CN204118038U - High power transistor die Bonder - Google Patents
High power transistor die Bonder Download PDFInfo
- Publication number
- CN204118038U CN204118038U CN201420541676.7U CN201420541676U CN204118038U CN 204118038 U CN204118038 U CN 204118038U CN 201420541676 U CN201420541676 U CN 201420541676U CN 204118038 U CN204118038 U CN 204118038U
- Authority
- CN
- China
- Prior art keywords
- track
- heating
- material loading
- blanking
- cover plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 48
- 125000006850 spacer group Chemical group 0.000 claims abstract description 19
- 241000397426 Centroberyx lineatus Species 0.000 claims abstract description 5
- 238000005304 joining Methods 0.000 claims abstract description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 40
- 229910052802 copper Inorganic materials 0.000 claims description 40
- 239000010949 copper Substances 0.000 claims description 40
- 238000003466 welding Methods 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 5
- 239000010425 asbestos Substances 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 3
- 229910052895 riebeckite Inorganic materials 0.000 claims description 3
- 230000002459 sustained effect Effects 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000012802 pre-warming Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Die Bonding (AREA)
Abstract
The utility model relates to a kind of high power transistor die Bonder, belongs to transistor metal encapsulation technology field.It comprises material loading track, pre-hot orbit, heating track and blanking track, pre-hot orbit and heating track are positioned at base spacer, the both sides of pre-hot orbit and heating track are provided with the side dividing plate on fixing base spacer, material loading track and blanking track lay respectively at base spacer rear and front end, dividing plate upper end, side fixed cover plate, upper cover plate bottom joining rails cover plate, the delivery track length of the base that track cover plate length is less than material loading track, pre-hot orbit, heating track and blanking track are formed.Swallow tail shaped slot is provided with in the middle part of pre-hot orbit and heating track.The high power transistor die Bonder of the suitable metal encapsulation that the utility model seal protection performance is good all reaches the effect of actual use, realizes heating soon, air-tightness is good, lightly flexibly, cost is low, efficiency is high, meet the bonding die requirement of the high power transistor of metallic packaging completely.
Description
Technical field
The utility model relates to a kind of high power transistor die Bonder, belongs to transistor metal encapsulation technology field.
Background technology
The high power transistor of metallic packaging belongs to semiconductor power transistor category, has a wide range of applications in national economy every profession and trades such as generator, sound equipment, Switching Power Supply, instrument and meter, industrial equipments.Domestic metallic packaging high power valve in the fabrication process, owing to being subject to basic material, equipment precision, technical matters level, manufacturing cost, the restriction of the many factors such as personnel's level of skill, domestic equipment manufacturer, once full-automatic high-power transistor die Bonder was designed and developed, but all can only take solder pasting processes bonding die, finally heat sintering method, but chip surface rosin so usually can be caused to stain, chip after staining easily produces rosin joint, and increase cleaning, operation is loaded down with trivial details, and soldering paste is a kind of low-temperature sintering mode, certain impact is caused on the high-power crystal reliability of metallic packaging.
Usually; the power transistor of metallic packaging; need single base; heated by die Bonder, under the condition of hydrogen and nitrogen protection; by chips welding on metal base; then aluminium wire ultrasonic bonding technique is adopted to be coupled together by the leading foot of the emitter of tube core, base stage and base, the upper pipe cap of finally sealed welding.According to Principles of Transistors, the most important bonding die technique of power transistor of metallic packaging, must guarantee that chip back is without cavity, solder wettability is good, allows between chip and base and forms good ohmic contact, open is oxidized, without cavity below chip, seamless, without defects such as fins, such parameter such as second breakdown, saturation voltage drop, thermal resistance guaranteeing high power transistor, not by technogenic influence, guarantees the reliability of the high power transistor of metallic packaging.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned weak point, thus provides a kind of practicality, the high power transistor die Bonder being applicable to metallic packaging that light and handy, seal protection performance is good.
According to the technical scheme that the utility model provides, high power transistor die Bonder comprises material loading track, pre-hot orbit, heating track and blanking track, be positioned at the material loading track on same level straight line, pre-hot orbit, heating track and blanking track are in turn connected to form the delivery track of base, it is characterized in that: pre-hot orbit and heating track are positioned at base spacer, the both sides of pre-hot orbit and heating track are provided with the side dividing plate on fixing base spacer, material loading track and blanking track lay respectively at base spacer rear and front end, material loading rail base is provided with material loading pedestal, blanking rail base is provided with blanking pedestal, material loading pedestal and blanking pedestal make material loading track, pre-hot orbit, the delivery track of the base that heating track and blanking track are formed keeps sustained height, dividing plate upper end, side fixed cover plate, upper cover plate bottom joining rails cover plate, the delivery track length of the base that track cover plate length is less than material loading track, pre-hot orbit, heating track and blanking track are formed, swallow tail shaped slot is provided with in the middle part of described pre-hot orbit and heating track, be provided with welding hole in the middle part of upper cover plate and track cover plate, above welding hole, be provided with the 3rd copper pipe, described pre-hot orbit is provided with two the first heating rod holes, the first heating rod of material loading pedestal is inserted through in first heating rod hole, pre-hot orbit is provided with the first thermocouple hole, the first thermocouple of material loading pedestal is inserted through in first thermocouple hole, pre-hot orbit is provided with the first venthole that the first copper pipe hole is communicated with the first copper pipe hole with several, inserts the first copper pipe in the first copper pipe hole, described heating track is provided with two the second heating rod holes, the second heating rod of blanking pedestal is inserted through in second heating rod hole, heating track is provided with the second thermocouple hole, the second thermocouple of blanking pedestal is inserted through in second thermocouple hole, heating track is provided with the second venthole that the second copper pipe hole is communicated with the second copper pipe hole with several, inserts the second copper pipe in the second copper pipe hole.
Further, common connecting bottom board bottom material loading pedestal, blanking pedestal and base spacer, base plate bottom connects pedestal by two floor bracket.
Further, upper cover plate, side dividing plate and base spacer all adopt asbestos cement material to make.
Further, heating track afterbody is provided with heat insulation mouth.
Compared with the prior art the utility model has the following advantages:
1. whole equipment volume is little, lightly, directly can be placed on normal operations platform and work, and operator easily can be seated and just can complete, and cost is low;
The thermal treatment zone of 2 equipment is divided into low-temperature prewarming district and high-temperature heating district, allows base shift to an earlier date preheating like this in track, can operate immediately to during high-temperature soldering, and firing rate is very fast, and do not affect employee's service speed, efficiency is higher;
The sealing property of 3 whole equipment very good: track cover plate is designed to
shape, and Track desigh becomes
shape, such track cover plate and track reach well airtight to be agreed with, and has both solved the air-tightness problem of track, can prevent an overlapping card problem when ejector sleeve seat again to base is spacing;
4 tracks adopt the method for designing of swallow-tail form, even if solve, pin is a little bending also can successfully be passed through from track, and need not open cover plate and do over again, the service speed so neither affecting employee does not worry that base and solder can be oxidized yet.
5 gas mode of movements cleverly: have employed copper pipe and to punch in track protection; welding hole place increases a dedicated copper tube; guarantee base and solder protection fully; not oxidized; base and chip form good ohmic contact layer, guarantee the high power transistor thermal resistance parameters of metallic packaging, second breakdown parameter, saturation voltage drop parameter not by the impact of technique.
Accompanying drawing explanation
Fig. 1 is the utility model exploded view.
Fig. 2 is the utility model front view.
Fig. 3 is preheating track structure schematic diagram.
Fig. 4 is heating track structural representation.
Description of reference numerals: 1-upper cover plate, 2-track cover plate, 3-material loading track, 4-material loading pedestal, the pre-hot orbit of 5-, 6-heating track, 7-blanking track, 8-blanking pedestal, 9-side dividing plate, 10-base spacer, 11-base plate, 12-floor bracket, 13-pedestal, 14-swallow tail shaped slot, 15-welding hole, 16-first heating rod hole, 17-first thermocouple hole, 18-first copper pipe hole, 19-first venthole, 20-second heating rod hole, 21-second thermocouple hole, 22-second copper pipe hole, 23-second venthole, 24-first copper pipe, 25-second copper pipe, 26-the 3rd copper pipe, the heat insulation mouth of 27-.
Embodiment
Embodiment in is by reference to the accompanying drawings further described by the utility model below:
As shown in Fig. 1 ~ 2, the utility model mainly comprises material loading track 3, pre-hot orbit 5, heating track 6 and blanking track 7, is positioned at the material loading track 3 on same level straight line, in advance hot orbit 5, heating track 6 and blanking track 7 and is in turn connected to form the delivery track of base.Pre-hot orbit 5 and heating track 6 are positioned at base spacer 10, and the both sides of pre-hot orbit 5 and heating track 6 are provided with the side dividing plate 9 on fixing base spacer 10.Material loading track 3 and blanking track 7 lay respectively at base spacer 10 rear and front end, material loading pedestal 4 is provided with bottom material loading track 3, be provided with blanking pedestal 8 bottom blanking track 7, the delivery track of the base that material loading pedestal 4 and blanking pedestal 8 make material loading track 3, in advance hot orbit 5, heating track 6 and blanking track 7 be formed keeps sustained height.
Side dividing plate 9 upper end fixed cover plate 1, upper cover plate 1 bottom joining rails cover plate 2, the delivery track length of the base that track cover plate 2 length is less than material loading track 3, pre-hot orbit 5, heating track 6 and blanking track 7 are formed, so just stay feeding area and discharging area to track, make the base being in the thermal treatment zone on whole track all be covered by track cover plate 2 simultaneously.Track cover plate 2 is
shape, and delivery track is
shape, such track cover plate and delivery track reach well airtight to be agreed with, and has both solved the air-tightness problem of track, can prevent an overlapping card problem when ejector sleeve seat again to base is spacing.
Swallow tail shaped slot 14 is provided with in the middle part of described pre-hot orbit 5 and heating track 6, even if make, the pin of base is a little bending also can successfully be passed through from track, need not open upper cover plate to do over again, the service speed so neither affecting employee does not worry that base and solder can be oxidized yet.
Be provided with welding hole 15 in the middle part of upper cover plate 1 and track cover plate 2, above welding hole 15, be provided with the 3rd copper pipe 26.
As shown in Figure 3, described pre-hot orbit 5 is provided with two the first heating rod holes 16, the first heating rod of material loading pedestal 4 is inserted through in first heating rod hole 16, pre-hot orbit 5 is provided with the first thermocouple hole 17, the first thermocouple of material loading pedestal 4 is inserted through in first thermocouple hole 17, pre-hot orbit 5 is provided with the first copper pipe hole 18 and inserts the first copper pipe 24 with in several first venthole 19, first copper pipe holes 18 be communicated with the first copper pipe hole 18.
As shown in Figure 4, described heating track 6 is provided with two the second heating rod holes 20, the second heating rod of blanking pedestal 8 is inserted through in second heating rod hole 20, heating track 6 is provided with the second thermocouple hole 21, the second thermocouple of blanking pedestal 8 is inserted through in second thermocouple hole 21, heating track 6 is provided with the second copper pipe hole 22 and inserts the second copper pipe 25 with in several second venthole 23, second copper pipe holes 22 be communicated with the second copper pipe hole 22.Described heating track 6 afterbody is provided with heat insulation mouth 27, and base can be made to lower the temperature in time, prevents overheated unprotect gas to be oxidized.
First copper pipe 24,25-second copper pipe 25 and the 3rd copper pipe 26 for passing into hydrogen and nitrogen hybrid protection gas, thus protect the base in welding process, solder not oxidized.
Common connecting bottom board 11 bottom material loading pedestal 4, blanking pedestal 8 and base spacer 10, base plate 11 bottom connects pedestal 13 by two floor bracket 12.
Described upper cover plate 1, side dividing plate 9 and base spacer 10 all adopt asbestos cement material to make, and have function of heat insulation.
Described track cover plate 2 adopts stainless steel material to make.
The course of work of the present utility model and operation principle are: first heat pre-hot orbit and heating track by heating rod; set temperature is all raised to pre-hot orbit and heating track temperature by thermocouple monitoring; open the flowmeter of protective gas; make hydrogen, nitrogen hybrid protection gas enter the first copper pipe, the second copper pipe and the 3rd copper pipe, protective gas is filled with in track.Manually base is put into material loading track one by one, when entering welding hole, power transistor completes bonding die in this region exactly.During welding, operating personnel's left hand carries out material loading at material loading orbital region, solder clamped by right hand tweezers, solder is put in order in the bonding die district of base, then clamping chip is placed on chip in the middle of the solder of melting, and clamp chip grinding several times with tweezers, allow solder fully between chip and base, go into good ohmic contact.After completing one like this, left hand is again by increasing a base in material loading track, and base can move right under left hand thrust one when material loading, has continued the bonding die of second product, by that analogy.When the base gluing sheet is constantly automatically released in blanking track, and through the cooling of blanking track, solder firmly welds together chip and base automatically, walk abreast into good ohmic contact layer, finally adopt and manually from blanking track, the semi-finished product that bonding die is good are placed on special transmission plate.Described pre-hot orbit first improves a part by the temperature of base, then carries out bonding die in die Bonder high-temperature part, high temperature slicken solder can be allowed so fully to melt, and base can not be oxidized, reach the effect that wettability is good, and do not affect operating efficiency.
Under the protection of hydrogen and nitrogen hybrid protection gas; solder melt point temperature is heated to base; ensure base and solder not oxidized; and there is the situation that wettability is good; thus make base and chip form good ohmic contact layer, guarantee the high power transistor thermal resistance parameters of metallic packaging, second breakdown parameter, saturation voltage drop parameter not by the impact of technique.
The utility model is practical; lightly; the high power transistor die Bonder of the suitable metal encapsulation that seal protection performance is good all reaches the effect of actual use, realizes heating soon, air-tightness is good, lightly flexibly, cost is low, efficiency is high, meet the bonding die requirement of the high power transistor of metallic packaging completely.
Claims (4)
1. a high power transistor die Bonder, comprise material loading track (3), pre-hot orbit (5), heating track (6) and blanking track (7), be positioned at the material loading track (3) on same level straight line, pre-hot orbit (5), heating track (6) and blanking track (7) are in turn connected to form the delivery track of base, it is characterized in that: pre-hot orbit (5) and heating track (6) are positioned at base spacer (10), the both sides of pre-hot orbit (5) and heating track (6) are provided with the side dividing plate (9) on fixing base spacer (10), material loading track (3) and blanking track (7) lay respectively at base spacer (10) rear and front end, material loading track (3) bottom is provided with material loading pedestal (4), blanking track (7) bottom is provided with blanking pedestal (8), material loading pedestal (4) and blanking pedestal (8) make material loading track (3), pre-hot orbit (5), the delivery track of the base that heating track (6) and blanking track (7) are formed keeps sustained height, side dividing plate (9) upper end fixed cover plate (1), upper cover plate (1) bottom joining rails cover plate (2), the delivery track length of the base that track cover plate (2) length is less than material loading track (3), pre-hot orbit (5), heating track (6) and blanking track (7) are formed, described pre-hot orbit (5) and heating track (6) middle part are provided with swallow tail shaped slot (14), upper cover plate (1) and track cover plate (2) middle part are provided with welding hole (15), and welding hole (15) top is provided with the 3rd copper pipe (26), described pre-hot orbit (5) is provided with two the first heating rod holes (16), the first heating rod of material loading pedestal (4) is inserted through in first heating rod hole (16), pre-hot orbit (5) is provided with the first thermocouple hole (17), the first thermocouple of material loading pedestal (4) is inserted through in first thermocouple hole (17), pre-hot orbit (5) is provided with the first venthole (19) that the first copper pipe hole (18) is communicated with the first copper pipe hole (18) with several, inserts the first copper pipe (24) in the first copper pipe hole (18), described heating track (6) is provided with two the second heating rod holes (20), the second heating rod of blanking pedestal (8) is inserted through in second heating rod hole (20), heating track (6) is provided with the second thermocouple hole (21), the second thermocouple of blanking pedestal (8) is inserted through in second thermocouple hole (21), heating track (6) is provided with the second venthole (23) that the second copper pipe hole (22) is communicated with the second copper pipe hole (22) with several, inserts the second copper pipe (25) in the second copper pipe hole (22).
2. high power transistor die Bonder as claimed in claim 1, it is characterized in that: described material loading pedestal (4), the common connecting bottom board (11) of blanking pedestal (8) and base spacer (10) bottom, base plate (11) bottom connects pedestal (13) by two floor bracket (12).
3. high power transistor die Bonder as claimed in claim 1, is characterized in that: described upper cover plate (1), side dividing plate (9) and base spacer (10) all adopt asbestos cement material to make.
4. high power transistor die Bonder as claimed in claim 1, is characterized in that: described heating track (6) afterbody is provided with heat insulation mouth (27).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420541676.7U CN204118038U (en) | 2014-09-19 | 2014-09-19 | High power transistor die Bonder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420541676.7U CN204118038U (en) | 2014-09-19 | 2014-09-19 | High power transistor die Bonder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204118038U true CN204118038U (en) | 2015-01-21 |
Family
ID=52335326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420541676.7U Expired - Fee Related CN204118038U (en) | 2014-09-19 | 2014-09-19 | High power transistor die Bonder |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204118038U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231612A (en) * | 2017-12-30 | 2018-06-29 | 无锡固电半导体股份有限公司 | A kind of encapsulation manufacturing method of silicon power npn transistor |
| CN110211899A (en) * | 2019-05-09 | 2019-09-06 | 四川九州光电子技术有限公司 | A kind of preheating of chip and welding system |
| CN111244748A (en) * | 2019-12-31 | 2020-06-05 | 芯思杰技术(深圳)股份有限公司 | Tube seat heating method, tube seat heating device, chip assembling method, chip and heating structure |
| CN112786495A (en) * | 2021-01-21 | 2021-05-11 | 无锡固电半导体股份有限公司 | High-temperature track mechanism for packaging semiconductor high-power device |
-
2014
- 2014-09-19 CN CN201420541676.7U patent/CN204118038U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231612A (en) * | 2017-12-30 | 2018-06-29 | 无锡固电半导体股份有限公司 | A kind of encapsulation manufacturing method of silicon power npn transistor |
| CN108231612B (en) * | 2017-12-30 | 2020-05-12 | 无锡固电半导体股份有限公司 | Packaging manufacturing method of silicon NPN type power transistor |
| CN110211899A (en) * | 2019-05-09 | 2019-09-06 | 四川九州光电子技术有限公司 | A kind of preheating of chip and welding system |
| CN111244748A (en) * | 2019-12-31 | 2020-06-05 | 芯思杰技术(深圳)股份有限公司 | Tube seat heating method, tube seat heating device, chip assembling method, chip and heating structure |
| CN112786495A (en) * | 2021-01-21 | 2021-05-11 | 无锡固电半导体股份有限公司 | High-temperature track mechanism for packaging semiconductor high-power device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150121 Termination date: 20180919 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |