CN205376562U - Refraction luminous device - Google Patents

Abstract

A refraction light source light-emitting device, comprising a silicon substrate with an upper surface, the upper surface has a groove, a semiconductor layer is arranged in the groove, and the semiconductor layer is sequentially arranged with a buffer layer, a reflective layer, a doped lower compound layer, a quantum well layer, On the upper compound layer, the upper electrode is set on the upper compound layer, and the lower electrode is set on the lower compound layer, which are respectively set on both sides of the tank body. The lower compound layer set under the quantum well layer and the upper compound layer set above the quantum well layer are conductive. The lower and upper electrodes are respectively connected, and the whole is used as a light-emitting layer. Arc-shaped prisms are arranged inside the light-emitting layer in the groove to integrate the light emitted by the light-emitting layer, and the buffer layer includes a high-temperature buffer layer and a low-temperature buffer layer. The utility model overcomes the problem of poor light source effect of traditional light-emitting devices through the arrangement of prisms.

Description

A refraction light source light emitting device

technical field

The utility model belongs to the field of semiconductors, more specifically the utility model relates to a semiconductor light emitting device.

Background technique

Solid-state light sources, such as light-emitting diodes (LEDs) and laser diodes, offer significant advantages over forms of lighting such as incandescent or fluorescent lamps. The three primary colors of red, green and blue are arranged in a reasonable array, which can be adjusted as a white or colored light source. At this point, solid-state light sources are generally more efficient and generate less heat than traditional incandescent or fluorescent lights. Although solid-state lighting technology has certain technical advantages, the existing semiconductor structures and devices are relatively expensive for solid-state lighting. Traditional solid-state light sources emit light by placing a layer of luminescent material on a substrate such as silicon carbide or sapphire.

Utility model content

The utility model provides a novel refraction light source light-emitting device, which can effectively improve the light effect through the arrangement of the lens on the surface of the device.

A refraction light source light-emitting device, comprising a silicon substrate with an upper surface, the upper surface has a groove, a semiconductor layer is arranged in the groove, and the semiconductor layer is sequentially arranged with a buffer layer, a reflective layer, a doped lower compound layer, a quantum well layer, The upper compound layer, the upper electrode is arranged on the upper compound layer, and the lower electrode is arranged on the lower compound layer, respectively arranged on both sides of the tank body,

The lower compound layer arranged under the quantum well layer and the upper compound layer arranged above the quantum well layer are conductive, respectively connected to the lower and upper electrodes, and serve as a light-emitting layer as a whole.

Arc-shaped prisms are arranged inside the light-emitting layer in the groove to integrate the light emitted by the light-emitting layer, and the buffer layer includes a high-temperature buffer layer and a low-temperature buffer layer.

The buffer layer, reflective layer and quantum well layer can be formed using atomic layer deposition, metal organic chemical vapor deposition, plasma enhanced chemical vapor deposition, chemical vapor deposition or physical vapor deposition. Doping the lower compound layer and the upper compound layer may be formed by deposition.

When light is emitted, a voltage is applied through the lower and upper electrodes connected to the doped lower compound layer and the upper compound layer, respectively. Current passing through the quantum well layer produces light emission.

The lower compound layer and the upper compound layer may be n-doped and the other p-doped. The disclosed structures are suitable for use with green, blue and other colored lamps.

The utility model overcomes the problem of poor light source effect of traditional light-emitting devices through the arrangement of prisms.

Description of drawings

Fig. 1 is a sectional view of the utility model.

Fig. 2 is a structure diagram of the semiconductor layer of the present invention.

detailed description

A refraction light source light-emitting device, comprising a silicon substrate 5 with an upper surface, the upper surface has a groove, a semiconductor layer 2 is arranged in the groove, a buffer layer 231, a reflective layer 232, a lower compound layer 240, and a quantum The well layer 250, the upper compound layer 260, the upper electrode 1 is arranged on the upper compound layer 260, and the lower electrode 4 is arranged on the lower compound layer 240, respectively arranged on both sides of the tank body,

The lower compound layer 240 and the quantum well layer 250 disposed on the lower part of the quantum well layer 250, and the upper compound layer 260 disposed on the upper part are conductive, respectively connected to the lower and upper electrodes, and serve as a light-emitting layer as a whole.

Arc-shaped prisms are arranged inside the light-emitting layer in the groove to integrate the light emitted by the light-emitting layer. The buffer layer includes a high-temperature buffer layer and a low-temperature buffer layer.

The buffer layer, reflective layer and quantum well layer can be formed using atomic layer deposition, metal organic chemical vapor deposition, plasma enhanced chemical vapor deposition, chemical vapor deposition or physical vapor deposition. The doped lower compound layer 240 and the upper compound layer 260 may be formed by deposition.

When light is emitted, a voltage is applied through the lower and upper electrodes connected to the doped lower compound layer 240 and the upper compound layer 260, respectively. Current passes through the quantum well layer 250 to generate light.

The lower compound layer and the upper compound layer may be n-doped and the other p-doped. The disclosed structures are suitable for use with green, blue and other colored lamps.

It should be noted that changes and changes made by those skilled in the art do not depart from the spirit and scope of the utility model, and should all be within the protection scope of the appended claims of the utility model.

Claims (3)

1. A refraction light source light-emitting device, comprising a silicon substrate with an upper surface, is characterized in that the upper surface has a groove, and a semiconductor layer is arranged in the groove, and the semiconductor layer is successively provided with a buffer layer reflective layer, and the doped lower compound Layer, quantum well layer, upper compound layer, the upper electrode is set on the upper compound layer, the lower electrode is set on the lower compound layer, respectively set on both sides of the tank body, the lower compound layer set on the lower part of the quantum well layer and the upper part of the quantum well layer set The upper compound layer is conductive, respectively connected to the lower and upper electrodes, and the whole is used as a light-emitting layer, and an arc-shaped prism is arranged inside the light-emitting layer in the groove. 2. A refractive light source light-emitting device according to claim 1, wherein the buffer layer comprises a high-temperature buffer layer and a low-temperature buffer layer. 3. A kind of refraction light source light-emitting device as claimed in claim 1, it is characterized in that: buffer layer, reflection layer and quantum well layer can use atomic layer deposition, metal organic chemical vapor deposition, plasma enhanced chemical vapor deposition, chemical vapor phase deposition deposition or physical vapor deposition.