CN203653752U - Crystal growth furnace - Google Patents
Crystal growth furnace Download PDFInfo
- Publication number
- CN203653752U CN203653752U CN201320841034.4U CN201320841034U CN203653752U CN 203653752 U CN203653752 U CN 203653752U CN 201320841034 U CN201320841034 U CN 201320841034U CN 203653752 U CN203653752 U CN 203653752U
- Authority
- CN
- China
- Prior art keywords
- crucible
- thickness
- lower insulation
- brilliant stove
- warming plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title abstract description 8
- 238000009413 insulation Methods 0.000 claims abstract description 46
- 238000010792 warming Methods 0.000 claims description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052710 silicon Inorganic materials 0.000 abstract description 18
- 239000010703 silicon Substances 0.000 abstract description 18
- 238000000034 method Methods 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract 2
- 239000004575 stone Substances 0.000 description 15
- 230000005855 radiation Effects 0.000 description 11
- 230000008859 change Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Abstract
The utility model discloses a crystal growth furnace which comprises a furnace body, a crucible located in the furnace body, and an insulation board formed on the inner wall of the furnace body, wherein the insulation board comprises an upper insulation inner side plate horizontally arranged at the top end of the crucible, and a lower insulation board vertically distributed around the crucible, the thickness of the lower insulation board, which is close to the edge of the bottom end of the crucible, is less than that of the lower insulation inner side board at other positions. The utility model further discloses a control method of uniform heat dissipation of the crystal growth furnace. By virtue of a changed design of a geometrical shape of the lower insulation inner side plate of the crystal growth furnace, by using a principle of poor insulation effect due to smaller thickness of the insulation board, the condition of lower heat dissipation speed of the bottom side edge of an inherent silicon ingot is improved, and thus the purpose of uniformly dissipating heat of the bottom of the whole silicon ingot is achieved. The dislocation defect of a crystal structure in a local region during oriented vertical crystal growth is prevented from being increased, so that the whole conversion efficiency of the silicon ingot is increased.
Description
Technical field
The application belongs to photovoltaic industrial field, particularly relates to a kind of long brilliant stove.
Background technology
Present stage, because the operation of photovoltaic industry circle is difficult tired, each manufacturers invariably thinkingly goes to fall this, increases casting heavy stone used as an anchor availability and most important lifting silicon chip efficiency of conversion.In this, that each polycrystalline furnace equipment vendor cannot provide is simple and easy, par and technical service that effectively silicon heavy stone used as an anchor bottom heat radiation homogeneity is improved.
Existing GT grows brilliant stove, and the growth of polycrystalline silicon ingot is mainly that the graphite radiating piece that sees through silicon heavy stone used as an anchor bottom is got rid of heat with thermal radiation and convection type, is convenient to form the required cold-zone excessively of silicon heavy stone used as an anchor crystal grain-growth.Due to first defect in the sky of long brilliant stove design, therefore all general phenomenons that has bottom heat radiation inequality of the casting heavy stone used as an anchor technology of existing GT stove.Thus, while up carrying out the vertical long crystalline substance of orientation, crystal grain-growth direction surely can be disorderly and unsystematic, forms the increase of regional area crystalline structure dislocation (Dislocation) defect, finally causes the decline of silicon heavy stone used as an anchor entirety efficiency of conversion.
Summary of the invention
The purpose of this utility model provides a kind of long brilliant stove, has solved the problem of bottom heat radiation inequality in prior art.
For achieving the above object, the utility model provides following technical scheme:
A kind of long brilliant stove, comprising:
Body of heater;
Be positioned at the crucible of described body of heater;
Be formed at the warming plate on described inboard wall of furnace body, described warming plate comprises the upper insulation interior plate that is horizontally placed on described crucible top, and being vertically distributed in the lower warming plate of described crucible surrounding, the thickness that described lower warming plate is pressed close to described crucible bottom edge place is less than the thickness of other positions of lower insulation inner panel.
Preferably, in the brilliant stove of above-mentioned length, described lower warming plate is pressed close to the little 0.5 ~ 1cm of thickness that is incubated other positions of inner panel under the Thickness Ratio at described crucible bottom edge place.
Preferably, in the brilliant stove of above-mentioned length, described lower warming plate is set to two-layer, comprises lower insulation interior plate and the lower insulation outer panel between described lower insulation interior plate and inboard wall of furnace body.
Preferably, in the brilliant stove of above-mentioned length, described lower insulation interior plate is pressed close to the little 0.5 ~ 1cm of thickness that is incubated other positions of interior plate under the Thickness Ratio at described crucible bottom edge place.
Preferably, in the brilliant stove of above-mentioned length, the one side that described lower insulation interior plate is pressed close to described crucible offers rectangular recess.
Preferably, in the brilliant stove of above-mentioned length, the left and right width of described rectangular recess is 0.5 ~ 1cm.
Preferably, in the brilliant stove of above-mentioned length, described rectangular recess be highly 17 ~ 20cm up and down.
Preferably, in the brilliant stove of above-mentioned length, the material of described warming plate is the hard felt of graphite.
Compared with prior art, the utility model has the advantage of: the utility model is by being incubated the change design of interior plate geometrical shape under long brilliant stove, we just can utilize the attenuation of warming plate thickness, the principle of heat insulation effect variation, the slower situation of intrinsic silicon heavy stone used as an anchor bottom side heat radiation is improved, and reached the object that bulk silicon heavy stone used as an anchor bottom even dispels the heat.The increase of regional area crystalline structure dislocation (Dislocation) defect while avoiding directed vertical long crystalline substance, is promoted silicon heavy stone used as an anchor entirety efficiency of conversion.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, the accompanying drawing the following describes is only some embodiment that record in the application, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Figure 1 shows that the structural representation of long brilliant stove in the utility model specific embodiment.
Embodiment
The basis that the utility model relies on, is via the understanding to polycrystalline furnace heat-insulation system and analysis, and passes the application of scientific principle in conjunction with heat.The utility model is by being incubated the change design of interior plate geometrical shape under long brilliant stove, we just can utilize the attenuation of warming plate thickness, the principle of heat insulation effect variation, is improved the slower situation of intrinsic silicon heavy stone used as an anchor bottom side heat radiation, and reaches the object of bulk silicon heavy stone used as an anchor bottom even heat radiation.
Particularly, the utility model embodiment discloses the brilliant stove of a kind of length, comprising:
Body of heater;
Be positioned at the crucible of described body of heater;
Be formed at the warming plate on described inboard wall of furnace body, described warming plate comprises the upper insulation interior plate that is horizontally placed on described crucible top, and being vertically distributed in the lower warming plate of described crucible surrounding, the thickness that described lower warming plate is pressed close to described crucible bottom edge place is less than the thickness of other positions of lower insulation inner panel.
The utility model embodiment also discloses a kind of control method of growing brilliant stove Homogeneouslly-radiating, and the thickness of warming plate corresponding to crucible bottom edge place is carried out to attenuate, reaches the heat radiation of bulk silicon heavy stone used as an anchor bottom even.
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is described in detail, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, the every other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work, belongs to the scope that the utility model is protected.
Shown in ginseng Fig. 1, in the utility model embodiment, long brilliant stove is GT polycrystalline furnace, comprises body of heater 1, is provided with crucible 2 in body of heater 1, and crucible 2 is interior in order to hold silicon soup.
On the inwall of body of heater 1, be also provided with warming plate 3, warming plate 3 comprises the upper insulation interior plate 31 that is horizontally placed on crucible 2 tops and the lower warming plate 32 that is vertically distributed in crucible 2 surroundings.Lower warming plate 32 is spliced by polylith warming plate, and is set to two-layerly, and one deck of wherein pressing close to crucible 2 is lower insulation interior plate 321, and one deck of pressing close to body of heater 1 inwall is lower insulation outer panel 322.
The thickness of above-mentioned upper insulation interior plate 31, lower insulation interior plate 321 and lower insulation outer panel 322 is 4.5cm, and material is the hard felt of graphite.
In order to solve the long brilliant furnace bottom of the existing GT uneven phenomenon of dispelling the heat, the utility model embodiment carries out attenuate to the thickness of the crucible 2 corresponding warming plates in bottom margin place.
Particularly, the one side that lower insulation interior plate 321 is pressed close to crucible 2 offers rectangular recess 4, the left and right width of rectangular recess 4 is 0.5 ~ 1cm, be highly 17 ~ 20cm up and down, all lower insulation interior plates 321 and lower insulation outer panel 322 measure-alike, the lower insulation interior plate 321 of each piece or lower insulation outer panel 322 be highly up and down 57.6cm, the height between rectangular recess 4 and lower insulation interior plate 321 tops is 11 ~ 14cm.
In the utility model the second embodiment, in order to meet the long brilliant furnace bottom heat radiation of GT evenly, also the thickness of lower insulation outer panel 322 can be carried out to attenuate 0.5 ~ 1cm.
In the utility model the 3rd embodiment, in order to meet the long brilliant furnace bottom heat radiation of GT evenly, can also carry out attenuate to the thickness of insulation interior plate 321 and insulation outer panel 322, the thickness sum of insulation interior plate 321 and 322 attenuates of insulation outer panel is 0.5 ~ 1cm simultaneously.
In sum, the utility model is by being incubated the change design of interior plate geometrical shape under long brilliant stove, we just can utilize the attenuation of warming plate thickness, the principle of heat insulation effect variation, the slower situation of intrinsic silicon heavy stone used as an anchor bottom side heat radiation is improved, and reached the object that bulk silicon heavy stone used as an anchor bottom even dispels the heat.The increase of regional area crystalline structure dislocation (Dislocation) defect while avoiding directed vertical long crystalline substance, is promoted silicon heavy stone used as an anchor entirety efficiency of conversion.
It should be noted that, in this article, relational terms such as the first and second grades is only used for an entity or operation to separate with another entity or operational zone, and not necessarily requires or imply and between these entities or operation, have the relation of any this reality or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thereby the process, method, article or the equipment that make to comprise a series of key elements not only comprise those key elements, but also comprise other key elements of clearly not listing, or be also included as the intrinsic key element of this process, method, article or equipment.The in the situation that of more restrictions not, the key element being limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises described key element and also have other identical element.
The above is only the application's embodiment; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the application's protection domain.
Claims (8)
1. a long brilliant stove, is characterized in that, comprising:
Body of heater;
Be positioned at the crucible of described body of heater;
Be formed at the warming plate on described inboard wall of furnace body, described warming plate comprises the upper insulation interior plate that is horizontally placed on described crucible top, and being vertically distributed in the lower warming plate of described crucible surrounding, the thickness that described lower warming plate is pressed close to described crucible bottom edge place is less than the thickness of other positions of lower insulation inner panel.
2. the brilliant stove of length according to claim 1, is characterized in that: described lower warming plate is pressed close to the little 0.5 ~ 1cm of thickness that is incubated other positions of inner panel under the Thickness Ratio at described crucible bottom edge place.
3. the brilliant stove of length according to claim 1, is characterized in that: described lower warming plate is set to two-layer, comprises lower insulation interior plate and the lower insulation outer panel between described lower insulation interior plate and inboard wall of furnace body.
4. the brilliant stove of length according to claim 3, is characterized in that: described lower insulation interior plate is pressed close to the little 0.5 ~ 1cm of thickness that is incubated other positions of interior plate under the Thickness Ratio at described crucible bottom edge place.
5. the brilliant stove of length according to claim 4, is characterized in that: the one side that described lower insulation interior plate is pressed close to described crucible offers rectangular recess.
6. the brilliant stove of length according to claim 5, is characterized in that: the left and right width of described rectangular recess is 0.5 ~ 1cm.
7. the brilliant stove of length according to claim 6, is characterized in that: described rectangular recess be highly 17 ~ 20cm up and down.
8. the brilliant stove of length according to claim 1, is characterized in that: the material of described warming plate is the hard felt of graphite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320841034.4U CN203653752U (en) | 2013-12-19 | 2013-12-19 | Crystal growth furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320841034.4U CN203653752U (en) | 2013-12-19 | 2013-12-19 | Crystal growth furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203653752U true CN203653752U (en) | 2014-06-18 |
Family
ID=50920164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320841034.4U Expired - Lifetime CN203653752U (en) | 2013-12-19 | 2013-12-19 | Crystal growth furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203653752U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103741211A (en) * | 2013-12-19 | 2014-04-23 | 镇江环太硅科技有限公司 | Crystal growth furnace and control method for uniform heat dissipation of crystal growth furnace |
-
2013
- 2013-12-19 CN CN201320841034.4U patent/CN203653752U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103741211A (en) * | 2013-12-19 | 2014-04-23 | 镇江环太硅科技有限公司 | Crystal growth furnace and control method for uniform heat dissipation of crystal growth furnace |
| CN103741211B (en) * | 2013-12-19 | 2016-08-31 | 镇江环太硅科技有限公司 | Long crystal furnace and the control method of long crystal furnace Homogeneouslly-radiating |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201221 Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 212216 Yangzhong Chemical Industry Park, Zhenjiang City, Jiangsu Province Patentee before: ZHENJIANG HUANTAI SILICON TECHNOLOGY Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee before: Jiangsu Meike Solar Energy Technology Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140618 |