CN202153536U - High power LED packaging structure - Google Patents
High power LED packaging structure Download PDFInfo
- Publication number
- CN202153536U CN202153536U CN2011202571517U CN201120257151U CN202153536U CN 202153536 U CN202153536 U CN 202153536U CN 2011202571517 U CN2011202571517 U CN 2011202571517U CN 201120257151 U CN201120257151 U CN 201120257151U CN 202153536 U CN202153536 U CN 202153536U
- Authority
- CN
- China
- Prior art keywords
- substrate
- positive
- led
- led wafer
- power led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000003292 glue Substances 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 8
- 238000005538 encapsulation Methods 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 241000218202 Coptis Species 0.000 claims description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000741 silica gel Substances 0.000 abstract description 3
- 229910002027 silica gel Inorganic materials 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model relates to an LED, in particular to an LED packaging structure, comprising a substrate, wherein an LED wafer is cured at the middle of the substrate, the left and right ends of the substrate are respectively provided with positive and negative pole supports, the positive and negative poles of the LED wafer are welded on the positive and negative pole supports respectively through gold lines, the supports are respectively provided with a circle of box dam glue, the LED wafer inside the box dam glue is covered with a fluorescent powder coating, the outermost layer of the box dam glue is packaged by a transparent silica gel layer, and the fluorescent power coating is formed through alternative arrangement of a plurality of fluorescent power layers and transparent silica gel layers. The high power LED packaging structure can not only ensure the fluorescent light absorption emission conversion efficiency, but also avoid color temperature difference and light loss.
Description
Technical field
The utility model relates to LED, relates in particular to the encapsulating structure of LED.
Background technology
LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state semiconductor device that can electric energy be converted into visible light, and it can directly be converted into luminous energy to electric energy.LED is being widely used as a kind of new lighting source material.And the LED encapsulation technology has played a very crucial effect to the light extraction efficiency of light-emitting diode.Existing illumination on the market is broadly divided into following several kinds with the technology that high-power LED encapsulation improves light extraction efficiency: one, directly utilize the luminous efficiency of wafer itself higher, but the luminous efficiency of wafer own is limited and cost is high again; Two, adopt coating bulky grain fluorescent material substrate, once put glue and be shaped, oversized particles fluorescent material precipitates easily and causes hot spot to differ, and causes color temperature difference more serious.
Summary of the invention
Therefore; The utility model proposes a kind of improved high-power LED encapsulation structure, in the characteristic that does not change luminescent wafer to the deficiency of existing high-power LED encapsulation structure; Through the improvement of fluorescent material applying structure layer, and realize the great power LED that a kind of color temperature difference is little, optical loss is very little.
The technical scheme of the utility model is:
A kind of high-power LED encapsulation structure comprises: a substrate, substrate intermediate solidification one LED wafer; The left and right two ends of substrate respectively are provided with the positive and negative electrode support, and the positive and negative electrode of LED wafer is soldered on the positive and negative electrode support through gold thread respectively, and ring is established a corral dam glue on the support; Cover fluorescent coating on the LED wafer in the box dam glue; Outermost layer on the box dam glue encapsulates a transparent silicon glue-line, and wherein, fluorescent coating is plural layer phosphor powder layer and the alternately laminated formation of substratum transparent.
Further, to select for use be ceramic substrate or aluminium base to described substrate.
Further, described LED wafer specifically is to solidify in the middle of the bowl cup of substrate.
What further, the substratum transparent in the described fluorescent coating was selected for use is the transparent silicon glue-line of high index of refraction.
The utility model adopts as above technical scheme, through the improvement of fluorescent material applying structure layer, promptly alternately covers phosphor powder layer and substratum transparent; The granule fluorescent material of ultra-thin phosphor powder layer is difficult for deposition, can not cause hot spot to differ, and is inverted the serious phenomenon of color temperature difference; Simultaneously; Phosphor powder layer is very thin, and the light that fluorescent material receives to send behind LED blue-light excited can diffuse reflection not take place between fluorescent material, has reduced the loss of light.Substratum transparent is the silica gel of high index of refraction, has promptly improved light extraction efficiency and has effectively reduced light decay again.Therefore, multilayer phosphor powder layer and substratum transparent alternatively layered structure can be avoided color temperature difference and optical loss again when guaranteeing fluorescent absorption luminescent conversion efficient.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Embodiment
Combine accompanying drawing and embodiment that the utility model is further specified at present.
Consult shown in Figure 1ly, the high-power LED encapsulation structure of present embodiment comprises: a substrate 11; Substrate 11 intermediate solidification one LED wafer 16, the left and right two ends of substrate 11 respectively are provided with the positive and negative electrode support, and support comprises the insulating barrier 12 and conductive layer 13 of bottom; The positive and negative electrode of LED wafer 16 is soldered on the positive and negative electrode support through gold thread 15 respectively; Ring is established a corral dam glue 14 on the support, covers fluorescent coating 18 on the LED wafer 16 in the box dam glue 14, and the outermost layer on the box dam glue 14 encapsulates a transparent silicon glue-line 17 with protection LED lamp pearl; Wherein, fluorescent coating 18 is plural layer phosphor powder layer 181 and substratum transparent 182 alternately laminated formations.
Preferably, to select for use be ceramic substrate or aluminium base to described substrate 11.
Preferably, described LED wafer 16 specifically is to solidify in the middle of the bowl cup of substrate 11.
What preferably, the substratum transparent 182 in the described fluorescent coating 18 was selected for use is the transparent silicon glue-line of high index of refraction.
Although specifically show and introduced the utility model in conjunction with preferred embodiment; But the those skilled in the art should be understood that; In the spirit and scope of the utility model that does not break away from appended claims and limited; Can make various variations to the utility model in form with on the details, be the protection range of the utility model.
Claims (4)
1. a high-power LED encapsulation structure is characterized in that, comprising: a substrate; Substrate intermediate solidification one LED wafer, the left and right two ends of substrate respectively are provided with the positive and negative electrode support, and the positive and negative electrode of LED wafer is soldered on the positive and negative electrode support through gold thread respectively; Ring is established a corral dam glue on the support, covers fluorescent coating on the LED wafer in the box dam glue, and the outermost layer on the box dam glue encapsulates a transparent silicon glue-line; Wherein, fluorescent coating is plural layer phosphor powder layer and the alternately laminated formation of substratum transparent.
2. high-power LED encapsulation structure according to claim 1 is characterized in that: described substrate is ceramic substrate or aluminium base.
3. high-power LED encapsulation structure according to claim 1 is characterized in that: described LED wafer is to solidify in the middle of the bowl cup of substrate.
4. high-power LED encapsulation structure according to claim 1 is characterized in that: the substratum transparent in the described fluorescent coating is the transparent silicon glue-line of high index of refraction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202571517U CN202153536U (en) | 2011-07-20 | 2011-07-20 | High power LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202571517U CN202153536U (en) | 2011-07-20 | 2011-07-20 | High power LED packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202153536U true CN202153536U (en) | 2012-02-29 |
Family
ID=45694030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202571517U Expired - Fee Related CN202153536U (en) | 2011-07-20 | 2011-07-20 | High power LED packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202153536U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931178A (en) * | 2012-07-30 | 2013-02-13 | 易美芯光（北京）科技有限公司 | Novel light emitting diode (LED) integrated optical source packaging structure |
| CN103022327A (en) * | 2013-01-04 | 2013-04-03 | 北京半导体照明科技促进中心 | LED packaging structure and method for manufacturing same |
| CN103545404A (en) * | 2012-07-09 | 2014-01-29 | 奇菱光电股份有限公司 | Quantum dot stack structure, manufacturing method thereof, and light-emitting element |
| CN106206913A (en) * | 2016-09-19 | 2016-12-07 | 绍兴文理学院 | A kind of LED fluorescent powder coating |
| CN107035978A (en) * | 2015-08-17 | 2017-08-11 | 嘉兴山蒲照明电器有限公司 | The manufacture method of LED filament |
| CN107275460A (en) * | 2017-07-12 | 2017-10-20 | 惠州市聚飞光电有限公司 | A kind of luminous LED component of one side and method for packing |
| CN107706287A (en) * | 2017-09-29 | 2018-02-16 | 江西新月光电有限公司 | COB light source preparation method |
| CN108011024A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | LED light and LED packaging technologies |
| CN110654098A (en) * | 2019-09-12 | 2020-01-07 | 河南泛锐复合材料研究院有限公司 | Method for preparing sandwich layer for composite sandwich plate by using electrostatic spraying method |
-
2011
- 2011-07-20 CN CN2011202571517U patent/CN202153536U/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545404A (en) * | 2012-07-09 | 2014-01-29 | 奇菱光电股份有限公司 | Quantum dot stack structure, manufacturing method thereof, and light-emitting element |
| CN103545404B (en) * | 2012-07-09 | 2016-12-21 | 奇菱光电股份有限公司 | Quantum dot stack structure, manufacturing method thereof, and light-emitting element |
| CN102931178A (en) * | 2012-07-30 | 2013-02-13 | 易美芯光（北京）科技有限公司 | Novel light emitting diode (LED) integrated optical source packaging structure |
| CN103022327A (en) * | 2013-01-04 | 2013-04-03 | 北京半导体照明科技促进中心 | LED packaging structure and method for manufacturing same |
| CN107035978A (en) * | 2015-08-17 | 2017-08-11 | 嘉兴山蒲照明电器有限公司 | The manufacture method of LED filament |
| CN106206913B (en) * | 2016-09-19 | 2019-10-29 | 绍兴文理学院 | A kind of preparation method of LED fluorescent powder coating |
| CN106206913A (en) * | 2016-09-19 | 2016-12-07 | 绍兴文理学院 | A kind of LED fluorescent powder coating |
| CN107275460A (en) * | 2017-07-12 | 2017-10-20 | 惠州市聚飞光电有限公司 | A kind of luminous LED component of one side and method for packing |
| WO2019010865A1 (en) * | 2017-07-12 | 2019-01-17 | 惠州市聚飞光电有限公司 | Single-sided illuminating led component and packaging method |
| CN107706287A (en) * | 2017-09-29 | 2018-02-16 | 江西新月光电有限公司 | COB light source preparation method |
| CN108011024A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | LED light and LED packaging technologies |
| CN110654098A (en) * | 2019-09-12 | 2020-01-07 | 河南泛锐复合材料研究院有限公司 | Method for preparing sandwich layer for composite sandwich plate by using electrostatic spraying method |
| CN110654098B (en) * | 2019-09-12 | 2022-05-24 | 重庆泛锐科技有限公司 | Method for preparing sandwich layer for composite sandwich plate by using electrostatic spraying method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120229 Termination date: 20140720 |
|
| EXPY | Termination of patent right or utility model |