CN205881867U - High -efficient heavy microwave device of downfield high power frequently - Google Patents
High -efficient heavy microwave device of downfield high power frequently Download PDFInfo
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- CN205881867U CN205881867U CN201620687078.XU CN201620687078U CN205881867U CN 205881867 U CN205881867 U CN 205881867U CN 201620687078 U CN201620687078 U CN 201620687078U CN 205881867 U CN205881867 U CN 205881867U
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Abstract
The utility model discloses a high -efficient heavy microwave device of downfield high power frequently, it includes positive pole, negative pole, guide magnetic field generator, slow wave structure and coaxial inner conductor, the positive pole inside be provided with the launch site and restraint ripples interaction with the district, the negative pole setting in the launch site, slow wave structure and coaxial inner conductor all set up and restraint ripples interaction in with the district at the anodal, the negative pole coaxial with coaxial inner conductor, slow wave structure and anodal are inboard fixed and set up in the periphery of coaxial inner conductor, a high -efficient heavy microwave device of downfield high power frequently inside evacuation formation vacuum cavity, the vacuum of vacuum cavity is no longer than 10 milli handkerchiefs. Launch site and restraint ripples interaction and be provided with the baffle between with the district is provided with the high current electron beam who is used for guiding the negative pole to produce and gets into and restraint ripples interaction with the filling opening in district on the baffle, the filling opening be annular, and annular diameter and negative pole diameter are unanimously. The utility model has the characteristics of can heavyly frequently produce C wave band high power microwave, it is high to restraint ripples conversion efficiency.
Description
Technical field
This utility model relates to high-power pulsed ion beams technical field, is specifically related to a kind of efficiently repetition downfield high power
Microwave device.
Background technology
High-Power Microwave refer to frequency in 1～300GHz scope and peak power at the electromagnetic wave of more than 100MW, C-band
Frequency from 4.0～8.0GHz one section of frequency band.Along with Pulse Power Techniques and the development of plasma physics, High-Power Microwave
Technology also develops by leaps and bounds, and especially achieves progress greatly in terms of the development of high-power microwave source, successively occurs
Wide variety of different types of high-power microwave sources.
High-peak power, high bundle ripple conversion efficiency and repetition transmitting etc. are that current high-power pulsed ion beams is practical is musted
The function that must realize.In the device that existing High-Power Microwave is all types of, Virtual Cathode Oscillators and transit-time oscillator are profits
Guiding electron beam to conduct with wire netting, repetition runs lower wire netting and is easy to be punctured by strong current electron beam.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, it is provided that a kind of be not provided with wire netting, Shu Bozhuan
Change efficiency high and can repetition produce C-band efficient repetition downfield high-power pulsed ion beams.
The purpose of this utility model is achieved through the following technical solutions: a kind of efficiently repetition downfield high power is micro-
Wave device, it includes that anode, negative electrode, guiding magnetic field generator, slow-wave structure and coaxial inner conductor, described anode interior are arranged
Having launch site and bundle ripple interaction region, described negative electrode is arranged in launch site, and described slow-wave structure and coaxial inner conductor are equal
Being arranged in the bundle ripple interaction region of anode, described negative electrode is coaxial with coaxial inner conductor, and slow-wave structure is solid with the inner side of anode
Determining and be arranged on the periphery of coaxial inner conductor, the internal evacuation of efficient repetition downfield high-power pulsed ion beams forms a vacuum
Chamber, the vacuum of described vacuum chamber is less than 10 millipascal.
It is preferred that, described efficient repetition downfield high-power pulsed ion beams by producing pulse voltage 700kV, merit
The driver drives of rate 10GW.
It is preferred that, described guiding magnetic field generator is arranged on outside launch site.
It is preferred that, described guiding magnetic field generator is permanent magnet or alive solenoid coil, described
The anode forming launch site be cylindric, guiding magnetic field generator is looped around the periphery of cylindrical anode.Use permanent magnet skill
Art, can the direct jettisoning magnetic field demand to the energy；The solenoid coil using energising is easy to regulate magnetic field intensity.
It is preferred that, described guides the magnetic field intensity in magnetic field less than 0.5T.It is highly preferred that it is of the present utility model
Guiding magnetic field is axial magnetic field, and the magnetic field intensity in its magnetic field is 0.2T, low in axial magnetic field of strong current electron beam that negative electrode produces
Entering bundle ripple interaction region (also referred to as " bundle ripple interaction chamber ") under introduction by magnetic field, in bundle ripple interaction region, strong current electron beam relies on
Electron inertia and electromagnetic force are axially transmitted, and produce High-Power Microwave.Low guiding magnetic field can be greatly lowered high-power microwave source
The volume of system (device), weight.
It is preferred that, described cathode end is provided with an annular protuberance.
It is preferred that, it is provided with baffle plate, the one of described baffle plate between described launch site and bundle ripple interaction region
End is connected with anode inner side, and the other end of baffle plate is fixed on coaxial inner conductor；It is provided with for guiding the moon on described baffle plate
The strong current electron beam that pole produces enters the inlet of bundle ripple interaction region, and inlet is annular, the diameter of annular and cathode diameter
Unanimously, the width of looping pit (ring-shaped pouring entrance) is 8mm～20mm.At the anode end face near negative electrode with one and cathode diameter one
The looping pit (ring-shaped pouring entrance) caused guides strong current electron beam to enter bundle ripple interaction region (bundle ripple interaction chamber), this electron beam
The narrow annular hole of transmission channel makes to restraint ripple interaction and forms surely that resonator cavity is (therefore, it is possible to " inlet " is referred to as " resonance
Chamber electron-beam entrance "), microwave cannot be introduced into cathode chamber (i.e. launch site).
It is preferred that, described slow-wave structure number is 5, and 5 slow-wave structures are equidistant, and 5 slow-wave structures set
Put at coaxial inner conductor peripheral near one end of negative electrode.
It is preferred that, 5 described slow-wave structures are respectively the first slow-wave structure, the second slow-wave structure, the 3rd slow
Wave structure, the 4th slow-wave structure and the 5th slow-wave structure, wherein the first slow-wave structure, the second slow-wave structure and the 3rd slow-wave structure
Constitute first three slow-wave structure；Between each slow-wave structure, apart 15.7mm(i.e. slow-wave structure Cycle Length is 15.7mm), its
In the external diameter of first three slow-wave structure be 200mm, the internal diameter of first three slow-wave structure is 171mm, the 4th slow-wave structure
External diameter is 200mm, and internal diameter is 174mm, and the external diameter of the 5th slow-wave structure is 200mm, and internal diameter is 178mm；Described anode beam ripple
The internal diameter of interaction region is 200mm, and described anode launch site external diameter is 220mm～250mm.
It is preferred that, described slow-wave structure is the disk-loaded waveguide with centre bore.
The beneficial effects of the utility model are: this utility model has and repetition can produce C-band, and bundle ripple conversion efficiency is high
Feature.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model；
In figure, 1-negative electrode, 2-guides magnetic field generator, 3-inlet, first three slow-wave structure of 4-, and 5-the 4th slow wave is tied
Structure, 6-the 5th slow-wave structure, 7-coaxial inner conductor.
Detailed description of the invention
The technical solution of the utility model is described in further detail below in conjunction with the accompanying drawings, but protection domain of the present utility model
It is not limited to the following stated.
As it is shown in figure 1, a kind of efficiently repetition downfield high-power pulsed ion beams, it includes anode, negative electrode 1, guides magnetic field
Generator 2, slow-wave structure and coaxial inner conductor 7, described anode interior is provided with launch site and bundle ripple interaction region, and bundle ripple is mutual
Active region is a coaxial configuration, and microwave is coaxial waveguide output.Described negative electrode 1 is arranged in launch site, and described is slow
Wave structure and coaxial inner conductor 7 are arranged in the bundle ripple interaction region of anode, the coaxial inner conductor 7 in bundle ripple interaction region
Effect is to increase bundle ripple conversion efficiency so that produce microwave mode controlled, beneficially microwave output.Described negative electrode 1 is interior with coaxial
Conductor 7 is coaxial, and the periphery of coaxial inner conductor 7 is fixed and be arranged in the inner side of slow-wave structure and anode, and efficient repetition downfield is high
Power microwave device inside evacuation forms a vacuum chamber, and the vacuum of described vacuum chamber is less than 10 millipascal.
Preferably, described efficient repetition downfield high-power pulsed ion beams by producing pulse voltage 700kV or 580kV,
The driver drives of power 10GW, repetition can produce C-band High-Power Microwave.
Preferably, described guiding magnetic field generator 2 is arranged on outside launch site.
Preferably, described guiding magnetic field generator 2 is permanent magnet or alive solenoid coil, described formation
The anode of launch site is cylindric, guides magnetic field generator 2 to be looped around the periphery of cylindrical anode.
Preferably, the described magnetic field intensity guiding magnetic field is less than 0.5T.Low guiding magnetic field technique can be greatly lowered
The volume and weight of High-Power Microwave origin system (device).It is further preferred that the magnetic field intensity guiding magnetic field is 0.2T, guide
The effect in magnetic field is to guide the constraint of repetition strong current electron beam to transmit to looping pit (i.e. inlet 3).
Preferably, described negative electrode 1 end is provided with an annular protuberance.Annular protuberance produces under high voltage drive
Strong current electron beam, internal diameter and the external diameter of annular protuberance are respectively 150mm and 166mm.
Preferably, baffle plate, one end of described baffle plate and sun it are provided with between described launch site and bundle ripple interaction region
Being connected inside pole, the other end of baffle plate is fixed on coaxial inner conductor 7；It is provided with on described baffle plate for guiding negative electrode 1 to produce
Raw strong current electron beam enters the inlet 3(of bundle ripple interaction region can become again " resonator cavity electron-beam entrance 3 "), inject
Mouth 3 is annular, and the diameter of annular is consistent with negative electrode 1 diameter.The effect of inlet 3 is to guide repetition strong current electron beam to enter Shu Bo
Interaction region, the inside/outside diameter size of inlet 3 and the annular protuberance of setting on ring-shaped emission negative electrode 1(i.e. negative electrode 1) internal-and external diameter
Consistent size, can carry out certain constriction effect under this size to strong current electron beam.
Preferably, described slow-wave structure number is 5, and 5 slow-wave structures are equidistant, and 5 slow-wave structures are arranged on same
Axle inner wire 7 is peripheral near one end of negative electrode 1.
Preferably, 5 described slow-wave structures be respectively the first slow-wave structure, the second slow-wave structure, the 3rd slow-wave structure,
4th slow-wave structure 5 and the 5th slow-wave structure 6, wherein the first slow-wave structure, the second slow-wave structure and the 3rd slow-wave structure are constituted
First three slow-wave structure 4；Between each slow-wave structure, apart 15.7mm(i.e. slow-wave structure Cycle Length is 15.7mm), Qi Zhongqian
The external diameter of three slow-wave structures 4 is 200mm, and the internal diameter of first three slow-wave structure 4 is 171mm, outside the 4th slow-wave structure 5
Footpath is 200mm, and internal diameter is 174mm, and the external diameter of the 5th slow-wave structure 6 is 200mm, and internal diameter is 178mm；Described anode beam ripple is mutual
The internal diameter of active region is 200mm, and described anode launch site external diameter is 220mm～250mm.Preferably, described slow-wave structure
For the disk-loaded waveguide with centre bore.In bundle ripple interaction region, first three slow-wave structure the 4, the 4th slow-wave structure 5 and the 5th is set
Slow-wave structure 6, owing to bundle ripple interaction region is without guiding magnetic field, therefore the impossible axially transmission range of strong current electron beam is oversize, front
The size of three slow-wave structures 4 can make the electron beam fast start-up of voltage 700kV or 580kV, power 10GW, and completes bundle
Wave energy is changed；The effect of the 4th slow-wave structure 5 is to make (first three slow-wave structure 4 institute of Conversion region in bundle ripple interaction region
Region) with the conversion in microwave extraction district (region at the 5th slow-wave structure 6 place), it is ensured that the steady mistake of microwave high efficiency extraction
Cross；The effect of the 5th slow-wave structure 6 is that microwave energy is carried out high efficiency extraction.
This utility model utilizes the guiding magnetic field of as little as 0.2T to guide strong current electron beam to bundle ripple from negative electrode 1 launch site mutual
Active region end face, in bundle ripple interaction region without guiding magnetic field.At the bundle ripple interaction region end face near negative electrode 1 with one and negative electrode 1
The consistent looping pit of diameter guides strong current electron beam to enter bundle ripple interaction region (also referred to as " bundle ripple interaction chamber "), this electron beam
The narrow annular hole of transmission channel makes to restraint ripple interaction and forms resonator cavity surely, and microwave cannot be introduced into negative electrode 1 district.High current electronics
Bundle relies on inertia and electromagnetic force axially to transmit in bundle ripple interaction chamber, by electricity during transmission in coaxial slow wave structure
Sub-beam energy is converted to microwave energy, and bundle ripple conversion efficiency reaches 50%.Pass through this utility model, it is achieved that axially high power is micro-
The function that wave device high-peak power, high bundle ripple conversion efficiency, downfield and repetition produce.
The process that is preferable to carry out of the present utility model is: with vacuum acquirement device by micro-for efficient repetition downfield high power
Vacuum in wave device processes millipascal magnitude.The high voltage of voltage 700kV or 10GW, negative electrode 1 is applied between anode and cathode
Launch strong current electron beam under the guiding of axial magnetic field strength 0.5T or 0.2T, arrive resonator cavity electron-beam entrance 3.Electronics
Bundle axially transmits in bundle ripple interaction region under inertia and electromagnetic force effect, and first three is individual restrainting ripple interaction region for strong current electron beam
Under slow-wave structure 4 effect, beam energy is efficiently converted to microwave energy.High-Power Microwave extract district (or claim extract chamber or
The region at the 5th slow-wave structure 6 place) and the effect of coaxial inner conductor 7 under, coaxial transmission is gone out.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, it should refer to
Go out, all any amendment, equivalent and improvement etc. made within spirit of the present utility model and principle, all should comprise
Within protection domain of the present utility model.
Claims (10)
1. an efficient repetition downfield high-power pulsed ion beams, it is characterised in that: it includes that anode, negative electrode, guiding magnetic field are sent out
Raw device, slow-wave structure and coaxial inner conductor, described anode interior is provided with launch site and bundle ripple interaction region, described negative electrode
Being arranged in launch site, described slow-wave structure and coaxial inner conductor are arranged in the bundle ripple interaction region of anode, described
Negative electrode is coaxial with coaxial inner conductor, and the periphery of coaxial inner conductor is fixed and be arranged in the inner side of slow-wave structure and anode, efficiently weighs
Frequently the internal evacuation of downfield high-power pulsed ion beams forms a vacuum chamber, and the vacuum of described vacuum chamber is less than 10 millipascal.
One the most according to claim 1 efficient repetition downfield high-power pulsed ion beams, it is characterised in that: described height
Effect repetition downfield high-power pulsed ion beams by producing pulse voltage 700kV, the driver drives of power 10GW.
One the most according to claim 2 efficient repetition downfield high-power pulsed ion beams, it is characterised in that: described draws
Magnetic conduction field generator is arranged on outside launch site.
4. according to a kind of efficiently repetition downfield high-power pulsed ion beams described in claim 1 or 2 or 3, it is characterised in that: institute
The guiding magnetic field generator stated is permanent magnet or alive solenoid coil, and the described anode forming launch site is cylinder
Shape, guides magnetic field generator to be looped around the periphery of cylindrical anode.
One the most according to claim 4 efficient repetition downfield high-power pulsed ion beams, it is characterised in that: described draws
The magnetic field intensity of magnetic conduction field is less than 0.5T.
One the most according to claim 1 efficient repetition downfield high-power pulsed ion beams, it is characterised in that: described the moon
Extreme portion is provided with an annular protuberance.
7. according to a kind of efficiently repetition downfield high-power pulsed ion beams described in claim 1 or 6, it is characterised in that: described
Launch site and bundle ripple interaction region between be provided with baffle plate, one end of described baffle plate is connected with anode inner side, baffle plate another
One end is fixed on coaxial inner conductor；It is provided with the strong current electron beam for guiding negative electrode to produce on described baffle plate and enters Shu Bo
The inlet of interaction region, inlet is annular, and the diameter of annular is consistent with cathode diameter.
One the most according to claim 1 efficient repetition downfield high-power pulsed ion beams, it is characterised in that: described is slow
Wave structure number is 5, and 5 slow-wave structures are equidistant, and 5 slow-wave structures are arranged on coaxial inner conductor outside one end of negative electrode
Enclose.
One the most according to claim 8 efficient repetition downfield high-power pulsed ion beams, it is characterised in that: described 5
Individual slow-wave structure is respectively the first slow-wave structure, the second slow-wave structure, the 3rd slow-wave structure, the 4th slow-wave structure and the 5th slow wave
Structure, wherein the first slow-wave structure, the second slow-wave structure and the 3rd slow-wave structure constitute first three slow-wave structure；Each slow wave is tied
At a distance of 15.7mm between structure, wherein the external diameter of first three slow-wave structure is 200mm, and the internal diameter of first three slow-wave structure is
171mm, the external diameter of the 4th slow-wave structure is 200mm, and internal diameter is 174mm, and the external diameter of the 5th slow-wave structure is 200mm, and internal diameter is
178mm；The internal diameter of described anode beam ripple interaction region is 200mm, and described anode launch site external diameter is 220mm～250mm.
A kind of efficiently repetition downfield high-power pulsed ion beams the most according to claim 8 or claim 9, it is characterised in that: described
Slow-wave structure be the disk-loaded waveguide with centre bore.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620687078.XU CN205881867U (en) | 2016-07-04 | 2016-07-04 | High -efficient heavy microwave device of downfield high power frequently |
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| CN201620687078.XU CN205881867U (en) | 2016-07-04 | 2016-07-04 | High -efficient heavy microwave device of downfield high power frequently |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106876231A (en) * | 2017-03-31 | 2017-06-20 | 中国工程物理研究院应用电子学研究所 | Zigzag profiled-cross-section solenoid magnet field structure inside and outside a kind of integrated segmented |
| CN108682605A (en) * | 2018-05-21 | 2018-10-19 | 中国工程物理研究院应用电子学研究所 | A kind of two cavity high power microwave generators of coupling and application method |
| CN108807111A (en) * | 2018-06-13 | 2018-11-13 | 中国工程物理研究院应用电子学研究所 | A kind of no magnetic field electron beam self-excitation radiation high-power pulsed ion beams |
| CN108807115A (en) * | 2018-06-13 | 2018-11-13 | 中国工程物理研究院应用电子学研究所 | A kind of end total reflection high-power pulsed ion beams |
| CN108831815A (en) * | 2018-06-13 | 2018-11-16 | 中国工程物理研究院应用电子学研究所 | A kind of coaxial high-power pulsed ion beams of periodic dielectric filling |
| CN109616394A (en) * | 2018-12-10 | 2019-04-12 | 中国工程物理研究院应用电子学研究所 | A kind of low guidance magnetic field compact high power microwave device of S-band |
| CN110612023A (en) * | 2016-12-20 | 2019-12-24 | 墨尔本大学 | Microwave application method and apparatus |
| CN110718427A (en) * | 2019-09-27 | 2020-01-21 | 中国工程物理研究院应用电子学研究所 | Coaxial high-efficiency high-power microwave device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110612023A (en) * | 2016-12-20 | 2019-12-24 | 墨尔本大学 | Microwave application method and apparatus |
| CN106876231A (en) * | 2017-03-31 | 2017-06-20 | 中国工程物理研究院应用电子学研究所 | Zigzag profiled-cross-section solenoid magnet field structure inside and outside a kind of integrated segmented |
| CN106876231B (en) * | 2017-03-31 | 2018-12-28 | 中国工程物理研究院应用电子学研究所 | It is a kind of integration segmented inside and outside zigzag profiled-cross-section solenoid magnet field structure |
| CN108682605A (en) * | 2018-05-21 | 2018-10-19 | 中国工程物理研究院应用电子学研究所 | A kind of two cavity high power microwave generators of coupling and application method |
| CN108807111A (en) * | 2018-06-13 | 2018-11-13 | 中国工程物理研究院应用电子学研究所 | A kind of no magnetic field electron beam self-excitation radiation high-power pulsed ion beams |
| CN108807115A (en) * | 2018-06-13 | 2018-11-13 | 中国工程物理研究院应用电子学研究所 | A kind of end total reflection high-power pulsed ion beams |
| CN108831815A (en) * | 2018-06-13 | 2018-11-16 | 中国工程物理研究院应用电子学研究所 | A kind of coaxial high-power pulsed ion beams of periodic dielectric filling |
| CN108831815B (en) * | 2018-06-13 | 2020-09-22 | 中国工程物理研究院应用电子学研究所 | Periodic dielectric medium filled coaxial high-power microwave device |
| CN109616394A (en) * | 2018-12-10 | 2019-04-12 | 中国工程物理研究院应用电子学研究所 | A kind of low guidance magnetic field compact high power microwave device of S-band |
| CN109616394B (en) * | 2018-12-10 | 2020-09-22 | 中国工程物理研究院应用电子学研究所 | S-band low-guiding magnetic field compact high-power microwave device |
| CN110718427A (en) * | 2019-09-27 | 2020-01-21 | 中国工程物理研究院应用电子学研究所 | Coaxial high-efficiency high-power microwave device |
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