CN207368899U - Full-bridge LLC mode of resonance plasma electrical sources based on SiC power devices - Google Patents

Abstract

The utility model provides a full-bridge LLC resonant plasma power supply based on SiC power devices, which is characterized in that it includes a main circuit and a control circuit; the main circuit includes a rectification and filtering module, a high-frequency full-bridge inverter module, A high-frequency transformer module and a fast rectification and filtering module; the rectification and filtering module is connected to the three-phase AC input power supply, and the fast rectification and filtering module is connected to the load; wherein, the high-frequency full-bridge inverter module adopts a full-bridge inverter LLC type zero-voltage soft switch Topological structure; the high-frequency full-bridge inverter module, the high-frequency transformer module, and the fast rectification and filtering module are respectively connected to the control circuit, so as to realize the power output controlled by the control circuit. The plasma power supply has high efficiency, high power density, high reliability, can reduce the intensity of electromagnetic interference and can achieve higher power output, has good dynamic response performance, and is conducive to realizing high-speed and precise control of plasma loads.

Description

Full-bridge LLC resonant plasma power supply based on SiC power devices

technical field

The utility model patent relates to the technical field of special power supplies, specifically a full-bridge LLC resonant plasma power supply based on SiC power devices.

Background technique

Plasma power supplies are developing towards higher requirements such as high efficiency, high power density (miniaturization), high frequency and high voltage, etc., which are mainly achieved through high frequency of power devices and reduction of power consumption. At present, Si-based power devices are generally used in high-power plasma power supplies at home and abroad because of their high-voltage, high-current, and high-power characteristics; however, the performance of Si-based power devices is close to the theoretical limit determined by their material properties. The potential to increase frequency and reduce power consumption has been extremely limited.

Compared with Si power devices, the new generation of SiC power devices has significant advantages in switching performance, such as high band gap, high thermal conductivity, and critical breakdown field strength. It has good prospects for reducing volume and increasing power density. However, the application of SiC power devices in plasma power supplies is still blank; therefore, it is necessary to develop a plasma power supply based on SiC power devices to improve its power efficiency and power density.

Utility model content

The purpose of the utility model is to overcome the shortcomings and deficiencies in the prior art, and provide a SiC-based power device with high power supply efficiency, high power density, high reliability, reduced electromagnetic interference intensity, and greater power output. A full-bridge LLC resonant plasma power supply with good dynamic response performance, which is conducive to realizing high-speed and precise regulation of the plasma load.

In order to achieve the above object, the utility model is realized through the following technical scheme: a full-bridge LLC resonant plasma power supply based on SiC power devices, which is characterized in that it includes a main circuit and a control circuit; the main circuit includes sequentially connected A rectification and filtering module, a high-frequency full-bridge inverter module, a high-frequency transformer module and a fast rectification and filtering module; the rectification and filtering module is connected to the three-phase AC input power supply, and the fast rectification and filtering module is connected to the load; wherein, the high-frequency full-bridge inverter module A full-bridge inverter LLC zero-voltage soft-switching topology is adopted; the high-frequency full-bridge inverter module, high-frequency transformer module, and fast rectification filter module are respectively connected to the control circuit to realize the power output controlled by the control circuit. In the plasma power supply of the utility model, a full-bridge inverter LLC type zero-voltage soft-switching topology is adopted, which has high power density and can obtain extremely high conversion efficiency under load conditions; the resonant commutation frequency is high, which can make the main The time constant of the circuit is reduced, the control cycle is shorter, and the dynamic performance is better, which is conducive to conveniently realizing high-speed and precise regulation of the plasma load.

Preferably, the high-frequency full-bridge inverter module adopts a full-bridge inverter LLC type zero-voltage soft-switching topology, which means: the high-frequency full-bridge inverter module includes SiC power switch tube Q101, SiC power switch tube Q102, and SiC power switch tube Q103 , SiC power switch tube Q104, inductance L102, inductor L103 and capacitor C107; SiC power switch tube Q101 and SiC power switch tube Q103 are connected in series to the rectifier filter module; SiC power switch tube Q102 and SiC power switch tube Q104 are connected in series and then in parallel To the rectifier filter module; the connection between the SiC power switch tube Q101 and the SiC power switch tube Q103 and the connection point between the SiC power switch tube Q102 and the SiC power switch tube Q104 are connected through the sequentially connected inductor L103, capacitor C107 and inductor L102 The inductor L103 is connected in parallel with the high-frequency transformer module; the SiC power switch tube Q101 is also connected in parallel with a diode D109 and a capacitor C103; the SiC power switch tube Q102 is also connected in parallel with a diode D110 and a capacitor C104; the SiC power switch tube Q103 is also connected in parallel with a diode D111 and The capacitor C105; the SiC power switch tube Q104 is also connected in parallel with a diode D112 and a capacitor C106. In the utility model, the high-frequency full-bridge inverter module adopts a full-bridge inverter LLC zero-voltage soft-switching topology, which is suitable for high-voltage output applications, can improve efficiency and realize high-frequency miniaturization. High-frequency inverter technology can enhance power transfer and improve energy conversion efficiency; LLC resonance technology can increase power density and obtain extremely high conversion efficiency under load conditions; the zero-voltage soft-switching mode is realized in this way: SiC The power switch tubes Q101-Q104 use their parallel diodes D109-D112 and capacitors C103-C106 to make the parallel diodes D109-D112 conduct naturally when the capacitors C103-C106 are discharged to zero, and the SiC power switch tubes Q101-Q104 gate-source The voltage is clamped to zero. At this time, the SiC power switch tubes Q101~Q104 can be turned on to realize zero-voltage turn-on, and the zero-voltage soft switching mode can be used to realize power commutation, reduce switching losses of power devices, and meet the needs of high efficiency and high power density; The power switch tube of the high-frequency full-bridge inverter module needs to withstand a lower voltage to avoid damage to the power switch tube, and the SiC power switch tube is used as the power switch tube, and the withstand voltage value is as high as 1200V; the SiC power switch tube is connected in parallel. Can meet high power requirements.

Preferably, the high-frequency transformer module includes a high-frequency transformer T101; the fast rectification and filtering module includes a rectifier diode D113, a rectifier diode D114, a capacitor C108, a capacitor C109, and a reactance L104; the primary and high-frequency full-bridge inverter of the high-frequency transformer T101 Variable module connection; the secondary output terminal 1 of the high-frequency transformer T101 is connected to the secondary output terminal 2 of the high-frequency transformer T101 through the rectifier diode D113 and capacitor C108 connected in sequence; the secondary output terminal 3 of the high-frequency transformer T101 is connected through the rectifier diode D114 is connected to the junction of the rectifier diode D113 and the capacitor C108; the reactance L104 and the capacitor C109 are connected in parallel to the capacitor C108; the capacitor C109 is connected in parallel to the load. The fast rectification filter module adopts a full-wave rectification structure, the circuit structure is simple, and the current fluctuation range is small; the reactance L104 can realize high-performance smooth filtering, effectively improve the current ripple, and help improve the welding quality.

Preferably, both the rectifier diode D113 and the rectifier diode D114 are SiC Schottky diodes; there is no reverse recovery current, and the withstand voltage is as high as 650V, which can greatly reduce switching loss and increase switching frequency.

Preferably, the control circuit includes a resonant mode controller, a high frequency drive module, a peak current detection module, a voltage feedback module, an overvoltage detection module, an undervoltage detection module and a power supply module; the resonant mode controller is driven by a high frequency The module is connected to the high-frequency full-bridge inverter module; the high-frequency transformer module is connected to the resonance mode controller through the peak current detection module; the fast rectification and filtering module is connected to the resonance mode controller through the voltage feedback module and the overvoltage detection module; the rectification and filtering module The undervoltage detection module is connected with the resonance mode controller; the power supply module is respectively connected with the resonance mode controller and the high frequency drive module.

Preferably, the high-frequency drive module includes a high-frequency amplifier U201, a high-frequency amplifier U202, a DC blocking capacitor C201, a voltage clamp circuit one, a voltage clamp circuit two, a high-frequency pulse transformer T201 and two high-frequency drive signal generators circuit;

The resonant mode controller includes a resonant mode control chip; the resonant mode control chip includes an interface for generating a PFM1 signal and an interface for generating a PFM2 signal; the interface for generating a PFM1 signal passes through a high-frequency amplifier U201 connected in sequence, an isolation The direct capacitor C201, voltage clamping circuit one is connected to the primary input terminal one of the high frequency pulse transformer T201, and the interface for generating the PFM2 signal is connected to the high frequency pulse transformer T201 through the high frequency amplifier U202 and the voltage clamping circuit two connected in sequence The primary input terminal two is connected;

The high-frequency pulse transformer T201 has two secondary, the two high-frequency drive signal generating circuits have the same structure, and the two high-frequency drive signal generating circuits are respectively connected to the secondary of the two high-frequency pulse transformer T201 in opposite directions superior.

Preferably, the voltage clamping circuit 1 includes a diode D201 and a diode D202; the diode D201 and the diode D202 are connected and then connected to the power supply module; primary input - connection;

The second voltage clamping circuit includes a diode D203 and a diode D204; the diode D203 and the diode D204 are connected to the power supply module; the connection of the diode D203 and the diode D204 is respectively connected to the primary input end of the high-frequency amplifier U202 and the high-frequency pulse transformer T201 Two connections.

Preferably, the high-frequency drive signal generating circuit includes a resistor R201, a resistor R202, a resistor R203, a resistor R204, a resistor R205, a drain resistor R206, a capacitor C202, a capacitor C203, a diode D205, a diode D206, a diode D207, a diode D208, Zener diode ZD201, Zener diode ZD202, Zener diode ZD203 and N-type power switch tube Q201; the secondary output terminal of the high-frequency pulse transformer T201 is connected to the secondary output terminal of the high-frequency pulse transformer T201 through the sequentially connected resistor R202 and diode D205. The second output terminal of the stage is connected; the source of the N-type power switch tube Q201 is connected to the diode D206 and then connected in parallel to the resistor R202; the diode D207 is connected to the resistor R203 to form a series circuit, and then connected in series with the Zener diode ZD201 and then connected in parallel to the N-type power switch On the gate source of the tube Q201; the Zener diode ZD203 and the Zener diode ZD202 are reversely connected in parallel on the series circuit; the resistor R204, the diode D208 and the discharge resistor R206 are connected in series and parallel on the series circuit; The resistor R201 is connected in parallel with the diode D205; the capacitor C202 is connected in parallel with the Zener diode ZD201; the resistor R205 is connected in parallel with the diode D208; the capacitor C203 is connected in parallel with the discharge resistor R206;

Since the switching frequency of the SiC power switch tube is high, a larger driving power is required, thus putting forward higher requirements for the high-frequency driving module. The medium-high frequency driving module of the utility model adopts two high-frequency amplifiers to form a push-pull structure, and has enough driving power to meet the high switching frequency of the SiC power switching tube. Using the Zener diode ZD201 connected in parallel with the capacitor C202 to generate a negative voltage to accelerate the turn-off of the SiC power switch tube is beneficial to prevent the false conduction of the SiC power switch tube; The spike acts as an inhibitor.

Preferably, the resonance mode control chip refers to a resonance mode control chip modeled as NCP1395B. The resonant mode control chip model NCP1395B has a reliable and stable resonant mode, and the standby power consumption is extremely low. At the same time, it provides all the necessary functions, which greatly simplifies the design of the control circuit; its key features include a wide frequency range of 50kHz to 1.0MHz range, adjustable dead time (dead time), adjustable soft start, adjustable minimum and maximum frequency, low startup current, undervoltage detection, adjustable fault timer interval and skip cycle possibility, etc.; Protection features such as immediate shutdown or timer-based events, brownout, etc. help create a safer converter design without adding complex circuitry.

Compared with the prior art, the utility model has the following advantages and beneficial effects:

1. The plasma power supply of the utility model has higher energy efficiency and power density: all power devices of the plasma power supply adopt wide-bandgap SiC power devices, realizing high-frequency soft switching, the volume and weight of the whole machine are smaller, and the dynamic loss Lower, higher power density and efficiency, energy conversion efficiency can be as high as 98%;

2. The plasma power supply of the utility model has better dynamic response performance: the full-bridge inverter LLC type zero-voltage soft-switching topology is adopted, the resonant commutation frequency reaches 500kHz, the time constant of the main circuit is reduced, and the control cycle is shorter. Better dynamic performance; high reliability, which is conducive to improving efficiency, reducing electromagnetic interference intensity and achieving greater power output;

3. The plasma power supply of the utility model has more excellent process performance: because the utility model has a higher inverter frequency and better dynamic response performance, the utility model is easier to realize high-speed and precise control of the plasma load.

Description of drawings

Fig. 1 is a system structure block diagram of the utility model plasma power supply;

Fig. 2 is a schematic diagram of the main circuit of the utility model plasma power supply;

Fig. 3 is the circuit principle diagram of the high-frequency drive module of the utility model plasma power supply;

Fig. 4 is a schematic circuit diagram of the resonant mode controller of the plasma power supply of the present invention.

Detailed ways

The utility model is described in further detail below in conjunction with the accompanying drawings and specific embodiments.

Example

As shown in Figures 1 to 4, the full-bridge LLC resonant plasma power supply based on SiC power devices in this embodiment includes a main circuit and a control circuit; the main circuit includes a rectification and filtering module, a high-frequency full-bridge inverter module, a high-frequency Transformer module and fast rectification and filtering module; the rectification and filtering module is connected with the three-phase AC input power supply, and the fast rectification and filtering module is connected with the load.

The high-frequency full-bridge inverter module includes SiC power switch tube Q101, SiC power switch tube Q102, SiC power switch tube Q103, SiC power switch tube Q104, inductor L102, inductor L103 and capacitor C107; SiC power switch tube Q101 and SiC power switch tube Q103 connected in parallel to the rectifier filter module after being connected in series; SiC power switch tube Q102 and SiC power switch tube Q104 are connected in parallel to the rectifier filter module after being connected in series; The connection of SiC power switch tube Q104 is connected through inductance L103, capacitor C107 and inductor L102 connected in sequence; inductor L103 is connected in parallel with high-frequency transformer module; SiC power switch tube Q101 is also connected in parallel with diode D109 and capacitor C103; SiC power The switch tube Q102 is also connected in parallel with a diode D110 and a capacitor C104; the SiC power switch tube Q103 is also connected in parallel with a diode D111 and a capacitor C105; the SiC power switch tube Q104 is also connected in parallel with a diode D112 and a capacitor C106. In the utility model, the high-frequency full-bridge inverter module adopts a full-bridge inverter LLC zero-voltage soft-switching topology, which is suitable for high-voltage output applications, can improve efficiency and realize high-frequency miniaturization. High-frequency inverter technology can enhance power transfer and improve energy conversion efficiency; LLC resonance technology can increase power density and obtain extremely high conversion efficiency under load conditions; the zero-voltage soft-switching mode is realized in this way: SiC The power switch tubes Q101-Q104 use their parallel diodes D109-D112 and capacitors C103-C106 to make the parallel diodes D109-D112 conduct naturally when the capacitors C103-C106 are discharged to zero, and the SiC power switch tubes Q101-Q104 gate-source The voltage is clamped to zero, and the SiC power switch tubes Q101~Q104 can be turned on at this time to realize zero-voltage turn-on; the zero-voltage soft switching mode can be used to realize power commutation, reduce switching losses of power devices, and meet the needs of high efficiency and high power density; The power switch tube of the high-frequency full-bridge inverter module needs to withstand a lower voltage to avoid damage to the power switch tube, and the SiC power switch tube is used as the power switch tube, and the withstand voltage value is as high as 1200V; the SiC power switch tube is connected in parallel. Can meet high power requirements.

The high-frequency transformer module includes a high-frequency transformer T101; the fast rectification filter module includes a rectifier diode D113, a rectifier diode D114, a capacitor C108, a capacitor C109, and a reactance L104; the primary of the high-frequency transformer T101 is connected in parallel with the inductor L103; the high-frequency transformer T101 The secondary output terminal 1 is connected to the secondary output terminal 2 of the high-frequency transformer T101 through the rectifying diode D113 and the capacitor C108 connected in sequence; the secondary output terminal 3 of the high-frequency transformer T101 is connected to the rectifying diode D114 and the rectifying diode D113 and the capacitor C108 The connection is connected; the reactance L104 and the capacitor C109 are connected in parallel on the capacitor C108 after being connected in series; the capacitor C109 is connected in parallel with the load. The fast rectification filter module adopts a full-wave rectification structure, the circuit structure is simple, and the current fluctuation range is small; the reactance L104 can realize high-performance smooth filtering, effectively improve the current ripple, and help improve the welding quality.

Both the rectifier diode D113 and the rectifier diode D114 use SiC Schottky diodes; there is no reverse recovery current, and the withstand voltage is as high as 650V, which can greatly reduce switching losses and increase switching frequency.

The working principle of the main circuit of the plasma power supply of the utility model is as follows: firstly, the three-phase AC input power supply is connected to the rectification filter module to make the AC smooth and filtered into DC; A full-bridge inverter circuit composed of tube Q102, SiC power switch tube Q103 and SiC power switch tube Q104, two complementary PFM signals control the two power switch tubes at the opposite corner to be turned on or off at high frequency at the same time, converting DC power into high frequency sine wave alternating current; wherein diode D109, diode D110, diode D111, and diode D112 are respectively the anti-parallel diodes of SiC power switch tube Q101, SiC power switch tube Q102, SiC power switch tube Q103, and SiC power switch tube Q104; and capacitor C103 , capacitor C104, capacitor C105 and capacitor C106 are the output filter capacitors of SiC power switch tube Q101, SiC power switch tube Q102, SiC power switch tube Q103 and SiC power switch tube Q104 respectively; The high-voltage and high-frequency sine wave alternating current after voltage conversion enters the fast rectification and filtering module to become a smooth direct current; the reactance L104 can further reduce the ripple current, but because of the increase in frequency, the reactance value is greatly reduced Reduced, thereby reducing the weight and volume of the reactance. The high-frequency full-bridge inverter module modulates the output voltage value, and stabilizes the output voltage through frequency modulation to achieve constant voltage output.

The control circuit includes a resonant mode controller, a high frequency drive module, a peak current detection module, a voltage feedback module, an overvoltage detection module, an undervoltage detection module and a power supply module; the resonant mode controller communicates with the high frequency full bridge inverter module through the high frequency drive module connection; the high-frequency transformer module is connected to the resonance mode controller through the peak current detection module; the fast rectification and filtering module is connected to the resonance mode controller through the voltage feedback module and the overvoltage detection module; the rectification and filtering module is connected to the resonance mode through the undervoltage detection module The mode controller is connected; the power supply module is respectively connected with the resonant mode controller and the high-frequency drive module.

The high-frequency drive module includes a high-frequency amplifier U201, a high-frequency amplifier U202, a DC blocking capacitor C201, a voltage clamp circuit 1, a voltage clamp circuit 2, a high-frequency pulse transformer T201 and two high-frequency drive signal generating circuits;

The resonance mode controller includes a resonance mode control chip; the resonance mode control chip includes an interface for generating a PFM1 signal and an interface for generating a PFM2 signal; the interface for generating a PFM1 signal passes through a high-frequency amplifier U201 connected in sequence, a DC blocking capacitor C201, voltage clamping circuit 1 is connected to the primary input terminal of the high-frequency pulse transformer T201, and the interface for generating PFM2 signals is connected to the primary input of the high-frequency pulse transformer T201 through the high-frequency amplifier U202 and voltage clamping circuit 2 connected in sequence Terminal two connection;

The high-frequency pulse transformer T201 has two secondary sides. The two high-frequency drive signal generating circuits have the same structure, and the two high-frequency drive signal generating circuits are respectively connected to the secondary sides of the two high-frequency pulse transformer T201 in opposite directions.

The voltage clamping circuit includes a diode D201 and a diode D202; the diode D201 and the diode D202 are connected to the power supply module; the connection of the diode D201 and the diode D202 is respectively connected to the DC blocking capacitor C201 and the primary input terminal of the high-frequency pulse transformer T201 ;

The voltage clamping circuit 2 includes a diode D203 and a diode D204; the diode D203 and the diode D204 are connected to the power supply module; the connection of the diode D203 and the diode D204 is respectively connected to the primary input terminal 2 of the high-frequency amplifier U202 and the high-frequency pulse transformer T201 . Diode D201 and diode D202 and diode D203 and diode D204 can clamp the voltage value between VCC and ground.

The high-frequency drive signal generation circuit includes resistor R201, resistor R202, resistor R203, resistor R204, resistor R205, drain resistor R206, capacitor C202, capacitor C203, diode D205, diode D206, diode D207, diode D208, Zener diode ZD201, Zener diode ZD202, Zener diode ZD203 and N-type power switch tube Q201; the secondary output terminal 1 of the high-frequency pulse transformer T201 is connected to the secondary output terminal 2 of the high-frequency pulse transformer T201 through the sequentially connected resistor R202 and diode D205 The source of the N-type power switch tube Q201 is connected in parallel with the diode D206 on the resistor R202; the diode D207 is connected with the resistor R203 to form a series circuit, and then connected in series with the Zener diode ZD201 and then connected in parallel to the gate source of the N-type power switch tube Q201 above; Zener diode ZD203 and Zener diode ZD202 are reversely connected in parallel on the series circuit; resistor R204, diode D208 and discharge resistor R206 are connected in series and parallel on the series circuit; resistor R201 and diode D205 Parallel connection; capacitor C202 is connected in parallel with Zener diode ZD201; resistor R205 is connected in parallel with diode D208; capacitor C203 is connected in parallel with drain resistor R206;

The principle of one of the high-frequency drive signal generation circuits is as follows: when the secondary output terminal 1 of the high-frequency pulse transformer T201 senses output low level, and the secondary output terminal 2 of the high-frequency pulse transformer T201 senses output high level, high The secondary output terminal two of the high-frequency pulse transformer T201 outputs a high level to the output port _G1 by connecting the diode D205, resistors R204 and R205 in sequence; the secondary output terminal one of the high-frequency pulse transformer T201 connects the diode D206 and the Zener diode in sequence 201 outputs a low level to the output port _S1 ; the secondary output terminal 2 of the high-frequency pulse transformer T201 induces an output high level to charge the capacitor C202 through the diode D205 and the series connection circuit;

When the secondary output terminal 1 of the high-frequency pulse transformer T201 is induced to output a high level, and the secondary output terminal 2 of the high-frequency pulse transformer T201 is induced to output a low level, the secondary output terminal 1 of the high-frequency pulse transformer T201 is connected to the resistor in sequence. R202 and resistor R201 are connected to secondary output terminal 2 of high-frequency pulse transformer T201; the high level is divided by resistor R202 and resistor R201, and the connection between resistor R202 and resistor R201 outputs low level to Output port _G1 ; at this time, the N-type power switch tube Q201 is turned on, and the capacitor C202 starts to discharge, and the connection between the resistor R202 and the resistor R201 outputs a high level to the output port _S1 through the N-type power switch tube Q201 and the capacitor C202;

Another high-frequency drive signal generation circuit also uses the same working principle to make the output port G ₂ S ₂ generate high-frequency drive signals; the output terminals G ₁ S ₁ and G ₂ S ₂ of the two high-frequency drive signal generation circuits are connected to the high-frequency full-bridge inverter Change module connection.

Since the switching frequency of the SiC power switch tube is high, a larger driving power is required, thus putting forward higher requirements for the high-frequency driving module. The medium-high frequency driving module of the utility model adopts two high-frequency amplifiers to form a push-pull structure, and has enough driving power to meet the high switching frequency of the SiC power switching tube. Using the Zener diode ZD201 connected in parallel with the capacitor C202 to generate a negative voltage to accelerate the turn-off of the SiC power switch tube is beneficial to prevent the false conduction of the SiC power switch tube; The spike acts as an inhibitor.

The resonant mode control chip can be a digital microprocessor chip, or a dedicated resonant mode control chip; a preferred resonant mode control chip is a resonant mode control chip whose model is NCP1395B. The resonant mode control chip model NCP1395B has a reliable and stable resonant mode, and the standby power consumption is extremely low. At the same time, it provides all the necessary functions, which greatly simplifies the design of the control circuit; its key features include a wide frequency range of 50kHz to 1.0MHz range, adjustable deadtime, adjustable soft start, adjustable minimum and maximum frequency, low startup current, undervoltage detection, adjustable fault timer interval and skip cycle possibility, etc.; its protection Features such as immediate shutdown or timer-based events, brown-out, etc. help create a safer converter design without adding complex circuitry. Since it is very important to avoid resonance peaks in the resonant circuit structure, in order to make the topology work in a suitable working area, the resonant mode control chip model NCP1395B has an adjustable and precise minimum switching frequency built in.

The resonant mode control chip model NCP1395B is set as follows:

Pin F _min and pin F _max are respectively the minimum and maximum operating frequency setting terminals. Through the selection of external resistors R301 and R302, the minimum and maximum frequency values can be set, and the relationship between resistance and frequency is called nonlinear;

The pin DT is the terminal for setting the dead time, and the dead time is determined according to the external resistor R303, so as to prevent the high-frequency full-bridge inverter module from passing through the diagonal bridge arm and cause failure;

The pin C _ss is the soft-start terminal, and C301 is an external capacitor. The normal soft-start operating voltage point is 3.5V. If the feedback voltage V _fb is lower than 0.6V, the soft-start will start continuously;

Pin FB is the voltage regulator feedback terminal, in which C302 is an external capacitor, R312 and R313 are voltage divider resistors, and D302 is a voltage regulator diode. The output voltage value of the fast rectification filter module passes through the voltage feedback module, and the output voltage of the optocoupler in the voltage feedback module The two output ports are respectively connected to the input port RT and RT-RTN, and the closing and opening of the input port RT and RT-RTN are controlled by controlling the opening and closing of the optocoupler. When the input port RT and RT-RTN pass through the optocoupler When closed, the power supply divides the voltage through the resistor R312 and the resistor R313 to obtain the feedback voltage. When the feedback voltage value is 0-0.6V, the resonant mode controller is judged to be faulty; when the feedback voltage value is 0.6V-1.3V, the output waveform The frequency is fixed at the minimum value F _min ; when the feedback voltage value is 1.3V ~ 6V, the frequency change ΔF _sw is proportional to the feedback voltage ΔV _fb ; when the feedback voltage exceeds 6V, the resonant mode controller stops working. By changing the frequency to stabilize the output voltage value of the fast rectification filter module;

Pin C _timer fault detection time setting terminal, the fault detection time is set by charging and discharging the external resistor R304 and capacitor C303;

Pin BO is the undervoltage protection detection terminal, C304 is the external capacitor, and R305 is the voltage divider resistor. After the three-phase AC input power is rectified and filtered by the rectifier and filter module, the detection voltage value Brown-Down Voltage is obtained through the undervoltage detection module, and the input tube Pin BO, if the voltage value exceeds the range of 1.03V ~ 4.1V, the resonant mode controller will stop working; the output voltage value of the fast rectification and filtering module will get the detection voltage value OVP-SIG through the overvoltage detection module, when the overvoltage signal is detected , turn on the PNP transistor N301, R316 is the current limiting resistor, after the voltage VCC passes through the voltage dividing resistors R314 and R315, the voltage value on the resistor R315 is passed through the input pin BO of the diode D301, if the voltage value exceeds the range of 1.03V ~ 4.1V, Then the resonance mode controller stops working;

Pin A_GND is analog ground, pin P_GND is digital ground, connect the two grounds to GND;

Pin SW_A and pin SW_B are the low-end and high-end drive pulse output terminals respectively. Pin SW_A is the interface for generating PFM1 signal, and pin SW_B is the interface for generating PFM2 signal. It is electrically isolated by the high-frequency drive module. and amplification to generate drive signals to drive the four SiC power switch tubes of the high-frequency full-bridge inverter module and control them to be turned on or off, so as to realize the closed-loop control of the constant voltage characteristic of the output voltage to meet the set voltage value requirements;

The pin VCC is the power supply terminal, where C305 and C308 are external capacitors, and D301 is a Zener diode;

The pin F-Fault and the pin S-Fault are fast and slow fault detection pins respectively, and the feedback voltage V _fb is respectively connected to the pin F-Fault and the pin S-Fault through the resistor R309 and the resistor R308. Pin 13F-Fault has a fault-on voltage of 1.05V and a fault-off recovery voltage of 1.03V. The resonant mode controller is controlled to be on or off according to the feedback voltage value V _fb , where C306 is an external capacitor and R307 is an external resistor. The pin S-Fault fault turn-on voltage is 1.03V. The peak current detection module uses the current sensor to obtain the primary current value of the high-frequency transformer module. The primary current value flows into the resonance mode controller through the input port CS, where R306, R310 and R311 C307 is a shunt resistor, and C307 is a parallel capacitor; when a fault occurs, the timer starts counting down and turns off the resonant mode controller at the end of the time.

The voltage feedback module is used to detect the output voltage value of the fast rectification and filtering module, and the existing technology can be adopted.

The undervoltage detection module is used to detect the input voltage value of the rectification filter module, and the existing technology can be adopted.

The peak current detection module is used to obtain the current value of the primary side of the high-frequency transformer module, and the existing technology can be used.

The overvoltage detection module is used to detect the output voltage value of the fast rectification filter module, and the existing technology can be adopted.

The plasma power supply of the utility model realizes high-frequency and high-voltage output, can meet the requirements of high efficiency, high power density and miniaturization, and is a new generation of plasma power supply; its specific advantages are as follows:

1. High frequency and miniaturization: This utility model innovatively adopts full SiC power devices, and constructs a full-bridge LLC resonant plasma power supply based on full SiC power devices, which realizes high frequency and greatly reduces The volume and weight of the high-frequency transformer module, heat dissipation system and fast rectification filter module are reduced, the dynamic response is good, the dynamic loss is greatly reduced, and the performance of the whole machine is improved;

2. High efficiency: This utility model makes full use of the strong design flexibility of the resonant mode control chip of the model NCP1395B, the external circuit is simple, stable and reliable, and it is easy to realize the precise control of the plasma power supply; the LLC type soft switch commutation technology is adopted, and the high-frequency full The bridge inverter module has high energy conversion efficiency, high power density, and good reliability, which not only helps to improve efficiency, but also reduces electromagnetic interference intensity and achieves greater power output.

The above-mentioned embodiment is a preferred implementation mode of the present utility model, but the implementation mode of the present utility model is not limited by the above-mentioned embodiment, and any other changes, modifications and substitutions made without departing from the spirit and principle of the present utility model , combination, and simplification, all should be equivalent replacement methods, and are all included in the protection scope of the present utility model.

Claims (9)

1. A kind of 1. full-bridge LLC mode of resonance plasma electrical sources based on SiC power devices, it is characterised in that：Including main circuit and Control circuit；The main circuit include sequentially connected rectification filtering module, high frequency full-bridge inverting module, high frequency voltage changing module and Fast recovery rectifier filter module；The rectification filtering module is connected with three-phase alternating current input power, and fast recovery rectifier filter module is with bearing Carry connection；Wherein, high frequency full-bridge inverting module uses full-bridge inverting LLC type Zero-voltage soft switch topological structures；The high frequency is complete Bridge inverter module, high frequency voltage changing module, fast recovery rectifier filter module are connected with control circuit respectively, to realize by control circuit control Power supply output processed.
2. 2. the full-bridge LLC mode of resonance plasma electrical sources according to claim 1 based on SiC power devices, its feature exist In：The high frequency full-bridge inverting module is referred to using full-bridge inverting LLC type Zero-voltage soft switch topological structures：High frequency full-bridge is inverse Becoming module includes SiC power switch pipe Q101, SiC power switch pipe Q102, SiC power switch pipe Q103, SiC power switch pipes Q104, inductance L102, inductance L103 and capacitance C107；After SiC power switch pipe Q101 and SiC power switch pipes Q103 series connection simultaneously It is linked on rectification filtering module；Rectifying and wave-filtering mould is parallel to after SiC power switch pipe Q102 and SiC power switch pipes Q104 series connection On block；The junction of SiC power switch pipe Q101 and SiC power switch pipes Q103 and SiC power switch pipe Q102 and SiC power Connected between the junction of switching tube Q104 by sequentially connected inductance L103, capacitance C107 with inductance L102；Inductance L103 It is in parallel with high frequency voltage changing module；SiC power switch pipes Q101 is also parallel with diode D109 and capacitance C103；SiC power switch Pipe Q102 is also parallel with diode D110 and capacitance C104；SiC power switch pipes Q103 is also parallel with diode D111 and capacitance C105；SiC power switch pipes Q104 is also parallel with diode D112 and capacitance C106.
3. 3. the full-bridge LLC mode of resonance plasma electrical sources according to claim 1 based on SiC power devices, its feature exist In：The high frequency voltage changing module includes high frequency transformer T101；The fast recovery rectifier filter module include rectifier diode D113, Rectifier diode D114, capacitance C108, capacitance C109 and reactance L104；Primary and the high frequency full-bridge inverting of high frequency transformer T101 Module connects；The secondary output end one of high frequency transformer T101 by sequentially connected rectifier diode D113 and capacitance C108 with The secondary output end two of high frequency transformer T101 connects；The secondary output end threeway over commutation diode of high frequency transformer T101 D114 is connected with the junction of rectifier diode D113 and capacitance C108；Capacitance is connected in parallel on after reactance L104 and capacitance C109 series connection On C108；Capacitance C109 is in parallel with load.
4. 4. the full-bridge LLC mode of resonance plasma electrical sources according to claim 3 based on SiC power devices, its feature exist In：The rectifier diode D113 and rectifier diode D114 use SiC Schottky diode.
5. 5. the full-bridge LLC mode of resonance plasma electrical sources according to claim 1 based on SiC power devices, its feature exist In：The control circuit include resonant mode controller, high-frequency drive module, peak current detection module, voltage feedback module, Over-pressed detection module, under-voltage detection module and power supply module；The resonant mode controller passes through high-frequency drive module and high frequency Full-bridge inverting module connects；High frequency voltage changing module is connected by peak current detection module with resonant mode controller；It is quick whole Stream filter module is connected by voltage feedback module and over-pressed detection module with resonant mode controller respectively；Rectification filtering module It is connected by under-voltage detection module with resonant mode controller；Power supply module respectively with resonant mode controller and high-frequency drive mould Block connects.
6. 6. the full-bridge LLC mode of resonance plasma electrical sources according to claim 5 based on SiC power devices, its feature exist In：The high-frequency drive module includes high-frequency amplifier U201, high-frequency amplifier U202, capacitance C201, voltage clamping electricity Lu Yi, voltage clamp circuit two, high-frequency pulse transformer T201 and two high-frequency driving signal generation circuits；

   The resonant mode controller includes mode of resonance control chip；Mode of resonance control chip includes being used to produce PFM1 letters Number interface and interface for producing PFM2 signals；Interface for producing PFM1 signals passes through sequentially connected High frequency amplification Device U201, capacitance C201, voltage clamp circuit one are connected with the primary input terminal one of high-frequency pulse transformer T201, are used for The interface for producing PFM2 signals passes through sequentially connected high-frequency amplifier U202 and voltage clamp circuit two and high-frequency impulse transformation The primary input terminal two of device T201 connects；

   The high-frequency pulse transformer T201 carries two secondary, and two high-frequency driving signal generation circuit structures are identical, and two A high-frequency driving signal generation circuit is connected in the secondary of two high-frequency pulse transformer T201 in the opposite direction.
7. 7. the full-bridge LLC mode of resonance plasma electrical sources according to claim 6 based on SiC power devices, its feature exist In：The voltage clamp circuit one includes diode D201 and diode D202；After diode D201 is connected with diode D202 It is connected with power supply module；The junction of diode D201 and diode D202 respectively with capacitance C201 and high-frequency impulse transformation The primary input terminal one of device T201 connects；

   The voltage clamp circuit two includes diode D203 and diode D204；After diode D203 is connected with diode D204 It is connected with power supply module；The junction of diode D203 and diode D204 become with high-frequency amplifier U202 and high-frequency impulse respectively The primary input terminal two of depressor T201 connects.
8. 8. the full-bridge LLC mode of resonance plasma electrical sources according to claim 6 based on SiC power devices, its feature exist In：The high-frequency driving signal generation circuit include resistance R201, resistance R202, resistance R203, resistance R204, resistance R205, It is the row of letting out resistance R206, capacitance C202, capacitance C203, diode D205, diode D206, diode D207, diode D208, steady Press diode ZD201, zener diode ZD202, zener diode ZD203 and N-type power switch pipe Q201；High-frequency impulse transformation The secondary output end one of device T201 passes through sequentially connected resistance R202's and diode D205 and high-frequency pulse transformer T201 Secondary output end two connects；N-type power switch pipe Q201 source electrodes are connected in parallel on resistance R202 after being connected with diode D206；Two poles Pipe D207 connects to form sequential circuit with resistance R203, and N-type power switch is connected in parallel on after connecting afterwards with zener diode ZD201 On pipe Q201 grid source electrodes；The sequential circuit is connected in parallel on after zener diode ZD203 and zener diode ZD202 differential concatenations On；It is connected in parallel on after resistance R204, diode D208 and the row of letting out resistance R206 series connection on the sequential circuit；Resistance R201 and two poles Pipe D205 is in parallel；Capacitance C202 is in parallel with zener diode ZD201；Resistance R205 is in parallel with diode D208；Capacitance C203 with The row of letting out resistance R206 is in parallel；The both ends of capacitance C203 are connected with high frequency full-bridge inverting module respectively.
9. 9. the full-bridge LLC mode of resonance plasma electrical sources according to claim 6 based on SiC power devices, its feature exist In：The mode of resonance control chip refers to the mode of resonance control chip of model NCP1395B.