CN108227084A - Unrelated integrated optical switch of a kind of polarization based on silicon nitride waveguides and preparation method thereof - Google Patents
Unrelated integrated optical switch of a kind of polarization based on silicon nitride waveguides and preparation method thereof Download PDFInfo
- Publication number
- CN108227084A CN108227084A CN201810039337.1A CN201810039337A CN108227084A CN 108227084 A CN108227084 A CN 108227084A CN 201810039337 A CN201810039337 A CN 201810039337A CN 108227084 A CN108227084 A CN 108227084A
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- microns
- optical switch
- nitride waveguides
- integrated optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/35—Optical coupling means having switching means
- G02B6/354—Switching arrangements, i.e. number of input/output ports and interconnection types
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12145—Switch
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of unrelated integrated optical switch of the polarization based on silicon nitride waveguides, including：Silicon-based substrate；Silica buffer layer, is covered in silicon-based substrate；Sandwich layer is plated on silica buffer layer；Silica top covering, is covered on sandwich layer；And sandwich layer waveguide, it is set in sandwich layer, wherein, sandwich layer waveguide includes：Two 3dB directional couplers constitute Mach-Zehnder interferometer, and two 3dB directional couplers are used to implement the impartial beam splitting to TE, TM polarized wave, including：150 microns of S types curved waveguide and 25 microns of straight wave guide and Mach once moral arm straight wave guide, are set between two 3dB directional couplers, for connecting two 3dB directional couplers.One kind of the present invention be based on silicon nitride waveguides obtain polarizing unrelated integrated optical switch have many advantages, such as simple in structure, at low cost, High Extinction Ratio, it is high polarize it is unrelated, with important practical value in optical signal switching process field.
Description
Technical field
The present invention relates to a kind of switches, and in particular to a kind of unrelated integrated optical switch of polarization based on silicon nitride waveguides and its
Production method.
Background technology
In recent years, due to the extension of ultra high-definition video format, the increase of mobile data flow and high in the clouds Method on Dense Type of Data Using
The appearance of service【First technology 1：Kwack M J,Tanemura T,Higo A,et al.Opt.Express.20(27),
28734-41(2012)】, communication network bandwidth and capacity scale quickly increase, and the processing capacity of network node is always " information
The problem to be solved of highway ", based on existing traditional optical signal prosessing device, not only bandwidth, speed encounter bottleneck, institute
The energy of consumption also increased dramatically, and there is an urgent need to the node processing technologies of research and development novel high-capacity, develop ultrahigh speed
The novel integrated opto-electronic device of low energy consumption.Photoswitch is handed between can connecting arbitrary input-output optical fiber without blocking as data
Parallel operation part has the series of advantages such as low insertion loss, repeated height, fast response time, is in data center's optical switching system
One of important device.
In the past few years, due to silicon optoelectronic fast development, the light network using silicon as substrate material broken with
Metal is the interconnection bottleneck of substrate.Using silicon materials as a large amount of 1 × N, the N × N of substrate and M × N photoswitches, crosstalk is presented
The low, excellent characteristics such as switch motion is fast, power consumption is low【First technology 2：H.Zhou,J.Yang,M.Wang,et al.Opt
Letters.37(12),2307(2012)】.Silicon substrate integrated opto-electronic device is due to its maturation compatible with semiconductor CMOS process
Processing method, cheap material cost, excellent photoelectricity hybrid integrated characteristic, it is excellent in energy consumption, performance, size and cost etc.
Gesture is apparent, has important application making photoswitch field.But silicon optical switch or there are many shortcoming, first, silicon optical switch
Can not overcome its due to thermo-optical coeffecient is low and the defects of causing power consumption excessively high.Second, existing silicon substrate photoswitch has very
Strong polarization independent characteristic in the case of Unknown worm light polarization, needs additional Polarization Control device, not only increases slotting
Enter to be lost and improve the complexity of system, its large-scale application is limited.
This silica-base material of silicon nitride has the wide transmission spectrum from visible ray to mid-infrared light, the refractive index with clad
Difference about 0.5 is smaller than silicon-on-insulator refractive index difference (~2) so that waveguide dimensions are in micron dimension, relative reduction processing
Difficulty；It is again bigger than glass of high refractive index planar optical waveguide refractive index difference (~0.1) simultaneously so that device size is relatively small.
Moderate refractive index is with device size but also silicon nitride waveguides, which become, extremely has promising material.Based on silicon nitride material
Optical passive component has been widely studied, such as polarization beam apparatus, grating coupler, high-quality-factor micro-loop, micro- disk device,
But the relevant report for polarizing unrelated integrated optical switch is yet there are no, thus the unrelated integrated optical switch of polarization based on silicon nitride waveguides
It has a good application prospect.
Invention content
The present invention is to carry out to solve the above-mentioned problems, and it is an object of the present invention to provide a kind of polarization based on silicon nitride waveguides
Unrelated integrated optical switch and preparation method thereof.
The present invention provides a kind of unrelated integrated optical switch of the polarization based on silicon nitride waveguides, have the feature that, packet
It includes：Silicon-based substrate；Silica buffer layer, is covered in silicon-based substrate；Sandwich layer is plated on silica buffer layer；Titanium dioxide
Silicon top covering, is covered on sandwich layer；And sandwich layer waveguide, it is set in sandwich layer, wherein, sandwich layer waveguide includes：Two 3dB orientations
Coupler, constitutes Mach-Zehnder interferometer, and two 3dB directional couplers are used to implement the equal decile to TE, TM polarized wave
Beam, including：150 microns of S types curved waveguide and 25 microns of straight wave guide and Mach-Zehnder arm straight wave guide, are set to two
Between 3dB directional couplers, for connecting two 3dB directional couplers.
In the unrelated integrated optical switch of the polarization based on silicon nitride waveguides provided by the invention, there can also be such spy
Sign：Wherein, metal heater is fixed on Mach-Zehnder arm straight wave guide, which is used to that phase to be controlled to realize to defeated
The switching of outbound path.
In the unrelated integrated optical switch of the polarization based on silicon nitride waveguides provided by the invention, there can also be such spy
Sign：Wherein, metal heater is Ti/Au heaters, and thickness is 100/10 nanometer, and area is 250 × 5 square microns.
In the unrelated integrated optical switch of the polarization based on silicon nitride waveguides provided by the invention, there can also be such spy
Sign：Wherein, the thickness of silica buffer layer is 3 microns, refractive index 1.45, and the thickness of silica top covering is 2 microns.
In the unrelated integrated optical switch of the polarization based on silicon nitride waveguides provided by the invention, there can also be such spy
Sign：Wherein, S types curved waveguide, straight wave guide and Mach-Zehnder arm straight wave guide are silicon nitride waveguides, and silicon nitride waveguides reflect
Rate is 2.01, and thickness H is 580 nanometers, and width W is 660 nanometers.
In the unrelated integrated optical switch of the polarization based on silicon nitride waveguides provided by the invention, there can also be such spy
Sign：Wherein, the length of S types curved waveguide is 150 microns, and radius is 406 microns, and the distance of laterally offset is 30 microns.
In the unrelated integrated optical switch of the polarization based on silicon nitride waveguides provided by the invention, there can also be such spy
Sign：Wherein, the length of straight wave guide is 25 microns.
In the unrelated integrated optical switch of the polarization based on silicon nitride waveguides provided by the invention, there can also be such spy
Sign：Wherein, the length of Mach-Zehnder arm straight wave guide is 250 microns.
In the unrelated integrated optical switch of the polarization based on silicon nitride waveguides provided by the invention, there can also be such spy
Sign：Wherein, the integral thickness of the waveguide of 3dB directional couplers is 580 nanometers, and start width is 1 micron, and starting coupling gap is
30 microns, the duct width of the coupling regime of straight wave guide is 0.66 micron, and coupling gap is 0.5 micron.
The present invention also provides a kind of production methods of the unrelated integrated optical switch of polarization based on silicon nitride waveguides, have this
The feature of sample, includes the following steps：
Step 1, under 350 degrees Celsius, by plasma enhanced chemical vapor deposition in 3 microns of formation in silicon-based substrate
Thick silica buffer layer；
Step 2, etching mask of the resist as silicon nitride photonic circuit is coated on silica buffer layer, uses electricity
Beamlet photoetching and plasma etching monitor etching depth in real time, obtain the flat silicon nitride waveguides in surface；
Step 3, silicon nitride waveguides pass through plasma enhanced chemical gas after peroxidating plasma-based and wet chemical technology cleaning
Mutually deposit 2 microns thick of silica top covering；
Step 4, metal heater is attached on Mach-Zehnder arm straight wave guide, polish and cut on the back side with into
Row performance characterization.
The effect of invention
According to unrelated integrated optical switch of the polarization based on silicon nitride waveguides according to the present invention and preparation method thereof, because
The start width of the S type curved waveguides of use is wider, so reducing transmission loss it is achieved thereby that polarization is unrelated, and increases
The tolerance of manufacture.Because the optical coupling of the S type curved waveguides used applies a kind of optical waveguide based on coupled wave pattern theory
Model, so overcoming the numerical value bifurcation problem encountered in common method.Because the Mach-Zehnder arm straight wave guide installation used
Metal heater can control phase by heating electrode, it is achieved thereby that light path switches.Therefore, one kind of the invention is based on nitrogen
SiClx waveguide, which obtains polarizing unrelated integrated optical switch, has many advantages, such as that simple in structure, at low cost, High Extinction Ratio, high polarization are unrelated,
There is important practical value in optical signal switching process field.
Description of the drawings
Fig. 1 is the polarization optical switch independent schematic diagram based on silicon nitride waveguides in the embodiment of the present invention；
Fig. 2 is the schematic cross-section of the three-dB coupler straight wave guide coupling regime in the embodiment of the present invention；
Fig. 3 is coupled waveguide width in the embodiment of the present invention when being 0.66 micron difference coupling length and coupling gap
Contour map is compared in the corresponding output of lower TE, TM polarized wave；
Fig. 4 is the schematic diagram of the unrelated integrated optical switch production process of polarization based on silicon nitride waveguides of the present invention.
Specific embodiment
In order to which the technological means for realizing the present invention is easy to understand with effect, with reference to embodiments and attached drawing is to this
Invention is specifically addressed.
Embodiment：
Fig. 1 is the polarization optical switch independent schematic diagram based on silicon nitride waveguides in the embodiment of the present invention, and Fig. 2 is this hair
The schematic cross-section of three-dB coupler straight wave guide coupling regime in bright embodiment.
As illustrated in fig. 1 and 2, the unrelated integrated optical switch of a kind of polarization based on silicon nitride waveguides of the present embodiment, including：Silicon
Base substrate 1, silica buffer layer 2, two sandwich layers 3, silica top covering 4 and sandwich layer waveguide.
Silica buffer layer 2 is covered in the silicon-based substrate 1.
The thickness of silica buffer layer is 3 microns, refractive index 1.45.
Sandwich layer 3 is plated on the silica buffer layer 2.
Silica top covering 2 is covered on the sandwich layer 3.
The thickness of the silica top covering is 2 microns.
Sandwich layer waveguide is set in the sandwich layer 3.
The sandwich layer waveguide includes：Two 3dB directional couplers 5 and Mach-Zehnder arm straight wave guide 6.
Two 3dB directional couplers 5 constitute Mach-Zehnder interferometer, and described two 3dB directional couplers 5 are for real
Now to the impartial beam splitting of TE, TM polarized wave, including：150 microns of S types curved waveguide and 25 microns of straight wave guide.
The integral thickness of the waveguide of 3dB directional couplers 5 is 580 nanometers, and start width is 1 micron, originates coupling gap
It it is 30 microns, the duct width of the coupling regime of the straight wave guide is 0.66 micron, and coupling gap is 0.5 micron.
S types curved waveguide, the straight wave guide and Mach-Zehnder arm straight wave guide 6 are silicon nitride waveguides, the silicon nitride
Waveguide index is 2.01, and thickness H is 580 nanometers, and width W is 660 nanometers.
The length of S type curved waveguides is 150 microns, and radius is 406 microns, and the distance of laterally offset is 30 microns.
The length of straight wave guide is 25 microns, and the clearance G between straight wave guide is 500 nanometers.
Mach-Zehnder arm straight wave guide 6 is set between described two 3dB directional couplers 5, described two for connecting
3dB directional couplers 5.
The length of Mach-Zehnder arm straight wave guide 6 is 250 microns.
Metal heater 7 is fixed on Mach-Zehnder arm straight wave guide 6, which is used to control phase so as to reality
Now to the switching of outgoing route.
Metal heater 7 is Ti/Au heaters, and thickness is 100/10 nanometer, and area is 250 × 5 square microns.
Fig. 3 is coupled waveguide width in the embodiment of the present invention when being 0.66 micron difference coupling length and coupling gap
Contour map is compared in the corresponding output of lower TE, TM polarized wave.
As shown in figure 3, output ratio is defined as 10 × log (ηIntersection/ηStraightthrough port), wherein, unit is decibel, ηIntersectionFor with it is defeated
Enter the transmissivity of the output waveguide port of waveguide intersection, ηStraightthrough portFor the transmissivity of output waveguide port led directly to input waveguide.
Rtm is expressed as exporting ratio under transverse magnetic wave TM patterns in figure, and Rte is expressed as the output ratio under H mode TE patterns.From the figure 3, it may be seen that
In coupled waveguide width under 0.66 micron thickness, when coupling length and coupling gap are respectively 25 microns and 0.5 micron, the light
TE, TM polarized wave of switch have 0 decibel of output ratio, i.e., intersection output is realized to two polarization states.
Before the unrelated integrated optical switch of polarization based on silicon nitride waveguides is made, variation coupling gap and waveguide are first passed through
Width calculate the strange Effective index of TE, TM pattern respectively and even Effective index passes through formula coupling length Lc=works
Make wavelength/(2 × (the strange moulds of n idol mould-n)) and obtain corresponding coupling length, then close by the index of coupling length and coupling gap
It is Lc=AeBG, fitting coefficient A, B are obtained, the waveguide of different in width can be calculated different plans in cooperation polynomial function
Collaboration number finally obtains for optimizing waveguide and polarizes unrelated 5 parameter of three-dB coupler.Calculate three-dB coupler 5 straight wave guide
Coupling length is 25 microns, and coupling gap is 0.5 micron, and duct width is 0.66 micron.
For in the design of 5 curved waveguide of three-dB coupler：Curved waveguide can be approximately short straight wave guide three-dB coupler, S
The total length of type curved waveguide is 150 microns, there is 30 microns of laterally offset, and radius is about 406 microns, in rising for curved waveguide
Beginning section, duct width are 1 micron, and gap is 30 microns, until straight wave guide coupling regime, the width of curved waveguide gradually becomes 0.66
Micron, coupling gap become 0.5 micron.
The structure of the three-dB coupler 5 of final optimization pass can be achieved TE, TM polarized wave 1 × 2 and divide equally, and realize real
It polarizes unrelated.
Fig. 4 is the schematic diagram of the unrelated integrated optical switch production process of polarization based on silicon nitride waveguides of the present invention.
As shown in figure 4, a kind of production method for obtaining polarizing unrelated integrated switch based on silicon nitride waveguides of the present embodiment,
Include the following steps：
Step 1, it is micro- in forming 3 in silicon-based substrate 1 by plasma enhanced chemical vapor deposition under 350 degrees Celsius
The thick silica buffer layer 2 of rice；
Step 2, etching mask of the resist as silicon nitride photonic circuit is coated on silica buffer layer 2, is used
Electron beam lithography and plasma etching monitor etching depth in real time, obtain the flat silicon nitride waveguides in surface；
Step 3, silicon nitride waveguides pass through plasma enhanced chemical gas after peroxidating plasma-based and wet chemical technology cleaning
Mutually deposit 2 microns thick of silica top covering 4；
Step 4, metal heater 6 is attached on Mach-Zehnder arm straight wave guide 51, polish and cut on the back side with
Carry out performance characterization.
The effect of embodiment
One kind of the present embodiment obtains polarizing unrelated integrated switch and preparation method thereof based on silicon nitride waveguides, because using
S type curved waveguides start width it is wider, so reducing transmission loss it is achieved thereby that polarization is unrelated, and increases manufacture
Tolerance.Because the optical coupling of the S type curved waveguides used applies a kind of optical waveguide model based on coupled wave pattern theory,
So overcome the numerical value bifurcation problem encountered in common method.Because the metal of Mach-Zehnder arm straight wave guide installation used
Heater can control phase by heating electrode, it is achieved thereby that light path switches.Therefore, one kind of the present embodiment is based on nitridation
Silicon waveguide, which obtains polarizing unrelated integrated optical switch, has many advantages, such as that simple in structure, at low cost, High Extinction Ratio, high polarization are unrelated, real
Show that polarization is unrelated, there is important practical value in optical signal switching process field.
Preferred case of the above embodiment for the present invention, is not intended to limit protection scope of the present invention.
Claims (10)
1. a kind of unrelated integrated optical switch of polarization based on silicon nitride waveguides, which is characterized in that including：
Silicon-based substrate；
Silica buffer layer is covered in the silicon-based substrate；
Sandwich layer is plated on the silica buffer layer；
Silica top covering is covered on the sandwich layer；And
Sandwich layer waveguide is set in the sandwich layer,
Wherein, the sandwich layer waveguide includes：
Two 3dB directional couplers, constitute Mach-Zehnder interferometer, and described two 3dB directional couplers are used to implement pair
The impartial beam splitting of TE, TM polarized wave, including：150 microns of S types curved waveguide and 25 microns of straight wave guide and
Mach-Zehnder arm straight wave guide is set between described two 3dB directional couplers, for connecting described two 3dB orientations
Coupler.
2. the unrelated integrated optical switch of the polarization according to claim 1 based on silicon nitride waveguides, it is characterised in that：
Be fixed with metal heater on the Mach-Zehnder arm straight wave guide, the metal heater for control phase so as to fulfill
Switching to outgoing route.
3. the unrelated integrated optical switch of the polarization according to claim 2 based on silicon nitride waveguides, it is characterised in that：
Wherein, the metal heater is Ti/Au heaters, and thickness is 100/10 nanometer, and area is 250 × 5 square microns.
4. the unrelated integrated optical switch of the polarization according to claim 1 based on silicon nitride waveguides, it is characterised in that：
Wherein, the thickness of the silica buffer layer is 3 microns, refractive index 1.45,
The thickness of the silica top covering is 2 microns.
5. the unrelated integrated optical switch of the polarization according to claim 1 based on silicon nitride waveguides, it is characterised in that：
Wherein, the S types curved waveguide, the straight wave guide and Mach-Zehnder arm straight wave guide are silicon nitride waveguides,
The silicon nitride waveguides refractive index is 2.01, and thickness H is 580 nanometers, and width W is 660 nanometers.
6. the unrelated integrated optical switch of the polarization according to claim 1 based on silicon nitride waveguides, it is characterised in that：
Wherein, the length of the S types curved waveguide is 150 microns, and radius is 406 microns, and the distance of laterally offset is 30 microns.
7. the unrelated integrated optical switch of the polarization according to claim 1 based on silicon nitride waveguides, it is characterised in that：
Wherein, the length of the straight wave guide is 25 microns.
8. according to claim 1 obtain polarizing unrelated integrated optical switch based on silicon nitride waveguides, it is characterised in that：
Wherein, the length of the Mach-Zehnder arm straight wave guide is 250 microns.
9. according to claim 1 obtain polarizing unrelated integrated switch based on silicon nitride waveguides, it is characterised in that：
Wherein, the integral thickness of the waveguide of the 3dB directional couplers is 580 nanometers, and start width is 1 micron, starting coupling
Gap is 30 microns, and the duct width of the coupling regime of the straight wave guide is 0.66 micron, and coupling gap is 0.5 micron.
10. a kind of production method for obtaining polarizing unrelated integrated optical switch based on silicon nitride waveguides as described in claim 1-9,
It is characterised in that it includes following steps：
Step 1, under 350 degrees Celsius, by plasma enhanced chemical vapor deposition in 3 microns of formation in the silicon-based substrate
The thick silica buffer layer；
Step 2, etching mask of the resist as silicon nitride photonic circuit is coated on the silica buffer layer, uses electricity
Beamlet photoetching and plasma etching monitor etching depth in real time, obtain the flat silicon nitride waveguides in surface；
Step 3, the silicon nitride waveguides pass through plasma enhanced chemical gas after peroxidating plasma-based and wet chemical technology cleaning
Mutually deposit 2 microns thick of the silica top covering；
Step 4, the metal heater is attached on the Mach-Zehnder arm straight wave guide, polishes and cut on the back side
To carry out performance characterization.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810039337.1A CN108227084A (en) | 2018-01-16 | 2018-01-16 | Unrelated integrated optical switch of a kind of polarization based on silicon nitride waveguides and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810039337.1A CN108227084A (en) | 2018-01-16 | 2018-01-16 | Unrelated integrated optical switch of a kind of polarization based on silicon nitride waveguides and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108227084A true CN108227084A (en) | 2018-06-29 |
Family
ID=62640531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810039337.1A Pending CN108227084A (en) | 2018-01-16 | 2018-01-16 | Unrelated integrated optical switch of a kind of polarization based on silicon nitride waveguides and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108227084A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108919426A (en) * | 2018-07-19 | 2018-11-30 | 湖北捷讯光电有限公司 | A kind of nitridation silicon optical waveguide polarization mode splitter |
| CN109270628A (en) * | 2018-09-28 | 2019-01-25 | 上海理工大学 | A kind of visible light wave range silicon nitride light beam deflection chip |
| CN109738989A (en) * | 2019-03-01 | 2019-05-10 | 苏州科沃微电子有限公司 | 2 × 2 integrated optical switch and manufacturing method led based on silicon planar lightwave |
| CN110187439A (en) * | 2019-05-07 | 2019-08-30 | 南京邮电大学 | A Polarization Independent Beam Splitter |
| CN111427122A (en) * | 2020-05-14 | 2020-07-17 | 上海交通大学 | N×N silicon-based polarization independent optical switch system |
| GB2587071A (en) * | 2019-06-13 | 2021-03-17 | Rockley Photonics Ltd | Multilayer metal stack heater |
| CN113009621A (en) * | 2019-12-19 | 2021-06-22 | 中兴光电子技术有限公司 | Directional coupler and beam splitter thereof |
| CN113238324A (en) * | 2021-04-30 | 2021-08-10 | 吉林大学 | Low-crosstalk optical switch with double MZ structures and optical switch array |
| WO2021184993A1 (en) * | 2020-03-17 | 2021-09-23 | 苏州旭创科技有限公司 | Wavelength division multiplexer and silicon photonic integrated chip |
| CN113484951A (en) * | 2021-07-05 | 2021-10-08 | 吉林大学 | Reconfigurable mode insensitive channel switch for mode division multiplexing system |
| CN113534564A (en) * | 2021-07-14 | 2021-10-22 | 华中科技大学 | A method and device for improving the scanning angle of an optical phased array |
| CN113805398A (en) * | 2021-09-14 | 2021-12-17 | 中国科学院上海微系统与信息技术研究所 | Silicon nitride broadband optical switch |
| CN114384629A (en) * | 2020-10-21 | 2022-04-22 | 格芯(美国)集成电路科技有限公司 | Polarization insensitive directional coupler |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02232631A (en) * | 1989-03-07 | 1990-09-14 | Nippon Telegr & Teleph Corp <Ntt> | Waveguide type optical switch |
| CA2368161A1 (en) * | 2002-01-16 | 2003-07-16 | De-Gui Sun | Low loss and low polarization dependence waveguide variable optical attenuator |
| CN104849878A (en) * | 2015-06-03 | 2015-08-19 | 东南大学 | Silicon nitride waveguide calorescence switch array chip based on Mach-Zahnder structure and production method thereof |
| CN105700074A (en) * | 2016-04-13 | 2016-06-22 | 河南仕佳光子科技股份有限公司 | Polarization-independent cascaded variable optical attenuator |
-
2018
- 2018-01-16 CN CN201810039337.1A patent/CN108227084A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02232631A (en) * | 1989-03-07 | 1990-09-14 | Nippon Telegr & Teleph Corp <Ntt> | Waveguide type optical switch |
| CA2368161A1 (en) * | 2002-01-16 | 2003-07-16 | De-Gui Sun | Low loss and low polarization dependence waveguide variable optical attenuator |
| CN104849878A (en) * | 2015-06-03 | 2015-08-19 | 东南大学 | Silicon nitride waveguide calorescence switch array chip based on Mach-Zahnder structure and production method thereof |
| CN105700074A (en) * | 2016-04-13 | 2016-06-22 | 河南仕佳光子科技股份有限公司 | Polarization-independent cascaded variable optical attenuator |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108919426A (en) * | 2018-07-19 | 2018-11-30 | 湖北捷讯光电有限公司 | A kind of nitridation silicon optical waveguide polarization mode splitter |
| CN108919426B (en) * | 2018-07-19 | 2020-08-04 | 湖北捷讯光电有限公司 | Silicon nitride optical waveguide polarization mode separator |
| CN109270628A (en) * | 2018-09-28 | 2019-01-25 | 上海理工大学 | A kind of visible light wave range silicon nitride light beam deflection chip |
| CN109738989A (en) * | 2019-03-01 | 2019-05-10 | 苏州科沃微电子有限公司 | 2 × 2 integrated optical switch and manufacturing method led based on silicon planar lightwave |
| CN110187439A (en) * | 2019-05-07 | 2019-08-30 | 南京邮电大学 | A Polarization Independent Beam Splitter |
| CN110187439B (en) * | 2019-05-07 | 2020-11-13 | 南京邮电大学 | A polarization independent beam splitter |
| US11262603B2 (en) | 2019-06-13 | 2022-03-01 | Rockley Photonics Limited | Multilayer metal stack heater |
| GB2587071A (en) * | 2019-06-13 | 2021-03-17 | Rockley Photonics Ltd | Multilayer metal stack heater |
| CN113009621A (en) * | 2019-12-19 | 2021-06-22 | 中兴光电子技术有限公司 | Directional coupler and beam splitter thereof |
| US12153260B2 (en) | 2020-03-17 | 2024-11-26 | Innolight Technology (Suzhou) Ltd. | Wavelength division multiplexer and silicon photonic integrated chip |
| WO2021184993A1 (en) * | 2020-03-17 | 2021-09-23 | 苏州旭创科技有限公司 | Wavelength division multiplexer and silicon photonic integrated chip |
| CN111427122A (en) * | 2020-05-14 | 2020-07-17 | 上海交通大学 | N×N silicon-based polarization independent optical switch system |
| CN114384629A (en) * | 2020-10-21 | 2022-04-22 | 格芯(美国)集成电路科技有限公司 | Polarization insensitive directional coupler |
| CN114384629B (en) * | 2020-10-21 | 2023-12-19 | 格芯(美国)集成电路科技有限公司 | Polarization Insensitive Directional Coupler |
| CN113238324A (en) * | 2021-04-30 | 2021-08-10 | 吉林大学 | Low-crosstalk optical switch with double MZ structures and optical switch array |
| CN113484951A (en) * | 2021-07-05 | 2021-10-08 | 吉林大学 | Reconfigurable mode insensitive channel switch for mode division multiplexing system |
| CN113534564A (en) * | 2021-07-14 | 2021-10-22 | 华中科技大学 | A method and device for improving the scanning angle of an optical phased array |
| CN113805398A (en) * | 2021-09-14 | 2021-12-17 | 中国科学院上海微系统与信息技术研究所 | Silicon nitride broadband optical switch |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108227084A (en) | Unrelated integrated optical switch of a kind of polarization based on silicon nitride waveguides and preparation method thereof | |
| JP6198091B2 (en) | Waveguide polarization splitter and polarization rotator | |
| Abdelatty et al. | Compact silicon electro-optical modulator using hybrid ITO tri-coupled waveguides | |
| JP5690902B1 (en) | Substrate type optical waveguide device | |
| Yamada | Silicon photonic wire waveguides: fundamentals and applications | |
| US10585243B2 (en) | High refractive index waveguides and method of fabrication | |
| CN102156375B (en) | Optical logic gate | |
| CN109581586B (en) | Compact structure type silicon nitride wavelength division multiplexing photon chip | |
| US20090180731A1 (en) | Photonic coupler | |
| CN108693602A (en) | A kind of three-dimensionally integrated more microcavity resonator, filter devices of silicon nitride and preparation method thereof | |
| CN106959163B (en) | A kind of TE mould analyzers based on symmetrical three guide directional couplers structure | |
| CN109613632A (en) | Tunable resonant cavity based on flexible surface plasmon coupler and preparation method thereof | |
| CN104280823B (en) | A kind of novel optical isolator based on waveguiding structure | |
| CN113625392A (en) | A 4×4 Optical Switch Array Based on Organic-Inorganic Hybrid Integration | |
| CN104049303A (en) | Adjustable optical resonance device and modulation method of adjustable optical resonance device | |
| CN107407776A (en) | High Refractive Index Contrast Photonic Devices and Their Applications | |
| CN103688203B (en) | Wave vector matched resonator and bus waveguide system | |
| CN208283698U (en) | A kind of optical logic device of the more bit inputs of micro-cavity structure | |
| CN102540626A (en) | Optical waveguide micro-ring resonant cavity-based all-optical logic gate and logic operation method thereof | |
| CN108008486A (en) | Single fiber three-way optical device based on hetero-junction photon crystal coupling cavity waveguide | |
| CN112526675B (en) | W-shaped silicon groove type on-chip polarization rotator based on mode mixing principle | |
| CN112363272B (en) | Tunable three-dimensional silicon nitride double-micro-ring resonant filter device and preparation method thereof | |
| Li et al. | Heuristic inverse design of integrated mode converter by directly reshaping silicon waveguide | |
| CN104090331B (en) | Efficient compact rectangular ring resonant cavity waveguide type optical filter | |
| CN114114681B (en) | A Numerical Design Method for Adiabatic Mode Coupler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180629 |