CN206580883U - A kind of diamond-like carbon film-coating Preparation equipment - Google Patents
A kind of diamond-like carbon film-coating Preparation equipment Download PDFInfo
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Abstract
本实用新型提供一种类金刚石镀膜制备设备,包括:真空腔体、伴热装置、扩散器、流量控制器;其中,所述流量控制器一端设有导入管,另一端设有第一导出管,所述第一导出管与所述扩散器导通;所述扩散器通过第二导出管与所述真空腔体导通,所述伴热装置分别设置于所述第一导出管和所述第二导出管上。通过增加扩散器以及伴热装置,实现类金刚石镀膜制制备过程中液态前驱物的掺杂,从而提高了热稳定性,降低了薄膜的内应力,进一步地,通过设置清洗装置,将基片的清洗环节与类金刚石镀膜制备整合在一起,进一步提高了制备的效率。
The utility model provides a diamond-like coating preparation equipment, comprising: a vacuum cavity, a heat tracing device, a diffuser, and a flow controller; wherein, one end of the flow controller is provided with an inlet pipe, and the other end is provided with a first outlet pipe, The first outlet pipe is connected to the diffuser; the diffuser is connected to the vacuum cavity through the second outlet pipe, and the heat tracing device is respectively arranged on the first outlet pipe and the second outlet pipe. Two outlet tubes. By adding a diffuser and a heat tracing device, the doping of the liquid precursor in the preparation process of the diamond-like coating is realized, thereby improving the thermal stability and reducing the internal stress of the film. Further, by setting the cleaning device, the substrate’s The cleaning link is integrated with the preparation of the diamond-like carbon coating, which further improves the efficiency of the preparation.
Description
技术领域technical field
本实用新型涉及类金刚石镀膜制造技术,尤其涉及一种类金刚石镀膜制备设备。The utility model relates to a diamond-like coating manufacturing technology, in particular to a diamond-like coating preparation equipment.
背景技术Background technique
类金刚石(Diamond-like carbon,简称DLC)镀膜具有高的硬度、高的化学稳定性、高的导热系数、低的摩擦系数、较好的介电性能以及优异的光谱特性,在光学、电学、机械、医学等领域得到了广泛的应用。Diamond-like carbon (DLC) coatings have high hardness, high chemical stability, high thermal conductivity, low friction coefficient, good dielectric properties and excellent spectral characteristics. Machinery, medicine and other fields have been widely used.
现有技术中,多采用等离子增强化学气相沉积技术制备DLC镀膜,该技术具有沉积温度低、绕度性好以及在大面积衬底上沉积的膜层厚度均匀性好的特点,被广泛应用于DLC薄膜的制备。In the prior art, plasma-enhanced chemical vapor deposition technology is mostly used to prepare DLC coatings. This technology has the characteristics of low deposition temperature, good winding, and good uniformity of film thickness deposited on large-area substrates. It is widely used in Preparation of DLC thin films.
但是,采用现有的技术,在实际应用中也存在诸多问题:1)薄膜的内应力大,与基片的而结合力较差,易产生薄膜开裂和剥落;2)较差的热稳定性。However, using the existing technology, there are also many problems in practical applications: 1) the internal stress of the film is large, and the bonding force with the substrate is poor, which is prone to cracking and peeling of the film; 2) poor thermal stability .
实用新型内容Utility model content
本实用新型提供一种类金刚石镀膜制备设备,用于降低类金刚石镀膜的应力并且提高类金刚石镀膜的热稳定性。The utility model provides a diamond-like coating preparation device, which is used for reducing the stress of the diamond-like coating and improving the thermal stability of the diamond-like coating.
本实用新型的第一个方面提供一种类金刚石镀膜制备设备,包括:真空腔体、伴热装置、扩散器、流量控制器和清洗装置;The first aspect of the utility model provides a diamond-like coating preparation equipment, including: a vacuum cavity, a heat tracing device, a diffuser, a flow controller and a cleaning device;
其中,所述流量控制器一端设有导入管,另一端设有第一导出管,所述第一导出管与所述扩散器导通;所述扩散器通过第二导出管与所述真空腔体导通,所述伴热装置分别设置于所述第一导出管和所述第二导出管上;Wherein, one end of the flow controller is provided with an inlet pipe, and the other end is provided with a first outlet pipe, and the first outlet pipe is connected to the diffuser; the diffuser is connected to the vacuum chamber through the second outlet pipe. Body conduction, the heat tracing device is respectively arranged on the first outlet pipe and the second outlet pipe;
所述清洗装置包含清洗腔体、承载盘、清洗喷头以及清洗液存储罐;The cleaning device includes a cleaning chamber, a carrier plate, a cleaning nozzle and a cleaning liquid storage tank;
其中,所述清洗腔体与所述真空腔体通过第一端口密封对接,所述清洗喷头对准所述承载盘,并于所述清洗液存储罐连接;所述承载盘用于承载基片。Wherein, the cleaning chamber and the vacuum chamber are sealed and docked through the first port, and the cleaning nozzle is aligned with the carrier plate and connected to the cleaning liquid storage tank; the carrier plate is used to carry the substrate .
较佳地,所述真空腔体设置有两个圆形电极。Preferably, the vacuum cavity is provided with two circular electrodes.
较佳地,所述扩散器内部设置有:源瓶、热电偶和至少两个辐射发热管;Preferably, the inside of the diffuser is provided with: a source bottle, a thermocouple and at least two radiation heating tubes;
所述至少两个辐射发热管分别于所述热电偶连接。The at least two radiant heating tubes are respectively connected to the thermocouples.
较佳地,所述至少两个辐射发热管分布于所述源瓶的周围。Preferably, the at least two radiant heating tubes are distributed around the source bottle.
较佳地,第一端口与第二端口设置于所述扩散器的第一面,所述第一端口用于与所述第一导出管连接,所述第二端口与所述第二导出管连接。Preferably, a first port and a second port are arranged on the first surface of the diffuser, the first port is used to connect with the first outlet pipe, and the second port is connected to the second outlet pipe connect.
较佳地,所述热电偶设置于所述第一端口和所述第二端口的下端。Preferably, the thermocouple is arranged at the lower end of the first port and the second port.
较佳地,所述伴热装置与所述热电偶连接。Preferably, the heat tracing device is connected to the thermocouple.
较佳地,所述第一导出管设置有第一开关;所述第二导出管设置有第二开关。Preferably, the first outlet pipe is provided with a first switch; the second outlet pipe is provided with a second switch.
较佳地,所述扩散器至少为两个。Preferably, there are at least two diffusers.
较佳地,所述清洗装置还包括:干燥模块;所述干燥模块,包括:干燥气体喷射器和干燥气体存储罐;Preferably, the cleaning device further includes: a drying module; the drying module includes: a dry gas injector and a dry gas storage tank;
其中,干燥气体喷射器对准所述承载盘,并于所述干燥气体存储罐连接。Wherein, the dry gas injector is aimed at the carrier plate and connected to the dry gas storage tank.
本实施例提供的类金刚石镀膜制备设备,通过增加扩散器以及伴热装置,实现类金刚石镀膜制制备过程中液态前驱物的掺杂,从而提高了热稳定性,降低了薄膜的内应力,进一步地,通过设置清洗装置,将基片的清洗环节与类金刚石镀膜制备整合在一起,进一步提高了制备的效率。The diamond-like coating preparation equipment provided in this embodiment realizes the doping of the liquid precursor in the preparation process of the diamond-like coating by adding a diffuser and a heat tracing device, thereby improving the thermal stability and reducing the internal stress of the film, further Specifically, by setting up a cleaning device, the cleaning of the substrate is integrated with the preparation of the diamond-like coating, which further improves the efficiency of the preparation.
附图说明Description of drawings
图1为本实用新型实施例提供的一种类金刚石镀膜制备设备的结构示意图;Fig. 1 is the structural representation of a kind of diamond-like coating preparation equipment provided by the utility model embodiment;
图2为本实用新型实施例提供的另一种类金刚石镀膜制备设备的结构示意图;Fig. 2 is the structural representation of another diamond-like coating preparation equipment provided by the embodiment of the present invention;
图3为本实用新型提供的类金刚石镀膜制备设备的应力测试示意图;Fig. 3 is the stress test schematic diagram of the diamond-like coating preparation equipment provided by the utility model;
图4为本实用新型提供的类金刚石镀膜制备设备的不同温度下样品的拉曼光谱示意图;Fig. 4 is the Raman spectrum schematic diagram of the sample at different temperatures of the diamond-like coating preparation equipment provided by the utility model;
图5为本实用新型提供的类金刚石镀膜制备设备的运载气体流量与硬度的关系示意图;5 is a schematic diagram of the relationship between the carrier gas flow and hardness of the diamond-like coating preparation equipment provided by the present invention;
图6为本实用新型提供的类金刚石镀膜制备设备的不同运载气体流量下的DLC表面粗糙度的示意图;6 is a schematic diagram of the DLC surface roughness under different carrier gas flow rates of the diamond-like coating preparation equipment provided by the present invention;
图7为本实用新型提供的另一种类金刚石镀膜制备设备的结构示意图。Fig. 7 is a schematic structural diagram of another diamond-like coating preparation equipment provided by the present invention.
具体实施方式detailed description
图1为本实用新型实施例提供的一种类金刚石镀膜制备设备的结构示意图,参照图1,该设备包括:真空腔体10、伴热装置11、扩散器12、流量控制器13和清洗装置14;Fig. 1 is a schematic structural diagram of a diamond-like coating preparation equipment provided by an embodiment of the present invention. Referring to Fig. 1, the equipment includes: a vacuum cavity 10, a heat tracing device 11, a diffuser 12, a flow controller 13 and a cleaning device 14 ;
其中,所述流量控制器13一端设有导入管13a,另一端设有第一导出管 13b,所述第一导出管13b与所述扩散器12导通;所述扩散器12通过第二导出管12a与所述真空腔体10导通,所述伴热装置11分别设置于所述第一导出管13b和所述第二导出管12a上。Wherein, one end of the flow controller 13 is provided with an inlet pipe 13a, and the other end is provided with a first outlet pipe 13b, and the first outlet pipe 13b is in communication with the diffuser 12; The pipe 12a communicates with the vacuum cavity 10, and the heat tracing device 11 is respectively arranged on the first outlet pipe 13b and the second outlet pipe 12a.
所述清洗装置包含清洗腔体14-1、承载盘14-2、清洗喷头14-3以及清洗液存储罐14-4;The cleaning device includes a cleaning chamber 14-1, a carrier plate 14-2, a cleaning nozzle 14-3 and a cleaning liquid storage tank 14-4;
其中,所述清洗腔体14-1与所述真空腔体10通过第一端口14-5密封对接,所述清洗喷头14-3对准所述承载盘14-2,并于所述清洗液存储罐14-4连接;所述承载盘14-2用于承载基片。Wherein, the cleaning chamber 14-1 is sealed and docked with the vacuum chamber 10 through the first port 14-5, and the cleaning nozzle 14-3 is aligned with the carrier plate 14-2, and the cleaning liquid The storage tank 14-4 is connected; the carrier tray 14-2 is used to carry the substrate.
具体的,基片在酒精与丙酮构成的清洗液中进行超声波清洗15分钟。Specifically, the substrate is ultrasonically cleaned for 15 minutes in a cleaning solution composed of alcohol and acetone.
本实施例提供的类金刚石镀膜制备设备,通过增加扩散器以及伴热装置,实现类金刚石镀膜制制备过程中液态前驱物的掺杂,从而提高了热稳定性,降低了薄膜的内应力,进一步地,通过设置清洗装置,将基片的清洗环节与类金刚石镀膜制备整合在一起,进一步提高了制备的效率。The diamond-like coating preparation equipment provided in this embodiment realizes the doping of the liquid precursor in the preparation process of the diamond-like coating by adding a diffuser and a heat tracing device, thereby improving the thermal stability and reducing the internal stress of the film, further Specifically, by setting up a cleaning device, the cleaning of the substrate is integrated with the preparation of the diamond-like coating, which further improves the efficiency of the preparation.
具体的,真空腔体10与清洗腔体14-1之间可以设置一滑动轨道,用于连接承载盘14-2,使得该接承载盘14-2可以从清洗腔体14-1中滑动至真空腔体10;再由真空腔体10滑动至清洗腔体14-1。该滑动轨道穿过上述第一端口14-15。Specifically, a sliding track may be provided between the vacuum chamber 10 and the cleaning chamber 14-1 for connecting the carrying tray 14-2 so that the connecting tray 14-2 can slide from the cleaning chamber 14-1 to Vacuum cavity 10; then slide from the vacuum cavity 10 to the cleaning cavity 14-1. The sliding track passes through the above-mentioned first port 14-15.
在图1的基础上,图2为本实用新型实施例提供的另一种类金刚石镀膜制备设备的结构示意图,参照图2,其中,所述真空腔体10设置有两个圆形电极10-1。On the basis of Fig. 1, Fig. 2 is a schematic structural diagram of another diamond-like coating preparation equipment provided by the embodiment of the present invention, referring to Fig. 2, wherein the vacuum cavity 10 is provided with two circular electrodes 10-1 .
所述扩散器12内部设置有:源瓶12-1、热电偶12-2和至少两个辐射发热管12-3;The inside of the diffuser 12 is provided with: a source bottle 12-1, a thermocouple 12-2 and at least two radiation heating tubes 12-3;
具体的,源瓶12-1装液态反应物,而热电偶12-2与源瓶12-1表面接触。Specifically, the source bottle 12-1 is filled with a liquid reactant, and the thermocouple 12-2 is in contact with the surface of the source bottle 12-1.
所述至少两个辐射发热管12-3分别于所述热电偶12-2连接。The at least two radiant heating tubes 12-3 are respectively connected to the thermocouples 12-2.
具体的,热电偶12-2获取源瓶12-1的温度数据,本实施例还可以包括处理器,用于根据热电偶12-2获得的温度数据控制所述至少两个辐射发热管12- 3的加热温度。Specifically, the thermocouple 12-2 obtains the temperature data of the source bottle 12-1, and this embodiment may further include a processor for controlling the at least two radiation heating tubes 12-1 according to the temperature data obtained by the thermocouple 12-2. 3 heating temperature.
所述至少两个辐射发热管12-3分布于所述源瓶12-1的周围。The at least two radiant heating tubes 12-3 are distributed around the source bottle 12-1.
第一端口与第二端口设置于所述扩散器的第一面,所述第一端口用于与所述第一导出管连接,所述第二端口与所述第二导出管连接。A first port and a second port are arranged on the first surface of the diffuser, the first port is used for connecting with the first outlet pipe, and the second port is connected with the second outlet pipe.
所述热电偶设置于所述第一端口和所述第二端口的下端。The thermocouple is arranged at the lower end of the first port and the second port.
所述伴热装置11与所述热电偶12-2连接。The heat tracing device 11 is connected to the thermocouple 12-2.
具体的,源瓶12-1与12-3之间设置有热电偶12-2。另外,在所述第一导出管13b与伴热装置11之间也可以设置热电偶,用于获取第一导出管13b的温度数据;第二导出管12a与伴热装置11之间也可以设置热电偶,用于获取第二导出管12a的温度数据;Specifically, a thermocouple 12-2 is arranged between the source bottles 12-1 and 12-3. In addition, a thermocouple can also be set between the first lead-out pipe 13b and the heat tracing device 11 to obtain the temperature data of the first lead-out pipe 13b; Thermocouples, used to obtain the temperature data of the second outlet pipe 12a;
具体的,伴热装置11绕在管路周围,用于为所述第一导出管13b和所述第二导出管12a加温,通常热电偶12-2用来探测所述第一导出管13b和所述第二导出管12a的温度。Specifically, the heat tracing device 11 is wound around the pipeline for heating the first outlet pipe 13b and the second outlet pipe 12a, and a thermocouple 12-2 is usually used to detect the first outlet pipe 13b and the temperature of the second outlet pipe 12a.
所述第一导出管设置有第一开关a;所述第二导出管设置有第二开关b。The first outlet pipe is provided with a first switch a; the second outlet pipe is provided with a second switch b.
所述扩散器12至少为两个。There are at least two diffusers 12 .
进一步地,该设备配备RF源、真空系统、气体控制系统以及尾气处理系统。其中RF源的频率为13.56MHz,气体控制系统配备8个流量控制器(MFC)。对于该设备,反应物或反应前驱物通常都是气体,而对于硅掺杂而言,正常条件下应该选择气态前驱物硅烷,更容易实现掺杂反应,可是硅烷在常温下易燃、易爆,人为很难控制。所以选择液态的前驱物四甲基硅烷(TMS),但利用气体控制系统很难实现液态物质进入真空室参与反应。为了实现液态前驱物的掺杂,本实施例增加了至少两个扩散器,扩散器的内部和外部配有温度控制系统,具体的该温度控制系统由上文热电偶、至少两个辐射发热管以及伴热装置构成,加入的两个扩散器与MFC相连,这样就可以利用运载气体将热后的反应前驱物带入真空室内参与掺杂反应。示例以氩气(Ar)为运载气体、正丁烷(C4H10)为反应气体、四甲基硅烷(TMS)为反应前驱物。Si 基片在酒精与丙酮的混合液中进行超声波清洗15分钟,并用氮气吹干后放入真空室。Further, the equipment is equipped with RF source, vacuum system, gas control system and tail gas treatment system. The frequency of the RF source is 13.56MHz, and the gas control system is equipped with 8 flow controllers (MFC). For this device, the reactants or reaction precursors are usually gases, and for silicon doping, the gaseous precursor silane should be selected under normal conditions, which is easier to achieve the doping reaction, but silane is flammable and explosive at room temperature , artificially difficult to control. Therefore, the liquid precursor tetramethylsilane (TMS) is selected, but it is difficult to realize the liquid substance entering the vacuum chamber to participate in the reaction by using the gas control system. In order to achieve the doping of liquid precursors, this embodiment adds at least two diffusers, and the inside and outside of the diffuser are equipped with a temperature control system. Specifically, the temperature control system consists of the above thermocouple, at least two radiation heating tubes As well as the heat tracing device, the two added diffusers are connected to the MFC, so that the carrier gas can be used to bring the heated reaction precursor into the vacuum chamber to participate in the doping reaction. The example uses argon (Ar) as the carrier gas, n-butane (C4H10) as the reaction gas, and tetramethylsilane (TMS) as the reaction precursor. The Si substrate was ultrasonically cleaned in a mixture of alcohol and acetone for 15 minutes, dried with nitrogen and placed in a vacuum chamber.
图3为本实用新型提供的类金刚石镀膜制备设备的应力测试示意图,应力的测试结果如图3所示,从图中可以看出,随着运载气体的流量的增加,膜层的应力在减小。这是因为随着运载气体流量的增加,参与反应的TMS的含量增加,使得膜层中Si的含量增加,掺杂的Si原子取代了C原子进入到 DLC薄膜的晶格中,由于硅原子的半径较大而电负性较小,所以不易生成sp2 键,而是与C结合成sp3键。因此在DLC中掺杂Si可以增加DLC薄膜中 SP3键的含量,从而提高DLC薄膜中sp3/sp2的比例。但C-Si(3.12ev)键能小于C-C(3.61ev)的键能,因此DLC薄膜掺Si后周围的碳键畸变得到松弛,从而减小了DLC薄膜的内应力。另外,Si掺杂DLC薄膜中,由于Si以 sp3结构存在,因此当Si进入膜层,使膜层中的自由氢含量降低,从而降低了膜层的内应力。Fig. 3 is the stress test schematic diagram of the diamond-like coating preparation equipment that the utility model provides, and the test result of stress is as shown in Fig. 3, can find out from the figure, along with the increase of the flow rate of carrier gas, the stress of film layer is decreasing small. This is because as the flow rate of the carrier gas increases, the content of TMS participating in the reaction increases, so that the content of Si in the film layer increases, and the doped Si atoms replace the C atoms and enter the lattice of the DLC film. The radius is large and the electronegativity is small, so it is not easy to generate sp2 bonds, but combines with C to form sp3 bonds. Therefore, doping Si in DLC can increase the content of SP3 bonds in DLC films, thereby increasing the ratio of sp3/sp2 in DLC films. However, the bond energy of C-Si (3.12ev) is less than that of C-C (3.61ev), so the surrounding carbon bond distortion of the DLC film becomes relaxed after Si doping, thereby reducing the internal stress of the DLC film. In addition, in the Si-doped DLC thin film, since Si exists in sp3 structure, when Si enters the film layer, the free hydrogen content in the film layer is reduced, thereby reducing the internal stress of the film layer.
本实验对Si掺杂DLC薄膜的热稳定性的测试使用如下的方法,将制备的样品进行高温退火处理,将处理后的的样品进行Raman光谱测试,通过光谱曲线的变化,可获得膜层的热稳定性。图3中给出了运载气体流量为5sccm 条件下,样品进行不同温度退火处理后的Raman光谱,其余运载气体流量下的石墨化温度范围如表1所示。This experiment uses the following method to test the thermal stability of Si-doped DLC thin films. The prepared samples are subjected to high-temperature annealing treatment, and the processed samples are subjected to Raman spectrum testing. Through the changes in the spectral curves, the thickness of the film layer can be obtained. thermal stability. Figure 3 shows the Raman spectra of the samples after annealing at different temperatures under the condition of a carrier gas flow rate of 5 sccm, and the graphitization temperature ranges under other carrier gas flow rates are shown in Table 1.
表1-不同运载气体流量下的样品石墨化温度Table 1 - Sample graphitization temperature at different carrier gas flow rates
图4为本实用新型提供的类金刚石镀膜制备设备的不同温度下样品的拉曼光谱示意图,从图4中可以看出,对于运载气体流量为5sccm条件下生成的DLC膜,当温度达到400~450℃之间时,薄膜开始石墨化。温度进一步升高时,膜层石墨化加剧;其余石墨化温度范围如表1所示。对于运载气体流量为30sccm条件下生成的DLC薄膜,石墨化温度达到600℃以上。表明随着膜层中掺杂Si的含量的增加,DLC薄膜石墨化温度提高,表明膜层的热稳定性提高了。这是因为Si的存在增大了膜层内sp3键的稳定性,提高了非晶碳基薄膜的无序状态,增加了亚稳态的势垒,因此需要更高的能量才能翻越势垒形成稳定态的石墨结构,所以需要高的温度才能石墨化。另外膜层中的Si的含量越多,膜层中的自由氢的含量越低,因此,膜层中解析释放出氢更困难,使得石墨化需要的能量进一步提高。所以膜层中Si含量越高,薄膜的热稳定性越高。Fig. 4 is the Raman spectrum schematic diagram of the sample under the different temperatures of the diamond-like coating preparation equipment that the utility model provides, as can be seen from Fig. 4, for the DLC film that generates under the condition of 5 sccm for the carrier gas flow rate, when the temperature reaches 400~ Between 450°C, the film begins to graphitize. When the temperature is further increased, the graphitization of the film layer is intensified; the remaining graphitization temperature ranges are shown in Table 1. For the DLC film formed under the condition of carrier gas flow rate of 30 sccm, the graphitization temperature reaches above 600°C. It shows that with the increase of doped Si content in the film layer, the graphitization temperature of DLC film increases, indicating that the thermal stability of the film layer is improved. This is because the presence of Si increases the stability of the sp3 bond in the film layer, improves the disordered state of the amorphous carbon-based film, and increases the potential barrier of the metastable state, so higher energy is required to cross the barrier to form The stable graphite structure requires a high temperature to graphitize. In addition, the more Si content in the film layer, the lower the free hydrogen content in the film layer. Therefore, it is more difficult to resolve and release hydrogen in the film layer, which further increases the energy required for graphitization. Therefore, the higher the Si content in the film layer, the higher the thermal stability of the film.
图5为本实用新型提供的类金刚石镀膜制备设备的运载气体流量与硬度的关系示意图,硬度测试结果如图5所示,由图5可知随着运载气体流量的增加,膜层的硬度降低。由图5可知,运载气体流量在0-5sccm时,膜层的硬度下降较慢,而在5-25sccm之间变化时,硬度的下降速度很快,在25-30sccm 之间变化时硬度下降又变得较慢。由于硅原子与C结合成sp3键,增加了DLC 薄膜中sp3键的含量,从而提高DLC薄膜中sp3/sp2的比例。但C-Si键能小于C-C的键能,所以薄膜的硬度降低。运载气体流量在0-5sccm时,掺杂的反应物较少,形成的C-Si的含量较少,因此膜层的硬度下降较慢,而在5- 25sccm之间变化时,随着掺杂气体的增加,膜层中C-Si的含量很快地增加,所以硬度的下降速度很快,而在25-30sccm之间变化时,由于掺杂气体的含量较高,可能部分掺杂气体被真空泵带走,硬度下降又变得较慢。Fig. 5 is a schematic diagram of the relationship between the carrier gas flow rate and the hardness of the diamond-like coating preparation equipment provided by the present invention. The hardness test results are shown in Fig. 5, and it can be seen from Fig. 5 that as the carrier gas flow rate increases, the hardness of the film layer decreases. It can be seen from Figure 5 that when the carrier gas flow rate is 0-5 sccm, the hardness of the film layer decreases slowly, and when it changes between 5-25 sccm, the hardness decreases rapidly, and when it changes between 25-30 sccm, the hardness decreases again. become slower. Since silicon atoms combine with C to form sp3 bonds, the content of sp3 bonds in the DLC film is increased, thereby increasing the ratio of sp3/sp2 in the DLC film. But the bond energy of C-Si is smaller than that of C-C, so the hardness of the film decreases. When the carrier gas flow rate is 0-5 sccm, the doped reactants are less, and the content of C-Si formed is less, so the hardness of the film layer decreases slowly, and when it changes between 5-25 sccm, with the doping With the increase of gas, the content of C-Si in the film layer increases rapidly, so the hardness decreases rapidly, and when it changes between 25-30sccm, due to the high content of doping gas, part of the doping gas may be The vacuum pump is taken away, and the hardness drop becomes slower again.
图6为本实用新型提供的类金刚石镀膜制备设备的不同运载气体流量下的DLC表面粗糙度的示意图,参照图6,为确定Si的掺杂量对于样品表面形貌的影响,对样品进行AFM测试,由图5结果可知:随着膜层中Si含量的增加,膜层的表面粗糙度逐渐降低。这是由于Si的掺杂,导致DLC薄膜内的sp3与sp2键的比例产生了很大的变化,Si的存在大大限制了sp2键结构的形成,从而抑制了sp2石墨团簇的快速生长,提高了膜层的表面光洁度。Figure 6 is a schematic diagram of the DLC surface roughness under different carrier gas flow rates of the diamond-like coating preparation equipment provided by the utility model, with reference to Figure 6, in order to determine the influence of the doping amount of Si on the surface morphology of the sample, AFM is carried out on the sample According to the test results in Figure 5, it can be seen that as the Si content in the film layer increases, the surface roughness of the film layer decreases gradually. This is due to the doping of Si, which leads to a great change in the ratio of sp3 and sp2 bonds in the DLC film. The existence of Si greatly limits the formation of sp2 bond structure, thereby inhibiting the rapid growth of sp2 graphite clusters and improving the surface finish of the film.
进一步地,在图1的基础上,图7为本实用新型提供的另一种类金刚石镀膜制备设备的结构示意图,参照图7,该金刚石镀膜制备设备还包括:所述干燥模块,具体的,所述干燥模块包括:干燥气体喷射器14-6和干燥气体存储罐14-7;Further, on the basis of FIG. 1, FIG. 7 is a schematic structural diagram of another diamond-like coating preparation equipment provided by the present invention. Referring to FIG. 7, the diamond coating preparation equipment also includes: the drying module, specifically, the The drying module includes: a dry gas injector 14-6 and a dry gas storage tank 14-7;
具体的,干燥气体喷射器14-6对准所述承载盘14-2,并于所述干燥气体存储罐14-7连接。Specifically, the dry gas injector 14-6 is aimed at the carrier plate 14-2, and is connected to the dry gas storage tank 14-7.
其中,干燥气体可以为氮气,用氮气对承载于承载盘14-2的基片进行吹干,之后将基片设置与真空腔体10中。Wherein, the drying gas may be nitrogen, and nitrogen is used to dry the substrate carried on the carrier plate 14 - 2 , and then the substrate is placed in the vacuum chamber 10 .
优选地,该干燥模块还可以包含干燥气体收集装置或真空泵,用于将干燥气体进行收集或者,通过真空泵将干燥气体抽走。Preferably, the drying module may also include a drying gas collecting device or a vacuum pump, for collecting the drying gas or sucking the drying gas away through the vacuum pump.
可选的,为了实现第一端口14-5的密封功能,一种可能的实现方式:在第一端口14-5设置密封隔板15,当密封隔板15处于关闭状态时,实现第一端口14-5的密封;当密封隔板15处于打开状态时,则进行承载盘14-2的移动。Optionally, in order to realize the sealing function of the first port 14-5, a possible implementation method: a sealing partition 15 is provided at the first port 14-5, and when the sealing partition 15 is in a closed state, the first port is realized 14-5 sealing; when the sealing partition 15 is in an open state, then carry out the movement of the carrying tray 14-2.
最后应说明的是:以上各实施例仅用以说明本实用新型的技术方案,而非对其限制;尽管参照前述各实施例对本实用新型进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本实用新型各实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present utility model, and are not intended to limit it; although the present utility model has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand : It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements to some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions depart from the various embodiments of the present invention Scope of technical solutions.
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