CN203380772U - 化学机械研磨修整器 - Google Patents
化学机械研磨修整器 Download PDFInfo
- Publication number
- CN203380772U CN203380772U CN201320207271.5U CN201320207271U CN203380772U CN 203380772 U CN203380772 U CN 203380772U CN 201320207271 U CN201320207271 U CN 201320207271U CN 203380772 U CN203380772 U CN 203380772U
- Authority
- CN
- China
- Prior art keywords
- abrasive grains
- layer
- cmp trimmer
- protruding tip
- cmp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000126 substance Substances 0.000 title abstract description 15
- 238000005498 polishing Methods 0.000 title abstract description 9
- 238000000227 grinding Methods 0.000 claims abstract description 99
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000002245 particle Substances 0.000 claims abstract description 16
- 239000006061 abrasive grain Substances 0.000 claims description 209
- 239000010410 layer Substances 0.000 claims description 199
- 239000011230 binding agent Substances 0.000 claims description 72
- 229910000679 solder Inorganic materials 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 11
- 239000003082 abrasive agent Substances 0.000 claims description 10
- 239000010432 diamond Substances 0.000 claims description 10
- 229910003460 diamond Inorganic materials 0.000 claims description 10
- 239000010935 stainless steel Substances 0.000 claims description 10
- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011888 foil Substances 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 208000034189 Sclerosis Diseases 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910001069 Ti alloy Inorganic materials 0.000 description 6
- 229910000906 Bronze Inorganic materials 0.000 description 5
- BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical compound [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 description 5
- 239000010974 bronze Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000029052 metamorphosis Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KCGHDPMYVVPKGJ-UHFFFAOYSA-N [Ti].[Cu].[Sn] Chemical compound [Ti].[Cu].[Sn] KCGHDPMYVVPKGJ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102206277 | 2013-04-08 | ||
TW102206277U TWM465659U (zh) | 2013-04-08 | 2013-04-08 | 化學機械硏磨修整器 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203380772U true CN203380772U (zh) | 2014-01-08 |
Family
ID=49869298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201320207271.5U Expired - Lifetime CN203380772U (zh) | 2013-04-08 | 2013-04-23 | 化学机械研磨修整器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20140308883A1 (zh) |
CN (1) | CN203380772U (zh) |
TW (1) | TWM465659U (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104084884A (zh) * | 2014-07-03 | 2014-10-08 | 南京三超金刚石工具有限公司 | 一种cmp片状研磨修整器及其生产方法 |
CN106625248A (zh) * | 2017-01-26 | 2017-05-10 | 北京清烯科技有限公司 | 具有大钻石单晶的高平坦度化学机械研磨垫修整器 |
CN106826601A (zh) * | 2017-01-26 | 2017-06-13 | 北京清烯科技有限公司 | 制造具有大钻石单晶的化学机械研磨垫修整器之方法 |
CN106826600A (zh) * | 2017-01-26 | 2017-06-13 | 福建自贸试验区厦门片区展瑞精芯集成电路有限公司 | 组合式之大钻石单晶化学机械研磨修整器的制造方法 |
CN107020574A (zh) * | 2016-02-01 | 2017-08-08 | 中国砂轮企业股份有限公司 | 化学机械研磨修整器及其制造方法 |
CN109454557A (zh) * | 2017-09-06 | 2019-03-12 | 咏巨科技有限公司 | 抛光垫修整器及其制造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140120724A1 (en) * | 2005-05-16 | 2014-05-01 | Chien-Min Sung | Composite conditioner and associated methods |
TWI583496B (zh) * | 2013-05-09 | 2017-05-21 | 中國砂輪企業股份有限公司 | 化學機械研磨修整器之尖點檢測方法及裝置 |
JP5954293B2 (ja) * | 2013-10-17 | 2016-07-20 | 信越半導体株式会社 | 研磨用の発泡ウレタンパッドのドレッシング装置 |
US9818512B2 (en) * | 2014-12-08 | 2017-11-14 | Vishay Dale Electronics, Llc | Thermally sprayed thin film resistor and method of making |
WO2019071053A1 (en) * | 2017-10-04 | 2019-04-11 | Saint-Gobain Abrasives, Inc. | ABRASIVE ARTICLE AND ITS TRAINING METHOD |
TWI674947B (zh) * | 2018-04-19 | 2019-10-21 | 智勝科技股份有限公司 | 研磨墊、研磨墊的製造方法及研磨方法 |
CA3107406A1 (en) * | 2018-07-23 | 2020-01-30 | Saint-Gobain Abrasives, Inc. | Abrasive article and method for forming |
US12226876B2 (en) | 2019-04-03 | 2025-02-18 | Saint-Gobain Abrasives, Inc. | Abrasive article, abrasive system and method for using and forming same |
KR102268582B1 (ko) * | 2019-07-15 | 2021-06-24 | 신한다이아몬드공업 주식회사 | Cmp 패드 컨디셔너 제조방법 및 이를 이용한 cmp 패드 컨디셔너 |
TWI806466B (zh) * | 2022-03-03 | 2023-06-21 | 中國砂輪企業股份有限公司 | 拋光墊修整器及其製造方法 |
-
2013
- 2013-04-08 TW TW102206277U patent/TWM465659U/zh not_active IP Right Cessation
- 2013-04-23 CN CN201320207271.5U patent/CN203380772U/zh not_active Expired - Lifetime
-
2014
- 2014-04-08 US US14/248,163 patent/US20140308883A1/en not_active Abandoned
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104084884A (zh) * | 2014-07-03 | 2014-10-08 | 南京三超金刚石工具有限公司 | 一种cmp片状研磨修整器及其生产方法 |
CN107020574A (zh) * | 2016-02-01 | 2017-08-08 | 中国砂轮企业股份有限公司 | 化学机械研磨修整器及其制造方法 |
CN106625248A (zh) * | 2017-01-26 | 2017-05-10 | 北京清烯科技有限公司 | 具有大钻石单晶的高平坦度化学机械研磨垫修整器 |
CN106826601A (zh) * | 2017-01-26 | 2017-06-13 | 北京清烯科技有限公司 | 制造具有大钻石单晶的化学机械研磨垫修整器之方法 |
CN106826600A (zh) * | 2017-01-26 | 2017-06-13 | 福建自贸试验区厦门片区展瑞精芯集成电路有限公司 | 组合式之大钻石单晶化学机械研磨修整器的制造方法 |
CN109454557A (zh) * | 2017-09-06 | 2019-03-12 | 咏巨科技有限公司 | 抛光垫修整器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20140308883A1 (en) | 2014-10-16 |
TWM465659U (zh) | 2013-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN203380772U (zh) | 化学机械研磨修整器 | |
CN1867428B (zh) | 由自规避磨粒阵列制造的磨具 | |
Liu et al. | Grinding wheels for manufacturing of silicon wafers: a literature review | |
CN203390712U (zh) | 化学机械研磨修整器 | |
US9067302B2 (en) | Segment-type chemical mechanical polishing conditioner and method for manufacturing thereof | |
US20060254154A1 (en) | Abrasive tool and method of making the same | |
TWI530361B (zh) | 化學機械研磨修整器及其製法 | |
US20150283672A1 (en) | Chemical mechanical polishing conditioner having different heights | |
TWI568538B (zh) | 化學機械硏磨修整器及其製法 | |
CN106826601A (zh) | 制造具有大钻石单晶的化学机械研磨垫修整器之方法 | |
CN102049737A (zh) | 抛光垫修整器 | |
CN105940484B (zh) | 衬垫调节器制造方法及衬垫调节器 | |
CN109702649A (zh) | 化学机械研磨修整器的制造方法 | |
CN202952160U (zh) | 一种化学机械抛光修整器 | |
CN202952159U (zh) | 化学机械研磨修整器 | |
CN107020574A (zh) | 化学机械研磨修整器及其制造方法 | |
CN106607759A (zh) | 混合式化学机械研磨修整器 | |
CN106625248A (zh) | 具有大钻石单晶的高平坦度化学机械研磨垫修整器 | |
CN110434773B (zh) | 一种环抛机用大面积蜂窝状超硬磨盘和修正盘的制作方法 | |
JP2018122369A (ja) | 板ガラスの製造方法、板ガラスの製造装置 | |
TWI286097B (en) | Polishing tool and method for making the same | |
TWI806466B (zh) | 拋光墊修整器及其製造方法 | |
TW201100198A (en) | Assembly type trimmer | |
CN102990529A (zh) | 化学机械抛光垫双面修整盘 | |
CN110871407A (zh) | 抛光垫修整器及化学机械平坦化的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHENZHEN SONGYANG MICROELECTRONIC TECHNOLOGY CO., Free format text: FORMER OWNER: SONG JIANMIN Effective date: 20140307 |
|
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TAIWAN, CHINA TO: 518000 SHENZHEN, GUANGDONG PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140307 Address after: 518000, Guangdong, Shenzhen province Longgang District Bantian Street snow community 148 snow road south, building B, 1 floor Patentee after: SHENZHEN SONGYANG MICROELECTRONIC TECHNOLOGY Co.,Ltd. Address before: The way China freshwater area Taiwan New Taipei 32 lane number 4 Patentee before: Song Jianmin |
|
TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20140108 |
|
CX01 | Expiry of patent term |