CN208521025U - A kind of low infrared transmittivity cutoff filter - Google Patents
A kind of low infrared transmittivity cutoff filter Download PDFInfo
- Publication number
- CN208521025U CN208521025U CN201821230580.3U CN201821230580U CN208521025U CN 208521025 U CN208521025 U CN 208521025U CN 201821230580 U CN201821230580 U CN 201821230580U CN 208521025 U CN208521025 U CN 208521025U
- Authority
- CN
- China
- Prior art keywords
- low
- coating
- infrared
- filter
- infrared cut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Surface Treatment Of Optical Elements (AREA)
Abstract
本实用新型公开的属于红外截止滤光片技术领域，具体为一种低红外透过率红外截止滤光片，包括基材，所述基材的上表面通过电子束蒸镀镀有氟化镁薄膜层，所述氟化镁薄膜层的上表面通过电子束蒸镀交替镀有高折射材料镀层和低折射材料镀层，该低红外透过率红外截止滤光片的制备方法的具体制备步骤如下：S1：基材表面镀氟化镁薄膜层，S2：高、低折射率材料交替镀膜，本方案重新设计红外截止滤光片的镀膜膜系，优化镀膜工艺，降低红外截止滤光片在930‑950nm波段的透过率，达到与生物识别功能产品搭配使用。
The utility model discloses and belongs to the technical field of infrared cut-off filters, in particular to a low-infrared transmittance infrared cut-off filter, comprising a base material, the upper surface of which is deposited with magnesium fluoride by electron beam evaporation The thin film layer, the upper surface of the magnesium fluoride thin film layer is alternately plated with a high-refractive material coating and a low-refractive material coating by electron beam evaporation, and the specific preparation steps of the preparation method of the low-infrared transmittance infrared cut-off filter are as follows : S1: Magnesium fluoride thin film coating on the surface of the substrate, S2: Alternate coating of high and low refractive index materials, this scheme redesigns the coating film system of the infrared cut filter, optimizes the coating process, and reduces the infrared cut filter at 930 ‑950nm transmittance, which can be used with biometric products.
Description
Technical field
The utility model relates to cutoff filter technical field, specially a kind of low infrared transmittivity infrared cutoff filter
Mating plate.
Background technique
The transmitance of infrared light district is to measure a weight of mobile phone camera module group cutoff filter optical quality
Index is wanted, is especially proposed more with transmitance of the cutoff filter of bio-identification function being used cooperatively to infrared light district
High requirement.In the 930-950nm wave band that bio-identification optical filter generallys use, at present in industry cutoff filter can
The transmitance of light-exposed wave band requires generally in Tavg≤0.5%；Tmax≤1%, and the practical transmitance of product is general in industry
In Tavg≤0.03%, Tmax≤0.05%.Due to the use of bio-identification infrared band, this transmitance cannot
Meet the requirement of camera imaging.
Utility model content
The purpose of this utility model is to provide a kind of low infrared transmittivity cutoff filters, to solve above-mentioned background
In the current industry proposed in technology cutoff filter visible light wave range transmitance require generally Tavg≤
0.5%；Tmax≤1%, and the practical transmitance of product is generally in Tavg≤0.03%, Tmax≤0.05% in industry.Due to
The problem of use of bio-identification infrared band, this transmitance is no longer satisfied the requirement of camera imaging.
To achieve the above object, the utility model provides the following technical solutions: a kind of low infrared transmittivity infrared cutoff filter
The upper surface of mating plate, including substrate, the substrate is coated with magnesium fluoride film layer, the magnesium fluoride film layer by electron beam evaporation plating
Upper surface high-refraction material coating and low refractive material coating are alternately coated with by electron beam evaporation plating.
Preferably, the substrate is smalt substrate.
Preferably, the high-refraction material coating and low refractive material coating are respectively silica coating and five oxidations three
Titanium coating.
Preferably, the thickness of coating of the high-refraction material coating is 20nm-200nm.
Preferably, the low refractive material coating with a thickness of 80nm-250nm.
Compared with prior art, the utility model has the beneficial effects that this programme redesigns cutoff filter
Membrane system is plated, coating process is optimized, cutoff filter is reduced in the transmitance of 930-950nm wave band, reaches and know with biology
Other functional product collocation uses.
Detailed description of the invention
FIG. 1 is a schematic structural view of the utility model；
Fig. 2 is the preparation flow figure of the utility model；
Fig. 3 is the lab diagram of the utility model embodiment.
In figure: 1 substrate, 2 magnesium fluoride film layers, 3 high-refraction material coating, 4 low refractive material coating.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Referring to Fig. 1, the utility model provides a kind of technical solution: a kind of low infrared outer light cutoff filter of infrared transmittivity
The upper surface of piece, including substrate 1, substrate 1 is coated with magnesium fluoride film layer 2, the upper table of magnesium fluoride film layer 2 by electron beam evaporation plating
Face is alternately coated with high-refraction material coating 3 and low refractive material coating 4 by electron beam evaporation plating.
Wherein, substrate 1 is smalt substrate, and high-refraction material coating 3 and low refractive material coating 4 are respectively silica
Coating and titanium pentoxide coating, the thickness of coating of high-refraction material coating 3 are 20nm-200nm, low refractive material coating 4
With a thickness of 80nm-250nm.
Specific preparation process is as follows (as shown in Figure 2) for the preparation method of the low infrared transmittivity cutoff filter:
S1: magnesium fluoride film layer 2 is plated in 1 surface of substrate: in 1 surface of substrate magnesium fluoride film by way of electron beam evaporation plating
Layer 2, stands magnesium film layer 2 to be fluorinated for the substrate 1 after plated film and forms；
S2: high-index material and low-index material successively high and low refractive index material alternate plating: are passed through into electron beam
The mode of vapor deposition is plated on the substrate 1 after plating magnesium fluoride film layer 2 in step sl, and high-index material and low-index material exist
Electron beam evaporation plating is carried out under vacuum state, and to the processing of plated film rear surface.
As shown in figure 3, triangle endpoint is the transmission of the transmission spectrum curve of 0 ° of angle in 920-960nm wave band
Rate；Circular end points are the transmitance of the transmission spectrum curve of 30 ° of angles in 920-960nm wave band.
0 ° of practical transmitance is in Tavg=0.00013%, Tmax=0.0002%；And 30 ° of practical transmitances are in Tavg=
0.0002%, Tmax=0.00039%.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821230580.3U CN208521025U (en) | 2018-08-01 | 2018-08-01 | A kind of low infrared transmittivity cutoff filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821230580.3U CN208521025U (en) | 2018-08-01 | 2018-08-01 | A kind of low infrared transmittivity cutoff filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208521025U true CN208521025U (en) | 2019-02-19 |
Family
ID=65333952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821230580.3U Active CN208521025U (en) | 2018-08-01 | 2018-08-01 | A kind of low infrared transmittivity cutoff filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208521025U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108761613A (en) * | 2018-08-01 | 2018-11-06 | 湖北五方光电股份有限公司 | A kind of low infrared transmittivity cutoff filter and preparation method thereof |
-
2018
- 2018-08-01 CN CN201821230580.3U patent/CN208521025U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108761613A (en) * | 2018-08-01 | 2018-11-06 | 湖北五方光电股份有限公司 | A kind of low infrared transmittivity cutoff filter and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206339678U (en) | Cutoff filter | |
| CN206710633U (en) | A kind of low cutoff filter and camera module partially | |
| CN110133783B (en) | A kind of manufacturing method of infrared narrowband filter | |
| JP4854552B2 (en) | Antireflection film and optical component having the same | |
| CN109655954A (en) | Optical filter and preparation method thereof, fingerprint recognition mould group and electronic equipment | |
| CN103443662A (en) | Optical member and method for producing same | |
| CN108802883A (en) | A kind of technology of preparing of low reflection cutoff filter | |
| CN111796353A (en) | Optical filter and method of forming the same | |
| CN106054299B (en) | A kind of cutoff filter and its film plating process of easy cleaning | |
| CN203433138U (en) | Low warping degree infrared cutoff filter | |
| CN203164460U (en) | A kind of antireflection filter with diamond film | |
| CN111399095A (en) | Optical element, method of manufacturing optical element, and optical lens | |
| CN204166153U (en) | A kind of spectro-film and beam splitter | |
| CN208521025U (en) | A kind of low infrared transmittivity cutoff filter | |
| CN105568227B (en) | A kind of homogeneity bilayer hafnium oxide antireflective film and preparation method thereof | |
| CN204462434U (en) | Day and night bandpass filter | |
| WO2023065627A1 (en) | Optical filter and manufacturing method therefor | |
| CN102540282B (en) | A kind of preparation method of dual-band high-efficiency anti-reflection film | |
| JP2012141594A (en) | Antireflection film and optical element | |
| CN108761613A (en) | A kind of low infrared transmittivity cutoff filter and preparation method thereof | |
| CN101900848B (en) | Resin base narrow-band negative film filter system, optical filter and preparation method thereof | |
| CN107193071A (en) | Narrow band pass filter and its film plating process | |
| CN206872679U (en) | A kind of visible light broadband anti-reflection glass | |
| CN209117901U (en) | A kind of ultra-thin plastic rubber substrate type cutoff filter | |
| CN116497320A (en) | Efficient film coating method and infrared cut-off filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A low infrared transmittance infrared cut-off filter Granted publication date: 20190219 Pledgee: Bank of China Limited Jingzhou Branch Pledgor: HUBEI W-OLF PHOTOELECTRIC CO.,LTD. Registration number: Y2024980058390 |