CN200976577Y - MOS tube driving circuit and television set having the same - Google Patents
MOS tube driving circuit and television set having the same Download PDFInfo
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- CN200976577Y CN200976577Y CN 200620161107 CN200620161107U CN200976577Y CN 200976577 Y CN200976577 Y CN 200976577Y CN 200620161107 CN200620161107 CN 200620161107 CN 200620161107 U CN200620161107 U CN 200620161107U CN 200976577 Y CN200976577 Y CN 200976577Y
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Abstract
The utility model discloses an MOS transistor driving circuit and a television which has the MOS transistor driving circuit. The utility model is composed of a switch MOS transistor and an output terminal of the drive signal used for controlling the switch of the MOS transistor; wherein, the output terminal of the drive signal is connected with the anode of the switching diode. The cathode of the switching diode is not only connected with the MOS gate, but also connected with the PNP transistor emitter. The PNP transistor gate is connected with the output terminal of the drive signal, the collector of which is connected with the ground. Based on the discharge circuit arranged between the MOS gate and the output terminal of the drive signal, the utility model can quickly conduct the PNP transistor and rapid discharge the electric charges stored in the MOS gate capacitance when the MOS transistor needs to be shutdown; therefore, the utility model achieves the rapid shutdown of the MOS transistor, reduces the switching loss effectively, avoids using the special driver chip and reduces the cost of the power circuits.
Description
Technical field
The utility model belongs to the drive circuit technical field, relates to a kind of metal-oxide-semiconductor switch driving circuit, specifically, relates to a kind of power driving circuit of realizing that metal-oxide-semiconductor turn-offs fast.
Background technology
In the power circuit of many electric equipments, for example use the metal-oxide-semiconductor drive circuit in the television power circuit sometimes, apply the drive signal of EDM Generator of Adjustable Duty Ratio by grid, and then control the turn-on and turn-off time of metal-oxide-semiconductor, to realize effective control the power circuit output voltage at metal-oxide-semiconductor.The conventional MOS tube drive circuit generally is the grid connection damping resistance at metal-oxide-semiconductor, connects the drive signal output of the EDM Generator of Adjustable Duty Ratio of control chip by damping resistance, and then realizes the switch control to metal-oxide-semiconductor.Adopt the metal-oxide-semiconductor drive circuit of this structure, when metal-oxide-semiconductor turn-offed, the common turn-off time was very long, causes very high switching loss.For head it off, in some metal-oxide-semiconductor drive circuit, adopted the method for designing that increases chip for driving to come the switch of metal-oxide-semiconductor is controlled, to reach the purpose of quick conducting, shutoff.But, being accompanied by the use of special driving chip, the also corresponding rising of the cost of drive circuit is unsuitable for promoting the use of in the lower household appliances of profit.
Summary of the invention
The utility model is realized the cost rising problem that quick turn-off function brought of metal-oxide-semiconductor in order to solve available technology adopting special driving chip, a kind of novel metal-oxide-semiconductor drive circuit is provided, by set up shutoff discharge circuit simple in structure at the grid of metal-oxide-semiconductor, realize the quick turn-off function of metal-oxide-semiconductor, reduced switching loss.
For solving the problems of the technologies described above, the utility model is achieved by the following technical solutions:
A kind of metal-oxide-semiconductor drive circuit and have the television set of described metal-oxide-semiconductor drive circuit comprises the drive signal output of switch MOS pipe and the described metal-oxide-semiconductor switch of control; Described drive signal output connects the anode of a switching diode, the negative electrode of described switching diode connects the grid of described metal-oxide-semiconductor on the one hand, the emitter that connects a positive-negative-positive triode on the other hand, the base stage of described positive-negative-positive triode connect described drive signal output, grounded collector.
In order to make the rapid conducting when metal-oxide-semiconductor need turn-off of described positive-negative-positive triode, the electric charge that the metal-oxide-semiconductor grid capacitance of in time releasing stores, reach the purpose that metal-oxide-semiconductor turn-offs fast, between the base stage of described positive-negative-positive triode and drive signal output, be connected with a branch road that composes in parallel by resistance and electric capacity.Described electric capacity is equivalent to ac short circuit when the drive signal saltus step of drive signal output output, thereby the positive-negative-positive triode ends rapidly can realize that drive signal is high level the time, and metal-oxide-semiconductor is opened rapidly; And when the drive signal saltus step becomes low level, the rapid conducting of positive-negative-positive triode, the control metal-oxide-semiconductor turn-offs fast.
For described metal-oxide-semiconductor is protected, on the grid of described metal-oxide-semiconductor, be connected with an overvoltage crowbar.Described overvoltage crowbar is formed in parallel by a voltage-stabiliser tube and resistance, and wherein, the negative electrode of voltage-stabiliser tube connects the grid of described metal-oxide-semiconductor, plus earth.
Described metal-oxide-semiconductor is the N-channel MOS pipe, and its drain electrode connects input power supply, and source ground is connected with a damping resistance between the grid of the negative electrode of described switching diode and metal-oxide-semiconductor.
Compared with prior art, advantage of the present utility model and good effect are: the utility model is by being provided with discharge circuit between the grid of metal-oxide-semiconductor and drive signal output, when the needs metal-oxide-semiconductor turn-offs, the rapid conducting of control positive-negative-positive triode, the electric charge that is stored in the metal-oxide-semiconductor grid capacitance is released rapidly, thereby realized the quick turn-off function of metal-oxide-semiconductor, effectively reduced switching loss.Metal-oxide-semiconductor driving circuit structure of the present utility model is simple, and it is little to take up room, and has avoided the use of special driving chip, has reduced the power circuit cost, is adapted at promoting the use of in the lower household appliances of profit.
Description of drawings
Below in conjunction with the drawings and specific embodiments the utility model is done explanation in further detail.
Fig. 1 is the metal-oxide-semiconductor drive circuit schematic diagram that the utility model proposes.
Embodiment
The utility model is in order to shorten the turn-off time of metal-oxide-semiconductor in the power circuit, to reduce its switching loss, in the metal-oxide-semiconductor drive circuit, set up control circuit as shown in Figure 1, in the time of need turn-offing in order to be implemented in metal-oxide-semiconductor, electric charge in its grid capacitance of releasing rapidly reaches the purpose that the control metal-oxide-semiconductor turn-offs fast.
Among Fig. 1, DRV1 is the drive signal output, and the control signal of output is the square-wave signal of EDM Generator of Adjustable Duty Ratio, in order to control the make-and-break time of described metal-oxide-semiconductor V907, to realize the effective adjusting to switch transformer output voltage in the power circuit.In television power circuit, described drive signal is generally provided by power supply control chip.Described metal-oxide-semiconductor V907 generally adopts the N-channel MOS pipe to realize, its drain electrode connects input power supply VIN, source ground G.Described input power supply VIN is a DC power supply, according to the topological structure difference, can be external electrical network voltage is handled back output by current rectifying and wave filtering circuit high-voltage DC power supply; Can also take from the switch transformer supply voltage.The source electrode of described metal-oxide-semiconductor can directly connect the earth according to the topological structure difference, can also connect virtual earth.Drive signal output DRV1 is connected the grid of described metal-oxide-semiconductor V907 with the forward antihunt circuit that resistance R 911 is formed by the switching diode VD901 by series connection.Wherein, the anode of switching diode VD901 connects described drive signal output DRV1, and negative electrode connects the grid of described metal-oxide-semiconductor V907 on the one hand by damping resistance R911, connects the emitter of a positive-negative-positive triode V906 on the other hand.The base stage of described positive-negative-positive triode V906 connects drive signal output DRV1, grounded collector G.
In order to make described positive-negative-positive triode V906 rapid conducting when metal-oxide-semiconductor V907 need turn-off, the electric charge that the metal-oxide-semiconductor V907 grid capacitance of in time releasing stores, reach the purpose that metal-oxide-semiconductor V907 turn-offs fast, between the base stage of described positive-negative-positive triode V906 and drive signal output DRV1, be connected with a parallel branch of forming by resistance R 912 and capacitor C 923.Described capacitor C 923 is equivalent to ac short circuit when the drive signal saltus step of drive signal output DRV1 output, thereby can realize that drive signal is high level the time, positive-negative-positive triode V906 ends rapidly, and metal-oxide-semiconductor V907 opens rapidly; And when the drive signal saltus step becomes low level, the rapid conducting of positive-negative-positive triode V906, control metal-oxide-semiconductor V907 turn-offs fast, reaches the purpose that reduces metal-oxide-semiconductor V907 switching loss.
In order to protect described switch MOS pipe V907, avoid its overvoltage to damage, on the grid of described metal-oxide-semiconductor V907, be connected with an overvoltage crowbar.Described overvoltage crowbar is composed in parallel by a voltage-stabiliser tube VZ901 and resistance R 913, and wherein, the negative electrode of voltage-stabiliser tube VZ901 connects the grid of described metal-oxide-semiconductor V907, plus earth G.
The operation principle of above-mentioned drive circuit is: power supply control chip is by the adjustable square-wave signal of drive signal output DRV1 output duty cycle, in the process of drive signal from the low transition to the high level, capacitor C 923 is equivalent to ac short circuit, high level signal affacts the base stage of positive-negative-positive triode V906 rapidly by capacitor C 923, because the base voltage of positive-negative-positive triode V906 is higher than its emitter voltage, so positive-negative-positive triode V906 is in cut-off state.The high level drive signal is controlled described metal-oxide-semiconductor V907 conducting by the grid that forward antihunt circuit VD901, R911 affact metal-oxide-semiconductor V907.Voltage-stabiliser tube VZ901 limits the grid voltage of described metal-oxide-semiconductor V907, to reach the purpose of overvoltage protection.When drive signal when high level jumps to low level state, capacitor C 923 is equivalent to ac short circuit, owing to have electric charge in the grid capacitance of metal-oxide-semiconductor V907, switching diode VD901 is oppositely ended, the emitter voltage of positive-negative-positive triode V906 is higher than its base voltage, the rapid conducting of positive-negative-positive triode V906, electric charge in the metal-oxide-semiconductor V907 grid capacitance is released fast over the ground by positive-negative-positive triode V906, thereby realized the quick turn-off function of metal-oxide-semiconductor V907, reduced the switching loss of metal-oxide-semiconductor V907.
The utility model is by adopting above-mentioned simple circuit configuration, under the prerequisite of not using special driving chip, realized the quick turn-off function of metal-oxide-semiconductor, effectively reduce switching loss, saved the power circuit cost, be adapted at promoting the use of in the lower household appliances of profit.
Certainly; above-mentioned explanation is not to be to restriction of the present utility model; the utility model also is not limited in above-mentioned giving an example, and variation, remodeling, interpolation or replacement that those skilled in the art are made in essential scope of the present utility model also should belong to protection range of the present utility model.
Claims (10)
1. metal-oxide-semiconductor drive circuit, the drive signal output that comprises switch MOS pipe and the described metal-oxide-semiconductor switch of control, it is characterized in that: described drive signal output connects the anode of a switching diode, the negative electrode of described switching diode connects the grid of described metal-oxide-semiconductor on the one hand, the emitter that connects a positive-negative-positive triode on the other hand, the base stage of described positive-negative-positive triode connects described drive signal output, grounded collector.
2. metal-oxide-semiconductor drive circuit according to claim 1 is characterized in that: be connected with a branch road that is composed in parallel by resistance and electric capacity between the base stage of described positive-negative-positive triode and drive signal output.
3. metal-oxide-semiconductor drive circuit according to claim 1 and 2 is characterized in that: be connected with an overvoltage crowbar on the grid of described metal-oxide-semiconductor.
4. metal-oxide-semiconductor drive circuit according to claim 3 is characterized in that: described overvoltage crowbar is formed in parallel by a voltage-stabiliser tube and resistance, and wherein, the negative electrode of voltage-stabiliser tube connects the grid of described metal-oxide-semiconductor, plus earth.
5. metal-oxide-semiconductor drive circuit according to claim 1 is characterized in that: be connected with a damping resistance between the grid of the negative electrode of described switching diode and metal-oxide-semiconductor; Described metal-oxide-semiconductor is the N-channel MOS pipe, and its drain electrode connects input power supply, source ground.
6. television set with described metal-oxide-semiconductor drive circuit, the drive signal output that comprises switch MOS pipe and the described metal-oxide-semiconductor switch of control, it is characterized in that: described drive signal output connects the anode of a switching diode, the negative electrode of described switching diode connects the grid of described metal-oxide-semiconductor on the one hand, the emitter that connects a positive-negative-positive triode on the other hand, the base stage of described positive-negative-positive triode connects described drive signal output, grounded collector.
7. television set according to claim 6 is characterized in that: be connected with a branch road that is composed in parallel by resistance and electric capacity between the base stage of described positive-negative-positive triode and drive signal output.
8. according to claim 6 or 7 described television sets, it is characterized in that: on the grid of described metal-oxide-semiconductor, be connected with an overvoltage crowbar.
9. television set according to claim 8 is characterized in that: described overvoltage crowbar is formed in parallel by a voltage-stabiliser tube and resistance, and wherein, the negative electrode of voltage-stabiliser tube connects the grid of described metal-oxide-semiconductor, plus earth.
10. television set according to claim 6 is characterized in that: be connected with a damping resistance between the grid of the negative electrode of described switching diode and metal-oxide-semiconductor; Described metal-oxide-semiconductor is the N-channel MOS pipe, and its drain electrode connects input power supply, source ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620161107 CN200976577Y (en) | 2006-11-29 | 2006-11-29 | MOS tube driving circuit and television set having the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620161107 CN200976577Y (en) | 2006-11-29 | 2006-11-29 | MOS tube driving circuit and television set having the same |
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| CN200976577Y true CN200976577Y (en) | 2007-11-14 |
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| CN 200620161107 Expired - Fee Related CN200976577Y (en) | 2006-11-29 | 2006-11-29 | MOS tube driving circuit and television set having the same |
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| CN101662205A (en) * | 2008-08-27 | 2010-03-03 | 德昌电机(深圳)有限公司 | Boost-buck accelerating circuit |
| CN101674001A (en) * | 2008-09-08 | 2010-03-17 | 德昌电机(深圳)有限公司 | Bridge driving circuit with blind area control |
| CN102237784A (en) * | 2010-04-23 | 2011-11-09 | 鸿富锦精密工业（深圳）有限公司 | Switch control circuit |
| CN102832870A (en) * | 2012-08-28 | 2012-12-19 | 北京曙光航空电气有限责任公司 | Chopper circuit for power generator exciting current |
| CN103683872A (en) * | 2012-09-11 | 2014-03-26 | 深圳市海洋王照明工程有限公司 | Half-bridge driving circuit |
| CN104374032A (en) * | 2014-09-30 | 2015-02-25 | 潘浩斌 | Novel ultrasonic humidifier |
| CN106656137A (en) * | 2016-12-15 | 2017-05-10 | 贵州振华群英电器有限公司（国营第八九厂） | Photovoltaic isolated 5ms power-up delay type direct current solid state relay |
| CN107181406A (en) * | 2016-03-09 | 2017-09-19 | 瑞萨电子株式会社 | Semiconductor devices, system and control method, charge pump circuit, vehicle |
| WO2018036041A1 (en) * | 2016-08-26 | 2018-03-01 | 重庆西南集成电路设计有限责任公司 | Rectifier diode replacement circuit and reverse bias cut-off drive circuit |
| CN108110734A (en) * | 2017-12-27 | 2018-06-01 | 苏州易美新思新能源科技有限公司 | A kind of fast drive circuit |
| CN109639161A (en) * | 2019-02-21 | 2019-04-16 | 合肥惠科金扬科技有限公司 | Voltage conversion circuit and display device |
| CN110061621A (en) * | 2019-04-16 | 2019-07-26 | 杰华特微电子（杭州）有限公司 | A kind of switching power source control circuit and method and Switching Power Supply |
| CN110649795A (en) * | 2019-09-25 | 2020-01-03 | 广州金升阳科技有限公司 | Driving circuit |
| CN111381145A (en) * | 2018-12-27 | 2020-07-07 | 沈阳高精数控智能技术股份有限公司 | Servo driver board functional test device |
| CN111536756A (en) * | 2020-05-21 | 2020-08-14 | 四川虹美智能科技有限公司 | Control apparatus for refrigerator |
| CN113422499A (en) * | 2021-06-04 | 2021-09-21 | 浙江亚太机电股份有限公司 | Circuit for isolating and driving MOS (Metal oxide semiconductor) transistor by double MCUs (micro control units) |
| CN113676024A (en) * | 2021-08-16 | 2021-11-19 | 深圳天狼芯半导体有限公司 | Gate circuit, switching power supply circuit and charger applied to NMOS tube |
| CN114157277A (en) * | 2021-12-06 | 2022-03-08 | 广东芬尼克兹节能设备有限公司 | IGBT drive circuit and electrical equipment |
| WO2022048293A1 (en) * | 2020-09-04 | 2022-03-10 | 欣旺达电动汽车电池有限公司 | Soft turn-off active clamp protection circuit and power system |
| CN116455377A (en) * | 2023-04-12 | 2023-07-18 | 宁波阔野科技有限公司 | Switch array driving circuit |
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2006
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Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101662205A (en) * | 2008-08-27 | 2010-03-03 | 德昌电机(深圳)有限公司 | Boost-buck accelerating circuit |
| CN101662205B (en) * | 2008-08-27 | 2013-07-10 | 德昌电机(深圳)有限公司 | Boost-buck accelerating circuit |
| CN101674001A (en) * | 2008-09-08 | 2010-03-17 | 德昌电机(深圳)有限公司 | Bridge driving circuit with blind area control |
| CN101674001B (en) * | 2008-09-08 | 2014-01-01 | 德昌电机(深圳)有限公司 | Bridge driving circuit with blind area control |
| CN102237784A (en) * | 2010-04-23 | 2011-11-09 | 鸿富锦精密工业（深圳）有限公司 | Switch control circuit |
| CN102832870A (en) * | 2012-08-28 | 2012-12-19 | 北京曙光航空电气有限责任公司 | Chopper circuit for power generator exciting current |
| CN103683872A (en) * | 2012-09-11 | 2014-03-26 | 深圳市海洋王照明工程有限公司 | Half-bridge driving circuit |
| CN104374032A (en) * | 2014-09-30 | 2015-02-25 | 潘浩斌 | Novel ultrasonic humidifier |
| CN107181406A (en) * | 2016-03-09 | 2017-09-19 | 瑞萨电子株式会社 | Semiconductor devices, system and control method, charge pump circuit, vehicle |
| WO2018036041A1 (en) * | 2016-08-26 | 2018-03-01 | 重庆西南集成电路设计有限责任公司 | Rectifier diode replacement circuit and reverse bias cut-off drive circuit |
| CN106656137A (en) * | 2016-12-15 | 2017-05-10 | 贵州振华群英电器有限公司（国营第八九厂） | Photovoltaic isolated 5ms power-up delay type direct current solid state relay |
| CN108110734A (en) * | 2017-12-27 | 2018-06-01 | 苏州易美新思新能源科技有限公司 | A kind of fast drive circuit |
| CN111381145A (en) * | 2018-12-27 | 2020-07-07 | 沈阳高精数控智能技术股份有限公司 | Servo driver board functional test device |
| CN109639161A (en) * | 2019-02-21 | 2019-04-16 | 合肥惠科金扬科技有限公司 | Voltage conversion circuit and display device |
| CN109639161B (en) * | 2019-02-21 | 2025-01-07 | 合肥惠科金扬科技有限公司 | Voltage conversion circuit and display device |
| CN110061621A (en) * | 2019-04-16 | 2019-07-26 | 杰华特微电子（杭州）有限公司 | A kind of switching power source control circuit and method and Switching Power Supply |
| CN110649795A (en) * | 2019-09-25 | 2020-01-03 | 广州金升阳科技有限公司 | Driving circuit |
| CN111536756A (en) * | 2020-05-21 | 2020-08-14 | 四川虹美智能科技有限公司 | Control apparatus for refrigerator |
| WO2022048293A1 (en) * | 2020-09-04 | 2022-03-10 | 欣旺达电动汽车电池有限公司 | Soft turn-off active clamp protection circuit and power system |
| US12155201B2 (en) | 2020-09-04 | 2024-11-26 | Sunwoda Mobility Energy Technology Co., Ltd. | Soft turn-off active clamp protection circuit and power system |
| CN113422499A (en) * | 2021-06-04 | 2021-09-21 | 浙江亚太机电股份有限公司 | Circuit for isolating and driving MOS (Metal oxide semiconductor) transistor by double MCUs (micro control units) |
| CN113676024A (en) * | 2021-08-16 | 2021-11-19 | 深圳天狼芯半导体有限公司 | Gate circuit, switching power supply circuit and charger applied to NMOS tube |
| CN114157277A (en) * | 2021-12-06 | 2022-03-08 | 广东芬尼克兹节能设备有限公司 | IGBT drive circuit and electrical equipment |
| CN116455377A (en) * | 2023-04-12 | 2023-07-18 | 宁波阔野科技有限公司 | Switch array driving circuit |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071114 Termination date: 20101129 |