CN201886035U - Thermal type wind-speed and wind-direction sensor with thermal-insulating structure - Google Patents
Thermal type wind-speed and wind-direction sensor with thermal-insulating structure Download PDFInfo
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- CN201886035U CN201886035U CN2010206584028U CN201020658402U CN201886035U CN 201886035 U CN201886035 U CN 201886035U CN 2010206584028 U CN2010206584028 U CN 2010206584028U CN 201020658402 U CN201020658402 U CN 201020658402U CN 201886035 U CN201886035 U CN 201886035U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 75
- 239000010703 silicon Substances 0.000 claims abstract description 75
- 239000000919 ceramic Substances 0.000 claims abstract description 49
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 40
- 239000010931 gold Substances 0.000 claims description 25
- 229910052737 gold Inorganic materials 0.000 claims description 25
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims 2
- 238000002360 preparation method Methods 0.000 abstract description 15
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract 4
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000012805 post-processing Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000009529 body temperature measurement Methods 0.000 description 18
- 238000009413 insulation Methods 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 14
- 238000005538 encapsulation Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 239000003292 glue Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 4
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 208000035126 Facies Diseases 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000018102 sensory perception of wind Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
The utility model discloses a thermal type wind-speed and wind-direction sensor with a thermal-insulating structure, which comprises a silicon chip and a ceramic baseplate, wherein the silicon chip is positioned above the ceramic baseplate, four heating elements and four thermal-sensing temperature-measuring elements are symmetrically distributed on the four edges on the upper surface of the silicon chip, thermal-insulating slots are arranged among the heating elements and the thermal-sensing temperature-measuring elements, thermal-sensing cavities are arranged below the thermal-sensing temperature-measuring elements on the back surface of the silicon chip, a ceramic gold-plating layer and a silicon gold-plating layer are arranged between the silicon chip and the ceramic baseplate, and the ceramic gold-plating layer and the silicon gold-plating layer are connected through a gold-gold bonding process and used for the thermal connection between the silicon chip and the ceramic baseplate. In the whole preparation process of the sensor, a standard CMOS (Complementary Metal Oxide Semiconductor) process is used, a post-processing process is simple, the sensitivity of the chip can be effectively enhanced through the prepared thermal-insulating slots and the prepared thermal-sensing cavities, the thermal-conduction loss of the chip and the thermal capacity of the sensor are reduced, and the response time of the sensor is decreased.
Description
Technical field
The utility model relates to a kind of hot type wind speed wind direction sensor with heat insulation structure, and with the wind speed wind direction sensor of standard CMOS process compatibility, relate in particular to a kind of integrated anemograph of low-power consumption.
Background technology
In the design of CMOS integrated anemograph, two its development of effects limit are arranged.Be the encapsulation problem on the one hand; the sensor package material promptly requires to have good heat-conductive characteristic; require that again sensor is had protective effect; and also need to consider the influence of encapsulating material in the design to aspects such as transducer sensitivity, reliability and prices; this has just limited the degree of freedom of sensor self package design; and thermal flow rate sensor requires the responsive part of sensor to be exposed in the measurement environment; require simultaneously treatment circuit and environment to isolate again; in order to avoid influence the performance of treatment circuit, both have produced contradiction to the requirement of encapsulation.Be the power consumption penalty problem on the other hand, the hot type wind speed wind direction sensor is to carry out the variation that wind is responded in heat interchange by heat and external environment that the heating element on it produces, what utilize is the forced convection effect, and sensor overall power consumption aspect is except comprising the thermal loss that causes owing to the forced convection effect, also comprise because the power consumption penalty that heat-conduction effect causes, this a part of power consumption cuts little ice to the perception of wind, therefore how to reduce the hot type wind speed wind direction sensor because the power loss that heat-conduction effect causes becomes the big problem of one in the sensor design.
Bao Dao silicon wind speed wind direction sensor mostly was directly exposed to the sensing surface of silicon chip in the physical environment in the past, so that can change by the extraneous wind speed of perception.So, silicon chip is easy to be subjected to various pollutions, causes the instability of its performance, even damages.If adopt the higher ceramic substrate of thermal conductivity, the mode of utilizing flip chip bonding encapsulation or heat-conducting glue to attach encapsulates the sensor silicon, just can avoid above-mentioned contradiction preferably, but the heat overwhelming majority that encapsulation back sensor produces dissipates from silicon-based substrate in heat conducting mode, only there is a very little part to carry out heat interchange by pottery and outside air, reduce the amplitude of output sensitive signal greatly, can improve the amplitude of sensitive signal by the power consumption that increases sensor, but cause the bigger power consumption of whole sensor system.
The utility model content
The purpose of this utility model provides a kind of hot type wind speed wind direction sensor with heat insulation structure.The sensor construction of design and packing forms help when guaranteeing big sensitive signal amplitude, and sensing system has lower power consumption.
The utility model adopts following technical scheme:
A kind of hot type wind speed wind direction sensor with heat insulation structure, comprise silicon and ceramic substrate, silicon is positioned at the top of ceramic substrate, be provided with 4 heating elements and 4 hot sensing temperature elements in the symmetrical distribution of upper surface four limits of silicon, it is characterized in that between heating element and hot sensing temperature element, being provided with heat dam, below the hot sensing temperature element at the back side of silicon, be provided with heat insulation cavity.
The utility model utilizes the standard CMOS process preparation in silicon heating element in the sensor and thermocouple temperature measurement element, and between heating element and thermocouple temperature measurement element, be provided with heat dam, and below the thermocouple temperature measurement element, be provided with heat insulation cavity, all preparing at the silicon back side and the basic back side of pottery has the gold layer, utilize golden gold bonding technology that silicon and ceramic substrate are bonded together, in the hot linked encapsulation that realizes simultaneously silicon that realizes between them.Because the gold layer and the ceramic substrate of golden gold bonding all have certain thermal conduction characteristic, therefore the heat of the heating element generation on the silicon can be delivered on the ceramic substrate by heat-conducting glue, therefore can set up a temperature field at ceramic base plate surface, the ceramic substrate upper surface is exposed in the external environment, go to experience the variation of wind in the temperature field that the ceramic substrate upper surface is set up by heating element, the thermocouple temperature measurement element is measured this temperature field variation in temperature distribution situation by heat-conducting glue.Under the calm condition in the external world, the distribution in temperature field presents the state of complete symmetry.When the external world has wind out-of-date from the ceramic substrate upper surface blown, wind will be taken away the heat of part in the mode of thermal convection from the ceramic substrate upper surface, the thermocouple temperature measurement element is measured the variation in this temperature field by the conduction of heat of key alloy-layer, and then can reflect the size of wind speed; The difference output of the upstream and downstream thermocouple temperature measurement element that is symmetrically distributed reflects the variation of ceramic substrate upper surface temperature field thermograde, can reflect the change information of wind direction.
Be used to the thin layer potsherd that encapsulates in the sensor construction on the one hand as the base plate for packaging that is used to protect lower floor's silicon, on the other hand again as the sensitive element of the variation of the extraneous wind of impression.Whole sensor has only the upper surface of pottery and the environment of wind to contact, and other elements are all isolated by ceramic substrate and external environment, therefore can avoid being subjected to the pollution of external environment.The gold gold bonding has been realized the hot tie-in between silicon and the ceramic substrate.Between heating element and thermocouple temperature measurement element, prepare heat dam, can completely cut off the heat conduction of silicon horizontal direction, strengthen the heat conduction of vertical direction in the sensing chip, increase the thermal resistance of horizontal direction, so that improve the sensitivity of sensor.Below silicon thermocouple temperature measurement element, prepare heat insulation cavity, can strengthen the signal intensity of thermocouple temperature measurement element, reduce the heat conduction loss of chip and the thermal capacitance of chip, and then reduce the thermal response time of chip.The design of heat insulation structural can reduce the useless power consumption that heat-conduction effect causes greatly.The structure of the utility model sensor is applicable to the wind speed wind direction sensor of preparation two dimension.
The utility model obtains following effect:
1. packaging technology of the present utility model belongs to the sensor wafer level packaging.Technology is introduced has the encapsulating material of the thin layer ceramic disks of certain thermal conductivity as sensor, the size and the silicon of potsherd are identical, utilize gold layer between silicon and the ceramic chip to realize hot tie-in between silicon and the ceramic sheet by golden gold-bonding technique, adopt this technology as realizing hot tie-in between silicon and the ceramic substrate, can guarantee good geometric configuration of the constant maintenance of hot tie-in media and material behavior, compare more reliable and more stablely with the hot linked mode of realization such as heat-conducting glue, and tool keeps the good consistance between the sensor.The form of this wafer level packaging is compared with the wind speed wind direction sensor of traditional single-chip package, greatly reduce the packaging cost of MEMS device on the one hand, guarantee the consistance of the deviation that sensor package causes on the other hand to a great extent, reduced the cost of sensor back end signal conditioning.
2. the utility model prepares heat dam between heating element and thermocouple temperature measurement element, the heat conduction that can completely cut off the silicon horizontal direction, strengthen the heat conduction of vertical direction in the sensing chip, increase the thermal resistance of horizontal direction, so that improve the sensitivity of sensor.
3. the utility model adopts MEMS anisotropic wet etching process to prepare heat insulation cavity below silicon thermocouple temperature measurement element, can strengthen the signal intensity of thermocouple temperature measurement element, reduce the heat conduction loss of chip and the thermal capacitance of chip, and then the thermal response time of reduction chip, it is low to have cost, and high conformity can accurately be controlled shape, the characteristics of one-time process moulding are highly suitable for utilizing the back-end processing of the MEMS sensor that the CMOS standard technology makes.
Description of drawings
Fig. 1 is the synoptic diagram of the preparation flow step 1 of silicon to step 4.
Fig. 2 is the synoptic diagram of the preparation flow step 5 of silicon to step 9.
Fig. 3 is the synoptic diagram of the preparation flow step 10 of silicon to step 14.
Fig. 4 is for preparing the side view of the silicon of finishing.
Fig. 5 is for preparing the top view of the silicon of finishing.
Fig. 6 is for preparing the side view of the ceramic substrate of finishing.
Fig. 7 is for preparing the top view of the ceramic substrate of finishing.
Fig. 8 is the hot tie-in that utilizes between golden gold bonding realization ceramic substrate and the silicon.
Fig. 9 is the diagrammatic cross-section of the sensor after the scribing.
Embodiment
A kind of manufacturing process of the hot type wind speed wind direction sensor with heat insulation structure is as follows:
The first step, Fig. 1 to Fig. 3 is seen in the preparation of silicon
Step 2, chemical vapor deposition silicon nitride layer 3 on first thermal oxide layer 1;
Step 3 utilizes the RIE technology that silicon 1 is carried out etching, definition active area 4;
Step 4, chemical vapor deposition second oxide layer 5;
Step 5 utilizes the CMP technology that silicon 1 is carried out polishing;
Step 7, the P ion injects, preparation N trap 7;
Step 8, heat growth gate oxide 8;
Step 10, chemical vapor deposition the 3rd oxide layer 11;
Step 11 utilizes dry etch process to prepare on the temperature thermocouple 15 through hole 20 on the through hole 12 and heating resistor 9;
Step 12 is utilized sputtering technology preparation electricity to draw with another end 13 and heating resistor 9 electricity of aluminum pad 14 and temperature thermocouple 15 and is drawn with pad 21;
Step 13 utilizes dry etch process to prepare heat dam 16 between heating resistor 9 and temperature thermocouple 15; And utilize sputter and stripping technology the preparation bonding with silicon on gold layer 19, on the silicon gold layer 19 be used for the heat insulation cavity 17 in silicon 1 back side preparation mask and carry out the gold layer that hot tie-in is used with ceramic substrate;
In second step, golden gold bonding is seen Fig. 6 to Fig. 8
Step 2 utilizes golden gold bonding technology that gold layer 19 on gold layer 18 and the silicon on the pottery is linked together, and realizes the hot tie-in between silicon 1 and the ceramic substrate 20;
In the 3rd step, the preparation of wind speed wind direction sensor is finished in scribing, sees Fig. 9.
The utility model is the scheme of a kind of CMOS of realization integrated anemograph preparation and encapsulation.The side that sensor chip contacts with wind facies in the external environment is the upper surface of ceramic substrate 20, on the pottery on gold layer 18 and the silicon gold layer 19 realize that by golden gold-bonding technique connection is with as the hot tie-in medium between silicon 1 and the ceramic substrate 20, because stupalith has certain pyroconductivity, by the heat that the heating element 9 that is positioned on the silicon 1 produces, can set up the distribution in certain temperature field at the upper surface of ceramic substrate 20.This temperature field distributes and is symmetrical distribution around ceramic substrate 20 centers under calm condition; Exist in external environment under the condition of certain wind speed, this symmetrical distribution is broken, and generates a temperature gradient field, and the direction of gradient direction and wind direction is consistent.4 thermocouple temperature measurement elements be symmetric configuration be distributed in heating element 9 around.The thermal conduction characteristic that the temperature field of ceramic substrate 20 upper surfaces can utilize pottery to go up gold layer 19 on gold layer 18 and the silicon is passed to the thermocouple temperature measurement element, and then measures the change of temperature field situation of ceramic substrate 20 upper surfaces.Output signal to 4 thermocouple temperature measurement elements is handled, and just can obtain the information of wind speed and direction in the external environment.
Traditional CMOS integrated anemograph, the heating element of sensor and temperature element all are made in the silicon surface, and form and the ceramic substrate that attaches with flip chip bonding upside-down mounting or heat-conducting glue realized encapsulation then.Because the thermal conductivity far of silicon is much larger than the thermal conductivity of pottery, therefore the heat overwhelming majority that heating element produces on the silicon of encapsulation back dissipates in heat conducting mode from silicon substrate, only have only a spot of heat to produce the thermal convection heat exchange by ceramic substrate and air, greatly reduce signal of sensor so on the one hand, improve the operating power of sensor on the other hand, reduced the usefulness of sensor.Based on this problem, forefathers propose at silicon substrate back side making cavity or make the heat conduction that one deck porous silicon is used to reduce silicon substrate under heating elements, so just the encapsulation of sensor or the consistance and the CMOS processing compatibility of technology have been proposed challenge.
In the utility model, prepare heat dam between heating element in silicon and the thermocouple temperature measurement element, can completely cut off the heat conduction of silicon horizontal direction, strengthen the heat conduction of vertical direction in the sensing chip, increase the thermal resistance of horizontal direction, so that improve the sensitivity of sensor.Below silicon thermocouple temperature measurement element, prepare heat insulation cavity, can strengthen the signal intensity of thermocouple temperature measurement element, reduce the heat conduction loss of chip and the thermal capacitance of chip, and then reduce the thermal response time of chip.The design of heat insulation structural can reduce the useless power consumption that heat-conduction effect causes greatly.Utilize golden gold bonding technology to realize that hot tie-in between silicon and the ceramic chip can guarantee geometry and the reliability of material behavior and the consistance between the sensor of hot tie-in media.
Embodiment 2
A kind of hot type wind speed wind direction sensor with heat insulation structure, comprise silicon 1 and ceramic substrate 20, silicon 1 is positioned at the top of ceramic substrate 20, be provided with 4 heating elements 9 and 4 hot sensing temperature elements 15 in the symmetrical distribution of upper surface four limits of silicon 1, it is characterized in that between heating element 9 and hot sensing temperature element 15, being provided with heat dam 16, below the hot sensing temperature element 15 at the back side of silicon 1, be provided with heat insulation cavity 17, be provided with pottery between silicon 1 and the ceramic substrate 20 and go up gold layer 19 on gold layer 18 and the silicon, and on the pottery on gold layer 18 and the silicon gold layer 19 be connected by golden gold bonding technology realization, be used for the hot tie-in between silicon 1 and the ceramic substrate 20.
Claims (2)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206584028U CN201886035U (en) | 2010-12-14 | 2010-12-14 | Thermal type wind-speed and wind-direction sensor with thermal-insulating structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010206584028U CN201886035U (en) | 2010-12-14 | 2010-12-14 | Thermal type wind-speed and wind-direction sensor with thermal-insulating structure |
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| CN201886035U true CN201886035U (en) | 2011-06-29 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102095888A (en) * | 2010-12-14 | 2011-06-15 | 东南大学 | Heat-type wind-speed and wind-direction sensor with heat insulation structure and preparation method thereof |
| CN105319387A (en) * | 2015-12-03 | 2016-02-10 | 东南大学 | Alternating current self-heating type wind speed and wind direction sensor and measurement method using same |
| CN105547371A (en) * | 2016-01-19 | 2016-05-04 | 东南大学 | Two-dimensional thermal-type wind speed and directions sensor based on ceramic packaging, and manufacturing method therefor |
| CN105675917A (en) * | 2016-01-19 | 2016-06-15 | 东南大学 | Thermal type wind speed sensor and packaging method thereof |
| CN104535792B (en) * | 2015-01-16 | 2017-04-19 | 东南大学 | High-sensitive hot wind speed sensor structure and wind speed and wind direction measuring method |
| CN107830967A (en) * | 2017-10-31 | 2018-03-23 | 无锡职业技术学院 | A kind of MEMS air differential pressures sensor |
| CN113092809A (en) * | 2021-04-09 | 2021-07-09 | 东南大学 | Film type wind speed and direction sensor with front wind sensing surface and back lead wire and manufacturing method thereof |
-
2010
- 2010-12-14 CN CN2010206584028U patent/CN201886035U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102095888A (en) * | 2010-12-14 | 2011-06-15 | 东南大学 | Heat-type wind-speed and wind-direction sensor with heat insulation structure and preparation method thereof |
| CN102095888B (en) * | 2010-12-14 | 2012-07-18 | 东南大学 | Heat-type wind-speed and wind-direction sensor with heat insulation structure and preparation method thereof |
| CN104535792B (en) * | 2015-01-16 | 2017-04-19 | 东南大学 | High-sensitive hot wind speed sensor structure and wind speed and wind direction measuring method |
| CN105319387A (en) * | 2015-12-03 | 2016-02-10 | 东南大学 | Alternating current self-heating type wind speed and wind direction sensor and measurement method using same |
| CN105319387B (en) * | 2015-12-03 | 2019-12-03 | 东南大学 | An AC self-heating wind speed and direction sensor and its measuring method |
| CN105547371A (en) * | 2016-01-19 | 2016-05-04 | 东南大学 | Two-dimensional thermal-type wind speed and directions sensor based on ceramic packaging, and manufacturing method therefor |
| CN105675917A (en) * | 2016-01-19 | 2016-06-15 | 东南大学 | Thermal type wind speed sensor and packaging method thereof |
| CN105547371B (en) * | 2016-01-19 | 2018-05-08 | 东南大学 | Two-dimentional hot type wind speed wind direction sensor based on ceramic package and preparation method thereof |
| CN105675917B (en) * | 2016-01-19 | 2018-11-16 | 东南大学 | A kind of hot type air velocity transducer and its packaging method |
| CN107830967A (en) * | 2017-10-31 | 2018-03-23 | 无锡职业技术学院 | A kind of MEMS air differential pressures sensor |
| CN107830967B (en) * | 2017-10-31 | 2019-11-26 | 无锡职业技术学院 | A kind of MEMS air differential pressure sensor |
| CN113092809A (en) * | 2021-04-09 | 2021-07-09 | 东南大学 | Film type wind speed and direction sensor with front wind sensing surface and back lead wire and manufacturing method thereof |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110629 Termination date: 20121214 |