CN103741211B - Long crystal furnace and the control method of long crystal furnace Homogeneouslly-radiating - Google Patents
Long crystal furnace and the control method of long crystal furnace Homogeneouslly-radiating Download PDFInfo
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- CN103741211B CN103741211B CN201310702144.7A CN201310702144A CN103741211B CN 103741211 B CN103741211 B CN 103741211B CN 201310702144 A CN201310702144 A CN 201310702144A CN 103741211 B CN103741211 B CN 103741211B
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Abstract
The invention discloses a kind of long crystal furnace, including: body of heater；It is positioned at the crucible of described body of heater；It is formed at the warming plate on described inboard wall of furnace body, described warming plate includes the upper insulation interior plate being horizontally placed on described crucible top, and vertically it being distributed in the lower warming plate of described crucible surrounding, described lower warming plate presses close to the thickness less than lower other positions of insulation inner panel of the thickness at described crucible bottom edge.The invention also discloses the control method of a kind of long crystal furnace Homogeneouslly-radiating.The present invention is by being incubated the design for change of interior plate geometry under long crystal furnace, we just may utilize warming plate lower thickness, the principle that heat insulation effect is deteriorated, is improved the slower situation of intrinsic silicon heavy stone used as an anchor bottom side heat radiation, and is reached the purpose of bulk silicon heavy stone used as an anchor bottom even heat radiation.When avoiding orienting vertically long crystalline substance, the increase of regional area crystal structure dislocation (Dislocation) defect, makes silicon heavy stone used as an anchor overall transformation efficiency be promoted.
Description
Technical field
The application belongs to solar photovoltaic industry field, particularly relates to a kind of long crystal furnace and the control method of long crystal furnace Homogeneouslly-radiating.
Background technology
Present stage, owing to the operation of photovoltaic industry circle is difficult tired, each manufacturer the most thinkingly go fall this, increase casting heavy stone used as an anchor availability and
Important lifting silicon chip conversion efficiency.When this, each polycrystalline furnace equipment business cannot provide simply, par and at the bottom of effective silicon heavy stone used as an anchor
The technical service that portion's heat dissipation uniformity is improved.
Existing GT long crystal furnace, the growth of polycrystalline silicon ingot, mainly through the graphite radiating block bottom silicon heavy stone used as an anchor with thermal radiation and convection current side
Formula gets rid of heat, it is simple to form the cold-zone excessively needed for silicon heavy stone used as an anchor crystal grain-growth.Due to the defect that long crystal furnace design is the most in the sky, thus existing
There is the phenomenon that the most universal existence bottom heat radiation of heavy stone used as an anchor technology of casting of GT stove is uneven.Consequently, it is possible to be up oriented vertically long crystalline substance
Time, crystal grain-growth direction surely can be disorderly and unsystematic, forms the increase of regional area crystal structure dislocation (Dislocation) defect,
Ultimately result in the decline of silicon heavy stone used as an anchor overall transformation efficiency.
Summary of the invention
It is an object of the invention to provide a kind of long crystal furnace and the control method of long crystal furnace Homogeneouslly-radiating, solve in prior art bottom heat radiation not
Equal problem.
For achieving the above object, the present invention provides following technical scheme:
A kind of long crystal furnace, including:
Body of heater；
It is positioned at the crucible of described body of heater；
Being formed at the warming plate on described inboard wall of furnace body, described warming plate includes being horizontally placed on inside the upper insulation on described crucible top
Plate, and vertically it is distributed in the lower warming plate of described crucible surrounding, described lower warming plate presses close to the thickness at described crucible bottom edge
Degree is less than the thickness of lower other positions of insulation inner panel.
Preferably, in above-mentioned long crystal furnace, described lower warming plate press close to thickness at described crucible bottom edge than lower insulation inner panel its
The thickness little 0.5～1cm of his position.
Preferably, in above-mentioned long crystal furnace, described lower warming plate is set to two-layer, including lower insulation interior plate and be positioned at described under
Lower insulation outer panel between insulation interior plate and inboard wall of furnace body.
Preferably, in above-mentioned long crystal furnace, described lower insulation interior plate presses close to the thickness ratio at described crucible bottom edge in lower insulation
The thickness little 0.5～1cm of other positions of side plate.
Preferably, in above-mentioned long crystal furnace, the one side that described lower insulation interior plate presses close to described crucible offers rectangular recess.
Preferably, in above-mentioned long crystal furnace, the left and right width of described rectangular recess is 0.5～1cm.
Preferably, in above-mentioned long crystal furnace, the upper-lower height of described rectangular recess is 17～20cm.
Preferably, in above-mentioned long crystal furnace, the material of described warming plate is the hard felt of graphite.
Correspondingly, present invention also offers the control method of a kind of long crystal furnace Homogeneouslly-radiating, to warming plate corresponding at crucible bottom edge
Thickness carry out thinning, reach bulk silicon heavy stone used as an anchor bottom even heat radiation.
Preferably, in the control method of above-mentioned long crystal furnace Homogeneouslly-radiating, the thinning thickness of described warming plate is 0.5～1cm.
Compared with prior art, it is an advantage of the current invention that: the present invention passes through to be incubated under long crystal furnace the design for change of interior plate geometry,
We just may utilize warming plate lower thickness, the principle that heat insulation effect is deteriorated, and the slower situation of intrinsic silicon heavy stone used as an anchor bottom side heat radiation is added
To improve, and reach the purpose of bulk silicon heavy stone used as an anchor bottom even heat radiation.Regional area crystal structure dislocation when avoiding orienting vertically long crystalline substance
(Dislocation) increase of defect, makes silicon heavy stone used as an anchor overall transformation efficiency be promoted.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present application or technical scheme of the prior art, below will be to embodiment or description of the prior art
The accompanying drawing used required in is briefly described, it should be apparent that, the accompanying drawing in describing below is only described in the application
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to according to this
A little accompanying drawings obtain other accompanying drawing.
Fig. 1 show the structural representation of long crystal furnace in the specific embodiment of the invention.
Detailed description of the invention
The basis that the present invention is relied on, is via to the understanding of polycrystalline furnace heat-insulation system and analysis, and combines heat and pass the application of scientific principle.This
Inventing the design for change by being incubated interior plate geometry under long crystal furnace, we just may utilize warming plate lower thickness, insulation effect
The principle that fruit is deteriorated, is improved the slower situation of intrinsic silicon heavy stone used as an anchor bottom side heat radiation, and is reached the heat radiation of bulk silicon heavy stone used as an anchor bottom even
Purpose.
Specifically, the embodiment of the invention discloses a kind of long crystal furnace, including:
Body of heater；
It is positioned at the crucible of described body of heater；
Being formed at the warming plate on described inboard wall of furnace body, described warming plate includes being horizontally placed on inside the upper insulation on described crucible top
Plate, and vertically it is distributed in the lower warming plate of described crucible surrounding, described lower warming plate presses close to the thickness at described crucible bottom edge
Degree is less than the thickness of lower other positions of insulation inner panel.
The embodiment of the invention also discloses the control method of a kind of long crystal furnace Homogeneouslly-radiating, to warming plate corresponding at crucible bottom edge
Thickness carries out thinning, reaches the heat radiation of bulk silicon heavy stone used as an anchor bottom even.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, it is clear that
Described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention,
The every other embodiment that those of ordinary skill in the art are obtained on the premise of not making creative work, broadly falls into this
The scope of bright protection.
Shown in ginseng Fig. 1, in the embodiment of the present invention, long crystal furnace is GT polycrystalline furnace, including body of heater 1, is provided with crucible 2 in body of heater 1,
In order to hold silicon soup in crucible 2.
Being additionally provided with warming plate 3 on the inwall of body of heater 1, warming plate 3 includes the upper insulation interior plate being horizontally placed on above crucible 2
31 and be vertically distributed in the lower warming plate 32 of crucible 2 surrounding.Lower warming plate 32 is spliced by polylith warming plate, and sets
Being set to two-layer, one layer that wherein presses close to crucible 2 is lower insulation interior plate 321, and one layer that presses close to body of heater 1 inwall is lower insulation
Outer panel 322.
The thickness of above-mentioned upper insulation interior plate 31, lower insulation interior plate 321 and lower insulation outer panel 322 is 4.5cm, material
Matter is the hard felt of graphite.
The phenomenon uneven in order to solve existing GT long crystal furnace bottom heat radiation, the embodiment of the present invention is to corresponding at crucible 2 bottom margin
The thickness of warming plate carries out thinning.
Specifically, the one side that lower insulation interior plate 321 presses close to crucible 2 offers rectangular recess, and the left and right width of rectangular recess is
0.5～1cm, upper-lower height is 17～20cm, all lower insulation interior plates 321 and the size phase of lower insulation outer panel 322
With, the lower insulation interior plate 321 of each piece or the upper-lower height of lower insulation outer panel 322 are 57.6cm, rectangular recess
And the height between lower insulation interior plate 321 top is 11～14cm.
In second embodiment of the invention, uniform in order to meet GT long crystal furnace bottom heat radiation, it is also possible to by lower insulation outer panel 322
Thickness carry out thinning 0.5～1cm.
In third embodiment of the invention, uniform in order to meet GT long crystal furnace bottom heat radiation, it is also possible to insulation interior plate 321 with
And the thickness of insulation outer panel 322 carries out thinning simultaneously, the thickness that insulation interior plate 321 is thinning with insulation outer panel 322
Degree sum is 0.5～1cm.
In sum, the present invention is by being incubated the design for change of interior plate geometry under long crystal furnace, we just may utilize warming plate thickness
Thinning, that heat insulation effect is deteriorated principle, is improved the slower situation of intrinsic silicon heavy stone used as an anchor bottom side heat radiation, and is reached bulk silicon heavy stone used as an anchor
The purpose of bottom even heat radiation.The increasing of regional area crystal structure dislocation (Dislocation) defect when avoiding orienting vertically long crystalline substance
Add, make silicon heavy stone used as an anchor overall transformation efficiency be promoted.
It should be noted that in this article, the relational terms of such as first and second or the like is used merely to an entity or operation
Separate with another entity or operating space, and there is any this reality between not necessarily requiring or imply these entities or operating
The relation on border or order.And, term " includes ", " comprising " or its any other variant are intended to the bag of nonexcludability
Contain, so that include that the process of a series of key element, method, article or equipment not only include those key elements, but also include
Other key elements being not expressly set out, or also include the key element intrinsic for this process, method, article or equipment.
In the case of there is no more restriction, statement " including ... " key element limited, it is not excluded that including described key element
Process, method, article or equipment there is also other identical element.
The above is only the detailed description of the invention of the application, it is noted that for those skilled in the art,
On the premise of the application principle, it is also possible to make some improvements and modifications, these improvements and modifications also should be regarded as the application
Protection domain.
Claims (1)
1. a long crystal furnace, described long crystal furnace is GT long crystal furnace, it is characterised in that including: body of heater；It is positioned at the crucible of described body of heater；It is formed at the warming plate on described inboard wall of furnace body, described warming plate includes the upper insulation interior plate being horizontally placed on described crucible top, and vertically it being distributed in the lower warming plate of described crucible surrounding, described lower warming plate presses close to the thickness less than lower other positions of warming plate of the thickness at described crucible bottom edge；Described lower warming plate presses close to the little 0.5 ~ 1cm of thickness than lower other positions of warming plate of the thickness at described crucible bottom edge；Described lower warming plate is set to two-layer, including lower insulation interior plate and the lower insulation outer panel between described lower insulation interior plate and inboard wall of furnace body；Described lower insulation interior plate presses close to the little 0.5 ~ 1cm of thickness than lower other positions of insulation interior plate of the thickness at described crucible bottom edge；The one side that described lower insulation interior plate presses close to described crucible offers rectangular recess；Height between rectangular recess and lower insulation interior plate top is 11 ~ 14cm, and the thickness of described rectangular recess is 0.5 ~ 1cm；The upper-lower height of described rectangular recess is 17 ~ 20cm；The material of described warming plate is the hard felt of graphite.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310702144.7A CN103741211B (en) | 2013-12-19 | 2013-12-19 | Long crystal furnace and the control method of long crystal furnace Homogeneouslly-radiating |
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| CN201310702144.7A CN103741211B (en) | 2013-12-19 | 2013-12-19 | Long crystal furnace and the control method of long crystal furnace Homogeneouslly-radiating |
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| CN103741211B true CN103741211B (en) | 2016-08-31 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011173A (en) * | 2009-09-08 | 2011-04-13 | 国立大学法人信州大学 | Equipment for growing sapphire single crystal |
| CN102162125A (en) * | 2011-05-12 | 2011-08-24 | 石金精密科技（深圳）有限公司 | Thermal field structure of polysilicon ingot casting furnace |
| CN203653752U (en) * | 2013-12-19 | 2014-06-18 | 镇江环太硅科技有限公司 | Crystal growth furnace |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09183690A (en) * | 1995-12-28 | 1997-07-15 | Sumitomo Metal Ind Ltd | Heat shield and its desorption tool |
| WO2005092791A1 (en) * | 2004-03-29 | 2005-10-06 | Kyocera Corporation | Silicon casting device and multicrystal silicon ingot producing method |
| WO2007108338A1 (en) * | 2006-03-23 | 2007-09-27 | Ngk Insulators, Ltd. | Process and apparatus for producing nitride single crystal |
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2013
- 2013-12-19 CN CN201310702144.7A patent/CN103741211B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011173A (en) * | 2009-09-08 | 2011-04-13 | 国立大学法人信州大学 | Equipment for growing sapphire single crystal |
| CN102162125A (en) * | 2011-05-12 | 2011-08-24 | 石金精密科技（深圳）有限公司 | Thermal field structure of polysilicon ingot casting furnace |
| CN203653752U (en) * | 2013-12-19 | 2014-06-18 | 镇江环太硅科技有限公司 | Crystal growth furnace |
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| CN103741211A (en) | 2014-04-23 |
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Effective date of registration: 20190312 Address after: 212200 Ganglong Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Silicon Energy Co., Ltd. Address before: 212216 Yangzhong Chemical Industry Park, Zhenjiang City, Jiangsu Province Patentee before: Zhenjiang Huantai Silicon Technology Co., Ltd. |
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Denomination of invention: Crystal growth furnace and control method for uniform heat dissipation of crystal growth furnace Effective date of registration: 20191113 Granted publication date: 20160831 Pledgee: China Everbright Bank, Limited by Share Ltd, Nanjing branch Pledgor: Jiangsu Meike Silicon Energy Co., Ltd. Registration number: Y2019320000280 |
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Date of cancellation: 20210127 Granted publication date: 20160831 Pledgee: China Everbright Bank Limited by Share Ltd. Nanjing branch Pledgor: JIANGSU MEIKE SILICON ENERGY Co.,Ltd. Registration number: Y2019320000280 |
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Effective date of registration: 20210202 Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 212200 Ganglong Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee before: JIANGSU MEIKE SILICON ENERGY Co.,Ltd. |
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Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co., Ltd Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee before: Jiangsu Meike Solar Energy Technology Co., Ltd |