CN211348702U - A Micro-ring Integrated Arrayed Waveguide Grating Wavelength Division Multiplexer - Google Patents

Abstract

The utility model relates to a micro-ring integrated arrayed waveguide grating wavelength division multiplexer, which belongs to the technical field of semiconductor optical signal transmission. The micro-ring integrated arrayed waveguide grating wavelength division multiplexer includes, from bottom to top, a silicon substrate, an isolation layer, a waveguide layer, an upper cladding layer, a heating electrode and electrode leads, and the waveguide layer includes an arrayed waveguide grating, a number of transmission A waveguide and several micro-ring resonant filters, the arrayed waveguide grating is provided with several output waveguides, each output waveguide is connected to a micro-ring resonant filter through a transmission waveguide, and several output waveguides in the arrayed waveguide grating pass through several The transmission waveguide is connected with several micro-ring resonant filters to form a micro-ring integrated arrayed waveguide grating wavelength division multiplexer. The utility model can not only perform primary filtering by AWG and secondary filtering by a micro-ring resonant filter to obtain excellent crosstalk characteristics, but also ensure that the total loss of the device is equivalent to that of a single AWG.

Description

A Micro-ring Integrated Arrayed Waveguide Grating Wavelength Division Multiplexer

technical field

The utility model relates to a micro-ring integrated arrayed waveguide grating wavelength division multiplexer, which belongs to the technical field of semiconductor optical signal transmission.

Background technique

The generation and development of optical fibers have enabled long-distance, large-capacity optical communications to be realized. Due to the characteristics of low transmission loss, wide bandwidth, anti-electromagnetic interference, good transmission quality and good confidentiality of optical communication, it is widely favored by people. With the advancement of technology such as computer and multimedia communication, the amount of information transmission is increasing day by day, which promotes the development of optical communication technology in the direction of large capacity, long distance, wavelength division multiplexing, optical fiber technology, and optical amplification. The wavelength division multiplexer is the key component of the wavelength division multiplexing technology and also the key component in the optical fiber communication system. Optical wavelength division multiplexer is a device that separates and combines wavelengths of light waves. Silicon photonics technology compatible with CMOS technology is developing rapidly. Silicon photonics devices have the characteristics of small size and low power consumption, and can be monolithically integrated with IC devices, enabling large-scale production and multi-functional integration. SOI materials have excellent optical properties and are compatible with CMOS integrated circuit technology, which can reduce the cost of photonic integrated devices. Therefore, silicon-on-insulator (SOI) CMOS silicon photonics technology is a research hotspot in the field of optical fiber communication. The refractive index difference between the silicon of the SOI substrate as the core layer of the waveguide and the buried oxide layer _SiO2 is as high as 40%, which can achieve strong optical confinement in the waveguide. There are currently four wavelength division multiplexers in silicon photonics: etched diffraction grating (EDG), micro-ring resonator (MRR), cascaded MZI and arrayed waveguide grating (AWG). Among them, the etched diffraction grating cannot achieve dense wavelength division multiplexing, and the scope of application is limited; the micro-ring resonant filter uses the resonant wavelength to achieve demultiplexing, and needs to cascade micro-rings of different radii, which are affected by the process and have a stable wavelength interval. It is difficult to control, and generally requires thermal tuning of the microring, which increases power consumption; MZI realizes wavelength division multiplexing through the difference in arm length. When the number of channels is large, with the increase of the number of cascades, the chip size will increase exponentially, which is not suitable Demultiplexing with a larger number of channels. Therefore, the three silicon photonic devices are not widely used in the field of wavelength division multiplexing. Silicon photonic arrayed waveguide grating is a wavelength division multiplexer/demultiplexer with the best comprehensive performance, which plays an important role in many dense wavelength division multiplexing (DWDM) systems and modules. At present, commercial AWGs based on silica waveguides have achieved hundreds of channels, and the channel spacing can reach 1GHz. With the development of technology, the requirements for transmission rate and device power consumption are becoming more and more stringent. Although silicon photonics devices are highly integrated and small in size, they also limit the performance of some key devices. The crosstalk of silicon photonic AWG mainly comes from the fact that the response spectrum is greatly affected by the width of the arrayed waveguide after the device size is extremely reduced, resulting in poor crosstalk performance of AWG devices, which cannot be applied on a large scale.

SUMMARY OF THE INVENTION

Aiming at the above problems and deficiencies in the prior art, the utility model provides an arrayed waveguide grating wavelength division multiplexer integrated with a micro-ring. The utility model realizes secondary filtering by integrating a micro-ring resonant filter at the output end of the silicon photonic AWG. Through the operation of the wavelength tuning system, the resonant wavelength of the micro-ring resonator filter is adjusted so that the resonant wavelength is consistent with the corresponding output wavelength of the silicon-optical AWG output channel connected to it, so that the output wavelength signal of the arrayed waveguide grating can be further filtered to achieve low crosstalk characteristics. , effectively solve the problem of poor crosstalk performance of silicon photonic AWG devices, the utility model is realized by the following technical solutions.

A micro-ring integrated arrayed waveguide grating wavelength division multiplexer, from bottom to top, includes a silicon substrate, an isolation layer, a waveguide layer, an upper cladding layer, a heating electrode and electrode leads, and the waveguide layer includes an arrayed waveguide grating 110, several A number of transmission waveguides 120 and a number of micro-ring resonant filters 130, the arrayed waveguide grating 110 is provided with a number of output waveguides 5, each output waveguide 5 is connected to a micro-ring resonant filter 130 through a transmission waveguide 120, the arrayed waveguide grating A plurality of output waveguides 5 in 110 are sequentially connected to a plurality of micro-ring resonator filters 130 through a plurality of transmission waveguides 120 to form a micro-ring integrated arrayed waveguide grating wavelength division multiplexer.

The arrayed waveguide grating 110 includes an input waveguide 1 , an input slab waveguide 2 , an arrayed waveguide 3 , an output slab waveguide 4 and an output waveguide 5 . The input waveguide 1 is connected to the input slab waveguide 2 , and the input slab waveguide 2 is connected to the output slab waveguide through the array waveguide 3 . 4. The input slab waveguide 2 and the output slab waveguide 4 are arranged in a Rowland circle structure, and the output slab waveguide 4 is connected to the output waveguide 5 .

The number of the input waveguides 1 and the output waveguides 5 is an arbitrary positive integer, the number of the output waveguides 5 is an arbitrary positive integer according to the needs of wavelength division multiplexing, and the number of the array waveguides 3 is determined by the device structure design.

The micro-ring resonant filter 130 includes an input straight waveguide 131 , a ring resonator 132 , a wavelength tuning structure 11 and an output straight waveguide 133 . In the region 10 , there is a second coupling region 12 between the output straight waveguide 133 and the ring resonator 132 located on the upper part of the output straight waveguide 133 .

The FSR of the free spectrometer region of the microring resonator filter 130 is greater than the interval between adjacent channels of the arrayed waveguide grating 110 .

The resonant wavelength of each micro-ring resonant filter of the micro-ring resonant filter 130 must be the same as or similar to the center wavelength of the optical signal output by the output waveguide 5 of the connected arrayed waveguide grating 110 .

The input straight waveguide 131 of the microring resonant filter 130 is divided into an input straight waveguide input end 6 and an input straight waveguide straight output end 7 , and the output straight waveguide 133 is divided into an output straight waveguide download end 8 and an output straight waveguide upload end 9 . Optical signals of different wavelengths are input from the input end 6 of the input straight waveguide 131, and are coupled into the ring resonator 132 in the first coupling region 10. When the optical signal is transmitted in the ring resonator 132, only wavelengths that satisfy the resonance conditions cause resonance in the ring. It is coupled into the output straight waveguide 133 in the second coupling region 12 and output from the download terminal 8 .

The wavelength tuning structure 11 of the micro-ring resonator filter 130 is a heater that acts on the ring resonator 132 and is connected to a driving power supply, located in the waveguide layer and formed by ion (Ni ion) doping (NiSi), or located in the SiO of the waveguide. ₂ The upper cladding layer is composed of a high resistance material (TiN or TaN, etc.). The wavelength tuning structure 11 based on the thermo-optic/electro-optic effect can change the resonant wavelength of the micro-ring resonant filter 130 under the action of the driving power, so that it is consistent with the wavelength of the output optical signal corresponding to the output channel of the arrayed waveguide grating 110, so as to realize the secondary signal of the signal. filter.

The working principle of the arrayed waveguide grating wavelength division multiplexer integrated with the microring is as follows: based on the principle of the arrayed waveguide grating, a beam of optical signals with multiple wavelengths enters the input slab waveguide 2 from the input waveguide 1 of the arrayed waveguide grating 110, Diffraction in the slab waveguide is coupled into the arrayed waveguide 3 in equal phase. Due to the fixed length difference between adjacent arrayed waveguides 3, light of different wavelengths is transmitted through the arrayed waveguide 3 and focused on different positions of the output slab waveguide 4. Each output port outputs wavelength signals with a certain channel interval (Δλ) to realize the first filtering. Due to reasons such as the preparation process, there is actually crosstalk between adjacent channels. In order to reduce this part of the crosstalk, a micro-ring resonator filter 130 is integrated at the output end of the arrayed waveguide grating, and the wavelength signal output by the arrayed waveguide grating 110AWG and interacting with the ring resonator is directly guided by the output of the micro-ring resonant filter 130 to the downstream 9 output to achieve secondary filtering to achieve the purpose of reducing crosstalk. In order to ensure the secondary filtering, it is necessary to make the resonance wavelength of the microring correspond to the wavelength of the optical signal output by the arrayed waveguide grating 110 . The refractive index of the waveguide of the micro-ring resonator filter can be changed by the thermo-optic/electro-optic effect, thereby modulating the resonant wavelength to ensure that the resonant wavelength of the micro-ring resonator filter is consistent with the wavelength of the AWG output. To ensure the feasibility of this solution, the free spectral region (FSR) of the microring resonator filter 130 needs to be designed so that the free spectral region (FSR) is larger than the channel spacing (Δλ) of the output signal of the arrayed waveguide grating 10 . Due to the extremely low insertion loss of the microring resonator, the total loss of this device is similar to that of a single AWG device, resulting in excellent low crosstalk characteristics without significantly increasing the overall loss of the device.

The process flow diagram of the arrayed waveguide grating wavelength division multiplexer integrated with the microring is shown in FIG. 4 . Using semiconductor SOI wafer, based on CMOS fabrication process, the main integration process flow is as follows.

Step 1: As shown in Figure 4-1, the device is based on SOI wafers. After photolithography and exposure, the structure patterns of arrayed waveguide gratings, transmission waveguides, and microring resonant filters are formed; then Si shallow etching process is used to form the preliminary structures of ridge waveguides of arrayed waveguide gratings, transmission waveguides, and microring resonant filters, such as shown in Figure 4-2.

Step 2: Use secondary lithography, exposure and Si etching processes to prepare complete ridge and strip waveguide structures, and complete arrayed waveguide gratings, micro-ring resonant filters and transmission waveguide structures, as shown in Figure 4-3 .

Step 3: After cleaning, a thick SiO ₂ cladding layer is deposited over the silicon photonic waveguide by the PECVD deposition method, and a flat upper surface is obtained by reverse SiO ₂ etching and polishing, as shown in Figure 4-4.

Step 4: Deposit TiN metal on the surface of SiO ₂ by PVD, and form a heating electrode by photolithography and dry etching technology. After completion, deposit a layer of SiO ₂ on the TiN electrode by PECVD method, as shown in Figure 4-5.

Step 5: Prepare lead holes above the heated TiN electrodes through photolithography, exposure and SiO ₂ etching processes, and stop etching to the TiN metal to form metal deposition holes, as shown in Figure 4-6.

Step 6: Finally, the metal lead material Al is deposited by PVD, and the metal lead pattern is formed by photolithography/etching technology, as shown in Figure 4-7.

Through the above process, an arrayed waveguide grating wavelength division multiplexer integrated with microrings can be fabricated on an SOI wafer.

The beneficial effects of the present utility model are:

The silicon-based array waveguide grating and the micro-ring resonant filter used in the utility model are small in size, easy to integrate, simple and mature in preparation process; only one micro-ring resonant filter and a wavelength tuning structure are added to the device, and the introduced power consumption is small; The insertion loss of the micro-ring resonator filter is extremely small. It can not only perform primary filtering by AWG and secondary filtering by micro-ring resonant filter to obtain excellent crosstalk characteristics, but also ensure that the total loss of the device is equivalent to that of a single AWG. The device has a wide range of applications in the field of wavelength division multiplexing of optical communications.

Description of drawings

1 is a schematic diagram of the connection of an arrayed waveguide grating wavelength division multiplexer integrated with a micro-ring of the present invention;

FIG. 2 is a schematic diagram of the structure of the arrayed waveguide grating of the present invention;

3 is a schematic structural diagram of the micro-ring resonant filter of the present invention;

Fig. 4 is the process flow chart of the utility model micro-ring resonant filter waveguide upper cladding heating electrode process;

FIG. 5 is a flow chart of the processing flow of the heating electrode of the waveguide layer of the micro-ring resonant filter of the present invention.

In the figure: 1-input waveguide, 2-input slab waveguide, 3-array waveguide, 4-output slab waveguide, 5-output waveguide, 6-input straight waveguide input end, 7-input straight waveguide straight output end, 8-output Straight waveguide download end, 9-output straight waveguide upload end, 10-first coupling region, 11-wavelength tuning structure, 12-second coupling region, 110-array waveguide grating, 120-transmission waveguide, 130-microring resonance filter 131-input straight waveguide, 132-ring resonator, 133-output straight waveguide.

Detailed ways

The present utility model will be further described below with reference to the accompanying drawings and specific embodiments.

Example 1

As shown in Fig. 1 to Fig. 3, the micro-ring integrated arrayed waveguide grating WDM multiplexer is based on SOI wafer, and includes a substrate layer, a buried oxide layer, a waveguide layer and a SiO ₂ upper cladding layer from top to bottom. The waveguide layer respectively includes an arrayed waveguide grating 110 (AWG), a transmission waveguide 120 and a micro-ring resonant filter 130 (MRR).

The arrayed waveguide grating 110 includes an input waveguide 1 , an input slab waveguide 2 , an arrayed waveguide 3 , an output slab waveguide 4 and an output waveguide 5 . The input waveguide 1 is connected to the input slab waveguide 2 , and the input slab waveguide 2 is connected to the output slab waveguide 4 through the array waveguide 3 . , the input slab waveguide 2 and the output slab waveguide 4 are arranged in a Rowland circle structure, and the output slab waveguide 4 is connected to the output waveguide 5 . A beam of optical signals with different wavelengths enters the input slab waveguide 2 from the input waveguide 1 and is diffracted. After passing through the array waveguide 3, the different wavelengths of light are focused at different positions on the output slab waveguide 4. Finally, they are output through the output waveguide 5 to realize the first signal Secondary filtering; the micro-ring resonator filter 130 includes an input straight waveguide 131, a ring resonator 132, a wavelength tuning structure 11 and an output straight waveguide 133. There is a first coupling region 10 between the input straight waveguide 131 and the ring resonator 132, and the ring resonator There is a second coupling region 12 between 132 and the output straight waveguide 133 . The input straight waveguide 131 is divided into an input straight waveguide input end 6 and an input straight waveguide straight output end 7 , and the output straight waveguide 133 is divided into a download end 8 and an upload end 9 . The optical signal transmitted through the transmission waveguide 120 is input from the input end 6 of the input straight waveguide 131 , and is coupled into the ring resonator 132 in the first coupling region 10 , and the wavelength satisfying the resonance condition causes resonance in the ring and is coupled in the second coupling region 12 Enter the output straight waveguide 133 and output from the download terminal 8 to realize the secondary filtering of the demultiplexed signal. The wavelength tuning structure 11 based on the thermo-optic effect can match the resonant wavelength of the micro-ring resonant filter 130 with the wavelength of the corresponding output channel signal of the AWG under the action of the driving power supply. In this example, since the channel interval of the AWG is fixed, the design of each micro-ring resonator filter is exactly the same, and the wavelength tuning structure ensures that the resonant wavelength of each micro-ring resonator filter is consistent with the center wavelength of the output signal of the AWG output channel, And its free spectral region is larger than the channel spacing of the AWG output signal. In this wavelength tuning structure, the heating electrode is located on the waveguide, and the SiO ₂ upper cladding layer is made of high-resistance material TiN.

The arrayed waveguide grating 110, the transmission waveguide 120 and the microring resonator filter 130 are all on the same top layer silicon of the SOI wafer. The SOI wafer size is 8 inches, the wafer thickness is 725µm, the buried oxide layer thickness is 2µm, and the top silicon thickness is 220nm. The arrayed waveguide 3 of the arrayed waveguide grating 110 is a ridge waveguide with a width of 450 nm and an etching depth of 100 nm. The length difference of the arrayed waveguide 3 is 12.95 µm, the Rowland circle radius is 89.3 µm, the minimum complete radius is 50 µm, and the diffraction order is 20. The channel spacing is 6.4 nm. The transmission waveguide 120 is a ridge waveguide with a width of 450 nm and a height of 200 nm. The input waveguide 131 and the output waveguide 133 of the micro-ring resonator filter 130 are both strip-shaped waveguides with a width of 450 nm, and the ring resonator 132 and the coupling region (the first coupling region 10 and the second coupling region 12 ) are both 450 nm wide and etched. The ridge waveguide with an etching depth of 100nm, the minimum distance between the input/output waveguide and the ring resonator is 200nm, the diameter of the ring resonator is 23µm, and the FSR of the free spectral region is 6.8nm. The waveguide structure of the device of the present invention is fabricated on the SOI wafer through multiple lithography/etching semiconductor processes. After the waveguide is formed, a 1.5µm thick SiO ₂ upper cladding layer is deposited by the PECVD process, and reversely etched. and polishing process to obtain a flat and smooth surface (as shown in Figure 4-1 to Figure 4-4); on this smooth surface, a layer of 110nm thick high-resistance material TiN is deposited by PVD technology, and TiN is formed by photolithography/etching The heating electrode (shown in Figure 4-5) is a foldback distribution structure with a width of 5µm and a total length of 200µm. A 450nm-thick _SiO2 isolation layer is deposited on the TiN electrode material by PECVD process; photolithography/etching technology is used on the top of the TiN electrode The heating electrode lead hole (shown in Figure 4-6) is formed, and the lead hole etching stops on the TiN heating electrode; finally, a 2µm metal lead material Al is deposited by PVD technology, and the Al material is connected to the TiN heating electrode, and is lithography. The Al metal wire with a width of 10µm is formed by /etching technology (as shown in Figure 4-7). The terminal structure of the Al metal wire and the probe contact is a square with a side length of 70µm.

Example 2

As shown in Figures 1 to 3, the micro-ring integrated arrayed waveguide grating WDM multiplexer is based on SOI wafer, which includes a substrate layer, a buried oxide layer, a waveguide layer and an _SiO2 upper cladding layer from bottom to top, the waveguide layer There are respectively an arrayed waveguide grating 110 (AWG), a transmission waveguide 120 and a micro-ring resonant filter 130 (MRR).

The arrayed waveguide grating 110 includes an input waveguide 1 , an input slab waveguide 2 , an arrayed waveguide 3 , an output slab waveguide 4 and an output waveguide 5 . The input waveguide 1 is connected to the input slab waveguide 2 , and the input slab waveguide 2 is connected to the output slab waveguide 4 through the array waveguide 3 . , the input slab waveguide 2 and the output slab waveguide 4 are arranged in a Rowland circle structure, and the output slab waveguide 4 is connected to the output waveguide 5 . A beam of optical signals with different wavelengths enters the input slab waveguide 2 from the input waveguide 1 and is diffracted. After passing through the array waveguide 3, the different wavelengths of light are focused at different positions on the output slab waveguide 4. Finally, they are output through the output waveguide 5 to realize the first signal The micro-ring resonator filter 130 includes an input straight waveguide 131, a ring resonator 132, an output straight waveguide 133 and a wavelength tuning structure 11. There is a first coupling region 10 between the input straight waveguide 131 and the ring resonator 132. The ring resonator There is a second coupling region 12 between 132 and the output straight waveguide 133 . The input straight waveguide 131 is divided into an input straight waveguide input end 6 and an input straight waveguide straight output end 7 , and the output straight waveguide 133 is divided into a download end 8 and an upload end 9 . The optical signal transmitted through the transmission waveguide 120 is input from the input end 6 of the input straight waveguide 131 , and is coupled into the ring resonator 132 in the first coupling region 10 , and the wavelength satisfying the resonance condition causes resonance in the ring and is coupled in the second coupling region 12 Enter the output straight waveguide 133 and output from the download terminal 8 to realize the secondary filtering of the demultiplexed signal. The wavelength tuning structure 11 based on the thermo-optic effect can make the resonance wavelength of the micro-ring resonant filter 130 match the wavelength of any output channel signal of the AWG under the action of the driving power supply. In this example, since the channel interval of the AWG is fixed, the design of each micro-ring resonant filter is exactly the same. The wavelength tuning structure ensures that the resonant wavelength of each device is consistent with the output wavelength of the AWG, and its free spectral region is larger than that of the AWG. channel spacing. The heating electrode of this wavelength tuning structure is located in the waveguide Si layer and is formed by doping with Ni ions (NiSi).

The low crosstalk wavelength division multiplexer is based on an SOI wafer, and the arrayed waveguide grating 110 (AWG), transmission waveguide 120, and microring resonator filter 130 (MRR) are all on the same top layer silicon of the SOI wafer. The SOI wafer size is 8 inches, the wafer thickness is 725µm, the buried oxide layer thickness is 2µm, and the top silicon thickness is 220nm. The arrayed waveguide grating is composed of a ridge waveguide with an arrayed waveguide width of 400nm and an etching depth of 110nm. The length difference of the arrayed waveguide is 7.243µm, the Rowland circle radius is 268.76µm, the minimum complete radius is 75µm, the diffraction order is 8, and the channel spacing is 8 is 6.8nm. A ridge waveguide with a width of 400 nm and a height of 220 nm was transmitted. The input/output waveguides of the microring resonator filter are both ridge waveguides with a width of 450 nm. The resonant cavity and coupling region of the microring resonator filter are both ridge waveguides with a width of 450nm and an etching depth of 110nm. The minimum distance between the input/output waveguide and the microring resonator waveguide is 150nm, and the diameter of the microring resonator is 31.25µm. , the free spectral region FSR is 6.4nm. The process of the device is shown in Figure 5, and the complete ridge waveguide structure of the device of the present invention is formed by two photolithography/etching semiconductor processes on the SOI wafer (shown in Figure 5-1 to Figure 5-2); After the waveguide is formed, a 300nm thick _SiO2 layer is deposited by PECVD process, and a flat and smooth surface is obtained by reverse etching and polishing process (as shown in Figure 5-3); by exposure, photolithography, cleaning and deposition processes , according to the pattern of the NiSi heater, a window was opened on the slab waveguide of the ring resonator and 20nm Ni was deposited, and annealed at 280°C for 200s, the unreacted Ni was washed away with H ₂ SO ₄ , and the waveguide layer was formed NiSi heating electrodes (shown in Figures 5-4 to 5-5); 10µm metal lead material Al is subsequently deposited on the NiSi electrode by PVD technology, the Al material is connected to the NiSi heating electrode, and the width is formed by photolithography/etching technology It is a 20µm Al metal lead, and the terminal structure of the Al metal lead and the probe contact is a square with a side length of 70µm (as shown in Figure 5-6); finally, a thermally isolated hollow structure is formed by photolithography and etching technology (Figure 5-7). shown).

The specific embodiments of the present utility model have been described in detail above in conjunction with the accompanying drawings, but the present utility model is not limited to the above-mentioned embodiments. Within the scope of knowledge possessed by those of ordinary skill in the art, the present utility model can also be used without departing from the purpose of the present utility model. Various changes are made under the premise.

Claims (8)

1. The utility model provides an integrated array waveguide grating wavelength division multiplexer of microring, from supreme silicon substrate, isolation layer, waveguide layer, upper cladding, heating electrode and the electrode lead of including down which characterized in that: the waveguide layer comprises an arrayed waveguide grating (110), a plurality of transmission waveguides (120) and a plurality of micro-ring resonant filters (130), a plurality of output waveguides (5) are arranged in the arrayed waveguide grating (110), each output waveguide (5) is connected with one micro-ring resonant filter (130) through one transmission waveguide (120), and the plurality of output waveguides (5) in the arrayed waveguide grating (110) are connected with the plurality of micro-ring resonant filters (130) through the plurality of transmission waveguides (120) in sequence to form the micro-ring integrated arrayed waveguide grating wavelength division multiplexer.

2. The micro-ring integrated arrayed waveguide grating multiplexer of claim 1, wherein: the arrayed waveguide grating (110) comprises an input waveguide (1), an arrayed waveguide (3) and an output waveguide (5), the input waveguide (1) comprises an input flat waveguide (2), the output waveguide (5) comprises an output flat waveguide (4), the input waveguide (1) is connected with the input flat waveguide (2), the input flat waveguide (2) is connected with the output flat waveguide (4) through the arrayed waveguide (3), the input flat waveguide (2) and the output flat waveguide (4) are arranged into a Rowland circle structure, and the output flat waveguide (4) is connected with the output waveguide (5).

3. The micro-ring integrated arrayed waveguide grating multiplexer of claim 2, wherein: the number of the input waveguides (1) and the number of the output waveguides (5) are any positive integer.

4. The micro-ring integrated arrayed waveguide grating multiplexer of claim 1, wherein: the micro-ring resonant filter (130) comprises an input straight waveguide (131), a ring-shaped resonant cavity (132), a wavelength tuning structure (11) and an output straight waveguide (133), wherein a first coupling area (10) is arranged between the input straight waveguide (131) and the ring-shaped resonant cavity (132) positioned at the lower part of the input straight waveguide (131), and a second coupling area (12) is arranged between the output straight waveguide (133) and the ring-shaped resonant cavity (132) positioned at the upper part of the output straight waveguide (133).

5. The micro-ring integrated arrayed waveguide grating multiplexer of claim 4, wherein: the free spectrometer area FSR of the micro-ring resonator filter (130) is larger than the adjacent channel spacing of the arrayed waveguide grating (110).

6. The micro-ring integrated arrayed waveguide grating multiplexer of claim 4, wherein: the resonance wavelength of each micro-ring resonance filter of the micro-ring resonance filter (130) is required to be the same as or close to the central wavelength of the optical signal output by the output waveguide (5) of the connected arrayed waveguide grating (110).

7. The micro-ring integrated arrayed waveguide grating multiplexer of claim 4, wherein: an input straight waveguide (131) of the micro-ring resonant filter (130) is divided into an input straight waveguide input end (6) and an input straight waveguide output end (7), and an output straight waveguide (133) is divided into an output straight waveguide download end (8) and an output straight waveguide upload end (9).

8. The micro-ring integrated arrayed waveguide grating multiplexer of claim 4, wherein: the wavelength tuning structure (11) of the micro-ring resonator filter (130) is a heater which acts on the ring resonator (132) and is connected with a driving power supply, is positioned on the waveguide layer and is formed by ion doping, or is positioned on SiO of the waveguide₂The upper cladding layer is made of a high-resistance material.

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