CN1921141A - Pixel unit structure of self-luminous unit display with low reflectivity - Google Patents
Pixel unit structure of self-luminous unit display with low reflectivity Download PDFInfo
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- CN1921141A CN1921141A CN 200610151537 CN200610151537A CN1921141A CN 1921141 A CN1921141 A CN 1921141A CN 200610151537 CN200610151537 CN 200610151537 CN 200610151537 A CN200610151537 A CN 200610151537A CN 1921141 A CN1921141 A CN 1921141A
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- 239000010410 layer Substances 0.000 claims description 139
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 230000008033 biological extinction Effects 0.000 claims description 33
- 239000011229 interlayer Substances 0.000 claims description 13
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
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Abstract
The invention provides a pixel structure of a self-luminous unit display, which mainly comprises a first substrate, a dark light absorption structure, a filter layer, a driving circuit unit and a self-luminous unit. The dark color light absorption structure and the filter layer are formed on the first substrate and adjacent to each other. The driving circuit unit is located above the dark light absorption structure and is shielded by the dark light absorption structure. The self-luminous unit is positioned on the filter layer and mainly comprises a light-transmitting electrode layer, a luminous layer and a black electrode layer. The light-transmitting electrode layer is positioned above the filter layer, and the light-emitting layer and the black electrode layer are sequentially formed on the light-transmitting electrode layer. Through the matching arrangement of the dark light absorption structure, the filter layer and the black electrode layer, the reflected light quantity caused by the incident of external environment light can be effectively reduced, so that the effect of increasing the contrast is achieved.
Description
Technical field
The present invention relates to a kind of pixel cell structure of selfluminous cell display; Particularly, the present invention relates to a kind of pixel cell structure of selfluminous cell display of antiradar reflectivity.
Background technology
Along with the raising of thin display demand, the technological development of selfluminous cell display is becoming more and more important in recent years.Comprise the selfluminous cell display of organic light emitting diode display, its technology maturity also reaches its maturity.With the organic light emitting diode display is example, and the brightness of display floater and contrast are estimated one of total quality often and considered greatly.Therefore at present in this field, how to improve the utilance that selfluminous cell emits beam effectively, become the actively target of research and development of engineers.
With the contrast of display floater, when contrast was high, the color of display floater integral body and image performance were all comparatively desirable.Yet improving on the mode of comparing, except the brightness that improves selfluminous cell, how intercepting the external environment reflection of light also is an important topic.Because external environment light can reflect display surface via electrode in the display floater or transistor unit again in display surface enters display floater, the light of reflection often influences the light performance that display floater sends originally, the phenomenon that causes contrast to descend.Therefore how to reduce the direction that the external environment reflection of light promptly becomes present research and development.
As shown in Figure 1, for reducing the reflectivity of display floater, be on substrate 10 outer surfaces 11 of display floater, to add light polarizing film 30 traditionally.Yet when using the light polarizing film 30 of low penetration rate, though can reduce reflectivity and improve contrast effect, owing to the loss that need remedy in the brightness, thus need to increase the luminosity of selfluminous cell 50, so that reduce the useful life of selfluminous cell 50.If when using the light polarizing film 30 of high penetration, though performance is better on the utilance of light, but the effect of increase contrast is not good.
Summary of the invention
The object of the present invention is to provide a kind of pixel cell structure of selfluminous cell display, have lower external environment light reflectivity.
Another object of the present invention is to provide a kind of pixel cell structure of selfluminous cell display, have contrast expression preferably.
Another object of the present invention is to provide a kind of pixel cell structure of selfluminous cell display, have luminous preferably utilance.
The dot structure of selfluminous cell display mainly comprises first substrate, dark-coloured extinction structure, filter layer, drive circuit unit and selfluminous cell.First substrate is preferably as the substrate of display surface, and can be divided into light-emitting zone and non-luminous region.Dark-coloured extinction structure is formed on first substrate, and is positioned at non-luminous region.By the setting of dark-coloured extinction structure, reduced the external environment light inlet of the first substrate non-luminous region, thereby reduced the reverberation that causes because of circuit or electronic unit reflection external environment light.
Filter layer is arranged on first substrate, and contiguous dark-coloured extinction structure.By the obstruct of filter layer, can reduce the first substrate external environment light amount that enters, to improve the contrast of selfluminous cell display show image.Drive circuit unit is positioned at the top of dark-coloured extinction structure, and is covered by dark-coloured extinction structure.In other words, the external environment light of invading first substrate is difficult for contacting with drive circuit unit, and then reduces the possibility of external environment light by drive circuit unit or the reflection of its contained metal material.
Selfluminous cell is positioned on the filter layer, and in the light-emitting zone of cardinal principle corresponding to first substrate.Selfluminous cell mainly comprises euphotic electrode layer, luminescent layer and black electrode layers.Euphotic electrode layer is positioned at the filter layer top, and is made of the electric conducting material of tool light peneration.Luminescent layer and black electrode layers then are formed on the euphotic electrode layer successively.Because black electrode layers is low than the reflectivity of common metal electrode, therefore when ambient light is incident upon black electrode layers via first substrate and filter layer, the reflection ray that is produced than the common metal electrode for less.When reflection ray reduced, the selfluminous cell formed image contrast that emits beam itself can improve.In addition,, also can effectively reduce the reflection light quantity that causes because of the incident of external environment light, to reach the effect that increases the display contrast by the collocation setting of dark-coloured extinction structure, filter layer and black electrode layers.
Description of drawings
Fig. 1 is the profile of LED display panel in the prior art;
Fig. 2 is the unit exploded view according to the selfluminous cell display of the embodiment of the invention;
Fig. 3 is the profile according to the selfluminous cell display picture element cellular construction of the embodiment of the invention;
Fig. 4 is the schematic diagram of projected position among the selfluminous cell display picture element unit embodiment;
Fig. 5 is another embodiment schematic diagram of black electrode layers;
Fig. 6 is the profile according to the selfluminous cell display of another embodiment of the present invention.
The simple symbol explanation
100 first substrates, 200 second substrates
250 dorsolateral placodeses, 111 light-emitting zones
113 non-luminous regions, 300 dark-coloured extinction structures
500 filter layers, 700 drive circuit units
710 grids, 900 selfluminous cells
910 euphotic electrode layers, 930 luminescent layers
951 times metal electrode layers of 950 black electrode layers
Metal electrode layer on the 953 interlayer electrode layers 955
Embodiment
The invention provides a kind of pixel cell structure of selfluminous cell display.In a preferred embodiment, selfluminous cell display of the present invention is color organic light emitting diode (OLED) display.Yet in different embodiment, selfluminous cell display of the present invention also can comprise monochromatic organic light emitting diode display.In addition, in different embodiment, selfluminous cell display of the present invention also can comprise macromolecule Organic Light Emitting Diode (PLED) display.Selfluminous cell display of the present invention can be applicable to the display screen etc. of flat-plate type monitor, mobile phone and digital camera of flat-surface television, personal computer and the laptop computer of various panel display screen, family expenses.
In preferred embodiment shown in Figure 2, the dot structure of selfluminous cell display mainly comprises first substrate 100, dark-coloured extinction structure 300, filter layer 500, drive circuit unit 700, selfluminous cell 900 and dorsolateral placodes 250.In this embodiment, first substrate 100 is as the substrate of display surface, and promptly light outwards penetrates with show image via first substrate 100.This moment first substrate 100 material preferably by glass or comprise that the transparent materials such as organic material of polymer are made.In addition, in this embodiment, first substrate 100 can be divided into light-emitting zone 111 and non-luminous region 113.
Dark-coloured extinction structure 300 is formed on first substrate 100, and is positioned at non-luminous region 113.In a preferred embodiment, dark-coloured extinction structure 300 covers non-luminous region 113 fully; Yet in different embodiment, dark-coloured extinction structure 300 also can only partly cover non-luminous region 113.By the setting of dark-coloured extinction structure 300, reduced the external environment light inlet of first substrate, 100 non-luminous regions 113, thereby reduced the reverberation that causes because of circuit or electronic unit reflection external environment light.In a preferred embodiment, dark-coloured extinction structure 300 comprises black matrix" (Black Matrix).Its form of the composition comprises the organic membrane of individual layer, the inoranic membrane of individual layer, compound organic membrane, compound inoranic membrane or other compound mode.In a preferred embodiment, black matrix" comprises the crome metal black matrix"; Yet in different embodiment, black matrix" also can comprise the structure of resin black matrix, graphite black matrix" or other tool similarity.
In the embodiment shown in fig. 3, filter layer 500 is arranged on first substrate 100, and contiguous dark-coloured extinction structure.In this preferred embodiment, filter layer 500 is arranged in light-emitting zone 111, and its side is connected with dark-coloured extinction structure 300.Filter layer 500 preferably covers light-emitting zone 111 fully; Yet in different embodiment, filter layer 500 also can only partly cover light-emitting zone 111.In this embodiment, filter layer 500 is preferably colored filter; Yet filter layer 500 also can be the optical filtering photoresistance (Color Filter on Array) that is formed directly on first substrate 100.By the obstruct of filter layer 500, can reduce first substrate, the 100 external environment light amounts that enter, to improve the contrast of selfluminous cell display show image.In addition,, also can effectively reduce the reflection light quantity that causes because of the incident of external environment light, to reach the effect that increases the display contrast by the collocation setting of filter layer 500 with dark-coloured extinction structure 300.
As shown in Figure 3, drive circuit unit 700 is positioned at the top of dark-coloured extinction structure 300.With respect to for the external environment light of first substrate, 100 incidents, dark-coloured extinction structure 300 can be covered drive circuit unit 700.Therefore drive circuit unit 700 is unlikely contacts with external environment light, and then avoids external environment light to reflect outside first substrate 100 by drive circuit unit 700 or its contained metal material.In preferred embodiment shown in Figure 4, dark-coloured extinction structure 300 is covered the upright projection of drive circuit unit 700 on first substrate 100, thereby obtains screening effect preferably.Drive circuit unit 700 preferably include thin-film transistor (Thin-Film-Transistor, TFT).Yet in different embodiment, drive circuit unit 700 also can be other circuit pattern with similar functions, for example MIM-TFD circuit.The mode that forms thin-film transistor preferably includes amorphous silicon technology (amorphous silicon; A-Si), low temperature polycrystalline silicon technology (Low Temperature poly-silicon; LTPS) and other technology of similar effect can be provided.In addition, the drive circuit unit 700 in each pixel cell produces the relation that signals link by its grid that includes 710 and adjacent drive circuit unit 700.
In the embodiment shown in fig. 3, selfluminous cell 900 is positioned on the filter layer 500, and in the light-emitting zone 111 of cardinal principle corresponding to first substrate 100.In other words, the light source that selfluminous cell 900 is sent is able to penetrate to first substrate 100 via light-emitting zone 111.In a preferred embodiment, as shown in Figure 4, the upright projection of selfluminous cell 900 on first substrate 100 falls within the light-emitting zone 111 of inner surface 110.Selfluminous cell 900 mainly comprises euphotic electrode layer 910, luminescent layer 930 and black electrode layers 950.Euphotic electrode layer 910 is positioned at filter layer 500 tops, and preferred as the anode electrode in the selfluminous cell 900.In the embodiment shown in fig. 3, euphotic electrode layer 910 is formed directly on the filter layer 500, and is electrically connected with drive circuit unit 700.Euphotic electrode layer 910 preferably includes indium tin oxide (Indium Tin Oxide, ITO) formed conductive layer; Yet in different embodiment, euphotic electrode layer 910 also can be the electric conducting material of other printing opacity.
As shown in Figure 3, luminescent layer 930 is formed on the euphotic electrode layer 910.The generation type of luminescent layer 930 comprises technologies such as coating, physical property or chemical deposition, gold-tinted, etching.Luminescent layer 930 preferably includes Organic Light Emitting Diode (OLED); Yet in different embodiment, luminescent layer 930 also can comprise macromolecule Organic Light Emitting Diode (PLED) or other self-luminosity material.In addition, in this embodiment, luminescent layer 930 preferably includes white light emitting material, forms the coloured light that has of different colours by arranging in pairs or groups with suitable filter layer; Yet in different embodiment, luminescent layer 930 also can send outer other of white light coloured light.
Figure 5 shows that another embodiment of black electrode layers 950.In this embodiment, black electrode layers 950 also comprises metal electrode layer 951, interlayer electrode layer 953 and last metal electrode layer 955 down.Following metal electrode layer 951 preferably is formed directly on the luminescent layer 930.The thinner thickness of following metal electrode layer 951, approximately between 1～25nm, so light is penetrable.Following metal electrode layer 951 preferably is made of aluminum metal or aluminium alloy; Yet in different embodiment, following metal electrode layer 951 also can comprise the metal and the alloy of copper or other tool conductivity.Interlayer electrode layer 953 has light peneration, and is formed directly into down on the metal electrode layer 951.In a preferred embodiment, the material of interlayer electrode layer 953 comprises indium tin oxide (ITO); Yet in different embodiment, interlayer electrode layer 953 also can be made of the electric conducting material of other tool light transmission.Last metal electrode layer 955 preferably is formed directly on the interlayer electrode layer 953; Its material preferably is made of aluminum metal or aluminium alloy.In addition, last metal electrode layer 955 preferred employings with following metal electrode layer 951 identical materials form; Yet in different embodiment, last metal electrode layer 955 also can comprise the metal and the alloy of copper or other tool conductivity, and unnecessary and following metal electrode layer 951 adopts identical materials.
In this embodiment, following metal electrode layer 951, interlayer electrode layer 953 and the last metal electrode layer 955 common optical cavity that form.Because therefore metal electrode layer 951 can be injected the penetrable metal electrode layer 951 down of light of first substrate 100 and enter above-mentioned optical cavity by light penetration down.The optical effect of optical cavity inside makes the light of injecting in the optical cavity to penetrate via following metal electrode layer 951 easily, and then reaches the effect that reduces reflection.
In Fig. 3 and embodiment shown in Figure 5, the light that selfluminous cell 900 sends is via euphotic electrode layer 910 formed anodes, and the space of passing between the drive circuit unit 700 is outwards penetrated.Yet in another embodiment shown in Figure 6, the light that selfluminous cell 900 sends outwards penetrates via euphotic electrode layer 910 formed negative electrodes, and does not pass the space between the drive circuit unit 700.As shown in Figure 6, the dot structure of selfluminous cell display also comprises second substrate 200 that is provided with respect to first substrate 100; In other words, with respect to for first substrate 100 of display surface, second substrate 200 preferably is made for backboard and uses.The material of second substrate 200 can comprise metal, high strength polymeric or other non-light transmittance material.
As shown in Figure 6, drive circuit unit 700 and selfluminous cell 900 are formed on second substrate 200 successively.Dark-coloured extinction structure 300 is formed directly on first substrate 100 with 500 of filter layers.When first substrate 100 and 200 combinations of second substrate, dark-coloured extinction structure 300 correspondences are also covered drive circuit unit 700, the then corresponding filter layer 500 of selfluminous cell 900.This moment, black electrode layers 950 was provided as anode, and was electrically connected with drive circuit unit 700.By the collocation setting of dark-coloured extinction structure 300, filter layer 500 and black electrode layers 955, can effectively reduce the reflection light quantity that causes because of the incident of external environment light, to reach the effect that increases the display contrast.
The present invention is described by above-mentioned related embodiment, yet the foregoing description is only for implementing example of the present invention.Must be pointed out that the embodiment that has disclosed does not limit the scope of the invention.On the contrary, modification and the equivalent feature that is included in the spirit and scope of claim includes within the scope of the invention.
Claims (18)
1, a kind of pixel cell structure of selfluminous cell display comprises:
First substrate;
Dark-coloured extinction structure is formed on this first substrate;
Filter layer is arranged on this first substrate, and contiguous this dead color extinction structure;
Drive circuit unit is positioned at the top of this dead color extinction structure, and this dead color extinction structure is covered the upright projection of this thin-film transistor on this first substrate; With
Selfluminous cell comprises:
Euphotic electrode layer is positioned at this filter layer top, wherein this euphotic electrode layer tool light peneration;
Luminescent layer is formed on this euphotic electrode layer; With
Black electrode layers is formed on this luminescent layer, and wherein this black electrode layers has light absorption.
2, pixel cell structure as claimed in claim 1 wherein should dead color extinction structure comprise black matrix".
3, pixel cell structure as claimed in claim 1, wherein this filter layer comprises colored filter.
4, pixel cell structure as claimed in claim 1, wherein this euphotic electrode layer comprises indium tin oxide.
5, pixel cell structure as claimed in claim 1, wherein this black electrode layers comprises titanium electrode or chromium metal electrode.
6, pixel cell structure as claimed in claim 1, wherein this black electrode layers comprises:
Following metal electrode layer;
The interlayer electrode layer is formed on this time metal electrode layer, and wherein this interlayer electrode layer has light peneration; With
Last metal electrode layer is formed on this interlayer electrode layer.
7, pixel cell structure as claimed in claim 1, wherein this euphotic electrode layer is electrically connected with this drive circuit unit.
8, the pixel cell structure shown in claim 1, wherein this luminescent layer comprises white luminescent material.
9, pixel cell structure as claimed in claim 1 also comprises another drive circuit unit, is electrically connected on the grid of above-mentioned drive circuit unit.
10, a kind of pixel cell structure of organic light emitting diode display comprises:
First substrate;
Dark-coloured extinction structure is formed on this first substrate;
Filter layer is arranged on this first substrate, and contiguous this dead color extinction structure;
Second substrate is with respect to this first substrate setting;
Thin-film transistor is formed on this second substrate, and this dead color extinction structure is covered the upright projection of this thin-film transistor on this first substrate; With
Organic Light Emitting Diode is provided with respect to this filter layer, comprising:
Black electrode layers is formed on this second substrate, and wherein this black electrode layers has light absorption;
Luminescent layer is formed on this black electrode layers; With
Euphotic electrode layer is formed on this luminescent layer, wherein this euphotic electrode layer tool light peneration.
11, pixel cell structure as claimed in claim 10 wherein should dead color extinction structure comprise black matrix".
12, pixel cell structure as claimed in claim 10, wherein this filter layer comprises colored filter.
13, pixel cell structure as claimed in claim 10, wherein this euphotic electrode layer comprises indium tin oxide.
14, pixel cell structure as claimed in claim 10, wherein this black electrode layers comprises titanium electrode or chromium metal electrode.
15, pixel cell structure as claimed in claim 10, wherein this black electrode layers comprises:
Following metal electrode layer;
The interlayer electrode layer is formed on this time metal electrode layer, and wherein this interlayer electrode layer has light peneration; With
Last metal electrode layer is formed on this interlayer electrode layer.
16, the pixel cell structure shown in claim 10, wherein this luminescent layer comprises white luminescent material.
17, pixel cell structure as claimed in claim 10, wherein this black electrode layers is electrically connected with this thin-film transistor.
18, pixel cell structure as claimed in claim 10 also comprises another thin-film transistor, is electrically connected on the grid of above-mentioned thin-film transistor.
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| CNB2006101515373A CN100426519C (en) | 2006-09-11 | 2006-09-11 | Pixel unit structure of self-luminous unit display with low reflectivity |
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| CNB2006101515373A CN100426519C (en) | 2006-09-11 | 2006-09-11 | Pixel unit structure of self-luminous unit display with low reflectivity |
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Cited By (8)
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| TW439003B (en) * | 1995-11-17 | 2001-06-07 | Semiconductor Energy Lab | Display device |
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