CN207869070U - Active biased darlington structure amplifier - Google Patents
Active biased darlington structure amplifier Download PDFInfo
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- CN207869070U CN207869070U CN201721899821.9U CN201721899821U CN207869070U CN 207869070 U CN207869070 U CN 207869070U CN 201721899821 U CN201721899821 U CN 201721899821U CN 207869070 U CN207869070 U CN 207869070U
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- amplifier
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- darlington structure
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Abstract
The utility model is related to electronic communication fields, and in particular to a kind of active biased darlington structure amplifier provides a kind of active biased darlington structure amplifier, including active bias circuit, amplifying circuit and termination power；The active bias circuit is used to enhance the current stability of amplifying circuit；The amplifying circuit is for being amplified circuit input signal；The termination power is for separating external voltage；The active bias circuit, amplifying circuit and termination power electrical connection.The utility model uses active biased darlington structure amplifier, amplifier tube current stability is set to enhance, the curent change under high/low temperature is effectively resisted, to ensureing steady operation of the circuit in wide temperature range, effectively reducing the noise of amplifier and widening gain amplifier bandwidth.
Description
Technical field
The utility model is related to electronic communication fields, and in particular to a kind of active biased darlington structure amplifier.
Background technology
Critical component of the low-noise amplifier as receiver, performance largely determine the reception of receiver
Sensitivity.In recent years, with the development of ULTRA-WIDEBAND RADAR, ultra-wideband communication system, the demand to broad-band receiver increases severely, into
And the demand to broadband low-noise amplifier is come into being.Wideband can be realized using the low-noise amplifier of darlington structure
Band requires, circuit diagram such as Fig. 1, and design core is mainly Darlington transistor, and Darlington transistor is also known as composite crystal
Pipe, it links together the collector of two or more transistors composition, and using composite joint by the way of by previous crystal
The emitter of pipe is directly connected to the base stage of latter transistor, is then sequentially connected.Darlington feedback amplifier can provide more
The excellent properties of aspect, such as broadband property, High Linear, implement it is small and be easy to external module cascade characteristic, in width
It is widely used in band amplifier.
BJT (bipolar junction transistor) or GaAs HBT (arsenic are used traditional darlington amplifier (schematic diagram such as Fig. 1)
Gallium heterojunction bipolar transistor) technique realizes there is good broadband properties, but, high/low temperature work electricity big with noise coefficient
The shortcomings of rheologyization is big.Darlington amplifier biasing circuit uses electric resistance partial pressure, divider resistance to bear feedback function, completes amplification
The design of the impedance matching of device input port and gain flatness.In fact, this mode makes amplifier operation electric current easily by temperature
The influence of variation, resistor network resistance value is stablized under high/low temperature, and amplifier tube core cut-in voltage and IV characteristic curves exist
Variation, the voltage that divider resistance is provided by amplifier tube can not follow-up amplifier required voltage under high/low temperature, cause height
The big device operating current variation of low temperature is greatly.GaAs is used using GaAs HBT technological designs the low noise amplifier chip ratios
Technological design low-noise amplifier noise coefficient is big, while Darlington by pHEMT (GaAs pseudo potential high electron mobility transistor)
The amplifier tube that exists for of electric current adds additional noise source in feedback path in structure, and amplifier noise is made to greatly increase, this with
The demand of wideband low noise is disagreed.
Utility model content
Technical problem to be solved in the utility model is to overcome traditional darlington amplifier operating current is unstable to ask
Topic.
Technical solution adopted by the utility model to solve its technical problems is：A kind of active biased darlington structure is provided
Amplifier, including active bias circuit, amplifying circuit and termination power；The active bias circuit is for enhancing amplifying circuit
Current stability；The amplifying circuit is for being amplified circuit input signal；The termination power is for separating external electrical
Pressure；The active bias circuit, amplifying circuit and termination power electrical connection.
Further, the active bias circuit includes resistance and at least one amplification tube core, and the resistance is for dividing
And current limliting.
The advantageous effect of this programme：Using active biased improvement darlington structure amplifier chip, relative to passive device
Electric resistance partial pressure, the voltage that active bias circuit is provided by amplifier tube can with follow-up amplifier under high/low temperature required voltage
Variation ensures stability of the bias voltage in temperature change, so that amplifier tube current stability is enhanced, effectively resist under high/low temperature
Curent change, to ensure steady operation of the circuit in wide temperature range.
Further, the amplifying circuit is darlington structure, including at least two amplifier tubes, wherein every amplifier tube source
Pole is connect with grid.
Further, the amplifier tube that the amplifying circuit uses is GaAs pHEMT.
The advantageous effect of this programme：Compared to conventionally employed GaAs HBT technological design low-noise amplifiers, using GaAs
PHEMT technological designs amplifier can effective noise-reduction coefficient.
Further, the amplifying circuit constitutes negative feedback paths by resistance and capacitance, and the negative feedback paths are for adjusting
Whole amplifier in mouth impedance and gain flatness.
The advantageous effect of this programme：The amplifier tube that exists for of electric current adds additional noise source in negative feedback paths, therefore
Increase capacitance in circuit, plays the role of chokes.
Further, the amplifying circuit constitutes negative feedback paths by resistance, capacitance and inductance, and the negative feedback paths are used
In adjustment amplifier in mouth impedance and gain flatness.
The advantageous effect of this programme：On the basis of a upper scheme, in addition increase inductance, plays chokes and noise reduction is same
When, it is possibility to have effect promotes the effect of amplifying circuit gain.
Further, the amplifying circuit further includes peaking inductance, and one end of the peaking inductance connects the first pHEMT and puts
Big pipe source electrode, the other end connect the 2nd pHEMT and amplify tube grid, which is used to be promoted the high-frequency gain of amplifying circuit.
The advantageous effect of this programme：The gain amplifier for promoting amplifying circuit is cascaded using at least two-stage amplifier tube, up to woods
Peaking inductance is added between pipe, further widens gain amplifier bandwidth.
Further, the termination power includes input coupling capacitance and output coupling capacitor, for separating external input
DC voltage.
To sum up, the utility model has the beneficial effects that：Using active biased darlington structure amplifier, make amplification tube current
Stability enhances, and effectively resists the curent change under high/low temperature, to ensure steady operation of the circuit in wide temperature range, has
Effect reduces the noise of amplifier and widens gain amplifier bandwidth.
Description of the drawings
Fig. 1 is the circuit diagram of traditional darlington amplifier；
Fig. 2 is the circuit diagram of the active biased darlington structure amplifier of the utility model；
Specific implementation mode
The utility model is described in further detail with reference to specific embodiment, but the embodiment party of the utility model
Formula is without being limited thereto.
The utility model provides a kind of active biased darlington structure amplifier, including active bias circuit, amplifying circuit
And termination power；The active bias circuit is used to enhance the current stability of amplifying circuit；The amplifying circuit is Darlington
Structure, including at least two pHEMT (pseudo potential high electron mobility transistor) amplifier tubes, wherein every pHEMT amplifier tube source electrode
It is connect with grid, the amplifying circuit is for being amplified circuit input signal；Feedback circuit and biasing circuit are detached, is effectively subtracted
The noise of small amplifier；The termination power includes input coupling capacitance and output coupling capacitor, externally input for separating
DC voltage；The active bias circuit, amplifying circuit and termination power electrical connection.
Active bias circuit includes resistance and at least one amplification tube core, and the resistance is for partial pressure and current limliting.Using having
Source biasing improve darlington structure amplifier chip, relative to electric resistance partial pressure, it is active biased can by the voltage that amplifier tube provides
With follow-up amplifier, required voltage changes simultaneously under high/low temperature, ensures stability of the bias voltage in temperature change,
So that amplifier tube current stability is enhanced, the curent change under high/low temperature is effectively resisted, to ensure circuit in wide temperature range
Steady operation.Using GaAs pHEMT technological designs low-noise amplifier can effective noise-reduction coefficient, adopted compared to tradition
With GaAs HBT technological design low-noise amplifiers.
Wherein, a kind of scheme is that the amplifying circuit constitutes negative feedback paths, the negative feedback paths by resistance and capacitance
For adjusting the impedance of amplifier in mouth and gain flatness；Another program is the amplifying circuit by resistance, capacitance and electricity
Sense constitutes negative feedback paths, and the negative feedback paths are for adjusting the impedance of amplifier in mouth and gain flatness.Upper one
On the basis of scheme, in addition increase inductance, plays chokes and noise reduction it is also possible to effectively promote the work of amplifying circuit gain
With.
Wherein, amplifying circuit further includes peaking inductance, and the peaking inductance is set to the first pHEMT amplifier tubes source electrode and
Between two pHEMT amplify tube grid, which is used to be promoted the high-frequency gain of amplifying circuit.It is added between Darlington transistor
Peaking inductance further widens gain amplifier bandwidth.
Fig. 2 is the physical circuit figure of the active biased darlington structure amplifier of the utility model；According to Fig.2, pseudo potential
On the one hand the grid of high electron mobility transistor FET1 connects one end of capacitance C1, the other end input radio frequency signal RF- of C1
On the other hand in is grounded after connection resistance R1 after connection two amplification tube core FET3 and FET4.In addition pseudo potential high electron mobility is brilliant
The drain electrode of the company of returning pseudo potential high electron mobility transistor FET1 is constituted anti-after the grid connection resistance R2 and capacitance C2 of body pipe FET1
Current feed circuit.On the one hand the drain electrode of the pseudo potential high electron mobility transistor FET1 connects the leakage of access amplifier tube core FET4 after R3
On the other hand pole meets output radiofrequency signal RF-out after coupled capacitor C3；In addition, pseudo potential high electron mobility transistor FET1
It is grounded after source electrode one side connecting resistance R4, pseudo potential high electron mobility transistor is connected to after on the other hand connecting peaking inductance L1
The grid of FET2；The source electrode of the pseudo potential high electron mobility transistor FET2 is directly grounded, and drain electrode after inductance L2 by connecting
To power supply.
Claims (8)
1. a kind of active biased darlington structure amplifier, it is characterised in that：Including active bias circuit, amplifying circuit and coupling
Circuit；The active bias circuit is used to enhance the current stability of amplifying circuit；The amplifying circuit is used to input circuit
Signal is amplified；The termination power is for separating external voltage；The active bias circuit, amplifying circuit and coupling electricity
Road is electrically connected.
2. active biased darlington structure amplifier as described in claim 1, it is characterised in that：The active bias circuit packet
Resistance and at least one amplification tube core are included, the resistance is for partial pressure and current limliting.
3. active biased darlington structure amplifier as described in claim 1, it is characterised in that：The amplifying circuit, which uses, to be reached
Islington structure, including at least two amplifier tubes, wherein every amplifier tube source electrode is connect with grid.
4. active biased darlington structure amplifier as claimed in claim 3, it is characterised in that：What the amplifying circuit used
Amplifier tube is GaAs pHEMT.
5. active biased darlington structure amplifier as described in claim 1, it is characterised in that：The amplifying circuit is by resistance
Negative feedback paths are constituted with capacitance, the negative feedback paths are for adjusting the impedance of amplifier in mouth and gain flatness.
6. active biased darlington structure amplifier as described in claim 1, it is characterised in that：The amplifying circuit is by electricity
Resistance, capacitance and inductance constitute negative feedback paths, and the negative feedback paths are flat for adjusting the impedance of amplifier in mouth and gain
Smooth degree.
7. active biased darlington structure amplifier as described in claim 1, it is characterised in that：The amplifying circuit further includes
One end of peaking inductance, the peaking inductance connects the first pHEMT amplifier tube source electrodes, and the other end connects the 2nd pHEMT amplifier tubes
Grid, the peaking inductance are used to be promoted the high-frequency gain of amplifying circuit.
8. active biased darlington structure amplifier as described in claim 1, it is characterised in that：The termination power includes defeated
Enter coupled capacitor and output coupling capacitor, for separating externally input DC voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721899821.9U CN207869070U (en) | 2017-12-29 | 2017-12-29 | Active biased darlington structure amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721899821.9U CN207869070U (en) | 2017-12-29 | 2017-12-29 | Active biased darlington structure amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207869070U true CN207869070U (en) | 2018-09-14 |
Family
ID=63464009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721899821.9U Active CN207869070U (en) | 2017-12-29 | 2017-12-29 | Active biased darlington structure amplifier |
Country Status (1)
| Country | Link |
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| CN (1) | CN207869070U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109450392A (en) * | 2018-12-27 | 2019-03-08 | 苏州英诺迅科技股份有限公司 | A kind of distribution emitter following amplifier |
| CN109495079A (en) * | 2018-12-29 | 2019-03-19 | 苏州英诺迅科技股份有限公司 | A kind of Darlington circuit compensating high-frequency gain |
| CN111525895A (en) * | 2020-06-17 | 2020-08-11 | 成都华光瑞芯微电子股份有限公司 | Active bias integrated circuit broadband low-noise amplifier |
| CN111756336A (en) * | 2020-07-22 | 2020-10-09 | 成都华光瑞芯微电子股份有限公司 | Improved Darlington structure broadband low-noise amplifier |
| CN113098407A (en) * | 2021-04-09 | 2021-07-09 | 成都通量科技有限公司 | Novel driving amplifier |
| CN114928336A (en) * | 2022-06-01 | 2022-08-19 | 电子科技大学 | Darlington amplifier with optimized low frequency noise function |
-
2017
- 2017-12-29 CN CN201721899821.9U patent/CN207869070U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109450392A (en) * | 2018-12-27 | 2019-03-08 | 苏州英诺迅科技股份有限公司 | A kind of distribution emitter following amplifier |
| CN109495079A (en) * | 2018-12-29 | 2019-03-19 | 苏州英诺迅科技股份有限公司 | A kind of Darlington circuit compensating high-frequency gain |
| CN111525895A (en) * | 2020-06-17 | 2020-08-11 | 成都华光瑞芯微电子股份有限公司 | Active bias integrated circuit broadband low-noise amplifier |
| CN111756336A (en) * | 2020-07-22 | 2020-10-09 | 成都华光瑞芯微电子股份有限公司 | Improved Darlington structure broadband low-noise amplifier |
| CN113098407A (en) * | 2021-04-09 | 2021-07-09 | 成都通量科技有限公司 | Novel driving amplifier |
| CN114928336A (en) * | 2022-06-01 | 2022-08-19 | 电子科技大学 | Darlington amplifier with optimized low frequency noise function |
| CN114928336B (en) * | 2022-06-01 | 2023-04-25 | 电子科技大学 | Darlington Amplifier with Optimized Low Frequency Noise |
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