CN211980629U - Semiconductor device and photodetection system - Google Patents
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- CN211980629U CN211980629U CN202020944173.XU CN202020944173U CN211980629U CN 211980629 U CN211980629 U CN 211980629U CN 202020944173 U CN202020944173 U CN 202020944173U CN 211980629 U CN211980629 U CN 211980629U
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Abstract
The utility model discloses a semiconductor device and photoelectric detection system, this semiconductor device can include: an epitaxial layer which comprises a first part and a second part which are of a first conductivity type, wherein a first doped region, a second doped region and a third doped region which are of a second conductivity type opposite to the first conductivity type are formed on one side of the first part far away from the second part, the second doped region is located between the first doped region and the third doped region, the doping concentrations of the second part, the first doped region, the second doped region and the third doped region are all larger than that of the first part, and an output end of the semiconductor device is formed by the first doped region; and a passivation layer over one side of the first portion and having a reflective region formed therein corresponding to the first doped region. Through utilizing the utility model provides a technical scheme can improve the detection efficiency to the longer photon of wavelength.
Description
Technical Field
The utility model relates to the field of semiconductor technology, in particular to semiconductor device and photoelectric detection system.
Background
The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.
The low-flux photon detection technique is one that can detect lower luminous flux densities (e.g., 10)-19～10-6W/mm2) The technology for photon detection of optical signals of (a) can be applied to many fields, for example, medical imaging (particularly, Positron Emission Tomography (PET)), homeland security, high-energy physical experiments, and other imaging key fields.
In the field of low-flux photon detection technology, Silicon photomultipliers (sipms for short) have received great attention in recent years due to their advantages of high detection efficiency, excellent single photon response and resolution capability, small volume, easy integration, low working voltage, no magnetic field interference, good reliability, low cost, and the like. The cross-sectional structure of a conventional silicon photomultiplier is shown in fig. 1, and mainly includes: the semiconductor device comprises a P-type substrate or an epitaxial layer, a plurality of N Wells (NWELLs) and P + type doped regions, wherein Deep N Wells (DNW) are formed on the P-type substrate or the epitaxial layer, a plurality of N Wells (NWELL) are formed in the middle of the DNW, the P + type doped regions are formed above the NWELL and are separated by Shallow Trench Isolation (STI), and the NWELL and the N + type doped regions are formed at the edge of the DNW; and a substrate electrode composed of a P-well (PWELL) and a P + -type doped region formed outside the P-type substrate/epitaxial layer. When the SiPM is in a working state, the reverse bias voltage of the P +/NWELL junction is larger than the breakdown voltage of the P +/NWELL junction, so that a depletion region is formed, when photons are incident from the top, photogenerated carriers are mainly absorbed and formed in the depletion region, the avalanche breakdown effect of a high electric field region in the depletion region is triggered, and the high electric field region is quenched by an external quenching resistor, so that a current pulse signal responding to a single photon is generated.
In the process of implementing the present invention, the inventor finds that there are at least the following problems in the prior art:
the PN junction in the conventional silicon photomultiplier generally comprises a high-concentration P (or N) -type doped region close to the surface of a silicon material and a lower-doped N (or P) well located below the high-concentration P (or N) -type doped region, and has a shallow junction depth and a narrow depletion region width, so that the conventional silicon photomultiplier has a high detection efficiency for blue-violet light with a short wavelength, but has a low detection efficiency for photons with a long wavelength (e.g., red light and near-infrared light).
SUMMERY OF THE UTILITY MODEL
An object of the embodiments of the present invention is to provide a semiconductor device and a photodetection system to improve the detection efficiency of photons with longer wavelength.
In order to solve the above technical problem, an embodiment of the present invention provides a semiconductor device, which may include:
an epitaxial layer including a first portion and a second portion of a first conductivity type, and a first doped region, a second doped region, and a third doped region of the first conductivity type formed in the first portion on a side away from the second portion, wherein the second doped region is located between the first doped region and the third doped region, and the second portion, the first doped region, the second doped region, and the third doped region each have a doping concentration greater than that of the first portion, and an output terminal of the semiconductor device is formed by the first doped region;
a passivation layer over the one side of the first portion and having a reflective region formed therein corresponding to the first doped region.
Optionally the semiconductor device further comprises:
a protective layer disposed in the passivation layer on a side opposite the epitaxial layer.
Optionally, the second portion is prepared by doping the first portion with a first doping material on a side of the first portion remote from the passivation layer.
Optionally, the third doped regions are located at two side edges of the epitaxial layer.
Optionally, the reflective region is filled with a metal material or a dielectric material with a multilayer structure.
Optionally, when the semiconductor device is in an operating state, a first depletion region in a first PN junction formed between the first doped region and a corresponding region in the epitaxial layer below the first doped region and/or a second depletion region in a second PN junction formed between the second doped region and a corresponding region in the epitaxial layer below the second doped region covers at least a portion of the epitaxial layer.
Optionally, the first and second depletion regions cover to the bottom of the first portion.
Optionally, the first portion comprises: an isolation region between the first doped region, the second doped region, and the third doped region.
Optionally, the first portion comprises: a buried layer of the first conductivity type located below at least one of the first doped region and/or at least one of the second doped region in the first portion, the buried layer having a doping concentration greater than a doping concentration of the first portion and less than a doping concentration of the second portion and the second doped region.
Optionally, the first portion comprises: a well region located outside at least one of the first doped region, the second doped region, and the third doped region within the first portion, and each of the well regions having a doping concentration lower than a doping concentration of the corresponding first doped region, the second doped region, or the third doped region.
Optionally, the epitaxial layer comprises a simple or compound semiconductor material of a group iva element.
Optionally, the thickness of the first part is 1-10 microns.
The embodiment of the utility model also provides a photoelectric detection system, and this photoelectric detection system can include above-mentioned semiconductor device.
By above the technical scheme of the utility model the embodiment provides, the embodiment of the utility model provides a semiconductor device forms the first doping region that is second conductivity type, second doping region and is the third doping region of first conductivity type through the one side of keeping away from the second part in the first part of epitaxial layer, forms the output of this semiconductor device and first doping region and third doping region are separated by the second doping region through first doping region, this can increase the width of the first depletion region in the first PN junction that forms between the corresponding region in first doping region and epitaxial layer and substrate when this semiconductor device is in operating condition to can reduce the influence of device internal noise to first PN junction, thereby can improve the detection efficiency to the longer photon of wavelength. In addition, by providing the reflective region corresponding to the first doped region in the passivation layer, light passing through the first doped region can be reflected, thereby further improving photon detection efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without inventive labor.
FIG. 1 is a schematic diagram of a prior art silicon photomultiplier structure;
fig. 2 is a schematic structural diagram of a semiconductor device according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a semiconductor device according to another embodiment of the present invention;
fig. 4 is a schematic structural diagram of a semiconductor device according to another embodiment of the present invention;
fig. 5 is a schematic structural diagram of a semiconductor device according to still another embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only used for explaining some embodiments of the present invention, but not all embodiments, and are not intended to limit the scope of the present invention or the claims. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected/coupled" to another element, it can be directly connected/coupled to the other element or intervening elements may also be present. The term "connected/coupled" as used herein may include electrical and/or mechanical physical connections/couplings. The term "comprises/comprising" as used herein refers to the presence of features, steps or elements, but does not preclude the presence or addition of one or more other features, steps or elements. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. The terms "above" and "below" as used herein are relative terms only, and upper may also refer to lower and vice versa, depending on the different viewing orientations or placement positions.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
In the description of the present invention, the terms "first," "second," "third," and the like are used for descriptive purposes only and to distinguish similar objects, and there is no order of precedence between them nor is it to be construed as indicating or implying relative importance. In addition, in the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, the first conductivity type may refer to P-type doping, which mainly relies on hole conduction, the second conductivity type may refer to N-type doping, which mainly relies on electron conduction, alternatively, the first conductivity typeMay refer to N-type doping and the second conductivity type may refer to P-type doping. Additionally, "P +" and "P-" may refer to relatively higher and lower doping concentrations, respectively, as compared to the doping concentration of a P-type doped region, while "N +" and "N-" may refer to relatively higher and lower doping concentrations, respectively, as compared to the doping concentration of an N-type doped region, e.g., the doping concentrations of the P + -type and N + -type doped layers/regions may be 1x1019～1x1021cm-3The doping concentration of the P-type and N-type doped layers/regions may be 1x1016～1x1018cm-3. Doped regions or doped layers having the same conductivity type may have the same or different doping concentrations, or doped regions or doped layers having different conductivity types may have the same or different doping concentrations, unless otherwise specified.
The semiconductor device and the photodetection system for photon detection provided by the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 2, an embodiment of the present invention provides a semiconductor device, which may include: an epitaxial layer 200 including a first portion 210 and a second portion 220 of a first conductivity type, and a first doped region 240, a second doped region 250, and a third doped region 260 of the first conductivity type formed in the first portion 210 on a side away from the second portion 220, the first doped region 240, the second doped region 250, and the third doped region 260 being of a second conductivity type opposite to the first conductivity type, wherein the second doped region 250 is located between the first doped region 240 and the third doped region 260 to space them apart; a passivation layer 230 located over a side of the first portion 210 where the first to third doped regions 230 to 250 are formed, and having a reflective region 270 formed at a position corresponding to the first doped region 230 at the inside thereof. Wherein the doping concentrations of the second portion 220, the first doping region 240, the second doping region 250 and the third doping region 260 are all greater than the doping concentration of the first portion 210 and the doping concentrations of the second portion 220, the first doping region 240, the second doping region 250 and the third doping region 260 may be the same or different, and the output terminal of the semiconductor device may be formed by the first doping region 240.
The epitaxial layer 200 may include a first portion 210 and a second portion 220 made of a first doping material, wherein the doping concentration of the first portion 210 may be lower than the doping concentration of the second portion 220, for example, the first portion 210 is doped P-type, the second portion is doped P-type or P + -type, and the thickness of the first portion 210 is generally 1 to 10 micrometers. In addition, the second portion 220 may be prepared by implanting a first doping material into the first portion 210 on a side away from the passivation layer 230, which may act as a support for the first portion 210, the passivation layer 230, and the like. The first doping material may be a simple substance of a group iva element or a compound semiconductor material, such as silicon, germanium, silicon carbide, or the like, but is not limited thereto. By forming the epitaxial layer 200 from germanium or silicon carbide, the detection efficiency of visible light (e.g., red light) and near-infrared light with longer wavelengths can be improved.
The first doped region 240 and the second doped region 250 may be filled with a second doping material having a conductivity type opposite to that of the first doping material, and the doping concentrations inside the two may be the same or different. The third doped region 260 may be filled with the first doping material and may be located at both side edges of the first portion 210, so that more first doped regions 240 may be formed on the first portion 210, and thus, the photon detection efficiency may be improved. When the semiconductor device is in an operating state (i.e., a power-on state), a first depletion region in a first PN junction formed between the first doped region 240 and a corresponding region within the epitaxial layer 200 below the first doped region 240 (as shown by the dashed region in fig. 2) and/or a second depletion region in a second PN junction formed between the second doped region 250 and a corresponding region within the epitaxial layer 200 below the second doped region 250 (as shown by the dashed region in fig. 2) may cover at least a portion of the epitaxial layer 200, which may increase the depth of the first and second PN junctions formed. Preferably, the first depletion region and the second depletion region may cover the bottom of the first portion 210, that is, the first portion 210 is completely depleted in the depth direction, which may form a conductive path inside the semiconductor device through the third doped region 260, the first portion 210, the second portion 220, the first portion 210 to the first doped region 240, so that the depth of the formed PN junction may be increased and the width of the depletion region inside the PN junction may be increased, thereby increasing the effective absorption depth range of photons, improving the detection efficiency of photons with longer wavelengths (e.g., red light or near infrared light), and the electric field formed inside the semiconductor device has higher uniformity in the horizontal direction, thereby reducing dark count pulses caused by local high electric fields. In addition, the first depletion region and/or the second depletion region formed may also extend to the second portion 220.
The passivation layer 230 may include at least one reflective region 270 corresponding to the first doped region 240 to reflect light incident from a side of the second portion 220 and passing through the first portion 210 and the first doped region 240, so that photon detection efficiency may be improved. The reflective region 270 may be filled with a metal material (e.g., gold, silver, or copper), or other materials with high reflectivity, such as a dielectric material with a multi-layer structure made of silicon oxide or silicon nitride. In addition, the size of the reflective region 270 may be greater than or equal to the size of the first doped region 240, so as to reflect all light emitted from the first doped region 240, thereby further improving photon detection efficiency.
In addition to the first to third doped regions 240 to 260, at least one isolation region 255 (e.g., STI region) may be formed on an outer surface of the first portion 210 on a side away from the second portion 220 to space the first, second and third doped regions 240, 250 and 260 two by two. As shown in fig. 2, the isolation regions 255 may be separated from the first doped region 240, the second doped region 250 and the third doped region 260 on the side surfaces thereof, respectively, to reduce noise, or as shown in fig. 3, the isolation regions 255 may be coupled to the first doped region 240, the second doped region 250 and the third doped region 260 on the side surfaces thereof, respectively, to improve electrical performance. Additionally, the depth of these isolation regions 255 may be less than or equal to the depth of the first, second, and/or third doped regions 250, 260.
In addition, buried layers 280 (e.g., P-type buried layers or N-type buried layers) of the first conductivity type may be formed in the first portion 210 under at least one first doped region 240 (preferably, all the first doped regions 240), the buried layers 280 may be respectively located at sides close to the corresponding first doped regions 240, and the doping concentration of the buried layers 280 may be greater than that of the first portion 210 and less than that of the second portion 220 and the third doped regions 260. Each buried layer 280 may be separated from (as shown in fig. 2) or coupled to (as shown in fig. 3) the first doped region 240 located above it to reduce noise or improve electrical performance. By forming the buried layer 280 in the first portion 210, the width of the first depletion region in the formed first PN junction can be further increased, so that the photon absorption depth range and the photon detection efficiency can be improved. Furthermore, a buried layer 280 may also be formed in the first portion 210 below at least one second doped region 250 (preferably all second doped regions 250).
In addition, a corresponding well region may also be formed in the first portion 210 outside at least one of the first doped region 240, the second doped region 250, and the third doped region 260 to enclose at least a portion of the corresponding doped region (the first doped region 240, the second doped region 250, or the third doped region 260). Each well region may have a doping concentration lower than that of the corresponding doped region, and the well region and the corresponding doped region have the same conductivity type. For example, as shown in fig. 4, a first well region 241 of the second conductivity type may be formed in the first portion 210 outside the first doped region 240, and the first well region 241 may surround at least a portion of the first doped region 240 to form a protection for the first doped region 240; a second well region 251 of the second conductivity type may also be formed within the first portion 210 outside of the second doped region 250 to enclose at least a portion of the second doped region 250 therein to form a protection for the second doped region 250.
In addition, as shown in fig. 2 to 4, a third well region 261 of the first conductivity type may be further formed in the first portion 210 outside the third doped region 260, and the third well region 261 may surround at least a portion of the third doped region 260 to enhance conductivity between the third doped region 260 and the second portion 220. The doping concentration of the third well region 261 may be lower than the doping concentration of the third doped region 260. The third doped region 260 and the third well region 261 may constitute one electrode of the semiconductor device. For example, when the third doped region 260 is a P + -type doped region and the third well region 261 is a P-well, both may constitute an anode, and when the third doped region 260 is an N + -type doped region and the third well region 261 is an N-well, both may constitute a cathode. In addition, another electrode of the semiconductor device may be formed through the first doping region 240 to serve as an output terminal (not shown) of the semiconductor device. A bias voltage may be provided through the two electrodes to a conductive path formed within the semiconductor device for photon detection. As to how the electrode is formed on the doped region, reference may be made to the corresponding description in the prior art, which is not repeated here.
In another embodiment, as shown in fig. 5, the semiconductor device may further include a protective layer 290, which may be disposed on a side of the passivation layer 230 opposite the epitaxial layer 200, and may be bonded to the passivation layer 230. The protective layer 290 may be used to protect the passivation layer 230, the epitaxial layer 200, and the like, and to prevent the internal structure from being damaged. In addition, when the semiconductor device is placed upside down (i.e., the up-down direction is interchanged in the drawing), the protective layer 290 may also function as a support for the passivation layer 230, the epitaxial layer 200, and the like.
As can be seen from the above description, the embodiment of the present invention forms the first doping region, the second doping region and the third doping region of the first conductivity type through the side of the first portion of the epitaxial layer away from the substrate, the output end of the semiconductor device is formed through the first doping region, and the first doping region and the third doping region are separated by the second doping region, so compared with the case where the first doping region and the third doping region are adjacent, this can increase the width of the first depletion region in the first PN junction formed between the first doping region and the corresponding region in the epitaxial layer and the substrate when the semiconductor device is in the operating state, and can reduce the influence of the internal noise of the device on the first PN junction, thereby improving the detection efficiency of photons with longer wavelength. In addition, by providing the reflective region corresponding to the first doped region in the passivation layer, light passing through the first doped region can be reflected, thereby further improving photon detection efficiency. In addition, when the semiconductor device is in an operating state, depletion regions in the first PN junction and the second PN junction formed in corresponding regions in the epitaxial layer below the first doped region and the second doped region may cover the bottom of the first portion, which may form a conductive path composed of the third doped region, the first portion, the second portion, the first portion, and the first doped region, so that the depth of the first PN junction and the width of the first depletion region may be further improved, and further the photon detection efficiency may be further improved.
In addition, the embodiment of the present invention also provides another photodetection system, which may include the semiconductor devices described in all the above embodiments. The photodetection system may detect photons emitted from a target object (e.g., a patient or an animal injected with a tracer, etc.) using the semiconductor device and process the photon data detected by the semiconductor device to obtain corresponding information of the target object.
For a description of the other components of the photo detection system, reference may be made to the prior art, which is not described in detail herein.
The systems, devices, modules, units, etc. set forth in the above embodiments may be embodied as chips and/or entities (e.g., discrete components) or as products having certain functions. For convenience of description, the above devices are described separately in terms of functional divisions into various layers. Of course, in implementing the embodiments of the present invention, the functions of each layer may be integrated into one or more chips.
Although the present invention provides components as described in the above embodiments or figures, more or fewer components may be included in the device based on conventional or non-inventive efforts. The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments.
The above-described embodiments are described in order to enable those of ordinary skill in the art to make and use the invention. It will be readily apparent to those skilled in the art that various modifications to these embodiments may be made, and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the above embodiments, and those skilled in the art should make improvements and modifications within the scope of the present invention according to the disclosure of the present invention.
Claims (13)
1. A semiconductor device, characterized in that the semiconductor device comprises:
an epitaxial layer including a first portion and a second portion of a first conductivity type, and a first doped region, a second doped region, and a third doped region of the first conductivity type formed in the first portion on a side away from the second portion, wherein the second doped region is located between the first doped region and the third doped region, and the second portion, the first doped region, the second doped region, and the third doped region each have a doping concentration greater than that of the first portion, and an output terminal of the semiconductor device is formed by the first doped region;
a passivation layer over the one side of the first portion and having a reflective region formed therein corresponding to the first doped region.
2. The semiconductor device according to claim 1, further comprising:
a protective layer disposed in the passivation layer on a side opposite the epitaxial layer.
3. The semiconductor device according to claim 1, wherein the second portion is prepared by doping a first doping material in a side of the first portion remote from the passivation layer.
4. The semiconductor device of claim 1, wherein the third doped regions are located at both side edges of the epitaxial layer.
5. The semiconductor device according to claim 1, wherein the reflective region is filled with a metal material or a dielectric material having a multilayer structure.
6. The semiconductor device according to claim 1, wherein a first depletion region in a first PN junction formed between the first doped region and a corresponding region in the epitaxial layer below the first doped region and/or a second depletion region in a second PN junction formed between the second doped region and a corresponding region in the epitaxial layer below the second doped region cover at least a portion of the epitaxial layer when the semiconductor device is in an operating state.
7. The semiconductor device according to claim 6, wherein the first depletion region and the second depletion region cover to a bottom of the first portion.
8. The semiconductor device according to claim 1, wherein the first portion comprises: an isolation region between the first doped region, the second doped region, and the third doped region.
9. The semiconductor device according to claim 1, wherein the first portion comprises: a buried layer of the first conductivity type located below at least one of the first doped region and/or at least one of the second doped region in the first portion, the buried layer having a doping concentration greater than a doping concentration of the first portion and less than a doping concentration of the second portion and the second doped region.
10. The semiconductor device according to claim 1, wherein the first portion comprises: a well region located outside at least one of the first doped region, the second doped region, and the third doped region within the first portion, and each of the well regions having a doping concentration lower than a doping concentration of the corresponding first doped region, the second doped region, or the third doped region.
11. The semiconductor device of claim 1, wherein the epitaxial layer comprises a simple or compound semiconductor material of a group IVA element.
12. The semiconductor device according to claim 1, wherein a thickness of the first portion is 1 to 10 μm.
13. A photodetection system, characterized in that the photodetection system comprises a semiconductor device according to any of the claims 1-12.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020944173.XU CN211980629U (en) | 2020-05-28 | 2020-05-28 | Semiconductor device and photodetection system |
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