CN203573989U - Crystalline silicon having aluminium oxide passive film - Google Patents
Crystalline silicon having aluminium oxide passive film Download PDFInfo
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- CN203573989U CN203573989U CN201320603535.9U CN201320603535U CN203573989U CN 203573989 U CN203573989 U CN 203573989U CN 201320603535 U CN201320603535 U CN 201320603535U CN 203573989 U CN203573989 U CN 203573989U
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- al2o3
- layer
- alundum
- crystalline silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model provides crystalline silicon having an aluminium oxide passive film. The crystalline silicon comprises a silicon substrate, and a first aluminium oxide passive film layer, a second aluminium oxide passive film layer, and a SiNx hat layer which are arranged on the silicon substrate in sequence, wherein the thickness of the first aluminium oxide passive film layer is smaller than that of the second aluminium oxide passive film layer. The crystalline silicon aims to solve the problem that bubble exists after an Al2O3/SiNx lamination film is sintered, and provides an Al2O3 double atomic layer deposition technology in which H2O and O3 are combined, and an Al2O3 film taking TMA and O3 as reaction sources is relatively loosened than a H2O based Al2O3 film, so that H2 aggregation is avoided effectively; the atomic layer deposition technology is utilized, so that thickness of the an Al2O3 double atom layer is controlled accurately, and Al2O3 passive film prepared in such a manner has good photoelectric conversion efficiency, and hydrogen bubble generation is avoided.
Description
Technical field
The utility model belongs to field of semiconductor devices, is specifically related to a kind of preparation method of semiconductor material surface passivating film.
Background technology
In crystal silicon solar battery field, the passivating material of crystal silicon battery mainly comprises silica (SiO
2), amorphous silicon (α-Si), silicon nitride (SiN
x), alundum (Al2O3) (Al
2o
3) and carborundum (SiC
x) etc.Wherein, Al
2o
3film contains high concentration (1012～1013e/cm
2) fixed negative charge and film in contain higher concentration (2～5atom%) free hydrogen atom, this makes Al
2o
3film is suitable as the passivating material of p-type crystal silicon battery back electrode very much.Cell piece produces photo-generated carrier when illumination, and photo-generated carrier is divided into many sons and few son, and wherein there is extremely important impact in few sub life-span on photoelectric conversion efficiency.When monocrystaline silicon solar cell sheet attenuate, surface lifetime is far below body life time.Surface passivation can reduce semi-conductive surface activity, and surperficial recombination velocity is reduced, and reduces few sub complex centre, surface.Correlative study shows, based on industrial manufacture process, introducing Al
2o
3the p-type crystal silicon battery photoelectric conversion efficiency of passivating technique can reach 19～20%.
Al
2o
3the main preparation technology of film has ald (ALD) technique, plasma enhanced chemical vapor deposition (PECVD) technique and magnetron sputtering (Sputtering) technique etc.Wherein, the Al that prepared by ALD technique
2o
3film is best to the passivation effect of crystal silicon battery.ALD technique is a kind of periodicity technique of successively growing with accurate monolayer form, the Al of preparation
2o
3film have densification, composition even thickness, THICKNESS CONTROL accurately, step coverage advantages of higher.ALD technique has become crystal silicon battery field Al
2o
3the main flow preparation technology of passivation layer.
In p-type crystal silicon battery, introduce Al
2o
3after passivation layer, for preventing Al
2o
3film is destroyed in follow-up aluminium back surface field sintering process, need to be at Al
2o
3film outside deposition layer of sin x cap layer.In actual application, Al
2o
3/ SiNx laminate film often there will be the bubble of some after the aluminium back surface field sintering process of～800 ℃ of experience in film, and the appearance of bubble has reduced Al
2o
3inactivating performance and make the contact performance variation of aluminum back electrode with crystal silicon battery, the appearance of these problems all can reduce the performance of crystal silicon battery.
Utility model content
The problem existing in order to solve this area, the purpose of this utility model is to provide a kind of crystalline silicon that has alundum (Al2O3) passivating film.
The technical scheme that realizes the utility model object is:
Have a crystalline silicon for alundum (Al2O3) passivating film, described crystalline silicon comprises silicon substrate, and the ground floor alundum (Al2O3) passivating film of arranging successively from silicon substrate, second layer alundum (Al2O3) passivating film and SiNx cap layer;
Described ground floor alundum (Al2O3) passivation film thickness is less than second layer alundum (Al2O3) passivation film thickness.
Wherein, described silicon substrate is p-type crystalline silicon or N-shaped crystalline silicon.
Wherein, described ground floor alundum (Al2O3) passivation film thickness is 4～15nm; Second layer alundum (Al2O3) passivation film thickness is 8～25nm.
Wherein, described ground floor alundum (Al2O3) passivating film density is 3.0～3.3g/cm
3; Second layer alundum (Al2O3) passivating film density is 2.5～2.9g/cm
3.Second layer alundum (Al2O3) passivating film is more loose than ground floor.
Wherein, described SiNx cap layer thickness is 75-85nm.
The described crystalline silicon preparation method who has alundum (Al2O3) passivating film comprises step:
1) in ald reaction chamber, load silicon substrate, described reaction chamber is vacuumized, stable gas pressure is at 0.1-50Torr
2) take trimethyl aluminium (TMA) as aluminium source, H
2o is oxygen source, carries out ald, and reaction time, number was 40-160;
3) take trimethyl aluminium as aluminium source, O
3for oxygen source, carry out ald, reaction time, number was 95-300.
Adopt TMA and H
2o prepares Al as reaction source
2o
3, Al
2o
3the intrinsic growth rate of film is
film densification, Al
2o
3the transition zone SiOx layer thicker (～3nm) at-Si interface, and C in film, H content are relatively high; With TMA and O
3for reaction source is prepared Al
2o
3the intrinsic growth rate of film is relatively low
with H
2o base Al
2o
3film is more loose than relatively, Al
2o
3the transition zone SiOx thinner (～1nm) at-Si interface, and C in film, H content are relatively low.
The beneficial effects of the utility model are:
For Al
2o
3after/SiNx laminate film sintering, there is the problem of bubble, propose H
2o and O
3the Al combining
2o
3diatomic layer depositing operation, with TMA and O
3for reaction source is prepared Al
2o
3film compares H
2o base Al
2o
3relatively loose, effectively avoid H
2assemble; Utilize technique for atomic layer deposition, accurately control Al
2o
3diatomic layer thickness, what prepare has an Al
2o
3the crystal silicon of passivating film has good photoelectric conversion efficiency and there is no bubble hydrogen.
Accompanying drawing explanation
Fig. 1 is the structure chart that has the crystalline silicon of alundum (Al2O3) passivating film.In figure: 1 is SiNx cap layer, 2 is second layer alundum (Al2O3) passivating film, and 3 is ground floor alundum (Al2O3) passivating film, and 4 is silicon substrate.
Embodiment
Following examples are used for illustrating the utility model, but are not used for limiting scope of the present utility model.In the situation that not deviating from the utility model spirit and essence, the modification that the utility model method, step or condition are done or replacement, all belong to protection range of the present utility model.
If do not specialize, the conventional means that in embodiment, technological means used is well known to those skilled in the art.
Atomic layer deposition apparatus is the ALD of Beijing Qixing Huachuang Electronics Co., Ltd.
Take p-type crystal silicon as substrate, put into the reaction chamber 5 of atomic layer deposition apparatus, reaction chamber is vacuumized, then use inert gas (argon gas) by stable gas pressure at 0.1Torr.
TMA-H
2o prepares Al
2o
3stage: 150 ℃ of reaction temperatures, reaction pressure 0.1Torr, reaction time 15s, 15 ℃ of TMA source temperature, H
220 ℃ of O source temperature, carrier gas flux 0.5slm, reaction time number 40;
TMA-O
3preparation Al
2o
3stage: 180 ℃ of reaction temperatures, reaction pressure 0.1Torr, process cycle 8s, 15 ℃ of TMA source temperature, carrier gas flux 0.5slm, O
3concentration 200g/m
3, O
3flow 2slm, process cycle number 95;
Adopt the crystalline silicon that has alundum (Al2O3) passivating film (structure is as Fig. 1) that as above prepared by technique, Al
2o
3passivation layer gross thickness is 12.6nm, and the thickness of its second layer alundum (Al2O3) passivating film 2 is 8nm, and the thickness of ground floor alundum (Al2O3) passivating film 3 is 4nm, and ground floor alundum (Al2O3) passivating film 3 density are 3.0g/cm
3; Second layer alundum (Al2O3) passivating film density is 2.5g/cm
3.Through 800 ℃, after 3s high-temperature technology is processed, film surface occurs without bubble.Without heat treated Al
2o
3after the SiNx cap layer 1 of upper deposition one deck 80nm (pecvd process), after same high-temperature technology is processed, laminate film surface is also without bubble appearance, and bubble coverage rate has reduced by 100%.
Embodiment 2
Reaction chamber and substrate are with embodiment 1.
TMA-H
2o prepares Al
2o
3stage: 300 ℃ of reaction temperatures, reaction pressure 15Torr, process cycle 5s, 35 ℃ of TMA source temperature, H
240 ℃ of O source temperature, carrier gas flux 5slm, process cycle number 160;
TMA-O
3preparation Al
2o
3stage: 300 ℃ of reaction temperatures, reaction pressure 15Torr, process cycle 3s, 35 ℃ of TMA source temperature, carrier gas flux 5slm, O
3concentration 300g/m
3, O
3flow 20slm, process cycle number 300;
Adopt the crystalline silicon that has alundum (Al2O3) passivating film (structure is as Fig. 1) that as above prepared by technique, Al
2o
3passivation layer gross thickness is 40nm, and the thickness of its second layer alundum (Al2O3) passivating film 2 is 25nm, and the thickness of ground floor alundum (Al2O3) passivating film 3 is 15nm, and ground floor alundum (Al2O3) passivating film density is 3.3g/cm
3; Second layer alundum (Al2O3) passivating film density is 2.9g/cm
3..Through 800 ℃, after 3s high-temperature technology is processed, film surface occurs without bubble.Without heat treated Al
2o
3after the SiNx cap layer 1 of upper deposition one deck 80nm (pecvd process), after same high-temperature technology is processed, laminate film surface is also without bubble appearance, and bubble has covered and reduced approximately 90%.
Embodiment 3
Reaction chamber and substrate are with embodiment 1.
TMA-H
2o prepares Al
2o
3stage: 220 ℃ of reaction temperatures, reaction pressure 1Torr, process cycle 7s, 30 ℃ of TMA source temperature, H
235 ℃ of O source temperature, carrier gas flux 2slm, process cycle number 110;
TMA-O
3preparation Al
2o
3stage: 220 ℃ of reaction temperatures, reaction pressure 1Torr, process cycle 5s, 30 ℃ of TMA source temperature, carrier gas flux 2slm, O
3concentration 250g/m
3, O
3flow 10slm, process cycle number 200;
Adopt the crystalline silicon that has alundum (Al2O3) passivating film (structure is as Fig. 1) that as above prepared by technique, Al2O3 passivation layer gross thickness is 28nm, the thickness of its second layer alundum (Al2O3) passivating film 2 is 18nm, the thickness of ground floor alundum (Al2O3) passivating film 3 is 10nm, and ground floor alundum (Al2O3) passivating film density is 3.1g/cm
3; Second layer alundum (Al2O3) passivating film density is 2.8g/cm
3..Through 800 ℃, after 3s high-temperature technology is processed, film surface occurs without bubble.Without heat treated Al
2o
3after the SiNx cap layer 1 of upper deposition one deck 80nm (pecvd process), after same high-temperature technology is processed, after same high-temperature technology is processed, laminate film surface also occurs without bubble.
The above is only preferred implementation of the present utility model; should be understood that; for those skilled in the art; do not departing under the prerequisite of the utility model know-why; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (5)
1. a crystalline silicon that has alundum (Al2O3) passivating film, is characterized in that,
Described crystalline silicon comprises silicon substrate, and the ground floor alundum (Al2O3) passivating film of arranging successively from silicon substrate, second layer alundum (Al2O3) passivating film and SiNx cap layer;
Described ground floor alundum (Al2O3) passivation film thickness is less than second layer alundum (Al2O3) passivation film thickness.
2. crystalline silicon according to claim 1, is characterized in that, described silicon substrate is p-type crystalline silicon or N-shaped crystalline silicon.
3. crystalline silicon according to claim 1, is characterized in that, described ground floor alundum (Al2O3) passivation film thickness is 4～15nm; Second layer alundum (Al2O3) passivation film thickness is 8～25nm.
4. crystalline silicon according to claim 1, is characterized in that, described ground floor alundum (Al2O3) passivating film density is 3.0～3.3g/cm
3; Second layer alundum (Al2O3) passivating film density is 2.5～2.9g/cm
3.
5. crystalline silicon according to claim 1, is characterized in that, described SiNx cap layer thickness is 75-85nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320603535.9U CN203573989U (en) | 2013-09-25 | 2013-09-25 | Crystalline silicon having aluminium oxide passive film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320603535.9U CN203573989U (en) | 2013-09-25 | 2013-09-25 | Crystalline silicon having aluminium oxide passive film |
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| Publication Number | Publication Date |
|---|---|
| CN203573989U true CN203573989U (en) | 2014-04-30 |
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|---|---|---|---|
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107831564A (en) * | 2017-09-19 | 2018-03-23 | 昆明理工大学 | A kind of aluminium alundum (Al2O3) sandwich type infrared filter |
| CN112563370A (en) * | 2020-12-04 | 2021-03-26 | 通威太阳能（安徽）有限公司 | Single crystal PERC crystal silicon cell back passivation preparation process and PERC solar cell |
| CN113097341A (en) * | 2021-03-31 | 2021-07-09 | 通威太阳能（安徽）有限公司 | PERC battery, AlOx coating process thereof, multi-layer AlOx back passivation structure and method |
| CN114944434A (en) * | 2022-05-25 | 2022-08-26 | 三一集团有限公司 | Crystalline silicon solar cell, preparation method thereof and photovoltaic module |
| CN117038799A (en) * | 2023-10-07 | 2023-11-10 | 正泰新能科技有限公司 | BC battery preparation method and BC battery |
-
2013
- 2013-09-25 CN CN201320603535.9U patent/CN203573989U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107831564A (en) * | 2017-09-19 | 2018-03-23 | 昆明理工大学 | A kind of aluminium alundum (Al2O3) sandwich type infrared filter |
| CN112563370A (en) * | 2020-12-04 | 2021-03-26 | 通威太阳能（安徽）有限公司 | Single crystal PERC crystal silicon cell back passivation preparation process and PERC solar cell |
| CN113097341A (en) * | 2021-03-31 | 2021-07-09 | 通威太阳能（安徽）有限公司 | PERC battery, AlOx coating process thereof, multi-layer AlOx back passivation structure and method |
| CN113097341B (en) * | 2021-03-31 | 2023-10-31 | 通威太阳能（安徽）有限公司 | A PERC battery, its AlOx coating process, multi-layer AlOx back passivation structure and method |
| CN114944434A (en) * | 2022-05-25 | 2022-08-26 | 三一集团有限公司 | Crystalline silicon solar cell, preparation method thereof and photovoltaic module |
| CN114944434B (en) * | 2022-05-25 | 2024-03-08 | 三一硅能(株洲)有限公司 | Crystalline silicon solar cell, preparation method thereof and photovoltaic module |
| CN117038799A (en) * | 2023-10-07 | 2023-11-10 | 正泰新能科技有限公司 | BC battery preparation method and BC battery |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: North China Science and technology group Limited by Share Ltd. Address before: 100015 Jiuxianqiao Chaoyang District, East Beijing Road, building M2, floor 1, No. 2 Patentee before: BEIJING SEVENSTAR ELECTRONIC Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180328 Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Address before: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: North China Science and technology group Limited by Share Ltd. |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140430 |
|
| CX01 | Expiry of patent term |