CN202120917U

CN202120917U - Large power IGBT flat crimping type packaging structure

Info

Publication number: CN202120917U
Application number: CN 201120148224
Authority: CN
Inventors: 陈国贤; 徐宏伟; 陈蓓璐
Original assignee: JIANGYIN SAIYING ELECTRON CO Ltd
Current assignee: JIANGYIN SAIYING ELECTRON CO Ltd
Priority date: 2011-05-11
Filing date: 2011-05-11
Publication date: 2012-01-18
Anticipated expiration: 2021-05-11

Abstract

The present utility model relates to a large power IGBT flat crimping type packaging structure. The structure is characterized in that a tube core comprises a plastic die set plate (2-1), an IGBT chip unit (2-2), a door pole leading-out plate (2-3), and a lower molybdenum sheet (2-4). The IGBT chip unit comprises a door pole needle (2-2-1), an electrode group block (2-2-2), an upper molybdenum sheet (2-2-3), and an IGBT chip (2-2-4). The electrode group block, the upper molybdenum sheet and the IGBT chip are crimped successively from the top to the bottom inside a through hole of the plastic die set plate, the upper surface of the electrode group block is contacted with a cathode electrode, and the lower surface of the IGBT chip is crimped with the lower molybdenum sheet. By adopting the structure, the heat dissipation effect is increased when the IGBT is in work, and the door pole leading-out structure is simplified.

Description

The dull and stereotyped compression joint type encapsulating structure of high-power IGBT

Technical field

The utility model relates to the dull and stereotyped compression joint type encapsulating structure of a kind of high-power IGBT, belongs to electric and electronic technical field.

Background technology

The latter half sixties 20th century, developed country realizes energy-conservation cause for the first time with frequency control between the world energy sources climacteric at the beginning of the seventies great development has been achieved in power electronic device and the progress in frequency converter is used thereof.As green energy conservation technology, under the overall situation of present global energy shortage, power electronic technology energy-conservation, electromechanical integration, minimizing environmental pollution, save raw material, reduce production costs and raise the efficiency and quality aspect all play crucial effect.Power electronic device the earliest is a thyristor.Eighties of last century fifties, the silicon wafer brake tube of GE's invention comes out, and indicates the beginning of power electronic technology, and the derivation of thyristor after this is more and more, and power is increasing, and performance is perfect day by day.But because the own operating frequency of thyristor lower (generally being lower than 400Hz), big limitations its application, in addition, turn-off these devices, need forced commutation circuit, make overall weight and volume increase, efficient and reliability reduction.The modern power electronic device develops to high-power, easy driving and high frequency direction.IGBT is the revolutionary product of tool in the third generation power electronic device, and its performance successfully is applied to the high-power field of high frequency (more than the 20kHZ) through improving constantly and improving in a few years.IGBT integrates the advantage of power transistor GTR and power field effect pipe MOSFET, have driven, power consumption is little, switching speed is high, saturation pressure reduces, can be high pressure resistant and characteristics such as big electric current.

IGBT is as a kind of main flow device in the world; Developed business-like the 5th generation, its packaged type is variation also, and what generally adopt at present is the modular structure of high performance plastics shell; In the structure of this encapsulation; The chip of IGBT adopts the method for welding and the BDC plate of heat conduction non-conducting to weld together, and other exit all adopts bonding method to link to each other with external tapping, and an IGBT module can comprise a lot of igbt chips; For example be exactly 60 igbt chips in more typical 3300V/1200A IGBT module and surpass 450 lines, these parallelly connected igbt chips are fixed on the same ceramic substrate to guarantee good insulation performance and heat conduction.

Therefore but there is following shortcoming in this structure: one, because to have only one side be conductive electrode, can only radiator simultaneously be installed at that conductive electrode arranged, radiating effect is not ideal enough; Two, the line of this encapsulating structure adopts bonding technology, and this has increased the possibility that under big current condition, causes device failure; Three, the gate pole deriving structure is complicated, and the line in the encapsulating structure is too much.

Summary of the invention

The purpose of the utility model is to overcome above-mentioned deficiency, provides a kind of high-power IGBT dull and stereotyped compression joint type encapsulating structure, can adopt two-sided heat radiation, is reduced under the big current condition possibility that device is caused damage simultaneously, simplifies the gate pole deriving structure.

The purpose of the utility model is achieved in that the dull and stereotyped compression joint type encapsulating structure of a kind of high-power IGBT; Include ceramic base, tube core and loam cake; The loam cake lid places on the ceramic base, and loam cake includes cathode electrode, cathode flange, and cathode flange is welded on the outer rim of cathode electrode with one heart; Ceramic base includes anode flange, porcelain ring, anode seal circle, anode electrode and gate lead pipe; The anode seal circle is welded on the lower surface of porcelain ring with one heart; Anode flange is welded on the upper surface of porcelain ring with one heart; The superimposed from top to bottom concentric welding of anode flange, porcelain ring and anode seal circle, the gate lead pipe is connected on the shell wall of porcelain ring.

Tube core comprises plastics mould bases dish, igbt chip unit, gate pole end tab and following molybdenum sheet; Be provided with through hole on plastics mould bases dish and the gate pole end tab; The igbt chip unit inserts in the through hole of plastics mould bases dish, and gate pole end tab lid places on the igbt chip unit, and the gate pole end tab welds with the gate lead pipe mutually; Following molybdenum sheet is arranged at the bottom of plastics mould bases dish, its lower surface and anode electrode crimping mutually.

The igbt chip unit comprises gate pole pin, electrode chunk, goes up molybdenum sheet and igbt chip; Said gate pole pin is a flexible member, and gate pole cushion places plastics mould bases dish, and its lower end contacts with igbt chip; The upper end contacts with the gate pole end tab; In the through hole of plastics mould bases dish the electrode chunk, on molybdenum sheet and igbt chip crimping successively from top to bottom, the upper surface of electrode chunk contacts with cathode electrode, the lower surface of igbt chip contacts with following molybdenum sheet.

Compared with prior art, the beneficial effect of the utility model is:

The igbt chip of the utility model is through upper and lower molybdenum sheet, the tight crimping of electrode chunk harmonizing yinyang utmost point electrode of electric-conductivity heat-conductivity high; Realize two-sided refrigerating function through connecting radiator at anode and cathode electrode outer surface; The encapsulation of this compression joint type simultaneously can prevent under big current conditions, to cause the possibility of device failure; Owing to adopt aluminium oxide ceramics as dielectric, have higher insulation resistance and withstand voltage than high performance plastics shell, the gate pole deriving structure is simple and practical.

Description of drawings

Fig. 1 is the structural representation of the utility model.

Fig. 2 is the BB profile of Fig. 1.

Fig. 3 is the AA profile of Fig. 2.

Wherein: shell 1, tube core 2, cathode electrode 1-1, cathode flange 1-2, anode flange 1-3, porcelain ring 1-4, anode seal circle 1-5, anode electrode 1-6, gate lead pipe 1-7, plastics mould bases dish 2-1, igbt chip unit 2-2, gate pole end tab 2-3, time molybdenum sheet 2-4, gate pole pin 2-2-1, electrode chunk 2-2-2, last molybdenum sheet 2-2-3, igbt chip 2-2-4.

Embodiment

Referring to Fig. 1; The dull and stereotyped compression joint type encapsulating structure of a kind of high-power IGBT that the utility model relates to; Include shell 1 and tube core 2, shell 1 is made up of base and loam cake, and said loam cake lid places on the ceramic base; Said loam cake includes cathode electrode 1-1 and cathode flange 1-2, and said cathode flange 1-2 is welded on the outer rim of cathode electrode 1-1 with one heart; Said base includes anode flange 1-3, porcelain ring 1-4, anode electrode 1-5, anode seal circle 1-6 and gate lead pipe 1-7; The inner edge of said anode seal circle 1-5 is welded on the outer rim of anode electrode 1-5 with one heart; The outer rim of said anode seal circle 1-6 is welded on the lower surface of porcelain ring 1-4 with one heart; Said anode flange 1-3 is welded on the upper surface of porcelain ring 1-4 with one heart; Said anode flange 1-3, porcelain ring 1-4 and the superimposed from top to bottom concentric welding of anode seal circle 1-6, said gate lead pipe 1-7 is connected on the shell wall of porcelain ring.

Referring to Fig. 2-Fig. 3; The tube core of the utility model comprises plastics mould bases dish 2-1, igbt chip unit 2-2, gate pole end tab 2-3 and following molybdenum sheet 2-4; Be provided with through hole on said plastics mould bases dish 2-1 and the gate pole end tab 2-2; Said igbt chip unit 2-2 inserts in the through hole of plastics mould bases dish 2-1, and said gate pole end tab 2-3 lid places on the igbt chip unit 2-2, and said gate pole end tab 2-3 welds with gate lead pipe 1-7 mutually; Said molybdenum sheet 2-4 down is arranged at the bottom of plastics mould bases dish 2-1, and its lower surface contacts with anode electrode 1-5; Said igbt chip unit 2-2 comprises gate pole pin 2-2-1, electrode chunk 2-2-2, goes up molybdenum sheet 2-2-3 and igbt chip 2-2-4; Said gate pole pin 2-2-1 is a flexible member; Said gate pole pin 2-2-1 is inserted among the plastics mould bases dish 2-1; Its lower end and igbt chip 2-2-4 Elastic Contact, upper end and gate pole end tab 2-3 Elastic Contact, in the through hole of said plastics mould bases dish 2-1 electrode chunk 2-2-2, on molybdenum sheet 2-2-3 and igbt chip 2-2-4 crimping successively from top to bottom; The upper surface of said electrode chunk 2-2-2 and cathode electrode 1-1 crimping mutually, the lower surface of said igbt chip 2-2-4 contacts with following molybdenum sheet 2-4.

Claims

1. the dull and stereotyped compression joint type encapsulating structure of a high-power IGBT; Include shell (1) and tube core (2); Said shell (1) includes cathode electrode (1-1), cathode flange (1-2), anode flange (1-3), porcelain ring (1-4), anode electrode (1-5), anode seal circle (1-6) and gate lead pipe (1-7); It is characterized in that: said tube core (2) comprises plastics mould bases dish (2-1), igbt chip unit (2-2), gate pole end tab (2-3) and following molybdenum sheet (2-4); Be provided with through hole on said plastics mould bases dish (2-1) and the gate pole end tab (2-2); Said igbt chip unit (2-2) inserts in the through hole of plastics mould bases dishes (2-1), and said gate pole end tab (2-3) lid places on the igbt chip unit (2-2), and said gate pole end tab (2-3) fixes with gate lead pipe (1-7); Said molybdenum sheet (2-4) down is arranged at the bottom of plastics mould bases dish (2-1), and its lower surface contacts with anode electrode (1-5); Said igbt chip unit (2-2) comprises gate pole pin (2-2-1), electrode chunk (2-2-2), goes up molybdenum sheet (2-2-3) and igbt chip (2-2-4); Said gate pole pin (2-2-1) is inserted in the plastics mould bases dish (2-1); Its lower end contacts with igbt chip (2-2-4); The upper end contacts with gate pole end tab (2-3); Electrode chunk (2-2-2), upward molybdenum sheet (2-2-3) and igbt chip (2-2-4) crimping successively from top to bottom in the through hole of said plastics mould bases dish (2-1); The upper surface of said electrode chunk (2-2-2) contacts with cathode electrode (1-1), and the lower surface of said igbt chip (2-2-4) contacts with following molybdenum sheet (2-4).

2. the dull and stereotyped compression joint type encapsulating structure of high-power IGBT according to claim 1, it is characterized in that: said gate pole pin (2-2-1) is a flexible member.