the signal electrode, respectively.
Optionally, the metal electrode includes a chromium-gold double-layer metal or a titanium-gold double-layer metal or a chromium-platinum-gold multilayer metal or a titanium-platinum-gold multilayer metal.
Optionally, the substrate wafer is an optical crystal with a linear electro-optic effect.
Compared with the prior art, the technical scheme provided by the embodiment of the application has the following advantages: the embodiment of the application provides a polarization mode converter, adopts zinc diffusion or zinc oxide diffusion optical waveguide as the guided wave structure of light wave, can support the simultaneous transmission of the light wave of orthogonal polarization mode and have higher optical damage threshold, more is fit for being applied to the optical path system that laser optical power is high and the optical path system of near-infrared to visible light wave band. In addition, in the optical waveguide formed by adopting zinc diffusion or zinc oxide diffusion, the difference of the light wave mode distribution of the TE polarization mode and the TM polarization mode is smaller, so that the polarization-dependent loss of the optical waveguide is lower, and the extinction ratio or the contrast of interference light formed by orthogonally polarized light waves is higher.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.
Fig. 1 is a schematic structural diagram of a polarization mode converter according to an embodiment of the present disclosure;
FIG. 2A is a schematic cross-sectional view of a polarization mode converter with a buffer layer film disposed only over an optical waveguide according to an embodiment of the present disclosure;
FIG. 2B is a schematic cross-sectional view of a polarization mode converter with a buffer layer of thin film metal disposed between a metal electrode and a substrate wafer according to an embodiment of the present disclosure;
FIG. 2C is a schematic cross-sectional view of a polarization mode converter with a buffer layer film disposed on the entire surface of the substrate wafer according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram of a metal electrode structure using a lumped electrode structure according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a polarization mode converter employing a lumped electrode structure according to an embodiment of the present application;
fig. 5 is a top view of a metal electrode adopting a traveling wave electrode structure according to an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of a polarization mode converter employing a traveling wave electrode structure according to an embodiment of the present disclosure.
Icon:
1. a base wafer; 2. an optical waveguide; 3. a metal electrode; 31. a first electrode branch; 32. a second electrode branch; 33. a signal electrode; 34. a ground electrode; 4. a buffer layer film; 5. a polarization maintaining optical fiber; 6. and the optical fiber crystal carrier block.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
At present, a polarization mode converter based on the linear electro-optic effect of an electro-optic crystal has very high conversion speed (10 ns-100 ns), and has very wide application in an optical fiber communication system, an optical fiber sensing system and a quantum technology based on an optical fiber technology. The near infrared to visible light band (for example, 600 to 1100nm) is a light wave band widely used in the fields of quantum information storage, laser cooling and capture, quantum frequency standard, quantum secret communication and the like, so that the optical fiber polarization converter capable of working in the band plays an important role in polarization control of an optical path system.
However, in the prior art, polarization mode converters typically employ an optical waveguide-based phase modulator fabricated on a lithium niobate crystal to achieve phase retardation between orthogonal polarization modes. The preparation technology of the lithium niobate crystal optical waveguide at present mainly comprises titanium diffusion and proton exchange, wherein the proton exchange optical waveguide can only transmit one polarization mode and cannot support the function of simultaneously transmitting orthogonal polarization state optical waves. The titanium diffusion optical waveguide can support the simultaneous transmission of light waves in an orthogonal polarization mode, and is also an optical waveguide adopted by the existing lithium niobate polarization mode converter. However, the polarization mode converter adopting the titanium diffused optical waveguide is difficult to be applied to the field with high laser light power due to the low light damage threshold (generally not exceeding 100mW), and based on this, the embodiment of the present application provides a polarization mode converter, which can support the simultaneous transmission of light waves in orthogonal polarization modes and has a higher light damage threshold, and is more suitable for being applied to optical path systems with high laser light power and optical path systems from near infrared to visible light bands.
For ease of understanding, the following describes a polarization mode converter provided in the embodiments of the present application in detail, referring to fig. 1, the polarization mode converter may include a substrate wafer 1, an optical waveguide 2, a metal electrode 3, a buffer layer film 4, and a polarization maintaining fiber 5;
the optical waveguide 2 is formed on the surface of the substrate wafer 1, and the optical waveguide 2 is a zinc diffusion optical waveguide or a zinc oxide diffusion optical waveguide;
the metal electrode 3 is arranged above the optical waveguide 2;
the buffer layer film 4 is arranged between the substrate wafer 1 and the metal electrode 3;
the polarization maintaining fiber 5 is coupled with the optical waveguide 2.
Here, in some embodiments of the present application, the base wafer 1 may be an optical crystal having a linear electro-optical effect, and may be an optical-grade crystal having a single crystal quality, such as one of lithium niobate, magnesium-doped or magnesium oxide-doped lithium niobate, lithium tantalate, potassium titanyl phosphate, and other crystal materials having a linear electro-optical effect. Here, as an example, the thickness of the base wafer 1 may be 0.1mm to 2.0 mm. Here, as a preferred embodiment, the substrate wafer 1 may be made of lithium niobate crystal material, and the wafer thickness thereof may be 1.0mm to obtain a sufficient coupling bonding area and bonding strength between the substrate wafer 1 and the fiber crystal carrier block 5. Here, as another example, to reduce back reflection at the end face of the optical waveguide 2, the base wafer 1 may be polished at an inclination angle, such as 0 ° to 15 °, where, as a preferred embodiment, the base wafer 1 may be polished at an inclination angle of 5 ° to 11 °. Here, in some embodiments of the present application, the buffer layer film 4 is disposed between the substrate wafer 1 and the metal electrode 3 to prevent the metal electrode 3 from absorbing light energy transmitted in the optical waveguide 2 during the electro-optical modulation process, and avoid loss during the optical wave transmission process.
In some embodiments of the present application, the slow axis direction of the polarization maintaining fiber 5 and the optical axis of the substrate wafer 1 form an angle of 45 ° with respect to the axis, so that the light wave transmitted in the polarization maintaining fiber 5 can be decomposed into two orthogonal polarization states, respectively coupled with the TE polarization mode or the TM polarization mode in the optical waveguide 2 and transmitted in the optical waveguide 2, and after a suitable phase retardation is formed by the electro-optical modulation effect of the metal electrode, the 90 ° polarization direction deflection is realized at the output end of the optical waveguide 2 and coupled into the fast axis or the slow axis of the polarization maintaining fiber 5.
In some embodiments of the present application, the strip-shaped metallic zinc film or strip-shaped zinc oxide film forming the optical waveguide 2 has a width of 1 μm to 20 μm and a film thickness of 10nm to 300 nm.
In some embodiments of the present application, the metal electrode 3 comprises a chromium-gold bilayer metal or a titanium-gold bilayer metal or a chromium-platinum-gold multilayer metal or a titanium-platinum-gold multilayer metal.
Here, the metal electrode 3 is disposed above the optical waveguide 2 for performing phase modulation and phase retardation control on the optical wave transmitted in the optical waveguide 2, where the metal electrode 3 may be a gold thin film, where a metal layer for improving stability of the metal electrode 3 may be further disposed between the gold thin film and the substrate wafer in order to improve adhesion between the metal electrode 3 and the substrate wafer, where the metal electrode 3 may be a double-layer metal structure formed by further disposing a chromium metal thin film or a titanium metal thin film below a surface of the gold thin film facing the substrate wafer, or a multi-layer metal structure formed by sequentially disposing a platinum metal thin film and a chromium metal thin film below a surface of the gold thin film facing the substrate wafer, or a multi-layer metal structure formed by sequentially disposing a platinum metal thin film and a titanium metal thin film below a surface of the gold thin film facing the substrate wafer. Here, as an example, the thickness of the chromium metal thin film or the titanium metal thin film in the metal electrode 3 may be 10nm to 200nm, and the thickness of the gold thin film may be 0.3 μm to 50 μm.
Here, in some embodiments of the present application, the buffer layer thin film 4 may be one of non-metal material thin films of silicon oxide, aluminum oxide, magnesium oxide, etc., and may have a thickness of 10nm to 500 nm. The buffer layer film 4 can be placed in one or a combination of the following ways:
referring to fig. 2A, the first placement method: the buffer layer film 4 is only arranged right above the optical waveguide 2 to separate the metal electrode 3 positioned right above the optical waveguide 2;
referring to fig. 2B, the second placement method: a buffer layer film 4 is arranged between the metal electrode 3 and the substrate wafer 1; the buffer layer film 4 is provided only where the base wafer 1 is in contact with the metal electrode 3, and the buffer layer film 4 is not provided where the metal electrode 3 is not provided on the base wafer 1.
Referring to fig. 2C, the placement method is three: a buffer layer film 4 is integrally provided on the surface of the base wafer 1 where the optical waveguide 2 is located, and the buffer layer film 4 is laid over the surface of the base wafer 1 where the optical waveguide 2 is located.
In some embodiments of the present application, the optical waveguide 2 may be a straight strip, and the input port and the output port of the optical waveguide 2 are respectively coupled to a polarization maintaining fiber 5 via a fiber crystal carrier 6.
Here, in some embodiments of the present application, the fiber crystal carrier 6 is provided with a fiber placing opening for placing the polarization maintaining fiber 5, and ultraviolet glue is filled between each polarization maintaining fiber 5 and the fiber placing opening and is sufficiently cured by exposure using ultraviolet light.
The fiber crystal carrier 6 is mainly used for placing the polarization maintaining fiber 5 and increasing the bonding area and bonding strength when the polarization maintaining fiber 5 is coupled. The optical fiber crystal carrier 6 may be a square or rectangular crystal with a V-shaped, square, or semicircular optical fiber placement opening pre-formed on the surface, or a circular crystal or D-shaped crystal with a circular hole-shaped optical fiber placement opening formed in the center, and is mainly used for placing the polarization maintaining optical fiber 5 and increasing the bonding area and bonding strength when the polarization maintaining optical fiber 5 is coupled.
Here, in some specific embodiments of the present application, the optical fiber crystal carrier block 6 may be made of a crystal material such as lithium niobate, lithium tantalate, quartz, glass, silicon, etc., which is not particularly limited herein, and as a preferred embodiment, the optical fiber crystal carrier block 6 may be made of a lithium niobate crystal material. Here, in order to obtain the best coupling efficiency with the optical waveguide 2, the fiber crystal carrier block 6 may be polished at a certain inclination angle accordingly, and as one preferable, the fiber crystal carrier block 6 may be polished at an inclination angle of 7 ° to 16 °.
Here, the polarization maintaining fiber 5 can be placed in the fiber placing opening of the fiber crystal carrier 6, and the gap between the polarization maintaining fiber 5 and the fiber placing opening is filled with ultraviolet glue and is exposed by ultraviolet light to be fully cured, and is coupled and bonded with the optical waveguide 2 after being polished.
The metal electrodes 3 may be formed differently for different crystal tangential direction substrate wafers 1, and in some embodiments of the present application, the metal electrodes 3 may be formed in a lumped structure or a coplanar traveling wave structure.
As an example, for the substrate wafer 1 with the crystal tangential direction being X-cut or Y-cut, the metal electrode 3 may adopt a lumped structure;
for the substrate wafer 1 with the crystal tangential direction being Z-cut, the metal electrode 3 adopts a coplanar traveling wave type structure.
In some embodiments of the present application, referring to fig. 3, for the lumped electrode structure, the metal electrode 3 may include a first electrode branch 31 and a second electrode branch 32, and the first electrode branch 31 and the second electrode branch 32 are respectively disposed at left and right sides above the optical waveguide 2.
Here, for the lumped electrode structure, the first and second electrode branches 31 and 32 may be symmetrically placed on the left and right sides above the optical waveguide 2; the structure of the polarization mode converter employing the lumped electrode structure can be seen in fig. 4.
In some embodiments of the present application, referring to fig. 5, for the coplanar traveling wave structure, the metal electrode 3 includes a signal electrode 33 disposed above the optical waveguide 2 and ground electrodes 34 disposed on left and right sides of the signal electrode 33, respectively.
Here, for the coplanar traveling wave type structure, the metal electrode 3 may be composed of a signal electrode 33 and ground electrodes 34 disposed at left and right sides thereof, wherein the signal electrode 33 may be disposed directly above the optical waveguide 2, and the ground electrodes 34 may be disposed symmetrically at both sides of the signal electrode 33. Here, the structure of the polarization mode converter employing the coplanar traveling wave type structure can be seen in fig. 6.
The embodiment of the application provides a polarization mode converter, adopts zinc diffusion or zinc oxide diffusion optical waveguide 2 as the guided wave structure of light wave, can support the simultaneous transmission of the light wave of orthogonal polarization mode and have higher optical damage threshold, and is more suitable for being applied to the optical path system with high laser optical power and the optical path system from near infrared to visible light wave band. In addition, in the optical waveguide 2 formed by using zinc diffusion or zinc oxide diffusion, the difference of the light wave mode distribution of the TE polarization mode and the TM polarization mode is smaller, so the polarization dependent loss of the optical waveguide 2 is lower, and the extinction ratio or contrast of the interference light formed by the orthogonally polarized light waves is higher.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The above description is only exemplary of the invention, and is intended to enable those skilled in the art to understand and implement the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A polarization mode converter, comprising: the device comprises a substrate wafer, an optical waveguide, a metal electrode, a buffer layer film and a polarization maintaining optical fiber;
the optical waveguide is formed on the surface of the substrate wafer and is a zinc diffusion optical waveguide or a zinc oxide diffusion optical waveguide;
the metal electrode is placed above the optical waveguide;
the buffer layer film is arranged between the substrate wafer and the metal electrode;
the polarization maintaining optical fiber is coupled with the optical waveguide.
2. The polarization mode converter of claim 1, wherein the slow axis direction of the polarization maintaining fiber is at a 45 ° to axis angle from the optical axis of the base wafer.
3. The polarization mode converter according to claim 1, wherein the optical waveguide is a straight strip, and the input port and the output port of the optical waveguide are coupled to one polarization maintaining fiber via one fiber crystal carrier respectively.
4. The polarization mode converter according to claim 3, wherein the strip-shaped metallic zinc film or strip-shaped zinc oxide film forming the optical waveguide has a width of 1 μm to 20 μm and a film thickness of 10nm to 300 nm.
5. The polarization mode converter according to claim 4, wherein the fiber crystal carrier has a fiber placement opening for placing the polarization maintaining fiber, and an ultraviolet glue is filled between each polarization maintaining fiber and the fiber placement opening and is fully cured by exposure of ultraviolet light.
6. The polarization mode converter according to claim 1, wherein said metal electrodes are formed in a lumped structure or a coplanar traveling wave structure.
7. The polarization mode converter of claim 6, wherein for the lumped electrode structure, the metal electrode comprises a first electrode branch and a second electrode branch, and the first electrode branch and the second electrode branch are respectively placed on the left and right sides above the optical waveguide.
8. The polarization mode converter according to claim 6, wherein for the coplanar traveling wave structure, the metal electrodes comprise a signal electrode disposed above the optical waveguide and ground electrodes disposed on left and right sides of the signal electrode, respectively.
9. The polarization mode converter of claim 1, wherein said metal electrode comprises a chromium-gold bilayer metal or a titanium-gold bilayer metal or a chromium-platinum-gold multilayer metal or a titanium-platinum-gold multilayer metal.
10. A polarization mode converter according to claim 1, wherein said substrate wafer is an optical crystal with linear electro-optic effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020614702.XU CN212009207U (en) | 2020-04-22 | 2020-04-22 | Polarization mode converter |
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| CN202020614702.XU CN212009207U (en) | 2020-04-22 | 2020-04-22 | Polarization mode converter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI767620B (en) * | 2021-03-19 | 2022-06-11 | 極星光電股份有限公司 | Electro-optical intensity modulation devices, wafers and systems |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI767620B (en) * | 2021-03-19 | 2022-06-11 | 極星光電股份有限公司 | Electro-optical intensity modulation devices, wafers and systems |
| US11754864B2 (en) | 2021-03-19 | 2023-09-12 | Polaris Photonics Limited | Electro-optical intensity modulation apparatus, chip and system |
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