CN204325492U - A kind of device of large area deposition Graphene - Google Patents
A kind of device of large area deposition Graphene Download PDFInfo
- Publication number
- CN204325492U CN204325492U CN201420786714.5U CN201420786714U CN204325492U CN 204325492 U CN204325492 U CN 204325492U CN 201420786714 U CN201420786714 U CN 201420786714U CN 204325492 U CN204325492 U CN 204325492U
- Authority
- CN
- China
- Prior art keywords
- ventilation cavity
- cavity
- metal base
- large area
- graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
本实用新型涉及石墨烯生长设备技术领域,尤其涉及一种大面积生长石墨烯的装置。包括石英管、通气腔体、金属基底,所述通气腔体内部中空,所述通气腔体为螺旋式柱状结构,所述金属基底的形状与所述通气腔体的形状相匹配,所述金属基底沿着所述通气腔体内表面螺旋卷曲,所述通气腔体最内圈的端部与所述金属基底最内圈的端部固定连接在一起,所述通气腔体的最内圈的一侧和最外圈的同一侧上均设有进气口,所述通气腔体的内表面上设有多个出气孔,所述石英管套设在所述通气腔体外,包覆住整个所述通气腔体。本实用新型的有益效果是:结构简单,有利于大面积卷式生长石墨烯,节省空间,同时石墨烯生长均匀、提高产量。
The utility model relates to the technical field of graphene growth equipment, in particular to a device for growing graphene in a large area. It includes a quartz tube, a venting cavity, and a metal base. The venting cavity is hollow inside, and the venting cavity is a spiral columnar structure. The shape of the metal base matches the shape of the venting cavity. The metal The base is spirally curled along the inner surface of the ventilation cavity, the end of the innermost circle of the ventilation cavity is fixedly connected with the end of the innermost circle of the metal base, and one of the innermost circles of the ventilation cavity Air inlets are provided on the same side of the side and the outermost ring, and a plurality of air outlets are provided on the inner surface of the ventilation cavity, and the quartz tube is sleeved outside the ventilation cavity to cover the entire the ventilation cavity. The beneficial effect of the utility model is that the structure is simple, it is beneficial to grow graphene in a large-area roll, saves space, and at the same time, the graphene grows uniformly and increases the output.
Description
技术领域technical field
本实用新型涉及石墨烯生长设备技术领域,尤其涉及一种大面积生长石墨烯的装置。The utility model relates to the technical field of graphene growth equipment, in particular to a device for growing graphene in a large area.
背景技术Background technique
石墨烯是碳原子基于sp2杂化组成的六角蜂巢状结构,仅一个原子层厚的二维晶体。2004年,Andre Geim和Konstant in Novoselov等人发现稳定存在的单层石墨烯,也因其在石墨烯方面的开创性工作而获得2010年诺贝尔物理学奖。近年来,石墨烯在微电子、量子物理、材料、化学等领域都表现出许多令人振奋的性能和潜在的应用前景,吸引了科学界和工业界的广泛关注。石墨烯具有优异的力、热、光、电等性质。石墨烯常温下的电子迁移率超过15000cm2/V·s,超过碳纳米管和硅晶体,而电阻率只约10-6Ω·cm,比铜或银的更低,是目前世上电阻率最小的材料。而其高达97.7%的全波段透光率是其他导电材料难以匹敌的。目前工业上通常采用金属基底的化学气相沉积(CVD)法作为制备石墨烯。但是对于大尺寸的石墨烯生长还存在着工艺难度,缺乏一种石墨烯大面积生长的生长装置。Graphene is a hexagonal honeycomb structure composed of carbon atoms based on sp2 hybridization, a two-dimensional crystal with a thickness of only one atomic layer. In 2004, Andre Geim and Konstant in Novoselov and others discovered stable single-layer graphene, and also won the 2010 Nobel Prize in Physics for their pioneering work on graphene. In recent years, graphene has shown many exciting properties and potential application prospects in the fields of microelectronics, quantum physics, materials, chemistry, etc., and has attracted extensive attention from the scientific and industrial circles. Graphene has excellent mechanical, thermal, optical, electrical and other properties. The electron mobility of graphene at room temperature exceeds 15000cm2/V·s, surpassing carbon nanotubes and silicon crystals, while the resistivity is only about 10 -6 Ω·cm, lower than that of copper or silver, and is currently the world's smallest resistivity Material. And its full-band light transmittance as high as 97.7% is unmatched by other conductive materials. At present, the chemical vapor deposition (CVD) method of metal substrates is usually used in the industry to prepare graphene. However, there are still technical difficulties in the growth of large-scale graphene, and there is a lack of a growth device for large-scale growth of graphene.
实用新型内容Utility model content
本实用新型所要解决的技术问题是提供一种大面积生长石墨烯的装置,克服了石墨在传统生长装置气体分布不均、制备量小、产能低、的缺陷。The technical problem to be solved by the utility model is to provide a device for growing graphene in a large area, which overcomes the defects of uneven gas distribution, small preparation amount and low production capacity of graphite in the traditional growth device.
本实用新型解决上述技术问题的技术方案如下:一种大面积生长石墨烯的装置,包括石英管、通气腔体、金属基底,所述通气腔体内部中空,所述通气腔体为螺旋式柱状结构,所述金属基底的形状与所述通气腔体的形状相匹配,所述金属基底沿着所述通气腔体内表面螺旋卷曲,所述通气腔体最内圈的端部与所述金属基底最内圈的端部固定连接在一起,所述通气腔体的最内圈的一侧上和最外圈的同一侧上均设有进气口,所述通气腔体的内表面上设有多个出气孔,所述石英管套设在所述通气腔体外,包覆住整个所述通气腔体。The technical scheme of the utility model for solving the above-mentioned technical problems is as follows: a device for growing graphene in a large area, including a quartz tube, a ventilation cavity, and a metal base, the inside of the ventilation cavity is hollow, and the ventilation cavity is a spiral column structure, the shape of the metal base matches the shape of the ventilation cavity, the metal base is spirally curled along the inner surface of the ventilation cavity, and the innermost end of the ventilation cavity is connected to the metal base The ends of the innermost ring are fixedly connected together, the air inlet is provided on the same side of the innermost ring and the outermost ring of the ventilation cavity, and the inner surface of the ventilation cavity is provided with A plurality of air outlets, the quartz tube is sheathed outside the ventilation cavity, covering the entire ventilation cavity.
本实用新型的有益效果是:结构简单,有利于大面积卷式生长石墨烯,节省空间,同时石墨烯生长均匀、提高产量。The beneficial effect of the utility model is that the structure is simple, it is beneficial to grow graphene in a large-area roll, saves space, and at the same time, the graphene grows uniformly and increases the output.
在上述技术方案的基础上,本实用新型还可以做如下改进。On the basis of the above technical solutions, the utility model can also be improved as follows.
进一步,所述出气孔均匀分布在所述通气腔体的内表面上,所述出气孔为通孔。Further, the air outlet holes are evenly distributed on the inner surface of the ventilation cavity, and the air outlet holes are through holes.
采用上述进一步方案的有益效果是:出气孔成阵列式均匀分布,使得反应气体可以出气均匀,使得金属基底表面形成均匀的气体环境,有利于石墨烯均匀生长。The beneficial effect of adopting the above further solution is: the vent holes are evenly distributed in an array, so that the reaction gas can be vented evenly, so that a uniform gas environment is formed on the surface of the metal substrate, which is conducive to the uniform growth of graphene.
进一步,所述通气腔体每一圈之间的间隔大于等于1mm。Further, the interval between each circle of the ventilation cavity is greater than or equal to 1 mm.
采用上述进一步方案的有益效果是:适当的距离有利于放置金属基底,使得金属基底上充分生长石墨烯。The beneficial effect of adopting the above further solution is that an appropriate distance is beneficial to place the metal substrate, so that the graphene can be fully grown on the metal substrate.
进一步,所述通气腔体内表面与外表面之间的距离为1~2mm。Further, the distance between the inner surface and the outer surface of the ventilation cavity is 1-2 mm.
采用上述进一步方案的有益效果是:通气腔体采用恰当的厚度,为金属基底提供适宜石墨烯生长的气体环境,有利于石墨烯的快速均与生长。The beneficial effect of adopting the above-mentioned further solution is that: the ventilation cavity adopts an appropriate thickness to provide a gas environment suitable for the growth of graphene for the metal substrate, which is conducive to the rapid uniformity and growth of graphene.
进一步,所述石英管的内径大于所述通气腔体最外圈的外径0.1~50mm。Further, the inner diameter of the quartz tube is 0.1-50 mm larger than the outer diameter of the outermost ring of the ventilation cavity.
采用上述进一步方案的有益效果是:石英管的内径略大于通气腔体最外圈的外径,使得通气腔体能放入石英管内,同时与石英管之间留有较小间隙。The beneficial effect of adopting the above further solution is that the inner diameter of the quartz tube is slightly larger than the outer diameter of the outermost ring of the venting cavity, so that the venting cavity can be placed in the quartz tube, while leaving a small gap between the quartz tube and the venting cavity.
进一步,所述通气腔体的轴向长度大于所述金属基底的轴向长度。Further, the axial length of the ventilation cavity is greater than the axial length of the metal base.
采用上述进一步方案的有益效果是:使得通气腔体可以完全覆盖住金属基底,有利于石墨烯生长。The beneficial effect of adopting the above further solution is that the ventilation cavity can completely cover the metal substrate, which is beneficial to the growth of graphene.
进一步,所述通气腔体由石英或者刚玉制成。Further, the ventilation cavity is made of quartz or corundum.
采用上述进一步方案的有益效果是:石英或刚玉耐高温,保证石墨烯在高温环境中生长不会造成装置变形和损坏,沿着装置的使用寿命。The beneficial effect of adopting the above further solution is: quartz or corundum can withstand high temperature, ensuring that the growth of graphene in a high temperature environment will not cause deformation and damage to the device, and extend the service life of the device.
附图说明Description of drawings
图1为本实用新型一种大面积生长石墨烯的装置取下石英管的结构示意图;Fig. 1 is the structural representation that a kind of large-area growth graphene device of the utility model takes off the quartz tube;
图2为本实用新型一种大面积生长石墨烯的装置的横截面示意图。Fig. 2 is a schematic cross-sectional view of a device for growing graphene in a large area of the present invention.
附图中,各标号所代表的部件列表如下:In the accompanying drawings, the list of parts represented by each label is as follows:
1、通气腔体,2、出气孔,3、进气口,4、金属基底,5、石英管。1. Ventilation cavity, 2. Air outlet, 3. Air inlet, 4. Metal base, 5. Quartz tube.
具体实施方式Detailed ways
以下结合附图对本实用新型的原理和特征进行描述,所举实例只用于解释本实用新型,并非用于限定本实用新型的范围。The principles and features of the present utility model are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the utility model, and are not used to limit the scope of the utility model.
如图1所示、图2所示,本实用新型用于卷式石墨的生长,包括石英管5、通气腔体1、金属基底4。所述通气腔体1由石英或者刚玉制成,所述通气腔体1内部中空,所述通气腔体1为螺旋式柱状结构,即通气腔体1一端固定,另一端以预定的距离进行循环卷绕,循环卷绕成多圈,每相邻两圈之间的间隔相等。所述通气腔体1内表面与外表面之间的距离为1~2mm,即通气腔体1的厚度为1~2mm,所述通气腔体1每一圈之间的间隔大于等于1mm,即相邻两圈之间的间隔大于等于1mm。对于催化基底或者金属基底4厚度较大的,根据具体情况适当增加通气腔体1每相邻两圈之间的间隔。如金属基底4厚度小于1mm时,通气腔体1相邻两圈之间的间隔大于等于1mm;如金属基底4厚度大于1mm时,通气腔体1相邻两圈之间的最小间隔要适当增大。金属基底4用来支撑和分离石墨烯,所述金属基底4的形状与所述通气腔体1的形状相匹配,所述金属基底4沿着所述通气腔体1内表面螺旋卷曲,即金属基底4位于通气腔体1相邻两圈之间。As shown in FIG. 1 and FIG. 2 , the utility model is used for the growth of rolled graphite, and includes a quartz tube 5 , a ventilation cavity 1 , and a metal substrate 4 . The ventilation cavity 1 is made of quartz or corundum, the interior of the ventilation cavity 1 is hollow, and the ventilation cavity 1 is a spiral columnar structure, that is, one end of the ventilation cavity 1 is fixed, and the other end circulates at a predetermined distance Winding, circular winding into multiple turns, the interval between every two adjacent turns is equal. The distance between the inner surface and the outer surface of the ventilation cavity 1 is 1-2 mm, that is, the thickness of the ventilation cavity 1 is 1-2 mm, and the interval between each circle of the ventilation cavity 1 is greater than or equal to 1 mm, that is, The interval between two adjacent circles is greater than or equal to 1mm. For the thicker catalytic substrate or metal substrate 4 , the interval between every two adjacent turns of the ventilation chamber 1 should be appropriately increased according to specific conditions. If the thickness of the metal base 4 is less than 1 mm, the distance between two adjacent circles of the ventilation chamber 1 is greater than or equal to 1 mm; if the thickness of the metal base 4 is greater than 1 mm, the minimum distance between two adjacent circles of the ventilation chamber 1 should be appropriately increased. big. The metal base 4 is used to support and separate graphene, the shape of the metal base 4 matches the shape of the ventilation cavity 1, and the metal base 4 is spirally curled along the inner surface of the ventilation cavity 1, that is, metal The base 4 is located between two adjacent turns of the ventilation chamber 1 .
如图1、图2所示,通气腔体1的轴向长度大于所述金属基底4的轴向长度,即通气腔体1的宽度宽于金属基底4的宽度,从而使得金属基底4完全位于通气腔体1相邻两圈之间,充分均匀的与气体接触。所述通气腔体1最内圈的端部与所述金属基底4最内圈的端部固定连接在一起。所述通气腔体1的最内圈的一侧和最外圈的同一侧上均设有进气口3,气体由进气口3输入。所述通气腔体1的内表面上设有多个出气孔2,所述出气孔2均匀分布在所述通气腔体1的内表面上,出气孔2可采用阵列式均匀分布,所述出气孔2为通孔。气体从出气孔2中均匀排出,使得金属基底4在均匀的气体环境中生长石墨烯。克服了目前卷式生长中层间气体分布控制困难,气体分布不均匀的缺点。石英管5为空心的圆柱体形装,所述石英管5套设在所述通气腔体1外,包覆住整个所述通气腔体1,所述石英管5的内径大于所述通气腔体1最外圈的外径0.1~50mm,所述通气腔体1最外圈的外径大于50mm。石英管5的内径略大于通气腔体1最外圈的外径,使得通气腔体1可以放入到石英管5中进行生长反应。As shown in Figures 1 and 2, the axial length of the ventilation cavity 1 is greater than the axial length of the metal base 4, that is, the width of the ventilation cavity 1 is wider than the width of the metal base 4, so that the metal base 4 is completely located Between two adjacent circles of the ventilation chamber 1 , it is fully and evenly in contact with the gas. The innermost end of the ventilation cavity 1 is fixedly connected with the innermost end of the metal base 4 . An air inlet 3 is provided on one side of the innermost circle and the same side of the outermost circle of the ventilation cavity 1 , and gas is input through the air inlet 3 . The inner surface of the ventilation cavity 1 is provided with a plurality of air outlet holes 2, the air outlet holes 2 are evenly distributed on the inner surface of the ventilation cavity 1, the air outlet holes 2 can be evenly distributed in an array, and the air outlet holes The air hole 2 is a through hole. The gas is evenly discharged from the gas outlet 2, so that the metal substrate 4 grows graphene in a uniform gas environment. It overcomes the shortcomings of difficult gas distribution control and uneven gas distribution in the current roll growth. The quartz tube 5 is a hollow cylinder, and the quartz tube 5 is sleeved outside the ventilation cavity 1 to cover the entire ventilation cavity 1. The inner diameter of the quartz tube 5 is larger than that of the ventilation cavity 1. The outer diameter of the outermost ring is 0.1-50 mm, and the outer diameter of the outermost ring of the ventilation cavity 1 is larger than 50 mm. The inner diameter of the quartz tube 5 is slightly larger than the outer diameter of the outermost circle of the ventilation cavity 1, so that the ventilation cavity 1 can be put into the quartz tube 5 for growth reaction.
使用时,由进气口3通入气体,气体进入到通气腔体1中,再由通气腔体1内表面上的出气孔2出气,金属基底4与出气孔2出来的气体充分均与接触,使得金属基底4处于均与的气体环境中,有利于石墨烯的均匀生长,生长效率高。When in use, the gas is introduced from the air inlet 3, the gas enters the ventilation cavity 1, and then the gas is released from the gas outlet 2 on the inner surface of the ventilation cavity 1, and the gas coming out of the metal base 4 and the gas outlet 2 is fully in contact with each other. , so that the metal base 4 is in a uniform gas environment, which is beneficial to the uniform growth of graphene, and the growth efficiency is high.
该装置的通气腔体1和金属基底4卷曲的圈数根据石英管5的内径确定,同时也要保证金属基底4最内圈造成不可回复形变。该装置的结构简单,对现有工艺过程改动很小,有利于在现有工艺中进行石墨烯的生产制造,可重复利用,生产出的石墨烯无大面积的褶皱。利用该装置生长石墨烯时,金属箔在升降温过程中有周期性局部形变褶皱的特点,可以作为后续片材剪切的位置,单元片材没有明显褶皱。而且在每圈金属基底4表面进气均匀,改善了目前卷式生长层间进气不均匀的缺点,该装置可以生产出高质量的石墨烯薄膜。与现有平面生长片材宽度D(D石英管5的直径)相比,长度增加为nπD,n为卷材圈数,D为单圈直径,大大增加了生产效率,节省了生产成本。The number of coils of the ventilation cavity 1 and the metal base 4 of the device is determined according to the inner diameter of the quartz tube 5 , and it is also necessary to ensure that the innermost ring of the metal base 4 causes irreversible deformation. The structure of the device is simple, little modification is made to the existing process, which is beneficial to the production and manufacture of graphene in the existing process, can be reused, and the produced graphene has no large-area wrinkles. When using this device to grow graphene, the metal foil has the characteristics of periodic local deformation and wrinkles during the heating and cooling process, which can be used as the position for subsequent sheet shearing, and the unit sheet has no obvious wrinkles. Moreover, the air intake is uniform on the surface of the metal substrate 4 in each circle, which improves the current shortcoming of uneven air intake between roll growth layers, and the device can produce high-quality graphene films. Compared with the width D of the existing planar growth sheet (D is the diameter of the quartz tube 5), the length is increased to nπD, where n is the number of turns of the coil and D is the diameter of a single turn, which greatly increases the production efficiency and saves the production cost.
实施例一:Embodiment one:
石英管5的内径为100mm时,石英管5管壁的厚度为2mm;采用的通气腔体1最外圈的外径为80mm,圈数为4圈,通气腔体1的厚度为2mm,通气腔体1相邻两圈之间的间距为1mm;金属基底4采用宽度30cm的铜箔,通气腔体1的宽度采用32cm。将宽为30cm,长为56cm的铜箔卷入通气腔体1内,卷入方式可采用与通气腔体1厚度相当的软板铺在铜箔下面,将铜箔包裹成卷状,然后将铜箔导入通气腔体1中。将包裹着铜箔的通气腔体1放置于石英管5的恒温区域,然后进行化学气相沉积石墨烯薄膜。When the internal diameter of quartz tube 5 was 100mm, the thickness of quartz tube 5 tube wall was 2mm; The distance between two adjacent circles of the cavity 1 is 1 mm; the metal base 4 is made of copper foil with a width of 30 cm, and the width of the ventilation cavity 1 is 32 cm. Roll the copper foil with a width of 30cm and a length of 56cm into the ventilation cavity 1. The way of rolling can be to use a soft board with the same thickness as the ventilation cavity 1 to lay under the copper foil, wrap the copper foil into a roll, and then The copper foil is introduced into the ventilation cavity 1 . The ventilation cavity 1 wrapped with copper foil is placed in the constant temperature area of the quartz tube 5, and then the graphene film is deposited by chemical vapor phase.
以上所述仅为本实用新型的较佳实施例,并不用以限制本实用新型,凡在本实用新型的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本实用新型的保护范围之内。The above descriptions are only preferred embodiments of the present utility model, and are not intended to limit the present utility model. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present utility model shall be included in this utility model. within the scope of protection of utility models.
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420786714.5U CN204325492U (en) | 2014-12-12 | 2014-12-12 | A kind of device of large area deposition Graphene |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420786714.5U CN204325492U (en) | 2014-12-12 | 2014-12-12 | A kind of device of large area deposition Graphene |
Publications (1)
Publication Number | Publication Date |
---|---|
CN204325492U true CN204325492U (en) | 2015-05-13 |
Family
ID=53161869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201420786714.5U Expired - Fee Related CN204325492U (en) | 2014-12-12 | 2014-12-12 | A kind of device of large area deposition Graphene |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN204325492U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104480451A (en) * | 2014-12-12 | 2015-04-01 | 重庆墨希科技有限公司 | Device for growing graphene in large areas |
-
2014
- 2014-12-12 CN CN201420786714.5U patent/CN204325492U/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104480451A (en) * | 2014-12-12 | 2015-04-01 | 重庆墨希科技有限公司 | Device for growing graphene in large areas |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8580132B2 (en) | Method for making strip shaped graphene layer | |
US9067795B2 (en) | Method for making graphene composite structure | |
CN102229426B (en) | Preparation method of equiangular hexagonal graphene arranged in single layer sequentially | |
CN104036878B (en) | A kind of preparation method of graphene and CNT three-dimensional structure material | |
US20130264193A1 (en) | Method for making strip shaped graphene layer | |
CN108545966A (en) | A kind of Graphene glass fiber and preparation method thereof | |
CN103253647B (en) | Preparation method for directly growing high density carbon nanotube array on carbon fiber paper base bottom | |
WO2014038752A1 (en) | Method for manufacturing graphene layer | |
CN105439114B (en) | Carbon-fiber film and preparation method thereof | |
CN104480451B (en) | Device for growing graphene in large areas | |
CN102642827A (en) | Method for preparing graphene pipe and graphene band | |
KR20130050167A (en) | A method for manufacturing graphene quantum dot and graphene quantum dot manufactured by the same | |
US20150361589A1 (en) | Method for making carbon nanotube composite wire | |
CN105220214B (en) | A kind of preparation method of graphene film | |
CN107604338B (en) | The method of large area bilayer graphene film is prepared on an insulating substrate | |
CN103332675B (en) | Based on the method for graphene quantum dot chemical vapour deposition synthesizing carbon nanotubes | |
CN204325492U (en) | A kind of device of large area deposition Graphene | |
CN104944404A (en) | Nano-tube film | |
CN108439382B (en) | A method and device for preparing graphene by controllable liquid carbon source chemical vapor deposition | |
CN103738939B (en) | A kind of method that Graphene is peeled off fast | |
Tang et al. | Preparation of Few Layer Three‐dimensional Graphene Networks by CVD for Energy Storage Applications | |
CN104947073A (en) | Preparation method of nanotube film | |
US20130264748A1 (en) | Method for making strip shaped graphene layer | |
JP6091336B2 (en) | Method for producing carbon nanotube | |
CN108423659A (en) | A kind of preparation method of the grade single layer single crystal graphene based on polycrystalline copper foil |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150513 |
|
CF01 | Termination of patent right due to non-payment of annual fee |