CN202921106U - Gas filter device for polycrystalline silicon production process - Google Patents
Gas filter device for polycrystalline silicon production process Download PDFInfo
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- CN202921106U CN202921106U CN2012203981301U CN201220398130U CN202921106U CN 202921106 U CN202921106 U CN 202921106U CN 2012203981301 U CN2012203981301 U CN 2012203981301U CN 201220398130 U CN201220398130 U CN 201220398130U CN 202921106 U CN202921106 U CN 202921106U
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Abstract
The utility model discloses a gas filter device for a polycrystalline silicon production process. The gas filter device comprises an upper head, a straight cylinder part and a lower head which are sequentially connected from top to bottom, wherein a gas outlet for discharging a filtered gas is formed in the upper part of the filter device, a slag discharging hole for discharging waste slag is formed in the lower part of the filter device, a gas inlet for guiding a gas to be filtered in the straight cylinder is formed in the lower part of the straight cylinder part, a filter part is arranged above the gas inlet, and the filter part comprises a disk provided with through holes and ceramic filter cores arranged in the through holes. According to the gas filter device disclosed by the utility model, since the gas filter device with the ceramic filter cores is adopted, the gas filter device has the excellent characteristics of high temperature resistance and corrosion resistance, does not influence the quality of polycrystalline silicon; and the ceramic filter cores can be used for producing filter cores with different precisions according to the requirement on the filter precision, and are simple in forming and low in cost.
Description
Technical field
The utility model relates to production of polysilicon technology field, and more specifically, the utility model relates to a kind of gas-filtering device for production of polysilicon technique.
Background technology
China's present stage polysilicon project technology all belongs to the Siemens process technology more than 85%, in this technical process, have numerous systems need to carry out gas filtration.Specifically have: producing trichloro hydrosilicon by hydrogenation of silicon tetrachloride system, trichlorosilane synthesis system, reduction tail gas dry process recovery system etc.
The general filter that adopts is cloth envelop collector at present, and in process of production, finds that there is following several shortcoming in cloth envelop collector:
1, the cloth envelop collector resistance to elevated temperatures is poor.Especially in trichlorosilane synthesis system and producing trichloro hydrosilicon by hydrogenation of silicon tetrachloride system, find that cloth envelop collector is very easy to occur damaged, cause the filter effect degradation, finally cause follow-up system to stop up;
2, cloth envelop collector is easily damaged, rolls up with regard to causing the Dust Capacity in gas, finally causes product quality to occur declining to a great extent;
3, cloth envelop collector is expensive, and the filter material of import is at present converted on the finished product filter bag, and every square metre of price reaches more than 1000 yuan;
4, the filter material poor corrosion resistance of cloth envelop collector, support member easily corrosion in maintenance process simultaneously cause the maintenance difficulty, and the cost of overhaul is high.
The utility model content
The utility model one of is intended to solve the problems of the technologies described above at least to a certain extent or provides at least a kind of useful business to select.
For this reason, a purpose of the present utility model is to propose that a kind of strainability is good, cost is low, maintenance is used for the gas-filtering device of production of polysilicon technique easily.
The gas-filtering device that is used for production of polysilicon technique according to the utility model example, comprise the upper cover, vertical tube part and the low head that connect successively from top to bottom, wherein, the top of described filter is provided with for the gas outlet of discharging the gas after filtering and bottom and is provided with for the slag-drip opening of discharging waste residue, the bottom of described vertical tube part is provided with for import the air inlet of gas to be filtered in described straight tube, and the top of described air inlet is provided with filter house, and described filter house comprises the floral disc that is provided with through hole and is located at ceramic element in described through hole.
The gas-filtering device that is used for production of polysilicon technique according to the utility model example, be provided with the gas-filtering device of ceramic element due to employing, this filter has high temperature resistant, corrosion resistant good characteristic, and stable material quality, can not impact the polysilicon product quality; Ceramic element can produce the filter core of different accuracy, and the ceramic element moulding be simple according to the requirement of filtering accuracy, and large-scale production is easy, and is cheap.
In addition, the gas-filtering device that is used for production of polysilicon technique according to the above-mentioned example of the utility model can also have following additional technical characterictic:
Described through hole is a plurality of, and described a plurality of through holes are equipped with described ceramic element along the radial and axial even distribution of described floral disc in each described through hole.
The number of described through hole and described ceramic element is configured to flow control with described gas at 0.01～0.2m/s.
Described ceramic element is fixed on described floral disc by securing member, described securing member comprises retainer ring and gland, described retainer ring be welded on described floral disc and the endoporus of described retainer ring corresponding with described through hole, described gland snaps onto the top of described ceramic element and is connected that with described retainer ring described ceramic element is fixed in described through hole.
Described ceramic element is the aluminium oxide filter core.
The filtering accuracy of described aluminium oxide filter core is 800～1500 orders.
Described vertical tube part is provided with access hole, and described access hole is positioned at the top of described filter house.
Described gas outlet is located at the top of described upper cover and the bottom that described slag-drip opening is located at described low head.
Additional aspect of the present utility model and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present utility model.
Description of drawings
Above-mentioned and/or additional aspect of the present utility model and advantage are from obviously and easily understanding becoming the description of example in conjunction with following accompanying drawing, wherein:
Fig. 1 is the gas-filtering device structural representation that is used for production of polysilicon technique according to the utility model example;
Fig. 2 is the gas-filtering device ceramic element distribution schematic diagram that is used for production of polysilicon technique according to the utility model example;
Fig. 3 is the gas-filtering device ceramic element securing member schematic diagram that is used for production of polysilicon technique according to the utility model example;
Fig. 4 is the reduction tail gas dry process recovery system schematic diagram according to the utility model example;
Fig. 5 is the schematic flow sheet of the dry method recovery of the reduction tail gas that produces in production of polysilicon technique according to the utility model example;
Fig. 6 is the recovery process schematic diagram according to the reduction tail gas dry process recovery system of the utility model example.
The specific embodiment
The below describes example of the present utility model in detail, and the example of described example is shown in the drawings, and wherein same or similar label represents same or similar element or the element with identical or similar functions from start to finish.Be exemplary below by the example that is described with reference to the drawings, be intended to for explanation the utility model, and can not be interpreted as restriction of the present utility model.
in description of the present utility model, it will be appreciated that, term " " center ", " vertically ", " laterally ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", orientation or the position relationship of indications such as " counterclockwise " are based on orientation shown in the drawings or position relationship, only the utility model and simplified characterization for convenience of description, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as restriction of the present utility model.
In addition, term " first ", " second " only are used for describing purpose, and can not be interpreted as indication or hint relative importance or the implicit quantity that indicates indicated technical characterictic.Thus, one or more these features can be expressed or impliedly be comprised to the feature that is limited with " first ", " second ".In description of the present utility model, the implication of " a plurality of " is two or more, unless clear and definite concrete restriction is separately arranged.
In the utility model, unless clear and definite regulation and restriction are separately arranged, broad understanding should be done in the terms such as term " installation ", " being connected ", " connection ", " fixing ", for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be also to be electrically connected to; Can be directly to be connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can understand as the case may be the concrete meaning of above-mentioned term in the utility model.
In the utility model, unless clear and definite regulation and restriction are separately arranged, First Characteristic Second Characteristic it " on " or D score can comprise that the first and second features directly contact, can comprise that also the first and second features are not directly contacts but by the other feature contact between them.And, First Characteristic Second Characteristic " on ", " top " and " above " comprise First Characteristic directly over Second Characteristic and oblique upper, or only represent that the First Characteristic level height is higher than Second Characteristic.First Characteristic Second Characteristic " under ", " below " and " below " comprise First Characteristic directly over Second Characteristic and oblique upper, or only represent that the First Characteristic level height is less than Second Characteristic.
The below specifically describes the gas-filtering device that is used for production of polysilicon technique according to the utility model example at first by reference to the accompanying drawings.
As shown in Figure 1, the gas-filtering device that is used for production of polysilicon technique according to the utility model example comprises: the upper cover 10, vertical tube part 20 and the low head 30 that connect successively from top to bottom.
Wherein, the top of described filter is provided with for the gas outlet 11 of discharging the gas after filtering and bottom and is provided with for the slag-drip opening 31 of discharging waste residue, the bottom of vertical tube part 20 is provided with for import the air inlet 21 of gas to be filtered in described straight tube, and the top of air inlet 21 is provided with filter house, and filter house comprises the floral disc 22 that is provided with through hole and is located at ceramic element 23 in through hole.
Thus, according to the gas-filtering device that is used for production of polysilicon technique of the utility model example, owing to having adopted ceramic element, make filter have high temperature resistant, corrosion resistant good characteristic, and stable material quality can not impact the polysilicon product quality; Ceramic element 23 can produce the filter core of different accuracy, and ceramic element 23 moulding be simple according to the requirement of filtering accuracy, and large-scale production is easy, and is cheap.
Further contemplate cost and mass production problem, in one example, preferably, ceramic element 23 is the aluminium oxide filter core.Thus, the ceramic element 23 of this material both can satisfy high temperature resistant, corrosion resistant requirement, and easily large-scale production, can further reduce production costs.
In one example, as shown in Figure 2, through hole is a plurality of, and a plurality of through holes are equipped with ceramic element 23 along the radial and axial even distribution of floral disc 22 in each through hole.Thus, by a plurality of through holes are set, can filter the duct separately, arrange that according to the size of heat exchange area and floral disc 22 ceramic element 23 reaches filter effect, avoid occurring filtering that the duct stops up is whole out of use situation, improve the practicality of filter.
Consider the problem of gas volume and filter area, in one example, the number of through hole and ceramic element 23 is configured to flow control with described gas at 0.01～0.2m/s.Thus, gas is filtered more fully.
In one example, as shown in Figure 3, ceramic element 23 is fixed on floral disc 22 by securing member, described securing member comprises retainer ring 241 and gland 242, retainer ring 241 be welded on floral disc 22 and the endoporus of retainer ring 241 corresponding with through hole, gland 242 snaps onto the top of ceramic element 23 and is connected that with retainer ring 241 ceramic element 23 is fixed in through hole.Thus, ceramic element 23 can be fixed on floral disc 22, and fixed form is reasonable, conveniently dismantles, reduction maintenance difficulty is installed.
In one example, the filtering accuracy of described aluminium oxide filter core is 800～1500 orders.Thus, can filter out as required the larger dust of order number.
Advantageously, in one example, vertical tube part 20 is provided with access hole 25, and access hole 25 is positioned at the top of described filter house.Thus, by access hole 25 is set, can conveniently carry out trouble hunting, not need detaching equipment.
In one example, gas outlet 11 is located at the top of upper cover 10 and the bottom that slag-drip opening 31 is located at low head 30.Thus, can so that the deslagging of filter, save the process of detaching equipment.
Describe according to the application of gas-filtering device of the present utility model in reduction tail gas dry process recovery system below in conjunction with Fig. 4.
As shown in Figure 4, preferably, described reduction tail gas dry process recovery system comprises: eluting column 40, absorption system 50, adsorbent equipment 60 and the first filter 70.
Be provided with in adsorbent equipment 60 for described hydrogen being carried out the adsorbent of adsorption treatment, fall chlorosilane remaining in hydrogen and hydrogen chloride with further absorption.
The first filter 70 is used for described hydrogen is filtered, and to obtain high-purity hydrogen, wherein, the first filter 70 is according to the above-mentioned gas-filtering device that is used for production of polysilicon technique.
In one example, adsorbent equipment 60 can also be configured to the adsorbent that has adsorbed chlorosilane and hydrogen chloride is regenerated, thereby the regeneration gas that obtains discharging from adsorbent in the time of the adsorption capacity of recovery adsorbent, and reduction tail gas dry process recovery system also comprises: the second filter 80, wherein, the second filter 80 is according to the above-mentioned gas-filtering device that is used for production of polysilicon technique.The second filter 80 is used for described regeneration gas is filtered, and carries out bubbling drip washing to remove high chlorosilane and solid impurity wherein and to return to eluting column 40.
Because the gas-filtering device that be used for production of polysilicon technique above-mentioned according to the utility model has above-mentioned technique effect, therefore, above-mentioned reduction tail gas dry process recovery system also has corresponding technique effect, and can obtain high-purity hydrogen and high-purity regenerated gas according to this system.
Application during the below describes further combined with Fig. 5 the reduction tail gas that produces according to gas-filtering device of the present utility model in production of polysilicon technique dry method reclaims.
The dry method recovery of the reduction tail gas that produces in described production of polysilicon technique particularly, can comprise the following steps:
A) described reduction tail gas is carried out bubbling drip washing, to remove high chlorosilane and solid impurity wherein.
B) will absorb processing through the reduction tail gas of bubbling drip washing, to remove chlorosilane and hydrogen chloride wherein, obtain hydrogen.
C) described hydrogen is adsorbed to remove chlorosilane remaining in hydrogen and hydrogen chloride by adsorbent, and filters by the first filter 70, obtain high-purity hydrogen,
Wherein, the first filter 70 is gas-filtering device for production of polysilicon technique described according to above-mentioned example.
Owing to having above-mentioned technique effect according to the above-mentioned gas-filtering device that is used for production of polysilicon technique, therefore, the dry method recovery of the reduction tail gas that produces in above-mentioned production of polysilicon technique also has corresponding technique effect.
Thus, can obtain high-purity hydrogen by this dry method recovery.
The dry method recovery of the reduction tail gas that produces in described production of polysilicon technique in one example, is further comprising the steps of:
D) adsorbent that has adsorbed chlorosilane and hydrogen chloride is regenerated, the regeneration gas that obtains discharging from adsorbent when recovering the adsorption capacity of adsorbent.Wherein, the composition of regeneration gas is hydrogen, hydrogen chloride and Micro Amounts of Chlorine silane.
E) described regeneration gas is filtered by the second filter, obtain high-purity regenerated gas and return and carry out bubbling drip washing.
The second filter 80 is according to the above-mentioned gas-filtering device that is used for production of polysilicon technique.
Owing to having above-mentioned technique effect according to the above-mentioned gas-filtering device that is used for production of polysilicon technique, therefore, the dry method recovery of the reduction tail gas that produces in above-mentioned production of polysilicon technique also has corresponding technique effect.
Thus, can obtain high-purity regenerated gas.
In order to guarantee the normal operation of filter, improve filter efficiency, preferably, the intake air temperature that can control the first filter 70 is 25～40 ℃, and admission pressure is 0.05～0.5MPa, and charge flow rate is 5000～10000Nm
3/ h; The intake air temperature of the second filter 80 is 80～150 ℃, and admission pressure is 0.05～0.2MPa, and charge flow rate is 500～2000Nm
3/ h.
Flow process below in conjunction with embodiment and the above-mentioned reduction tail gas dry process recovery method of accompanying drawing specific descriptions.
Embodiment 1
As shown in Figure 6, the tail gas that at first will reduce carries out bubbling drip washing by eluting column 40, is used for reduction tail gas is carried out drip washing to remove high chlorosilane and solid impurity wherein, and reduction tail gas component is chlorosilane, hydrogen and a small amount of hydrogen chloride.
Reduction tail gas after drip washing is passed into absorption system 50 absorb desorption, so that the reduction tail gas after drip washing is absorbed processing, remove wherein chlorosilane and hydrogen chloride, obtain hydrogen (wherein containing micro-hydrogen chloride and Micro Amounts of Chlorine silane).Absorbed chlorosilane can further separate with hydrogen chloride, thereby obtains respectively chlorosilane and hydrogen chloride.Separate the chlorosilane that obtains and can again participate in reduction reaction after purifying, reacted reduction tail gas reclaims through the dry method recovery system again, forms recycling.The hydrogen chloride that separation obtains can be sent into the trichlorosilane synthesis system and prepare trichlorosilane, prepares trichlorosilane and also can again participate in reduction reaction after purifying, and reacted reduction tail gas reclaims through the dry method recovery system again, forms recycling.
The mixture of hydrogen, micro-hydrogen chloride and Micro Amounts of Chlorine silane is passed into micro-hydrogen chloride and the Micro Amounts of Chlorine silane that adsorbs to fall in the adsorbent equipment 60 that is provided with for the adsorbent that described hydrogen is carried out adsorption treatment wherein, obtain hydrogen.
Hydrogen is passed into the first filter 70 filter, controlling intake air temperature is 25～40 ℃, and admission pressure is 0.05～0.5MPa, and charge flow rate is 5000～10000Nm
3/ h, filtering accuracy is 800～1500 orders, obtains high-purity hydrogen.The high-purity hydrogen that obtains can participate in reduction reaction again, and reacted reduction tail gas reclaims through the dry method recovery system again, forms recycling.
With the absorption in adsorbent equipment 60 adsorbent of chlorosilane and hydrogen chloride regenerate, recover the adsorption capacity of adsorbent, obtaining simultaneously composition is the regeneration gas of hydrogen, hydrogen chloride and Micro Amounts of Chlorine silane gas.
Regeneration gas is passed into the second filter 80 filter, controlling intake air temperature is 80～150 ℃, and admission pressure is 0.05～0.2MPa, and charge flow rate is 500～2000Nm
3/ h, filtering accuracy is 800～1500 orders, obtains high-purity regenerated gas.The high-purity regenerated gas that obtains can carry out bubbling drip washing by eluting column 40, forms recycling.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one example of the present utility model or example in conjunction with specific features, structure, material or the characteristics of this example or example description.In this manual, the schematic statement of above-mentioned term not necessarily referred to identical example or example.And the specific features of description, structure, material or characteristics can be with suitable mode combinations in any one or more examples or example.
Although the above has illustrated and has described example of the present utility model, be understandable that, above-mentioned example is exemplary, can not be interpreted as restriction of the present utility model, those of ordinary skill in the art is not in the situation that break away from principle of the present utility model and aim can change above-mentioned example, modification, replacement and modification in scope of the present utility model.
Claims (8)
1. a gas-filtering device that is used for production of polysilicon technique, is characterized in that, comprises the upper cover, vertical tube part and the low head that connect successively from top to bottom, wherein,
The top of described filter is provided with for the gas outlet of discharging the gas after filtering and bottom and is provided with for the slag-drip opening of discharging waste residue,
The bottom of described vertical tube part is provided with for the air inlet that imports gas to be filtered in described straight tube, and the top of described air inlet is provided with filter house, and described filter house comprises the floral disc that is provided with through hole and is located at ceramic element in described through hole.
2. the gas-filtering device for production of polysilicon technique according to claim 1, is characterized in that, described through hole is a plurality of, and described a plurality of through holes are equipped with described ceramic element along the radial and axial even distribution of described floral disc in each described through hole.
3. the gas-filtering device for production of polysilicon technique according to claim 2, is characterized in that, the number of described through hole and described ceramic element is configured to flow control with described gas at 0.01～0.2m/s.
4. the gas-filtering device for production of polysilicon technique according to claim 2, it is characterized in that, described ceramic element is fixed on described floral disc by securing member, described securing member comprises retainer ring and gland, described retainer ring be welded on described floral disc and the endoporus of described retainer ring corresponding with described through hole, described gland snaps onto the top of described ceramic element and is connected that with described retainer ring described ceramic element is fixed in described through hole.
5. the gas-filtering device for production of polysilicon technique according to claim 1, is characterized in that, described ceramic element is the aluminium oxide filter core.
6. the gas-filtering device for production of polysilicon technique according to claim 5, is characterized in that, the filtering accuracy of described aluminium oxide filter core is 800～1500 orders.
7. the gas-filtering device for production of polysilicon technique according to claim 1, is characterized in that, described vertical tube part is provided with access hole, and described access hole is positioned at the top of described filter house.
8. the gas-filtering device for production of polysilicon technique according to claim 1, is characterized in that, described gas outlet is located at the top of described upper cover and the bottom that described slag-drip opening is located at described low head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203981301U CN202921106U (en) | 2012-08-10 | 2012-08-10 | Gas filter device for polycrystalline silicon production process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203981301U CN202921106U (en) | 2012-08-10 | 2012-08-10 | Gas filter device for polycrystalline silicon production process |
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| Publication Number | Publication Date |
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| CN202921106U true CN202921106U (en) | 2013-05-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012203981301U Expired - Lifetime CN202921106U (en) | 2012-08-10 | 2012-08-10 | Gas filter device for polycrystalline silicon production process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102814084A (en) * | 2012-08-10 | 2012-12-12 | 中国恩菲工程技术有限公司 | Gas filtering apparatus used in polysilicon production technology |
| US20230002237A1 (en) * | 2019-10-02 | 2023-01-05 | Tokuyama Corporation | Apparatus and method for producing polycrystalline silicon, and polycrystalline silicon |
-
2012
- 2012-08-10 CN CN2012203981301U patent/CN202921106U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102814084A (en) * | 2012-08-10 | 2012-12-12 | 中国恩菲工程技术有限公司 | Gas filtering apparatus used in polysilicon production technology |
| US20230002237A1 (en) * | 2019-10-02 | 2023-01-05 | Tokuyama Corporation | Apparatus and method for producing polycrystalline silicon, and polycrystalline silicon |
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Granted publication date: 20130508 |