CN201622299U - Novel giant magneto resistance GMR integrated current sensor - Google Patents
Novel giant magneto resistance GMR integrated current sensor Download PDFInfo
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- CN201622299U CN201622299U CN2009201533597U CN200920153359U CN201622299U CN 201622299 U CN201622299 U CN 201622299U CN 2009201533597 U CN2009201533597 U CN 2009201533597U CN 200920153359 U CN200920153359 U CN 200920153359U CN 201622299 U CN201622299 U CN 201622299U
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- 229910003321 CoFe Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 210000004276 hyalin Anatomy 0.000 claims description 9
- 230000005389 magnetism Effects 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000003302 ferromagnetic material Substances 0.000 claims description 7
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- 239000002131 composite material Substances 0.000 claims description 6
- 230000005294 ferromagnetic effect Effects 0.000 claims description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 5
- 230000035699 permeability Effects 0.000 claims description 4
- 229910003289 NiMn Inorganic materials 0.000 claims description 3
- 229910019041 PtMn Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000005259 measurement Methods 0.000 abstract description 5
- 238000012360 testing method Methods 0.000 abstract description 5
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
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Abstract
The utility model relates to a novel giant magneto resistance GMR integrated current sensor and belongs to the technical field of current measurement devices. The utility model aims to solve the detects of a current transformer and a hall current sensor like narrow test frequency range, large volume, higher energy consumption, and worse temperature characteristic in the prior art. The integrated current sensor is characterized in that four GMR magneto-sensitive resistance units positioned on a base, a GMR Wheatstone bridge formed by electrically connecting the four magneto-sensitive resistance units and an integrated current lead positioned above the GMR Wheatstone bridge are included. The integrated lead and the GMR Wheatstone bridge are isolated by an insulating layer. The utility model has the advantages that the current flowing into the integrated current lead is detected by the GMR Wheatstone bridge; a magnetic signal generated by the current is converted into an electric signal to output, the response speed is quick, the test frequency range is wide, and the stability is good. The integrated current sensor has simple process, convenient manufacture, small volume and low cost through forming a laminated structure for a fine process.
Description
[technical field]
The utility model relates to a kind of GMR integrated current sensors that is used to measure direct current, interchange, pulse current, and specifically a kind of novel giant magnetoresistance integrated current sensors belongs to the current measuring device technical field.
[background technology]
Current sensor is used for surveying and isolation measurement direct current, alternating current, is widely used in industrial instrument, industrial process is controlled and PCB galvanoscopy etc.Testing current device or the device that extensively adopts mainly contains (Fig. 1, shown in Figure 2) such as current transformer, Hall current sensors at present.Current transformer detects by the major loop isolation, but its test frequency narrow range.Hall current sensor utilizes Hall element to measure the induction of tested electric current in iron core air gap to judge tested size of current.The volume of Hall element is big, and energy consumption is higher, and temperature characterisitic is relatively poor.Eighties of last century the eighties latter stage, scientific circles have found that (Giant Magneto-Resistive, GMR), promptly the resistivity of magnetic material is having external magnetic field to make there is great variety in the time spent as the time spent than no external magnetic field phenomenon to giant magnetoresistance effect.It results from the magnetic film structure of stratiform, and this structure is to be formed by stacking by ferromagnetic material and nonferromagnetic material interlaminate.The direction of ferromagnetic material magnetic moment is to be controlled by the external magnetic field that is added to ferromagnetic material, the variation of magnetic resistance is proportional to external magnetic field, thereby can realize converting the magnetic field variable to electric weight, therefore, can design a kind of novel giant magnetoresistance integrated current sensors according to giant magnetoresistance effect.
[utility model content]
The technical assignment of the technical problems to be solved in the utility model and proposition is the defective that overcomes prior art, and a kind of measurement that is specially adapted to little electric current is provided, and response speed is fast, precision is high, the novel giant magnetoresistance integrated current sensors of good stability.For this reason, the utility model adopts following technical scheme:
Novel giant magnetoresistance integrated current sensors, it is characterized in that comprising: be positioned at suprabasil 4 GMR mistor unit and GMR Wheatstone bridge that electrical connection constituted thereof, be positioned at the integrated current lead of GMR Wheatstone bridge top, isolate by a layer insulating between described integral wire and the GMR Wheatstone bridge.When tested electric current passed through the integrated current lead, the magnetic field that electric current produces can be detected by the GMR Wheatstone bridge and magnetic signal is converted to electric signal output.Therefore, when flowing through the integrated current lead, electric current can around it, produce magnetic field, based on giant magnetoresistance effect, the significant change of the inducible magnetic material resistivity of small changes of magnetic field, novel sensor of the present utility model can be responded to this magnetic field sensitive and accurately, can convert magnetic signal to electric signal accurately, and then the size output of tested electric current can be detected.Rely on the high sensitivity and the good frequency characteristic of giant magnetoresistance, this current sensor can provide accurate and reliable solution for the current measurement of different field.In addition,, four giant magnetoresistances and lead are integrated in a kind of specific mode, can realize miniaturization of devices and low-power consumption by Micrometer-Nanometer Processing Technology.
For the improving and replenishing of technique scheme, can increase following technical characterictic or its combination:
Described GMR mistor unit is made up of the snakelike resistance that GMR Spin Valve material is etched into.Snakelike resistance good uniformity can accurately and observantly be surveyed the size and the variation of external magnetic field, and Spin Valve material etching is made, and is convenient to produce, and cost is lower.
Described GMR Spin Valve material is a multi-layer film structure, comprises the pinning layer, nailed layer, non-magnetic hyaline layer and the free ferromagnetic that are arranged in order from top to bottom.Wherein pinning layer is an antiferromagnetic substance, and nailed layer and free ferromagnetic are ferromagnetic material, and non magnetic hyaline layer has been the non-magnetic material of buffer action.Pinning layer with the magnetic moment " pinning " of nailed layer in some fixing directions.When nailed layer was parallel with the magnetic moment direction of free magnet layer, this structure was low resistance state; When both magnetic moment direction antiparallel, this structure is high-impedance state.Therefore, the resistance value that the multi-layer film structure of Spin Valve material produces can change with the variation of external magnetic field, this characteristic can be used for detecting the electromagnetic field that is produced when integrated current lead is switched on, and its measurement range and precision are better than sensor construction of the prior art.
Described free ferromagnetic material can be the composite bed of NiFeCo alloy-layer, CoFe alloy-layer or two kinds of alloy combination.
Described non-magnetic hyaline layer is the Cu metal level.
Described nailed layer can be the composite bed that NiFeCo alloy-layer, CoFe alloy-layer or ordering are CoFe alloy-layer/Ru metal level/CoFe alloy-layer.
Described pinning layer can be IrMn alloy-layer, NiMn alloy-layer, PtMn alloy-layer or CrPtMn alloy-layer.
GMR mistor cell operation is under linear model: the direction of magnetization of nailed layer is fixed on the magnetic-field-sensitive direction by the exchange coupling with antiferromagnetic pinning layer.And the direction of magnetization of free layer is not fixed, and can rotate with signal magnetic field.When not having externally-applied magnetic field, the direction of magnetization of free layer becomes 90 ° with sensitive direction.When electric current passes through coil, will on the magnetic-field-sensitive direction, produce magnetic field, and then cause that the resistance of GMR unit produces the variable quantity of Δ R.
Described 4 GMR mistor unit and integrated current lead top are provided with one or more the soft magnetism screen layers formed by soft magnetic material Ni, the Fe of high magnetic permeability, NiFe alloy, NiFeB alloy.
For further improving device performance, the interference in the external magnetic field of shielding and the output that further increases electric bridge, on GMR electric bridge and integral wire, can add one deck soft magnetism screen layer, this soft magnetism screen layer is made up of one or more of soft magnetic material Ni, the Fe of high magnetic permeability, NiFe alloy, NiFeB alloy, its function is the influence of shielding external magnetic field to GMR mistor unit, simultaneously when tested electric current feeds the integrated current lead, it can also strengthen that electric current produces makes in magnetic field intensity on GMR mistor unit.In other words, it can not only improve the anti-external magnetic field interference performance of sensor and can also improve sensor to the sensitivity of electric current and then the output of increase electric bridge.
Described 4 GMR mistor unit comprise first resistance, second resistance, the 3rd resistance and the 4th resistance, described first resistance and the 3rd resistance are positioned at the input section of integrated current lead, described second resistance and the 4th resistance are positioned at the deferent segment of integrated current lead, and the relative position of described 4 GMR mistor unit and integrated current lead forms output " pushing away-pull-up structure ".
Because four resistance of GMR mistor unit are positioned at the input section of integrated current lead, the diverse location of deferent segment, when having electric current to flow through generation magnetic field in the integrated current lead, wherein the resistance of two resistance increases, and two other resistance reduces.Wheatstone bridge is with regard to out of trim like this, and its output is directly proportional with measured current I in the integrated current lead.
The utility model utilizes the GMR Wheatstone bridge to detect the electric current that flows through in the integrated current lead, the magnetic signal that electric current is produced is converted to electric signal output, response speed is fast, the test frequency scope is wide, good stability, can be by making layer structure for retrofit technology, technology is simple, be convenient to make, volume is little, cost is low.
[description of drawings]
Fig. 1 is the fundamental diagram of the current transformer of prior art;
Fig. 2 is the fundamental diagram of prior art Hall current sensor;
Fig. 3 is the structural representation of the utility model embodiment;
Fig. 4 is the structural representation of GMR Spin Valve material among the utility model embodiment;
Fig. 5 is the structural representation of the snakelike resistance of GMR among the utility model embodiment;
Fig. 6 is the response speed curve map of the utility model embodiment;
Fig. 7 is the simplification electrical block diagram of GMR Wheatstone bridge among the utility model embodiment;
Fig. 8 is the domain synoptic diagram of the utility model embodiment.
Among the figure: 1, pinning layer, 2, nailed layer, 3, non-magnetic hyaline layer, 4, free ferromagnetic, 5, the soft magnetism screen layer, 6, substrate, 7, insulation course, r
1, GMR mistor and integrated current lead distance, r
2, the input section of integrated current lead and the distance of deferent segment, R1, first resistance, R2, second resistance, R3, the 3rd resistance, R4, the 4th resistance.
[embodiment]
Below in conjunction with specification drawings and specific embodiments substantive distinguishing features of the present utility model is further described.
Fig. 1, Fig. 2 are respectively the fundamental diagram of current transformer in the prior art, Hall current sensor.
As shown in Figure 3, novel giant magnetoresistance integrated current sensors, comprise: be positioned at 4 GMR mistor unit R 1, R2, R3, R4 in the substrate 6 and GMR Wheatstone bridge that electrical connection constituted thereof, be positioned at the integrated current lead of GMR Wheatstone bridge top, isolate by a layer insulating 7 between integral wire and the GMR Wheatstone bridge.4 GMR mistor unit and integrated current lead top are provided with soft magnetism screen layer 5.4 GMR mistor unit comprise first resistance, second resistance, the 3rd resistance and the 4th resistance, described first resistance and the 3rd resistance are positioned at the input section of integrated current lead, and described second resistance and the 4th resistance are positioned at the deferent segment of integrated current lead.Soft magnetism screen layer 5 is made up of one or more of soft magnetic material Ni, the Fe of high magnetic permeability, NiFe alloy, NiFeB alloy.In this novel practical design, between GMR Wheatstone bridge and integrated current lead because of accompanying an insulation course 7 (as Si
3N
4Or Al
2O
3) and isolate mutually.
The relative position of 4 GMR mistor unit and integrated current lead forms output " pushing away-pull-up structure ".This structure can make the output maximization of sensor.4 GMR mistor unit R 1, R2, R3, R4 among the figure are set directly at apart from r under the integral wire
1The place, wherein R1 and R3 are positioned at the below of electric current input lead section, and R2 and R4 are positioned at the below of electric current output lead section.The intersegmental distance of input lead section and output lead is r
2Under this set, in the integrated current lead, be connected with forward current/time, the input lead section is opposite at the magnetic direction of R2 and the generation of R4 place in the magnetic direction and the output lead section of R1 and the generation of R3 place, makes sensor unit R1 and R3 opposite with the resistance variations direction of R2 and R4.As: R1 and R3 increase, and then R2 and R4 reduce; The resistance of R1, R3 reduces, and then the resistance of R2, R4 increases.Wheatstone bridge out of trim like this, its output and adding electric current/be directly proportional.Its output voltage is:
Wherein:
r
1: the distance between magneto-dependent sensor and the integral wire (um)
r
2: the distance (um) between input integral wire and output integral wire
I: the electric current (mA) that flows through integral wire
H
Eff: the effective anisotropy in the free layer can Equivalent Magnetic Field (Oe)
Vcc: supply voltage (mV)
Vout: bridge output voltage (mV)
Shown in Fig. 4,5,6, GMR mistor unit is made up of the snakelike resistance that GMR Spin Valve material is etched into.GMR Spin Valve material is a multi-layer film structure, comprises the pinning layer 1, nailed layer 2, non-magnetic hyaline layer 3 and the free ferromagnetic 4 that are arranged in order from top to bottom.The free ferromagnetic material can be the composite bed of NiFeCo alloy-layer, CoFe alloy-layer or two kinds of alloy combination.Non-magnetic hyaline layer is the Cu metal level.Nailed layer can be the composite bed that NiFeCo alloy-layer, CoFe alloy-layer or ordering are CoFe alloy-layer/Ru metal level/CoFe alloy-layer.Pinning layer can be IrMn alloy-layer, NiMn alloy-layer, PtMn alloy-layer or CrPtMn alloy-layer.The direction of magnetization of nailed layer is fixed on vertically (y direction) by the exchange coupling with antiferromagnetic pinning layer.And the direction of magnetization of free layer is not fixed, and can rotate with the variation in signal magnetic field.The resistance change Δ R of GMR mistor unit changes with the free layer direction of magnetization, and is proportional to the sine value at free layer direction of magnetization and x axle clamp angle.Can be released by energy balance relations, therefore Δ R also is proportional to the magnetic field intensity of its induction.
What provide as shown in Figure 7, is to simplify the wheatstone bridge circuits that extracts by Fig. 3.
As shown in Figure 8, soft magnetism screen layer 5 be integrated in GMR electric bridge and current lead directly over, can adopt the NiFe alloy-layer.It not only acts on magnetic field on the GMR mistor unit to what the interference of GMR Wheatstone bridge can strengthen also that electric current in the integrated current lead produces by its magnetic buildup effect in the external magnetic field of maskable.In principle, the magnetic field of enhancing at most can be near the twice in magnetic field that electric current produces of unshielded when layer.Like this, the GMR Wheatstone bridge improves greatly to the sensitivity meeting of electric current, thereby output is further strengthened.
During actual the manufacturing, deposition GMR multilayer film in the substrate now, be followed successively by free ferromagnetic 4, non-magnetic hyaline layer 3, nailed layer 2, pinning layer 1, etching forms GMR mistor unit then, depositing insulating layer, the etching insulation course forms contact hole again, deposition connects metal, with the line between the metal level etching formation GMR mistor unit, make four GMR mistor unit constitute Wheatstone bridge, depositing insulating layer 7 for the second time then, Wheatstone bridge and integrated current lead are thoroughly isolated, also can be according to production Standard Selection plating soft magnetism screen layer 5, deposit passivation layer and etching passivation layer to be forming the through hole of connection pads, cutting and encapsulation during after finishing the components and parts manufacture craft, just can carrying out, thus make the GMR integrated current sensors.According to the difference of using, encapsulation can be adopted the form of using more.
Manufacturing of the present utility model need be utilized as the retrofit technology, and the components and parts manufacturing process is simple, by completing after a series of little retrofit technologies such as process deposition, etching, plating, passivation on the original substrate.
More than novel giant magnetoresistance integrated current sensors shown in the drawings be specific embodiment of the utility model, the utility model substantive distinguishing features and progress have been embodied, can be according to the use needs of reality, making amendment in aspects such as circuit, specification, material and arrangement mode to GMR mistor unit and Wheatstone bridge, seldom gives unnecessary details at this.
Claims (9)
1. novel giant magnetoresistance integrated current sensors, it is characterized in that comprising: be positioned at suprabasil 4 GMR mistor unit and GMR Wheatstone bridge that electrical connection constituted thereof, be positioned at the integrated current lead of GMR Wheatstone bridge top, isolate by a layer insulating between described integral wire and the GMR Wheatstone bridge.
2. novel giant magnetoresistance integrated current sensors according to claim 1 is characterized in that described GMR mistor unit is made up of the snakelike resistance that GMR Spin Valve material is etched into.
3. novel giant magnetoresistance integrated current sensors according to claim 2 is characterized in that described GMR Spin Valve material is a multi-layer film structure, comprises the pinning layer, nailed layer, non-magnetic hyaline layer and the free ferromagnetic that are arranged in order from top to bottom.
4. novel giant magnetoresistance integrated current sensors according to claim 3 is characterized in that described free ferromagnetic material can be the composite bed of NiFeCo alloy-layer, CoFe alloy-layer or two kinds of alloy combination.
5. novel giant magnetoresistance integrated current sensors according to claim 3 is characterized in that described non-magnetic hyaline layer is the Cu metal level.
6. novel giant magnetoresistance integrated current sensors according to claim 3 is characterized in that described nailed layer can be the composite bed that NiFeCo alloy-layer, CoFe alloy-layer or ordering are CoFe alloy-layer/Ru metal level/CoFe alloy-layer.
7. novel giant magnetoresistance integrated current sensors according to claim 3 is characterized in that described pinning layer can be IrMn alloy-layer, NiMn alloy-layer, PtMn alloy-layer or CrPtMn alloy-layer.
8. according to the described novel giant magnetoresistance integrated current sensors of the arbitrary claim of claim 1-7, it is characterized in that described 4 GMR mistor unit and integrated current lead top is provided with one or more the soft magnetism screen layers formed by soft magnetic material Ni, the Fe of high magnetic permeability, NiFe alloy, NiFeB alloy.
9. according to the described novel giant magnetoresistance integrated current sensors of the arbitrary claim of claim 1-7, it is characterized in that described 4 GMR mistor unit comprise first resistance, second resistance, the 3rd resistance and the 4th resistance, described first resistance and the 3rd resistance are positioned at the input section of integrated current lead, described second resistance and the 4th resistance are positioned at the deferent segment of integrated current lead, and the relative position of described 4 GMR mistor unit and integrated current lead forms output " pushing away-pull-up structure ".
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| CN102043083A (en) * | 2010-11-23 | 2011-05-04 | 中国科学院电工研究所 | Giant magnetoresistance array current sensor |
| CN102288927A (en) * | 2011-06-28 | 2011-12-21 | 钱正洪 | Giant magnetoresistance (GMR) spin valve magnetic sensor and manufacturing method thereof |
| CN102298126A (en) * | 2011-01-17 | 2011-12-28 | 江苏多维科技有限公司 | Independent packaged bridge-type magnetic-field sensor |
| CN102323554A (en) * | 2011-05-17 | 2012-01-18 | 杭州电子科技大学 | Giant magnetoresistance magnetic sensor with integrated coil bias |
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