CN104480451B - Device for growing graphene in large areas - Google Patents

Abstract

The invention relates to the technical field of graphene growth equipment, in particular to a device for growing graphene in a large area. It includes a quartz tube, a venting cavity, and a metal base. The venting cavity is hollow inside, and the venting cavity is a spiral columnar structure. The shape of the metal base matches the shape of the venting cavity. The metal The base is spirally curled along the inner surface of the ventilation cavity, the end of the innermost circle of the ventilation cavity is fixedly connected with the end of the innermost circle of the metal base, and one of the innermost circles of the ventilation cavity Air inlets are provided on the same side of the side and the outermost ring, and a plurality of air outlet holes are provided on the inner surface of the ventilation cavity, and the quartz tube is sleeved outside the ventilation cavity to cover the entire the ventilation cavity. The beneficial effects of the invention are: simple structure, favorable for large-area rolling growth of graphene, space saving, uniform growth of graphene, and increased output.

Description

A device for growing graphene in a large area

technical field

The invention relates to the technical field of graphene growth equipment, in particular to a device for growing graphene in a large area.

Background technique

Graphene is a hexagonal honeycomb structure composed of carbon atoms based on sp2 hybridization, a two-dimensional crystal with a thickness of only one atomic layer. In 2004, Andre Geim, Konstantin Novoselov and others discovered stable single-layer graphene, and also won the 2010 Nobel Prize in Physics for their pioneering work on graphene. In recent years, graphene has shown many exciting properties and potential application prospects in the fields of microelectronics, quantum physics, materials, chemistry, etc., and has attracted extensive attention from the scientific and industrial circles. Graphene has excellent mechanical, thermal, optical, electrical and other properties. The electron mobility of graphene at room temperature exceeds 15000cm2/V·s, surpassing carbon nanotubes and silicon crystals, while the resistivity is only about 10 ^-6 Ω·cm, lower than that of copper or silver, which is currently the smallest resistivity in the world Material. And its full-band light transmittance as high as 97.7% is unmatched by other conductive materials. At present, the chemical vapor deposition (CVD) method of metal substrates is usually used in the industry to prepare graphene. However, there are still technical difficulties in the growth of large-scale graphene, and there is a lack of a growth device for large-scale growth of graphene.

Contents of the invention

The technical problem to be solved by the present invention is to provide a device for growing graphene in a large area, which overcomes the defects of uneven gas distribution, small preparation amount and low production capacity of graphite in traditional growth devices.

The technical solution of the present invention to solve the above-mentioned technical problems is as follows: a device for growing graphene in a large area, including a quartz tube, a ventilation cavity, and a metal substrate, the inside of the ventilation cavity is hollow, and the ventilation cavity is a spiral columnar structure , the shape of the metal base matches the shape of the vent cavity, the metal base is spirally curled along the inner surface of the vent cavity, and the end of the innermost ring of the vent cavity is closest to the metal base The ends of the inner ring are fixedly connected together, and the side of the innermost ring of the ventilation cavity and the same side of the outermost ring are provided with air inlets, and the inner surface of the ventilation cavity is provided with multiple There are two air outlet holes, and the quartz tube is sleeved outside the vent cavity to cover the entire vent cavity.

The beneficial effect of the invention is that the structure is simple, it is beneficial to grow graphene in a large-area roll, saves space, and at the same time, the graphene grows uniformly and increases the yield.

On the basis of the above technical solutions, the present invention can also be improved as follows.

Further, the air outlet holes are evenly distributed on the inner surface of the ventilation cavity, and the air outlet holes are through holes.

The beneficial effect of adopting the above further solution is: the vent holes are evenly distributed in an array, so that the reaction gas can be vented evenly, so that a uniform gas environment is formed on the surface of the metal substrate, which is conducive to the uniform growth of graphene.

Further, the interval between each circle of the ventilation cavity is greater than or equal to 1mm.

The beneficial effect of adopting the above further solution is that an appropriate distance is beneficial to place the metal substrate, so that the graphene can be fully grown on the metal substrate.

Further, the distance between the inner surface and the outer surface of the ventilation cavity is 1-2mm.

The beneficial effect of adopting the above-mentioned further solution is that: the ventilation cavity adopts an appropriate thickness to provide a gas environment suitable for the growth of graphene for the metal substrate, which is conducive to the rapid uniformity and growth of graphene.

Further, the inner diameter of the quartz tube is 0.1-50 mm larger than the outer diameter of the outermost ring of the ventilation cavity.

The beneficial effect of adopting the above further solution is that the inner diameter of the quartz tube is slightly larger than the outer diameter of the outermost ring of the venting cavity, so that the venting cavity can be placed in the quartz tube, while leaving a small gap between the quartz tube and the venting cavity.

Further, the axial length of the ventilation cavity is greater than the axial length of the metal base.

The beneficial effect of adopting the above further solution is that the ventilation cavity can completely cover the metal substrate, which is beneficial to the growth of graphene.

Further, the ventilation cavity is made of quartz or corundum.

The beneficial effect of adopting the above further solution is: quartz or corundum can withstand high temperature, ensuring that the growth of graphene in a high temperature environment will not cause deformation and damage to the device, and extend the service life of the device.

Description of drawings

Fig. 1 is the structural representation that the device of a kind of large-area growth graphene of the present invention takes off quartz tube;

Fig. 2 is a schematic cross-sectional view of a device for growing graphene in a large area according to the present invention.

In the accompanying drawings, the list of parts represented by each label is as follows:

1. Ventilation cavity, 2. Air outlet, 3. Air inlet, 4. Metal base, 5. Quartz tube.

detailed description

The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

As shown in FIG. 1 and FIG. 2 , the present invention is used for the growth of rolled graphite, including a quartz tube 5 , a ventilation chamber 1 , and a metal substrate 4 . The ventilation cavity 1 is made of quartz or corundum, the interior of the ventilation cavity 1 is hollow, and the ventilation cavity 1 is a spiral columnar structure, that is, one end of the ventilation cavity 1 is fixed, and the other end circulates at a predetermined distance Winding, circular winding into multiple turns, the interval between every two adjacent turns is equal. The distance between the inner surface and the outer surface of the ventilation cavity 1 is 1-2 mm, that is, the thickness of the ventilation cavity 1 is 1-2 mm, and the interval between each circle of the ventilation cavity 1 is greater than or equal to 1 mm, that is, The interval between two adjacent circles is greater than or equal to 1mm. For the thicker catalytic substrate or metal substrate 4 , the interval between every two adjacent turns of the ventilation chamber 1 should be appropriately increased according to specific conditions. If the thickness of the metal base 4 is less than 1 mm, the distance between two adjacent circles of the ventilation chamber 1 is greater than or equal to 1 mm; if the thickness of the metal base 4 is greater than 1 mm, the minimum distance between two adjacent circles of the ventilation chamber 1 should be appropriately increased. Big. The metal base 4 is used to support and separate graphene, the shape of the metal base 4 matches the shape of the ventilation cavity 1, and the metal base 4 is spirally curled along the inner surface of the ventilation cavity 1, that is, metal The base 4 is located between two adjacent turns of the ventilation cavity 1 .

As shown in Figures 1 and 2, the axial length of the ventilation cavity 1 is greater than the axial length of the metal base 4, that is, the width of the ventilation cavity 1 is wider than the width of the metal base 4, so that the metal base 4 is completely located Between two adjacent circles of the ventilation chamber 1 , it is fully and evenly in contact with the gas. The innermost end of the ventilation cavity 1 is fixedly connected with the innermost end of the metal base 4 . An air inlet 3 is provided on one side of the innermost circle and the same side of the outermost circle of the ventilation cavity 1 , and gas is input through the air inlet 3 . The inner surface of the ventilation cavity 1 is provided with a plurality of air outlet holes 2, the air outlet holes 2 are evenly distributed on the inner surface of the ventilation cavity 1, the air outlet holes 2 can be evenly distributed in an array, and the air outlet holes The air hole 2 is a through hole. The gas is evenly discharged from the gas outlet 2, so that the metal substrate 4 grows graphene in a uniform gas environment. It overcomes the shortcomings of difficult gas distribution control and uneven gas distribution in the current roll growth. The quartz tube 5 is a hollow cylinder, and the quartz tube 5 is sleeved outside the ventilation cavity 1 to cover the entire ventilation cavity 1. The inner diameter of the quartz tube 5 is larger than that of the ventilation cavity 1. The outer diameter of the outermost ring is 0.1-50 mm, and the outer diameter of the outermost ring of the ventilation cavity 1 is larger than 50 mm. The inner diameter of the quartz tube 5 is slightly larger than the outer diameter of the outermost circle of the ventilation cavity 1, so that the ventilation cavity 1 can be put into the quartz tube 5 for growth reaction.

When in use, the gas is introduced from the air inlet 3, the gas enters the ventilation cavity 1, and then the gas is released from the gas outlet 2 on the inner surface of the ventilation cavity 1, and the gas coming out of the metal base 4 and the gas outlet 2 is fully in contact with each other. , so that the metal base 4 is in a uniform gas environment, which is beneficial to the uniform growth of graphene, and the growth efficiency is high.

The number of coils of the ventilation cavity 1 and the metal base 4 of the device is determined according to the inner diameter of the quartz tube 5 , and it is also necessary to ensure that the innermost ring of the metal base 4 causes irreversible deformation. The structure of the device is simple, little modification is made to the existing process, which is beneficial to the production and manufacture of graphene in the existing process, can be reused, and the produced graphene has no large-area wrinkles. When using this device to grow graphene, the metal foil has the characteristics of periodic local deformation and wrinkles during the heating and cooling process, which can be used as the position for subsequent sheet shearing, and the unit sheet has no obvious wrinkles. Moreover, the air intake is uniform on the surface of the metal substrate 4 in each circle, which improves the current shortcoming of uneven air intake between roll growth layers, and the device can produce high-quality graphene films. Compared with the width D of the existing planar growth sheet (D is the diameter of the quartz tube 5), the length is increased to nπD, where n is the number of turns of the coil and D is the diameter of a single turn, which greatly increases the production efficiency and saves the production cost.

Embodiment one:

When the internal diameter of quartz tube 5 was 100mm, the thickness of quartz tube 5 tube wall was 2mm; The distance between two adjacent circles of the cavity 1 is 1 mm; the metal base 4 is made of copper foil with a width of 30 cm, and the width of the ventilation cavity 1 is 32 cm. Roll the copper foil with a width of 30cm and a length of 56cm into the ventilation cavity 1. The way of rolling can be to use a soft board with the same thickness as the ventilation cavity 1 to lay under the copper foil, wrap the copper foil into a roll, and then The copper foil is introduced into the ventilation cavity 1 . The ventilation cavity 1 wrapped with copper foil is placed in the constant temperature area of the quartz tube 5, and then the graphene film is deposited by chemical vapor phase.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection of the present invention. within range.

Claims (5)

1. a device for growing graphene on a large scale, is characterized in that, comprises quartz tube (5), ventilation cavity (1), metal substrate (4), and described ventilation cavity (1) interior is hollow, and described ventilation The cavity (1) is a spiral columnar structure, the shape of the metal base (4) matches the shape of the ventilation cavity (1), and the metal base (4) follows the ventilation cavity (1) ), the inner surface of the ventilation cavity (1) is helically curled, the end of the innermost circle of the ventilation cavity (1) is fixedly connected with the end of the innermost circle of the metal base (4), and the innermost of the ventilation cavity (1) One side of the circle and the same side of the outermost circle are provided with an air inlet (3), and the inner surface of the ventilation cavity (1) is provided with a plurality of air outlet holes (2), and the quartz tube (5 ) is sleeved outside the ventilation cavity (1) to cover the entire ventilation cavity (1); the air outlet holes (2) are evenly distributed on the inner surface of the ventilation cavity (1), The air outlet hole (2) is a through hole; the interval between each circle of the ventilation cavity (1) is greater than or equal to 1mm. 2. The device for growing graphene in a large area according to claim 1, characterized in that the distance between the inner surface and the outer surface of the ventilation cavity (1) is 1-2 mm. 3. The device for growing graphene in a large area according to claim 1, characterized in that, the inner diameter of the quartz tube (5) is 0.1 to 50 mm greater than the outer diameter of the outermost ring of the ventilation cavity (1) . 4. The device for growing graphene in a large area according to claim 1, characterized in that the axial length of the ventilation cavity (1) is greater than the axial length of the metal base (4). 5. The device for growing graphene in a large area according to any one of claims 1 to 4, characterized in that, the ventilation cavity (1) is made of quartz or corundum.