CN211872084U - A chemical vapor deposition device - Google Patents

Abstract

The utility model discloses a chemical vapor deposition device, comprising: a shell, a deposition cavity is arranged in the shell; a material placement plate, which is arranged in the deposition cavity and used for placing a substrate requiring vapor deposition; an induction coil, The induction coil is arranged inside the deposition chamber and below the material placement plate, and the induction coil is used to generate an induction magnetic field. The chemical vapor deposition device of the utility model is designed according to the principle of the multi-element coupling field deposition method, which is mainly used for the chemical vapor deposition of plate-shaped parts. The placement plate makes the placement plate generate induced current to generate heat, and the heat is transferred to the substrate to form the temperature required for deposition. Because the substrate is in the induced magnetic field, the induced magnetic field attracts the free radicals and other particles generated by the cracking of hydrocarbons to move to the substrate, which increases the collision probability of the free radicals and other particles with the deposition surface, thereby greatly improving the deposition rate.

Description

A chemical vapor deposition device

technical field

The utility model relates to the technical field of chemical vapor deposition, in particular to a chemical vapor deposition device.

Background technique

Chemical vapor deposition is a common method for producing carbon-carbon, silicon carbide and other composite materials. Carbon-carbon composites and carbon-ceramic composites are used in aerospace due to their high strength and high operating temperature. A series of superior properties, chemical vapor deposition The chemical vapor deposition method is one of the main methods for preparing composite materials. The composite materials prepared by chemical vapor deposition have a series of advantages such as high purity and good mechanical properties, but the biggest problem at present is the long molding cycle and high cost.

Utility model content

(1) Purpose of utility model

The purpose of this utility model is to provide a chemical vapor deposition device to solve the above problems.

(2) Technical solutions

In order to solve the above problems, a first aspect of the present utility model provides a chemical vapor deposition device, comprising: a casing, a deposition cavity is arranged in the casing, and an air inlet and an exhaust outlet are arranged on the casing; A feeding plate, the feeding plate is arranged in the deposition chamber, and is used for placing the substrate to be vapor-deposited; an induction coil, the induction coil is arranged inside the deposition chamber and below the feeding plate, so The induction coil is used to generate an induced magnetic field.

Further, the loading plate is provided with a gas-phase substance passing hole, and the gas-phase substance passing hole is used to increase the contact area between the substrate and the gas-phase substance.

Further, there are a plurality of gas-phase material passing holes, and the plurality of gas-phase material passing holes are through holes opened along the axial direction of the stocking plate.

Further, the gas-phase substances are uniformly distributed on the stocking plate through the holes.

Further, the plane where the stocking plate is located is parallel to and concentric with the plane where the induction coil is located.

Further, the induction coil is connected to an AC power source, and the frequency range of the AC power source is: _10-50Hz .

Further, the air inlet is provided on the top surface of the housing; the exhaust port is provided on the bottom surface of the housing.

Further, a thermal insulation layer is provided inside the shell, the thermal insulation layer surrounds a thermal insulation cavity, and the material placement plate is arranged inside the thermal insulation cavity; the air inlet connects the inside of the thermal insulation layer with the shell. The outside of the body communicates with the outside of the casing, and the exhaust port communicates the inside of the thermal insulation layer with the outside of the housing.

Further, the induction coil is arranged outside the heat preservation cavity.

Further, the shell is provided with a water-cooled interlayer inside, and the water-cooled interlayer is provided with a water inlet and a water outlet.

(3) Beneficial effects

The above-mentioned technical scheme of the present utility model has the following beneficial technical effects:

The chemical vapor deposition device of the utility model is designed according to the principle of the multi-element coupling field deposition method, which is mainly used for the chemical vapor deposition of plate-shaped parts. The placement plate makes the placement plate generate induced current to generate heat, and the heat is transferred to the substrate to form the temperature required for deposition. Because the substrate is in the induced magnetic field, the induced magnetic field attracts the free radicals and other particles generated by the cracking of hydrocarbons to move to the substrate, which increases the collision probability of the free radicals and other particles with the deposition surface, thereby greatly improving the deposition rate.

Description of drawings

FIG. 1 is a schematic structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic structural diagram of a stocking plate according to an embodiment of the present invention.

3 is a schematic structural diagram of an induction coil according to an embodiment of the present invention.

Reference number:

1: Shell; 11: Deposition chamber; 12: Air inlet; 13: Air outlet; 14: Water cooling interlayer; 141: Water inlet; 142: Water outlet; 15: Insulation layer; 151: Insulation chamber; 2: Placement material plate; 21: gas-phase substance passing hole; 3: substrate; 4: induction coil; 5: AC power supply.

Detailed ways

In order to make the purpose, technical solutions and advantages of the present utility model more clear, the present utility model will be further described in detail below in conjunction with the specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present invention.

A schematic diagram of a layer structure according to an embodiment of the present invention is shown in the accompanying drawings. The figures are not to scale, some details are exaggerated for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships are only exemplary, and may vary in practice due to manufacturing tolerances or technical limitations, and those skilled in the art will Regions/layers with different shapes, sizes, relative positions can be additionally designed as desired.

Obviously, the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as there is no conflict with each other.

The present invention will be described in more detail below with reference to the accompanying drawings. In the various figures, like elements are designated by like reference numerals. For the sake of clarity, various parts in the figures have not been drawn to scale.

FIG. 1 is a schematic structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic structural diagram of a stocking plate according to an embodiment of the present invention.

3 is a schematic structural diagram of an induction coil according to an embodiment of the present invention.

As shown in FIG. 1 , FIG. 2 and FIG. 3 , in an implementation of an embodiment of the present invention, a chemical vapor deposition apparatus is provided, which is characterized in that it includes: a casing 1 , and a deposition chamber is arranged in the casing 1 11. The housing 1 is provided with an air inlet 12 and an exhaust port 13. A loading plate 2 is provided in the deposition chamber 11 for placing the substrate 3 that needs vapor deposition, the induction coil 4, and the induction coil 4 The induction coil 4 is arranged inside the deposition chamber 11 and below the material placement plate 2 , and the induction coil 4 is used to generate an induction magnetic field. The chemical vapor deposition device of the utility model is designed according to the principle of the multi-element coupling field deposition method, which is mainly used for the chemical vapor deposition of plate-shaped parts. Through the placement plate 2, the placement plate 2 generates an induced current to generate heat, and the heat is transferred to the substrate 3 to form a temperature required for deposition. Because the substrate 3 is in the induced magnetic field, the induced magnetic field attracts the free radicals and other particles generated by the cracking of hydrocarbons to move to the substrate 3, which increases the collision probability between the free radicals and other particles and the deposition surface, so that the deposition rate is greatly improved. improve.

The organic coupling of multiple physical fields such as temperature field, concentration field, and induced magnetic field is an effective way for rapid densification. In this application, the substrate 3 is designed to be in the multiple coupling field to achieve the purpose of rapid deposition and densification.

In an optional embodiment, the induction coil 4 is in a spiral shape, and the central connecting wire and the outer ring connecting wire are connected to the AC power source 5 .

In an optional embodiment, the loading plate 2 is provided with a gas-phase substance passing hole 21 , and the gas-phase substance passing hole 21 is used to increase the contact area between the substrate 3 and the gas-phase substance.

In an optional embodiment, there are a plurality of gas-phase material passing holes 21, and the plurality of gas-phase material passing holes 21 are through holes opened along the axial direction of the material holding plate 2. The loading plate 2 adopts a porous structure, so that the gas phase material in the initial stage of deposition can pass through the substrate 3 in all directions, thereby accelerating the deposition rate.

In an optional embodiment, the gas-phase substances are evenly distributed on the loading plate 2 through the holes 21 . The contact area between the substrate 3 and the gaseous substance is greatly increased, so that the deposition of the substrate 3 is more uniform.

In an optional embodiment, the plane where the stocking plate 2 is located is parallel to and concentric with the plane where the induction coil 4 is located.

In an optional embodiment, the induction coil 4 is connected to an AC power source 5, and the frequency range of the AC power source 5 is: 10-50 _Hz .

In an optional embodiment, the AC power supply 5 is an intermediate frequency power supply, and the intermediate frequency current passes through the disc induction coil 4 installed at the bottom of the insulating layer 15, and the induction coil 4 generates a changed induction magnetic field under the action of the intermediate frequency current through the porous hole. plate 2, so that the placement plate 2 generates induced current to generate heat, and the heat is transferred to the substrate 3 to form the temperature required for deposition.

In an optional embodiment, the air inlet 12 is provided on the top surface of the housing 1 , and the exhaust port 13 is provided on the bottom surface of the housing 1 . During the deposition process, the heat of the substrate 3 comes from the induction heat generated by the porous stock plate 2, and the substrate 3 will be preferentially deposited on the side close to the stock plate 2. Therefore, the process gas of this equipment adopts the upper air intake and the lower exhaust, so that the lining The parts of the bottom 3 where no deposition has occurred can preferentially come into contact with fresh gaseous species.

In an optional embodiment, a thermal insulation layer 15 is provided inside the casing 1 , the thermal insulation layer 15 surrounds and forms a thermal insulation cavity 151 , and the stocking plate 2 is arranged inside the thermal insulation cavity 151 .

In an alternative embodiment, the induction coil is arranged outside the heat preservation chamber 151 .

In an optional embodiment, the cooling water enters through the water inlet 141 and is discharged through the water outlet 142 .

In a preferred embodiment, the cooling water enters through the water inlet 141 at the bottom of the device, and the cooling water is flooded upward from the bottom end through a water pump or other pressurizing device or structure, flows through the bottom and side surfaces of the device, and is then discharged from the water outlet 142. .

In an optional embodiment, the water-cooling interlayer 14 may be a pipe structure, and pipes are densely distributed in the casing 1 .

In an optional embodiment, the housing 1 is provided with a water-cooling interlayer 14 inside, and the water-cooling interlayer 14 is provided with a water inlet 141 and a water outlet 142 . The thermal insulation layer 15 is not absolute heat insulation, and water cooling must take away the permeated heat under long-term operation. In order to improve the service life and the strength of use at a certain temperature, the water-cooled interlayer 14 structure is adopted, and cooling water is introduced in the position shown in the figure to form a uniform cooling water flow field, which ensures the service life of the furnace shell.

In an optional embodiment, a gap is left between the thermal insulation layer 15 and the casing 1 , and a first support portion is provided on the bottom surface of the casing 1 , and the first support portion is used to support the thermal insulation layer 15 .

In an optional embodiment, the bottom surface of the thermal insulation layer 15 is arranged between the stocking plate 2 and the induction coil 4;

In an optional embodiment, a second support portion is provided on the bottom surface of the interior of the thermal insulation layer 15 , and the second support portion is used to support the stock plate 2 .

The utility model aims to protect a chemical vapor deposition device, which is characterized by comprising: a casing 1, a deposition cavity 11 is arranged in the casing 1, and an air inlet 12 and an exhaust outlet 13 are arranged in the casing 1. 2. The placement plate 2 is arranged in the deposition chamber 11 for placing the substrate 3 that needs to be vapor-deposited, and the induction coil 4 is arranged inside the deposition chamber 11 and under the placement plate 2. The induction coil 4 is used for Generates an induced magnetic field. The chemical vapor deposition device of the utility model is designed according to the principle of the multi-coupling field deposition method, which is mainly used for the chemical vapor deposition of plate-shaped parts. The induction coil 4 generates a changing induction magnetic field under the action of the current. Through the placement plate 2, the placement plate 2 generates an induced current to generate heat, and the heat is transferred to the substrate 3 to form a temperature required for deposition. Because the substrate 3 is in the induced magnetic field, the induced magnetic field attracts the free radicals and other particles generated by the cracking of hydrocarbons to move to the substrate 3, which increases the collision probability of the free radicals and other particles with the deposition surface, so that the deposition rate is greatly improved. improve.

The present invention has been described above with reference to the embodiments of the present invention. However, these examples are for illustrative purposes only, and are not intended to limit the scope of the present invention. The scope of the present invention is defined by the appended claims and their equivalents. Without departing from the scope of the present invention, those skilled in the art can make various replacements and modifications, and these replacements and modifications should all fall within the scope of the present invention.

Claims (10)

1. a chemical vapor deposition device, is characterized in that, comprises: a housing (1), wherein a deposition chamber (11) is arranged in the housing (1), and an air inlet (12) and an exhaust outlet (13) are arranged on the housing (1); a stocking plate (2), the stocking plate (2) is arranged in the deposition chamber (11), and is used for carrying a substrate (3) that needs to be vapor-deposited; An induction coil (4) is provided inside the deposition chamber (11) and below the material placement plate (2), and the induction coil (4) is used to generate an induction magnetic field. 2. The chemical vapor deposition apparatus according to claim 1, characterized in that, The loading plate (2) is provided with a gas-phase substance passing hole (21), and the gas-phase substance passing hole (21) is used to increase the contact area between the substrate (3) and the gas-phase substance. 3. The chemical vapor deposition apparatus according to claim 2, characterized in that, There are a plurality of gas-phase material passing holes (21), and the plurality of gas-phase material passing holes (21) are through holes opened along the thickness direction of the material holding plate (2). 4. The chemical vapor deposition apparatus according to claim 3, wherein, A plurality of the gas-phase substances are uniformly distributed on the stocking plate (2) through the holes (21). 5. The chemical vapor deposition apparatus according to claim 1, wherein, The plane where the stocking plate (2) is located is parallel to the plane where the induction coil (4) is located. 6. The chemical vapor deposition apparatus according to claim 1, wherein, The induction coil (4) is connected to an alternating current power source (5), and the frequency range of the alternating current power source (5) is 10-50 _Hz . 7. The chemical vapor deposition apparatus according to claim 1, wherein, The air inlet (12) is arranged on the top of the housing (1); The exhaust port (13) is arranged at the bottom of the casing (1). 8. The chemical vapor deposition apparatus according to claim 1, wherein, An insulating layer (15) is provided inside the housing (1), the insulating layer (15) surrounds a heat insulating cavity (151), and the material placement plate (2) is arranged inside the heat insulating cavity (151). ; The air inlet (12) communicates the inside of the thermal insulation layer (15) with the outside of the casing (1), and the exhaust port (13) connects the inside of the thermal insulation layer (15) with the casing (1). 1) of the external connection. 9. The chemical vapor deposition apparatus according to claim 8, wherein: The induction coil (4) is arranged outside the heat preservation cavity (151). 10. The chemical vapor deposition apparatus according to claim 1, wherein, The shell (1) is provided with a water-cooled interlayer (14) inside, and a water inlet (141) and a water outlet (142) are arranged on the water-cooled interlayer (14).

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