CN207743245U - A light emitting diode lighting device - Google Patents
A light emitting diode lighting device Download PDFInfo
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- CN207743245U CN207743245U CN201721739625.5U CN201721739625U CN207743245U CN 207743245 U CN207743245 U CN 207743245U CN 201721739625 U CN201721739625 U CN 201721739625U CN 207743245 U CN207743245 U CN 207743245U
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- layer
- electrode
- emitting diode
- light emitting
- gan contact
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims abstract description 6
- 238000004020 luminiscence type Methods 0.000 claims description 5
- 238000003466 welding Methods 0.000 abstract 1
- 239000012634 fragment Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
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- Led Devices (AREA)
Abstract
The utility model discloses a light emitting diode lighting device. It includes chip component and LED component; the chip assembly comprises a silicon carbide substrate, an epitaxial layer grown on the silicon carbide substrate, and a P electrode and an N electrode which are arranged on the epitaxial layer; the epitaxial layer comprises an InN buffer layer, an AlGaN buffer layer, an unintended doped GaN contact layer, an N-type doped GaN contact layer, an InGaN/GaN multi-quantum well light-emitting layer, an electronic barrier layer, a P-type doped GaN contact layer and a transparent conducting layer which are sequentially stacked, an N electrode is arranged on the N-type doped GaN contact layer, a P electrode is arranged on the transparent conducting layer, and the light-emitting diode component comprises a support, a welding wire and a support electrode which are used for fixing the chip component. The utility model discloses can avoid appearing lobe of a leaf, piece phenomenon, and improve the homogeneity.
Description
Technical field
The utility model is related to lighting technical fields, more particularly to a kind of light emitting diode illuminator part.
Background technology
In recent years, nitride base light emitting diode chip is widely used in lighting area.With the big rule of light emitting diode
Mould application, for the production efficiency of light emitting diode, production cost puts forward higher requirements in market, therefore in order to which lasting reduction is made
This is caused, it is the following development trend to substitute the light emitting diode of Sapphire Substrate using the light emitting diode of silicon carbide substrates.
Currently, substrate dimension can be increased using the light emitting diode of silicon carbide substrates, but due to 6 inches or even bigger
The epitaxy technology of size is still immature, causes the light emitting diode of silicon carbide substrates not yet completely universal, main cause is exactly big
The epitaxial wafer of size is susceptible to sliver, fragment phenomenon, and epitaxial wafer lack of homogeneity in growth course, so as to cause epitaxial wafer
Product dose rate it is low, it is difficult to large-scale production.
Utility model content
The utility model can avoid the occurrence of mainly solving the technical problems that provide a kind of light emitting diode illuminator part
Sliver, fragment phenomenon, and improve uniformity.
In order to solve the above technical problems, the technical solution that the utility model uses is：A kind of light emitting diode is provided
Illuminating device, including chip assembly and light-emitting diode component；The chip assembly includes silicon carbide substrates, is grown on silicon carbide
The epitaxial layer of substrate and the P electrode on epitaxial layer and N electrode；The epitaxial layer include the InN buffer layers stacked gradually,
AlGaN buffer layers, unintentional doping GaN contact layers, n-type doping GaN contact layers, InGaN/GaN multi-quantum well luminescence layers, electronics
Barrier layer, p-type doping GaN contact layers and transparency conducting layer, the N electrode are set on the n-type doping GaN contact layers, institute
P electrode is stated on the transparency conducting layer, the light-emitting diode component include for fix the holder of the chip assembly,
Bonding wire and stent electrode.
Preferably, the transparency conducting layer is ITO layer.
Preferably, the thickness of the InN buffer layers is 10-200nm, and the thickness of the AlGaN buffer layers is 10-100nm.
The utility model has the beneficial effects that：The case where being different from the prior art, the utility model using chip assembly and
The composite construction of light-emitting diode component, and chip assembly includes silicon carbide substrates and is grown on the epitaxial layer of silicon carbide substrates,
Epitaxial layer includes the InN buffer layers stacked gradually, AlGaN buffer layers, unintentional doping GaN contact layers, n-type doping GaN contacts
Layer, InGaN/GaN multi-quantum well luminescence layers, electronic barrier layer, p-type doping GaN contact layers and transparency conducting layer, due to extension
Layer has two buffer layer, can preferably discharge the stress between silicon carbide and GaN, so as to avoid the occurrence of sliver, broken
Piece phenomenon, and uniformity is improved, it ensure that stability and luminous mass, improve service life.
Description of the drawings
Fig. 1 is the structural schematic diagram for the light emitting diode illuminator part that the utility model embodiment provides.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describing, it is clear that described embodiment is only a part of the embodiment of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
Refering to fig. 1, it is the structural schematic diagram for the light emitting diode illuminator part that the utility model embodiment provides, this practicality
The light emitting diode illuminator part of new embodiment includes chip assembly and light-emitting diode component.
Chip assembly includes silicon carbide substrates 11, is grown on the epitaxial layer 12 of silicon carbide substrates 11 and is set to epitaxial layer 12
On P electrode 13 and N electrode 14；Epitaxial layer 12 includes the InN buffer layers 121 stacked gradually, AlGaN buffer layers 122, unintentional
Adulterate GaN contact layers 123, n-type doping GaN contact layers 124, InGaN/GaN multi-quantum well luminescence layers 125, electronic barrier layer
126, p-type doping GaN contact layers 127 and transparency conducting layer 128, N electrode 14 are set on n-type doping GaN contact layers 124, P electricity
Pole 13 is set on transparency conducting layer 128, and light-emitting diode component includes for the holder (not shown) of fixed chip component, bonding wire
(not shown) and stent electrode 23.
In the present embodiment, transparency conducting layer 128 is ITO layer.The thickness of InN buffer layers 121 is 10-200nm, AlGaN
The thickness of buffer layer 122 is 10-100nm.
By the above-mentioned means, the light emitting diode illuminator part of the utility model embodiment is using chip assembly and luminous two
The composite construction of pole pipe component, and chip assembly includes silicon carbide substrates and is grown on the epitaxial layer of silicon carbide substrates, epitaxial layer
Including stack gradually InN buffer layers, AlGaN buffer layers, unintentional doping GaN contact layers, n-type doping GaN contact layers,
InGaN/GaN multi-quantum well luminescence layers, electronic barrier layer, p-type doping GaN contact layers and transparency conducting layer, due to epitaxial layer
With two buffer layer, the stress between silicon carbide and GaN can be preferably discharged, so as to avoid the occurrence of sliver, fragment
Phenomenon, and uniformity is improved, it ensure that stability and luminous mass, improve service life.
The above description is only the embodiments of the present invention, and it does not limit the scope of the patent of the present invention, every
Equivalent structure or equivalent flow shift made based on the specification and figures of the utility model, is applied directly or indirectly in
Other related technical areas are equally included in the patent within the scope of the utility model.
Claims (3)
1. a kind of light emitting diode illuminator part, which is characterized in that including chip assembly and light-emitting diode component；The chip
Component includes silicon carbide substrates, is grown on the epitaxial layer of silicon carbide substrates and the P electrode on epitaxial layer and N electrode；Institute
It includes that the InN buffer layers stacked gradually, AlGaN buffer layers, unintentional doping GaN contact layers, n-type doping GaN connect to state epitaxial layer
Contact layer, InGaN/GaN multi-quantum well luminescence layers, electronic barrier layer, p-type doping GaN contact layers and transparency conducting layer, the N
Electrode is set on the n-type doping GaN contact layers, and the P electrode is set on the transparency conducting layer, the light emitting diode group
Part includes the holder, bonding wire and stent electrode for fixing the chip assembly.
2. light emitting diode illuminator part according to claim 1, which is characterized in that the transparency conducting layer is ITO layer.
3. light emitting diode illuminator part according to claim 1, which is characterized in that the thickness of the InN buffer layers is
The thickness of 10-200nm, the AlGaN buffer layers are 10-100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721739625.5U CN207743245U (en) | 2017-12-14 | 2017-12-14 | A light emitting diode lighting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721739625.5U CN207743245U (en) | 2017-12-14 | 2017-12-14 | A light emitting diode lighting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207743245U true CN207743245U (en) | 2018-08-17 |
Family
ID=63117991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721739625.5U Expired - Fee Related CN207743245U (en) | 2017-12-14 | 2017-12-14 | A light emitting diode lighting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207743245U (en) |
-
2017
- 2017-12-14 CN CN201721739625.5U patent/CN207743245U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181026 Address after: 510000 Guangdong science and Technology Industrial Development Zone, Guangzhou, 231 and 233 podium B1B2 Building 1, two, three, four Patentee after: BOAO ZONGHENG NETWORK TECHNOLOGY Co.,Ltd. Address before: 610041 Sichuan Chengdu high tech Zone No. 1 Tianfu 69 street 1 1 unit 16 level 1610 Patentee before: SICHUAN JIUDINGZHIYUAN INTELLECTUAL PROPERTY OPERATION Co.,Ltd. Effective date of registration: 20181026 Address after: 528437 Torch Development Zone, Zhongshan City, Guangdong Province Patentee after: Zhongshan Times Electronics Co.,Ltd. Address before: 510000 Guangdong science and Technology Industrial Development Zone, Guangzhou, 231 and 233 podium B1B2 Building 1, two, three, four Patentee before: BOAO ZONGHENG NETWORK TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180817 Termination date: 20211214 |
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| CF01 | Termination of patent right due to non-payment of annual fee |