CN204790963U - High -speed mass -memory unit based on TF card array - Google Patents
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Abstract
本实用新型提出了一种基于TF卡阵列的高速大容量存储设备,包括用于实现存储阵列控制及接口的FPGA,以及与FPGA连接的用于数据缓存的DDR外部存储器、用于存储数据信息的数据存储TF卡阵列、用于存储管理信息的管理信息存储TF卡阵列。本实用新型通过创新性地采用TF卡阵列作为存储介质,依靠阵列的并行读写控制实现了高的数据吞吐率,依靠方便的可拆卸结构实现了极佳的可维修性。本实用新型既有效继承了NAND?Flash存储芯片的小延迟、低功耗、低重量、高数据吞吐率以及良好抗震性等优势,又屏蔽了NAND?Flash存储芯片的复杂管理系统,还有效克服了SATA固态硬盘用于模块级高速存储产品的控制复杂性和更换成本高的问题,具有极高的技术和经济效益。
The utility model proposes a high-speed and large-capacity storage device based on a TF card array, including an FPGA for realizing storage array control and interface, and a DDR external memory connected to the FPGA for data caching, and a device for storing data information. Data storage TF card array, management information storage TF card array for storing management information. The utility model innovatively adopts the TF card array as the storage medium, relies on the parallel read-write control of the array to realize a high data throughput rate, and relies on a convenient detachable structure to realize excellent maintainability. The utility model not only effectively inherits the NAND? The advantages of Flash memory chips such as small delay, low power consumption, low weight, high data throughput rate, and good shock resistance have shielded NAND? The complex management system of the Flash memory chip also effectively overcomes the control complexity and high replacement cost of SATA solid-state hard drives used in module-level high-speed storage products, and has extremely high technical and economic benefits.
Description
技术领域 technical field
本实用新型涉及高速大容量存储设备领域,特指基于TF卡阵列的高速大容量存储设备。 The utility model relates to the field of high-speed and large-capacity storage devices, in particular to high-speed and large-capacity storage devices based on TF card arrays.
背景技术 Background technique
目前高速大容量存储技术的方案有三类:基于SATA磁介质硬盘阵列的高速大容量存储方案、基于SATA固态硬盘或固态硬盘阵列的高速大容量存储方案、基于NANDFlash存储芯片的高速大容量存储方案。其中基于磁介质硬盘或固态硬盘的方案多用于计算机或服务器平台的系统级解决方案,基于FLASH的方案多用于独立存储的模块级解决方案。近年来,由于FPGA的SATA控制器IP核的出现,也有基于SATA固态硬盘的模块级解决方案出现。 At present, there are three types of high-speed and large-capacity storage technology solutions: high-speed and large-capacity storage solutions based on SATA magnetic media hard disk arrays, high-speed and large-capacity storage solutions based on SATA solid-state drives or solid-state hard disk arrays, and high-speed and large-capacity storage solutions based on NAND Flash memory chips. Among them, solutions based on magnetic hard disks or solid state drives are mostly used for system-level solutions on computer or server platforms, and solutions based on FLASH are mostly used for module-level solutions for independent storage. In recent years, due to the emergence of FPGA SATA controller IP cores, there are also module-level solutions based on SATA solid-state drives.
基于SATA磁介质硬盘阵列的高速大容量存储方案缺陷:磁介质硬盘作为传统存储介质,由于其成本低廉,成熟度高,一直是大型存储系统的主流选择。但由于其机械结构和物理特性的限制,磁介质硬盘抗震性差、单盘传输速度慢且管理复杂,因此以其为介质的高速存储系统通常很难脱离操作系统的管理而单独存在,且系统功耗高、体积庞大,难以提供模块级的高速存储产品。 Disadvantages of high-speed and large-capacity storage solutions based on SATA magnetic media hard disk arrays: As traditional storage media, magnetic media hard disks have always been the mainstream choice for large-scale storage systems due to their low cost and high maturity. However, due to the limitations of its mechanical structure and physical characteristics, magnetic media hard disks have poor shock resistance, slow single-disk transmission speed, and complicated management. High power consumption and bulky size make it difficult to provide module-level high-speed storage products.
基于NANDFlash存储芯片的高速大容量存储方案缺陷:NANDFlash存储芯片以其延迟小、功耗低、数据吞吐率高、重量轻以及抗震性好等优势,近年来在数据存储领域得到了广泛应用。然而,由于NANDFlash存储芯片天生存在坏块问题,且难以在制造过程中得到解决,因此直接使用NANDFlash存储芯片阵列作为存储介质的存储系统就需要直接实现坏块管理、ECC校验等控制逻辑,导致系统控制复杂度很高。加之NANDFlash存在一定的读写生命周期,随着坏块的扩散容易导致整个存储芯片的损坏,因此基于NANDFlash存储芯片的高速大容量存储的维修难度较大。 Defects of high-speed and large-capacity storage solutions based on NAND Flash memory chips: NAND Flash memory chips have been widely used in the field of data storage in recent years due to their advantages such as low delay, low power consumption, high data throughput, light weight, and good shock resistance. However, due to the inherent problem of bad blocks in NAND Flash memory chips, which are difficult to solve in the manufacturing process, storage systems that directly use NAND Flash memory chip arrays as storage media need to directly implement control logic such as bad block management and ECC verification, resulting in The system control complexity is very high. In addition, NAND Flash has a certain read and write life cycle. With the spread of bad blocks, it is easy to cause damage to the entire memory chip. Therefore, the maintenance of high-speed and large-capacity storage based on NAND Flash memory chips is relatively difficult.
基于SATA固态硬盘或固态硬盘阵列的高速大容量存储方案缺陷:SATA固态硬盘的核心存储介质仍然是NANDFlash存储芯片,但在NANDFlash存储芯片阵列的外部封装了相应的管理逻辑,加之接口统一到标准的SATA接口,因此在计算机或服务器平台的大容量存储系统中市场份额越来越大。但由于SATA控制逻辑的复杂性,当用于模块级高速存储产品时,其控制系统的复杂性导致其系统设计和实现难度很大。加之由于其集成度高,一旦其中的NANDFlash存储芯片出现损坏,更换的成本较高。 Defects of high-speed and large-capacity storage solutions based on SATA solid-state drives or solid-state drive arrays: the core storage medium of SATA solid-state drives is still NAND Flash memory chips, but the corresponding management logic is packaged outside the NAND Flash memory chip array, and the interface is unified to the standard SATA interface, so the market share in the large-capacity storage system of the computer or server platform is increasing. However, due to the complexity of SATA control logic, when used in module-level high-speed storage products, the complexity of its control system makes its system design and implementation very difficult. In addition, due to its high integration, once the NAND Flash memory chip is damaged, the replacement cost is relatively high.
实用新型内容 Utility model content
本实用新型提出一种基于TF卡阵列的高速大容量存储设备,能够解决模块级高速存储产品的设计难度大、维修成本高、维修更换难度大的问题。 The utility model proposes a high-speed and large-capacity storage device based on a TF card array, which can solve the problems of high design difficulty, high maintenance cost and difficult maintenance and replacement of module-level high-speed storage products.
本实用新型的技术方案是这样实现的:一种基于TF卡阵列的高速大容量存储设备,包括用于实现存储阵列控制及接口的FPGA,以及与FPGA连接的用于数据缓存的DDR外部存储器、用于存储数据信息的数据存储TF卡阵列、用于存储管理信息的管理信息存储TF卡阵列;所述数据存储TF卡阵列既可以按RAID0最大容量配置模式使用,也可以按RAID1冗余存储的高可靠模式使用,所述FPGA为一个集成的模块,该模块的外部设有两个接口。 The technical scheme of the utility model is realized in that a kind of high-speed large-capacity storage device based on the TF card array includes an FPGA for realizing storage array control and an interface, and a DDR external memory for data buffering connected with the FPGA, A data storage TF card array for storing data information, a management information storage TF card array for storing management information; the data storage TF card array can be used in RAID0 maximum capacity configuration mode, or can be stored redundantly in RAID1 In the high-reliability mode, the FPGA is an integrated module, and the outside of the module is provided with two interfaces.
作为优选,所述模块的外部接口主要包括用于收发高速数据的4个3.125GbpsGTX接口、用于收发控制命令和状态信息的双向SPI总线接口两个部分。 Preferably, the external interface of the module mainly includes four 3.125GbpsGTX interfaces for sending and receiving high-speed data, and two-way SPI bus interface for sending and receiving control commands and status information.
作为优选,所述模块还包括一个可以用于保存数据存储TF卡阵列中存储数据的对应管理信息的管理信息存储TF卡阵列。 Preferably, the module further includes a management information storage TF card array that can be used to save corresponding management information of data stored in the data storage TF card array.
与现有技术相比,本实用新型的优点在于:本实用新型通过创新性地采用TF卡阵列作为存储介质,依靠阵列的并行读写控制实现了高的数据吞吐率,依靠方便的可拆卸结构实现了极佳的可维修性。本实用新型既有效继承了NANDFlash存储芯片的小延迟、低功耗、低重量、高数据吞吐率以及良好抗震性等优势,又屏蔽了NANDFlash存储芯片的复杂管理系统,还有效克服了SATA固态硬盘用于模块级高速存储产品的控制复杂性和更换成本高的问题,具有极高的技术和经济效益。 Compared with the prior art, the utility model has the advantages that: the utility model innovatively adopts the TF card array as the storage medium, relies on the parallel read and write control of the array to achieve high data throughput rate, and relies on the convenient detachable structure Excellent maintainability is achieved. The utility model not only effectively inherits the advantages of small delay, low power consumption, low weight, high data throughput rate and good shock resistance of the NAND Flash storage chip, but also shields the complex management system of the NAND Flash storage chip, and effectively overcomes the SATA solid-state hard disk It is used for the problems of control complexity and high replacement cost of module-level high-speed storage products, and has extremely high technical and economic benefits.
附图说明 Description of drawings
图1为本实用新型的基于TF卡阵列的高速数据存储模块硬件组成框图; Fig. 1 is a block diagram of the hardware composition of the high-speed data storage module based on the TF card array of the present utility model;
图2为本实用新型的存储阵列控制及接口FPGA逻辑组成框图。 Fig. 2 is a block diagram of storage array control and interface FPGA logic composition of the utility model.
具体实施方式 Detailed ways
下面将结合本实用新型实施例中的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本实用新型一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本实用新型保护的范围。 The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. example. Based on the embodiments of the present utility model, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present utility model.
实施例:参见图1和图2,一种基于TF卡阵列的高速大容量存储设备,硬件的主要组成部分包括用于实现存储阵列控制及接口的FPGA、用于数据缓存的DDR外部存储器、用于存储数据信息的数据存储TF卡阵列、用于存储管理信息的管理信息存储TF卡阵列。其中数据存储TF卡阵列既可以按RAID0最大容量配置模式使用,也可以按RAID1冗余存储的高可靠模式使用。模块的外部接口主要包括用于收发高速数据的4个3.125GbpsGTX接口、用于收发控制命令和状态信息的双向SPI总线接口两个部分。 Embodiment: referring to Fig. 1 and Fig. 2, a kind of high-speed large-capacity storage device based on TF card array, the main components of hardware include the FPGA for realizing storage array control and interface, the DDR external memory for data caching, and the Data storage TF card array for storing data information, management information storage TF card array for storing management information. Among them, the data storage TF card array can be used not only in RAID0 maximum capacity configuration mode, but also in high reliability mode of RAID1 redundant storage. The external interface of the module mainly includes four 3.125GbpsGTX interfaces for sending and receiving high-speed data, and two-way SPI bus interface for sending and receiving control commands and status information.
新产品初始化时,上层系统通过SPI总线发送阵列模式配置指令,将数据存储TF卡阵列配置成大容量RAID0模式或高可靠RAID1冗余模式,并完成数据存储TF卡阵列和管理信息存储TF卡阵列的格式化工作。 When the new product is initialized, the upper system sends the array mode configuration command through the SPI bus, configures the data storage TF card array into a large-capacity RAID0 mode or a high-reliability RAID1 redundant mode, and completes the data storage TF card array and management information storage TF card array formatting work.
数据存储时,上层系统通过SPI总线发送存储起始结束位置指令及开始存储指令,存储阵列控制及接口FPGA接收控制指令并完成译码,然后接收GTX总线传输的数据并在DDR外部存储器中进行缓存,缓存后的数据通过数据存储TF卡阵列控制器的DMA控制器实现DDR缓存数据到TF卡的存储。如果是RAID1模式,相同的数据会被拷贝并存储到不同的数据存储区域中。 When data is stored, the upper system sends the storage start and end position command and the start storage command through the SPI bus, the storage array control and interface FPGA receives the control command and completes the decoding, and then receives the data transmitted by the GTX bus and caches it in the DDR external memory , the cached data is stored in the DDR cache data to the TF card through the DMA controller of the data storage TF card array controller. In RAID1 mode, the same data will be copied and stored in different data storage areas.
在使用DMA控制器进行缓存数据和TF卡的交换时,模块采用了“先准备、先到达、先服务”的服务响应和多组乒乓缓冲机制,动态分配内存地址空间,从而最大限度减少单片TF卡等待延迟,保障数据传输的实时可靠性。数据读取时,上层系统通过SPI总线发送数据读取的起始结束位置指令及开始读取指令。存储阵列控制及接口FPGA接收控制指令并完成译码,通过数据存储TF卡阵列控制器的DMA控制器将数据存储TF卡阵列的各片TF卡数据读取到对应的缓冲区并完成数据块的编号排序工作,最后再将编号后的数据块通过GTX接口返回给上层系统。 When using the DMA controller to exchange cached data and TF cards, the module adopts the service response of "prepare first, arrive first, serve first" and a multi-set ping-pong buffer mechanism to dynamically allocate memory address space, thereby minimizing the number of single-chip The TF card waits for a delay to ensure the real-time reliability of data transmission. When the data is read, the upper system sends the start and end position instruction of the data reading and the start reading instruction through the SPI bus. Storage array control and interface FPGA receives the control command and completes the decoding, reads the data of each TF card in the data storage TF card array to the corresponding buffer through the DMA controller of the data storage TF card array controller and completes the data block Numbering and sorting work, and finally the numbered data blocks are returned to the upper system through the GTX interface.
为了有效组织高速存储的数据,模块还提供了一个管理信息存储TF卡阵列,可以用于保存数据存储TF卡阵列中存储数据的对应管理信息及其它辅助信息(如数据存储的时间信息、地理位置信息、周边环境信息等),从而帮助模块存储数据文件管理系统以及数据相关信息管理数据库硬备份系统的高效实现。存储和读取管理信息、辅助信息时,模块采用与数据存储和读取相类似的逻辑进行实现。 In order to effectively organize high-speed stored data, the module also provides a management information storage TF card array, which can be used to save the corresponding management information and other auxiliary information (such as data storage time information, geographical location) of the data stored in the data storage TF card array Information, surrounding environment information, etc.), thereby helping the efficient realization of the module storage data file management system and the hard backup system of the data-related information management database. When storing and reading management information and auxiliary information, the module uses logic similar to data storage and reading to implement.
图2为本实用新型存储阵列控制及接口FPGA逻辑组成框图。 Fig. 2 is a block diagram of storage array control and interface FPGA logic composition of the utility model.
本实用新型创新设计并实现了基于TF卡阵列的高速数据存储结构;创新设计并实现了TF卡阵列的并行存储和读取管理技术,采用“先准备,先到达,先服务”的机制,数据吞吐率超过1G字节/秒;创新实现了可删减配置的TF卡阵列管理技术,采用“动态内存分配DMA管理机制”,既可以按RAID0最大容量配置模式使用,也可以按RAID1冗余存储的高可靠模式使用,且阵列组成的TF卡数量可根据吞吐率要求在1~32片中按需配置。本实用新型的优势:存储延迟小、数据吞吐率高、功耗低、重量轻、抗震性好、维修更换方便。 The utility model innovatively designs and realizes the high-speed data storage structure based on the TF card array; innovatively designs and realizes the parallel storage and reading management technology of the TF card array, adopts the mechanism of "prepare first, arrive first, serve first", and the data The throughput rate exceeds 1G bytes/s; innovatively realizes the TF card array management technology that can be deleted and configured, and adopts the "dynamic memory allocation DMA management mechanism", which can be used in RAID0 maximum capacity configuration mode or RAID1 redundant storage The high-reliability mode is used, and the number of TF cards composed of the array can be configured on demand in 1 to 32 pieces according to the throughput requirements. The utility model has the advantages of small storage delay, high data throughput rate, low power consumption, light weight, good shock resistance, and convenient maintenance and replacement.
本实用新型中所出现的缩略语的英文全称及中文定义: The English full name and Chinese definition of the abbreviations appearing in the utility model:
TF——Trans-flashCard,快闪存储器卡 TF - Trans-flashCard, flash memory card
IP——IntellectualPropertycore,具有特定电路功能的硬件描述语言程序 IP——IntellectualPropertycore, a hardware description language program with specific circuit functions
ECC——ErrorCorrectingCode,错误检查和纠正 ECC - ErrorCorrectingCode, error checking and correction
DDR——DoubleDataRate,双倍速率同步动态随机存储器 DDR - DoubleDataRate, double rate synchronous dynamic random access memory
SPI——SerialPeripheralInterface,串行外设接口 SPI - SerialPeripheralInterface, Serial Peripheral Interface
DMA——DirectMemoryAccess,直接内存存取 DMA - DirectMemoryAccess, direct memory access
SATA——SerialAdvancedTechnologyAttachment,串行高级技术连接 SATA - SerialAdvancedTechnologyAttachment, serial advanced technology connection
RAID——RedundantArrayofIndependentDisks,独立磁盘冗余阵列 RAID——RedundantArrayofIndependentDisks, redundant array of independent disks
FPGA——FieldProgrammableGateArray,现场可编程逻辑门阵列 FPGA——FieldProgrammableGateArray, Field Programmable Logic Gate Array
RAID0——RedundantArrayofIndependentDisks0,0级磁盘阵列,原始阵列 RAID0——RedundantArrayofIndependentDisks0, level 0 disk array, original array
RAID1——RedundantArrayofIndependentDisks1,1级磁盘阵列,镜像阵列 RAID1——RedundantArrayofIndependentDisks1, level 1 disk array, mirror array
以上所述仅为本实用新型的较佳实施例而已,并不用以限制本实用新型,凡在本实用新型的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本实用新型的保护范围之内。 The above descriptions are only preferred embodiments of the present utility model, and are not intended to limit the present utility model. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present utility model shall be included in the Within the protection scope of the present utility model.
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CN104516688A (en) * | 2015-01-21 | 2015-04-15 | 成都市智讯联创科技有限责任公司 | High-speed large-capacity storage technology and equipment based on TF card arrays |
CN113254386A (en) * | 2021-04-21 | 2021-08-13 | 上海志良电子科技有限公司 | Data storage system and unloading method |
-
2015
- 2015-01-21 CN CN201520040497.XU patent/CN204790963U/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104516688A (en) * | 2015-01-21 | 2015-04-15 | 成都市智讯联创科技有限责任公司 | High-speed large-capacity storage technology and equipment based on TF card arrays |
CN113254386A (en) * | 2021-04-21 | 2021-08-13 | 上海志良电子科技有限公司 | Data storage system and unloading method |
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