CN203850328U - PGaN epitaxial structure of GaN based LED - Google Patents
PGaN epitaxial structure of GaN based LED Download PDFInfo
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- CN203850328U CN203850328U CN201420196883.3U CN201420196883U CN203850328U CN 203850328 U CN203850328 U CN 203850328U CN 201420196883 U CN201420196883 U CN 201420196883U CN 203850328 U CN203850328 U CN 203850328U
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- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000005641 tunneling Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000003068 static effect Effects 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 41
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
The utility model discloses a PGaN epitaxial structure of a GaN based LED; the PGaN epitaxial structure comprises a substrate, a lower temperature GaN buffer layer, a first GaN non-doped layer, an N type GaN layer, an electron emission layer, a lighting quantum well layer, a PALGaN/PInGaN electron stop layer, a high temperature P type GaN layer and a P type contact layer in sequence from bottom to top; the PGaN epitaxial structure also comprises a second GaN non-doped layer positioned between the high temperature P type GaN layer and the P type contact layer. The unintentional doped u-GaN layer is arranged between the contact layer and the high temperature PGaN layer so as to lead in a quantum tunneling effect, so Ohmic resistance of a lighting diode PGaN and electrodes can be reduced, thereby improving LED external quantum efficiency and static property of the diode.
Description
Technical field
The utility model relates to the PGaN epitaxial structure of a kind of GaN base LED.
Background technology
The application of LED is more and more extensive, is mainly used in that LCD screen is backlight, LED illumination, LED show.Business-like product has illustrated the potential that III-V family element is contained invariably as the application of blue light and green luminescence diode LED.
In order to develop high brightness LED, the personnel of correlative study all over the world drop into invariably with all strength, but still have the problem that luminous intensity is low in recent ten years.Reduce device and system thermal resistance, thereby lower temperature; Optimizing LED epitaxial structure, reduce Carrier Leakage and improve injection ratio, increase radiation recombination efficiency, is two main paties that improve the high-power lower luminous intensity of LED.PGaN structure and epitaxial growth method thereof are GaN(gallium nitride always) focus of base LED research is the key that improves GaN base LED external quantum efficiency.
Utility model content
The utility model provides the PGaN epitaxial structure of a kind of GaN base LED, in contact layer and high temperature PGaN, insert the involuntary doping of one deck u-GaN and introduce a kind of quantum tunneling effect, thereby reduce the Ohmic resistance of LED P GaN and electrode, increase LED external quantum efficiency, and improve the antistatic property of diode.
Technical solution adopted in the utility model is:
The PGaN epitaxial structure of a kind of GaN base LED, comprise successively from bottom to top substrate, low temperature GaN resilient coating, a GaN non-doped layer, N-type GaN layer, electron emission layer, luminescent quantum trap layer, PAlGaN/PInGaN electronic barrier layer, high temperature P type GaN layer and P type contact layer, its improvements are also to comprise the 2nd GaN non-doped layer, and the 2nd GaN non-doped layer is between high temperature P type GaN layer and P type contact layer.
Be preferably, the thickness of the 2nd GaN non-doped layer is 5-50nm.
More preferably, the thickness of the 2nd GaN non-doped layer is 10-20nm.
Because high temperature GaN material presents N-shaped resistance under non-doping condition, when insert the 2nd GaN non-doped layer in high temperature PGaN and P type contact electrode layer after, whole system is p-n-p type tunneling structure, contribute to electronics more simply from contact layer, to be injected into PGaN, and then improve luminous efficiency and the antistatic property of LED.
The beneficial effect that adopts technique scheme to produce is:
The utility model inserts the involuntary doping of one deck u-GaN and introduces a kind of quantum tunneling effect in contact layer and high temperature PGaN, thereby reduces the Ohmic resistance of LED P GaN and electrode, increases LED external quantum efficiency, and improves the antistatic property of diode.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
Fig. 1 is structural representation of the present utility model.
1, substrate; 2, low temperature GaN resilient coating; 3, a GaN non-doped layer; 4, N-type GaN layer; 5, electron emission layer; 6, luminescent quantum trap layer; 7, PAlGaN/PInGaN electronic barrier layer; 8, high temperature P type GaN layer; 9, the 2nd GaN non-doped layer; 10, P type contact layer.
Embodiment
The PGaN epitaxial structure of a kind of GaN base LED, comprise successively from bottom to top substrate 1, low temperature GaN resilient coating 2, a GaN non-doped layer 3, N-type GaN layer 4, electron emission layer 5, luminescent quantum trap layer 6, PAlGaN/PInGaN electronic barrier layer 7, high temperature P type GaN layer 8 and P type contact layer 10, also comprise that the 2nd GaN non-doped layer 9, the two GaN non-doped layers 9 are between high temperature P type GaN layer 8 and P type contact layer 10.
Further preferred technical scheme is that the thickness of the 2nd GaN non-doped layer 9 is 5-50nm.
Further preferred technical scheme is that the thickness of the 2nd GaN non-doped layer 9 is 10-20nm.
Because high temperature GaN material presents N-shaped resistance under non-doping condition, the utility model inserts the involuntary doping of one deck u-GaN and introduces a kind of quantum tunneling effect in contact layer and high temperature PGaN, when insert the 2nd GaN non-doped layer in high temperature PGaN and P type contact electrode layer after, whole system is p-n-p type tunneling structure, reduced the Ohmic resistance of LED P GaN and electrode, contribute to electronics to be injected into PGaN from contact layer, increase LED external quantum efficiency, and then improve luminous efficiency and the antistatic property of LED.
Claims (3)
1. the PGaN epitaxial structure of a GaN base LED, comprise successively from bottom to top substrate (1), low temperature GaN resilient coating (2), a GaN non-doped layer (3), N-type GaN layer (4), electron emission layer (5), luminescent quantum trap layer (6), PAlGaN/PInGaN electronic barrier layer (7), high temperature P type GaN layer (8) and P type contact layer (10), it is characterized in that it also comprises the 2nd GaN non-doped layer (9), described the 2nd GaN non-doped layer (9) is positioned between high temperature P type GaN layer (8) and P type contact layer (10).
2. the PGaN epitaxial structure of a kind of GaN base LED according to claim 1, is characterized in that: the thickness of described the 2nd GaN non-doped layer (9) is 5-50nm.
3. the PGaN epitaxial structure of a kind of GaN base LED according to claim 2, is characterized in that: the thickness of described the 2nd GaN non-doped layer (9) is 10-20nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420196883.3U CN203850328U (en) | 2014-04-22 | 2014-04-22 | PGaN epitaxial structure of GaN based LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420196883.3U CN203850328U (en) | 2014-04-22 | 2014-04-22 | PGaN epitaxial structure of GaN based LED |
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| Publication Number | Publication Date |
|---|---|
| CN203850328U true CN203850328U (en) | 2014-09-24 |
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| CN201420196883.3U Expired - Fee Related CN203850328U (en) | 2014-04-22 | 2014-04-22 | PGaN epitaxial structure of GaN based LED |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161591A (en) * | 2015-10-22 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | GaN-based epitaxial structure capable of reducing voltage and growth method |
| CN106784207A (en) * | 2017-03-15 | 2017-05-31 | 中晟光电设备（上海）股份有限公司 | A kind of GaN base light emitting epitaxial structure and preparation method thereof |
-
2014
- 2014-04-22 CN CN201420196883.3U patent/CN203850328U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161591A (en) * | 2015-10-22 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | GaN-based epitaxial structure capable of reducing voltage and growth method |
| CN106784207A (en) * | 2017-03-15 | 2017-05-31 | 中晟光电设备（上海）股份有限公司 | A kind of GaN base light emitting epitaxial structure and preparation method thereof |
| CN106784207B (en) * | 2017-03-15 | 2018-05-11 | 中晟光电设备（上海）股份有限公司 | A kind of GaN base light emitting epitaxial structure and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140924 Termination date: 20200422 |