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CN210130048U - Semiconductor microwave generation module - Google Patents

Semiconductor microwave generation module Download PDF

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Publication number
CN210130048U
CN210130048U CN201920378212.1U CN201920378212U CN210130048U CN 210130048 U CN210130048 U CN 210130048U CN 201920378212 U CN201920378212 U CN 201920378212U CN 210130048 U CN210130048 U CN 210130048U
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China
Prior art keywords
pcb
heat
semiconductor microwave
pcb board
heat dissipation
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CN201920378212.1U
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Chinese (zh)
Inventor
朱泽春
王鹏程
乔中义
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Shandong Jiuchuang Home Appliance Co ltd
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Joyoung Co Ltd
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Priority to CN201920378212.1U priority Critical patent/CN210130048U/en
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Abstract

The utility model discloses a semiconductor microwave generation module, including heat dissipation base, PCB board and transmitting antenna, be provided with at least one device on the PCB board, the PCB board is installed on heat dissipation base, still offers the perforating hole that is used for installing the device on the PCB board, and the device passes the perforating hole, is provided with the radiator in the below of perforating hole, and the radiator is hugged closely the device and is fixed in on the PCB board with it. The utility model discloses a semiconductor microwave generation module adopts unique assembly structure, has realized the two-sided heat dissipation of device and electronic circuit through radiator and heat dissipation copper foil, has promoted the radiating efficiency greatly to corresponding device and electronic circuit have been ensured and can be under stable and lower temperature continuous work.

Description

Semiconductor microwave generation module
Technical Field
The utility model relates to a semiconductor microwave field, more specifically say, relate to a semiconductor microwave generation module.
Background
With the development of microwave technology, semiconductor microwave heating sources are gradually replacing traditional magnetrons and are applied to cooking household appliances, such as microwave ovens and rice cooker products which adopt semiconductor microwave sources for heating. However, the existing semiconductor microwave generation module is not sufficient for microwave leakage, and thus, a user may be exposed to microwave radiation, thereby threatening the health of the user. In addition, the semiconductor microwave generating module includes electronic devices, which are very fragile and sensitive to temperature, and when the semiconductor microwave generating module is not well heat-dissipated, the stability and sensitivity of the electronic devices are affected, and the gas around the devices may exert pressure on electronic circuits and the like after being heated and expanded, which may cause the devices to be damaged by pressure.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a solve the problem that prior art exists, provide a semiconductor microwave generation module, be provided with the perforating hole that is used for installing electronic device on this semiconductor microwave generation module's the PCB board, the device passes through the perforating hole and inlays the dress on the PCB board to set up the radiator in the device below, the rationality of electronic device heat dissipation overall arrangement has fully been considered to whole device, can conduct the heat fast, greatly reduced the probability that electronic device damaged.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a semiconductor microwave generation module comprises a heat dissipation base, a PCB and a transmitting antenna, wherein at least one device is arranged on the PCB, the PCB is installed on the heat dissipation base, a through hole used for installing the device is further formed in the PCB, the device penetrates through the through hole, a radiator is arranged below the through hole, and the radiator is tightly attached to the device and is fixed on the PCB.
Furthermore, at least one surface of the PCB is covered with a heat-dissipating copper foil.
Furthermore, one surface of the PCB close to the radiator is covered with a heat-radiating copper foil, and the radiator and the PCB are fixed through soldering tin arranged on the heat-radiating copper foil.
Furthermore, one side of the PCB close to the radiator is covered with a heat-radiating copper foil, and the radiator is attached to the heat-radiating copper foil and fixed with the PCB.
Furthermore, a groove for accommodating the PCB is formed in the heat dissipation base, a table board for supporting the PCB is arranged in the groove, and the PCB is embedded in the groove.
Furthermore, the table board is provided with a containing cavity matched with the radiator, and the radiator is embedded in the containing cavity and attached to the inner wall of the containing cavity.
Furthermore, the radiating base is provided with radiating fins which are positioned below the table board.
Further, the radiating fins comprise first fins and second fins, the first fins are located at positions corresponding to the containing cavities, the second fins are fins except the first fins, and the length of the first fins is larger than that of the second fins.
Furthermore, a shielding cover is arranged above the PCB and is installed on the heat dissipation base, and the PCB is pressed and fixed on the heat dissipation base.
Furthermore, the area of the PCB covered by the heat dissipation copper foil is provided with through air holes.
The utility model discloses technical scheme's beneficial effect as follows:
the utility model discloses a module takes place for semiconductor microwave through unique mounting means, makes the radiator can closely laminate with the PCB board in direct contact electron device to form good heat dissipation route, can make heat dissipation and transmission fast, ensured that electron device can normally work under the lower temperature.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor microwave generation module according to the present invention;
fig. 2 is a top view of one embodiment of the semiconductor microwave generating module according to the present invention;
fig. 3 is a schematic view of a heat dissipation base in one embodiment of the semiconductor microwave generation module according to the present invention;
fig. 4 is a schematic view illustrating the installation of a device and a heat sink in one embodiment of the semiconductor microwave generating module of the present invention;
Detailed Description
The technical solution provided by the present invention is described in more detail below with reference to the accompanying drawings and specific embodiments:
as shown in fig. 1-4, the present invention relates to a semiconductor microwave generating module in one embodiment of the present invention. In this embodiment, a semiconductor microwave generating module is disclosed, which includes a heat dissipating base 104, a (printed circuit board) PCB 103, and an emitting antenna 105, wherein at least one device is disposed on the PCB 103, the PCB 103 is mounted on the heat dissipating base 104, a through hole for mounting the device is further formed on the PCB 103, a heat sink 114 is disposed below the through hole, and the heat sink 114 is tightly attached to the device and fixes the device to the PCB 103. Including but not limited to power devices and control devices. As shown in fig. 2, the power device includes: a microwave signal generating element 110 and a power amplifier 111; the control device comprises a (micro control unit) MCU109 electrically connected with the power supply circuit and the control circuit.
As shown in fig. 4, a schematic view of the device and the heat sink 114 of one embodiment of the semiconductor microwave generating module according to the present invention is disclosed. In this embodiment, taking the MCU109 as a control device as an example, a through hole is formed in the PCB 103, a heat sink 114 is disposed below the through hole, the MCU109 passes through the through hole and is mounted on the heat sink 114, the bottom of the MCU109 exceeds the lower surface of the PCB 103, and the MCU109 directly contacts the heat sink 114, so that the MCU109 can directly and rapidly conduct the generated heat to the heat sink 114 in an operating state, thereby greatly reducing the operating temperature of the MCU109 itself. The semiconductor microwave generation module in the embodiment adopts a unique device and radiator installation mode, and shortens the existing heat transfer path (device → PCB → radiator) into (device → radiator), thereby greatly improving the heat dissipation efficiency and ensuring that the device can normally work at a lower temperature.
In one embodiment of the semiconductor microwave generating module of the present invention, at least one side of the PCB is covered with a heat dissipating copper foil. In this embodiment, at least one side of the PCB 103 is covered with a heat-dissipating copper foil to further improve heat-dissipating efficiency. Preferably, the front and back surfaces of the PCB 103 are covered with heat-dissipating copper foils, so that heat is dissipated from the upper and lower surfaces of the PCB 103 at the same time, and the heat sink 114 is used to achieve the effect of double-sided heat dissipation.
In one embodiment of the semiconductor microwave generating module, the PCB is close to one side of the heat sink is covered with a heat-dissipating copper foil, and the heat sink is fixed to the PCB by soldering tin disposed on the heat-dissipating copper foil. In this embodiment, as shown in fig. 4, a heat-dissipating copper foil covers a surface of the PCB 103 close to the heat sink 114, that is, a lower surface of the PCB 103 covers the heat-dissipating copper foil, and the heat sink 114 and the PCB 103 are fixed by solder disposed on the heat-dissipating copper foil. Because the soldering tin is arranged on the heat dissipation copper foil, the heat of the device and the electronic circuit can be transferred to the soldering tin through the heat dissipation copper foil and then transferred to the radiator 114, so that on one hand, the quick heat transfer is realized, and on the other hand, the installation and fixation of the device and the radiator 114 are also realized.
In another embodiment of the semiconductor microwave generating module, a surface of the PCB near the heat sink is covered with a heat dissipating copper foil, and the heat sink is attached to the heat dissipating copper foil and the PCB is fixed together. In this embodiment, the heat sink 114 is attached to the heat-dissipating copper foil and fixed to the PCB 103, and since the heat sink 114 is tightly attached to the heat-dissipating copper foil, heat generated by the device and the electronic circuit can be directly transferred to the heat sink 114 through the heat-dissipating copper foil, thereby achieving the purpose of fast dissipation of heat.
In one embodiment of the semiconductor microwave generating module, the heat dissipation base has a recess for holding the PCB, the recess is provided with a table top for supporting the PCB, and the PCB is embedded in the recess. As shown in fig. 3, a groove 120 is formed on the heat dissipation base 104, a table 121 for supporting the PCB 103 is disposed in the groove 120, and the PCB 103 is embedded in the groove 120. In one embodiment, the PCB 103 is further pressed on the heat dissipation base 104 through the shielding frame 102, and the PCB 103 is well fixed and does not slide or fall under the limiting action of the groove 120 and the shielding frame 102.
In one embodiment of the semiconductor microwave generating module, the table top is provided with a cavity matched with the heat sink, and the heat sink is embedded in the cavity and attached to the inner wall of the cavity. In the embodiment shown in fig. 3, the top 121 is provided with an accommodating cavity 122 matching with the heat sink 114, the heat sink 114 is embedded in the accommodating cavity 122, and the side and bottom of the heat sink 114 are closely attached to the accommodating cavity 122, so that heat can be rapidly transferred to the heat dissipation base 104 through the heat sink 114, and finally dissipated to the atmosphere outside the semiconductor microwave generation module through the fins of the heat dissipation base 104, thereby achieving the purpose of cooling the electronic device.
In one embodiment of the semiconductor microwave generating module of the present invention, the heat dissipation base is provided with heat dissipation fins, and the heat dissipation fins are located below the table top. As shown in fig. 3, the heat dissipation base 104 is provided with heat dissipation fins 123, and after the heat is transferred from the heat sink 114 to the heat dissipation base 104, the heat is further dissipated outwards through the heat dissipation fins 123, and the arrangement of the heat dissipation fins 123 greatly increases the heat dissipation area of the heat dissipation base 104, so that the semiconductor microwave generation module has good heat dissipation capability, and stable operation of electronic devices and circuits is ensured.
In one embodiment of the semiconductor microwave generation module, the heat dissipation fins include first fins and second fins, the first fins are located at positions corresponding to the accommodating cavities, the second fins are fins other than the first fins, and the length of the first fins is greater than the second fins. The heat dissipation fin in the embodiment comprises a first fin and a second fin, wherein the upper part of the first fin corresponds to the accommodating cavity of the heat sink, and as the first fin corresponds to the position of the heat sink, the heat at the position is gathered more than that at other positions, and therefore, in order to enable the heat in the region to be discharged to the atmosphere more quickly, the length of the first fin in the embodiment is set to be larger than that of the second fin, so that the heat dissipation is more balanced.
In one embodiment of the semiconductor microwave generating module, a shielding cover is disposed above the PCB, and the shielding cover is mounted on the heat dissipation base and fixes the PCB to the heat dissipation base.
In one embodiment of the semiconductor microwave generating module of the present invention, the through air holes are formed in the area of the PCB covered by the heat dissipating copper foil. As shown in fig. 1, in one embodiment, at least one surface of the PCB 103 is covered with a heat-dissipating copper foil, the PCB 103 is mounted on the heat-dissipating base 104 and the heat-dissipating copper foil is attached to the heat-dissipating base 104, and a through air hole 119 is formed in an area of the PCB 103 covered by the heat-dissipating copper foil. In one embodiment of the present invention, the semiconductor microwave generating module is further provided with a shielding frame 102 and an upper cover plate 101.
In one embodiment of the semiconductor microwave generating module, a shielding cover is disposed above the PCB, and the shielding cover is mounted on the heat dissipation base and fixes the PCB to the heat dissipation base. In one embodiment of the semiconductor microwave generating module of the present invention, the shielding cover is integrally formed, or the shielding cover is formed by enclosing the side vertical plate and the upper cover plate.
As shown in fig. 1, the shielding case in this embodiment includes a shielding frame 102 and an upper cover plate 101, which are formed by side vertical plates, the shielding case is formed by enclosing the side vertical plates, the shielding frame 102 and the upper cover plate 101 are fixed by screw holes, and the two are tightly attached to each other, so as to prevent electromagnetic leakage. In other embodiments, the shield can may also be integrally formed, thereby simplifying the manufacturing and installation process of the shield can. The shielding frame 102 and the upper cover plate 101 are made of metal materials, and microwave interference between devices is blocked by means of an electromagnetic shielding effect. The upper cover plate 101 covers the shielding frame 102, preferably, the upper cover plate 101 is tightly attached to the first isolation rib 108 and the second isolation rib 112, so that the first region 106 and the second region 107 form a sealed cavity, thereby enabling microwave signals and electromagnetic signals between the cavities to be subjected to complementary interference, and ensuring the normal operation of the whole semiconductor microwave generating module.
In one embodiment of the semiconductor microwave generating module of the present invention, the diameter of the air hole is 0.1-2 mm. The diameter of the air hole 119 in this embodiment is 0.1-2mm, and the aperture of the air hole 119 is smaller than 0.1mm, which may obstruct the smooth flow of the air flow and may result in poor heat dissipation effect of the electronic device; if the aperture of the air hole 119 is larger than 2mm, the area occupied by the PCB 103 is large, which affects the wiring of the PCB 103.
In the semiconductor microwave generation module disclosed in this embodiment, the heat dissipation copper foil is disposed on one or both surfaces of the PCB 103, thereby improving heat dissipation efficiency and reducing the probability of heat loss of the device. In addition, the area covered by the heat dissipation copper foil on the PCB 103 is also provided with a through air hole 119, the arrangement of the through air hole 119 is not only beneficial to the gas above the PCB 103 carrying heat and then passing through the air hole 119 to be transmitted to the heat dissipation base 104 downwards, but also can avoid the pressure generated by gas expansion to directly act on devices and electronic circuits on the PCB 103, thereby reducing the probability that the devices and the electronic circuits are damaged due to compression, and greatly prolonging the service life of the semiconductor microwave generation module.
Fig. 1 and 2 relate to a further embodiment of a semiconductor microwave generating module according to the present invention. As shown in fig. 1 and 2, the semiconductor microwave generating module includes a heat dissipating base 104, a (printed circuit board) PCB 103, and a transmitting antenna 105, wherein at least one device is disposed on the PCB 103, the PCB 103 is mounted on the heat dissipating base 104, a closed shielding frame 102 is further disposed on an upper surface of the heat dissipating base 104, the shielding frame 102 surrounds the PCB 103 along an edge of the PCB 103, and the transmitting antenna 105 is disposed outside the shielding frame 102, wherein the PCB 103 includes a first region 106 and a second region 107, and the first region 106 and the second region 107 are separated by a first isolating rib 108 disposed in the shielding frame 102.
In this embodiment, the semiconductor microwave generating module is provided with a shielding frame 102, and the shielding frame 102 can play a role in blocking and preventing the microwave from overflowing. Meanwhile, the first isolation rib 108 is arranged in the shielding frame 102, and the PCB 103 is divided into the first area 106 and the second area 107 by the first isolation rib 108, so that microwave disturbance of devices between the two areas in the working process can be prevented, and the working stability of the semiconductor microwave generation module is ensured.
In one embodiment of the semiconductor microwave generating module of the present invention, the surface of the heat dissipation base contacting the heat dissipation copper foil is provided with undulating grooves at intervals, and the positions of the grooves on the heat dissipation base correspond to the air holes.
In this embodiment, the surface of the heatsink base 104 that contacts the heatsink copper foil (i.e., the top surface of the heatsink base 104 in fig. 1) is provided with alternating raised and recessed grooves, which are not shown in fig. 1 on the top surface of the heatsink base 104 because the grooves have a very shallow depth and are substantially of a microstructure. The fluted configuration corresponds to the air holes 119 in the PCB board 103, allowing air passing through the air holes 119 to remain in or flow along the fluted configuration, thereby relieving the pressure of the air carrying the heat of the device on the back side of the PCB board 103 and more rapidly and widely transferring the heat to the heat sink base 104.
In one embodiment of the semiconductor microwave generating module, the heat dissipation base has a recess for holding the PCB, the recess is provided with a table top for supporting the PCB, and the PCB is embedded in the recess. In one embodiment of the semiconductor microwave generating module, a heating device is disposed on the PCB, and the heating device corresponds to the position of the PCB.
As shown in fig. 3, a groove 120 is formed on the heat dissipation base 104, a table 121 for supporting the PCB 103 is disposed in the groove 120, and the PCB 103 is embedded in the groove 120. In one embodiment, the PCB 103 is further pressed on the heat dissipation base 104 through the shielding frame 102, and the PCB 103 is well fixed and does not slide or fall under the limiting action of the groove 120 and the shielding frame 102. In this embodiment, the PCB 103 is provided with heat generating devices, as shown in fig. 2, the heat generating devices include control devices and power devices, wherein the control devices are located in the first area 106 and the power devices are located in the second area 107. The control device comprises a (micro control unit) MCU109 electrically connected with the power supply circuit and the control circuit, and the MCU109 can control the on-off of the microwave according to instructions and adjust parameters such as power, frequency and the like of the microwave. The power device comprises a microwave signal generating element 110 and a power amplifier 111, and because the microwave signal generating element 110 and the power amplifier 111 both belong to power devices, the generated microwaves are large, and therefore, in order to avoid mutual interference between the microwaves, a second isolation rib 112 is arranged between the microwave signal generating element 110 and the power amplifier 111 to isolate the microwaves through electromagnetic shielding.
The control device and the power device are both semiconductor electronic devices, belong to heat-generating devices and are very sensitive to temperature, so heat dissipation is required, and in this embodiment, as shown in fig. 4, a heat sink 114 is arranged below the PCB 103 at a position corresponding to the heat-generating device. The PCB 103 is provided with a through hole, the heating device (such as the MCU109) is embedded in the corresponding through hole, and the heat sink 114 covers the MCU109 from the outside and is disposed close to the bottom of the PCB 103. Because the heating device penetrates through the PCB 103 and is directly mounted on the heat sink 114, the heat generated by the heating device can directly reach the heat sink 114 and then be conducted to the heat dissipation base 104 to be dissipated without being transferred through the PCB 103, thereby greatly improving the heat dissipation efficiency.
In one embodiment of the semiconductor microwave generating module, the table top is provided with a cavity matched with the heat sink, and the heat sink is embedded in the cavity and attached to the inner wall of the cavity. In the embodiment shown in fig. 3, the top 121 is provided with an accommodating cavity 122 matching with the heat sink 114, the heat sink 114 is embedded in the accommodating cavity 122, and the side and bottom of the heat sink 114 are closely attached to the accommodating cavity 122, so that heat can be rapidly transferred to the heat dissipation base 104 through the heat sink 114, and finally dissipated to the atmosphere outside the semiconductor microwave generation module through the fins of the heat dissipation base 104, thereby achieving the purpose of cooling the electronic device.
In one embodiment of the semiconductor microwave generating module of the present invention, the interval between the grooves is not more than 3mm, and the depth of the groove is 0.6-6.3 μm.
In one embodiment of the semiconductor microwave generating module of the present invention, the shielding cover is provided with a shielding rib therein to separate the heating devices from each other.
In one embodiment of the semiconductor microwave generating module, a magnetic strip is provided on the PCB, the magnetic strip is located on the dividing line of the first region and the second region, and is tightly attached to the first isolation rib and the first isolation rib are located near one side of the first region. In this embodiment, the PCB 103 is further provided with a magnetic conductive strip 113, the magnetic conductive strip 113 is located on a dividing line between the first region 106 and the second region 107, and is close to the first isolation rib 108 and located on a side close to the first region 106, and preferably, the magnetic conductive strip 113 is soft magnetic, so that electromagnetic interference generated by electrical signals of the power device and the control device can be further shielded, and thus magnetic induction signals generated by changes of the electrical signals can be absorbed.
In one embodiment of the semiconductor microwave generation module, the shielding frame is disposed with a wire hole left on one side of the transmitting antenna, the transmitting antenna is connected to the power amplifier through the wire hole, and is fixed to the shielding frame and the heat dissipation base through a flange. In this embodiment, as shown in fig. 2, the left side of the shield frame 102 is provided with the transmitting antenna 105, and the shield frame 102 is provided with a wire hole on the side wall of the side through which the wire head 116 of the transmitting antenna 105 passes and is electrically connected to the power amplifier 111 through the circuit structure on the PCB board 103. The transmitting antenna 105 is fixed to the shielding frame 102 and the heat dissipation base 104 through the flange 115, and the microwave with amplified power is fed into the food material through the transmitting antenna 105 for heating.
The above embodiments are only for illustrating the design method of the present invention, and can not be used to limit the protection scope of the present invention. To being in the utility model discloses deformation and conversion under technical scheme's the thought guidance all should fall back to the utility model discloses within the scope of protection.

Claims (10)

1. The utility model provides a semiconductor microwave generation module, includes heat dissipation base, PCB board and transmitting antenna, be provided with at least one device on the PCB board, the PCB board is installed on the heat dissipation base, its characterized in that, still offer on the PCB board and be used for the installation the perforating hole of device, the device passes the perforating hole the below of perforating hole is provided with the radiator, the radiator is hugged closely the device is fixed in with it on the PCB board.
2. The semiconductor microwave generating module according to claim 1, wherein at least one side of the PCB board is covered with a heat-dissipating copper foil.
3. The semiconductor microwave generating module according to claim 2, wherein a surface of the PCB board adjacent to the heat sink is covered with a heat dissipating copper foil, and the heat sink and the PCB board are fixed by solder disposed on the heat dissipating copper foil.
4. The semiconductor microwave generating module according to claim 2, wherein a surface of the PCB board adjacent to the heat sink is covered with a heat dissipating copper foil, and the heat sink is attached to the heat dissipating copper foil and fixed to the PCB board.
5. The semiconductor microwave generation module according to any one of claims 1 to 4, wherein the heat dissipation base has a recess formed therein for accommodating the PCB, a table for supporting the PCB is provided in the recess, and the PCB is fitted in the recess.
6. The semiconductor microwave generating module according to claim 5, wherein the top is provided with a receiving cavity matching with the heat sink, and the heat sink is fitted in the receiving cavity and attached to an inner wall of the receiving cavity.
7. The semiconductor microwave generating module according to claim 6, wherein the heat dissipating base is provided with heat dissipating fins, the heat dissipating fins being located below the stage.
8. The semiconductor microwave generation module according to claim 7, wherein the heat dissipation fins include first fins located at positions corresponding to the receiving cavities and second fins that are other than the first fins, wherein the first fins have a greater length than the second fins.
9. A semiconductor microwave generating module according to any one of claims 1 to 4, wherein a shield case is provided above the PCB, and the shield case is mounted on the heat dissipating base and press-fits the PCB to the heat dissipating base.
10. A semiconductor microwave generating module according to any one of claims 2 to 4, wherein the region of the PCB covered by the heat-dissipating copper foil is provided with through-holes.
CN201920378212.1U 2019-03-25 2019-03-25 Semiconductor microwave generation module Active CN210130048U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201920378212.1U CN210130048U (en) 2019-03-25 2019-03-25 Semiconductor microwave generation module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201920378212.1U CN210130048U (en) 2019-03-25 2019-03-25 Semiconductor microwave generation module

Publications (1)

Publication Number Publication Date
CN210130048U true CN210130048U (en) 2020-03-06

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Application Number Title Priority Date Filing Date
CN201920378212.1U Active CN210130048U (en) 2019-03-25 2019-03-25 Semiconductor microwave generation module

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112996329A (en) * 2021-04-29 2021-06-18 成都天锐星通科技有限公司 Phased array antenna

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112996329A (en) * 2021-04-29 2021-06-18 成都天锐星通科技有限公司 Phased array antenna

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Effective date of registration: 20230811

Address after: No. 999, Mei Li Road, Huaiyin District, Ji'nan, Shandong

Patentee after: Shandong Jiuchuang Home Appliance Co.,Ltd.

Address before: No. 999, Mei Li Road, Huaiyin District, Ji'nan, Shandong

Patentee before: JOYOUNG Co.,Ltd.