CN201228282Y

CN201228282Y - Composite material surface modification apparatus assisted by pulse high energy density plasma

Info

Publication number: CN201228282Y
Application number: CNU2007203090490U
Authority: CN
Inventors: 杨思泽
Original assignee: Individual
Current assignee: Individual
Priority date: 2007-12-24
Filing date: 2007-12-24
Publication date: 2009-04-29
Anticipated expiration: 2017-12-24

Abstract

The utility model discloses a multi-plasma-source composite material surface modification device based on pulsed high-energy-density plasma. The multi-plasma source composite material surface modification device comprises a vacuum chamber, a pulsed high-energy-density plasma gun, a large-power vacuum cathode arc plasma source, and a hot filament gas plasma source, wherein the pulsed high-energy-density plasma gun and the large-power vacuum cathode arc plasma source are respectively symmetrically arranged on ports A (A') and B (B') of the vacuum chamber; the hot filament gas plasma source is arranged on the port C of the vacuum chamber; and a rotary sample stage B with adjustable rotation speed is also arranged on the bottom of the vacuum chamber. The surface modification device has three plasma sources to introduce a plurality of plasma mechanisms in the same device, so that metal ions and gas ions coexist to enhance the reaction efficiency and enhance the film formation quality. The multi-plasma-source composite material surface modification device suits surface deposition implantation of various kinds of metal, non-metal, organic and inorganic materials including the ceramic material.

Description

Pulse high-energy density plasma auxiliary multi-source composite material surface modification device

Technical Field

The utility model relates to an application field of low temperature plasma technique, in particular to surface treatment device of all-round ion implantation of many plasmas and deposit based on high energy density plasma. The method is suitable for surface treatment of various metal, nonmetal, organic and inorganic materials including ceramic materials.

Background

The low-temperature plasma technology is widely applied to the industrial fields of semiconductors, microelectronics, optics, medicine, material surface treatment and the like, and is particularly widely applied to the preparation of thin film materials and the modification of material surfaces. In 1988, professor j.r.conrad, university of wisconsin, usa, proposed a Plasma Source Ion Implantation (PSII) technique, which is also known as Plasma Immersion Ion Implantation (PIII). Then, the material surface modification method and device based on the technology are rapidly developed. The existing multi-plasma omnibearing ion injection and deposition device (CN 95118169.6, CN 92111475.3) can only realize plasma immersion ion injection on metal materials, but can only carry out deposition treatment on non-metal materials (CN 95221951.4), and particularly is difficult to carry out injection treatment on ceramic materials. In the case of ceramic materials, where metal or other materials are deposited directly on the surface, the bonding of the membrane to the substrate is difficult to ensure. Even for metallic materials, ion implantation and deposition have difficulty forming an alloy phase between the film and the substrate, and in most cases, require subsequent processing.

The high energy density plasma melts the metal and forms a strong alloy layer between the film and the substrate. For example, the pulsed high energy density plasma technology described in "Physics" 2002, 8 th page 510 "pulsed high energy density plasma film preparation and material surface modification" has been successfully prepared by the present applicant₃N₄BN and diamond-like carbon films, Cu grows on the surface of alumina ceramic to realize metallization of the surface of the ceramic, and high-hardness high-wear-resistance films such as TiCN, TiAlN and the like grow on the surface of a hard alloy cutter to obtain good effects. However, the surface roughness of the sample after the pulse high-energy density plasma treatment is large, and for a sample with a large area, a discontinuous interface is easy to appear at the beam spot junction, so that the surface treatment effect is not uniform.

Today, the requirement for material performance is higher and higher, and a single metal ion source device or a single gas ion source device cannot meet the actual requirement. In addition, for the vacuum arc plasma source frequently used by the multi-component plasma, the combination of the film and the substrate can not be well solved in the film deposition process because of the high vacuum arc deposition rate.

Disclosure of Invention

The utility model aims at providing a composite plasma material processing device which can realize the rapid injection, deposition modification and high film-substrate bonding strength of any substrate material to make up the defects of the prior art.

The utility model provides a technical scheme that its technical problem adopted is: in order to achieve the purpose, a multi-element composite plasma source ion implantation and deposition device based on a high-energy density plasma gun is constructed. The utility model discloses supplementary multisource combined material surface modification device of pulse high energy density plasma includes: the vacuum chamber 1 has a diameter of 850mm and a height of 1200mm, the high energy density plasma gun 2 is A, A ', the high power high speed vacuum arc metal plasma source 3 is B, B', the hot wire gas plasma source 4 is C and the rotating planet sample stage 5 is D. Pulsed high energy density plasma guns are provided at the a and a' positions of the vacuum chamber 1 (see fig. 2); the high-power high-speed vacuum arc metal plasma sources are arranged at the positions B and B' of the vacuum chamber 1 (see figure 3); a hot filament gas plasma source is installed at the position C of the vacuum chamber 1 (see FIG. 4); a rotary sample stage with adjustable rotation speed is mounted at the bottom, position D, of the vacuum chamber 1 (see fig. 5).

Further, the pulsed high energy density plasma gun (see fig. 2) includes: the coaxial electrode gun, the magnetic coil, the direct current power supply and the control system. The number of the high energy density plasma sources can be 1 or more, and one high energy density plasma source is respectively arranged at the A position and the A' position. A. A 'is in the same plane with the central axis of the vacuum chamber 1, and A, A' is symmetrically distributed perpendicular to the axis. The control power supply of the high-energy density plasma gun can realize pulse or quasi-continuous discharge. .

Further, the high-power high-speed vacuum arc metal plasma source (see fig. 3) comprises: the cathode, the trigger electrode, the magnetic field coil and the corresponding power supply and control system. The number of the high-power high-speed vacuum arc metal plasma sources can be 1 or more, and one is respectively arranged at the positions B and B'. The central axis of B and the central axis of B 'form a certain angle with the central axis of the vacuum chamber 1, and B' are symmetrically distributed about the central axis of the vacuum chamber 1; the cathode is positioned on the central axis of the B; the trigger electrode is parallel to the cathode; the magnetic field coil is arranged around the cathode and coaxial with the cathode.

Further, the hot wire gas plasma source (see fig. 4) includes: tungsten filament, binding post, magnetic field coil and bracket; the tungsten wire is arranged in the circular bracket C4 through a binding post, and the magnetic field coil is arranged around the circular bracket C4.

Further, the cathode material of the high-power high-speed vacuum arc metal plasma source is titanium, tantalum, copper, gold, graphite or any other conductive material or alloy material.

Furthermore, the rotary sample table comprises a substrate frame and a sample table, the substrate frame is uniformly distributed on the sample table through the circumference of a planetary gear set, the stepping motor and the alternating current speed regulating motor are respectively arranged on the insulating shaft sleeve of the sample table through transmission shafts, and an external circuit provides controllable direct current or pulse negative bias voltage for the sample table and the substrate table.

Further, the types and positions of the pulsed high energy density plasma gun, the high power vacuum cathode arc plasma source and the hot filament ion source can be combined at will.

The utility model has the advantages that: (1) the device is provided with a plurality of plasma sources, the functions are complementary, and the film forming quality is improved through reasonable process control; (2) the introduction of the multi-arc plasma into the same device is realized, so that metal ions and gas ions coexist, the reaction efficiency is improved, and an ideal chemical proportion can be obtained; (3) the vacuum chamber has large scale, and the sample table can rotate, so that the workpiece can be uniformly processed in a large area; (4) direct current or pulse negative bias is provided for the workpiece, so that the film-substrate binding force can be improved, and the film forming quality and efficiency can be improved; (5) according to the characteristics of the device, the device can efficiently and uniformly process workpieces with irregular shapes, and can form a good film-based bonding layer on non-metal workpieces such as ceramics.

Drawings

The present invention will be described in further detail with reference to the accompanying drawings and embodiments.

Fig. 1 is a schematic structural diagram of the device of the present invention.

Fig. 2 is a schematic diagram of the structure of the pulsed high energy density plasma gun according to the present invention.

Fig. 3 is a schematic view of a part of the structure of the high-speed vacuum arc metal plasma source of the device of the present invention.

FIG. 4 is a schematic diagram of a partial structure of a hot filament gas plasma source of the device of the present invention.

Fig. 5 is a schematic view of the structure of the rotary sample stage of the device of the present invention.

Fig. 1 is a schematic view of the structure of the device of the present invention.

Reference symbols of the drawings

1 vacuum chamber

2 high energy density plasma gun (A and A' are symmetrically arranged and have the same structure)

3 high-power high-speed vacuum arc metal plasma source (B and B' are symmetrically arranged and have the same structure)

4 Hot filament gas plasma source (C)

5 rotating planet sample table (D)

FIG. 2 is a schematic diagram of a pulsed high energy density plasma gun.

Reference symbols of the drawings

A1, center electrode A2, cylinder outer electrode A3, solenoid valve coil

A4, magnetic needle A5 of electromagnetic valve, air inlet valve A6, and bakelite

FIG. 3 is a schematic diagram of a high-speed vacuum arc metal plasma source.

Reference symbols of the drawings

B1, cathode B2, trigger electrode B3 and magnetic field coil

B4, water inlet B5, water outlet B6, and anode

FIG. 4 is a schematic diagram of a hot filament gas plasma source configuration.

Reference symbols of the drawings

C1, tungsten wire C2, binding post C3, field coil C4 and bracket

FIG. 5 is a schematic view of a rotary sample stage.

Reference symbols of the drawings

D1, main disc D2, sample holder D3, planet gear D4 and stepping motor

D5, bevel gear D6, oil seal D7, high-voltage power supply D8, water cooling

Detailed Description

As shown in fig. 1, the utility model discloses supplementary multisource combined material surface modification device of pulse high energy density plasma includes: the vacuum chamber 1 has a diameter of 850mm and a height of 1200mm, the high energy density plasma gun 2 is A, A ', the high power high speed vacuum arc metal plasma source 3 is B, B', the hot wire gas plasma source 4 is C and the rotating planet sample stage 5 is D. Pulsed high energy density plasma guns are provided at the a and a' positions of the vacuum chamber 1 (see fig. 2); the high-power high-speed vacuum arc metal plasma sources are arranged at the positions B and B' of the vacuum chamber 1 (see figure 3); a hot filament gas plasma source is installed at the position C of the vacuum chamber 1 (see FIG. 4); a rotary sample stage with adjustable rotation speed is mounted at the bottom, position D, of the vacuum chamber 1 (see fig. 5). Wherein,

the high energy density plasma guns a and a' include: the device comprises a center electrode A1, a cylinder outer electrode A2, a solenoid valve coil A3, a solenoid valve magnet needle A4, an air inlet valve A5 and bakelite A6. A direct current high voltage is applied between the central electrode and the outer electrode of the cylinder, the electromagnetic valve magnetic needle is opened under the action of the electromagnetic valve coil by opening the air inlet valve, and the gas enters between the cylinder electrode and the central electrode to generate high-energy-density plasma through discharge;

the high power vacuum cathode arc plasma sources B and B' include: the cathode B1, the trigger electrode B2, the magnetic field coil B3, the water inlet B4, the water outlet B5 and the anode B6, wherein the cathode B1 can be made of metal or alloy and can generate metal plasma;

the hot filament ion source C includes: the gas plasma generating device comprises a tungsten wire C1, a binding post C2, a magnetic field coil C3 and a bracket C4, wherein the tungsten wire C1 is arranged in the bracket C4 through a binding post C2, and a hot filament ion source C generates gas plasma through heating of the tungsten wire C1 and the action of an electromagnetic field;

the three plasma sources can work simultaneously, and an atmosphere in which metal ions and gas ions coexist can be formed in the vacuum chamber;

the rotary sample stage D includes: the device comprises a main disc D1, a sample holder D2, a planetary gear D3, a stepping motor D4, a bevel gear D5, an oil seal D6, a high-voltage power supply D7 and a water cooling D8, wherein the planetary gear D3 is a gear set and is uniformly distributed around a main disc D1, the main disc D1 rotates to drive the planetary gear D3 to rotate, the sample holder D2 is located on a planetary gear D3, and the high-voltage power supply D7 provides controllable direct current or pulse negative bias for the sample holder D2. The fully ionized metal ions and gas ions are easy to react and reach all parts of the surface of the sample under the action of negative bias voltage, so that a large-area modified layer which is ideal in chemical proportion, has a certain thickness, high film-substrate bonding strength, uniform and fine particles can be obtained, and the surface of a workpiece (including a workpiece with a complex shape which is difficult to process) is rapidly and efficiently strengthened.

In addition, the types and positions of the pulsed high-energy density plasma gun A, the high-power high-speed vacuum arc metal plasma source B and the hot wire gas plasma source C can be combined and used at will, and when a large piece needs to be processed, more pulsed high-energy density plasma guns A, high-power vacuum cathode arc plasma sources B and hot wire gas plasma sources C can be arranged on the vacuum chamber 1 so as to meet the requirements of process conditions.

By adopting the structure device, the high-energy density plasma gun can generate molten multi-component alloy plasma, so that the film material and the substrate material can be well combined. The vacuum arc plasma provides metal ions, and has large arc source current, high ionization rate, high reaction efficiency and high deposition rate. The hot wire plasma provides a gas plasma with a high ionization rate, and can increase the ionization rate of metal ions generated by the vacuum arc source. The rotary planetary sample stage capable of batch processing samples is applied with pulse negative bias to realize plasma source ion implantation and deposition. By controlling the working sequence and time of each plasma source and other corresponding working parameters, the plasma source has the capability of simultaneously generating metal ions and gas ions, so that a large-area modified layer which has ideal chemical proportion, certain thickness, high film-substrate bonding strength, uniformity and fine particles can be obtained, and workpieces including workpieces with complex shapes which are difficult to process and the surfaces of non-metallic materials such as ceramics and the like are rapidly and efficiently strengthened.

Claims

1. A pulsed high energy density plasma assisted multi-source composite surface modification device is characterized by comprising: the plasma source comprises a vacuum chamber, a pulse high-energy density plasma gun, a high-power high-speed vacuum cathode arc metal plasma source and a hot wire gas plasma source, wherein the pulse high-energy density plasma gun and the high-power vacuum cathode arc metal plasma source are respectively and symmetrically arranged at ports (A, A '), (B and B') of the vacuum chamber, the hot wire gas plasma source is arranged at the port (C) of the vacuum chamber, and a rotary sample table (D) with adjustable rotating speed is further arranged at the bottom of the vacuum chamber.

2. The pulsed high energy density plasma assisted multi-source composite surface modification apparatus of claim 1, wherein the pulsed high energy density plasma gun comprises: the vacuum pump comprises a central electrode, a cylindrical outer electrode, an electromagnetic valve, an air inlet valve and bakelite, wherein the central electrode is coaxial with the cylindrical outer electrode, the root of the central electrode is hollow and is propped by a magnetic needle of the electromagnetic valve, the air inlet valve is arranged at the tail end of the electromagnetic valve and is directly connected with a working gas cylinder, and the bakelite supports the central electrode and the cylindrical outer electrode and is fixed with a vacuum chamber.

3. The device of claim 1, wherein the high power vacuum cathode arc plasma source comprises: a cathode, a trigger electrode and a magnetic field coil, the cathode and trigger electrode disposed within the (B) port, the magnetic field coil disposed around the (B) port.

4. The pulsed high energy density plasma assisted multi-source composite surface modification apparatus of claim 1, wherein the hot filament ion source comprises: the tungsten wire is arranged in the port (C) through the wiring terminal, and the magnetic field coil is arranged around the support (C4).

5. The device as claimed in claim 2 or 3, wherein the electrode material is titanium, tantalum, copper or graphite.

6. The device of claim 1, wherein the sample holders are circumferentially and uniformly distributed on the sample stage through a planetary gear set, the stepping motor is mounted on an insulating shaft sleeve of the sample stage through a transmission shaft, and an external circuit provides controllable direct current or pulse negative bias voltage for the sample stage and the substrate holder.

7. The device for modifying the surface of a multi-source composite material assisted by pulsed high-energy density plasma according to claim 6, wherein the pulsed high-energy density plasma gun, the high-power vacuum cathode arc plasma source and the hot filament ion source are respectively provided with at least one.

8. The pulsed high energy density plasma gun of claim 7, wherein the pulsed high energy density plasma gun is in a horizontal position closest to the sample holder, and the species and positions of the high power vacuum cathode arc plasma source and the hot filament ion source are arbitrarily combined according to the principle of maintaining symmetry of multiple plasma sources.