CN202772560U - IGBT overcurrent protection circuit and inductive load control circuit - Google Patents
IGBT overcurrent protection circuit and inductive load control circuit Download PDFInfo
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- CN202772560U CN202772560U CN201220158789.XU CN201220158789U CN202772560U CN 202772560 U CN202772560 U CN 202772560U CN 201220158789 U CN201220158789 U CN 201220158789U CN 202772560 U CN202772560 U CN 202772560U
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- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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Abstract
The utility model discloses a IGBT overcurrent protection circuit and inductive load control circuit, wherein IGBT overcurrent protection circuit includes insulated gate bipolar transistor, IGBT drive circuit, load inductance, a power supply for providing operating voltage for load inductance, and be used for reducing the IGBT grid step-down control circuit of the falling speed of insulated gate bipolar transistor's grid voltage when IGBT overcurrent protection circuit appears overflowing or short-circuit fault, load inductance's one end is connected with power supply, load inductance's the other end and insulated gate bipolar transistor's drain electrode are connected, insulated gate bipolar transistor's source electrode ground connection, IGBT grid step-down control circuit is connected with insulated gate bipolar transistor's grid and insulated gate bipolar transistor's drain electrode. The utility model discloses avoided appearing overflowing or short circuit fault in order to lead to IGBT's damage because of the circuit, simultaneously, the utility model discloses can also prevent that the phenomenon of mistake overcurrent protection from taking place.
Description
Technical field
The utility model relates to the current protection technology field, relates in particular to a kind of IGBT current foldback circuit and inductive load control circuit.
Background technology
Because IGBT(Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) has that saturation pressure reduces, current carrying density is large, driving power is little and characteristics such as switching speed is fast, it is highly suitable for direct voltage is in the above converter system of 300V and 300V, such as fields such as alternating current machine, household electrical appliance, frequency converter, Switching Power Supply, lighting circuit, Traction Drives.
Yet there is following defective in IGBT current foldback circuit of the prior art:
(1) when overcurrent or short trouble appear in circuit, its current amplitude is very large, if in case detect over-current signal or the short trouble signal just turn-offs IGBT, then can make owing to the turn-off speed of IGBT is too fast the decrease speed (di/dt) of electric current in the circuit excessive, to cause circuit to produce very large induced electromotive force (Ldi/dt), thereby produce very high peak voltage, and this peak voltage will cause the damage of other components and parts in the permanent damage of IGBT and the power consumption equipment;
(2) because the antijamming capability of circuit itself is not strong, if in case detect over-current signal or the short trouble signal just turn-offs IGBT, will cause circuit the overcurrent protection phenomenon of mistake to occur.
The utility model content
Main purpose of the present utility model provides a kind of IGBT current foldback circuit, and the decrease speed that is intended to prevent wrong overcurrent protection and reduce IGBT grid voltage in the circuit when overcurrent or short trouble appear in circuit is to avoid the damage of IGBT.
In order to achieve the above object; the utility model proposes a kind of IGBT current foldback circuit; this IGBT current foldback circuit comprises insulated gate bipolar transistor; the IGBT drive circuit; load inductance; be used to load inductance that the power supply of operating voltage is provided; and the IGBT grid voltage reduction circuit of decrease speed that is used for when overcurrent or short trouble appear in described IGBT current foldback circuit, reducing the grid voltage of described insulated gate bipolar transistor; one end of described load inductance is connected with described power supply; the other end of described load inductance is connected with the drain electrode of described insulated gate bipolar transistor; the source ground of described insulated gate bipolar transistor, described IGBT grid voltage reduction circuit is connected with the grid of described insulated gate bipolar transistor and the drain electrode of described insulated gate bipolar transistor.
Preferably, described IGBT grid voltage reduction circuit comprises the first operating voltage input, the first resistance, the second resistance, the 3rd resistance, the first diode, the second diode, the first electric capacity, the second electric capacity, the first triode, the second triode, the first voltage stabilizing didoe and the second voltage stabilizing didoe; The negative electrode of described the first diode is connected with the drain electrode of described insulated gate bipolar transistor, the anode of the first diode is connected with the negative electrode of the first voltage stabilizing didoe, the anode of the first voltage stabilizing didoe is connected with the base stage of the first triode, and through the first capacity earth, the grounded emitter of the first triode, the second resistance and the second electric capacity are parallel with one another, the second resistance be connected a common port of electric capacity and be connected with the first operating voltage input, the second resistance be connected another common port of electric capacity and be connected through the collector electrode of the first resistance with the first triode, the second voltage stabilizing didoe and the second electric capacity are parallel with one another, the negative electrode of the second voltage stabilizing didoe is connected with the first operating voltage input, the anode of the second voltage stabilizing didoe is connected with the negative electrode of the second diode, the anode of the second diode is connected with the base stage of the second triode, the collector electrode of the second triode is through the 3rd grounding through resistance, and the emitter of the second triode is connected with the grid of described insulated gate bipolar transistor.
Preferably, described the first triode is the NPN triode, and described the second triode is the PNP triode.
Preferably, described IGBT drive circuit comprises the second operating voltage input, the 3rd triode, the 4th triode and the 4th resistance, the collector electrode of described the 3rd triode is connected with described the second operating voltage input, the base stage of described the 3rd triode is connected with the base stage of described the 4th triode, the emitter of described the 3rd triode is connected with the emitter of described the 4th triode, and be connected the grounded collector of described the 4th triode with the grid of described insulated gate bipolar transistor through described the 4th resistance.
Preferably, described the 3rd triode is the NPN triode, and described the 4th triode is the PNP triode.
Preferably, the voltage of described the first operating voltage input and described the second operating voltage input is 15V.
Preferably, the voltage of described power supply is 310V.
The utility model also proposes a kind of inductive load control circuit; this inductive load control circuit comprises the IGBT current foldback circuit; described IGBT current foldback circuit comprises insulated gate bipolar transistor; the IGBT drive circuit; load inductance; be used to load inductance that the power supply of operating voltage is provided; and the IGBT grid voltage reduction circuit of decrease speed that is used for when overcurrent or short trouble appear in described IGBT current foldback circuit, reducing the grid voltage of described insulated gate bipolar transistor; one end of described load inductance is connected with described power supply; the other end of described load inductance is connected with the drain electrode of described insulated gate bipolar transistor; the source ground of described insulated gate bipolar transistor, described IGBT grid voltage reduction circuit is connected with the grid of described insulated gate bipolar transistor and the drain electrode of described insulated gate bipolar transistor.
The IGBT current foldback circuit that the utility model proposes; by in existing IGBT current foldback circuit, setting up an IGBT grid voltage reduction circuit; when overcurrent or short trouble appear in the utility model IGBT current foldback circuit; this IGBT grid voltage reduction circuit can reduce the decrease speed of the grid voltage of IGBT in the circuit; thereby avoided producing too high peak voltage to cause the permanent damage of IGBT because the decrease speed of IGBT grid voltage is too fast in its drain electrode; simultaneously, the utility model can also prevent that the phenomenon of wrong overcurrent protection from occuring.
Description of drawings
Fig. 1 is the electrical block diagram of the utility model IGBT current foldback circuit preferred embodiment.
The realization of the utility model purpose, functional characteristics and advantage are described further with reference to accompanying drawing in connection with embodiment.
Embodiment
Further specify the technical solution of the utility model below in conjunction with Figure of description and specific embodiment.Should be appreciated that specific embodiment described herein only in order to explaining the utility model, and be not used in restriction the utility model.
Fig. 1 is the electrical block diagram of the utility model IGBT current foldback circuit preferred embodiment.
With reference to Fig. 1, the utility model IGBT current foldback circuit comprises IGBT drive circuit 1, IGBT(insulated gate bipolar transistor) 2, IGBT grid voltage reduction circuit 3, load inductance L and be used to load inductance L that the power supply of operating voltage is provided.The voltage of power supply is 310V among the utility model embodiment.
Concrete, the end of load inductance L is connected with the power supply of 310V, and the other end of load inductance L is connected with the drain electrode of IGBT 2, the source ground of IGBT 2, and also the drain electrode of IGBT2 all is connected with IGBT grid voltage reduction circuit 3 with grid.This IGBT grid voltage reduction circuit 3 is used for reducing the decrease speed of the grid voltage of circuit IGBT 2 when overcurrent or short trouble appear in the utility model IGBT current foldback circuit.
Wherein, IGBT grid voltage reduction circuit 3 comprises the first operating voltage input, the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the first diode D1, the second diode D2, the first capacitor C 1, the second capacitor C 2, the first triode Q1, the second triode Q2, the first voltage stabilizing didoe ZD1 and the second voltage stabilizing didoe ZD2.Wherein, the first triode Q1 is the NPN triode, and the second triode Q2 is the PNP triode.
IGBT drive circuit 1 comprises the second operating voltage input, the 3rd triode Q3, the 4th triode Q4 and the 4th resistance R 4.Wherein, the 3rd triode Q3 is the NPN triode, and the 4th triode Q4 is the PNP triode.
The voltage of the second operating voltage input of the first operating voltage input of IGBT grid voltage reduction circuit 3 and IGBT drive circuit 1 is 15V among the utility model embodiment.
Concrete, the negative electrode of the first diode D1 is connected with the drain electrode of IGBT 2 in the IGBT grid voltage reduction circuit 3, the anode of the first diode D1 is connected with the negative electrode of the first voltage stabilizing didoe ZD1, the anode of the first voltage stabilizing didoe ZD1 is connected with the base stage of the first triode Q1, and through the first capacitor C 1 ground connection, the grounded emitter of the first triode Q1, the second resistance R 2 and the second capacitor C 2 are parallel with one another, the second resistance R 2 is connected with the first operating voltage input of 15V with a common port of the second capacitor C 2, the second resistance R 2 is connected with the collector electrode of the first triode Q1 through the first resistance R 1 with the second capacitor C 2 another common ports, the second voltage stabilizing didoe ZD2 and the second capacitor C 2 are parallel with one another, the negative electrode of the second voltage stabilizing didoe ZD2 is connected with the first operating voltage input of 15V, the anode of the second voltage stabilizing didoe ZD2 is connected with the negative electrode of the second diode D2, the anode of the second diode D2 is connected with the base stage of the second triode Q2, the collector electrode of the second triode Q2 is through the 3rd resistance R 3 ground connection, and the emitter of the second triode Q2 is connected with the grid of IGBT 2.
The collector electrode of the 3rd triode Q3 in the IGBT drive circuit 1 is connected with the second operating voltage input of 15V, the base stage of the 3rd triode Q3 is connected with the base stage of the 4th triode Q4, the emitter of the 3rd triode Q3 is connected with the emitter of the 4th triode Q4, and be connected the grounded collector of the 4th triode Q4 through the 4th resistance R 4 with the grid of IGBT 2.
The utility model IGBT current foldback circuit also comprises the 5th resistance R 5; the anodic bonding of the first diode D1 in one end of the 5th resistance R 5 and the IGBT grid voltage reduction circuit 3, the other end of the 5th resistance R 5 is connected with the emitter of the 4th triode Q4 in the IGBT drive circuit 1.
The operation principle of the utility model IGBT current foldback circuit specifically describes as follows:
When (1) the IGBT current foldback circuit works
When the utility model IGBT current foldback circuit works (overcurrent or short trouble phenomenon do not appear); drain electrode and the voltage U ce between the source electrode of IGBT 2 are lower; the first diode D1 conducting; so that the voltage U b of the anode of the first diode D1 (being the b point) is clamped under the puncture voltage of the first voltage stabilizing didoe ZD1; thereby the first triode Q1 remains cut-off state; at this moment, IGBT 2 is by the 4th resistance R 4 normallies and cut-off in the IGBT drive circuit 1.
The first capacitor C 1 in the IGBT grid voltage reduction circuit 3 provides a very little delay protection and Anti-Jamming for the utility model IGBT current foldback circuit; if a very strong interference or flashy overcurrent have at a time appearred in the utility model IGBT current foldback circuit; then the first voltage stabilizing didoe ZD1 will conducting; thereby be 1 charging of the first capacitor C; if in the charging process of the first capacitor C 1; strong jamming in the circuit or moment overcurrent disappeared; then the first triode Q1 still is cut-off state, thereby so that the utility model IGBT current foldback circuit has prevented the generation of wrong overcurrent protection phenomenon.
When (2) overcurrent or short trouble appear in the IGBT current foldback circuit
When overcurrent or short trouble appear in the utility model IGBT current foldback circuit; the drain electrode of IGBT 2 and the voltage U ce between the source electrode raise; the voltage U b that b is ordered also increases; when the voltage U b of ordering as b is elevated to certain value; the first voltage stabilizing didoe ZD1 is with breakdown; thereby the first triode Q1 conducting, this moment second, capacitor C 2 was by 1 charging of the first resistance R.Yet, because the voltage at the second capacitor C 2 two ends can not suddenly change, therefore, the voltage U a of the anode of the second voltage stabilizing didoe (being a point) slowly reduces, when the voltage U a of ordering as a is reduced to certain value, the second triode Q2 is with conducting, thereby so that the grid voltage Uge of IGBT2 descends along with the decline of the voltage of the second capacitor C 2, thereby so that the electric current decrease speed of IGBT 2 is slow, eliminated the generation of IGBT 2 drain electrode peak voltages, thereby avoided producing the permanent damage that too high peak voltage causes IGBT 2 because of the drain electrode of IGBT 2.The utility model embodiment can be by regulating the capacitance of the second capacitor C 2, controlling the charging rate of the second capacitor C 2, thus the decrease speed of the grid voltage Uge of control IGBT 2.When the puncture voltage of voltage drop to the second voltage stabilizing didoe ZD2 of the second capacitor C 2, the second voltage stabilizing didoe ZD2 is with breakdown, so that the grid voltage Uge of IGBT 2 is clamped on the fixing magnitude of voltage, at this moment, the step-down process of the grid voltage Uge of IGBT 2 finishes, and IGBT 2 ends fully.
In the utility model embodiment; if in the step-down process of IGBT 2 grid voltage Uge; overcurrent in the circuit or short trouble blackout; then the b voltage U b of ordering can reduce again; thereby the first triode Q1 returns to again cut-off state; at this moment; the second capacitor C 2 is by 2 discharges of the second resistance R; so that the voltage U a that a is ordered is elevated again; thereby the second triode Q2 returns to again cut-off state; the grid voltage Uge of IGBT 2 rises, and the utility model IGBT current foldback circuit returns to again normal operating state.
The utility model is by setting up an IGBT grid voltage reduction circuit in existing IGBT current foldback circuit; when overcurrent or short trouble appear in the utility model IGBT current foldback circuit; this IGBT grid voltage reduction circuit can reduce the decrease speed of the grid voltage of IGBT in the circuit; thereby avoided producing too high peak voltage to cause the permanent damage of IGBT because the decrease speed of IGBT grid voltage is too fast in its drain electrode; simultaneously, the utility model can also prevent that the phenomenon of wrong overcurrent protection from occuring.
The utility model also proposes a kind of inductive load control circuit, and this inductive load control circuit comprises the IGBT current foldback circuit, and the circuit structure of its IGBT current foldback circuit is identical with the circuit structure of top described IGBT current foldback circuit, repeats no more herein.
The above only is preferred embodiment of the present utility model; be not so limit claim of the present utility model; every equivalent structure or equivalent flow process conversion that utilizes the utility model specification and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present utility model.
Claims (8)
1. IGBT current foldback circuit; comprise insulated gate bipolar transistor, IGBT drive circuit, load inductance and be used to load inductance that the power supply of operating voltage is provided; one end of described load inductance is connected with described power supply; the other end of described load inductance is connected with the drain electrode of described insulated gate bipolar transistor; the source ground of described insulated gate bipolar transistor; it is characterized in that, also comprise:
Be used for reducing when overcurrent or short trouble appear in described IGBT current foldback circuit the IGBT grid voltage reduction circuit of decrease speed of the grid voltage of described insulated gate bipolar transistor, described IGBT grid voltage reduction circuit is connected with the grid of described insulated gate bipolar transistor and the drain electrode of described insulated gate bipolar transistor.
2. IGBT current foldback circuit according to claim 1, it is characterized in that, described IGBT grid voltage reduction circuit comprises the first operating voltage input, the first resistance, the second resistance, the 3rd resistance, the first diode, the second diode, the first electric capacity, the second electric capacity, the first triode, the second triode, the first voltage stabilizing didoe and the second voltage stabilizing didoe; The negative electrode of described the first diode is connected with the drain electrode of described insulated gate bipolar transistor, the anode of the first diode is connected with the negative electrode of the first voltage stabilizing didoe, the anode of the first voltage stabilizing didoe is connected with the base stage of the first triode, and through the first capacity earth, the grounded emitter of the first triode, the second resistance and the second electric capacity are parallel with one another, the second resistance be connected a common port of electric capacity and be connected with the first operating voltage input, the second resistance be connected another common port of electric capacity and be connected through the collector electrode of the first resistance with the first triode, the second voltage stabilizing didoe and the second electric capacity are parallel with one another, the negative electrode of the second voltage stabilizing didoe is connected with the first operating voltage input, the anode of the second voltage stabilizing didoe is connected with the negative electrode of the second diode, the anode of the second diode is connected with the base stage of the second triode, the collector electrode of the second triode is through the 3rd grounding through resistance, and the emitter of the second triode is connected with the grid of described insulated gate bipolar transistor.
3. IGBT current foldback circuit according to claim 2 is characterized in that, described the first triode is the NPN triode, and described the second triode is the PNP triode.
4. IGBT current foldback circuit according to claim 2; it is characterized in that; described IGBT drive circuit comprises the second operating voltage input; the 3rd triode; the 4th triode and the 4th resistance; the collector electrode of described the 3rd triode is connected with described the second operating voltage input; the base stage of described the 3rd triode is connected with the base stage of described the 4th triode; the emitter of described the 3rd triode is connected with the emitter of described the 4th triode; and be connected the grounded collector of described the 4th triode with the grid of described insulated gate bipolar transistor through described the 4th resistance.
5. IGBT current foldback circuit according to claim 4 is characterized in that, described the 3rd triode is the NPN triode, and described the 4th triode is the PNP triode.
6. IGBT current foldback circuit according to claim 4 is characterized in that, the voltage of described the first operating voltage input and described the second operating voltage input is 15V.
7. IGBT current foldback circuit according to claim 1 is characterized in that, the voltage of described power supply is 310V.
8. an inductive load control circuit is characterized in that, comprises each described IGBT current foldback circuit among the claim 1-7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220158789.XU CN202772560U (en) | 2012-04-13 | 2012-04-13 | IGBT overcurrent protection circuit and inductive load control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220158789.XU CN202772560U (en) | 2012-04-13 | 2012-04-13 | IGBT overcurrent protection circuit and inductive load control circuit |
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| CN202772560U true CN202772560U (en) | 2013-03-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201220158789.XU Expired - Fee Related CN202772560U (en) | 2012-04-13 | 2012-04-13 | IGBT overcurrent protection circuit and inductive load control circuit |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105048414A (en) * | 2015-07-29 | 2015-11-11 | 中国科学院长春光学精密机械与物理研究所 | IGBT (Insulated Gate Bipolar Transistor) protection circuit and protection method in stepping motor driver |
| CN107069762A (en) * | 2017-03-27 | 2017-08-18 | 国家电网公司 | A kind of dynamic reactive compensation device using slow drop grid voltage overcurrent protection |
| CN107591777A (en) * | 2017-10-02 | 2018-01-16 | 佛山中锦微电科技有限公司 | Overcurrent protective power driving circuit and motor-drive circuit |
| CN107947571A (en) * | 2017-11-14 | 2018-04-20 | 上海斐讯数据通信技术有限公司 | A kind of DC DC Switching Power Supplies and its inductance are uttered long and high-pitched sounds removing method |
| CN110890739A (en) * | 2019-11-27 | 2020-03-17 | 浪潮商用机器有限公司 | A voltage protection circuit and power supply system |
| CN116232295A (en) * | 2023-03-23 | 2023-06-06 | 北京动力源科技股份有限公司 | Switch device overcurrent protection circuit and load driving circuit |
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2012
- 2012-04-13 CN CN201220158789.XU patent/CN202772560U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105048414A (en) * | 2015-07-29 | 2015-11-11 | 中国科学院长春光学精密机械与物理研究所 | IGBT (Insulated Gate Bipolar Transistor) protection circuit and protection method in stepping motor driver |
| CN105048414B (en) * | 2015-07-29 | 2018-07-27 | 中国科学院长春光学精密机械与物理研究所 | IGBT protection circuit and guard method in stepper motor driver |
| CN107069762A (en) * | 2017-03-27 | 2017-08-18 | 国家电网公司 | A kind of dynamic reactive compensation device using slow drop grid voltage overcurrent protection |
| CN107591777A (en) * | 2017-10-02 | 2018-01-16 | 佛山中锦微电科技有限公司 | Overcurrent protective power driving circuit and motor-drive circuit |
| CN107591777B (en) * | 2017-10-02 | 2020-09-15 | 佛山中锦微电科技有限公司 | Overcurrent protection type power drive circuit and motor drive circuit |
| CN107947571A (en) * | 2017-11-14 | 2018-04-20 | 上海斐讯数据通信技术有限公司 | A kind of DC DC Switching Power Supplies and its inductance are uttered long and high-pitched sounds removing method |
| CN110890739A (en) * | 2019-11-27 | 2020-03-17 | 浪潮商用机器有限公司 | A voltage protection circuit and power supply system |
| CN110890739B (en) * | 2019-11-27 | 2022-01-25 | 浪潮商用机器有限公司 | Voltage protection circuit and power supply system |
| CN116232295A (en) * | 2023-03-23 | 2023-06-06 | 北京动力源科技股份有限公司 | Switch device overcurrent protection circuit and load driving circuit |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130306 Termination date: 20150413 |
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| EXPY | Termination of patent right or utility model |