CN102610883A - 90-MHz low-insertion-loss micro low pass filter - Google Patents
90-MHz low-insertion-loss micro low pass filter Download PDFInfo
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Abstract
The invention discloses a 90-MHz low-insertion-loss micro low pass filter, comprising a 50-ohm impedance input port mounted on a surface, a first grounding capacitor, a first level parallel resonance unit, a second grounding capacitor, a second level parallel resonance unit, a third grounding capacitor, a third level parallel resonance unit, a fourth grounding capacitor, a 50-ohm impedance output port mounted on the surface, and a grounding end. According to the invention, the 90-MHz low-insertion-loss micro low pass filter has the advantages of low insertion loss, small volume, light weight and high reliability, and is widely applied to civil open frequency bands such as FM (frequency modulation) broadcasting, personal mobile communication and television signal transmission, and corresponding systems.
Description
Technical field
The present invention relates to a kind of miniature low pass filter that can be widely used in civilian open frequency range in occasion such as FM (frequency modulation) broadcasting, personal mobile communication and TV signal transmission and the corresponding system, have that the loss of insertion is low, volume is little, in light weight, reliability advantages of higher.
Background technology
Low pass filter is the important passive device of radio-frequency front-end part.Good low pass filter is low Insertion Loss in band, in the outer high inhibition of band, and has precipitous frequency cutoff characteristic and as far as possible little volume, particularly machine system under the main trend that miniaturization and lightness develop, and seems more important.
Traditional low pass filter adopts planar structure usually, or the LC filter is realized.Volume ratio is bigger, is difficult to satisfy the demand of radio-frequency front-end miniaturization, and traditional low pass filter not only size is big, and debugging is complicated, and cost is high, be difficult to realize in enormous quantities, exempt to debug, low-cost, highly reliable and demand that performance is excellent.
For high-k ε is just sought in the effort that the demand that satisfies the communication equipment miniaturization is initial
r, high quality factor Q and low frequency-temperature coefficient τ
fMicrowave dielectric material, reduce size, thereby obtain less single microwave device by resonator.
But only rely on traditional thickness, film and HTCC technology still not to find a kind of method for designing that effectively reduces dimensioned area.
Summary of the invention
In order to overcome the problem that exists in the above-mentioned prior art, the object of the present invention is to provide that a kind of loss is low, volume is little, in light weight, reliability is high, the temperature performance good stability, electrical property is excellent, rate of finished products is high, electrical property consistency is good in batches, cost is low, realize that mounted on surface (SMD) and self band shielding prevent the low pass microfilter of electromagnetic interference.This filter adopts 7 rank elliptic filter principles, and realizes equivalent lumped circuit model through the LTCC laminated construction.Lumped inductance adopts the vertical spin inductance, utilizes through hole to realize interconnected between the different layers; Wherein several kinds of electric capacity adopt (VIC) structure, and this implementation can significantly reduce the size of filter.
The technical scheme that realizes the object of the invention is:
The low miniature low pass filter of Insertion Loss of a kind of 90 megahertzes comprises input port Port1; Output port Port2; It is characterized in that input port Port1 links to each other with the input of first order parallel resonance unit L1, C1; The output of first order parallel resonance unit L1, C1 links to each other with the input of parallel resonance unit, second level L2, C2; The output of parallel resonance unit, second level L2, C2 links to each other with third level parallel resonance unit L3, C3 input, and third level parallel resonance unit L3, C3 output link to each other with output port Port2; Between input port Port1 and first order parallel resonance unit L1, C1 tie point and the ground the first ground capacity C4 is arranged; Between first order parallel resonance unit L1, C1 and parallel resonance unit, second level L2, C2 tie point and the ground the second ground capacity C5 is arranged; Between parallel resonance unit, second level L2, C2 and third level parallel resonance unit L3, C3 tie point and the ground the 3rd ground capacity C6 is arranged, the 4th ground capacity C7 is arranged between third level parallel resonance unit L3, C3 and output port Port2 tie point and the ground.
What said inductance L 1, L2, L3 taked is the vertical spin inductance, utilizes through hole to realize interconnected between the different layers.
What said capacitor C 1, C2, C3, C4, C5, C6, C7 taked is the capacity plate antenna structure, and it is realized through pole plate between the different layers.
Said the 2nd, 22,24 metal levels are metal ground, and these three layers link together through sidewall;
The present invention compared with prior art; Owing to adopted 3 D stereo integrated morphology and multilayer LTCC technology to realize its structure; Then utilize space coupling and Distribution Effect to realize the element in the circuit; Then make its structure very compact, then its remarkable advantage has: (1) loss is low, volume is little, in light weight, reliability is high; (2) electrical property is excellent, as: the passband Insertion Loss is low, reflection loss is little; (3) the electrical property temperature stability is high; (4) the circuit implementation structure is simple; (5) electrical property consistency is good, can realize producing in enormous quantities; (6) cost is low; (7) easy to install and use, can install and welding with full-automatic chip mounter; (8) be specially adapted to occasions such as FM (frequency modulation) broadcasting, personal mobile communication and TV signal transmission, and volume, weight, performance, reliability are had in the harsh corresponding system that requires.
Below in conjunction with accompanying drawing and embodiment the present invention is done further explain.
Description of drawings
Fig. 1 is the electrical schematic diagram of the low miniature low pass filter of Insertion Loss of the present invention's 90 megahertzes.
Fig. 2 is the profile and the internal structure sketch map of the low miniature low pass filter of Insertion Loss of the present invention's 90 megahertzes.
Fig. 3 is the metal-layer structure sketch map of the low miniature low pass filter of Insertion Loss of the present invention's 90 megahertzes.
Fig. 4 is the simulation result that the miniature low pass filter of the low Insertion Loss of the present invention's 90 megahertzes is implemented.
Embodiment
In conjunction with Fig. 1, Fig. 2, the present invention has the oval low pass filter in seven rank at three zero points, describes in this three dimensional realization mode to it:
As shown in Figure 3 from top to bottom altogether picture 25 layers, the encapsulation of the superiors and lower floor is not drawn.Among Fig. 3, the 1st layer of metal is positioned at the 1st layer medium to be admired above the plate, and the 2nd layer of metallic conductor is positioned at the 2nd, 3 layer of medium to be admired in the middle of the plate, and the 3rd layer of metal is positioned in the middle of the 3rd, 4 laminar substrates, and by that analogy, the 25th layer of metal is positioned at the 25th layer of medium and admires above the plate.The metal of each layer all adopts the LTCC typography to be printed on the upper surface of medium substrate in the 1st layer to the 27th layer, and the metal of lowermost encapsulated layer is printed on the lower surface of substrate, and all medium substrate materials all are the LTCC pottery.
The 1st metal conductor layer is an alignment mark.The 2nd, 22,24 metal conductor layers are metal ground, and this three-layer metal ground links together through sidewall.Two pole plates that the electric capacity (C1) of first order parallel resonance unit (L1, C1) is are made up of the metallic plate that is positioned at the 3rd and 4 layer of metal conductor layer respectively.A pole plate of the electric capacity (C2) of parallel resonance unit, the second level (L2, C2) is positioned at the 4th metal level, and another pole plate is positioned at the 3rd and 5 metal conductor layers; Both connect through through hole, constitute dull and stereotyped interdigital capacitor.A pole plate of the electric capacity (C2) of third level parallel resonance unit (L3, C3) is positioned at the 4th metal level, and another pole plate is positioned at the 3rd and is connected with 5 metal conductor layers and through through hole, constitutes dull and stereotyped interdigital capacitor.A pole plate of first ground capacity (C4) is positioned at the 23rd metal level, and another pole plate is 24 layers of metal ground, constitutes capacity plate antenna.A pole plate of second ground capacity (C5) is positioned at the 21st metal level and is connected with the 23rd metal level and through through hole, and another pole plate is the 21st metal level and is connected with the 23rd metal level metal ground and through through hole, constitutes dull and stereotyped interdigital capacitor.A pole plate of the 3rd ground capacity (C6) is positioned at the 21st metal level and is connected with the 23rd metal level and through through hole, and another pole plate is the 21st metal level and is connected with the 23rd metal level metal ground and through through hole, constitutes dull and stereotyped interdigital capacitor.A pole plate of the 4th ground capacity (C7) is positioned at the 23rd metal level, and another pole plate is 24 layers of metal ground, constitutes capacity plate antenna.
6th, the inductance of 7,8,9,10,11,12,13,14,15,16,17,18,19,20 layers of formation is the vertical spin inductance; Each layer all is to be microstrip line coiled rectangle or 3/4 rectangle of 100 μ m by width, and inciting somebody to action up and down through vertical through hole then, two-layer microstrip line links together.The spiral inductance on the left side is L1, and middle spiral inductance is L2, and the spiral inductance on the right is L3.The top of a L1 and L3 inductance is all at the 6th metal level, and the terminal is at the 20th metal level.The top of L2 is positioned at the 20th metal level, and the terminal is positioned at the 6th metal level.The top of L1 is connected with input port, and the terminal of L3 is connected with output port, and the top of the terminal of L1 and L2 connects together through metallic plate, and the terminal of L2 and the top of L3 also are to connect together through metallic plate.
It is characterized in that: the low miniature low pass filter of Insertion Loss of a kind of 90 megahertzes comprises input port (Port1); Output port (Port2); It is characterized in that input port (Port1) links to each other with the input of first order parallel resonance unit (L1, C1); The output of first order parallel resonance unit (L1, C1) links to each other with the input of parallel resonance unit, the second level (L2, C2); The output of parallel resonance unit, the second level (L2, C2) links to each other with third level parallel resonance unit (L3, C3) input, and third level parallel resonance unit (L3, C3) output links to each other with output port (Port2); Between input port (Port1) and first order parallel resonance unit (L1, C1) tie point and the ground first ground capacity (C4) is arranged; Between first order parallel resonance unit (L1, C1) and parallel resonance unit, the second level (L2, C2) tie point and the ground second ground capacity (C5) is arranged; Between parallel resonance unit, the second level (L2, C2) and third level parallel resonance unit (L3, C3) tie point and the ground the 3rd ground capacity (C6) is arranged, between third level parallel resonance unit (L3, C3) and output port (Port2) tie point and the ground the 4th ground capacity (C7) is arranged.
In the low miniature low pass filter of Insertion Loss of the present invention's 90 megahertzes; First order parallel resonance unit (L1, C1) is formed in parallel by first inductance (L1) and first electric capacity (C1); Parallel resonance unit, the second level (L4, C4) is formed in parallel by second inductance (L2) and second electric capacity (C2), and third level parallel resonance unit (L3, C3) is formed in parallel by the 3rd inductance (L3) and the 3rd electric capacity (C3).
In conjunction with Fig. 3; In the low miniature low pass filter of Insertion Loss of 90 megahertzes; 50 ohmage output ports (Port2) of 50 ohmage input ports (Port1) of mounted on surface interface, first ground capacity (C4), first order parallel resonance unit (L1, C1), second ground capacity (C5), parallel resonance unit, the second level (L2, C2), the 3rd ground capacity (C6), third level parallel resonance unit (L3, C3), the 4th ground capacity (C7), earth terminal (Ground), mounted on surface interface and earth terminal all adopt multilayer LTCC technology to realize; Wherein the 3rd inductance (L3) of second inductance (L2) of first inductance (L1) of first order parallel resonance unit (L1, C1), parallel resonance unit, the second level (L2, C2) and third level parallel resonance unit (L3, C3) all adopts lump type vertical spin inductance to realize, second electric capacity (C2) of first electric capacity (C1) of first order parallel resonance unit (L1, C1), parallel resonance unit, the second level (L2, C2), the 3rd electric capacity (C3), first ground capacity (C4), second ground capacity (C5), the 3rd ground capacity (C6) and the 4th ground capacity (C7) of third level parallel resonance unit (L3, C3) are all adopted the matter capacity plate antenna with being situated between and realized.
The low miniature low pass filter of Insertion Loss of the present invention's 90 megahertzes is owing to be to adopt multilayer LTCC technology to realize; Be that low-temperature co-burning ceramic material and metallic pattern form at about 900 ℃ of sintering temperatures; So have extreme high reliability and temperature stability; 3 D stereo is integrated to be grounded and to encapsulate with multilayer folding structure and outer surface metallic shield because structure adopts; Thereby volume is significantly reduced, and the low miniature low pass filter of Insertion Loss of the present invention's 90 megahertzes is of a size of 1.6mm * 3.2mm * 1.3mm, and weight is less than 0.05 gram.In conjunction with Fig. 4, very little at the Insertion Loss at 90MHz place in its main performance test result, this Insertion Loss is less than 1dB, even Insertion Loss is also very little when 100MHz, is slightly larger than 1dB.
To sum up, the LTCC low pass filter of consideration encapsulating structure provided by the invention has that volume is little, compact conformation, frequency-selecting performance are good, can process _ become the surface mount elements form, is convenient to other microwave components integrated.And low pass filter of the present invention is, based on LTCC technology, low cost of manufacture be fit to be produced in batches.
It should be noted that; Above-mentioned specific embodiment only is exemplary; Under above-mentioned instruction of the present invention, those skilled in the art can carry out various improvement and distortion on the basis of the foregoing description, and these improve or distortion drops in protection scope of the present invention.
It will be understood by those skilled in the art that top specific descriptions just for explaining the object of the invention, are not to be used to limit the present invention.Protection scope of the present invention is limited claim and equivalent thereof.
Claims (3)
1. the low miniature low pass filter of Insertion Loss of a megahertz is characterized in that: comprise 50 ohmage input ports (Port1), first ground capacity (C4), first order parallel resonance unit (L1, C1), second ground capacity (C5), parallel resonance unit, the second level (L2, C2), the 3rd ground capacity (C6), third level parallel resonance unit (L3, C3), the 4th ground capacity (C7) of mounted on surface, the 50 ohmage output ports (Port2) and the earth terminal (Ground) of mounted on surface; Connect successively between input port (Port1) and the output port (Port2) first order parallel resonance unit (L1, C1), parallel resonance unit, the second level (L2, C2) and third level parallel resonance unit; Connect first ground capacity (C4) between input (Port1) and the first order parallel resonance unit; Be connected to second ground capacity (C5) between first order parallel resonance unit (L1, C1) and parallel resonance unit, the second level (L2, the C2); Be connected to the 3rd ground capacity (C6) between parallel resonance unit, the second level (L2, C2) and third level parallel resonance unit (L3, the C3), be connected to the 4th ground capacity (C7) between third level parallel resonance unit (L3, C3) and the output (Port2).
2. the low miniature low pass filter of Insertion Loss of 90 megahertzes according to claim 1 is low; It is characterized in that: first order parallel resonance unit (L1, C1) is formed in parallel by first inductance (L1) and first electric capacity (C1); Parallel resonance unit, the second level (L2, C2) is formed in parallel by second inductance (L2) and second electric capacity (C2), and third level parallel resonance unit (L3, C3) is formed in parallel by the 3rd inductance (L3) and the 3rd electric capacity (C3).
3. 90 megahertzes according to claim 1 and 2 hang down the miniature low pass filter of Insertion Loss; It is characterized in that: 50 ohmage output ports (Port2) of 50 ohmage input ports (Port1) of mounted on surface interface, first ground capacity (C4), first order parallel resonance unit (L1, C1), second ground capacity (C5), parallel resonance unit, the second level (L2, C2), the 3rd ground capacity (C6), third level parallel resonance unit (L3, C3), the 4th ground capacity (C7) mounted on surface interface and earth terminal all adopt multilayer LTCC technology to realize; Wherein the 3rd inductance (L3) of second inductance (L2) of first inductance (L1) of first order parallel resonance unit (L1, C1), parallel resonance unit, the second level (L2, C2), third level parallel resonance unit (L3, C3) all adopts little band spiral inductance to realize that second electric capacity (C2) of first electric capacity (C1) of first order parallel resonance unit (L1, C1), parallel resonance unit, the second level (L2, C2) and the 3rd electric capacity (C3) of third level parallel resonance unit (L3, C3) are realized by media plate electric capacity; First ground capacity (C4), second ground capacity (C5), the 3rd ground capacity (C6) and the 4th ground capacity (C7) are to be realized by media plate and ground plate.
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| CN2012100778767A CN102610883A (en) | 2012-03-22 | 2012-03-22 | 90-MHz low-insertion-loss micro low pass filter |
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| CN2012100778767A CN102610883A (en) | 2012-03-22 | 2012-03-22 | 90-MHz low-insertion-loss micro low pass filter |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820503A (en) * | 2012-08-20 | 2012-12-12 | 上海交通大学 | Half-lumped miniaturized microwave filter and design method thereof |
| CN103078158A (en) * | 2013-01-28 | 2013-05-01 | 南京理工大学 | L-band miniature low-pass filter |
| CN103606724A (en) * | 2013-11-25 | 2014-02-26 | 海能达通信股份有限公司 | Power device and micro-strip filter thereof |
| CN104218913A (en) * | 2014-08-11 | 2014-12-17 | 中国电子科技集团公司第五十五研究所 | C-waveband high-performance LTCC (low temperature co-fired ceramic) low pass filter |
| CN104835999A (en) * | 2015-05-21 | 2015-08-12 | 南京理工大学 | VLF (very low frequency) ultra-narrow band low-pass filter |
| CN104980118A (en) * | 2014-04-03 | 2015-10-14 | 深圳振华富电子有限公司 | Laminated-type ceramic radio-frequency low pass filter and preparation method therefor |
| CN106230395A (en) * | 2016-08-28 | 2016-12-14 | 戴永胜 | A kind of height suppression UHF waveband low noise amplifier module |
| CN108322197A (en) * | 2018-04-09 | 2018-07-24 | 广东风华高新科技股份有限公司 | A kind of LTCC low-pass filters |
| CN109361370A (en) * | 2018-08-30 | 2019-02-19 | 南京理工大学 | A miniaturized ultra-steep low-pass filter |
| CN110022133A (en) * | 2019-04-24 | 2019-07-16 | 电子科技大学 | A kind of miniaturization inductive type variable band-pass filter and preparation method thereof |
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| CN1581780A (en) * | 2003-08-13 | 2005-02-16 | 台达电子工业股份有限公司 | Front-end modules for wireless network systems |
| CN102354777A (en) * | 2011-07-18 | 2012-02-15 | 西安瓷芯电子科技有限责任公司 | LTCC (Low Temperature Co-fired Ceramic) lowpass filter |
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| JP2002280853A (en) * | 2001-03-16 | 2002-09-27 | Tdk Corp | Apc circuit for high frequency power amplifier |
| CN1581780A (en) * | 2003-08-13 | 2005-02-16 | 台达电子工业股份有限公司 | Front-end modules for wireless network systems |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820503A (en) * | 2012-08-20 | 2012-12-12 | 上海交通大学 | Half-lumped miniaturized microwave filter and design method thereof |
| CN102820503B (en) * | 2012-08-20 | 2015-06-17 | 上海交通大学 | Half-lumped miniaturized microwave filter and design method thereof |
| CN103078158A (en) * | 2013-01-28 | 2013-05-01 | 南京理工大学 | L-band miniature low-pass filter |
| CN103606724A (en) * | 2013-11-25 | 2014-02-26 | 海能达通信股份有限公司 | Power device and micro-strip filter thereof |
| CN103606724B (en) * | 2013-11-25 | 2016-09-07 | 海能达通信股份有限公司 | A kind of power apparatus and microstrip filter thereof |
| CN104980118A (en) * | 2014-04-03 | 2015-10-14 | 深圳振华富电子有限公司 | Laminated-type ceramic radio-frequency low pass filter and preparation method therefor |
| CN104218913A (en) * | 2014-08-11 | 2014-12-17 | 中国电子科技集团公司第五十五研究所 | C-waveband high-performance LTCC (low temperature co-fired ceramic) low pass filter |
| CN104835999A (en) * | 2015-05-21 | 2015-08-12 | 南京理工大学 | VLF (very low frequency) ultra-narrow band low-pass filter |
| CN106230395A (en) * | 2016-08-28 | 2016-12-14 | 戴永胜 | A kind of height suppression UHF waveband low noise amplifier module |
| CN106230395B (en) * | 2016-08-28 | 2019-04-05 | 深圳波而特电子科技有限公司 | A kind of height inhibition UHF waveband low noise amplifier module |
| CN108322197A (en) * | 2018-04-09 | 2018-07-24 | 广东风华高新科技股份有限公司 | A kind of LTCC low-pass filters |
| CN109361370A (en) * | 2018-08-30 | 2019-02-19 | 南京理工大学 | A miniaturized ultra-steep low-pass filter |
| CN110022133A (en) * | 2019-04-24 | 2019-07-16 | 电子科技大学 | A kind of miniaturization inductive type variable band-pass filter and preparation method thereof |
| CN110022133B (en) * | 2019-04-24 | 2022-07-15 | 电子科技大学 | A miniaturized inductively coupled tunable bandpass filter and its preparation method |
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Application publication date: 20120725 |