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CN209627337U - A 5G high-performance LTCC bandpass filter for suppressing high-order harmonics - Google Patents

A 5G high-performance LTCC bandpass filter for suppressing high-order harmonics Download PDF

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CN209627337U
CN209627337U CN201920429823.4U CN201920429823U CN209627337U CN 209627337 U CN209627337 U CN 209627337U CN 201920429823 U CN201920429823 U CN 201920429823U CN 209627337 U CN209627337 U CN 209627337U
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capacitor
inductance
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华嘉源
叶强
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Dragon Totem Technology Hefei Co ltd
Shijiazhuang Leixun Electronic Technology Co ltd
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Shangyu Institute Of Advanced Studies China University Of Metrology Co Ltd
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Abstract

The utility model discloses a kind of LTCC bandpass filter, including matrix, input terminal electrode, output terminal electrode, ground connection termination electrode and internal circuit;The internal circuit includes three parallel resonances, three coupling inductances, two connection capacitors and a source-load coupled capacitor, further includes three pieces of ground connection pole plates, and one of ground connection pole plate uses defect ground structure;Realize these inductance, filter is made on LTCC green surface, and by punching, filling perforation, wire mark, lamination and sintering process in the conductor printing of capacity cell;Internal circuit uses LTCC vertical interconnecting structure, and inductance uses twin stack configuration, and capacitor uses MIM formula capacitor, is connected between inductance and capacitor by vertical through hole.The bandpass filter is small in size, and production cost is low, can be mass, and passband introduces three transmission zeros up to 1GHz and small with interior Insertion Loss, and Out-of-band rejection is high and low-resistance belt sideband is precipitous, and using mirror image, performance reliability is high.

Description

一种抑制高次谐波的5G高性能LTCC带通滤波器A 5G high-performance LTCC bandpass filter for suppressing high-order harmonics

技术领域technical field

本实用新型涉及的是滤波器技术领域,具体涉及一种抑制高次谐波的5G高性能LTCC带通滤波器。The utility model relates to the technical field of filters, in particular to a 5G high-performance LTCC bandpass filter for suppressing high-order harmonics.

背景技术Background technique

微波带通滤波器是微波射频系统的一个关键部件,随着近年来微波电路设计仿真技术和工艺的发展,对射频系统的小型化需求也越来越高,而滤波器的小型化更是首当其冲,如何在保证一定的性能指标下尽可能地减小滤波器的体积成为了小型化射频系统需要解决的一个重要问题。同时,无线通信系统的快速发展,频率资源日益紧张,为了抑制外部信号以及混频器、振荡器等器件产生的高次谐波,提高整机的电性能,要求滤波器具有良好的带外抑制能力。Microwave bandpass filter is a key component of microwave radio frequency system. With the development of microwave circuit design simulation technology and technology in recent years, the demand for miniaturization of radio frequency system is getting higher and higher, and the miniaturization of filter is the first to bear the brunt , how to reduce the size of the filter as much as possible while ensuring a certain performance index has become an important problem to be solved in the miniaturized radio frequency system. At the same time, with the rapid development of wireless communication systems, frequency resources are increasingly tight. In order to suppress external signals and high-order harmonics generated by components such as mixers and oscillators, and improve the electrical performance of the whole machine, the filter is required to have good out-of-band suppression. ability.

低温共烧陶瓷是一种电子封装技术,采用多层陶瓷工艺,能将无源器件置于陶瓷介质内部。LTCC(低温共烧陶瓷)技术是近年发展起来的多层陶瓷工艺技术,利用该技术可以实现传统陶瓷基板工艺无法实现的三维结构。使用LTCC技术设计微波无源器件具有非常大的灵活性。如何充分利用LTCC工艺的优势,通过合理布局,确定滤波器的结构,并且使得设计具有一定的稳定性,在必要的加工误差范围内仍能保持产品的成功率是LTCC滤波器设计的一个关键问题。Low-temperature co-fired ceramics is an electronic packaging technology that uses a multilayer ceramic process to place passive components inside a ceramic dielectric. LTCC (Low Temperature Co-fired Ceramics) technology is a multilayer ceramic technology developed in recent years. Using this technology, three-dimensional structures that cannot be realized by traditional ceramic substrate technology can be realized. Designing microwave passive devices using LTCC technology has great flexibility. How to make full use of the advantages of the LTCC process, determine the structure of the filter through a reasonable layout, and make the design have a certain stability, and maintain the success rate of the product within the necessary processing error range is a key issue in the design of the LTCC filter .

然而,传统滤波器的频率响应在离开主通带一定距离(通常是主通带中心频率的整数倍)时会产生寄生通带,不适合于要求抑制谐波的应用场合。However, the frequency response of the traditional filter will produce a spurious passband when it is a certain distance away from the main passband (usually an integer multiple of the center frequency of the main passband), which is not suitable for applications that require harmonic suppression.

实用新型内容Utility model content

针对现有技术的不足,本实用新型提出了一种抑制高次谐波的5G高性能LTCC带通滤波器,该滤波器采用LTCC技术,极大的缩小了器件的体积,仅为1.6mm*0.8mm*0.6mm;内部电路采用左右对称结构,通过合理布局以及利用元件之间的耦合作用,减小了设计的复杂度;同时,在源与负载间增加一个耦合电容,在低端阻带产生多个传输零点,在三个谐振单元中分别增加三组LC串联谐振,在高端阻带形成传输零点,在抑制阻带高次谐波的同时,增大了阻带衰减,得到较宽的阻带范围。具体技术方案如下:Aiming at the deficiencies of the existing technology, this utility model proposes a 5G high-performance LTCC bandpass filter that suppresses high-order harmonics. The filter uses LTCC technology, which greatly reduces the size of the device, only 1.6mm* 0.8mm*0.6mm; the internal circuit adopts a left-right symmetrical structure, and the complexity of the design is reduced through a reasonable layout and the use of coupling between components; at the same time, a coupling capacitor is added between the source and the load, and the low-end stop band Multiple transmission zeros are generated, and three groups of LC series resonances are respectively added to the three resonance units to form transmission zeros in the high-end stop band. While suppressing high-order harmonics in the stop band, the stop band attenuation is increased to obtain a wider stopband range. The specific technical scheme is as follows:

一种抑制高次谐波的5G高性能LTCC带通滤波器,包括基体、输入端电极、输出端电极、接地端电极以及内部电路;所述的基体内部包括多层LTCC陶瓷基板,其中,所述输入端电极和输出端电极分别设于所述滤波器长度方向上的相对两端,所述接地端电极设于滤波器长度方向上的中部外侧;A 5G high-performance LTCC bandpass filter for suppressing high-order harmonics, including a substrate, an input terminal electrode, an output terminal electrode, a ground terminal electrode, and an internal circuit; the substrate includes a multi-layer LTCC ceramic substrate, wherein the The input terminal electrode and the output terminal electrode are respectively arranged at opposite ends of the filter in the length direction, and the ground terminal electrode is arranged outside the middle part in the filter length direction;

所述的内部电路包括并联连接的构成第一谐振的第一电感L1和第一电容C1、并联连接的构成第二谐振的第二电感L2和第二电容C2、并联连接的构成第三谐振的第三电感L3和第三电容C3,谐振间通过电容连接,还包括源-负载耦合电容C,三块接地极板,其中一块采用缺陷地结构,实现这些电感、电容元件的导体印刷在LTCC生瓷表面,并通过打孔、填孔、网印、层压和烧结工艺制成滤波器;滤波器整体采用LTCC特有的垂直互连结构;The internal circuit includes the first inductance L1 and the first capacitor C1 connected in parallel to form the first resonance, the second inductance L2 and the second capacitor C2 connected in parallel to form the second resonance, and the second inductor L2 and the second capacitor C2 connected in parallel to form the third resonance. The third inductance L3 and the third capacitor C3 are connected by capacitors between the resonances, including the source-load coupling capacitor C, and three ground plates, one of which adopts a defective ground structure to realize the conductor printing of these inductors and capacitors in LTCC production Porcelain surface, and the filter is made by drilling, filling, screen printing, lamination and sintering processes; the filter as a whole adopts the unique vertical interconnection structure of LTCC;

第一、第二、第三电感L1、L2、L3采用多层陶瓷介质上的层叠电感实现,不同陶瓷介质层上的金属导体通过通孔连接,通过调节层叠电感线每层的线长,线宽来调节电感值;The first, second, and third inductors L1, L2, and L3 are implemented by stacked inductors on multilayer ceramic dielectrics. Metal conductors on different ceramic dielectric layers are connected through through holes. By adjusting the length of each layer of the stacked inductor line, the line wide to adjust the inductance value;

第一、第二、第三、第四、第五以及源-负载耦合电容C1、C2、C3、C4、C5、C通过多层陶瓷介质层的平面电容极板实现,不同陶瓷介质层之间的电容极板通过极板间的相互耦合以及通孔实现互连,通过调整极板的尺寸来调节电容值;The first, second, third, fourth, fifth, and source-load coupling capacitors C1, C2, C3, C4, C5, and C are realized by planar capacitor plates of multilayer ceramic dielectric layers, between different ceramic dielectric layers The capacitive plates are interconnected through the mutual coupling between the plates and through holes, and the capacitance value is adjusted by adjusting the size of the plates;

所述带通滤波器内部电路部分共有11层,第1层、第11层以及第3层为整片接地层,其中第3层接地层为缺陷地结构,三层接地层均与基体两侧的接地端电极相连;The internal circuit part of the bandpass filter has 11 layers in total, the first layer, the eleventh layer and the third layer are the whole ground layer, and the third layer ground layer is a defect ground structure, and the three layers of ground layers are connected to both sides of the substrate. The ground terminal electrode is connected;

所述带通滤波器第一谐振位于内部电路结构左侧,第一电容C1位于电路第4层,一端通过通孔与第6层第四电容C4的下级极板相连,第一电感L1位于电路第8,第9层,其中电感L1一端与所述的接地端电极相连,另一端通过通孔与电容C4下极板相连;The first resonance of the bandpass filter is located on the left side of the internal circuit structure, the first capacitor C1 is located on the fourth layer of the circuit, one end is connected to the lower plate of the fourth capacitor C4 on the sixth layer through a through hole, and the first inductor L1 is located on the circuit The eighth and ninth layers, wherein one end of the inductor L1 is connected to the ground electrode, and the other end is connected to the lower plate of the capacitor C4 through a through hole;

第三谐振位于内部电路结构右侧,第三电容C3位于电路第4层,一端通过通孔与第6层第五电容C5的下级极板相连,第三电感L3位于电路第8,第9层,其中电感L3一端与所述的接地端电极相连,另一端通过通孔与电容C5下极板相连;The third resonance is located on the right side of the internal circuit structure. The third capacitor C3 is located on the fourth layer of the circuit. One end is connected to the lower plate of the fifth capacitor C5 on the sixth layer through a through hole. The third inductor L3 is located on the eighth and ninth layers of the circuit. , wherein one end of the inductor L3 is connected to the ground terminal electrode, and the other end is connected to the lower plate of the capacitor C5 through a through hole;

第二谐振位于内部电路结构中部,第二电容C2位于电路第二层,通过通孔穿过缺陷地结构与第5层哑铃型极板相连,该极板与C4下极板以及C5下极板构成电容C4、C5,第二电感L2位于电路第8、第9层,其中电感L2一端通过通孔与第11层接地层相连,另一端通过通孔与C2相连;The second resonance is located in the middle of the internal circuit structure, and the second capacitor C2 is located on the second layer of the circuit. It passes through the defective ground structure through a through hole and connects to the dumbbell-shaped plate on the fifth layer. This plate is connected to the lower plate of C4 and the lower plate of C5. Capacitors C4 and C5 are formed, and the second inductance L2 is located on the 8th and 9th layers of the circuit, wherein one end of the inductance L2 is connected to the ground layer of the 11th layer through a through hole, and the other end is connected to C2 through a through hole;

源-负载耦合电容位于电路第7层,为哑铃型结构,在低阻带产生传输零点,同时,L1又作为下地电感与C1形成串联谐振,在高端阻带形成传输零点,同理,L2与C2,L3与C3分别形成串联谐振,在高端形成传输零点。The source-load coupling capacitor is located on the seventh layer of the circuit. It is a dumbbell-shaped structure that generates a transmission zero point in the low-stop band. At the same time, L1 acts as a ground inductance to form a series resonance with C1, forming a transmission zero point in the high-end stop band. Similarly, L2 and C2, L3 and C3 respectively form a series resonance and form a transmission zero at the high end.

进一步地,第一电容C1一端通过通孔与电路第10层左侧一极板相连,极板另一端与左端输入端口相连;第三电容C3一端通过通孔与电路第10层右侧一极板相连,极板另一端与右端输出端口相连。Further, one end of the first capacitor C1 is connected to a pole plate on the left side of the 10th layer of the circuit through a through hole, and the other end of the plate is connected to the input port of the left end; one end of the third capacitor C3 is connected to a pole on the right side of the 10th layer of the circuit through a through hole The plate is connected, and the other end of the plate is connected to the output port on the right.

进一步地,电感L1、电容C1、C4的结构与电感L3、电容C3、C5的结构呈镜像对称。Further, the structure of the inductor L1, the capacitors C1, C4 and the structure of the inductor L3, the capacitors C3, C5 are mirror images.

进一步地,电路第6层电容C4,C5的下极板为非完整的矩形结构,存在半径为0.22mm的四分之一圆形缺口。Furthermore, the lower plates of capacitors C4 and C5 in the sixth layer of the circuit are incomplete rectangular structures, and there is a quarter-circle gap with a radius of 0.22 mm.

进一步地,滤波器的基体尺寸为0.8mm×1.6mm×0.6mm。Further, the base size of the filter is 0.8mm×1.6mm×0.6mm.

进一步地,滤波器的通带范围为4.99-5.95GHz,通带最大插入损耗为1.2dB,在低端阻带2.45GHz,3.68GHz处分别产生一个传输零点,在高端阻带12.73GHz处产生一个传输零点,在高端阻带15GHz处的衰减大于25dB。Further, the passband range of the filter is 4.99-5.95GHz, the maximum insertion loss of the passband is 1.2dB, a transmission zero is generated at 2.45GHz and 3.68GHz at the low-end stopband, and a transmission zero is generated at 12.73GHz at the high-end stopband Transmission zero, attenuation greater than 25dB at 15GHz in the high-end stop band.

本实用新型的有益效果如下:The beneficial effects of the utility model are as follows:

(1)采用LTCC多层工艺,使滤波器的结构更加紧凑,此工艺能有效减小元器尺寸,符合小型化的趋势;(1) Using LTCC multi-layer process to make the structure of the filter more compact, this process can effectively reduce the size of components, in line with the trend of miniaturization;

(2)创造性的使用了三层内部地结构,顶层以及底层接地层的使用,能有效减少外部电路的影响,内部电路第三层缺陷地结构的使用,能有效抑制元件间的寄生耦合效应,使滤波器的性能更稳定,同时,为接地并联耦合电容提供了接地层,使得并联谐振的设计更为灵活,极大的优化了设计的复杂度,用较少的元件、较为简单的结构实现了三阶带通滤波器,一定程度上减小了器件的尺寸,降低了调试的难度;(2) The creative use of a three-layer internal ground structure, the use of the top and bottom ground layers can effectively reduce the impact of external circuits, and the use of the third-layer defective ground structure of the internal circuit can effectively suppress the parasitic coupling effect between components, The performance of the filter is more stable, and at the same time, it provides a ground plane for the ground parallel coupling capacitor, which makes the design of parallel resonance more flexible, greatly optimizes the complexity of the design, and realizes it with fewer components and a simpler structure A third-order bandpass filter is introduced, which reduces the size of the device to a certain extent and reduces the difficulty of debugging;

(3)源-负载耦合电容的应用,在低端阻带产生传输零点,更值得一提的是,电感L1,L2,L3在作为并联谐振单元谐振电感的同时,又分别与C1,C2,C3形成串联谐振,构成了LC串联谐振与电容C再构成并联谐振的双谐振单元结构,此结构的使用,极大的简化了内部电路结构,增大了空间利用率,同时在高端阻带12.73GHz处产生零点,使得二次谐波10GHz处抑制达到25dB,三次谐波15GHz处抑制达到30dB,有效抑制了高次谐波,增大了阻带范围,结合低端阻带零点,实现了高阻带抑制性能。(3) The application of the source-load coupling capacitor produces a transmission zero point in the low-end stop band. What is more worth mentioning is that the inductors L1, L2, and L3 are used as the resonant inductor of the parallel resonant unit, and they are respectively connected with C1, C2, C3 forms series resonance, which constitutes a double resonance unit structure of LC series resonance and capacitor C to form parallel resonance. The use of this structure greatly simplifies the internal circuit structure and increases space utilization. At the same time, the high-end stop band 12.73 A zero point is generated at GHz, so that the suppression of the second harmonic at 10GHz reaches 25dB, and the suppression of the third harmonic at 15GHz reaches 30dB, which effectively suppresses high-order harmonics and increases the range of the stop band. Combined with the zero point of the low-end stop band, high Stop-band suppression performance.

(4)滤波器整体采用3阶对称式谐振单元,较少的阶数使得通带内插入损耗最大仅为1.2dB,达到了低插损的指标。(4) The filter adopts a 3rd-order symmetrical resonant unit as a whole, and the fewer orders make the maximum insertion loss in the passband only 1.2dB, reaching the low insertion loss index.

(5)为了克服传统平面螺旋电感在垂直方向上利用效率低和杂散多难以抑制的缺点,本文采用双层层叠电感,在小幅度改变感值的前提下,大幅度提升电感Q值,进一步提升整个滤波器的滤波性能。(5) In order to overcome the shortcomings of traditional planar spiral inductors in the vertical direction, such as low utilization efficiency and high strays that are difficult to suppress, a double-layer stacked inductor is used in this paper, and the Q value of the inductor is greatly improved under the premise of a small change in the inductance value. Improve the filtering performance of the entire filter.

附图说明Description of drawings

图1为本实用新型的LTCC带通滤波器的外形图;Fig. 1 is the outline drawing of the LTCC band-pass filter of the present utility model;

图2为本实用新型的LTCC带通滤波器的内部电路图;Fig. 2 is the internal circuit diagram of the LTCC band-pass filter of the present utility model;

图3为本实用新型的LTCC带通滤波器的正视结构图;Fig. 3 is the front structural diagram of the LTCC band-pass filter of the present utility model;

图4为本实用新型的LTCC带通滤波器的第1层3D结构图;Fig. 4 is the first layer 3D structural diagram of the LTCC band-pass filter of the present utility model;

图5为本实用新型的LTCC带通滤波器的第2层3D结构图;Fig. 5 is the 2nd layer 3D structural diagram of the LTCC bandpass filter of the present utility model;

图6为本实用新型的LTCC带通滤波器的第3层3D结构图;Fig. 6 is the 3rd layer 3D structural diagram of the LTCC bandpass filter of the present utility model;

图7为本实用新型的LTCC带通滤波器的第4层3D结构图;Fig. 7 is the 4th layer 3D structural diagram of the LTCC band-pass filter of the present utility model;

图8为本实用新型的LTCC带通滤波器的第5层3D结构图;Fig. 8 is the 5th layer 3D structural diagram of the LTCC bandpass filter of the present utility model;

图9为本实用新型的LTCC带通滤波器的第6层3D结构图;Fig. 9 is the 6th layer 3D structural diagram of the LTCC bandpass filter of the present utility model;

图10为本实用新型的LTCC带通滤波器的第7层3D结构图;Fig. 10 is the 7th layer 3D structural diagram of the LTCC bandpass filter of the present utility model;

图11为本实用新型的LTCC带通滤波器的第8层3D结构图;Fig. 11 is the 8th layer 3D structural diagram of the LTCC bandpass filter of the present utility model;

图12为本实用新型的LTCC带通滤波器的第9层3D结构图;Fig. 12 is the 9th layer 3D structural diagram of the LTCC bandpass filter of the present utility model;

图13为本实用新型的LTCC带通滤波器的第10层3D结构图;Fig. 13 is the 10th layer 3D structural diagram of the LTCC bandpass filter of the present utility model;

图14为本实用新型的LTCC带通滤波器的第11层3D结构图;Fig. 14 is the 11th layer 3D structural diagram of the LTCC bandpass filter of the present utility model;

图15为本实用新型的LTCC带通滤波器的S参数仿真结果图,其中图15a为s21参数结果图,图15b为s11参数结果图。Fig. 15 is the S parameter simulation result diagram of the LTCC bandpass filter of the present invention, wherein Fig. 15a is the s21 parameter result diagram, and Fig. 15b is the s11 parameter result diagram.

具体实施方式Detailed ways

下面根据附图和优选实施例详细描述本实用新型,本实用新型的目的和效果将变得更加明白,以下结合附图和实施例,对本实用新型进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本实用新型,并不用于限定本实用新型。The utility model will be described in detail below according to the accompanying drawings and preferred embodiments, and the purpose and effect of the utility model will become clearer. The utility model will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the utility model, and are not intended to limit the utility model.

图1是采用LTCC技术实现的带通滤波器的整体外形图,包括LTCC陶瓷基体外壳。在基体长度方向上的中部外侧印刷了可焊接的金属导体条作为滤波器的接地电极GND;在滤波器基体长度方向上的相对两端覆盖了可焊接金属导体作为滤波器的输入电极IN和输出电极OUT。Figure 1 is the overall outline of a band-pass filter implemented using LTCC technology, including the LTCC ceramic base shell. On the outside of the middle part in the length direction of the substrate, a weldable metal conductor strip is printed as the ground electrode GND of the filter; on the opposite ends of the filter substrate in the length direction, weldable metal conductors are covered as the input electrode IN and output of the filter Electrode OUT.

本实施例中LTCC带通滤波器外形尺寸为0.8mm×1.6mm×0.6mm,所使用的LTCC陶瓷介质相对介电常数为9.8,损耗角正切为0.002,每层陶瓷介质的厚度为0.05mm,金属导体材料为金属银。In this embodiment, the external dimensions of the LTCC bandpass filter are 0.8mm×1.6mm×0.6mm, the relative dielectric constant of the LTCC ceramic medium used is 9.8, the loss tangent is 0.002, and the thickness of each layer of ceramic medium is 0.05mm. The metal conductor material is metallic silver.

图2为本实用新型的带通滤波器的内部电路图,图3是LTCC带通滤波器正视结构图。从图中可以看出,3D结构整体采用垂直互连形式,且一共有11层;电路的顶层、底层以及第3层为内部地,其中第三层为缺陷地结构,此结构方便对地谐振电容C1、C2、C3的设计和布局,且能有效降低元器件之间的耦合与寄生效应;由于所需电感值较小,电感采用双层层叠式结构;电容采用MIM式结构,该结构的电容拥有较大的Q值,性能稳定;Fig. 2 is an internal circuit diagram of the band-pass filter of the present invention, and Fig. 3 is a front structural diagram of the LTCC band-pass filter. It can be seen from the figure that the 3D structure adopts the form of vertical interconnection as a whole, and has a total of 11 layers; the top layer, the bottom layer and the third layer of the circuit are internal grounds, and the third layer is a defect ground structure, which is convenient for ground resonance The design and layout of capacitors C1, C2, and C3 can effectively reduce the coupling and parasitic effects between components; because the required inductance value is small, the inductor adopts a double-layer stacked structure; the capacitor adopts a MIM structure, and the structure's The capacitor has a large Q value and stable performance;

从图3中可以看出,3D电路中,第一谐振与第三谐振呈镜像对称,即元件的尺寸,相对位置均相同;电路结构中第4层左侧极板与第3层地层形成对地电容C1,其一端通过通孔和第十层的连接极板,再与输入端相连,另一端通过通孔与第8、第9层的电感L1一端相连,形成并联谐振,电感L1另一端接地;第三谐振结构与第一谐振结构相同;电路第2层极板与第1、第3层地层形成对地电容C2,通过通孔与第8、第9层的电感L2一端相连,形成第二并联谐振,电感L2另一端接地;电路第6层左右极板分别为电容C4、电容C5的下极板,与电路第5层极板耦合出电容C4与C5;电路第6层电容C4,C5的下极板为非完整的矩形结构,存在半径为0.22mm的四分之一圆形缺口。同时,各级谐振之间通过电容相连;其中,电容C4下极板一端与连接C1、L1的通孔相连,电容C5下级板的一端与连接C3、L3的通孔相连;以上结构构成带通滤波器的基本拓扑结构,具有滤波效果;为了增加滤波器阻带的衰减效果,增加了电路第7层哑铃型极板,与第6层极板耦合,形成源—负载耦合电容同时,L1又作为下地电感与C1形成串联谐振,在高端阻带形成传输零点,同理,L2与C2,L3与C3分别形成串联谐振,在高端形成传输零点,以此在阻带增加多个传输零点,改善阻带特性。滤波器电路具体结构如图4-图14所示。It can be seen from Figure 3 that in the 3D circuit, the first resonance and the third resonance are mirror-image symmetric, that is, the size and relative position of the components are the same; Ground capacitor C1, one end of which is connected to the input end through a through hole and the connecting plate of the tenth layer, and the other end is connected to one end of the inductor L1 of the 8th and 9th layers through a through hole to form a parallel resonance, and the other end of the inductor L1 Grounding; the third resonant structure is the same as the first resonant structure; the second layer of the circuit forms a capacitance C2 to the ground with the first and third layers of the ground, and is connected to one end of the inductor L2 of the eighth and ninth layers through a through hole to form The second parallel resonance, the other end of the inductor L2 is grounded; the left and right plates of the sixth layer of the circuit are the lower plates of the capacitor C4 and capacitor C5 respectively, and the capacitors C4 and C5 are coupled with the fifth layer of the circuit; the capacitor C4 of the sixth layer of the circuit , The lower plate of C5 is an incomplete rectangular structure, and there is a quarter-circle gap with a radius of 0.22mm. At the same time, the resonances of all levels are connected through capacitors; among them, one end of the lower plate of capacitor C4 is connected to the through hole connecting C1 and L1, and one end of the lower plate of capacitor C5 is connected to the through hole connecting C3 and L3; the above structure constitutes a band pass The basic topology of the filter has a filtering effect; in order to increase the attenuation effect of the stop band of the filter, a dumbbell-shaped plate on the seventh layer of the circuit is added, which is coupled with the sixth layer of the plate to form a source-load coupling capacitance. At the same time, L1 is also As a ground inductor, it forms a series resonance with C1, forming a transmission zero point in the high-end stop band. Similarly, L2 and C2, L3 and C3 respectively form a series resonance, forming a transmission zero point at the high end, thereby adding multiple transmission zero points in the stop band to improve stopband characteristics. The specific structure of the filter circuit is shown in Figure 4-Figure 14.

图15为本LTCC带通滤波器的S参数仿真图,如图所示,在滤波器通带范围4.99—5.95GHz内,滤波器最大插入损耗小于1.2dB,在低端阻带2.45GHz,3.68GHz处分别产生一个传输零点,拥有陡峭的低端阻带特性曲线,在高端阻带12.73GHz处产生一个传输零点,使得10GHz处的衰减大于25dB,30GHz处衰减达到30dB,抑制了高端阻带的高次谐波,使得滤波器具有较宽的阻带特性。Figure 15 is the S-parameter simulation diagram of the LTCC bandpass filter. As shown in the figure, in the filter passband range of 4.99-5.95GHz, the maximum insertion loss of the filter is less than 1.2dB, and in the low-end stopband of 2.45GHz, 3.68 A transmission zero point is generated at GHz respectively, with a steep low-end stopband characteristic curve, and a transmission zero point is generated at 12.73GHz at the high-end stopband, making the attenuation at 10GHz greater than 25dB, and the attenuation at 30GHz reaches 30dB, suppressing the attenuation of the high-end stopband Higher harmonics make the filter have a wider stopband characteristic.

综上,本实用新型提供的LTCC带通滤波器具有体积小,插入损耗小,带外抑制高,阻带范围宽的特点,可以进行贴片、焊接,便于和其他微波元件集成。而且本实用新型是基于LTCC工艺的,制造成本低,适合批量生产。To sum up, the LTCC bandpass filter provided by the utility model has the characteristics of small size, small insertion loss, high out-of-band suppression, and wide stopband range. It can be patched and welded, and is easy to integrate with other microwave components. Moreover, the utility model is based on LTCC technology, has low manufacturing cost and is suitable for mass production.

本领域普通技术人员可以理解,以上所述仅为实用新型的优选实例而已,并不用于限制实用新型,尽管参照前述实例对实用新型进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实例记载的技术方案进行修改,或者对其中部分技术特征进行等同替换。凡在实用新型的精神和原则之内,所做的修改、等同替换等均应包含在实用新型的保护范围之内。Those of ordinary skill in the art can understand that the above description is only a preferred example of the utility model, and is not intended to limit the utility model. Although the utility model has been described in detail with reference to the foregoing examples, for those skilled in the art, the It is still possible to modify the technical solutions recorded in the foregoing examples, or perform equivalent replacements for some of the technical features. All modifications, equivalent replacements, etc. within the spirit and principles of the utility model shall be included in the protection scope of the utility model.

Claims (6)

1. a kind of 5G high-performance LTCC bandpass filter for inhibiting higher hamonic wave, including matrix, input terminal electrode, output end electricity Pole, ground connection termination electrode and internal circuit;The intrinsic silicon includes multilayer LTCC ceramic substrate, wherein the input terminal Electrode and output terminal electrode are respectively arranged on the opposite end on the filter length direction, and the ground connection termination electrode is set to filtering On the outside of middle part on device length direction;
The internal circuit includes the first inductance L1 and first capacitor C1 for the first resonance of composition being connected in parallel, is connected in parallel The the second inductance L2 and the second capacitor C2 of the second resonance of composition, the third inductance L3 for the composition third resonance being connected in parallel and Three capacitor C3 further include source-load coupled capacitor C, three pieces of ground connection pole plates, one of use by capacitance connection between resonance Defect ground structure, realize the conductor printing of these inductance, capacity cell on LTCC green surface, and pass through punching, filling perforation, net Filter is made in print, lamination and sintering process;Filter integrally uses the distinctive vertical interconnecting structure of LTCC;
First, second, third inductance L1, L2, L3 is using the laminated inductor realization on multiple layer ceramic dielectric, different ceramic dielectric layers On metallic conductor connected by through-hole, by adjusting the wire length of every layer of laminated inductor line, line width adjusts inductance value;
The first, second, third, fourth, the 5th and source-load coupled capacitor C1, C2, C3, C4, C5, C is situated between by multi-layer ceramics The plane capacitance pole plate of matter layer realizes that the capacitor plate between different ceramic dielectric layers is by intercoupling between pole plate and leads to Interconnection is realized in hole, carrys out capacitance value by adjusting the size of pole plate;
Bandpass filter internal circuit part shares 11 layers, and the 1st layer, 11th layer and the 3rd layer are full wafer ground plane, wherein 3rd layer of ground plane is defect ground structure, and three layers of ground plane are connected with the ground connection termination electrode of matrix two sides;
On the left of the internally positioned circuit structure of the first resonance of bandpass filter, first capacitor C1 is located at the 4th layer of circuit, and one end is logical Through-hole is crossed to be connected with junior's pole plate of the 6th layer of the 4th capacitor C4, the first inductance L1 is located at circuit the 8th, and the 9th layer, wherein inductance L1 One end is connected with the ground connection termination electrode, and the other end is connected by through-hole with capacitor C4 bottom crown;
On the right side of the internally positioned circuit structure of third resonance, third capacitor C3 is located at the 4th layer of circuit, and one end passes through through-hole and the 6th layer Junior's pole plate of 5th capacitor C5 is connected, and third inductance L3 is located at circuit the 8th, and the 9th layer, wherein the one end inductance L3 connects with described Ground termination electrode is connected, and the other end is connected by through-hole with capacitor C5 bottom crown;
In the middle part of the internally positioned circuit structure of second resonance, the second capacitor C2 is located at the circuit second layer, across defect by through-hole Structure is connected with the 5th layer of dumbbell shape pole plate, and the pole plate and C4 bottom crown and C5 bottom crown constitute capacitor C4, C5, the second inductance L2 is located at the 8th, the 9th layer of circuit, and wherein the one end inductance L2 is connected by through-hole with 11th layer ground plane, the other end pass through through-hole and C2 is connected;
Source-load coupled capacitor is located at the 7th layer of circuit, is dumbbell shape structure, generates transmission zero in low-resistance belt, meanwhile, L1 is again Series resonance is formed as lower ground inductance and C1, forms transmission zero in high-end stopband, similarly, L2 and C2, L3 and C3 distinguish shape At series resonance, in high-end formation transmission zero.
2. LTCC bandpass filter according to claim 1, which is characterized in that the one end first capacitor C1 passes through through-hole and electricity A pole plate is connected on the left of the 10th floor of road, and the pole plate other end is connected with left end input port;Third one end capacitor C3 by through-hole with The 10th layer of one pole plate of right side of circuit is connected, and the pole plate other end is connected with right end output port.
3. LTCC bandpass filter according to claim 1, which is characterized in that inductance L1, the structure of capacitor C1, C4 and electricity Feel L3, the structure of capacitor C3, C5 are in mirror symmetry.
4. LTCC bandpass filter according to claim 1, which is characterized in that the 6th layer capacitance C4 of circuit, the bottom crown of C5 For incomplete rectangular configuration, there are a quarter circumferential notches that radius is 0.22mm.
5. LTCC bandpass filter according to claim 1, which is characterized in that the matrix of filter having a size of 0.8mm × 1.6mm×0.6mm。
6. LTCC bandpass filter according to claim 1, which is characterized in that the free transmission range of filter is 4.99- 5.95GHz, passband maximum insertion are 1.2dB, generate a transmission zero respectively at low side stopband 2.45GHz, 3.68GHz Point generates a transmission zero at high-end stopband 12.73GHz, and the decaying at high-end stopband 15GHz is greater than 25dB.
CN201920429823.4U 2019-04-01 2019-04-01 A 5G high-performance LTCC bandpass filter for suppressing high-order harmonics Expired - Fee Related CN209627337U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109889176A (en) * 2019-04-01 2019-06-14 中国计量大学上虞高等研究院有限公司 A 5G high-performance LTCC bandpass filter for suppressing higher harmonics
CN110867632A (en) * 2019-12-18 2020-03-06 深圳波而特电子科技有限公司 A Loaded Capacitor Bandpass Filter Based on Ceramic Dielectric Materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109889176A (en) * 2019-04-01 2019-06-14 中国计量大学上虞高等研究院有限公司 A 5G high-performance LTCC bandpass filter for suppressing higher harmonics
CN110867632A (en) * 2019-12-18 2020-03-06 深圳波而特电子科技有限公司 A Loaded Capacitor Bandpass Filter Based on Ceramic Dielectric Materials

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