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CN201126821Y - led - Google Patents

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Publication number
CN201126821Y
CN201126821Y CNU2007203106906U CN200720310690U CN201126821Y CN 201126821 Y CN201126821 Y CN 201126821Y CN U2007203106906 U CNU2007203106906 U CN U2007203106906U CN 200720310690 U CN200720310690 U CN 200720310690U CN 201126821 Y CN201126821 Y CN 201126821Y
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emitting diode
diode chip
light
light emitting
blue light
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CNU2007203106906U
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Chinese (zh)
Inventor
谢建晖
郑绍昌
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Pro Light Technology Ltd
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Pro Light Technology Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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Abstract

The utility model discloses a light-emitting diode, which comprises a base and a blue light-emitting diode chip fixed on the base, wherein a yellow fluorescent layer is covered on the blue light-emitting diode chip; and the base is also fixedly provided with a red light-emitting diode chip, and the red light-emitting diode chip and the blue light-emitting diode chip are covered in the yellow fluorescent layer together. Preferably, the wavelength of the red light emitting diode chip is 610-640 nm. The utility model discloses a light emitting diode is on the warm white light packaging structure basis of blue light emitting diode chip cooperation yellow phosphor powder, has increased the wavelength and has carried out colour mixture and mixing of colors for 610 to 640 nm's ruddiness emitting diode chip to play the regulation colour temperature effect, realize that the colour temperature from 1500K to 2700K's smooth linear transition and improve the color rendering, can true original object intrinsic colour itself.

Description

发光二极管 led

技术领域technical field

本实用新型涉及一种发光二极管。The utility model relates to a light emitting diode.

背景技术Background technique

半导体照明是新型高效固体光源,具有节能、环保和寿命长等显著优点。世界照明工业的转型和新兴半导体照明产业的崛起,巳成为不争的事实。半导体照明以其技术的先进性和产品应用的广泛性,被公认为是21世纪最具发展前景的高技术领域之一。Semiconductor lighting is a new type of high-efficiency solid light source, which has significant advantages such as energy saving, environmental protection and long life. The transformation of the world's lighting industry and the rise of the emerging semiconductor lighting industry have become an indisputable fact. With its advanced technology and wide range of product applications, semiconductor lighting is recognized as one of the most promising high-tech fields in the 21st century.

发光二极管作为一种半导体固体发光器件,它是利用固体半导体芯片作为发光材料,其发光机理是由二极管特殊的组成结构决定的:二极管主要由PN结芯片、电极和光学系统组成,当在电极上加上正向偏压之后,使电子和空穴分别注入P区和N区,当非平衡少数载流子和多数载流子复合时,就会以辐射光子的形式将多余的能量转化为光能。其发光过程包括三个部分:正向偏压下的载流子注入、复合辐射和光能传输。由此可见二极管主要是靠载流子的不断移动而发光的,发光二极管光源无灯丝、工作电压低1.5-3.5V,使用寿命可达5万到10万小时,利环保,生产中无有害元素、使用中不发出有害物质、无辐射。As a semiconductor solid light-emitting device, a light-emitting diode uses a solid semiconductor chip as a light-emitting material. Its light-emitting mechanism is determined by the special composition of the diode: the diode is mainly composed of a PN junction chip, electrodes and optical systems. After the forward bias is added, the electrons and holes are injected into the P region and the N region respectively. When the unbalanced minority carriers and majority carriers recombine, the excess energy will be converted into light in the form of radiated photons. able. Its luminescent process includes three parts: carrier injection under forward bias voltage, recombination radiation and light energy transmission. It can be seen that the diode mainly relies on the continuous movement of carriers to emit light. The LED light source has no filament, the working voltage is 1.5-3.5V lower, and the service life can reach 50,000 to 100,000 hours. It is environmentally friendly and has no harmful elements in production. , No harmful substances are emitted during use, and there is no radiation.

下面简单介绍一下光源的颜色,它包括两方面的意思:色表和显色性。人眼直接观察光源时看到的颜色,称为光源的色表,色坐标、色温等就是描述色表的量;而显色性是指光源的光照射到物体上所产生的客观效果:如果各色物体受照后的颜色效果和标准光源照射时一样,则认为该光源的显色性好;反之,如果物体在受照后的颜色失真,该光源的显色性就差。The following is a brief introduction to the color of the light source, which includes two meanings: color appearance and color rendering. The color seen when the human eye directly observes the light source is called the color table of the light source. Color coordinates, color temperature, etc. are the quantities that describe the color table; and color rendering refers to the objective effect produced by the light of the light source on the object: If the color effect of objects of various colors is the same as that of the standard light source, it is considered that the color rendering of the light source is good; on the contrary, if the color of the object is distorted after being irradiated, the color rendering of the light source is poor.

常见之白光发光二极管主要包括下列两种类型:Common white light emitting diodes mainly include the following two types:

1、同时使用红光、蓝光及绿光发光二极管芯片,蓝光发光二极管单元、红光发光二极管单元及绿光发光二极管单元经驱动后可以分别发出蓝光、红光及绿光,以混合成白光。由于不同方向光色不一,因此不易混出均匀白光,其显色性低。1. Using red, blue and green LED chips at the same time, the blue light emitting diode unit, red light emitting diode unit and green light emitting diode unit can respectively emit blue light, red light and green light after being driven to mix into white light. Due to the different light colors in different directions, it is not easy to mix uniform white light, and its color rendering is low.

2、以蓝光发光二极管芯片搭配黄色荧光粉,以产生白光。其中,黄色无机荧光粉受到蓝光发光二极管芯片所发出之蓝光照射之后,可发出黄色之荧光,黄色光再与没有被吸收的蓝光一起混光成为二波长白光。但采用这种结构的发光二极管的显色性较低,色彩还原性较差;特别是当其被应用在普通照明领域时,其显色性无法达到普通照明的要求。2. Use blue light-emitting diode chips with yellow phosphor to generate white light. Among them, the yellow inorganic fluorescent powder can emit yellow fluorescence after being irradiated by the blue light emitted by the blue light-emitting diode chip, and the yellow light is mixed with the unabsorbed blue light to form two-wavelength white light. However, the light-emitting diode with this structure has low color rendering and poor color reproduction; especially when it is applied in the field of general lighting, its color rendering cannot meet the requirements of general lighting.

发明内容Contents of the invention

本实用新型的目的在于提供一种可调节色温和提高显色性的发光二极管。The purpose of the utility model is to provide a light-emitting diode with adjustable color temperature and improved color rendering.

为实现上述目的,本实用新型提供了一种发光二极管,包括基座,固定在所述基座上的蓝光发光二极管芯片,所述蓝光发光二极管芯片上覆盖有黄色荧光层;其中,所述基座上还固定有红光发光二极管芯片,所述红光发光二极管芯片和所述蓝光发光二极管芯片一同被覆盖于所述黄色荧光层内。In order to achieve the above object, the utility model provides a light emitting diode, comprising a base, a blue light emitting diode chip fixed on the base, and the blue light emitting diode chip is covered with a yellow fluorescent layer; wherein, the base A red light emitting diode chip is also fixed on the seat, and the red light emitting diode chip and the blue light emitting diode chip are covered in the yellow fluorescent layer together.

优选地,所述红光发光二极管芯片的波长为610~640nm。Preferably, the wavelength of the red light emitting diode chip is 610-640nm.

所述蓝光发光二极管芯片与红光发光二极管芯片之间串联或并联。The blue light emitting diode chip and the red light emitting diode chip are connected in series or in parallel.

所述红光发光二极管芯片可以有多个,各红光发光二极管芯片之间串联或并联。There may be multiple red light emitting diode chips, and the red light emitting diode chips are connected in series or in parallel.

本实用新型的发光二极管是在蓝光发光二极管芯片配合黄色荧光粉的暖白光封装结构基础上,增加了波长为610至640nm的红光发光二极管芯片进行混色及调色,从而起到调节色温效果,实现色温从1500K到2700K的平滑线性过度以及提高显色性,能真实还原物体本身固有的颜色。黄色荧光层中的黄色荧光粉受到蓝光发光二极管芯片所发出之蓝光照射之后,可发出黄色之荧光,黄色光再与没有被吸收的蓝光一起混光成为暖白光,暖白光与红光发光二极管芯片所发出之红光混色后即成为高显色性的暖白光,且兼具良好的色彩还原性。即使在低色温的情况下,其显色指数也能在Ra80以上。The light-emitting diode of the utility model is based on the warm white light packaging structure of the blue light-emitting diode chip and the yellow fluorescent powder, and adds a red light-emitting diode chip with a wavelength of 610 to 640nm for color mixing and color adjustment, thereby achieving the effect of adjusting the color temperature. Realize the smooth linear transition of color temperature from 1500K to 2700K and improve the color rendering performance, which can truly restore the inherent color of the object itself. The yellow fluorescent powder in the yellow fluorescent layer can emit yellow fluorescence after being irradiated by the blue light emitted by the blue light-emitting diode chip, and the yellow light is mixed with the unabsorbed blue light to become warm white light. The red light emitted becomes warm white light with high color rendering after color mixing, and also has good color reproduction. Even in the case of low color temperature, its color rendering index can be above Ra80.

附图说明Description of drawings

图1为本实用新型发光二极管应用于灯泡型封装结构的实施例示意图;Fig. 1 is a schematic diagram of an embodiment of a light-emitting diode of the present invention applied to a bulb-type packaging structure;

图2为本实用新型发光二极管应用于表面黏着型封装结构的实施例示意图。FIG. 2 is a schematic diagram of an embodiment of the application of the light-emitting diode of the present invention in a surface-mounted packaging structure.

以下结合附图对本实用新型的较佳实施例作进一步详细的描述。The preferred embodiments of the present utility model will be further described in detail below in conjunction with the accompanying drawings.

具体实施方式Detailed ways

图1所示为本实用新型发光二极管应用于灯泡型封装结构的实施例。请参阅图1,本实施例是在一导线支架1的端部成形的晶杯2中设置一蓝光发光二极管芯片3以及一波长为610至640nm的红光发光二极管芯片4,且该两发光二极管芯片3、4分别由焊线5、6接至另一导线支架7,使两发光二极管芯片3、4分别与导线支架7产生电性连接。所述蓝光发光二极管芯片3与红光发光二极管芯片4之间形成串联或并联。接着,将由黄色发光材料等构成的黄色荧光粉填注于该晶杯2中,形成覆盖于该两发光二极管芯片3、4上的黄色荧光层8。接着,以透光的封装胶体9进行封装而成为一灯泡型发光二极管。黄色荧光层8中的黄色荧光粉受到蓝光发光二极管芯片所发出之蓝光照射之后,可发出黄色之荧光,黄色光再与没有被吸收的蓝光一起混光成为暖白光,暖白光与红光发光二极管芯片所发出之红光混色后即成为高显色性的暖白光。FIG. 1 shows an embodiment of the light emitting diode of the present invention applied to a bulb-type packaging structure. Please refer to Fig. 1, the present embodiment is that a blue light emitting diode chip 3 and a red light emitting diode chip 4 with a wavelength of 610 to 640nm are set in a crystal cup 2 formed at the end of a wire support 1, and the two light emitting diodes The chips 3 and 4 are respectively connected to another wire support 7 by bonding wires 5 and 6, so that the two LED chips 3 and 4 are electrically connected to the wire support 7 respectively. The blue light emitting diode chip 3 and the red light emitting diode chip 4 are connected in series or in parallel. Next, yellow fluorescent powder made of yellow luminescent material is filled into the crystal cup 2 to form a yellow fluorescent layer 8 covering the two LED chips 3 and 4 . Next, it is encapsulated with a light-transmitting encapsulant 9 to form a bulb-type light emitting diode. The yellow fluorescent powder in the yellow fluorescent layer 8 can emit yellow fluorescence after being irradiated by the blue light emitted by the blue light-emitting diode chip, and the yellow light is mixed with the unabsorbed blue light to become warm white light, and the warm white light and the red light-emitting diode The red light emitted by the chip becomes warm white light with high color rendering after color mixing.

图2所示为本实用新型发光二极管应用于表面黏着型封装结构的实施例。请参阅图2,本实施例是在一设有印刷电路层10的基板11上设置一蓝光发光二极管芯片12以及一波长为610至640nm的红光发光二极管芯片13,且该两发光二极管芯片12、13分别由两组焊线14、15接至印刷电路层10,使两发光二极管芯片12、13分别与印刷电路层10产生电性连接。所述蓝光发光二极管芯片3与红光发光二极管芯片4之间形成串联或并联。接着,于该两发光二极管芯片12、13上涂覆由黄色发光材料等构成的黄色荧光粉,形成覆盖于该两发光二极管芯片12、13上的黄色荧光层16。接着,在此结构上以透光的封装胶体17进行封装,而成为一表面黏着型发光二极管。黄色荧光层16中的黄色荧光粉受到蓝光发光二极管芯片所发出之蓝光照射之后,可发出黄色之荧光,黄色光再与没有被吸收的蓝光一起混光成为暖白光,暖白光与红光发光二极管芯片所发出之红光混色后即成为高显色性的暖白光。FIG. 2 shows an embodiment of the light-emitting diode of the present invention applied to a surface-mounted packaging structure. Please refer to FIG. 2 , in this embodiment, a blue light emitting diode chip 12 and a red light emitting diode chip 13 with a wavelength of 610 to 640nm are arranged on a substrate 11 provided with a printed circuit layer 10, and the two light emitting diode chips 12 , 13 are respectively connected to the printed circuit layer 10 by two sets of bonding wires 14, 15, so that the two LED chips 12, 13 are electrically connected to the printed circuit layer 10 respectively. The blue light emitting diode chip 3 and the red light emitting diode chip 4 are connected in series or in parallel. Next, a yellow fluorescent powder composed of a yellow luminescent material is coated on the two LED chips 12 and 13 to form a yellow fluorescent layer 16 covering the two LED chips 12 and 13 . Then, the structure is encapsulated with a light-transmitting encapsulant 17 to become a surface-mounted light-emitting diode. The yellow fluorescent powder in the yellow fluorescent layer 16 can emit yellow fluorescence after being irradiated by the blue light emitted by the blue light-emitting diode chip, and the yellow light is mixed with the unabsorbed blue light to become warm white light. The red light emitted by the chip becomes warm white light with high color rendering after color mixing.

本实用新型的发光二极管是在蓝光发光二极管芯片配合黄色荧光粉的暖白光封装结构基础上,增加波长为610至640nm的红光发光二极管芯片进行混色及调色,从而起到调节色温、提高显色性的效果。The light-emitting diode of the utility model is based on the warm white light packaging structure of the blue light-emitting diode chip and the yellow fluorescent powder, and adds a red light-emitting diode chip with a wavelength of 610 to 640nm for color mixing and color adjustment, thereby adjusting the color temperature and improving the display quality. color effect.

以上所述的仅是本实用新型的优选实施例。应当指出,对于本领域的普通技术人员来说,在不脱离本实用新型发明构思的前提下,还可以做出若干变形和改进,这些变更和改变应视为属于本实用新型的保护范围。例如,所述红光发光二极管芯片可以设置多个,各红光发光二极管芯片之间形成串联或并联关系。The above are only preferred embodiments of the present utility model. It should be pointed out that those skilled in the art can make some modifications and improvements without departing from the inventive concept of the present utility model, and these changes and changes should be regarded as belonging to the protection scope of the present utility model. For example, there may be multiple red light emitting diode chips, and the red light emitting diode chips are connected in series or in parallel.

Claims (4)

1、发光二极管,包括1. Light-emitting diodes, including 基座;base; 固定在所述基座上的蓝光发光二极管芯片;a blue light emitting diode chip fixed on the base; 所述蓝光发光二极管芯片上覆盖有黄色荧光层;The blue light-emitting diode chip is covered with a yellow fluorescent layer; 其特征在于:It is characterized by: 所述基座上还固定有红光发光二极管芯片;A red light emitting diode chip is also fixed on the base; 所述红光发光二极管芯片和所述蓝光发光二极管芯片一同被覆盖于所述黄色荧光层内。The red light emitting diode chip and the blue light emitting diode chip are covered in the yellow fluorescent layer together. 2、根据权利要求1所述发光二极管,其特征在于:2. The LED according to claim 1, characterized in that: 所述红光发光二极管芯片的波长为610~640nm。The wavelength of the red light emitting diode chip is 610-640nm. 3、根据权利要求1或2所述发光二极管,其特征在于:3. The LED according to claim 1 or 2, characterized in that: 所述蓝光发光二极管芯片与红光发光二极管芯片之间串联或并联。The blue light emitting diode chip and the red light emitting diode chip are connected in series or in parallel. 4、根据权利要求1或2所述发光二极管,其特征在于:4. The LED according to claim 1 or 2, characterized in that: 所述红光发光二极管芯片有多个,各红光发光二极管芯片之间串联或并联。There are multiple red light emitting diode chips, and the red light emitting diode chips are connected in series or in parallel.
CNU2007203106906U 2007-12-13 2007-12-13 led Expired - Lifetime CN201126821Y (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011064363A1 (en) * 2009-11-30 2011-06-03 Tridonic Jennersdorf Gmbh Retrofit led lamp with warm-white, more particularly flame-like white light
WO2016141576A1 (en) * 2015-03-09 2016-09-15 王纪年 Super power-saving led illumination lamp emitting light based on micro-current

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011064363A1 (en) * 2009-11-30 2011-06-03 Tridonic Jennersdorf Gmbh Retrofit led lamp with warm-white, more particularly flame-like white light
CN102656688A (en) * 2009-11-30 2012-09-05 特里多尼克詹纳斯多尔夫有限公司 Retrofit LED lamp with warm-white, more particularly flame-like white light
US20120242245A1 (en) * 2009-11-30 2012-09-27 Tridonic Jennersdorf Gmbh Retrofit LED Lamp with Warm-White, More Particularly Flame-Like White Light
TWI452226B (en) * 2009-11-30 2014-09-11 Tridonic Jennersdorf Gmbh Modified LED lamp with warm white light, especially flame-like white light
CN102656688B (en) * 2009-11-30 2015-11-25 特里多尼克詹纳斯多尔夫有限公司 Replacement LED lamps with warm white, especially flame white light
US9520382B2 (en) * 2009-11-30 2016-12-13 Tridonic Jennersdorf Gmbh Retrofit LED lamp with warm-white, more particularly flame-like white light
WO2016141576A1 (en) * 2015-03-09 2016-09-15 王纪年 Super power-saving led illumination lamp emitting light based on micro-current

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