CN1823458A - Surge absorber - Google Patents
Surge absorber Download PDFInfo
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- CN1823458A CN1823458A CN 200480020661 CN200480020661A CN1823458A CN 1823458 A CN1823458 A CN 1823458A CN 200480020661 CN200480020661 CN 200480020661 CN 200480020661 A CN200480020661 A CN 200480020661A CN 1823458 A CN1823458 A CN 1823458A
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- main discharge
- surge absorber
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- discharge electrode
- oxide
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 85
- 230000003647 oxidation Effects 0.000 claims abstract description 15
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 24
- 238000007789 sealing Methods 0.000 claims description 13
- 238000007599 discharging Methods 0.000 claims description 11
- 239000012774 insulation material Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 abstract description 37
- 239000000126 substance Substances 0.000 abstract description 7
- 238000011049 filling Methods 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000004615 ingredient Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241001076960 Argon Species 0.000 description 1
- 238000000864 Auger spectrum Methods 0.000 description 1
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000013876 argon Nutrition 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- -1 titanium nitrides Chemical class 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- Emergency Protection Circuit Devices (AREA)
Abstract
A surge absorber in which an oxide layer excellent in chemical stability in the high temperature range and excellent in adhesion to main discharge electrodes is deposited on the main discharge electrodes. The surge absorber comprises a cylindrical ceramic body (4) on which conductive films (3) separated by a discharge gap (2) are formed, a pair of main discharge electrode members (5) opposedly disposed at both ends of the cylindrical ceramic body (4) and in contact with the conductive films (3), and a tubular ceramic body (7) in which the paired main discharge electrode members (5) are opposed, the cylindrical ceramic body (4) is contained, and a filling gas (6) is sealed. Each of the paired main discharge electrode members (5) has a projecting support (9). The opposed surfaces of the projecting supports (9) serve as main discharge surfaces (9A). Oxide films (9B) are formed on the main discharge surfaces (9A) by oxidation.
Description
Technical field
The present invention relates to a kind ofly protect various machines because of surging, yet the accident that prevents is in the surge absorber (Surge absorber) that does not use.
Background technology
In the past, part, power line, antenna or the CRT drive circuit etc. that are connected with order wire with e-machine at communicating machines such as telephone set, facsimile machine, modulator-demodulators, be subjected to because the part of the electric shock of abnormal current (burst current) such as thunder surging or static gas or abnormal voltage (surge voltage) easily, in order to prevent the e-machine that produces owing to abnormal voltage or to be equipped with the fire damage or the destruction such as catch fire of the printed base plate of this machine, connected surge absorber.
In the past, proposed for example to utilize the surge absorber of surging absorber element with microgap.This surge absorber is a kind of discharge-type surge absorber, on the side face of the cylindrical ceramic parts that are covered by conductive film covering, be formed with so-called microgap, thereby two ends at ceramic component, there are surging absorber element and sealing gas together to be housed in the glass tube with a pair of hat electrode, at the two ends of cylindric glass tube, the enclosed electrode with lead-in wire is sealed by heat.
In recent years, to the surge absorber of this discharge-type, also carry out long lifetime.As to above-mentioned surge absorber examples of applications, the surge absorber of following structure is arranged: on the face of the main discharge that carries out the hat electrode, the fluidization property SnO also lower during with discharge than hat electrode
2As coating.Thus, the metal ingredient of hat electrode disperses in microgap or glass tube inwall when suppressing main discharge, thereby seeks long lifetime (for example, with reference to patent documentation 1).
And, being accompanied by the miniaturization of machine, mounted on surfaceization is also being carried out.As to above-mentioned surge absorber examples of applications, the surge absorber that following structure is arranged: as surface installing type (MELF (メ Le Off) type), on enclosed electrode, do not have lead-in wire, during installation enclosed electrode and substrate-side are fixed (for example, with reference to patent documentation 2) by soldering.
This surge absorber 100 as shown in figure 12, possesses: the conductive film covering 102 of on one side, being situated between by the discharging gap 101 of central authorities cut apart form tabular ceramic 103; Be configured in a pair of enclosed electrode 105 at these tabular two ends of ceramic 103; And sealing electrode 105 is configured in two ends, with the tabular ceramic 103 cartridge type potteries 107 that together seal with sealing gas 106.
But above-mentioned surge absorber has in the past also stayed following problem.That is, though in above-mentioned surge absorber in the past, for example, formed SnO by film forming methods such as chemical vapor deposition (CVD) methods
2Overlay film, but owing to the SnO to the hat electrode
2The adhesive force of overlay film a little less than, so, by the SnO when the main discharge
2Peeling off of overlay film is difficult to bring into play fully SnO
2The characteristic of overlay film.
Patent documentation 1: the spy open flat 10-106712 communique (the 5th page, Fig. 1)
Patent documentation 2: special open 2000-268934 communique (Fig. 1)
Summary of the invention
The present invention in view of the above problems, its purpose is to provide a kind of good and good to the adhesive force of main discharge electrode oxide skin(coating) of chemical stability in high-temperature area that is coated with, thereby realizes the surge absorber of long lifetime.
The present invention has adopted following formation in order to achieve the above object.That is, according to surge absorber of the present invention, have: the conductive film covering that is situated between by discharging gap is cut apart the insulation material parts that form; The a pair of main discharge electrode parts that dispose relatively and contact with conductive film covering; And should relatively dispose by a pair of main discharge electrode parts, thereby the insulating properties pipe that above-mentioned insulation material parts and sealing gas is together sealed in inside, it is characterized in that: on the main discharge face of above-mentioned a pair of main discharge electrode parts, be formed with the oxide-film that obtains by oxidation processes.
The abnormal current and the abnormal voltages such as surging of invading from the outside, the discharge that will produce in the microgap be as trigger, between the main discharge face as the opposite face of a pair of outstanding support portion, carry out main discharge, thereby surging is absorbed.
According to the present invention, be formed with oxide-film at the main discharge face, so can make the main discharge face that chemical stability is good in high-temperature area.Therefore, the electrode composition of main discharge face disperses and attached to the phenomenon of microgap or insulating properties inside pipe wall etc., can seek the long lifetime of surge absorber when being suppressed at main discharge.And because the adhesive force of this oxide-film and main discharge face is outstanding, so, can bring into play the characteristic of oxide-film.And, because metal that will the high price that chemical stability is good in high-temperature area uses as the main discharge electrode parts, so can utilize cheap metal material to the main discharge electrode parts among the present invention.
And, according to surge absorber of the present invention, have: cut apart the column insulating properties parts that form at the side face conductive film covering that is situated between by the discharging gap of central authorities; Be configured in the two ends of these insulating properties parts relatively, a pair of main discharge electrode parts that contact with above-mentioned conductive film covering; And with above-mentioned a pair of main discharge electrode component configuration at two ends, thereby the insulating properties pipe that above-mentioned insulating properties parts and sealing gas is together sealed in inside, it is characterized in that: above-mentioned main discharge electrode parts have: with the bonding circumference of end face of wax material and above-mentioned insulating properties pipe; And to the inboard of above-mentioned insulating properties pipe and axially outstanding, and support the outstanding support portion of above-mentioned insulating properties parts at the radially inner side face, on main discharge face, be formed with the oxide-film that obtains by oxidation processes as the opposite face of the above-mentioned outstanding support portion of above-mentioned a pair of main discharge electrode parts.
According to the present invention, owing to form the good oxide-film of adhesive force with the main discharge face, so the characteristic of performance oxide-film can be sought the long lifetime of surge absorber.
And,, it is characterized in that the average film thickness of above-mentioned oxide-film is more than the 0.01 μ m, below the 2.0 μ m according to surge absorber of the present invention.
According to the present invention, because the average film thickness of oxide-film is more than the 0.01 μ m, so can fully suppress because the dispersing of the electrode composition of the main discharge electrode parts of main discharge.And owing to be below the 2.0 μ m, so can suppress because of disperse the easily short lifeization of the surge absorber that causes of oxide-film.
And in order to realize the long lifetime more of surge absorber, the average film thickness of oxide-film is for satisfying more than the 0.2 μ m, being advisable below the 1.0 μ m.
And relevant surge absorber of the present invention is characterized in that above-mentioned sparking electrode parts are the parts that comprise Cr, and on above-mentioned oxide-film surface, surperficial enrichment has Cr.
According to the present invention, by good, high melting point in oxide-film surface enrichment chemical stability in high-temperature area, as to have conductivity Cr (chromium) oxide, form the good oxide-film of adhesive force at the main discharge face, so, can bring into play the characteristic of oxide-film, seek the long lifetime of surge absorber.
At this, enrichment means that the composition of volume of ratio of components main discharge electrode parts on oxide-film surface is big.
The invention effect
According to surge absorber of the present invention, because the oxide-film that forms by oxidation processes has the characteristic of chemical stabilization in high-temperature area, and good to the adhesive force of main discharge face, so, can give full play to the oxide-film characteristic.Therefore, can realize the long lifetime of surge absorber.
Description of drawings
Fig. 1 is the direction of principal axis profile of the surge absorber of relevant the 1st execution mode of the present invention of expression.
Fig. 2 represents the terminal electrode parts of relevant the 1st execution mode of the present invention, (a) is plane graph, (b) is the X-X alignment pseudosection in (a).
Profile when Fig. 3 is installed on the substrate for the surge absorber with relevant the 1st execution mode of the present invention.
Fig. 4 is the direction of principal axis profile of the surge absorber of relevant the 2nd execution mode of the present invention of expression.
Fig. 5 represents the surge absorber of relevant the 3rd execution mode of the present invention, (a) is the direction of principal axis profile, (b) is the contact portion enlarged drawing between terminal electrode parts and the hat electrode.
Fig. 6 is the direction of principal axis profile of the surge absorber of relevant the 4th execution mode of the present invention of expression.
Fig. 7 is the direction of principal axis profile of the surge absorber of relevant the 5th execution mode of the present invention of expression.
Fig. 8 is the direction of principal axis profile of the surge absorber of relevant the 6th execution mode of the present invention of expression.
Fig. 9 is the time of the burst current of the relevant embodiments of the invention of expression and the curve chart of the relation between the current value.
Figure 10 is the discharge time of the surge absorber of the relevant embodiments of the invention of expression and the curve chart of the relation between the discharge ionization voltage.
Figure 11 is expression profile except that relevant embodiments of the present invention, applicable surge absorber of the present invention.
Figure 12 is the profile of expression surge absorber in the past.
1,20,30,40,50, the 60-surge absorber explanation of symbol:; 2,61,101-discharging gap; 3,62,102-conductive film covering; 4-cylindricity pottery (insulating properties parts); 5,21,31,41,51,64,105-main discharge electrode parts; The 5A-circumference; 6,106-sealing gas; 7,107-cartridge type pottery (insulating properties pipe); 8,33-wax material; 9, the outstanding support portion of 24-; 9A, 23A, 55B, 65B, 109A-main discharge face; 9B, 23B, 42C, 55A, 65A, 109B-oxide-film; 42A-bottom surface (main discharge face); 52-glass tube (insulating properties pipe); 63, the tabular pottery of 103-(insulating properties parts).
Embodiment
Below, referring to figs. 1 through Fig. 3, the 1st execution mode of relevant surge absorber of the present invention is described.
Surge absorber 1 according to present embodiment, as shown in Figure 1, be to use the discharge-type surge absorber of so-called microgap, have: being situated between at side face, conductive film covering 3 is cut apart the columned cylindrical ceramic (insulating properties parts) 4 that forms by the discharging gap 2 of central authorities; Be configured in the two ends of this cylindrical ceramic 4 relatively, and a pair of main discharge electrode parts 5 that contact with conductive film covering 3; And should be configured in two ends by a pair of main discharge electrode parts 5, the cartridge type pottery (insulating properties pipe) 7 that cylindrical ceramic 4 and for example Ar sealing gas 6 such as (argons) that is adjusted composition etc. in order to obtain desirable electrical characteristic is together sealed in inside.
Cylindrical ceramic 4 is for example formed by ceramic materials such as mullite sintered bodies, from the teeth outwards as conductive film covering 3, is formed with the TiN films such as (titanium nitrides) by the film formation technology formation of physical vapor deposition (PVD) method, chemical vapor deposition (CVD) method.
Discharging gap 2, by processing such as laser cutting, fritter cutting (dicing), etchings, the width with 0.01 to 1.5mm is formed 1 to 100, but has formed the discharging gap of 1 150 μ m in the present embodiment.
A pair of main discharge electrode parts 5 are by Fe (iron), Ni (nickel) and as the kovar of Co (cobalt) alloy (KOVAR: registered trade mark) constitute.
As shown in Figure 2, these a pair of main discharge electrode parts 5 have: become OBL circumference 5A below 1 with the bonding aspect ratio of the end face of cartridge type pottery 7 respectively with wax material 8; And to the inboard of cartridge type pottery 7 and axially outstanding, and the outstanding support portion 9 of support cylinder shape pottery 4, thereby, be highlighted support portion 9 and center on, with the relative position of cylindrical ceramic 4 ends on be formed with middle section 5B.
Be advisable for the radially inner side face has taper a little in outstanding support portion 9, so that easily the end of radially inner side face and cylindrical ceramic 4 is pressed into or chimeric.And the relative face of the front end of outstanding support portion 9 forms main discharge face 9A.
At this, by carry out 30 minutes oxidation processes with 500 ℃ in atmosphere, on the main discharge face 9A of main discharge electrode parts 5, being formed with average film thickness is the oxide-film 9B of 0.6 μ m.
Then, manufacture method as the surge absorber 1 of the present embodiment of above-mentioned formation is described.
At first, pair of terminal electrod assembly 5 is integrally formed with desirable shape by punch process.Afterwards, to main discharge face 9A,, form the oxide-film 9B of average film thickness 0.6 μ m by in atmosphere, carrying out 30 minutes oxidation processes with 500 ℃.The film thickness of this oxide-film 9B by FIB (FocusedIon Beam), carries out ditch processing on oxide-film 9B surface, thus with this ditch section with measure with scanning electron microscope a plurality of positions for example the mean value at 20 positions set.
Then, in order to improve the wettability with wax material 8, on the both ends of the surface of cartridge type pottery 7, form and for example have molybdenum (Mo) respectively-metal layer of tungsten (W) layer and each one deck of Ni layer.
Afterwards, on the middle section 5B of a side terminal electrode parts 5, mounting cylindrical ceramic 4, thus the radially inner side face is contacted with the end face of cylindrical ceramic 4.And between the end face of circumference 5A and cartridge type pottery 7, clamp under the state of wax material 8, cartridge type pottery 7 is positioned on the circumference 5A of the opposing party's terminal electrode parts 5.
And mounting terminal electrode the parts 5 and radially inner side face is contacted with terminal electrode parts (5) are so that the top of cylindrical ceramic 4 is relative with middle section 5B.And, between the end face of circumference 5A and cartridge type pottery 7, to clamp the setting state of wax material 8.
Under the state that trial assembly is joined as mentioned above, attract vacuum fully after, be heated to till wax material 8 as atmosphere is melted, behind the melting sealed cylindrical ceramic 4 by wax material 8, carry out quench cooled, thereby produce surge absorber 1.
With the surge absorber of so making 1, for example, as shown in Figure 3, mounting is adhesively fixed the outside of substrate B and pair of terminal electrod assembly 5 and uses as the installed surface 7A of a side of cartridge type pottery 7 by scolder S on substrate B such as printed base plate.
According to above-mentioned formation, it is the oxide-film 9B below the 2.0 μ m more than the 0.01 μ m that the oxidation processes by main discharge face 9A forms average film thickness, so main discharge face 9A can become chemical in the high temperature field (thermodynamics) stable properties.And because the adhesive force of this oxide-film 9B and main discharge electrode parts 5 is outstanding, so can bring into play the characteristic of oxide-film 9B.Therefore, even outstanding support portion 9 becomes high temperature when main discharge, the metal ingredient that also can fully suppress main discharge electrode parts 5 disperses to the inwall of microgap 2 or cartridge type pottery 7 etc.Can seek the long lifetime of surge absorber thus.
Secondly, with reference to Fig. 4, relevant the 2nd execution mode of the present invention is described.
At this illustrated execution mode, its basic comprising is identical with above-mentioned the 1st execution mode, adds other key elements on the formation of above-mentioned the 1st execution mode.Therefore, in Fig. 4, the inscape identical with Fig. 1 used same-sign, and omit explanation it.
The difference of the 2nd execution mode and the 1st execution mode is: in the 1st execution mode, outstanding support portion 9 by main discharge electrode parts 5, the formation of support cylinder shape pottery 4, with respect to the 1st execution mode, surge absorber 20 in the 2nd execution mode, have terminal electrode parts 22 and hat electrode 23 as the identical formation of main discharge electrode parts in main discharge electrode parts 21 and the 1st execution mode 5, therefore, cylindrical ceramic 4 Jie are supported on the outstanding support portion 24 that is arranged at terminal electrode parts 22 by hat electrode 23.
A pair of hat electrode 23, also low by hardness ratio cylindrical ceramic 4 and metals such as for example stainless steel that can be plastically deformed constitute, peripheral part extends than the front end of the outstanding support portion 24 of terminal electrode parts 22 is more inboard, thereby section is shown the formation of U word shape greatly, becomes main discharge face 23A.
For example, during for the 18-8 stainless steel, the surface of this a pair of hat electrode 23 is to carry out 40 minutes oxidation processes with 700 ℃ in the reducing atmosphere of given oxygen concentration control, thereby be formed with the oxide-film 23B of the Cr enrichment of 0.6 μ m from the teeth outwards.
Then, the manufacture method of using by the surge absorber 20 of the above-mentioned present embodiment that constitutes the 18-8 metal cap of forming is described.
At first, pair of terminal electrod assembly 22 carried out annealing in process after, integrally formed by punch process.
Afterwards, on a pair of hat electrode 23 surfaces, by carrying out 40 minutes oxidation processes with 700 ℃ in the reducing atmosphere of given oxygen concentration control, the average film thickness of Cr enrichment more than 10% arranged is the oxide-film 23B of 0.6 μ m thereby be formed on the oxide-film surface.At this, the Cr enrichment on oxide-film 23B surface by the surface analysis according to the Auger spectrum analysis, is measured a plurality of positions, for example measures 5 positions, records mean value and confirms.
Afterwards, make a pair of hat electrode 23 be engaged on the two ends of cylindrical ceramic 4, the method by identical with the 1st execution mode produces surge absorber 20.
This surge absorber 20 has effect and the effect identical with the surge absorber 1 of relevant above-mentioned the 1st execution mode.
Secondly, with reference to Fig. 5, relevant the 3rd execution mode of the present invention is described.
And at this illustrated execution mode, its basic comprising is identical with above-mentioned the 2nd execution mode, adds other key elements in above-mentioned the 2nd execution mode.Therefore, in Fig. 5, the inscape identical with Fig. 4 used same-sign, and omit explanation it.
The difference of the 3rd execution mode and the 2nd execution mode is: in the 2nd execution mode, has the integrally formed outstanding support portion 24 of terminal electrode parts 22, with respect to the 2nd execution mode, in the surge absorber 30 in the 3rd execution mode, shown in Fig. 5 (a), main discharge electrode parts 31 are made of flat terminal electrode parts 32 and hat electrode 23.
And, in the interior surface opposing of this pair of terminal electrod assembly 32, be coated with wax material 33.
This wax material 33 shown in Fig. 5 (b), has: filling part 35, and it is filled in the gap 34 that forms on the contact-making surface of pair of terminal electrod assembly 32 and hat electrode 23; And maintaining part 36, at the outer peripheral face of the two ends of hat electrode 23 maintenance hat electrode 23.
And the height h of maintaining part 36 forms also lower than the height of hat electrode 23.Thus, the face relative to each other of hat electrode 23 becomes main discharge face 23A.
Then, manufacture method as the surge absorber 30 of the present embodiment of above-mentioned formation is described.
At first, with above-mentioned the 2nd execution mode in the same manner, on the surface of a pair of hat electrode 23, form oxide-film 23B, make it be engaged on the two ends of cylindrical ceramic 4.
Afterwards, coating forms the wax material 33 of the required q.s of maintaining part 36 on the one side of terminal electrode parts 32, on the middle section of terminal electrode parts 32, mounting is engaged with the cylindrical ceramic 4 of hat electrode 23, thereby terminal electrode parts 32 are contacted with hat electrode 23.Afterwards, the end face of mounting cartridge type pottery 7.
And mounting is coated with the terminal electrode parts 32 of the opposite side of wax material 33 on the end face of the opposite side of cartridge type pottery 7, is set at the state that trial assembly is joined.
Sealing process then is described.To join element under the state as above-mentioned trial assembly, and carry out heat treated in Ar atmosphere, thereby wax material 33 be melted, thus, terminal electrode parts 32 fit tightly mutually with hat electrod assembly A.At this moment, by this fusion, the gap 34 that exists between hat electrode 23 and the terminal electrode parts 32 is filled in the filling part 35 of wax material 33.And the maintaining part 36 that is formed by the surface tension of wax material 33 keeps so that imbed the both ends of hat electrode 23.
Afterwards, by carrying out refrigerating work procedure in the same manner, make surge absorber 30 with above-mentioned the 1st execution mode.
This surge absorber 30 has effect and the effect identical with the surge absorber 1 of relevant above-mentioned the 1st execution mode.
And, in the present embodiment, though formed maintaining part 36 and filling part 35 by the parts identical with wax material 33, but filling part 35 forms also passable by the material different with wax material 33, for example, can bonding oxide-film 23B as silver-colored wax of activity etc. and the adhesive of the conductivity of terminal electrode parts 32 also passable.Thus, hat electrode 23 and terminal electrode parts 32 are bonding, thereby can obtain contacting with ohm (ohmic) more fully of main discharge electrode parts 31 and conductive film covering 3.Thereby the electrical characteristics such as discharge ionization voltage of surge absorber 30 are stable.
And maintaining part 36 also can be formed by the material different with wax material 33 in the same manner with filling part 35.For example, utilization is also passable with respect to wax material 33 or the difficult wet glass material of active silver-colored wax.Thus, cylindrical ceramic 4 is fixed near or its periphery of central authorities of terminal electrode parts 32 more definitely.
Secondly, with reference to Fig. 6, relevant the 4th execution mode of the present invention is described.
At this illustrated execution mode, its basic comprising is identical with above-mentioned the 1st execution mode, adds other key elements in above-mentioned the 1st execution mode.Therefore, at Fig. 6, to the inscape use same-sign same with Fig. 1, and omission is to its explanation.
The difference of the 4th execution mode and the 1st execution mode is: in the 1st execution mode be, main discharge electrode parts 5 have integrally formed outstanding support portion 9, cylindrical ceramic 4 is pressed into or is entrenched in the formation of this outstanding support portion 9, with respect to the 1st execution mode, surge absorber 40 in the 4th execution mode is that main discharge electrode parts 41 are made of terminal electrode parts 32 and outstanding support component 42.
Outstanding holding member 42 has the cylindric of the end is roughly arranged, and 42A central authorities in bottom surface are formed with opening 42B.The opening diameter of this opening 42B forms also smaller a little than cylindrical ceramic 4.And cylindrical ceramic 4 inserts logical opening 42B, thereby makes bottom surface 42A outside flexing flexiblely axially, obtains the good Ohmic contact of outstanding support component 42 and conductive film covering 3.
And, on the surface of this a pair of outstanding support component 42, be formed with the oxide-film 42C of 0.6 μ m by the oxidation processes identical with above-mentioned the 1st execution mode, become the main discharge face as the bottom surface 42A of opposite face.
This surge absorber 40 has effect and the effect identical with the surge absorber 1 of the 1st above-mentioned execution mode.
Secondly, with reference to Fig. 7, relevant the 5th execution mode of the present invention is described.
And at this illustrated execution mode, its basic comprising is identical with above-mentioned the 1st execution mode, adds other key elements in above-mentioned the 1st execution mode.Therefore, at Fig. 7, to the inscape use same-sign same with Fig. 1, and omission is to its explanation.
The difference of the 5th execution mode and the 1st execution mode is: in the 1st execution mode, surge absorber is the surface installing type surge absorber that is positioned on the substrate, with respect to the 1st execution mode, the surge absorber 50 in the 5th execution mode is for possessing the surge absorber of lead-in wire.
That is, surge absorber 50 has: conductive film covering 3 is cut apart the cylindrical ceramic 4 of formation; Be configured in the main discharge electrode parts 51 at the two ends of this cylindrical ceramic 4; And with cylindrical ceramic 4 and these main discharge electrode parts 51 sealed glass pipe 52 together.
Main discharge electrode parts 51, the lead-in wire 56 that has hat electrode 55 and extend out from the rear end of hat electrode 55.
On the surface of this a pair of hat electrode 55, be formed with the oxide-film 55A of 0.6 μ m by the oxidation processes identical with above-mentioned the 1st execution mode, face relative to each other becomes main discharge face 55B.
Glass tube 52 is configured to be capped cylindrical ceramic 4 and a pair of hat electrode 55, and lead-in wire 56 is outstanding from two ends.
This surge absorber 50 has effect and the effect identical with the surge absorber 1 of relevant above-mentioned the 1st execution mode.
Secondly, with reference to Fig. 8, relevant the 6th execution mode of the present invention is described.
At this illustrated execution mode, its basic comprising is identical with above-mentioned the 5th execution mode, adds other key elements in above-mentioned the 5th execution mode.Therefore, at Fig. 8, to the inscape use same-sign same with Fig. 7, and omission is to its explanation.
The difference of the 6th execution mode and the 5th execution mode is: in the 5th execution mode, hat electrode 55 is configured in the two ends that conductive film covering 3 is cut apart the cylindrical ceramic 4 of formation, with respect to the 5th execution mode, surge absorber 60 in the 6th execution mode, on one side, be situated between by discharging gap 61 and cut apart tabular ceramic 63 the two ends that form, dispose these main discharge electrode parts 64 of tabular ceramic 63 of clamping at conductive film covering 62.
Main discharge electrode parts 64 have the folder formula electrode 65 of clamping tabular ceramic 63 when contacting with conductive film covering 62 and are arranged on the lead-in wire 56 of folder formula electrode 65 rear ends.
On the surface of folder formula electrode 65, by with the identical oxidation processes of above-mentioned the 1st execution mode, be formed with the oxide-film 65A of 0.6 μ m, face relative to each other becomes main discharge face 65B.Afterwards should 65 clampings of folder formula electrode tabular ceramic 63, thus constitute the good Ohmic contact that can obtain conductive film covering 62 and folder formula electrode 65.
This surge absorber 60 has effect and the effect identical with the surge absorber 1 of relevant above-mentioned the 1st execution mode.
(embodiment 1)
Secondly, with reference to Fig. 9 and Figure 10, explain relevant surge absorber of the present invention by embodiment.
With about the surge absorber 20 of the 2nd above-mentioned execution mode and do not have the surge absorber in the past of oxide-film 23B to be installed in substrate etc. respectively and life-span when using compares.
Particularly,,, be applied to repeatedly in the surge absorber, the result who measures discharge ionization voltage V in the gap of this moment is represented in Figure 10 with given number of times with burst current as shown in Figure 9 as embodiment.
Surge absorber in the past, if apply burst current repeatedly, then the metal ingredient of the metal electrode of main discharge electrode parts mostly is and disperses, because under these metal ingredients pile up in the short time in the microgap, so discharge ionization voltage between the gap reduces and reaches its life-span.On the other hand, according to surge absorber 20 of the present invention, because because of the dispersing of electrode composition of oxide-film 23B main discharge electrode parts 23 is suppressed, so the accumulation of the metal ingredient in discharging gap 2 is not many, therefore, the discharge ionization voltage between the gap is very stable as can be known.
And the present invention not only is defined in above-mentioned execution mode, in the scope that does not exceed purport of the present invention, can make all distortion and modification.
For example, also a kind of on main discharge face 109A as shown in figure 11 as the face relative to each other of a pair of flat spring conductor 109, form the surge absorber 70 of oxide-film 109B by the oxidation processes identical with above-mentioned the 1st execution mode.So formation also can obtain effect same as described above and effect.
And conductive film covering can be Ag (silver), Ag (silver)/Pd (palladium) alloy, SnO
2(tin oxide), Al (aluminium), Ni (nickel), Cu (copper), Ti (titanium), Ta (tantalum), W (tungsten), SiC (carborundum), BaAl (barium aluminium oxide), C (carbon), Ag (silver)/Pt (platinum) alloy, TiO (titanium oxide), TiC (charing titanium), TiCN (titanium carbonitride) etc.
And the main discharge electrode parts can be alloy for Cu or Ni.
And the metal layer of cartridge type pottery both ends of the surface can be Ag (silver), Cu (copper) or Au (gold), and also can not utilize metal layer, only with the sealing of reactive metal wax material.
And, sealing gas, its composition waits and is adjusted in order to obtain desirable electrical characteristic, for example can be atmosphere (air), also can be Ar (argon), N
2(nitrogen), Ne (neon), He (helium), Xe (xenon), H
2(hydrogen), SF
6, CF
4, C
2F
6, C
3F
8, CO
2The mist of (carbon dioxide) etc. and these gases.
Claims (4)
1, a kind of surge absorber possesses: the conductive film covering that is situated between by discharging gap is cut apart the insulation material parts that form; The a pair of main discharge electrode parts that dispose relatively and contact with described conductive film covering; And should relatively dispose by a pair of main discharge electrode parts, thereby the insulating properties pipe that described insulation material parts and sealing gas is together sealed in inside it is characterized in that,
On the main discharge face of described a pair of main discharge electrode parts, be formed with the oxide-film that obtains by oxidation processes.
2. surge absorber as claimed in claim 1 possesses: cut apart the column insulating properties parts that form at the side face conductive film covering that is situated between by the discharging gap of central authorities; Be configured in the two ends of these insulating properties parts relatively, a pair of main discharge electrode parts that contact with described conductive film covering; And with described a pair of main discharge electrode component configuration at two ends, thereby the insulating properties pipe that described insulating properties parts and sealing gas is together sealed in inside it is characterized in that,
Described main discharge electrode parts possess: circumference, and its end face with wax material and described insulating properties pipe is bonding; And outstanding support portion, it is to the inboard of described insulating properties pipe and axially outstanding, and supports described insulating properties parts at the radially inner side face,
On main discharge face, be formed with the oxide-film that obtains by oxidation processes as the opposite face of the described outstanding support portion of described a pair of main discharge electrode parts.
3. surge absorber as claimed in claim 1 or 2 is characterized in that,
The average film thickness of described oxide-film is below the above 2.0 μ m of 0.01 μ m.
4. as each described surge absorber of claim 1～3, it is characterized in that,
Described main discharge electrode parts are the parts that comprise Cr, and on described oxide-film surface, surperficial enrichment has Cr.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003198667 | 2003-07-17 | ||
| JP198667/2003 | 2003-07-17 | ||
| JP065728/2004 | 2004-03-09 |
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| Publication Number | Publication Date |
|---|---|
| CN1823458A true CN1823458A (en) | 2006-08-23 |
| CN100566057C CN100566057C (en) | 2009-12-02 |
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102057546A (en) * | 2008-06-12 | 2011-05-11 | 松下电器产业株式会社 | Static electricity countermeasure component and method for manufacturing the same |
| CN111192797A (en) * | 2020-01-22 | 2020-05-22 | 西北核技术研究院 | A kind of high-voltage and high-current fuse sealing packaging method |
-
2004
- 2004-07-13 CN CNB2004800206615A patent/CN100566057C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102057546A (en) * | 2008-06-12 | 2011-05-11 | 松下电器产业株式会社 | Static electricity countermeasure component and method for manufacturing the same |
| CN111192797A (en) * | 2020-01-22 | 2020-05-22 | 西北核技术研究院 | A kind of high-voltage and high-current fuse sealing packaging method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100566057C (en) | 2009-12-02 |
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