201100198 六、發明說明： 【發明所屬之技術領域】 本發明係、有關-種修整器，尤其是有關CMP拋光墊的组合式 修整器及其製法。 【先前技術】 化學機械拋光(Chemical Mechanical Planarization ，CMP) 疋目前半導體晶圓表面平坦化的製程中最受矚目的技術。在化學 〇 機械拋光製程中，拋光塾的功能是將拋光液穩定而均勻地輸送至 晶圓與拋光墊之間，在化學蝕刻與機械磨削兩者相互作用下，將 日日片上凸出的沈積層移除。 為了達到晶圓加工量產的需求及維持品質的穩定性，必須利 用鑽石修整器（Diamond dresser)在化學機械拋光的過程中適 時地對拋光墊進行修整，除了移除表面之拋光副產物，恢復拋光 墊的粗糙面，改善其容納漿料的能力，並恢復拋光墊表面的孔洞 〇 及其把持、運送拋光液之能力，如此可以節省拋光墊成本，並可 達到晶圓量產時品質穩定的需求。 傳統的鑽石修整器是將平均粒徑的鑽石粒固定在金屬盤 上，這種鑽石修整器適合修整硬式的拋光墊(如IC1000等）。傳 統修整器的功能不僅要移除拋光晶圓時產生的廢料，更進一步的 需要切削一層拋光墊，使拋光墊恢復一定的粗糙度，但是這種傳 統類型的鑽石修整器並不適用於45奈米（nm)以下的qjp製程。 由於積體電路的線寬日趨微小’例如2006年開始執行65奈米 201100198 (nm)的製程，晶圓表面平坦化及平滑度的要求就越來越高，相 對修整拋光墊的修整器要求也愈來愈高。預計於2〇1〇年之45 nm 的製程，必須以極低的壓力進行拋光才能避免磨穿奈米級的銅線 及脆弱的低介電常數(Low K)電阻層。因此修整後的拋光墊需要 更高的平整性，且需配合大尺吋晶圓之需求重新設計。未來的鑽 石修整器除了修整器之鑽石顆粒分佈規則外，尖錐的頂點高度 (Leveling)要求也更高；除此之外，修整器也需要在拋光墊上刻 〇 劃出更細微更均勻的刻紋，但相反的，修整器對拋光墊的移除率 更低，這樣的要求是傳統修整器無法做到的。 有各種不同修整器的專利，例如台灣專利Ϊ228066揭示一種 研磨布用修整器及其使用之研磨布的修整方法，包括一金屬台設 置有δ周卽機構，以調節全部或一部分的磨石顆粒群中以多數個磨 石顆粒的前端所分別形成的基準面的高低差。 •台灣公開專利200821093揭示的鑽石修整器，包括在各鑽石 ❹砥粒黏接部上，各自黏接有不同種類的鑽石砥粒，鑽石砥粒黏接 部與修整器基板之間是藉由螺栓固定或黏接劑固定。 美國專利US6, 054,183、揭示的修整器，是在一基板上形成 複數鑽石粒及一層CVD鑽石；複數鑽石粒被CVD鑽石包覆而被固 定於基板表面。 國際專利公開號WO00/64630 ’揭示一研磨層包括多數磨粒， 该磨粒包含有機樹脂（〇rganic resin)、金屬鹽（Metai salt) 及平均散佈於多數磨粒之間的鑽石磨粒。 4 201100198 美國公開專利US20060128288揭示的修整器，包括多數鑽石 顆粒被一金屬黏結劑層固定於一金屬基板。 日本么開專利JP2006-315088揭示的修整器，包括一圓盤狀 基台結合多數圓形的PCD鑽石片。 一般修整器的直徑約是1〇8公厘（mm)的大盤子，因為面積大 所以變形量也大，較不容易結合各種不狀小、形狀、材料的磨 粒，且使多數研磨顆粒的頂點在同一高度，且大面積的修整器的 〇 價錢較高。 【發明内容】 為了使較大面積的修整器更容易結合各種不同大小、形狀、 材料的磨粒，且使多數研磨顆粒的頂點在同一高度，而提出本發 明。 本發明的主要目的，在提供一種組合式修整器，使一大基板 ❹的同-研磨端面結合錄具有練的小基板，較容紐多數磨粒 的切削端在同-高度，且更容易結合各種不同大小、形狀、材料 的磨粒。 本發明的其他目的、功效’請參晒式及實施例，詳細說明 如下。 【實施方式】 如圖1、2所示，本發明第一實施例的組合式整修器i，尤 其是作為CMP抛光塾的修整器者，包括一大基板u及複數研磨 單元12所組成。 如圖2所示，大基板1丨設有一結合面n〇、底面U1及對 5 201100198 概她112;物軌川分別 _研磨早心，複數研磨單元12突出結合面⑽ 研磨早兀12與大基板η之間藉由結合劑13固定社人。 /數研磨單元12分別包括—小基板12〇及複數練121· 小基板120的一面122結合複數磨㈣；磨粒121且有一可舒 一工件進行婦丨_端123;小基板⑽相軸_複_201100198 VI. Description of the Invention: [Technical Field] The present invention relates to a trimmer, and more particularly to a combined dresser for a CMP pad and a method of manufacturing the same. [Prior Art] Chemical Mechanical Planarization (CMP) is currently the most attractive technology in the process of planarizing semiconductor wafer surfaces. In the chemical 〇 mechanical polishing process, the function of polishing enamel is to stably and uniformly transfer the polishing liquid between the wafer and the polishing pad, and the embossed on the day and the day under the interaction of chemical etching and mechanical grinding. The sediment layer is removed. In order to meet the demand for wafer processing and to maintain the stability of the quality, it is necessary to use a diamond dresser to trim the polishing pad in a timely manner during the chemical mechanical polishing process, except to remove the polishing by-products of the surface. The rough surface of the polishing pad improves its ability to hold the slurry and restores the hole on the surface of the polishing pad and its ability to hold and transport the polishing liquid. This saves the cost of the polishing pad and achieves stable quality when the wafer is mass-produced. demand. The traditional diamond dresser is to fix the average particle size of the diamond particles on a metal plate. This diamond dresser is suitable for trimming hard polishing pads (such as IC1000). The function of the traditional dresser is not only to remove the waste generated when polishing the wafer, but also to cut a polishing pad to restore the roughness of the polishing pad, but this traditional type of diamond dresser is not suitable for 45 The qjp process below meters (nm). Since the line width of the integrated circuit is becoming smaller and smaller, for example, the process of 65nm 201100198 (nm) is started in 2006, the wafer surface flattening and smoothness requirements are getting higher and higher, and the trimming requirements of the polishing pad are also relatively high. More and more high. The 45 nm process, which is expected to be in the next year, must be polished at very low pressure to avoid wear through the nano-scale copper wire and the fragile low dielectric constant (Low K) resistance layer. As a result, the finished polishing pad requires higher flatness and needs to be redesigned to meet the needs of large-size wafers. In addition to the rule of diamond particle distribution of the dresser, the diamond dresser of the future has higher requirements for the leveling of the tip. In addition, the dresser needs to be engraved on the polishing pad to make a finer and more uniform engraving. The pattern, but on the contrary, the dresser removes the polishing pad at a lower rate, which is not possible with conventional dressers. There are various different types of dresser patents, for example, Taiwan Patent No. 228066 discloses a dressing device for a polishing cloth and a dressing method for the polishing cloth used therefor, comprising a metal table provided with a δ circumference mechanism for adjusting all or a part of the group of the grinding stone particles. In the middle, the height difference of the reference plane formed by the front ends of the plurality of grindstone particles. • The diamond dresser disclosed in Taiwan Patent Publication No. 200821093 includes a different type of diamond enamel adhered to each diamond enamel bonding portion, and the diamond 黏 particle bonding portion and the dresser substrate are connected by bolts. Fix or fix the adhesive. A trimmer disclosed in U. International Patent Publication No. WO 00/64630' discloses that an abrasive layer comprises a plurality of abrasive particles comprising a rugganic resin, a metal salt and a diamond abrasive particle interspersed between a plurality of abrasive grains. 4 201100198 The finisher disclosed in U.S. Patent No. 2,060,128,288, the entire disclosure of which is incorporated herein by reference in its entire entire entire entire entire entire entire entire entire entire entire entire entire entire portion The dresser disclosed in Japanese Patent Publication No. JP2006-315088 includes a disc-shaped abutment combined with a plurality of circular PCD diamond pieces. Generally, the diameter of the dresser is about 1 〇 8 mm (mm). Because of the large area, the amount of deformation is also large, and it is not easy to combine various abrasive grains of small shape, shape and material, and the majority of the abrasive particles are The vertices are at the same height, and the large-area finisher has a higher price. SUMMARY OF THE INVENTION The present invention has been made in order to make it easier for a larger area dresser to combine abrasive grains of various sizes, shapes, and materials, and to have the apexes of a plurality of abrasive particles at the same height. The main object of the present invention is to provide a combined dresser that combines the same-grinding end face of a large substrate to have a small substrate to be machined, and the cutting end of the majority of the abrasive grains is at the same height and is easier to combine. Abrasive grains of various sizes, shapes and materials. Other objects and effects of the present invention will be described in detail below. [Embodiment] As shown in Figs. 1 and 2, the combined dresser i of the first embodiment of the present invention, particularly as a dresser for a CMP polishing crucible, comprises a large substrate u and a plurality of grinding units 12. As shown in FIG. 2, the large substrate 1 is provided with a bonding surface n〇, a bottom surface U1, and a pair of 5 201100198. She is 112; the object rails are respectively _grinding the early heart, and the plurality of grinding units 12 are protruding and bonding surfaces (10) are ground as early as 12 and large. The substrate η is fixed by the bonding agent 13 between the members. The number/grinding unit 12 includes a small substrate 12 and a plurality of sides 121 of the small substrate 120 combined with a plurality of grindings (4); the abrasive grains 121 and a workpiece for performing the wafers _ end 123; the small substrate (10) phase axis _ complex_
粒121的另一面124與大基板η的底面hi約在同-基準平面 14。大基板11形成複數穿透孔112的複數内壁113與複數研磨 單元12的複數外壁125分別具有複數凹凸結構114、126。當牡 合劑13渗入複數凹凸結構114、126内，分別固化結合複數^ J 113複數外壁125後’將使大基板u與複數研磨單元u 的結合更穩固，在研磨作業中複數研磨單元丨2相·大基板! i 無法垂直㈣，m此更不會脫離絲板u。複數内壁113、複 數外壁125中也可均不設複數凹凸結構114、126，或僅其中一 者設複數凹凸結構114、126。 如圖1所示，大基板丨丨的複數穿透孔112與複數研磨單元 12的剖面可為圓形或多邊形，例如正方形等形狀。 本實施例的複數研磨單元12分別比大基板丨丨高，藉由複數 研磨單元12的高度’決定複數磨粒121的複數切削端123突出 大基板11的結合面110的高度《複數切削端123突出大基板u 的高度差異在20微米内，使複數切削端123與一平面15的高 度差異在20微米内。複數切削端123突出大基板11的結合面 201100198 110的南度為〇_ 05-5厘米。 如圖2、3所示’本發明第二實施例的組合式整修器2與上 述第-實施例的組合式修整器i的結構相比較，除了大基板Μ 的複數穿透孔212呈錐狀，其孔徑為上寬下窄，其内壁如的 傾斜角度為1度至15度的形狀不同外，其餘結構大致相同。大 基板21設有-結合面210、底® 211及對應於複數研磨單元12 的複數穿航212 ’大基板21形成複數穿透孔212的複數内壁 〇 213也具有與複數凹凸結構126相對的複數凹凸結構214 ;複數 研磨單元12分別置於複數穿透孔112的内，複數磨粒121的另 一面124分別卡固的嵌入複數穿透孔212孔徑較窄的下端，且 與底面211在同-基準平面14，再藉由結合劑22固定結合。在 研磨作業中複數研磨單元12受壓力時要避免垂直移動，複數穿 透孔212呈錐狀的目的是要使複數研磨單元12受壓力時，無法 往複數穿透孔212錐度小的那-邊移動而更加牢固。複數内壁 〇 213、複數外壁125中也可均不設複數凹凸結構214、126，或僅 其中一者設複數凹凸結構214、126。 如圖2、4A、4B所示’本發明第三實施例的組合式整修器3 與上述第-實施綱組合式修㈣丨的結構相比較，除了複數 研磨單兀31分別比大基板11短，且藉由一模板32的厚度控制 複數研磨單元31突出大基板11的結合面11〇的高度不同外， 其餘結構大致相同。複數研磨單元31也由複數小基板31〇結合 複數磨粒311所組成；小基板310的一面312結合複數磨粒 201100198 3U，磨粒311具有一可對一工件進行切削的切削端313 ;小基 板310相對於設有複數磨粒311的另-面314置於大基板11的 穿透孔112内，另一面314高於底Φ 111 ;結合劑13封閉大基 板11的底φ ill的穿透孔112。大基板η形成複數穿透孔112 的複數内壁113與複數研磨單元31的複數外壁315分別具有相 對的複數凹凸結構114、316。複數内壁213、複數外壁315中 句不。又複數凹凸結構214、316，或僅其中一者設複數凹凸 ^ 結構214、316。模板232可為金屬板。 如圖4Β所示，本實施例製作時，係使模板32結合大基板 U，將複數研磨單元31的切削端313分別穿過大基板u的複 數穿透孔112及穿入模板32,利用模板32的厚度控制複數研磨 單几31的突出量，再由大基板u的複數穿透孔112注入結合 劑13，使大基板11固定結合複數研磨單元31，然後再使模板 ◎ 32脫離大基板11，形成如圖4A所示的組合式修整器3。 如圖2、5所示，本發明第四實施例的組合式整修器4與上 述第一貫施例的組合式修整器1的結構相比較，除了大基板41 °又有複數谷置槽411取代大基板η的複數穿透孔Η?外，其餘 、、-。構大致相同。且大基板41形成複數容置槽4Π的複數内壁412 也具有複數凹凸結構413 ;大基板41的複數容置槽411分別容 置複數研磨單元12，複數研磨單元丨2突出結合面41〇 ;複數研 磨單元12與大塞板11之間藉由結合劑13固定結合。小基板12〇 相對於設有該複數磨粒121的另一面124分別與大基板41的形 201100198 成複數容置槽411底部的複數底壁414在同一基準平面14。 如圖5、6所示，本發明第五實施例的組合式整修器5與上 述第四實施例的組合式修整器4的結構相比較，除了大基板51 的複數容置槽511的槽徑較大基板41的複數容置槽mi的槽徑 小，且略小於小基板120的外徑之外，其餘結構大致相同。大 基板51的複數容置槽511分別容置複數研磨單元12;複數研磨 單元12與大基板11之間藉由緊配結合的方式固定結合。本實 Ο 施例是將研磨單元12以機械力擠壓入金屬製的大基板51的容 置槽511内，利用凹凸結構的變形量固定研磨單元12，最後也 可以再用結合劑將空隙補滿。 如圖5、7所示，本發明第六實施例的組合式整修器6與上 述第四實施例的組合式修整器4的結構相比較，除了大基板61 的複數容置槽611的深度較大基板41的複數容置槽οι的深度 長，且大於小基板120的高度之外，其餘結構大致相同。大基 ° 板61的複數容置槽611分別容置複數研磨單元12;複數研磨單 兀12與大基板61之間藉由結合劑丨3固定結合。複數小基板J 2 〇 相對於設有該複數磨粒121的另一面124分別與大基板61的形 成複數谷置槽6Π底部的複數底壁612有一段距離；結合劑a 分別填充於複數磨粒121的另一面124與複數底壁612之間。 如圖3、8所示，本發明第七貫施例的組合式整修器7與上 述第二實施例的組合式修整器2的結構相比較，除了大基板71 叹有複數容置槽711取代大基板21的複數穿透孔212外，其餘 201100198 結構大致相同。且複數容置槽711的槽徑為上寬下窄的形狀， 其内壁713的傾斜角度為！度至15度；該小基板12〇相對於設 有該複數磨粒121的另—面124分別卡固的嵌入該複數容置槽 711的槽徑較窄的下端，複數研磨單元12突出結合面71〇 ;大 基板71形成複數容置槽711的複數内壁713也具有複數凹凸結 構714 ;複數研磨單元12與大基板71之間藉由結合劑22固定 結合。小基板120相對於設有該複數磨粒121的另一面124分 別與大基板71的形成複數容置槽711底部的複數底壁715在同 一基準平面14。 如圖9所示，本發明第八實施例的組合式整修器8，包括 一大基板81及複數研磨單元82所組成，其大基板81及複數研 磨單元82利用結合劑83結合或緊配結合的結構，可分別如前 述本發明第一至七實施例的組合式整修器1、2、3、4、5、6、7 所示者。本實施例的大基板81周緣内側設有等間隔環狀排列的 8個研磨單元82，且間隔環狀排列的8個研磨單元82的内側設 有等間隔排列的4個研磨單元82。本實施例複數研磨單元82 特殊的排列方式可避開大基板81下端面設置的螺孔。 本發明的磨粒的材料可為人造或非人造鑽石、多晶鑽石 (PCD)、立方晶氮化侧(CBN)、多晶立方氮化爛(pcbn)、最硬結 晶體、多晶材料、或上述材料的混合材料等所組成。本發明的 磨粒可以利用尚溫高壓結合、硬焊、燒結、電鍍、塑膠膠合或 陶瓷結合等方法結合小基板。 201100198 本發明的大基板的材料包含金屬、金屬合金、塑膠材料 (Polymer)、陶製品、碳製品、及上述材料的混合物/以Μ乩 不鎮鋼材料為佳。 本發明的結合劑的材料包含金屬、金屬合金、塑膠材料 (Polymer)、喊將、及上述材料的混合物，其巾㈣勝材料 為實施例代表，此外也可包含焊接合金材料。 本發明的大基板可為圓盤狀，直徑約9()_12()厘米（咖）。 〇小基板可為圓盤狀’直徑約1G-3G厘米，以2G厘米較佳。磨粒 的大小為lGG-_微米（miGIOn)，則微錄佳。本發明 大基板的較佳實施例為不銹鋼材質；結合劑的較佳實施例可為樹 脂材料；磨粒與小基板固定方式的較佳»施例可藉由樹脂膠合或 藉由含有鉻、鈦的銅鋅合金結合；小基板的外表面有—含鎳的電 鑛層。 〇 本發侧驗料龄法，絲作絲研料元，小的研 磨單τα父容易使多數磨粒的切削端在同一高度，再使一大基板 結合複數研磨單元成為一大面積的組合式修整 器，較容易使大 面積組合式修整器的多數磨粒的切削端在同一高度。本發明的 疋製作小的研磨單元成本較低，且組合式修整器可視需要 憂化不同的磨粒’例如組合式修整器的外圈可以用粒度較大的 鑽石’内圈可以用粒度較小的鑽石；或是外圈可以用切削能力 差仁車又耐磨’晶形完整的鑽石，内圈可以用切削能力好，但 疋不耐磨，晶形較不好的鑽石。同一小研磨單元的鑽石顆粒大 11 201100198 小、形狀、材料相同，但組合式修整器内的複數研磨單元的鑽 石顆粒大小、形狀、材料可相同或不相同。利用複數研磨单元 組合成一較大的組合式修整器，可控制組合式修整器的切削速 度及磨耗率。 以上所記載，僅為利用本發明技術内容之^ ^ 悉本項技藝者運用本發明所為之修飾、變貫施例，任何熟 之專利範圍，而不限於實施例所揭示者。，皆屬本發明主張 Ο 〇 12 201100198 【圖式簡單說明】 圖1為本發明第一實施例的組合式修整器的示意圖 圖2為圖1的AA剖面的示意圖。 圖3為本發明第二實施例的組合式修整器的剖面示专 圖4A為本發明第三實施例的組合式修整器的剖面示^ 圖4B製作為本發明第三實施例的組合式修整器的示=: 圖5為本發明第四實施例的組合式修整器的示意圖。“圖The other surface 124 of the particle 121 is approximately at the same-reference plane 14 as the bottom surface hi of the large substrate η. The plurality of inner walls 113 of the plurality of through holes 112 formed by the large substrate 11 and the plurality of outer walls 125 of the plurality of polishing units 12 respectively have a plurality of concave and convex structures 114, 126. When the oxant mixture 13 is infiltrated into the plurality of concave-convex structures 114, 126, respectively, the combination of the plurality of outer walls 125 of the composite layer J' will make the combination of the large substrate u and the plurality of grinding units u more stable, and the plurality of grinding units 丨 2 phase in the grinding operation · Large substrate! i Can't be vertical (4), m will not leave the wire u. The plurality of concave and convex structures 114 and 126 may not be provided in the plurality of inner walls 113 and the plurality of outer walls 125, or only one of the plurality of concave and convex structures 114 and 126 may be provided. As shown in Fig. 1, the cross section of the plurality of through holes 112 and the plurality of grinding units 12 of the large substrate 可 may be circular or polygonal, such as a square or the like. The plurality of polishing units 12 of the present embodiment are respectively higher than the large substrate, and the height of the plurality of polishing units 12 determines that the plurality of cutting ends 123 of the plurality of abrasive grains 121 protrude from the height of the bonding surface 110 of the large substrate 11 "the plurality of cutting ends 123" The difference in height of the protruding large substrate u is within 20 microns, so that the difference in height between the plurality of cutting ends 123 and a plane 15 is within 20 microns. The plurality of cutting ends 123 protrude from the joint surface of the large substrate 11. The south degree of the 201100198 110 is 〇_05-5 cm. As shown in Figs. 2 and 3, the combined refiner 2 of the second embodiment of the present invention is compared with the structure of the combined dresser i of the above-described first embodiment, except that the plurality of penetration holes 212 of the large substrate 呈 are tapered. The aperture is wide and narrow, and the inner wall has a shape with an inclination angle of 1 to 15 degrees, and the rest of the structure is substantially the same. The large substrate 21 is provided with a bonding surface 210, a bottom 211, and a plurality of through holes 212 corresponding to the plurality of polishing units 12. The plurality of substrates 21 form a plurality of through holes 212, and the plurality of inner walls 213 also have a plurality of opposing concave and convex structures 126. The concave-convex structure 214; the plurality of grinding units 12 are respectively disposed in the plurality of penetration holes 112, and the other surface 124 of the plurality of abrasive grains 121 is respectively fitted to the lower end of the narrow aperture of the plurality of penetration holes 212, and is the same as the bottom surface 211 The reference plane 14 is then fixedly bonded by a bonding agent 22. In the grinding operation, the plurality of grinding units 12 are prevented from moving vertically when subjected to pressure, and the plurality of penetrating holes 212 are tapered so that when the plurality of grinding units 12 are subjected to pressure, the side of the through hole 212 having a small taper cannot be reciprocated. Move and be stronger. The plurality of inner wall 〇 213 and the plurality of outer walls 125 may not be provided with a plurality of concavo-convex structures 214 and 126, or only one of them may be provided with a plurality of concavo-convex structures 214 and 126. As shown in Figs. 2, 4A, and 4B, the combined refiner 3 of the third embodiment of the present invention is compared with the structure of the above-described first-implemented combination (4), except that the plurality of polishing halves 31 are shorter than the large substrate 11 respectively. The other structures are substantially the same except that the height of the bonding surface 31 of the large substrate 11 is different by controlling the thickness of the template 32 to control the plurality of polishing units 31. The plurality of grinding units 31 are also composed of a plurality of small substrates 31 〇 combined with a plurality of abrasive grains 311; one side 312 of the small substrate 310 is combined with a plurality of abrasive grains 201100198 3U, and the abrasive grains 311 have a cutting end 313 capable of cutting a workpiece; 310 is placed in the penetration hole 112 of the large substrate 11 with respect to the other surface 314 provided with the plurality of abrasive grains 311, and the other surface 314 is higher than the bottom Φ 111; the bonding agent 13 closes the penetration hole of the bottom φ ill of the large substrate 11. 112. The plurality of inner walls 113 of the plurality of through holes 112 formed by the large substrate η and the plurality of outer walls 315 of the plurality of polishing units 31 have opposite complex concave and convex structures 114, 316, respectively. The plural inner wall 213 and the plural outer wall 315 do not. Further, the plurality of concave-convex structures 214, 316 or only one of them has a plurality of concave-convex structures 214, 316. The template 232 can be a metal plate. As shown in FIG. 4A, in the embodiment, the template 32 is combined with the large substrate U, and the cutting ends 313 of the plurality of polishing units 31 are respectively passed through the plurality of penetration holes 112 of the large substrate u and the template 32, and the template 32 is used. The thickness of the plurality of polishing sheets 31 is controlled, and the bonding agent 13 is injected from the plurality of through holes 112 of the large substrate u to fix the large substrate 11 to the plurality of polishing units 31, and then the template ◎ 32 is separated from the large substrate 11. A combined dresser 3 as shown in Fig. 4A is formed. As shown in FIGS. 2 and 5, the combined dresser 4 of the fourth embodiment of the present invention is compared with the structure of the combined dresser 1 of the first embodiment, except that the large substrate 41° has a plurality of valleys 411. Replacing the multiple penetration holes of the large substrate η, the rest, -. The structure is roughly the same. The plurality of inner walls 412 of the large substrate 41 forming the plurality of accommodating grooves 4 也 also have a plurality of concave and convex structures 413; the plurality of accommodating grooves 411 of the large substrate 41 respectively accommodate the plurality of polishing units 12, and the plurality of polishing units 丨2 protrude from the joint surface 41 〇; The polishing unit 12 and the large plug plate 11 are fixedly coupled by a bonding agent 13. The small substrate 12'' is opposite to the other surface 124 on which the plurality of abrasive grains 121 are provided, and is formed on the same reference plane 14 as the plurality of bottom walls 414 at the bottom of the plurality of accommodating grooves 411, respectively. As shown in FIGS. 5 and 6, the combined dresser 5 of the fifth embodiment of the present invention is compared with the structure of the combined dresser 4 of the fourth embodiment, except for the groove of the plurality of receiving grooves 511 of the large substrate 51. The groove diameter of the plurality of accommodating grooves mi of the larger substrate 41 is small and slightly smaller than the outer diameter of the small substrate 120, and the remaining structures are substantially the same. The plurality of accommodating grooves 511 of the large substrate 51 respectively accommodate the plurality of polishing units 12; the plurality of polishing units 12 and the large substrate 11 are fixedly coupled by tight fitting. In the embodiment, the polishing unit 12 is mechanically pressed into the accommodating groove 511 of the large metal substrate 51, and the polishing unit 12 is fixed by the deformation amount of the uneven structure. Finally, the void can be refilled with a bonding agent. full. As shown in FIGS. 5 and 7, the combined dresser 6 of the sixth embodiment of the present invention is compared with the structure of the combined dresser 4 of the fourth embodiment, except that the depth of the plurality of receiving grooves 611 of the large substrate 61 is higher. The depth of the plurality of accommodating grooves οι of the large substrate 41 is longer than the height of the small substrate 120, and the remaining structures are substantially the same. The plurality of accommodating grooves 611 of the large base plate 61 respectively accommodate the plurality of grinding units 12; the plurality of polishing dies 12 and the large substrate 61 are fixedly coupled by the bonding agent 丨3. The plurality of small substrates J 2 〇 are spaced apart from the other bottom surface 612 of the large substrate 61 forming the bottom of the plurality of valleys 6 〇 with respect to the other surface 124 provided with the plurality of abrasive grains 121; the bonding agent a is respectively filled in the plurality of abrasive grains The other side 124 of the 121 is between the plurality of bottom walls 612. As shown in FIGS. 3 and 8, the combined refiner 7 of the seventh embodiment of the present invention is compared with the structure of the combined dresser 2 of the second embodiment described above, except that the large substrate 71 is replaced by a plurality of accommodating grooves 711. The plurality of 201100198 structures are substantially identical except for the plurality of through holes 212 of the large substrate 21. Moreover, the groove diameter of the plurality of accommodating grooves 711 is a shape having an upper width and a lower width, and the inclination angle of the inner wall 713 is! The first substrate 12 〇 is fixed to the lower end of the plurality of accommodating grooves 711 with a narrow groove diameter, and the plurality of polishing units 12 protrudes from the joint surface. 71 〇; the plurality of inner walls 713 of the large substrate 71 forming the plurality of accommodating grooves 711 also have a plurality of concave-convex structures 714; the plurality of polishing units 12 and the large substrate 71 are fixedly coupled by the bonding agent 22. The small substrate 120 is on the same reference plane 14 as the plurality of bottom walls 715 of the large substrate 71 forming the bottom of the plurality of receiving grooves 711 with respect to the other surface 124 on which the plurality of abrasive grains 121 are provided. As shown in FIG. 9, the combined refiner 8 of the eighth embodiment of the present invention comprises a large substrate 81 and a plurality of polishing units 82. The large substrate 81 and the plurality of polishing units 82 are bonded or tightly bonded by a bonding agent 83. The structure may be as shown in the above-described combined dressers 1, 2, 3, 4, 5, 6, and 7 of the first to seventh embodiments of the present invention, respectively. The inner side of the large substrate 81 of the present embodiment is provided with eight polishing units 82 arranged at equal intervals in a ring shape, and four polishing units 82 arranged at equal intervals are provided inside the eight polishing units 82 arranged in a ring shape. In this embodiment, the plurality of polishing units 82 are arranged in a special manner to avoid the screw holes provided in the lower end surface of the large substrate 81. The material of the abrasive particles of the present invention may be artificial or non-artificial diamond, polycrystalline diamond (PCD), cubic nitride side (CBN), polycrystalline cubic nitride (pcbn), hardest crystal, polycrystalline material, or The above materials are composed of a mixed material or the like. The abrasive particles of the present invention can be combined with a small substrate by means of a combination of high temperature bonding, brazing, sintering, electroplating, plastic bonding or ceramic bonding. 201100198 The material of the large substrate of the present invention comprises a metal, a metal alloy, a plastic material, a ceramic product, a carbon product, and a mixture of the above materials. The material of the bonding agent of the present invention comprises a metal, a metal alloy, a plastic material, a shim, and a mixture of the above materials, and the material of the towel is represented by the embodiment, and may also include a solder alloy material. The large substrate of the present invention may be in the shape of a disk having a diameter of about 9 () - 12 () cm (coffee). The small substrate may be in the form of a disk having a diameter of about 1 G to 3 G cm, preferably 2 G cm. The size of the abrasive particles is lGG-_micron (miGIOn), which is better for micro-recording. The preferred embodiment of the large substrate of the present invention is made of stainless steel; the preferred embodiment of the bonding agent may be a resin material; the preferred method of fixing the abrasive particles to the small substrate may be by resin bonding or by containing chromium or titanium. The copper-zinc alloy is bonded; the outer surface of the small substrate has a nickel-containing electric ore layer. 〇 发 发 验 验 , , , , , , 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝 丝The dresser makes it easier to make the cutting ends of the majority of the abrasive particles of the large area combined dresser at the same height. The small grinding unit of the invention has low cost, and the combined dresser can be used to worry about different abrasive grains. For example, the outer ring of the combined dresser can use a diamond with a larger particle size. The diamond; or the outer ring can be cut with the ability of the car and wear-resistant 'crystal-complete diamonds, the inner ring can be used with good cutting ability, but not wear-resistant, crystal-shaped diamonds are not good. The diamond particles of the same small grinding unit are large 11 201100198 Small, shape and material are the same, but the size, shape and material of the diamond particles of the multiple grinding units in the combined dresser may be the same or different. The combination of a plurality of grinding units to synthesize a larger combined dresser controls the cutting speed and wear rate of the combined dresser. The above description is only intended to be a modification of the present invention by those skilled in the art, and the scope of the invention is not limited to the embodiments disclosed. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a combined dresser according to a first embodiment of the present invention. FIG. 2 is a schematic view showing a cross section taken along line AA of FIG. 3 is a cross-sectional view of a combined dresser according to a second embodiment of the present invention. FIG. 4A is a cross-sectional view of a combined dresser according to a third embodiment of the present invention. FIG. 4B is a third embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 5 is a schematic view of a combined dresser according to a fourth embodiment of the present invention. "Figure
圖6為本發明第五實施例的組合式修整器的剖面示专圖 圖7為本發明第六實施例的組合式修整器的剖面示咅曰 圖8為本發明第七實施例的組合式修整器的剖面示专^ 圖9為本發明第八實施例的組合式修整器的二回 【主要元件符號說明】 ’、思圖’ I、 2、3、4、5、6、7、8組合式修整器 II、 2卜 41、5卜 61、71、81 大基板 110、210、410、710 結合面 111、211底面 112、212穿透孔 113、213、412、713 内壁 114、214、126、316、413、714 凹凸結構 12、31、82研磨單元 120、310小基板 121、311磨粒 122、312 面 124、314 另一面 13、22、83結合劑 123、313切削端 125、315 外壁 14基準平面 15平面 32模板 41卜51卜611、711容置槽 414、612、715 底壁 13Figure 6 is a cross-sectional view showing a combined dresser according to a fifth embodiment of the present invention. Figure 7 is a cross-sectional view showing a combined dresser according to a sixth embodiment of the present invention. Figure 8 is a combination of a seventh embodiment of the present invention. FIG. 9 is a second embodiment of the combined dresser according to the eighth embodiment of the present invention. [Main component symbol description] ', thinking' I, 2, 3, 4, 5, 6, 7, 8 The combined dresser II, 2b 41, 5b 61, 71, 81 large substrate 110, 210, 410, 710 bonding surface 111, 211 bottom surface 112, 212 penetrates the inner walls 114, 214 of the holes 113, 213, 412, 713, 126, 316, 413, 714 concave and convex structure 12, 31, 82 polishing unit 120, 310 small substrate 121, 311 abrasive particles 122, 312 surface 124, 314 other surface 13, 22, 83 bonding agent 123, 313 cutting end 125, 315 Outer wall 14 reference plane 15 plane 32 template 41 卜 51 611, 711 accommodating grooves 414, 612, 715 bottom wall 13