CN205881925U - Photovoltaic module of optics high -usage - Google Patents
Photovoltaic module of optics high -usage Download PDFInfo
- Publication number
- CN205881925U CN205881925U CN201620877169.XU CN201620877169U CN205881925U CN 205881925 U CN205881925 U CN 205881925U CN 201620877169 U CN201620877169 U CN 201620877169U CN 205881925 U CN205881925 U CN 205881925U
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- China
- Prior art keywords
- photovoltaic module
- eva layer
- utilization rate
- total reflection
- optics utilization
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a photovoltaic module of optics high -usage, the high light transmission rate coated glass, the last floor height that set gradually including top -down pass through EVA layer, crystal silicon battery piece array, descend the floor height to pass through EVA layer and total reflection backplate, printing full reflection configuration aluminium foil in total reflection backplate surface perhaps is provided with unsmooth reflecting structure. This photovoltaic module can use the photovoltaic module under different service environment to can improve the conversion efficiency of subassembly greatly, at same battery gear, can improve the conversion efficiency of subassembly 3%, greatly increased electric station side unit area generated energy.
Description
[technical field]
This utility model belongs to solar energy crystal silicon battery component technology field, is specifically related to a kind of high optics utilization rate photovoltaic
Assembly.
[background technology]
The emerging energy that solar energy is a kind of renewable, cleanliness without any pollution, do not limited by resource advantage, the most gradually,
By the most extensively application.Solar photovoltaic assembly is the core component in solar power system, it is possible to use photoproduction lies prostrate
Special principle is by solar energy converting electrical energy, and the conversion efficiency of solar components is the highest, and the generated energy in unit are is the biggest.City at present
On field, 60 156 × 156mm crystal silicon battery solar components of main flow are mainly new by 3.2mm 4mm ordinary glass, upper strata
Type EVA, battery, lower layer high-barrier EVA, backboard, rosette, the aluminum alloy frame etc. of more than B-section 40mm form, due to photovoltaic
The important development direction of assembly is for improving its transformation efficiency, and optical optimization is always for optimizing the important directions improved, and this patent leads to
Cross the largest optimization to photovoltaic module optics utilization rate, propose a kind of important method improving assembly transformation efficiency.
[utility model content]
Technical problem to be solved in the utility model is to provide the photovoltaic module that a kind of optics utilization rate is high, this photovoltaic group
Part can use and use the photovoltaic module under environment in difference, and can be greatly improved the conversion efficiency of assembly, at same electricity
Pond gear, can improve the conversion efficiency of assembly 3%, considerably increases power station end unit are generated energy.
Above-mentioned technical problem of the present utility model is achieved by the following technical solution:
The photovoltaic module that a kind of optics utilization rate is high, including the coated glass set gradually from top to bottom, upper strata EVA layer,
Crystal silicon battery chip arrays, lower floor's EVA layer and total reflection backboard；Total reflection back plate surface printing total reflection structure aluminium foil or setting
There is concavo-convex reflective structure.
Upper strata EVA layer and lower floor's EVA layer are ultraviolet cut-on EVA.
After upper strata EVA layer and lower floor's EVA layer are cross-linked by lamination, light transmittance is 92%.
Described concavo-convex reflective structure is in single crystal battery chip arrays below gap between adjacent cell string.
Described coated glass is ultrawhite safety glass, light transmittance 94～94.5%.
The described cell piece in crystal silicon battery chip arrays is PERC cell piece, and adjacent two cell pieces are connected by welding
Connect.
Compared with prior art, this utility model has the advantages that
Compared with the general components on market, this utility model use light transmittance coated glass, the saturating EVA layer of upper floor height,
The optics utilization rate of the assembly that crystal silicon battery chip arrays, the saturating EVA layer of lower floor height, total reflection backboard the most effectively improve, especially
Light secondary can be utilized by total reflection backboard, and conversion efficiency is far above the most common photovoltaic module, this photovoltaic module
Can use and use the photovoltaic module under environment in difference, and the conversion efficiency of assembly can be greatly improved, at same battery
Gear, can improve the conversion efficiency of assembly 3%, considerably increases power station end unit are generated energy.
Further, concavo-convex reflective structure below gap between adjacent cell string, is not required in single crystal battery chip arrays
The backboard wanting monoblock is respectively provided with concavo-convex reflective structure, cost-effective while well make use of light source, it is provided that optics utilizes
Rate.
[accompanying drawing explanation]
Fig. 1 is the sectional schematic diagram of this utility model height optics utilization rate photovoltaic module；
Fig. 2 is total reflection back board structure schematic diagram；
Fig. 3 is total reflection backboard reflective mechanism figure.
Wherein, 1, coated glass；2, upper strata EVA；3, single crystal photovoltaic array；4, lower floor EVA；5, total reflection backboard；
6, concavo-convex reflective structure.
[detailed description of the invention]
The utility model discloses a kind of high optics utilization rate photovoltaic module, in the premise ensureing that assembly can normally use
Under, the conversion efficiency of maximized raising assembly.
Below in conjunction with the accompanying drawings this utility model is described further:
As it is shown in figure 1, the photovoltaic module that this utility model provides, by high transmission rate coated glass 1, the saturating EVA layer of upper floor height
2, crystal silicon battery chip arrays 3, the saturating EVA layer of lower floor height 4 and total reflection backboard 5 form.
Wherein, high transmission rate coated glass 1 uses film liquid to make, on the premise of the mechanical ability of guarantee own, effectively
Improve its light transmittance so that it is the incidence of maximized increase light, light transmittance 94～94.5%.The saturating EVA layer of upper floor height 2 and lower floor
High novel ultraviolet cut-on EVA that is of EVA layer 4 two-layer thoroughly, the high EVA thoroughly of two-layer modification has higher light transmittance, thoroughly after cross-linking
Light rate 92%, can increase the transmitance of ultraviolet light outside visible light wave range.
As it is shown in figure 1, the single crystal battery sheet in crystal silicon battery chip arrays 3 is PERC cell piece.Described single crystal battery sheet battle array
Adjacent two single crystal battery sheets in row (3) are connected by welding.
The total reflection backboard 5 that this utility model provides, total reflection backboard 5 is the portion that in whole assembly, optical gain is most
Point, it is to be formed by the total reflection structure aluminium foil of surface special handling, can be by the light total reflection on backboard to battery.Or
Person, as in figure 2 it is shown, total reflection back plate surface is provided with concavo-convex reflective structure 6, concavo-convex reflective structure 6 is positioned at single crystal battery sheet battle array
In row 3 below gap between adjacent cell string.Total reflection backboard 5 can be by the backboard of the concavo-convex reflective structure of special surface 6
The light total reflection of adjacent cell sheet string spacing to lower glass surface and is reflected back on cell piece.
As it is shown on figure 3, the reflective mechanism of total reflection backboard 5: when light incidence total reflection backboard 5 i.e. can be by concavo-convex reflective
Light secondary is utilized by structure 6, reflexes to battery upper surface, plays sunken photo effect, improves the power output of assembly.Or by battery
The light total reflection of sheet string spacing to lower glass surface and is reflected back on cell piece.
This product is possible not only to be arranged in conventional power plant, it is also possible to be arranged on the higher commercial roof of power consumption, Factory Building
In the project such as roof, Roof of the house, the photovoltaic module that optics utilization rate is high adds the big model of solar components to greatest extent
Enclose application.
The above, be only preferred embodiment of the present utility model, not impose any restrictions this utility model, every
Any simple modification, change and equivalent structure change above example made according to this utility model technical spirit, the most still
Belong in the protection domain of technical solutions of the utility model.
Claims (6)
1. the photovoltaic module that an optics utilization rate is high, it is characterised in that: include the coated glass set gradually from top to bottom
(1), upper strata EVA layer (2), crystal silicon battery chip arrays (3), lower floor's EVA layer (4) and total reflection backboard (5)；Total reflection backboard (5)
Surface printing is totally reflected structure aluminium foil or is provided with concavo-convex reflective structure (6).
The photovoltaic module that optics utilization rate the most according to claim 1 is high, it is characterised in that: upper strata EVA layer (2) and lower floor
EVA layer (4) is ultraviolet cut-on EVA.
The photovoltaic module that optics utilization rate the most according to claim 1 and 2 is high, it is characterised in that: upper strata EVA layer (2) and
After lower floor's EVA layer (4) is cross-linked by lamination, light transmittance is 92%.
The photovoltaic module that optics utilization rate the most according to claim 1 is high, it is characterised in that: described concavo-convex reflective structure
(6) below the gap being positioned in single crystal battery chip arrays (3) between adjacent cell string.
The photovoltaic module that optics utilization rate the most according to claim 1 is high, it is characterised in that: described coated glass (1)
For ultrawhite safety glass, light transmittance 94～94.5%.
The photovoltaic module that optics utilization rate the most according to claim 1 is high, it is characterised in that: described crystal-silicon battery slice battle array
Cell piece in row (3) is PERC cell piece, and adjacent two cell pieces are connected by welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620877169.XU CN205881925U (en) | 2016-08-12 | 2016-08-12 | Photovoltaic module of optics high -usage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620877169.XU CN205881925U (en) | 2016-08-12 | 2016-08-12 | Photovoltaic module of optics high -usage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205881925U true CN205881925U (en) | 2017-01-11 |
Family
ID=57704324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620877169.XU Active CN205881925U (en) | 2016-08-12 | 2016-08-12 | Photovoltaic module of optics high -usage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205881925U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461561A (en) * | 2018-04-02 | 2018-08-28 | 格润智能光伏南通有限公司 | A kind of photovoltaic module of high-photoelectric transformation efficiency |
| CN108735854A (en) * | 2017-04-13 | 2018-11-02 | 苏州阿特斯阳光能源科技有限公司 | The characterizing method of photovoltaic module welding strip internal reflection optics utilization rate |
-
2016
- 2016-08-12 CN CN201620877169.XU patent/CN205881925U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108735854A (en) * | 2017-04-13 | 2018-11-02 | 苏州阿特斯阳光能源科技有限公司 | The characterizing method of photovoltaic module welding strip internal reflection optics utilization rate |
| CN108735854B (en) * | 2017-04-13 | 2020-11-20 | 苏州阿特斯阳光能源科技有限公司 | A Characterization Method for Optical Utilization of Internal Reflection of Photovoltaic Module Welding Ribbon |
| CN108461561A (en) * | 2018-04-02 | 2018-08-28 | 格润智能光伏南通有限公司 | A kind of photovoltaic module of high-photoelectric transformation efficiency |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 710018 Shaanxi city of Xi'an Province Economic and Technological Development Zone is Jilu No. 8989 A block 6 layer Patentee after: Long base music Photovoltaic Technology Co., Ltd. Address before: 710199 No. 388, middle route, Xi'an, Shaanxi, Changan District Patentee before: LERRI SOLAR TECHNOLOGY CO., LTD. |