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CN209759580U - A CVD deposition furnace with diverter plate - Google Patents

A CVD deposition furnace with diverter plate Download PDF

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Publication number
CN209759580U
CN209759580U CN201920285249.XU CN201920285249U CN209759580U CN 209759580 U CN209759580 U CN 209759580U CN 201920285249 U CN201920285249 U CN 201920285249U CN 209759580 U CN209759580 U CN 209759580U
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hole
central axis
splitter plate
plate
distance
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汪洋
万强
柴攀
刘佳宝
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Hunan Dezhi New Materials Co ltd
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Hunan Dezhi New Material Co Ltd
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Abstract

本实用新型提供了一种带分流盘的CVD沉积炉装置,包括炉体、进气装置、分流盘和沉积室,分流盘设有若干个孔洞,源气体经过进气装置到达混气室后,将通过分流盘上的孔洞进入沉积室,由于靠近分流盘中轴线的孔洞内径较细、倾角较大,因此避免了沉积室内靠近分流盘中轴线局部空间的气体浓度过大,与此同时,远离分流盘中轴线的孔洞内径较粗、倾角较小,因此避免了沉积室内靠近分流盘中轴线局部空间的气体浓度过小,总体上,进入沉积室内气体浓度趋向均匀,大大提高了源气体的利用效率,显著提高了沉积品质。

The utility model provides a CVD deposition furnace device with a splitter plate, which includes a furnace body, an air intake device, a splitter plate and a deposition chamber. The splitter plate is provided with a number of holes, and the source gas passes through the intake device and reaches the gas mixing chamber. It will enter the deposition chamber through the holes on the splitter plate. Since the inner diameter of the holes near the central axis of the splitter plate is thinner and the inclination angle is larger, the excessive gas concentration in the local space near the central axis of the splitter plate is avoided. At the same time, it is far away from the The inner diameter of the holes on the central axis of the splitter plate is thicker and the inclination angle is smaller, so the gas concentration in the local space close to the central axis of the splitter plate in the deposition chamber is avoided from being too small. In general, the gas concentration in the deposition chamber tends to be uniform, which greatly improves the utilization of the source gas. efficiency, significantly improving the deposition quality.

Description

一种带分流盘的CVD沉积炉A CVD deposition furnace with diverter plate

技术领域technical field

本实用新型涉及半导体工业领域,特别涉及一种带分流盘的CVD沉积炉。The utility model relates to the field of semiconductor industry, in particular to a CVD deposition furnace with a diverter plate.

背景技术Background technique

作为半导体工业中应用广泛的技术之一,化学气相沉积(CVD)是将含有原材料组分的源气体输入高温沉积炉,通过扩散和对流等机理沉积在预制件上沉积一层固态薄膜并生成成品的工艺过程。在CVD工艺中,沉积炉结构对沉积效率和沉积品质有很大影响。As one of the widely used technologies in the semiconductor industry, chemical vapor deposition (CVD) is to input the source gas containing raw material components into a high-temperature deposition furnace, and deposit a solid film on the preform through diffusion and convection mechanisms to form a finished product. process. In the CVD process, the structure of the deposition furnace has a great influence on the deposition efficiency and deposition quality.

现有传统的沉积炉通常由一个平面状分流盘分隔成混气室和沉积室,源气体通过进气管后首先进入混气室。在混气室中,由于进气装置靠近分流盘中轴线,因此靠近分流盘中轴线局部区域的气体浓度较大,反之,远离分流盘中轴线局部区域的气体浓度较小,造成混气室内气体浓度不均。由于现有沉积炉的孔洞大小和形状均与所设位置均在,因此通过分流盘上的孔洞进入沉积室后,这种气体浓度不均现象依然存在,影响了沉积效率和沉积品质。The existing traditional deposition furnace is usually divided into a gas mixing chamber and a deposition chamber by a planar splitter plate, and the source gas first enters the gas mixing chamber after passing through the inlet pipe. In the gas mixing chamber, since the air inlet device is close to the central axis of the splitter plate, the gas concentration in the local area close to the central axis of the splitter plate is relatively large; on the contrary, the gas concentration in the local area far away from the central axis of the splitter plate is small, resulting in the gas concentration in the gas mixing chamber. Uneven concentration. Since the size and shape of the holes in the existing deposition furnace are consistent with the set position, the uneven gas concentration still exists after entering the deposition chamber through the holes on the splitter plate, which affects the deposition efficiency and deposition quality.

实用新型内容Utility model content

本实用新型的目的在于提供一种带分流盘的CVD沉积炉装置,旨在解决现有技术中源气体损耗过大、在沉积室内分布不均的技术问题,采用的技术方案如下:The purpose of this utility model is to provide a CVD deposition furnace device with a diverter plate, aiming to solve the technical problems of excessive loss of source gas and uneven distribution in the deposition chamber in the prior art, and the adopted technical scheme is as follows:

一种带分流盘的CVD沉积炉装置,包括炉体、进气装置、混气室、分流盘和沉积室,进气装置、混气室、分流盘和沉积室依次分布,均与炉体连接,分流盘顶面靠近进气装置,分流盘底面靠近沉积室,分流盘顶面和底面为圆形,顶面半径和底面半径均大于分流盘厚度;A CVD deposition furnace device with a diverter plate, including a furnace body, an air intake device, a gas mixing chamber, a diversion plate and a deposition chamber, the gas intake device, the gas mixing chamber, a diversion plate and a deposition chamber are distributed in sequence, and are all connected to the furnace body , the top surface of the diverter tray is close to the air intake device, the bottom surface of the diverter tray is close to the deposition chamber, the top surface and the bottom surface of the diverter tray are circular, and the radius of the top surface and the bottom surface are both larger than the thickness of the diverter tray;

分流盘设有若干个孔洞,孔洞横截面为圆形或椭圆形,孔洞贯穿分流盘顶面和底面;The diverter plate is provided with several holes, the cross section of which is circular or oval, and the holes run through the top and bottom of the diverter plate;

孔洞中轴线与分流盘顶面的交点到分流盘中轴线的距离为孔洞顶距,孔洞中轴线与分流盘底面的交点到分流盘中轴线的距离为孔洞底距,孔洞顶距小于孔洞底距;The distance from the intersection point of the central axis of the hole and the top surface of the distribution plate to the central axis of the distribution plate is the top distance of the hole, and the distance from the intersection point of the central axis of the hole and the bottom surface of the distribution plate to the central axis of the distribution plate is the bottom distance of the hole, and the top distance of the hole is smaller than the bottom distance of the hole ;

孔洞中轴线与分流盘中轴线的夹角为孔洞倾角,孔洞倾角与孔洞顶距呈负相关,孔洞横截面内径周长与孔洞顶距呈正相关。The angle between the central axis of the hole and the central axis of the diverter plate is the inclination angle of the hole. The inclination angle of the hole is negatively correlated with the distance from the top of the hole, and the inner diameter and circumference of the cross section of the hole are positively correlated with the distance from the top of the hole.

进一步地,分流盘顶面直径为500mm~1200mm,底面直径为500mm~1200mm,厚度为10mm~30mm。Further, the diameter of the top surface of the splitter plate is 500mm-1200mm, the diameter of the bottom surface is 500mm-1200mm, and the thickness is 10mm-30mm.

进一步地,孔洞横截面内径周长为45mm~120mm。Further, the inner diameter and circumference of the cross-section of the hole are 45 mm to 120 mm.

进一步地,孔洞倾角为0°~35°。Further, the inclination angle of the hole is 0°-35°.

进一步地,孔洞中轴线与分流盘中轴线的距离小于10mm。Further, the distance between the central axis of the hole and the central axis of the diverter plate is less than 10mm.

进一步地,孔洞数量为20~50个。Further, the number of holes is 20-50.

进一步地,分流盘材质为石墨或C/C复合材料。Further, the material of the splitter plate is graphite or C/C composite material.

本实用新型提供的热解炉装置的有益效果在于:The beneficial effects of the pyrolysis furnace device provided by the utility model are:

随着孔洞到分流盘中轴线距离增大,孔洞横截面内径周长增大,孔洞倾角变小,使得通过孔洞进入沉积室的气体能实现均匀分布,避免了沉积室内气体浓度不均,大大提高了源气体的利用效率,显著提高了沉积品质。As the distance from the hole to the central axis of the splitter plate increases, the inner diameter and circumference of the cross section of the hole increase, and the inclination angle of the hole becomes smaller, so that the gas entering the deposition chamber through the hole can be evenly distributed, avoiding uneven gas concentration in the deposition chamber, and greatly improving the source efficiency. Gas utilization efficiency significantly improves deposition quality.

附图说明Description of drawings

为了更清楚地说明本实用新型实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本实用新型中记载的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description These are only some embodiments recorded in the utility model, and those skilled in the art can also obtain other drawings according to these drawings without creative work.

图1是本实用新型实施例的热解炉装置结构图。Fig. 1 is a structural diagram of a pyrolysis furnace device according to an embodiment of the present invention.

具体实施方式Detailed ways

为了使本实用新型的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本实用新型进行进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本实用新型,并不用于限定本实用新型。In order to make the purpose, technical solution and advantages of the utility model clearer, the utility model will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the utility model, and are not intended to limit the utility model.

需说明的是,术语“上”、“下”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本专利的限制。术语“第一”、“第二”仅用于便于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明技术特征的数量。“多个”的含义是两个或两个以上,除非另有明确具体的限定。It should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right" and so on are based on the orientation or positional relationship shown in the drawings, and are only for convenience of description, rather than indicating or Implications that a referenced device or element must have a particular orientation, be constructed, and operate in a particular orientation should therefore not be construed as limiting the patent. The terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of technical features. "Plurality" means two or more, unless otherwise clearly and specifically defined.

还需要说明的是,除非另有明确的规定和限定,术语“设置”、“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本实用新型中的具体含义。It should also be noted that, unless otherwise clearly stipulated and limited, the terms "installation", "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection, Or integrally connected; it may be mechanically connected or electrically connected; it may be directly connected or indirectly connected through an intermediary, and it may be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present utility model in specific situations.

为了说明本实用新型所述的技术方案,以下结合具体附图及实施例进行详细说明。In order to illustrate the technical solution described in the utility model, the following will be described in detail in conjunction with specific drawings and embodiments.

如图1所示,本实用新型实施例提供一种带分流盘的CVD沉积炉装置,其特征在于,包括炉体1、进气装置2、混气室3和分流盘4和沉积室5,进气装置2、混气室3、分流盘4和沉积室5依次分布,均与炉体1连接,分流盘4顶面靠近进气装置2,分流盘4底面靠近沉积室5,分流盘4顶面和底面为圆形,顶面半径和底面半径均大于分流盘4厚度;As shown in Figure 1, the embodiment of the utility model provides a CVD deposition furnace device with a diverter plate, which is characterized in that it includes a furnace body 1, an air intake device 2, a gas mixing chamber 3, a diverter plate 4 and a deposition chamber 5, The air intake device 2, the gas mixing chamber 3, the distribution plate 4 and the deposition chamber 5 are distributed in sequence, all of which are connected to the furnace body 1. The top surface of the distribution plate 4 is close to the intake device 2, the bottom surface of the distribution plate 4 is close to the deposition chamber 5, and the distribution plate 4 The top surface and the bottom surface are circular, and the radius of the top surface and the bottom surface are both greater than the thickness of the splitter plate 4;

分流盘4设有若干个孔洞6,孔洞6横截面为圆形或椭圆形,孔洞6贯穿分流盘4顶面和底面;Divider plate 4 is provided with several holes 6, the cross section of hole 6 is circular or oval, and hole 6 runs through the top surface and bottom surface of diverter plate 4;

孔洞6中轴线与分流盘4顶面的交点到分流盘4中轴线的距离为孔洞顶距,孔洞中轴线与分流盘4底面的交点到分流盘4中轴线的距离为孔洞底距,孔洞顶距小于孔洞底距;The distance from the intersection point of the central axis of the hole 6 and the top surface of the distribution plate 4 to the central axis of the distribution plate 4 is the distance from the top of the hole, and the distance from the intersection point of the central axis of the hole and the bottom surface of the distribution plate 4 to the central axis of the distribution plate 4 is the distance from the bottom of the hole. The distance is less than the bottom distance of the hole;

孔洞6中轴线与分流盘4中轴线的夹角为孔洞倾角,孔洞倾角与孔洞顶距呈负相关,孔洞6横截面内径周长与孔洞顶距呈正相关。The angle between the central axis of the hole 6 and the central axis of the diverter plate 4 is the hole inclination angle, and the hole inclination angle is negatively correlated with the distance from the top of the hole, and the circumference of the inner diameter of the cross section of the hole 6 is positively correlated with the distance from the top of the hole.

作为本实施方式的进一步优选,分流盘4顶面直径为500mm~1200mm,底面直径为500mm~1200mm,厚度为10mm~30mm。As a further preference of this embodiment, the diameter of the top surface of the splitter plate 4 is 500 mm to 1200 mm, the diameter of the bottom surface is 500 mm to 1200 mm, and the thickness is 10 mm to 30 mm.

作为本实施方式的进一步优选,孔洞6横截面内径周长为45mm~120mm。As a further preference in this embodiment, the inner diameter and circumference of the cross section of the hole 6 are 45 mm to 120 mm.

作为本实施方式的进一步优选,孔洞倾角为0°~35°。As a further preference of this embodiment, the inclination angle of the holes is 0°-35°.

作为本实施方式的进一步优选,孔洞6中轴线与分流盘4中轴线的距离小于10mm。As a further preference of this embodiment, the distance between the central axis of the hole 6 and the central axis of the diverter plate 4 is less than 10mm.

作为本实施方式的进一步优选,孔洞6数量为20~50个。As a further preference of this embodiment, the number of holes 6 is 20-50.

作为本实施方式的进一步优选,分流盘4材质为石墨或C/C复合材料。As a further preference of this embodiment, the material of the splitter plate 4 is graphite or C/C composite material.

本实施例的工作原理如下:The working principle of this embodiment is as follows:

源气体经进气装置2到达混气室,通过分流盘4上的孔洞6到达沉积室5,由于靠近分流盘中轴线的孔洞内径较细、倾角较大,因此避免了沉积室内靠近分流盘中轴线局部空间的气体浓度过大,与此同时,远离分流盘中轴线的孔洞内径较粗、倾角较小,因此避免了沉积室内靠近分流盘中轴线局部空间的气体浓度过小,总体上,进入沉积室内气体浓度趋向均匀,大大提高了源气体的利用效率,显著提高了沉积品质。The source gas reaches the gas mixing chamber through the gas inlet device 2, and reaches the deposition chamber 5 through the hole 6 on the splitter plate 4. Since the inner diameter of the hole close to the central axis of the splitter plate is relatively small and the inclination angle is large, it is avoided that the deposition chamber is close to the center of the splitter plate. The gas concentration in the local space of the axis is too high. At the same time, the inner diameter of the hole away from the central axis of the splitter plate is thicker and the inclination angle is smaller, so the gas concentration in the local space close to the central axis of the splitter plate is prevented from being too small. The gas concentration in the deposition chamber tends to be uniform, which greatly improves the utilization efficiency of the source gas and significantly improves the deposition quality.

需要说明的是,在本文中,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。It should be noted that, in this document, the terms "comprising", "comprising" or any other variation thereof are intended to cover a non-exclusive inclusion such that a process, method, article or apparatus comprising a set of elements includes not only those elements, It also includes other elements not expressly listed, or elements inherent in the process, method, article, or apparatus.

本文中应用了具体个例对本实用新型的原理及实施方式进行了阐述,以上实例的说明只是用于帮助理解本实用新型的方法及其核心思想。以上仅是本实用新型的优选实施方式,应当指出,由于文字表达的有限性,而客观上存在无限的具体结构,对于本技术领域的普通技术人员来说,在不脱离本实用新型原理的前提下,还可以做出若干改进、润饰或变化,也可以将上述技术特征以适当的方式进行组合;这些改进润饰、变化或组合,或未经改进将实用新型的构思和技术方案直接应用于其它场合的,均应视为本实用新型的保护范围。In this paper, specific examples are used to illustrate the principle and implementation of the present invention. The description of the above examples is only used to help understand the method and core idea of the present invention. The above are only preferred embodiments of the present utility model. It should be pointed out that due to the limitation of literal expression, there are objectively unlimited specific structures. Under these conditions, several improvements, modifications or changes can also be made, and the above-mentioned technical features can also be combined in an appropriate manner; these improvements, modifications, changes or combinations, or the ideas and technical solutions of the utility model can be directly applied to other Occasions, all should be regarded as the protection scope of the present utility model.

Claims (7)

1.一种带分流盘的CVD沉积炉装置,其特征在于,包括炉体(1)、进气装置(2)、混气室(3)、分流盘(4)和沉积室(5),所述进气装置(2)、混气室(3)、分流盘(4)和沉积室(5)依次分布,均与所述炉体(1)连接,所述分流盘(4)顶面靠近所述进气装置(2),所述分流盘(4)底面靠近所述沉积室(5),所述分流盘(4)顶面和底面为圆形,顶面半径和底面半径均大于所述分流盘(4)厚度;1. a CVD deposition furnace device with splitter plate, is characterized in that, comprises body of heater (1), gas inlet device (2), gas mixing chamber (3), splitter plate (4) and deposition chamber (5), The air inlet device (2), the gas mixing chamber (3), the distribution plate (4) and the deposition chamber (5) are distributed sequentially, all connected to the furnace body (1), and the top surface of the distribution plate (4) Close to the air inlet device (2), the bottom surface of the splitter tray (4) is close to the deposition chamber (5), the top and bottom surfaces of the splitter tray (4) are circular, and the radius of the top surface and the bottom surface are larger than The thickness of the diverter plate (4); 所述分流盘(4)设有若干个孔洞(6),所述孔洞(6)横截面为圆形或椭圆形,所述孔洞(6)贯穿所述分流盘(4)顶面和底面;The distribution plate (4) is provided with several holes (6), the cross section of the holes (6) is circular or elliptical, and the holes (6) run through the top surface and the bottom surface of the distribution plate (4); 所述孔洞(6)中轴线与所述分流盘(4)顶面的交点到所述分流盘(4)中轴线的距离为所述孔洞顶距,所述孔洞中轴线与所述分流盘(4)底面的交点到所述分流盘(4)中轴线的距离为所述孔洞底距,所述孔洞顶距小于所述孔洞底距;The distance from the intersection point of the central axis of the hole (6) and the top surface of the distribution plate (4) to the central axis of the distribution plate (4) is the distance from the top of the hole, and the central axis of the hole and the distribution plate ( 4) The distance from the intersection point of the bottom surface to the central axis of the diverter plate (4) is the bottom distance of the hole, and the top distance of the hole is smaller than the bottom distance of the hole; 所述孔洞(6)中轴线与所述分流盘(4)中轴线的夹角为所述孔洞倾角,所述孔洞倾角与所述孔洞顶距呈负相关,所述孔洞(6)横截面内径周长与所述孔洞顶距呈正相关。The included angle between the central axis of the hole (6) and the central axis of the splitter plate (4) is the hole inclination, and the hole inclination is negatively correlated with the distance from the top of the hole, and the inner diameter of the cross section of the hole (6) is The perimeter is positively correlated with the distance from the top of the hole. 2.如权利要求1所述的带分流盘的CVD沉积炉装置,其特征在于,所述分流盘(4)顶面直径为500mm~1200mm,底面直径为500mm~1200mm,厚度为10mm~30mm。2 . The CVD deposition furnace device with a splitter plate according to claim 1 , wherein the splitter plate ( 4 ) has a top diameter of 500 mm to 1200 mm, a bottom diameter of 500 mm to 1200 mm, and a thickness of 10 mm to 30 mm. 3.如权利要求1所述的带分流盘的CVD沉积炉装置,其特征在于,所述孔洞(6)横截面内径周长为45mm~120mm。3. The CVD deposition furnace device with a splitter plate according to claim 1, characterized in that, the inner diameter and circumference of the cross section of the hole (6) are 45mm-120mm. 4.如权利要求1所述的带分流盘的CVD沉积炉装置,其特征在于,所述孔洞倾角为0°~35°。4 . The CVD deposition furnace device with a diverter plate according to claim 1 , wherein the inclination angle of the holes is 0°˜35°. 5.如权利要求1所述的带分流盘的CVD沉积炉装置,其特征在于,所述孔洞(6)中轴线与所述分流盘(4)中轴线的距离小于10mm。5. The CVD deposition furnace device with a splitter plate according to claim 1, characterized in that the distance between the central axis of the hole (6) and the central axis of the splitter plate (4) is less than 10mm. 6.如权利要求1所述的带分流盘的CVD沉积炉装置,其特征在于,所述孔洞(6)数量为20~50个。6. The CVD deposition furnace device with a splitter plate according to claim 1, characterized in that, the number of said holes (6) is 20-50. 7.如权利要求1所述的带分流盘的CVD沉积炉装置,其特征在于,所述分流盘(4)材质为石墨或C/C复合材料。7. The CVD deposition furnace device with a splitter plate as claimed in claim 1, wherein the splitter plate (4) is made of graphite or C/C composite material.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111394714A (en) * 2020-04-21 2020-07-10 重庆臻宝实业有限公司 Chemical deposition gas distribution structure and device thereof
CN113235068A (en) * 2021-04-07 2021-08-10 深圳市华星光电半导体显示技术有限公司 Chemical vapor deposition device
CN113265646A (en) * 2021-06-16 2021-08-17 中南大学 CVD deposition furnace device for preparing large-size C/C composite material
CN115508291A (en) * 2022-11-08 2022-12-23 浙江浙大鸣泉科技有限公司 Optical gas detection device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111394714A (en) * 2020-04-21 2020-07-10 重庆臻宝实业有限公司 Chemical deposition gas distribution structure and device thereof
CN113235068A (en) * 2021-04-07 2021-08-10 深圳市华星光电半导体显示技术有限公司 Chemical vapor deposition device
CN113235068B (en) * 2021-04-07 2023-09-01 深圳市华星光电半导体显示技术有限公司 Chemical vapor deposition device
CN113265646A (en) * 2021-06-16 2021-08-17 中南大学 CVD deposition furnace device for preparing large-size C/C composite material
CN115508291A (en) * 2022-11-08 2022-12-23 浙江浙大鸣泉科技有限公司 Optical gas detection device

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