CN1917230A - Low reflectivity self-luminous element display - Google Patents
Low reflectivity self-luminous element display Download PDFInfo
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- CN1917230A CN1917230A CN 200610151612 CN200610151612A CN1917230A CN 1917230 A CN1917230 A CN 1917230A CN 200610151612 CN200610151612 CN 200610151612 CN 200610151612 A CN200610151612 A CN 200610151612A CN 1917230 A CN1917230 A CN 1917230A
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- 230000003287 optical effect Effects 0.000 claims description 31
- 238000004020 luminiscence type Methods 0.000 claims description 28
- 230000008033 biological extinction Effects 0.000 claims description 27
- 230000005540 biological transmission Effects 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 5
- 230000007935 neutral effect Effects 0.000 claims description 4
- 229920002521 macromolecule Polymers 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000031700 light absorption Effects 0.000 abstract 3
- 238000002834 transmittance Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
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- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- HEQBUZNAOJCRSL-UHFFFAOYSA-N iron(ii) chromite Chemical compound [O-2].[O-2].[O-2].[Cr+3].[Fe+3] HEQBUZNAOJCRSL-UHFFFAOYSA-N 0.000 description 1
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Abstract
A self-luminous element display mainly comprises a display substrate, a dark light absorption structure, a driving circuit element, a self-luminous element device and a light modulation layer. The dark light absorbing structure, the driving circuit element, and the self-light emitting element device are formed on the inner surface side of the display substrate, and the light modulation layer is preferably formed on the outer surface side of the display substrate. The dark color light absorption structure is formed on the inner surface of the display substrate and is substantially positioned in the non-luminous area. The driving circuit element is positioned above the dark light absorption structure. The self-luminous element device is generally positioned in the luminous area. The light modulation layer is disposed on an outer surface of the display substrate. The light modulation layer has a light transmittance of greater than about 42%.
Description
Technical field
The present invention relates to a kind of self-emission device display; Particularly, the present invention relates to a kind of self-emission device display of antiradar reflectivity.
Background technology
Along with the raising of thin display demand, the technological development of self-emission device display is becoming more and more important in recent years.Comprise the self-emission device display of organic light emitting diode display, its technology maturity also reaches its maturity.With the organic light emitting diode display is example, and the brightness of display floater and contrast are estimated one of overall quality often and considered greatly.Therefore at present in this field, how to improve the utilance that self-emission device emits beam effectively, become the actively target of research and development of engineers.
With the contrast of display floater, when contrast was high, the color of display floater integral body and image performance were all comparatively desirable.Yet on the mode that improves contrast, except the brightness that improves self-emission device, how intercepting the external environment reflection of light also is important topic.Because external environment light can reflect display surface via electrode in the display floater or transistor unit again in display surface enters display floater, the light of reflection often influences the light performance that display floater sends originally, the phenomenon that causes contrast to descend.Therefore how to reduce the direction that the external environment reflection of light promptly becomes present research and development.
As shown in Figure 1, for reducing the reflectivity of display floater, substrate 10 outer surfaces 11 at display floater add light polarizing film 30 traditionally.
Summary of the invention
The object of the present invention is to provide a kind of self-emission device display, have lower external environment light reflectivity.
Another object of the present invention is to provide a kind of self-emission device display, have preferable contrast performance.
Another object of the present invention is to provide a kind of self-emission device display, have preferable luminous utilance.
The self-emission device display mainly comprises display base plate, dark-coloured extinction structure, components of drive circuit, device of self-luminescence component and optical modulation layer.Dark-coloured extinction structure, components of drive circuit and device of self-luminescence component all are formed on the inner surface side of display base plate, and optical modulation layer preferably then is formed on the outer surface of display base plate side.
Dark-coloured extinction structure is formed on the display base plate inner surface, and is positioned at non-luminous region.Components of drive circuit is positioned at the top of dark-coloured extinction structure.Device of self-luminescence component is positioned at the inner surface side of display base plate, and is positioned at light-emitting zone substantially.Optical modulation layer is arranged on the outer surface of display base plate.The light transmission of optical modulation layer is approximately greater than 42%, and preferably approximately between 42% and 80%.
By the setting of dark-coloured extinction structure, reduced the external environment light inlet of display base plate non-luminous region, thereby reduced the reverberation that causes because of components of drive circuit reflection external environment light.The setting of optical modulation layer then can reduce the display base plate external environment light amount that enters, with improve self-emission device emit beam constituted the contrast of image.In addition,, can effectively reduce the reflection light quantity that causes because of the incident of external environment light, to reach the effect that increases the display contrast by the collocation setting of optical modulation layer and dark-coloured extinction structure.
Description of drawings
Fig. 1 is the profile of LED display panel in the prior art;
Fig. 2 is the embodiment element exploded view of self-emission device display of the present invention;
Fig. 3 is the embodiment profile of self-emission device display;
Fig. 4 is the schematic diagram of projected position among the self-emission device display embodiment;
Fig. 5 is for using the embodiment schematic diagram of ruddiness, green glow and blue light-emitting diode;
Fig. 6 is for using the embodiment schematic diagram of white light emitting diode collocation colored filter;
Fig. 7 is 57% the light polarizing film reflectance test figure during as optical modulation layer for using light transmission;
Fig. 8 is another embodiment profile of self-emission device display of the present invention.
The simple symbol explanation
10 substrates
11 outer surfaces
30 light polarizing film
50 self-emission devices
100 display base plates
110 inner surfaces
111 light-emitting zones
113 non-luminous regions
130 outer surfaces
200 colored filters
300 dark-coloured extinction structures
500 components of drive circuit
700 device of self-luminescence component
710 electrode layers
730 electrode layers
800 dorsolateral placodeses
900 optical modulation layers
Embodiment
The invention provides a kind of self-emission device display.In a preferred embodiment, self-emission device display of the present invention is color organic light emitting diode (OLED) display.Yet in different embodiment, self-emission device display of the present invention also can comprise monochromatic organic light emitting diode display.In addition, in different embodiment, self-emission device display of the present invention also can comprise macromolecule Organic Light Emitting Diode (PLED) display.Self-emission device display of the present invention can be applicable to the display screen etc. of flat-plate type monitor, mobile phone and digital camera of flat-surface television, personal computer and the laptop computer of various panel display screen, family expenses.
In preferred embodiment shown in Figure 2, the self-emission device display mainly comprises display base plate 100, dark-coloured extinction structure 300, components of drive circuit 500, device of self-luminescence component 700 and optical modulation layer 900.Display base plate 100 has inner surface 110 and outer surface 130.Dark-coloured extinction structure 300, components of drive circuit 500 and device of self-luminescence component 700 all are formed on inner surface 110 sides of display base plate 100, and optical modulation layer 900 preferably then is formed on outer surface 130 sides of display base plate 100.Display base plate 100 is preferred by glass, quartz, acryl or comprise that the transparent materials such as organic material of polymer are made.In addition, as shown in Figure 2, the inner surface 110 of display base plate 100 has light-emitting zone 111 and non-luminous region 113.
Dark-coloured extinction structure 300 is formed on display base plate 100 inner surfaces 110, and is positioned at non-luminous region 113.In a preferred embodiment, dark-coloured extinction structure 300 can cover non-luminous region 113 fully; Yet in different embodiment, dark-coloured extinction structure 300 also can only partly cover non-luminous region 113.By the setting of dark-coloured extinction structure 300, reduced the external environment light inlet of display base plate 100 non-luminous regions 113, thereby reduced the reverberation that causes because of circuit or electronic component reflection external environment light.In a preferred embodiment, dark-coloured extinction structure 300 comprises black matrix structure (Black Matrix).Its form of the composition comprises the organic membrane of individual layer, the inoranic membrane of individual layer, compound organic membrane, compound inoranic membrane or its compound mode.In a preferred embodiment, black matrix structure comprises metal chrome black matrix; Yet in different embodiment, black matrix structure also can comprise the black matrix" of other kind, for example the black matrix of resin black matrix and graphite.
As shown in Figure 3, components of drive circuit 500 is positioned at the top of dark-coloured extinction structure 300.With respect to for the external environment light of display base plate 100 incidents, dark-coloured extinction structure 300 can be covered components of drive circuit 500.Therefore components of drive circuit 500 is difficult for by the external environment rayed, and then avoids external environment light to reflect outside the display base plate 100 by components of drive circuit 500 or its contained metal material.Device of self-luminescence component 700 is folded between electrode layer 710 and another electrode layer 730, and in addition, device of self-luminescence component 700 extensible designs and components of drive circuit 500 have overlapping or zero lap.In preferred embodiment shown in Figure 4, dark-coloured extinction structure 300 is covered the upright projection of components of drive circuit 500 on display base plate 100 inner surfaces 110, thereby obtains preferred screening effect.Components of drive circuit 500 preferably include thin-film transistor (Thin-Film-Transistor, TFT).Yet in different embodiment, components of drive circuit 500 also can be other circuit pattern with similar functions, for example MIM-TFD circuit.The mode that forms thin-film transistor preferably includes amorphous silicon technology (amorphous silicon; A-Si), low temperature polycrystalline silicon technology (Low Temperature poly-silicon; LTPS) and other technology of similar effect can be provided.
As shown in Figure 4, device of self-luminescence component 700 is positioned at inner surface 110 sides of display base plate 100, and is positioned at light-emitting zone 111 substantially.In other words, the light source that device of self-luminescence component 700 is sent is able to penetrate to display base plate 100 via light-emitting zone 111.In a preferred embodiment, as shown in Figure 4, the upright projection of device of self-luminescence component 700 on display base plate 100 inner surfaces 110 drops in the light-emitting zone 111 of inner surface 110.Device of self-luminescence component 700 preferably includes Organic Light Emitting Diode (OLED); Yet in different embodiment, device of self-luminescence component 700 also can comprise macromolecule Organic Light Emitting Diode (PLED).In addition, device of self-luminescence component 700 is connected with components of drive circuit 500 by electrode layer 710.Electrode layer 710 preferably includes tin indium oxide (ITO) film, yet in different embodiment, electrode layer 710 also can comprise transparent or conducting membrane material.Device of self-luminescence component 700 is folded between electrode layer 710 and another electrode layer 730, and in addition, device of self-luminescence component 700 extensible designs and components of drive circuit 500 have overlapping or zero lap.
In the embodiment shown in fig. 5, different according to materials used and admixture, device of self-luminescence component 700 comprises red light-emitting diode, green light LED or blue light-emitting diode, promptly provide respectively ruddiness, green glow or blue light one of them.In addition, adjacent three device of self-luminescence component 700 provide ruddiness R, green glow G and blue light B respectively, to realize the purpose of color harmony, and then full-color display effect is provided, and another electrode layer 730 of corresponding each ruddiness R, green glow G and blue light B device of self-luminescence component 700 can be electrically connected to voltage source (not showing) or different voltage source (not showing).Yet in the embodiment of Fig. 6, device of self-luminescence component 700 is a white light emitting diode, and the output light of white promptly is provided.As shown in Figure 6, be formed with colored filter 200 on the light-emitting zone 113 of display base plate 100 inner surfaces 110.The white light that device of self-luminescence component 700 is sent forms red R, green G and blue B light respectively through behind the colored filter 200.In a preferred embodiment, colored filter 200 covers the whole of display base plates 100, and adjacent with dark-coloured extinction structure 300.
As shown in Figure 3, optical modulation layer 900 is arranged on the outer surface 130 of display base plate 100.Optical modulation layer 900 preferably is arranged on the outer surface 130 of display base plate 100 in the attaching mode; Yet in different embodiment, optical modulation layer 900 also can thin-film technique be formed directly on the outer surface 130 of display base plate 100.Thin-film technique described herein also comprises technologies such as gold-tinted and etching except that modes such as evaporation, deposition, sputter, transfer printing.
In a preferred embodiment, optical modulation layer 900 comprises light polarizing film.Yet in different embodiment, optical modulation layer 900 can postpone ripple plate, anti-glare film or other has the diaphragm that the light sieve subtracts function for neutral density filter (Neutral Density Filter, ND Filter), wavelength.Among the embodiment in the present invention, the light transmission of optical modulation layer 900 is approximately greater than 42%.In a preferred embodiment, the light transmission of optical modulation layer 900 is then approximately between 42% and 80%.The display characteristic and design needs that be to adapt to display also can be further be about the light transmission setting of optical modulation layer 900 between 42% to 44%.In addition, the light reflectivity of optical modulation layer 900 preferably is less than about 50%.
In the embodiment shown in fig. 3, via the driving of components of drive circuit 500, self-emission device 700 emits beam and penetrates the electrode layer 710, display base plate 100 and the optical modulation layer 900 that are connected with components of drive circuit 500 and outwards penetrates.By the obstruct of optical modulation layer 900, can reduce the display base plate 100 external environment light amounts that enter, with improve self-emission device emit beam constituted the contrast of image.In addition,, also can effectively reduce the reflection light quantity that causes because of the incident of external environment light, to reach the effect that increases the display contrast by the collocation setting of optical modulation layer 900 with dark-coloured extinction structure 300.In a preferred embodiment, when the light transmission of optical modulation layer 900 approximately greater than 42% the time, the reflectivity of display integral body can be reduced to below 20% approximately.
As shown in Figure 7, be about 57% light polarizing film as optical modulation layer 900, and when cooperating with dark-coloured extinction structure 300, promptly the reflectivity of may command integral body is below 10% when most situation when display uses light transmission.In addition, owing to be used,, therefore be improved entire system brightness and light utilization rate need not to use under the situation of the low excessively optical modulation layer of light transmission 900 and overall reflectivity can being reduced with dark-coloured extinction structure 300.
Figure 8 shows that another embodiment of the present invention schematic diagram.In this embodiment, the light that self-emission device 700 produces is the electrode layer 710 by being connected with components of drive circuit 500 not, but outwards penetrates via electrode layer 730, colored filter 200, display base plate 100 and the optical modulation layer 900 of opposite side.In this embodiment, components of drive circuit 500 is formed on the dorsolateral placodes 800, can still be positioned at the top of dark-coloured extinction structure 300.In addition, electrode layer 730 preferably includes tin indium oxide (ITO) film, yet in different embodiment, electrode layer 730 also can comprise transparent or conducting membrane material.Device of self-luminescence component 700 is folded between electrode layer 710 and another electrode layer 730, and in addition, device of self-luminescence component 700 extensible designs and components of drive circuit 500 have overlapping (as shown in Figure 8) or zero lap.
The present invention is described by above-mentioned related embodiment, yet the foregoing description is only for implementing example of the present invention.Must be pointed out that the embodiment that has disclosed does not limit the scope of the invention.On the contrary, modification and the equivalent that is included in the spirit and scope of claim includes within the scope of the invention.
Claims (10)
1, a kind of self-emission device display comprises:
Display base plate has inner surface and outer surface, and wherein this inner surface has light-emitting zone and non-luminous region;
Dark-coloured extinction structure is formed on this inner surface of this display base plate, and is positioned at this non-luminous region;
Components of drive circuit is positioned at the top of this dead color extinction structure, and this dead color extinction structure is covered this components of drive circuit substantially;
Device of self-luminescence component is positioned at this inner surface side of this display base plate, and is positioned at this light-emitting zone substantially; Wherein, this device of self-luminescence component is electrically connected with this components of drive circuit; With
Optical modulation layer is arranged on this outer surface of this display base plate, and wherein the light transmission of this optical modulation layer is approximately greater than 42%.
2, display as claimed in claim 1 wherein should dead color extinction structure comprise black matrix structure.
3, display as claimed in claim 1, wherein this optical modulation layer comprises that light polarizing film, neutral density filter (Neutral Density Filter, ND Filter), wavelength postpone ripple plate, anti-glare film or combinations thereof.
4, display as claimed in claim 1 wherein should dead color extinction structure covers this non-luminous region of this inner surface fully.
5, display as claimed in claim 1, wherein this light transmission of this optical modulation layer is approximately less than 80%.
6, display as claimed in claim 1, wherein this light transmission of this optical modulation layer is approximately between 42% to 44%.
7, display as claimed in claim 1, wherein this device of self-luminescence component includes OLED or macromolecule Organic Light Emitting Diode.
8, the display shown in claim 1, wherein this device of self-luminescence component is in order to provide ruddiness, green glow, blue light white light.
9, display as claimed in claim 1 also comprises colored filter, is arranged on this display base plate.
10, display as claimed in claim 1, wherein this components of drive circuit comprises thin-film transistor.
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CN 200610151612 CN1917230A (en) | 2006-09-07 | 2006-09-07 | Low reflectivity self-luminous element display |
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CN 200610151612 CN1917230A (en) | 2006-09-07 | 2006-09-07 | Low reflectivity self-luminous element display |
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CN1917230A true CN1917230A (en) | 2007-02-21 |
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Cited By (7)
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CN103531610A (en) * | 2013-10-28 | 2014-01-22 | 京东方科技集团股份有限公司 | Bottom emission substrate, display device and manufacturing method of substrate |
CN104752489A (en) * | 2015-04-10 | 2015-07-01 | 深圳市华星光电技术有限公司 | Array baseplate, display device and method used for manufacturing array baseplate |
CN106098785A (en) * | 2016-06-15 | 2016-11-09 | 成都捷翼电子科技有限公司 | A kind of transistor with the steady characteristic of light and manufacture method thereof |
CN108630724A (en) * | 2017-03-21 | 2018-10-09 | 宸鸿光电科技股份有限公司 | Organic light emitting diode display device |
CN108630726A (en) * | 2017-03-21 | 2018-10-09 | 宸鸿光电科技股份有限公司 | Organic light emitting diode display device |
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2006
- 2006-09-07 CN CN 200610151612 patent/CN1917230A/en active Pending
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US9583646B2 (en) | 2013-10-28 | 2017-02-28 | Boe Technology Group Co., Ltd. | Bottom-emitting substrate, display device and manufacturing method of substrate |
WO2015062271A1 (en) * | 2013-10-28 | 2015-05-07 | 京东方科技集团股份有限公司 | Bottom transmission substrate, display device and manufacturing method for the substrate |
CN103531610A (en) * | 2013-10-28 | 2014-01-22 | 京东方科技集团股份有限公司 | Bottom emission substrate, display device and manufacturing method of substrate |
US9887255B2 (en) | 2015-04-10 | 2018-02-06 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Array substrate, display device, and method for manufacturing array substrate |
WO2016161691A1 (en) * | 2015-04-10 | 2016-10-13 | 深圳市华星光电技术有限公司 | Array substrate, display apparatus, and method for preparing array substrate |
CN104752489A (en) * | 2015-04-10 | 2015-07-01 | 深圳市华星光电技术有限公司 | Array baseplate, display device and method used for manufacturing array baseplate |
CN106098785A (en) * | 2016-06-15 | 2016-11-09 | 成都捷翼电子科技有限公司 | A kind of transistor with the steady characteristic of light and manufacture method thereof |
CN108630724A (en) * | 2017-03-21 | 2018-10-09 | 宸鸿光电科技股份有限公司 | Organic light emitting diode display device |
CN108630726A (en) * | 2017-03-21 | 2018-10-09 | 宸鸿光电科技股份有限公司 | Organic light emitting diode display device |
CN110222620A (en) * | 2019-05-30 | 2019-09-10 | 武汉华星光电技术有限公司 | A kind of display panel |
US11295107B2 (en) | 2019-05-30 | 2022-04-05 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Display panel |
WO2021159243A1 (en) * | 2020-02-10 | 2021-08-19 | 京东方科技集团股份有限公司 | Array substrate and preparation method therefor, and display device |
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