CN205406552U - LED sapphire piece substrate structure - Google Patents
LED sapphire piece substrate structure Download PDFInfo
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- CN205406552U CN205406552U CN201620170536.2U CN201620170536U CN205406552U CN 205406552 U CN205406552 U CN 205406552U CN 201620170536 U CN201620170536 U CN 201620170536U CN 205406552 U CN205406552 U CN 205406552U
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- gan layer
- type gan
- sapphire
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- type electrode
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 35
- 239000010980 sapphire Substances 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 title abstract 3
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 229910000679 solder Inorganic materials 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- Led Devices (AREA)
Abstract
The utility model discloses a LED sapphire piece substrate structure, including metab and sapphire piece, the sapphire piece is fixed on the metab through the bonding coating, be equipped with N type gaN layer on the sapphire piece, there is N type electrode on N type gaN layer upper surface right side, N type electrode passes through the solder joint to be fixed on N type gaN layer, there is the quantum well in the left side of N type electrode, the quantum well is fixed on N type gaN layer, the quantum well upper surface is equipped with P type gaN layer, be equipped with the electric current extension layer on the P type gaN layer, the side that keeps left on the electric current extension layer is equipped with P type electrode. This kind of LED sapphire piece substrate structure, through with the sapphire through processing the sapphire piece into because the processing technology cost is lower, consequently hand over comparatively cheap, sapphire stable fine, better can the application in the high temperature growth course, the mechanical strength of sapphire height is easily handled and is washd.
Description
Technical field
This utility model relates to a kind of substrat structure, is specially a kind of LED sapphire sheet substrat structure, belongs to field of LED illumination.
Background technology
LED is a kind of light emitting semiconductor device, is nowadays used as display lamp, display screen etc. widely, the advantage such as it has, and light efficiency is high, radiationless, life-span length, low-power consumption and environmental protection.The manufacture of LED needs a kind of backing material, generally has silicon, carborundum and GaAs etc. as backing material, but these material prices are too high, and crystal mass and machining property are poor, it is impossible to enough realize mass production and produce.
For solving the problems referred to above, therefore it is proposed that a kind of LED sapphire sheet substrat structure.
Utility model content
The technical problems to be solved in the utility model is the defect overcoming prior art, it is provided that a kind of LED sapphire sheet substrat structure.
In order to solve above-mentioned technical problem, this utility model provides following technical scheme:
This utility model one LED sapphire sheet substrat structure, including metab and sapphire sheet, described sapphire sheet is fixed on metab by adhesive coating, described sapphire sheet is provided with N-type GaN layer, N-type electrode is had on the right side of described N-type GaN layer upper surface, described N-type electrode is fixed in N-type GaN layer by solder joint, there is SQW in the left side of described N-type electrode, described SQW is fixed in N-type GaN layer, described SQW upper surface is provided with P type GaN layer, described P type GaN layer is provided with current extending, and side that described current extending keeps left is provided with P-type electrode.
Further, described SQW adopts GaN material.
Further, described current extending is metallization mixed materials.
This utility model reaches to provide the benefit that: be processed into sapphire sheet by being passed through by sapphire, owing to processing technique is less costly, therefore hand over individual comparatively cheap, sapphire stability is fine, better can be used in higher temperature growth processes, sapphire mechanical strength is high, it is easy to processes and cleans.
Accompanying drawing explanation
Accompanying drawing is used for providing being further appreciated by of the present utility model, and constitutes a part for description, is used for explaining this utility model, is not intended that restriction of the present utility model together with embodiment of the present utility model.In the accompanying drawings:
Fig. 1 is structural representation of the present utility model；
In figure: 1, metab；2, adhesive coating；3, sapphire sheet；4, SQW；5, N-type GaN layer；6, solder joint；7, N-type electrode；8, P type GaN layer；9, current extending；10, P-type electrode.
Detailed description of the invention
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is illustrated, it will be appreciated that preferred embodiment described herein is merely to illustrate and explains this utility model, be not used to limit this utility model.
Embodiment 1
As shown in Figure 1, a kind of LED sapphire sheet substrat structure, including metab 1 and sapphire sheet 3, described sapphire sheet 3 is fixed on metab 1 by adhesive coating 2, described sapphire sheet 3 is provided with N-type GaN layer 5, N-type electrode 7 is had on the right side of described N-type GaN layer 5 upper surface, described N-type electrode 7 is fixed in N-type GaN layer 5 by solder joint 6, there is SQW 4 in the left side of described N-type electrode 7, described SQW 4 is fixed in N-type GaN layer 5, described SQW 4 upper surface is provided with P type GaN layer 8, described P type GaN layer 8 is provided with current extending 9, the side that keeps left on described current extending 9 is provided with P-type electrode 10.
Described SQW 4 adopts GaN material, and described current extending 9 is metallization mixed materials.
It should be noted that, this utility model one LED sapphire sheet substrat structure operation principle is: by being energized to N-type electrode 7 and P-type electrode 10, voltage is formed between N-type GaN layer 5 and P type GaN layer 8, produce photon, photon is sent out to fluorescent material last layer by the refraction of sapphire sheet 3, thus producing light source.
Last it is noted that the foregoing is only preferred embodiment of the present utility model, it is not limited to this utility model, although this utility model being described in detail with reference to previous embodiment, for a person skilled in the art, technical scheme described in foregoing embodiments still can be modified by it, or wherein portion of techniques feature carries out equivalent replacement.All within spirit of the present utility model and principle, any amendment of making, equivalent replacement, improvement etc., should be included within protection domain of the present utility model.
Claims (3)
- null1. a LED sapphire sheet substrat structure，Including metab (1) and sapphire sheet (3)，Described sapphire sheet (3) is fixed on metab (1) by adhesive coating (2)，It is characterized in that，Described sapphire sheet (3) is provided with N-type GaN layer (5)，N-type electrode (7) is had on the right side of described N-type GaN layer (5) upper surface，Described N-type electrode (7) is fixed in N-type GaN layer (5) by solder joint (6)，There is SQW (4) in the left side of described N-type electrode (7)，Described SQW (4) is fixed in N-type GaN layer (5)，Described SQW (4) upper surface is provided with P type GaN layer (8)，Described P type GaN layer (8) is provided with current extending (9),The side that keeps left on described current extending (9) is provided with P-type electrode (10).
- 2. a kind of LED sapphire sheet substrat structure according to claim 1, it is characterised in that described SQW (4) adopts GaN material.
- 3. a kind of LED sapphire sheet substrat structure according to claim 1, it is characterised in that described current extending (9) is metallization mixed materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620170536.2U CN205406552U (en) | 2016-03-07 | 2016-03-07 | LED sapphire piece substrate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620170536.2U CN205406552U (en) | 2016-03-07 | 2016-03-07 | LED sapphire piece substrate structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205406552U true CN205406552U (en) | 2016-07-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620170536.2U Active CN205406552U (en) | 2016-03-07 | 2016-03-07 | LED sapphire piece substrate structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205406552U (en) |
-
2016
- 2016-03-07 CN CN201620170536.2U patent/CN205406552U/en active Active
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |