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CN101854120A - A High Efficiency Multifunctional Flyback Converter - Google Patents

A High Efficiency Multifunctional Flyback Converter Download PDF

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CN101854120A
CN101854120A CN200910048698A CN200910048698A CN101854120A CN 101854120 A CN101854120 A CN 101854120A CN 200910048698 A CN200910048698 A CN 200910048698A CN 200910048698 A CN200910048698 A CN 200910048698A CN 101854120 A CN101854120 A CN 101854120A
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CN101854120B (en
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范剑平
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Suzhou Aoxite Electronic Science & Technology Co ltd
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EMERAL TECH (JIAXING) Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The invention relates to a high-efficiency multifunctional flyback converter. The invention discloses a lossless resonant absorption circuit and integrates the operating principle of the lossless resonant absorption circuit into the operation of the flyback power converter to form a high-performance high-efficiency converter structure. In the operation of the converter, the absorption circuit can absorb leakage inductance of a transformer for energy storage at no loss to effectively suppress the over-voltage peak of a power switch. Moreover, energy stored by an absorption capacitor and the inductance of the transformer are utilized to form resonance to create zero voltage condition for the power switch to realize zero voltage switching operation. A unique self-driven synchronizing rectifier circuit in a secondary loop can further improve the efficiency of the converter.

Description

一种高效率多功能反激变换器 A High Efficiency Multifunctional Flyback Converter

背景介绍background introduction

发明所属领域Field of invention

本专利是属于电功率变换领域里的一项发明,更具体地说是一种独特的反激式功率变换器结构及其操作方式。该种变换器可以实现高效率的DC-DC电压转换或单级式功率因数调整加DC-DC电压变换的复合功能等。为电源变换装置提供了一种低成本,高性能的设计概念。This patent belongs to an invention in the field of electric power conversion, more specifically a unique flyback power converter structure and its operation method. This type of converter can realize high-efficiency DC-DC voltage conversion or the composite function of single-stage power factor adjustment plus DC-DC voltage conversion. A low-cost, high-performance design concept is provided for power conversion devices.

相关领域的描述Description of related fields

随着日益迫切的环境保护的需求人们越来越广泛地要求在各个领域使用绿色能源。这在电能使用领域里势必要求用电设备和电能转换装置进一步提高效率并使用尽量少的材料。另一个势在必行的要求则是对交流用电装置的功率因数的提高,以减少电能的传输损耗。在我们的日常生活中,众多的半导体电子设备都需要有一个把交流电能转换成直流电能的电源变换装置以便于从交流市电网络取得操作所需的直流电能。在这种情形下,如果能设计制造出一个高效率,低成本,低材料消耗并具有功率因数调节的AC-DC电源变换器,其对人们所带来的广泛的环境和经济价值是显而易见的。With the increasingly urgent demand for environmental protection, people are increasingly demanding the use of green energy in various fields. In the field of electric energy utilization, it is necessary to further improve the efficiency of electric equipment and electric energy conversion devices and use as few materials as possible. Another imperative requirement is to improve the power factor of the AC power device to reduce the transmission loss of electric energy. In our daily life, many semiconductor electronic devices need a power conversion device that converts AC power into DC power in order to obtain the DC power required for operation from the AC mains network. In this case, if an AC-DC power converter with high efficiency, low cost, low material consumption and power factor adjustment can be designed and manufactured, the extensive environmental and economic value it brings to people is obvious .

目前市场上传统的交流-直流变换器通常采用两种普遍的做法。一种是先用二极管整流桥把交流电压转换成脉动直流,用电容器滤除脉动纹波,然后用直流-直流(简称为DC-DC)变换器把滤波后的直流电压变换成所需要的电压值输出并提供直流输出和交流输入间的安全电气绝缘。这种做法的典型电路结构如图1所示。在图1中整流桥BG1把交流电压转换成脉动直流再由电容器C1滤除脉动纹波。电子功率开关Q1,变压器TX1,次级整流二极管D2及次级滤波电容C2构成一个基本的反激式DC-DC变换电路。R3和C3则是一个典型的吸收电路用以吸收变压器初级漏电感在开关过程中的储能,从而抑制其在电子开关上造成的开关电压尖峰。这里需要指出,除了反激式变换电路以外,还有其它电路结构如正激式,推挽式,半桥电路,全桥电路等均可完成DC-DC变换功能。反激式电路通常使用元件最少,成本也最低。这种电路结构通常用于功率较小的场合且功率因数也比较低。Traditional AC-DC converters currently on the market generally adopt two common approaches. One is to first use a diode rectifier bridge to convert the AC voltage into a pulsating DC, use a capacitor to filter out the pulsating ripple, and then use a DC-DC (referred to as DC-DC) converter to convert the filtered DC voltage into the required voltage value output and provide safe electrical isolation between DC output and AC input. The typical circuit structure of this approach is shown in Figure 1. In Figure 1, the rectifier bridge BG1 converts the AC voltage into a pulsating DC, and then the capacitor C1 filters out the pulsating ripple. Electronic power switch Q1, transformer TX1, secondary rectifier diode D2 and secondary filter capacitor C2 form a basic flyback DC-DC conversion circuit. R3 and C3 are a typical snubber circuit to absorb the energy stored in the primary leakage inductance of the transformer during the switching process, thereby suppressing the switching voltage peak caused by it on the electronic switch. It should be pointed out here that in addition to the flyback conversion circuit, there are other circuit structures such as forward type, push-pull type, half-bridge circuit, full-bridge circuit, etc., which can complete the DC-DC conversion function. Flyback circuits typically use the fewest components and cost the least. This circuit structure is usually used in occasions with low power and low power factor.

在用电功率较大时一般都需要在输入端加功率因数调节(缩写简称为PFC)电路以达到较高的功率因数。典型的带功率因数调节电路的交流-直流变换器如图2所示。和图1电路相比,电子开关Q11,电感L11,二极管D11和电容C11组成了功率因数调节电路。功率因数调节电路的功能主要是通过电子开关Q11的开关操作使得电感L11的电流波形的包络线维持全波整流后的正弦波形并且与整流后的脉动正弦电压同相。这样从整流桥BG1交流输入端AC1,AC2所输入的交流电流自然也维持正弦波形并且与输入电压同相,从而可以使功率因数达到接近于1的理想状态。图1和图2中的电子功率开关以MOSFET最为常用。其它类型的开关器件如双极型晶体管或IGBT等也可替代。When the power consumption is large, it is generally necessary to add a power factor adjustment (abbreviated as PFC) circuit at the input end to achieve a higher power factor. A typical AC-DC converter with a power factor adjustment circuit is shown in Figure 2. Compared with the circuit in Figure 1, the electronic switch Q11, inductor L11, diode D11 and capacitor C11 form a power factor adjustment circuit. The function of the power factor adjustment circuit is mainly to make the envelope of the current waveform of the inductor L11 maintain a full-wave rectified sinusoidal waveform and be in phase with the rectified pulsating sinusoidal voltage through the switching operation of the electronic switch Q11. In this way, the AC current input from the AC input terminals AC1 and AC2 of the rectifier bridge BG1 naturally maintains a sinusoidal waveform and is in phase with the input voltage, so that the power factor can reach an ideal state close to 1. The electronic power switches in Figure 1 and Figure 2 are most commonly used with MOSFETs. Other types of switching devices such as bipolar transistors or IGBTs can also be substituted.

图1和图2所示电路工作效率一般都比较低。图中所示的电子功率开关Q1,Q11均工作在硬开关工作状态。特别是当它们从关断转换为导通状态时由于漏极和源极间电位差从高压突变到接近于零,源漏极间寄生电容的高压储能在极短的瞬间通过开关本身强迫放电,其能量全部消耗在开关管内部转化为热能。这样既降低效率,又增加管子发热,同时也产生较强的电磁辐射。另一个损耗因素是变压器的漏电感能量。当Q1导通时电磁能量随着变压器TX1初级绕组PN1电流的增加逐渐建立起来。当Q1关断时储存于耦合电感中的电磁能量通过磁路耦合到次级绕组SN2,并使整流二极管D2导通向输出端供电。储存于漏感中的能量由于无法耦合到次级去而只好通过Q1的源漏极间电容维持流通并通过充电把能量转移到源漏电容上去。在这种情况下Q1的漏极电为可能被推得很高,甚至造成Q1过电压击穿。为了抑制这种电压过冲现象,人们通常不得不采用吸收电路来吸收并消耗这部份漏感能量。图1及图2中的R3,C3网络即是一种吸收电路。在实际应用中还有多种不同的吸收电路设计。这些电路一般为众所周知,故这里不予详述。除此以外,整流二极管D2的损耗也不可忽视。特别是在输出为低压大电流时,D2的导通压降可占到输出电压的5%到10%或甚至更高,从而导至与此成比例的功率损耗。另一方面由于二极管的非理想反向恢复特性,其所引起的开关损耗也相当可观。The circuits shown in Figures 1 and 2 generally have low operating efficiencies. The electronic power switches Q1 and Q11 shown in the figure both work in the hard switching working state. Especially when they are switched from off to on state, because the potential difference between the drain and the source changes from high voltage to close to zero, the high-voltage energy storage of the parasitic capacitance between the source and drain is forced to discharge through the switch itself in a very short moment. , all of its energy is consumed inside the switch tube and converted into heat energy. This will not only reduce the efficiency, but also increase the heat generation of the tube, and also generate strong electromagnetic radiation. Another loss factor is the leakage inductance energy of the transformer. When Q1 is turned on, electromagnetic energy is gradually built up with the increase of transformer TX1 primary winding PN1 current. When Q1 is turned off, the electromagnetic energy stored in the coupled inductor is coupled to the secondary winding SN2 through the magnetic circuit, and the rectifier diode D2 is turned on to supply power to the output terminal. The energy stored in the leakage inductance cannot be coupled to the secondary, so it can only be maintained through the source-drain capacitance of Q1 and transferred to the source-drain capacitance by charging. In this case, the drain voltage of Q1 may be pushed very high, even causing Q1 overvoltage breakdown. In order to suppress this voltage overshoot phenomenon, people usually have to use a snubber circuit to absorb and consume this part of leakage inductance energy. The R3 and C3 network in Figure 1 and Figure 2 is a kind of absorption circuit. There are many different snubber circuit designs in practical applications. These circuits are generally well known and therefore will not be described in detail here. In addition, the loss of the rectifier diode D2 cannot be ignored. Especially when the output is low voltage and high current, the turn-on voltage drop of D2 may account for 5% to 10% of the output voltage or even higher, resulting in a proportional power loss. On the other hand, due to the non-ideal reverse recovery characteristics of the diode, the switching loss caused by it is also considerable.

本发明的总结Summary of the invention

本发明的目的就是要克服上述传统变换电路的不足之处,提供一种高性能、低功耗、电路尽量简单而且成本低廉的变换器方案。本发明采用一种无损耗的有源吸收谐振电路来抑制开关过冲电压。并利用LC谐振原理使得功率开关工作于软开关或接近软开关状态。本发明还采用这种高效率变换电路来实现带功率因数调节的单级式AC-DC电压转换功能。结合无损耗有源吸收电路的优点及功率转换环节的减少,这种单级多功能转换电路可实现用更低的产品成本来达到更高的转换效率。与此同时,发明还采用了一种简单易行的同步整流电路来替代二极管整流器,从而进一步提高转换器的工作效率。The purpose of the present invention is to overcome the disadvantages of the above-mentioned traditional conversion circuit, and provide a converter solution with high performance, low power consumption, simple circuit and low cost. The invention adopts a lossless active absorbing resonant circuit to restrain the switch overshoot voltage. And the LC resonance principle is used to make the power switch work in the soft switching state or close to the soft switching state. The invention also adopts the high-efficiency conversion circuit to realize the single-stage AC-DC voltage conversion function with power factor adjustment. Combining the advantages of the lossless active snubber circuit and the reduction of power conversion links, this single-stage multifunctional conversion circuit can achieve higher conversion efficiency with lower product cost. At the same time, the invention also adopts a simple and easy synchronous rectification circuit to replace the diode rectifier, thereby further improving the working efficiency of the converter.

附图说明Description of drawings

图1所示为一典型的传统反激式变换器电路结构。Figure 1 shows a typical traditional flyback converter circuit structure.

图2所示为一传统的带功率因数调节的AC-DC变换器结构。Figure 2 shows a traditional AC-DC converter structure with power factor adjustment.

图3描述了本发明的一种带无损耗有源吸收谐振电路的高效率变换器电路结构及其原理。Fig. 3 has described the circuit structure and principle of a high-efficiency converter with lossless active absorption resonant circuit of the present invention.

图4描述了本发明的另一种带无损耗有源吸收谐振电路的高效率变器电路结构及其原理。FIG. 4 describes another high-efficiency converter circuit structure and principle with a lossless active absorption resonant circuit of the present invention.

图5描述了本发明的一种同步整流控制电路。FIG. 5 describes a synchronous rectification control circuit of the present invention.

图6描述了本发明的另一种同步整流控制电路。FIG. 6 illustrates another synchronous rectification control circuit of the present invention.

发明的详细描述Detailed description of the invention

如前所述,传统的反激式变换器漏电感的储能以及为抑制其开关过程中造成的电压尖峰而采用的消耗式吸收电路,以及功率开关管的开关损耗是反激变换器工作过程中主要的损耗因素。本发明的核心概念是利用可控的电感、电容的谐振特性来组成一种无损耗的吸收电路。该电路一方面可以无损而有效地在功率开关管关断时吸收变压器漏电感的能量而抑制开关电压尖峰。同时可以在功率开关管导通前利用吸收电路的储能和变压电感之间的谐振来为功率开关产生零电压的条件,从而实现零电压型软开关操作。其概念电路之一如图3(A)所示。在图3(A)中,N型金属氧化物场效应管(以下简称为MOSFET)Q1为主功率开关。Q1的漏极接到变压器TX1的初级绕组反相端(此处需说明反相端系指不带相位点标记的一端,反相与同相的命名为相对概念,初级的反相端和次级的反相端即为同相,反之亦然)。Q1的源极通过电流检测电阻R1接到经整流桥BG1整流后的直流电压的负端,也即直流地端PGND。TX1的初级绕组同相端则接至BG1整流后的直流正端VDC+。跨接在TX1初级绕组两端的由电容器C3和N型MOSFET Q3所组成的串联回路则为无损耗吸收电路。图3中的矩型方块CU1代表控制及驱动电路。该控制驱动电路有两个驱动输出信号DR1和DR2。DR1用来驱动Q1,DR2用来驱动Q3。CU1同时接受两个反馈输入信号。输入信号ISN1接受由R1检测到的Q1源极电流信号。输入信号VS1则为由C4、R2、R4所组成的电压检测网路所检测到的Q1漏极Q1D的电压VQ1D。C4、R2、R4所组成的电路为带分压作用的微分检测网络。通过C4传输过来的VQ1D的电压变化率由R2、R4分压后反馈给CU1控制驱动电路CU1。变压器TX1的次级输出则由D2及C2所组成的整流滤波电路最后产生所需要的直流输出Vo。As mentioned above, the energy storage of the leakage inductance of the traditional flyback converter and the consumption absorbing circuit used to suppress the voltage spike caused by the switching process, as well as the switching loss of the power switch tube are the key factors in the working process of the flyback converter. main loss factor. The core concept of the invention is to use the resonant characteristics of controllable inductance and capacitance to form a lossless absorption circuit. On the one hand, the circuit can effectively absorb the energy of the leakage inductance of the transformer without loss and suppress the switch voltage peak when the power switch tube is turned off. At the same time, before the power switch tube is turned on, the resonance between the energy storage of the absorbing circuit and the transformer inductance can be used to generate a zero voltage condition for the power switch, thereby realizing zero voltage soft switching operation. One of its conceptual circuits is shown in Figure 3(A). In FIG. 3(A), an N-type metal oxide field effect transistor (hereinafter referred to as MOSFET) Q1 is the main power switch. The drain of Q1 is connected to the inverting end of the primary winding of the transformer TX1 (it should be noted here that the inverting end refers to the end without a phase point mark, and the naming of inverting and non-inverting phases is a relative concept, and the inverting end of the primary and the secondary The inverting terminal is the non-inverting terminal, and vice versa). The source of Q1 is connected to the negative terminal of the DC voltage rectified by the rectifier bridge BG1 through the current detection resistor R1, that is, the DC ground terminal PGND. The non-inverting terminal of the primary winding of TX1 is connected to the rectified DC positive terminal VDC+ of BG1. The series loop composed of capacitor C3 and N-type MOSFET Q3 connected across the two ends of the primary winding of TX1 is a lossless absorption circuit. The rectangular block CU1 in FIG. 3 represents the control and drive circuit. The control driving circuit has two driving output signals DR1 and DR2. DR1 is used to drive Q1, and DR2 is used to drive Q3. CU1 accepts two feedback input signals simultaneously. The input signal ISN1 accepts the Q1 source current signal sensed by R1. The input signal VS1 is the voltage VQ1D of the drain Q1D of Q1 detected by the voltage detection network composed of C4, R2, and R4. The circuit composed of C4, R2, and R4 is a differential detection network with a voltage divider function. The voltage change rate of VQ1D transmitted through C4 is divided by R2 and R4 and fed back to CU1 to control the driving circuit CU1. The secondary output of the transformer TX1 is rectified and filtered by D2 and C2 to finally generate the required DC output Vo.

图3(A)电路的主要工作信号波形如图3(B)所示。在工作过程中当Q1在to开始导通时,变压器初级绕组PN1中的电流通过由VDC+经过PN1、Q1及R1到PGND的流通回路逐渐建立起来。当Q1在t1关断时,储存在PN1耦合电感部分的能量通过磁路耦合到TX1的次级绕组SN2并使D2导通,对C2及接在Vo与GND间的负载供电。而储存在PN1漏电感中的能量由于无法耦合到次级去,在保持其电流连续的规则下则会自然地对MOSFET Q1的源漏极寄生电容充电,同时也通过Q3的寄生二极管对C3进行充电,并造成这些电容上的电压持续上升直至漏感电流在t2时刻衰减为零。这时储存于漏感中的电磁能量全部转移到Q1的源漏极寄生电容和电容C3上去并使这些电容上的电压达到其峰值。C3上的电压为上负下正,这段时间如果Q3导通,则C3充电通过Q3完成。电容上的峰值电压和漏感能量的大小和电容的大小直接有关。在相同的漏感能量下,电容值越大,则漏感能量转移结束时电容上的峰值电压越小。因为这里采用的是无损耗吸收电路,故C3可以用较大的电容值,从而可以有效地降低其电压峰值,从而也使得Q1的漏极电压VQ1D被拑在较低的水平。同时由于C3和Q1源漏极寄生电容的电容量和它们所吸收的能量成正比关系。C3越大则它所吸收的能量比例也越大,而Q1寄生电容所吸收的能量则越小。Q3的控制信号波形如图3(B)所示。如图所示,从Q1在t1关断到C3电压在t2达到峰值的这段时间Q3处于导通状态,漏感能量转移到C3的过程通过Q3完成。这样既降低了Q3寄生二极管导通压降所引起的损耗,更重要的是避免了寄生二极管反向恢复特性所引起的振荡。在C3电压达到峰值时,Q3关断,其寄生二极管处于反向截止状态,C3和PN1之间的通路被切断,C3电压在接下来一段时间维持在其峰值。Figure 3 (A) The main working signal waveform of the circuit is shown in Figure 3 (B). During the working process, when Q1 starts to conduct at to, the current in the primary winding PN1 of the transformer is gradually established through the flow loop from VDC+ through PN1, Q1 and R1 to PGND. When Q1 is turned off at t1, the energy stored in the coupled inductance of PN1 is coupled to the secondary winding SN2 of TX1 through a magnetic circuit and turns D2 on, supplying power to C2 and the load connected between Vo and GND. Since the energy stored in the PN1 leakage inductance cannot be coupled to the secondary, it will naturally charge the source-drain parasitic capacitance of MOSFET Q1 under the rule of maintaining its current continuity, and also charge C3 through the parasitic diode of Q3 Charge, and cause the voltage on these capacitors to continue to rise until the leakage current decays to zero at t2. At this time, the electromagnetic energy stored in the leakage inductance is all transferred to the parasitic capacitance of the source and drain of Q1 and the capacitance C3, and the voltage on these capacitances reaches its peak value. The voltage on C3 is negative at the top and positive at the bottom. If Q3 is turned on during this period, the charging of C3 is completed through Q3. The peak voltage on the capacitor and the magnitude of the leakage inductance energy are directly related to the size of the capacitor. Under the same leakage inductance energy, the larger the capacitance value, the smaller the peak voltage on the capacitance when the leakage inductance energy transfer ends. Because a lossless absorption circuit is used here, C3 can use a larger capacitance value, which can effectively reduce its voltage peak value, so that the drain voltage VQ1D of Q1 is also clamped at a lower level. At the same time, the capacitance of the parasitic capacitance of the source and drain of C3 and Q1 is directly proportional to the energy absorbed by them. The larger C3 is, the larger the energy ratio it absorbs, and the smaller the energy absorbed by the parasitic capacitance of Q1. The control signal waveform of Q3 is shown in Fig. 3(B). As shown in the figure, Q3 is on during the period from when Q1 is turned off at t1 to when the voltage of C3 reaches its peak value at t2, and the process of transferring leakage inductance energy to C3 is completed through Q3. This not only reduces the loss caused by the turn-on voltage drop of the parasitic diode of Q3, but more importantly, avoids the oscillation caused by the reverse recovery characteristic of the parasitic diode. When the voltage of C3 reaches the peak value, Q3 is turned off, its parasitic diode is in the reverse cut-off state, the path between C3 and PN1 is cut off, and the voltage of C3 is maintained at its peak value for the next period of time.

在t1到t3期间储存在变压器初级绕组耦合电感的能量持续地转移到次级通过D2对C2和负载供电。在t3时刻这部分储能耗尽,次级电流中断,Q1的源漏寄生电容开始向变压器初级绕组放电,Q1漏极Q1D的电压开始回落。这时Q3又开始导通。储存在C3中的能量开始向变压器的初级绕组PN1转移并形成谐振。谐振的第一个1/4周期是t3至t4区间,C3的能量向PN1转移。在t4时刻C3电压下降为零而PN1的电流达到最大值。谐振的第二个1/4周期从时刻t4开始,PN1的电流开始时对C3充电,C3上的电压随着充电逐步建立起来,极性为上正下负。随着C3电压的升高,Q1D的电位相应地逐渐降低。如果谐振的能量足够大,则C3的电压可以在t5或t5之前达到和VDC+相等,这时Q1的寄生二极管导通,Q1的漏极电位接近于零,为Q1的零电压开关操作创造了条件。在t5时刻,Q3关断,Q1随后导通,从而完成了Q1的软开关操作,并开始重复下一个周期的操作过程。During t1 to t3 the energy stored in the coupled inductance of the primary winding of the transformer is continuously transferred to the secondary via D2 to power C2 and the load. At time t3, this part of the stored energy is exhausted, the secondary current is interrupted, the source-drain parasitic capacitance of Q1 starts to discharge to the primary winding of the transformer, and the voltage of Q1 drain Q1D starts to drop. At this time, Q3 starts conducting again. The energy stored in C3 starts to transfer to the primary winding PN1 of the transformer and forms a resonance. The first 1/4 period of resonance is the interval from t3 to t4, and the energy of C3 is transferred to PN1. At time t4, the voltage of C3 drops to zero and the current of PN1 reaches the maximum value. The second 1/4 period of the resonance begins at time t4, and the current of PN1 charges C3 at the beginning, and the voltage on C3 gradually builds up with the charging, and the polarity is up positive and down negative. As the voltage of C3 increases, the potential of Q1D decreases gradually accordingly. If the resonant energy is large enough, the voltage of C3 can be equal to VDC+ before t5 or t5. At this time, the parasitic diode of Q1 is turned on, and the drain potential of Q1 is close to zero, which creates conditions for the zero-voltage switching operation of Q1. . At time t5, Q3 is turned off, and Q1 is turned on subsequently, thus completing the soft switching operation of Q1 and beginning to repeat the operation process of the next cycle.

这里需要注意的是,并不是在所有情况下都可以通过谐振来创造Q1的零电压条件。当谐振能量较小时,C3的电压在第二个1/4周期结束时达不到VDC+的值,因而Q1的漏极电压也达不到零。在这种情况下,Q1和Q3的开关切换点选在VQ1D电压的最低点,也即谐振谷点。这样虽然达不到零电压开关操作,但开关损耗仍然会大大低于传统的操作方式。另外,在传统反激变换器设计中如何把变压器的漏电感做得尽量小是一个非常具有挑战性的问题,变压器漏感越大,则开关损耗越大。在本方案的情况下,变压器的漏感能量的大部分并没有消耗掉,而是通过和吸收电容C3之间的谐振为功率开关Q1创造零电压或最低电压开关条件。因此,对变压器漏电感的要求没有那样苛刻,变压器的设计制造相对来说更容易一些。It should be noted here that the zero voltage condition of Q1 can not be created by resonance in all cases. When the resonance energy is small, the voltage of C3 cannot reach the value of VDC+ at the end of the second 1/4 cycle, so the drain voltage of Q1 cannot reach zero. In this case, the switching point of Q1 and Q3 is selected at the lowest point of VQ1D voltage, that is, the resonance valley point. In this way, although the zero-voltage switching operation cannot be achieved, the switching loss will still be much lower than the traditional operation method. In addition, in the traditional flyback converter design, how to make the leakage inductance of the transformer as small as possible is a very challenging problem. The larger the leakage inductance of the transformer, the greater the switching loss. In the case of this solution, most of the leakage inductance energy of the transformer is not consumed, but creates a zero voltage or minimum voltage switching condition for the power switch Q1 through resonance with the absorbing capacitor C3. Therefore, the requirements for the leakage inductance of the transformer are not so strict, and the design and manufacture of the transformer is relatively easier.

这里同时应该指出,对于Q3的开关控制,用C4、R2、R4所组成的检测网络来监测Q1的漏极电压只是一个概念性的例子。其它种类的电压检测电路也可以用来达到同样的目的。除了检测Q1的漏极电压外,通过监测Q3的源极电流信号,也可以用来帮助控制Q3的开关操作。由于Q3的源极是浮动的,其电流信号检测一般使用电流互感变压器比较方便。为了保持图示简洁易懂,图3(A)中未画出这部分电路。在利用VSN1得到的电压信号进行控制时,Q3的开关切换点选在电压变化率的过零点。因为电压变化率的过零点也是电流的过零点。所以用电流信号控制时Q3的开关切换点选在电流的过零点。对于变换器在Vo端的输出,既可以做电压型,也可以做电流型输出控制。当需要控制输出电压时把Vo端输出电压反馈至控制驱动电路CU1来控制Q1的开关操作。而当需要控制输出电流时则把Vo或GND端的电流信号反馈至控制驱动电路CU1来控制Q1的开关操作。上述这些概念的实现方法均为业者所熟悉,故未在图3(A)中标出。另外,图3(A)电路中所用的开关器件Q1、Q3也可以用双极型NPN晶体管和反并联二极管组合来代替。其端口对应关系如图3(C)所示。At the same time, it should be pointed out that for the switch control of Q3, it is only a conceptual example to monitor the drain voltage of Q1 with a detection network composed of C4, R2, and R4. Other kinds of voltage detection circuits can also be used to achieve the same purpose. In addition to sensing the drain voltage of Q1, by monitoring the source current signal of Q3, it can also be used to help control the switching operation of Q3. Since the source of Q3 is floating, it is more convenient to use a current mutual inductance transformer for its current signal detection. In order to keep the diagram simple and easy to understand, this part of the circuit is not shown in Figure 3(A). When the voltage signal obtained by VSN1 is used for control, the switching point of Q3 is selected at the zero-crossing point of the voltage change rate. Because the zero crossing point of the voltage change rate is also the zero crossing point of the current. Therefore, when the current signal is used to control, the switching point of Q3 is selected at the zero-crossing point of the current. For the output of the converter at the Vo end, it can be used as a voltage type or a current type output control. When the output voltage needs to be controlled, the output voltage at the Vo terminal is fed back to the control drive circuit CU1 to control the switching operation of Q1. And when the output current needs to be controlled, the current signal at the Vo or GND terminal is fed back to the control drive circuit CU1 to control the switching operation of Q1. The implementation methods of the above concepts are familiar to those in the industry, so they are not shown in FIG. 3(A). In addition, the switching devices Q1 and Q3 used in the circuit of FIG. 3(A) can also be replaced by a combination of a bipolar NPN transistor and an antiparallel diode. The corresponding relationship of the ports is shown in Fig. 3(C).

图3(A)所示电路既可以实现没有PFC功能的AC-DC变换功能,也可以实现带有PFC功能的单级式AC-DC变换器。在不需要PFC功能时C1的电容量可以选得比较大,这样经C1滤波后的VDC+接近纯直流。当需要PFC功能时,C1电容量则选得比较小,其电容量只要足够滤除Q1的高频开关操作所产生的纹波,而对交流输入经BG1整流后的低频正弦脉动电压则基本没有滤波作用。这VDC+基本保持正弦交流经全波整流后的正弦脉动波形。这时Q1和PN1的电流包络线控制以VDC+的正弦脉动波形为参考信号,最终通过Q1的开关控制使得从交流输入端AC1和AC2输入的电流呈正弦波形并且和输入电压同相而达到功率因数接近于1的效果。注意在这种情况下变压器次级的电流也和初级一样跟随VDC+的低频正弦脉动波形,所以C2需要用较大容量的电容来滤除这些低频脉动成分。如果对输出电压的纹波系数要求严格,则在C2之后还可以考虑再加一级LC滤波电路。这里需要强调,如果没有图3(A)中的无损耗谐振吸收电路,由变压器TX1的漏电感而引起的开关损耗将会大大地减低这种单级式PFC综合功能的AC-DC变换器的效率。由于图3(A)中无损耗谐振吸收电路的采用,变压器漏电感在开关过程中的储能不仅没有消耗掉,反而被利用起来减低功率开关的开关损耗,所以整体效率会大大地高于图2中所示的传统两级式变换电路,从而提供了一种效率高,使用材料少,产品成本低的绿色交流到直流变换器方案。The circuit shown in Fig. 3(A) can not only realize the AC-DC conversion function without PFC function, but also realize the single-stage AC-DC converter with PFC function. When the PFC function is not needed, the capacitance of C1 can be selected relatively large, so that the VDC+ filtered by C1 is close to pure DC. When the PFC function is required, the capacitance of C1 is selected to be relatively small, as long as the capacitance is enough to filter out the ripple generated by the high-frequency switching operation of Q1, and there is basically no low-frequency sinusoidal pulsating voltage for the AC input rectified by BG1 filtering effect. This VDC+ basically maintains the sinusoidal pulsation waveform of sinusoidal AC after full-wave rectification. At this time, the current envelope control of Q1 and PN1 takes the sinusoidal ripple waveform of VDC+ as the reference signal, and finally through the switch control of Q1, the current input from the AC input terminals AC1 and AC2 has a sinusoidal waveform and is in phase with the input voltage to achieve a power factor. effect close to 1. Note that in this case, the secondary current of the transformer also follows the low-frequency sinusoidal pulsation waveform of VDC+ like the primary, so C2 needs to use a large-capacity capacitor to filter out these low-frequency pulsation components. If the requirement on the ripple coefficient of the output voltage is strict, it is also possible to consider adding an LC filter circuit after C2. It should be emphasized here that if there is no lossless resonant snubber circuit in Figure 3(A), the switching loss caused by the leakage inductance of the transformer TX1 will greatly reduce the performance of this single-stage PFC integrated AC-DC converter. efficiency. Due to the use of the lossless resonant snubber circuit in Figure 3(A), the energy stored in the leakage inductance of the transformer during the switching process is not consumed, but is used to reduce the switching loss of the power switch, so the overall efficiency will be much higher than that shown in Figure 3(A). The traditional two-stage conversion circuit shown in 2 provides a green AC-to-DC converter solution with high efficiency, less material use and low product cost.

图4(A)所示为采用另一种无损耗谐振吸收电路的变换器电路。对图中和图3(A)所示相同的电路部分这里不再赘述。和图3(A)不同的地方主要在于C3和Q3从跨接于PN1两端变成了跨接在Q1漏极和初级直流功率地PGND之间。Q3也由N型MOSFET换成了P型MOSFET,并且在Q3源极和PGND之间串接了一个电流检测电阻R3,把Q3的电流信号反馈到控制驱动电路CU1的反馈输入端ISN2。如[0012]节中所述,Q3的电流反馈信号也可以用来帮助控制Q3的开关操作,而且在图4(A)中R3上的电流信号是以PGND为参考点的,所以反馈电路非常简单方便。用P型MOSFET的原因是因为其寄生二极管和N型MOSFET的极性相反,而N型MOSFET寄生二极管的极性使得在图4(A)电路中C3对PN1的放电过程无法受控。Q3使用P型MOSFET一般来讲不如用N型MOSFET来得方便,但因其源极以PGND为参考点,门极驱动信号不需要浮动,驱动电路较为简单。Figure 4(A) shows a converter circuit using another lossless resonant snubber circuit. The circuit parts that are the same as those shown in FIG. 3(A) will not be repeated here. The main difference from Figure 3(A) is that C3 and Q3 are connected between the drain of Q1 and the primary DC power ground PGND instead of being connected across PN1. Q3 is also replaced by a P-type MOSFET from an N-type MOSFET, and a current detection resistor R3 is connected in series between the source of Q3 and PGND to feed back the current signal of Q3 to the feedback input terminal ISN2 of the control drive circuit CU1. As mentioned in Section [0012], the current feedback signal of Q3 can also be used to help control the switching operation of Q3, and the current signal on R3 in Figure 4(A) is based on PGND as the reference point, so the feedback circuit is very easy and convenient. The reason for using P-type MOSFET is because the polarity of its parasitic diode is opposite to that of N-type MOSFET, and the polarity of the parasitic diode of N-type MOSFET makes the discharge process of C3 to PN1 in the circuit of Figure 4 (A) uncontrollable. Generally speaking, it is not as convenient to use P-type MOSFET for Q3 as to use N-type MOSFET, but because the source uses PGND as the reference point, the gate drive signal does not need to float, and the drive circuit is relatively simple.

图4(A)中Q1和Q3的开关控制规则和图3(A)中电路一样。其主要信号波形如图4(B)所示。在时刻to至t1区间Q1导通,变压器初级绕组电流在VDC+的作用下流经PN1、Q1、R1并线性增长。to至t1的导通脉冲宽度由对Vo端输出电压或电流的调节要求经过控制驱动电路CU1的PWM调制电路决定。在t1时刻Q1关断,Q3导通将其寄生二极管旁路。PN1的漏电感能量对C3充电直至这部分能量全部转移到C3。在t2时刻C3电压达到峰值,而流过Q3的电流降到零点。这时Q3关断,C3电压维持在峰值状态。在这期间,储存在PN1耦合电感中的能量持续耦合到次级向C2和Vo端负载供电。当这部分能量在t3时刻耗尽时,变压器次级绕组电流衰减至零。初级绕组PN1两端下正上负的电压及Q1漏极Q1D的电压开始回落。这时Q3重新导通使C3和PN1的电感通过谐振进行能量交换。在谐振的第一个1/4周期t3~t4区间,C3所储存的能量逐步转移为PN1的电感电流,直至VQ1D在t4等于VDC+,这时PN1的电流达到最大值。在谐振的第二个1/4周期t4~t5PN1的电感电流经VDC+、C1、R3及Q3向C3反向充电。在时刻t5 PN1中的电感能量耗尽,Q3电流下降到零,Q1漏极电压VQ1D下降到谷底。如果谐振能量足够大,C3电压和Q1漏极电压可以被推至零,为Q1的零电压开关操作创造条件。当Q1漏极电压被推至零或谷底时,Q3关断,Q1门极驱动信号使Q1导通,从而实现了零电压或最低电压开关操作。The switching control rules of Q1 and Q3 in Figure 4(A) are the same as those of the circuit in Figure 3(A). Its main signal waveform is shown in Fig. 4(B). Q1 is turned on in the interval from time to to t1, and the transformer primary winding current flows through PN1, Q1, and R1 under the action of VDC+ and increases linearly. The on-pulse width from to to t1 is determined by the PWM modulation circuit controlling the driving circuit CU1 according to the regulation requirement of the output voltage or current of the Vo terminal. At t1, Q1 is turned off, and Q3 is turned on to bypass its parasitic diode. The leakage inductance energy of PN1 charges C3 until all the energy is transferred to C3. At t2, the voltage of C3 reaches a peak value, and the current flowing through Q3 drops to zero. At this time, Q3 is turned off, and the voltage of C3 is maintained at the peak state. During this period, the energy stored in the PN1 coupling inductance is continuously coupled to the secondary side to supply power to the C2 and Vo end loads. When this part of energy is exhausted at t3, the transformer secondary winding current decays to zero. The positive and negative voltages at both ends of the primary winding PN1 and the voltage at the drain Q1D of Q1 begin to drop. At this time, Q3 is turned on again so that the inductance of C3 and PN1 can exchange energy through resonance. During the first 1/4 period of resonance between t3 and t4, the energy stored in C3 is gradually transferred to the inductor current of PN1 until VQ1D is equal to VDC+ at t4, and the current of PN1 reaches the maximum value at this time. In the second 1/4 period of resonance, the inductance current from t4 to t5PN1 reversely charges C3 through VDC+, C1, R3 and Q3. At time t5 the inductor energy in PN1 is depleted, the Q3 current drops to zero, and the Q1 drain voltage VQ1D drops to the bottom. If the resonant energy is large enough, the C3 voltage and the Q1 drain voltage can be pushed to zero, creating the conditions for the zero-voltage switching operation of Q1. When the Q1 drain voltage is pushed to zero or valley, Q3 turns off and the Q1 gate drive signal turns Q1 on, thus achieving zero voltage or minimum voltage switching operation.

如在[0012]节中所描述,因为电路的谐振频率基本上由参加谐振的元件的L、C和R值所确定,所以当变压器的电感参数,C3的电容量,Q1的源漏寄生电容值及谐振回路中的电阻性阻抗确定后,其谐振频率也基本固定。基于这一电,对于从t1到t2的Q3导通时间和从t3到t5的Q3导通时间也可以根据电路的谐振频率特性进行近似的固定时间控制。也就是说,VQ1D从t1时刻开始上升到t2时刻达到峰值的时间,以及从t3时刻开始下降到t5时刻到达谷点的时间均可由电路的谐振频率来近似确定而且基本恒定,因此Q3在t1至t2和t3至t5的导通时间也可以根据这个时间来设定。在这种情况,控制驱动电路只需要通过定时电路而不是通过实时监测Q1的漏极电压VQ1D或Q3的源极电流来控制Q3的导通时间。定时电路在t1及t3时刻与Q3的门极导通信号同时启动,在t2及t5时刻达到设定的时间而关断Q3。这里需要注意在t1至t2区间的谐振过程参与谐振的电感成分为TX1初级线圈PN1的漏电感,而在t3至t5区间参与谐振的电感成分为PN1的自电感,所以这两个区间的谐振频率是不同的。As described in Section [0012], because the resonant frequency of the circuit is basically determined by the L, C and R values of the components participating in the resonance, so when the inductance parameters of the transformer, the capacitance of C3, and the parasitic capacitance of the source and drain of Q1 After the value and the resistive impedance in the resonant circuit are determined, the resonant frequency is also basically fixed. Based on this theory, the Q3 conduction time from t1 to t2 and the Q3 conduction time from t3 to t5 can also be controlled by an approximate fixed time according to the resonant frequency characteristics of the circuit. That is to say, the time when VQ1D rises from t1 to t2 reaches its peak, and the time from t3 to t5 when it reaches the valley point can be approximately determined by the resonant frequency of the circuit and is basically constant. Therefore, Q3 is between t1 and t5 The conduction time from t2 and t3 to t5 can also be set according to this time. In this case, the control driving circuit only needs to control the conduction time of Q3 through a timing circuit instead of real-time monitoring of the drain voltage VQ1D of Q1 or the source current of Q3. The timing circuit starts simultaneously with the gate-on signal of Q3 at t1 and t3, and turns off Q3 when the set time is reached at t2 and t5. It should be noted here that the inductance component participating in the resonance during the resonance process between t1 and t2 is the leakage inductance of the primary coil PN1 of TX1, and the inductance component participating in the resonance between t3 and t5 is the self-inductance of PN1, so the resonance frequency of these two intervals is different.

同样如图3(A),图4(A)中也没有画出从输出端Vo到控制驱动电路CU1的反馈信号回路。在具体应用中,如果需要控制调节的对象是输出电压,则取Vo电压信号作为反馈。如果需要控制调节的对象是输出电流,则取Vo端或GND端的输出电流信号作为反馈。这类反馈电路为本领域人士所熟悉,故这里不再赘述。同样也如图3(A)电路,图4(A)所示电路既可以实现没有PFC功能的DC-DC或AC-DC变换器,也可以通过Q1的开关操作控制使得变压器初级绕组电流的包络线跟随输入电压经全波整流后的脉动正弦波形,从而实现单级式带PFC功能的AC-DC变换器。另外图4(A)中的P型MOSFET Q3也可以用双极型PNP晶体管和反并联二极管组合来代替。如图4(C)所示。Also as shown in FIG. 3(A), the feedback signal loop from the output terminal Vo to the control drive circuit CU1 is not shown in FIG. 4(A). In a specific application, if the object to be controlled and adjusted is the output voltage, the Vo voltage signal is taken as feedback. If the object to be controlled and adjusted is the output current, the output current signal at the Vo terminal or the GND terminal is taken as feedback. This type of feedback circuit is familiar to those skilled in the art, so details will not be repeated here. Also the circuit shown in Figure 3(A), the circuit shown in Figure 4(A) can realize a DC-DC or AC-DC converter without PFC function, and can also control the primary winding current of the transformer through the switching operation of Q1 The winding line follows the pulsating sinusoidal waveform of the input voltage after full-wave rectification, thereby realizing a single-stage AC-DC converter with PFC function. In addition, the P-type MOSFET Q3 in Figure 4(A) can also be replaced by a combination of a bipolar PNP transistor and an antiparallel diode. As shown in Figure 4(C).

除了在变压器初级回路使用无损耗谐振吸收电路以外,本发明还可以在次级回路中用同步整流电路来代替传统二极管整流以进一步提高效率。以一个5V输出的变换器为例,通常采用肖特基二极管整流时,其正向压降约为0.3V到0.5V左右,和5V输出相比较,二极管正向压降所引起的损耗约占输出功率的6%到10%。同步整流通常用MOSFET来代替整流二极管,其导通压降可以控制在0.1V到0.15V之间,也即效率可以提高4%到7%左右。目前同步整流已有一些实现方法。其中一种典型的做法是在变压器次级多加一个辅助驱动绕组,利用辅助驱动绕组的电压来驱动同步整流管。这种做法控制电路相对比较简单,但变压器必须为每个同步整流管多加一个绕组。这在多路输出时会大大地增加变压器的复杂性和制作难度。另一种做法是利用一个辅助驱动变压器或光电耦合器件,把同步整流控制信号从初级控制驱动电路耦合到次级并配以相应的驱动电路来驱动同步整流管。这种做法成本会比较高,所用元件数量也比较多。In addition to using a lossless resonant absorption circuit in the primary circuit of the transformer, the present invention can also use a synchronous rectification circuit in the secondary circuit to replace the traditional diode rectification to further improve efficiency. Taking a converter with 5V output as an example, when a Schottky diode is usually used for rectification, its forward voltage drop is about 0.3V to 0.5V. Compared with the 5V output, the loss caused by the forward voltage drop of the diode accounts for about 6% to 10% of output power. In synchronous rectification, MOSFETs are often used to replace rectifier diodes, and its conduction voltage drop can be controlled between 0.1V and 0.15V, that is, the efficiency can be increased by about 4% to 7%. At present, there are some implementation methods for synchronous rectification. One of the typical methods is to add an auxiliary drive winding on the secondary side of the transformer, and use the voltage of the auxiliary drive winding to drive the synchronous rectifier. The control circuit of this approach is relatively simple, but the transformer must add an additional winding for each synchronous rectifier. This will greatly increase the complexity and fabrication difficulty of the transformer in the case of multiple outputs. Another approach is to use an auxiliary drive transformer or photocoupler to couple the synchronous rectification control signal from the primary control drive circuit to the secondary and match the corresponding drive circuit to drive the synchronous rectifier. The cost of this approach will be relatively high, and the number of components used will be relatively large.

本发明的同步整流电路如图5所示。同步整流控制信号的产生既不需要辅助驱动绕组,也不需要使用辅助变压器或光电器件从初级耦合,而是用一个独特的电路根据次级回路的电压、电流变化直接处理产生。如图5(A)所示,整流二极管D2被N型MOSFET Q2所代替,并由输出正端移到了输出地的回路。这种换位主要是为了使得Q2的源极和GND相连,这样门极驱动信号比较好处理。Q5和Q6为PNP型晶体管,组成的一个差动电路,R9接在Q5、Q6的发射极与Vo之间为公共电流源电阻。Q5的集电极输出经电阻R11和R12分压去驱动Q2的门极。Q5的基极由R5和R6在Vo和Q2的漏极之间分压驱动。而Q6基极由R7和R8在Vo和GND,也即Q2的源极之间分压驱动。R5、R6、R7和R8的参数选择使得R7的分压比略微大于R5的分压比。在R5、R6回路和R7、R8回路两端电压相等时R7上的电压略微大于R5上电压,但在R5、R6回路两端电压高于R7、R8回路大约几十毫伏时,R5的压降高于R7的电压降。这样当Q2的源漏极电压降为零时,Q6优先导通,Q5截止,Q2也处于关断状态。在电路工作中当Q1关断后,变压器次级绕组的电压为上正下负。该电压需要上升到比C2两端电压(也即输出电压)高出一个Q2寄生二极管的正向导通压降才可以使得次级电流形成流通回路。在这种情况下R5、R6所组成的分压回路所接受的电压高于R7、R8回路的接受的电压。而上述两个分压电路的分压比设计使得在这种情况下R5上的电压降高于R7的电压降,从而使得Q5导通,Q6截止,这样Q2的门极通过Q2从Vo获得正驱动电压,Q2导通,次级绕组电流通过Q2向C2和负载供电。当次级电流耗尽时Q2的导通压降为零,此时Q6导通,Q5截止,Q2关断,防止C2的电压通过次级绕组SN2和Q2放电。当Q1在下一个开关操作周期导通时,绕组SN2的电压变成下正上负,Q5加深截止,Q6仍处于导通状态,Q2仍然截止,继续阻止C2放电,直到Q1关断,电路重复如前所述的过程进行另一个周期的同步整流操作。The synchronous rectification circuit of the present invention is shown in FIG. 5 . The generation of the synchronous rectification control signal does not require auxiliary drive windings, nor does it need to use auxiliary transformers or photoelectric devices to couple from the primary, but uses a unique circuit to directly process and generate according to the voltage and current changes of the secondary circuit. As shown in Figure 5(A), the rectifier diode D2 is replaced by an N-type MOSFET Q2, and moved from the positive output terminal to the output ground loop. This transposition is mainly to connect the source of Q2 to GND, so that the gate drive signal is easier to handle. Q5 and Q6 are PNP transistors, which form a differential circuit. R9 is connected between the emitters of Q5 and Q6 and Vo as a common current source resistance. The collector output of Q5 is divided by resistors R11 and R12 to drive the gate of Q2. The base of Q5 is driven by a voltage divider between Vo and the drain of Q2 by R5 and R6. The base of Q6 is driven by voltage division between Vo and GND, which is the source of Q2, by R7 and R8. The parameter selection of R5, R6, R7 and R8 makes the voltage division ratio of R7 slightly larger than that of R5. When the voltage at both ends of the R5, R6 loop and the R7, R8 loop are equal, the voltage on R7 is slightly greater than the voltage on R5, but when the voltage at both ends of the R5, R6 loop is higher than the R7, R8 loop by about tens of millivolts, the voltage of R5 drop above the voltage drop across R7. In this way, when the source-drain voltage of Q2 drops to zero, Q6 is preferentially turned on, Q5 is turned off, and Q2 is also in an off state. When Q1 is turned off during circuit operation, the voltage of the secondary winding of the transformer is positive up and down negative. The voltage needs to be raised to a level higher than the voltage across C2 (that is, the output voltage) by the forward conduction voltage drop of the parasitic diode of Q2 so that the secondary current can form a circulation loop. In this case, the voltage received by the voltage divider circuit composed of R5 and R6 is higher than the voltage accepted by the circuit of R7 and R8. The design of the voltage division ratio of the above two voltage divider circuits makes the voltage drop on R5 higher than the voltage drop on R7 in this case, so that Q5 is turned on and Q6 is turned off, so that the gate of Q2 obtains a positive voltage from Vo through Q2. Drive voltage, Q2 is turned on, and the secondary winding current supplies power to C2 and the load through Q2. When the secondary current is exhausted, the turn-on voltage drop of Q2 is zero, at this time, Q6 is turned on, Q5 is turned off, and Q2 is turned off, preventing the voltage of C2 from discharging through the secondary winding SN2 and Q2. When Q1 is turned on in the next switching operation cycle, the voltage of winding SN2 becomes lower positive and upper negative, Q5 cuts off more deeply, Q6 is still in the on state, Q2 is still cut off, and continues to prevent C2 from discharging until Q1 is turned off, and the circuit repeats as follows The aforementioned process performs another cycle of synchronous rectification operation.

基于同样的操作原理,本发明的同步整流电路也可以变换成另一种结构如图5(B)所示。和图5(A)相比,图5(B)基本上为其对偶电路。Q2由N型MOS管变为P型MOS管,并且换到输出的正端回路,Q5、Q6也由PNP型晶体管变为NPN型晶体管。其工作原理和图5(A)一样,故这里不再赘述。需要提醒的是Q5、Q6也可以采用小信号MOSFET或其它有源电子器件来实现同样的功能。这里如果由Q5、Q6所组成的差动电路驱动增益不够,可在Q5集电极和Q2门极之间再插入一级同相放大电路来增加驱动能力。图6(A)和图(B)所示的Q4即为一个例子。另一种可能的做法是由Q6集电极输出再经一级反相放大器来驱动Q2的门极。因其道理显而易见,这里也不再赘述。Based on the same operating principle, the synchronous rectification circuit of the present invention can also be transformed into another structure as shown in FIG. 5(B). Compared with Fig. 5(A), Fig. 5(B) is basically its dual circuit. Q2 changes from an N-type MOS tube to a P-type MOS tube, and switches to the output positive end circuit, and Q5 and Q6 also change from PNP-type transistors to NPN-type transistors. Its working principle is the same as that in Figure 5(A), so it will not be repeated here. It should be reminded that Q5 and Q6 can also use small-signal MOSFETs or other active electronic devices to achieve the same function. Here, if the driving gain of the differential circuit composed of Q5 and Q6 is not enough, another level of non-inverting amplifier circuit can be inserted between the collector of Q5 and the gate of Q2 to increase the driving capability. Q4 shown in Figure 6(A) and Figure (B) is an example. Another possible approach is to drive the gate of Q2 through the output of the collector of Q6 through a first-stage inverting amplifier. Because the reason is obvious, it will not be repeated here.

这里同时也需要指出以上的描述和相关图示主要是作为例子来阐述本发明的原理和概念。在实际应用遵循同样的概念可以用不同的形式来实现。因此本专利的应用在不违背其基本概念的情况下并不限于本文所描述的实现方法。同样在接下来的权利声明中所描述的权利也为从原理性概念出发,在不违背其基本原理的情况下可以用不同的电路来实现。At the same time, it should also be pointed out that the above description and related diagrams are mainly used as examples to illustrate the principles and concepts of the present invention. In practice the same concept can be implemented in different forms. Therefore, the application of this patent is not limited to the implementation methods described herein without departing from its basic concept. Also, the rights described in the ensuing declaration of rights are based on a principled concept, and can be realized with different circuits without violating the basic principles.

Claims (9)

1.一个变换器电路,由一个整流桥把交流输入整流为直流,一个电容器跨在整流桥的直流输出端上,一个反激式变压器,其初级绕组的一端接到整流桥正电压输出端,另一端接至一个主电子开关的正电压端口,该电子开关的负电压端口通过电流检测元件接至整流桥的负电压输出端,一个无损耗吸收电路由一个电容器和一个辅助电子开关串接而成。电容器的一端和辅助电子开关的正电压端相串联,另一端和整流桥正电压输出节点相连,电子开关的负电压端和主电子开关的正电压端节点相连,一个由一个电容和两个电阻串联构成的电压检测网络,该网络跨接在主电子开关的正电压端口节点和整流桥负电压输出端节点之间,电容的一端接至主电子开关的正电压端口节点,另一端和两个电阻串联构成的分压网络相连,该两个串联电阻的中间节点接至一个控制驱动电路的一个反馈输入端,该控制驱动电路接受从上述电压检测网络,主电子开关电流检测元件,和次级输出端的电流或电压信号为反馈,并产生驱动信号去驱动上述主电子开关及辅助电子开关,一个整流二极管,其阳极接至反激变压器次级绕组和初级绕组接整流桥正端的端口反相的端口,阴极接至一个输出滤波电容的正端并为变换器的正输出端,该滤波电容的负端和上述变压器的次级绕组的另一端相连并成为变换器的负输出端。1. A converter circuit, a rectifier bridge rectifies the AC input to DC, a capacitor across the DC output of the rectifier bridge, a flyback transformer, one end of its primary winding is connected to the positive voltage output of the rectifier bridge, The other end is connected to the positive voltage port of a main electronic switch, the negative voltage port of the electronic switch is connected to the negative voltage output port of the rectifier bridge through the current detection element, and a lossless absorption circuit is formed by connecting a capacitor and an auxiliary electronic switch in series. become. One end of the capacitor is connected in series with the positive voltage end of the auxiliary electronic switch, the other end is connected with the positive voltage output node of the rectifier bridge, the negative voltage end of the electronic switch is connected with the positive voltage end node of the main electronic switch, one consists of a capacitor and two resistors A voltage detection network formed in series, the network is connected between the positive voltage port node of the main electronic switch and the negative voltage output node of the rectifier bridge, one end of the capacitor is connected to the positive voltage port node of the main electronic switch, the other end is connected to the two A voltage divider network composed of resistors in series is connected, and the middle node of the two series resistors is connected to a feedback input terminal of a control drive circuit, which receives signals from the above-mentioned voltage detection network, the main electronic switch current detection element, and the secondary The current or voltage signal at the output terminal is feedback, and a drive signal is generated to drive the above-mentioned main electronic switch and auxiliary electronic switch, a rectifier diode, the anode of which is connected to the secondary winding of the flyback transformer and the reverse phase of the port where the primary winding is connected to the positive end of the rectifier bridge port, the cathode is connected to the positive terminal of an output filter capacitor and is the positive output terminal of the converter, and the negative terminal of the filter capacitor is connected to the other end of the secondary winding of the above-mentioned transformer and becomes the negative output terminal of the converter. 2.另一个变换器电路,其其它部分和(1)中所描述的一样,不同处在由一个电容器和一个辅助电子开关串接而成的无损耗吸收电路跨接在主电子开关的正电压端口节点和整流桥负电压输出端之间,电容器的一端接至主电子开关的正电压端口节点,另一端和辅助电子开关的负电压端口相连接,辅助电子开关的正电压端口接至整流桥负电压输出端口。2. Another converter circuit, the other parts of which are the same as those described in (1), except that a lossless snubber circuit connected in series by a capacitor and an auxiliary electronic switch is connected across the positive voltage of the main electronic switch Between the port node and the negative voltage output terminal of the rectifier bridge, one end of the capacitor is connected to the positive voltage port node of the main electronic switch, the other end is connected to the negative voltage port of the auxiliary electronic switch, and the positive voltage port of the auxiliary electronic switch is connected to the rectifier bridge Negative voltage output port. 3.在(1)和(2)所描述的电路操作中利用无损耗谐振吸收电路来吸收主电子开关关断时的电压尖峰,并利用该吸收电路和变压器电感所形成的谐振来为主电子开关实现零电压开关或最低电压开关的操作特性,当主电子开关关断时,辅助电子开关导通,并在主开关两端电压达到最大值时关断,使得变压器漏电感能量无损耗地储存在吸收电容上,当变压器耦合电磁能量耗尽时,辅助开关再次导通并利用吸收电容和变压器初级电感的谐振特性使主开关两端电压下降,在主开关电压达到零或最低点时关断辅助开关并使主开关导通,从而实现零电压或最低电压开关导通操作。3. In the circuit operation described in (1) and (2), use a lossless resonant snubber circuit to absorb the voltage spike when the main electronic switch is turned off, and use the resonance formed by the snubber circuit and the transformer inductance to power the main electronic circuit. The switch realizes the operating characteristics of zero-voltage switching or minimum voltage switching. When the main electronic switch is turned off, the auxiliary electronic switch is turned on and turned off when the voltage at both ends of the main switch reaches the maximum value, so that the leakage inductance energy of the transformer is stored without loss in the On the absorption capacitor, when the transformer coupling electromagnetic energy is exhausted, the auxiliary switch is turned on again and uses the resonance characteristics of the absorption capacitor and the primary inductance of the transformer to reduce the voltage across the main switch. When the main switch voltage reaches zero or the lowest point, the auxiliary switch is turned off. switch and turns on the main switch, resulting in zero-voltage or minimum-voltage switch-on operation. 4.在(1)和(2)所描述的电路操作中利用监测主开关电压的变化率或辅助开关的电流来控制辅助开关的操作,当主开关关断后,使辅助开关导通,在主开关电压上升至峰值,其变化率第一次过零时,或辅助开关电流过零时,关断辅助开关,在主开关导通前,辅助开关在变压器耦合电流衰减至零时导通,这时吸收电容和变压器初级电感的谐振使主开关电压开始下降,当主开关电压下降至最低值,其变化率第一次过零时,或主开关电压为零时,或辅助开关电流过零时,关断辅助开关,然后使主开关导通。4. In the circuit operation described in (1) and (2), the operation of the auxiliary switch is controlled by monitoring the change rate of the main switch voltage or the current of the auxiliary switch. When the main switch is turned off, the auxiliary switch is turned on. When the switch voltage rises to the peak value, when its rate of change crosses zero for the first time, or when the auxiliary switch current crosses zero, the auxiliary switch is turned off, and before the main switch is turned on, the auxiliary switch is turned on when the transformer coupling current decays to zero, which When the resonance of the absorption capacitor and the primary inductance of the transformer causes the main switch voltage to drop, when the main switch voltage drops to the lowest value, the change rate crosses zero for the first time, or when the main switch voltage is zero, or when the auxiliary switch current is zero, Turn off the auxiliary switch and turn on the main switch. 5.或在(1)和(2)所描述的电路中,根据电路的固有谐振周期对辅助开关的导通时间进行定时控制,在主开关关断后,使辅助开关导通,并在维持导通大约此刻电路状态的四分之一个谐振周期后将辅助开关关断,当变压器绕组中耦合电流衰减为零时,使辅助开关导通并在维持导通大约此刻电路状态的二分之一个谐振周期后将辅助开关关断,然后使主开关导通。5. Or in the circuit described in (1) and (2), the conduction time of the auxiliary switch is regularly controlled according to the natural resonance period of the circuit, and after the main switch is turned off, the auxiliary switch is turned on and maintained Turn on the auxiliary switch after about a quarter of the resonance period of the circuit state at the moment, and when the coupling current in the transformer winding decays to zero, the auxiliary switch is turned on and maintained at about half of the circuit state at the moment After one resonant period, the auxiliary switch is turned off, and then the main switch is turned on. 6.使用(1)和(2)所描述的电路,既可以实现高效率的直流-直流变换器或不带功率因数调节的交流-直流变换器功能,也可以保持经整流电路整流后的电压为全波正弦脉动波形并通过对主开关的操作控制使得交流输入端的输入电流包络线跟随与输入电源电压同相的正弦波形,从而可以使用这类单级变换电路来实现高效率的带功率因数调节和直流-直流变换的综合变换功能。6. Using the circuits described in (1) and (2), it is possible to realize the function of a high-efficiency DC-DC converter or an AC-DC converter without power factor adjustment, and to maintain the voltage rectified by the rectifier circuit It is a full-wave sinusoidal pulse waveform and through the operation control of the main switch, the input current envelope at the AC input terminal follows the sinusoidal waveform in phase with the input power supply voltage, so that this type of single-stage conversion circuit can be used to achieve high efficiency with power factor Integrated conversion function for regulation and DC-DC conversion. 7.使用(1)和(2)所述电路,既可以把输出电压做为控制目标反馈信号来控制开关管的操作来驱动电压型的负载,也可以把输出电流作为控制目标反馈信号来控制开关管的操作来驱动电流型负载,同时也可以把输出电压和输出电流的乘积做控制目标反馈信号来控制开关管的操作来驱动功率型负载。7. Using the circuits described in (1) and (2), the output voltage can be used as the control target feedback signal to control the operation of the switch tube to drive the voltage type load, and the output current can also be used as the control target feedback signal to control The operation of the switch tube is used to drive the current-type load. At the same time, the product of the output voltage and the output current can be used as the control target feedback signal to control the operation of the switch tube to drive the power-type load. 8.一个同步整流电路,用一个N型MOSFET做为同步整流器件,其源极接至输出地端或负端,漏极接到变压器次级绕组和初级绕组接输入电压正端同相的端口,或用一个P型MOSFET做为同步整流器件,其源极接至正电压输出端口,漏极接至次级绕组和初级绕组接正输入电压端反相的端口,用一个差动电路来控制同步整流管的门极驱动,差动电路的一个输入端从变压器次极绕组两端取得分压信号,另一个输入端从输出电压正负两端间取得分压信号,差动电路的输出信号或经过放大的输出信号用来控制同步整流管的开关操作。8. A synchronous rectification circuit, using an N-type MOSFET as a synchronous rectification device, its source is connected to the output ground or negative terminal, the drain is connected to the transformer secondary winding and the primary winding is connected to the same phase port of the input voltage positive terminal, Or use a P-type MOSFET as a synchronous rectification device, its source is connected to the positive voltage output port, the drain is connected to the secondary winding and the primary winding is connected to the positive input voltage port, and a differential circuit is used to control the synchronization The gate drive of the rectifier tube, one input terminal of the differential circuit obtains the divided voltage signal from both ends of the secondary winding of the transformer, and the other input terminal obtains the divided voltage signal from the positive and negative ends of the output voltage, the output signal of the differential circuit or The amplified output signal is used to control the switching operation of the synchronous rectifiers. 9.在(8)所描述的电路操作中,当变压器次级绕组有电流向输出供电时,差动控制电路的输出使得同步整流管导通,当变压器次级绕组电流为零,或次级绕组电压为反向时,也即趋向于使得同步整流器件的旁路二极管反向偏置时,差动控制电路的输出使得同步整流管截止,阻止输出电容的反向放电。9. In the circuit operation described in (8), when the transformer secondary winding has current to supply power to the output, the output of the differential control circuit makes the synchronous rectifier conduction, when the transformer secondary winding current is zero, or the secondary When the winding voltage is in the reverse direction, that is, when the bypass diode of the synchronous rectification device tends to be reverse-biased, the output of the differential control circuit makes the synchronous rectifier tube cut off, preventing the reverse discharge of the output capacitor.
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CN102957361A (en) * 2011-08-24 2013-03-06 海洋王照明科技股份有限公司 Reversible rotation driving circuit of control motor
CN103780065A (en) * 2014-02-28 2014-05-07 惠州市锦湖实业发展有限公司 Soft turn-off power supply converter
CN103840686A (en) * 2012-11-26 2014-06-04 苏州奥曦特电子科技有限公司 High-efficiency power supply converter with integrated functions of PFC and DC conversion
CN104836561A (en) * 2015-04-14 2015-08-12 汪水仿 Soft turn-off technology with load voltage being adjusted
CN105450055A (en) * 2015-11-20 2016-03-30 芜湖锐芯电子科技有限公司 Current-type synchronous rectification circuit
CN106452049A (en) * 2016-11-28 2017-02-22 深圳市华星光电技术有限公司 Combined circuit and power supply circuit used for combined circuit as well as display device
WO2017128695A1 (en) * 2016-01-29 2017-08-03 深圳嘉润茂电子有限公司 Zero-voltage quasi-resonant boost circuit
CN107040245A (en) * 2017-05-03 2017-08-11 深圳市硕亚科技有限公司 Kiloampere heavy current pulse signal generation device and DIDT test equipments
CN107086791A (en) * 2017-06-09 2017-08-22 黑龙江大学 Dual-circuit, multi-circuit input series interleaved switching power supply device with function of eliminating circulating current
CN107306052A (en) * 2016-04-19 2017-10-31 英飞凌科技股份有限公司 The control of afterflow voltage
CN108631641A (en) * 2018-05-15 2018-10-09 哈尔滨理工大学 Circuit and method for generation occur for the sinusoidal impulse based on FPGA
CN113589005A (en) * 2021-07-27 2021-11-02 捷蒽迪电子科技(上海)有限公司 Voltage detection circuit with blanking time
CN113972847A (en) * 2020-07-24 2022-01-25 茂睿芯(深圳)科技有限公司 AC/DC conversion circuit and power conversion device
CN114006533A (en) * 2021-09-30 2022-02-01 艾科微电子(深圳)有限公司 Switching device with dummy load, primary side control unit and operation method thereof
CN114448262A (en) * 2022-04-11 2022-05-06 深圳美利晶微电子科技有限公司 Switching power supply based on MOS pipe
CN118203215A (en) * 2023-04-13 2024-06-18 王一凯 Magnetic suspension gravity-free seat and manufacturing method thereof

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Publication number Priority date Publication date Assignee Title
CN102957361A (en) * 2011-08-24 2013-03-06 海洋王照明科技股份有限公司 Reversible rotation driving circuit of control motor
CN103840686A (en) * 2012-11-26 2014-06-04 苏州奥曦特电子科技有限公司 High-efficiency power supply converter with integrated functions of PFC and DC conversion
CN103840686B (en) * 2012-11-26 2017-07-11 苏州奥曦特电子科技有限公司 High-efficiency power converter with PFC and direct current conversion complex function
CN103780065A (en) * 2014-02-28 2014-05-07 惠州市锦湖实业发展有限公司 Soft turn-off power supply converter
CN103780065B (en) * 2014-02-28 2016-07-13 惠州市锦湖实业发展有限公司 A soft turn-off power converter
CN104836561A (en) * 2015-04-14 2015-08-12 汪水仿 Soft turn-off technology with load voltage being adjusted
CN105450055A (en) * 2015-11-20 2016-03-30 芜湖锐芯电子科技有限公司 Current-type synchronous rectification circuit
WO2017128695A1 (en) * 2016-01-29 2017-08-03 深圳嘉润茂电子有限公司 Zero-voltage quasi-resonant boost circuit
CN107306052A (en) * 2016-04-19 2017-10-31 英飞凌科技股份有限公司 The control of afterflow voltage
CN106452049A (en) * 2016-11-28 2017-02-22 深圳市华星光电技术有限公司 Combined circuit and power supply circuit used for combined circuit as well as display device
CN107040245B (en) * 2017-05-03 2023-08-22 深圳市硕亚科技有限公司 Kiloamp high-current pulse signal generating device and DIDT test equipment
CN107040245A (en) * 2017-05-03 2017-08-11 深圳市硕亚科技有限公司 Kiloampere heavy current pulse signal generation device and DIDT test equipments
CN107086791A (en) * 2017-06-09 2017-08-22 黑龙江大学 Dual-circuit, multi-circuit input series interleaved switching power supply device with function of eliminating circulating current
CN107086791B (en) * 2017-06-09 2023-09-19 黑龙江大学 Dual-circuit and multi-circuit input series interleaved switching power supply device with circulation current elimination function
CN108631641A (en) * 2018-05-15 2018-10-09 哈尔滨理工大学 Circuit and method for generation occur for the sinusoidal impulse based on FPGA
CN113972847A (en) * 2020-07-24 2022-01-25 茂睿芯(深圳)科技有限公司 AC/DC conversion circuit and power conversion device
CN113589005A (en) * 2021-07-27 2021-11-02 捷蒽迪电子科技(上海)有限公司 Voltage detection circuit with blanking time
CN114006533A (en) * 2021-09-30 2022-02-01 艾科微电子(深圳)有限公司 Switching device with dummy load, primary side control unit and operation method thereof
CN114006533B (en) * 2021-09-30 2022-10-14 艾科微电子(深圳)有限公司 Switching device with dummy load, primary side control unit and operation method thereof
CN114448262A (en) * 2022-04-11 2022-05-06 深圳美利晶微电子科技有限公司 Switching power supply based on MOS pipe
CN118203215A (en) * 2023-04-13 2024-06-18 王一凯 Magnetic suspension gravity-free seat and manufacturing method thereof

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