CN1744342A - Field-effect transistor comprising an organic semiconductor layer - Google Patents
Field-effect transistor comprising an organic semiconductor layer Download PDFInfo
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- CN1744342A CN1744342A CNA2005100921619A CN200510092161A CN1744342A CN 1744342 A CN1744342 A CN 1744342A CN A2005100921619 A CNA2005100921619 A CN A2005100921619A CN 200510092161 A CN200510092161 A CN 200510092161A CN 1744342 A CN1744342 A CN 1744342A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Provided is a field-effect transistor ( 10 ) which comprises a metal or carbon source electrode ( 14 ) and a layer of a functional organic semiconductor ( 28 ). A column of an injection material ( 48 ) extends through the layer of the functional organic semiconductor ( 28 ), the column being in contact with both the source electrode ( 14 ) and the layer of the functional organic semiconductor ( 28 ). This column ( 48 ) facilitates the transfer charge carriers between the source electrode ( 14 ) and semiconductor layer ( 28 ). The injection material is preferably an organic compound such as 3-hexylthiophene, polyarylamine, poly(3,4-ethylenedioxythiophene)-polystyrenesulphonic acid or polyaniline.
Description
Technical field
The present invention relates to a kind of field-effect transistor that comprises organic semiconductor layer, a kind of especially like this transistor, wherein promoted charge carrier organic semiconductor layer and with electrode that it is associated between migration.
Background technology
It is known that making forms the field effect transistor that comprises semiconductor layer by for example organic material of the copolymer of poly-fluorenes, pentacene, polythiophene or fluorenes and thiophene.Organic semiconductor layer especially contacts with the source electrode that is provided for its power supply.Source electrode is formed by for example metal or the carbon of gold, so that it has high relatively conductance.For example, this situation for the field-effect transistor of the large scale array that may use in display device is especially favourable.
Contact between organic semiconductor and metal or the carbon source utmost point usually is a non-resistance, as by N.Koch etc. at Appl.Phys.Letts., 82,2003 and E.Brandon etc. at Appl.Phys.Letts., disclosed in 83,2003.This non-resistance contact causes suppressing charge carrier and is injected into the organic semi-conductor contact resistance from source electrode.Typically, the contact resistance in the OTFT is every millimeter scope of megaohm (E.J.Meiger, Appl.Phys.Letts., 82,2003) and by the expression that moves up of transistor threshold voltage.This has needs to increase the shortcoming that voltage comes operate transistor.
Existing several suggestions solve the interfacial high contact resistance problem between source electrode and semiconductor layer.For example, S.H.Kim etc. at J.Korean.Phys.Soc., propose chemically to revise source electrode in 42,2003 by depositing the auto polymerization individual layer thereon.Perhaps, R.A.Street etc. are at Appl.Phys.Lett., propose to change the interfacial geometry of electrode-semiconductor in 81,2002.At last, L.Edman etc. are at Appl.Phys.Letts., propose the organic semi-conductor electrochemical doping in 84,2004, inject character so that improve, thereby reduce the contact resistance with the junction point of electrode.
Above-mentioned suggestion neither one proves success in business practice.Especially, it uses relatively costly and/or does not produce the result of the actual minimizing of contact resistance.
The inventor recognizes that the high contact resistance between organic semiconductor layer and the source electrode is because the existence of the energy barrier that charge carrier must pass during they move from source electrode to the function organic semi-conductor.This energy barrier is because the Fermi energy of the material of formation source electrode and the energy level difference between the organic semi-conductor top of valence band energy (valence band edge energy).Typically, this energy barrier is the magnitude of 1.5-2eV.For example, under the situation that source electrode is formed by gold, the function organic semiconductor is formed by thiophene, energy barrier is 1.7eV.
The inventor considers and can reduce this energy barrier by the mobility of charge carrier that provides some injection materials to be beneficial to therebetween between source electrode and organic semiconductor.Injection material provides an intermediate energy ladder (energy step), wherein the energy that has of charge carrier is between the Fermi energy and organic semi-conductor top of valence band energy of the material that forms source electrode, thereby so that charge carrier finish migration and move to organic semiconductor layer from source electrode.
WO2003/041184 and WO2004/004022 have illustrated the field-effect transistor that comprises source electrode, function (functional) organic semiconductor layer and move the injection material layer of charge carrier from the source electrode to the organic semiconductor layer.In WO2003/041184, injection material is the metal chalcogenide of layering.The plated metal chalkogenide as the extended layer of bridge joint source and drain electrode, and carries out subsequently formation pattern step to it.In WO2004/004022, injection material is nitrile or isonitrile layer.It is deposited on the electrode by pattern ground (pattern-wise), because injection material is selected as having specific affinity for the material that forms electrode.
Summary of the invention
The purpose of this invention is to provide a kind of at field-effect transistor source electrode and the function organic semiconductor between the optional and simpler means of some injection materials are provided.
Therefore, according to first aspect, the invention provides a kind of field-effect transistor, comprise source electrode, the function organic semiconductor of metal or carbon and extend through the column (column) of function organic semi-conductor injection material, described column contacts with the mobility of charge carrier between helping simultaneously with source electrode and function organic semiconductor.
Term " function organic semiconductor " expression that the other parts of preamble and this specification are used formed and played the part of active role by organic molecule in the field-effect transistor function semiconductor.In the present context, typically, field-effect transistor is a thin-film transistor.
Have with source electrode contacted and extended through the latter's injection material simultaneously with the function organic semiconductor column to help the function that charge carrier moves from the source electrode to the organic semi-conductor, thereby reduce contact resistance.Injection material is according to a kind of available energy level form, and ladder in the middle of a kind of the energy level of the charge carrier in the energy level of charge carrier in electrode and the organic semiconductor that charge carrier passes from source electrode to semi-conductive transition process is provided.The energy of charge carrier is corresponding to the Fermi energy of the material that forms electrode in the electrode.The energy of charge carrier is corresponding with function organic semi-conductor top of valence band energy in the semiconductor.Select injection material, make its top of valence band energy between the Fermi energy and function organic semi-conductor top of valence band energy of the material that forms electrode.
According to preferred aspect, the top of valence band energy of injection material should be near the Fermi energy and the centre position between the function organic semi-conductor top of valence band energy of the material that forms source electrode.Consider this, preferably, the top of valence band energy that the material of formation implanted layer has is:
Greater than
And less than
Wherein S is a function organic semi-conductor top of valence band energy, and E is the Fermi energy that forms the material of source electrode.
The Fermi energy of the material of function organic semi-conductor top of valence band energy and formation source electrode can be measured by ultraviolet photoelectron spectroscopy (UPS) technology, for example at the Principles of J.W.Rabalais of Ultraviolet Photoeletron Spectroscopy, Wiley1977 and H.Ishii etc. are at Adv.Master., the technology of being taught in 11,1999.Also can utilize the chemical doping mode to measure the top of valence band energy value of material, as the Principlesof Instrumental Analysis of D.A.Skoog etc., Saunders College Publishing teaches among the Philadelphia.
More preferably, form implanted layer material the top of valence band energy should:
Greater than
And less than
Wherein S and E such as front define.
More preferably, form implanted layer material the top of valence band energy should:
Greater than
And less than
Preferably, source electrode is formed by for example metal of gold.Preferably, the function organic semiconductor is formed by the copolymer of poly-fluorenes, pentacene, polythiophene or fluorenes and thiophene.
Organic/organic interface provides better injection character than organic/metal interface,, discusses in 1999 at Adv.Meter.11 as H.Ishii etc.As a result, preferably, injection material is formed by the organic semiconductor condensate.This condensate comprises for example poly--3-hexyl thiophene (P3HT) or polyaryl amine (PAA).Perhaps, injection material can be formed by organic conductor.This conductor comprises poly-(3,4-ethylene chloro thiophene)-polystyrene sulfuric acid (PEDOT:PSS) or polyaniline (PANI).
According on the other hand, the invention provides a kind of method that forms field effect transistor, comprise step:
(i) corresponding to transistorized source and drain electrode, the metal that on substrate, deposits or the pattern of carbon,
(ii) on pattern, deposit the function organic semiconductor layer,
(iii) form by the through hole of function organic semiconductor to source electrode,
(iv) in through hole, deposit the column of injection material and contact source electrode,
(v) deposition is cut off the source layer on the function organic semiconductor layer, and
(vi) corresponding to transistorized grid, the pattern of deposited conductor material on the layer of exhausted source.
Injection material is set, makes it be beneficial to carrier mobility between source electrode and the raceway groove.
According on the other hand, the invention provides the method that forms field-effect transistor, comprise step:
(i) corresponding to transistorized grid, deposited conductor patterns of material on substrate,
(ii) deposition is cut off the source layer thereon,
(iii) deposit the function organic semiconductor layer thereon,
(iv) in the function organic semiconductor, form through hole,
(v) in through hole, deposit the column of injection material, and
(vi) corresponding to transistorized source and drain electrode, the pattern of plated metal or carbon on the function organic semiconductor, described source electrode contacts with the column of injection material,
Injection material is set, makes it be beneficial to carrier mobility between source electrode and the raceway groove.
The present invention particularly preferred aspect, by ink jet printing injection material is deposited in the through hole.
Description of drawings
With reference now to specific embodiment and accompanying drawing, explain the present invention, wherein:
Fig. 1 schematically shows the cross section of the thin-film transistor of the column that has injection material according to the present invention,
Fig. 2 schematically shows the cross section of the deposition of the column of injection material during thin-film transistor shown in Figure 1 is made; And
Fig. 3 schematically shows the cross section that the another kind of the tft layer of the column that has injection material according to the present invention select to be provided with.
Embodiment
At first turn to Fig. 1, it schematically shows the cross section of the top grid/bottom contact membrane transistor 10 of first embodiment of the invention.Transistor 10 comprises the substrate 12 that the material by any conventional forms, for example the plastics or the glass of poly-naphthalene ethyl ester (PEN).The conventional art of the ink jet printing by the diffusion of for example photoetching or conducting particles, the pattern of formation source and drain electrode 14 and 16 on substrate respectively.Can form electrode by for example any suitable metal or the carbon of gold, chromium or platinum.About 100nm is thick for electrode.
Deposit organic semiconductor layer 20 with the about 50nm of thickness by the spin coated mode.Can form organic semiconductor by for example poly-fluorenes, pentacene, polythiophene, fluorenes and the copolymer of thiophene and the material of any derivative thereof.
Then, produce the through hole that passes through semiconductor layer 20.This can be by T.Kawase for example etc. at Advanced Materials, and 13, No.21, the 2001 solvents borings of being taught are finished.By optionally at organic semiconductor ink jet printing solvent so that stay through hole with its dissolving and in the position of hope, carry out solvent boring.Choice of Solvent depends on organic semiconductor naturally, and wherein for example the high boiling organic solvent that has of dichloro-benzenes is preferred.The diameter typical case of the through hole that is formed by solvent boring is 20-60 μ m, and more typical is 30-50 μ m.Perhaps, can pass through microcosmic embossing (micro embossing) and form through hole, the microcosmic embossing can form the more aperture with 1 μ m even littler diameter.
As shown in Figure 2, then, ink jet printing head 42 is used for the droplet 40 of the diffusion of solution or injection material is deposited in the through hole, so that deposit injection material 38 therein.Injection material can be conductor or semiconductor.For example, form column as the PEDOT:PSS of injection material by following process: the gluey particle that will have the PEDOT:PSS of the about 100nm of mean particle diameter is diffused in the water, utilize ink jet printing head then, will have average-size and be expelled in the through hole greater than the droplet of 30 μ m.It should be noted that because the column of the injection material that forms deposits, injection material can not short circuit source and drain electrode.
If solvent or diffusant are used for wherein the partly soluble at least injection material of organic semiconductor 20 of deposition before, then can cause the part of organic semiconductor and injection material mixed.This is favourable, because by the injection that (graded junction) helps to improve charge carrier of classification junction point is provided.Shown in Figure 1, wherein provide injection zone according to following form usually: the injection material of tubulose and organic semi-conductor mixture 50 are around the central cylindrical object 48 of injection material.For example, be that PAA and organic semiconductor are under the situation of poly-fluorenes at injection material, by PAA is arrived deposition toluene as solution, can realize this mixture.Poly-fluorenes is soluble in toluene and therefore has the mixture of some poly-fluorenes and PAA in the column periphery of injection material.
Then, for example, deposit the insulating barrier with the about 400nm of thickness 22 that forms by polymethyl acrylate, polyimides or polyethylene phenol, the final gate pattern of on insulating barrier, printing as shown in Figure 1 by spin coated on semiconductor layer.
In the present invention, provide injection material as column, described column extends through the whole thickness of function organic semiconductor layer.This column is at one end place contact source electrode 14.At its exhausted source of contact, other end place layer 22.
When in the source with drain when applying electric current between 14 and 16 and grid 24 being applied voltage, form raceway groove 28 (sometimes being called accumulation layer) so in the function organic semiconductor 20 under grid.By column 48, be beneficial to by the injection of 28 charge carrier from the source electrode to the raceway groove shown in the arrow 26.According to the Fermi energy of the material that forms electrode and the relative energy of injection material and function organic semi-conductor top of valence band energy, the energy barrier that injection material must pass through charge carrier is divided into two littler potential barriers.
Thin-film transistor of the present invention is especially favourable, and this is because the column of injection material is beneficial to charge carrier from source electrode 14 direct migrations to the raceway groove 28 that forms under grid 24.Therefore, charge carrier can enter into relatively the organic semiconductor layer near raceway groove.Another advantage of the present invention is, and is bigger in the column 48 and the contact area between the function organic semiconductor layer 28 of injection material, is particularly advantageous in charge carrier and injects from the source electrode to the organic semi-conductor.
Fig. 3 schematically shows the cross section of embodiment of another selection of similar thin-film transistor, and wherein same numbers is used for same components and the element that index and Fig. 1 use.The figure shows the thin-film transistor of a kind of bottom grid/bottom contact.In addition, except Fig. 1 and illustrated in fig. 3, known other the electrode arrangement of those skilled in the art also is possible; Especially top grid/top contact transistor contacts transistor with bottom grid/bottom.
Following example further shows the present invention.
Example
By the source-drain electrodes of photoetching at qualification gold on glass.Each electrode of these electrodes is the rectangle with the long 3.0mm of wide 0.5mm, thick 0.1 μ m.Electrode is by the clearance gap of about 10 μ m.At first, utilize the glass substrate that in ultrasonic electrolytic tank, clean the carrying electrode pattern with acetone, in isopropyl alcohol 15 minutes then, under UV-ozone, exposed 10 minutes at last.The substrate that has pattern of cleaning is transported in the nitrogen drying box, and 100 ℃ of bakings 15 minutes.
Then, constituted the transistor of fundamental type shown in Figure 1, simultaneously substrate has been remained in the nitrogen drying box.At first, from the toluene solution of the poly-fluorenes of 1% weight of 1000rpm, spin coated in 60 seconds deposition as the poly-fluorenes layer of function organic semi-conductor thickness 40nm.On hotplate, toasted 20 minutes then with 60 ℃.
Then, utilize the solvent boring of using dichloro-benzenes, bore a through hole by semiconductor layer.By using the alignment mark of making the known basic fundamental in field as semiconductor device realize holing aligning with respect to source electrode.The about 40 μ m of the diameter of through hole.Simultaneously, form the water diffusion of gluey particle of the PEDOT:PSS of averaged particles with the about 100nm of diameter.Then, utilize ink jet printing head, with this diffusion as continuous droplet ink jet printing with the about 30 μ m of average-size in through hole.Then, being diffused on the hotplate of PEDOT:PSS baked 20 minutes with 60 ℃, extend through the column of the PEDOT:PSS injection material of poly-fluorenes layer thickness with formation.
Form insulating barrier by 8% polyvinylphenol solution in the spin coated isopropyl alcohol with thickness 500nm.Carry out spin coated 60 seconds with 3000prm, afterwards, cut off the source layers 20 minutes with 60 ℃ of oven dry.
Shift out device from nitrogen environment, then, along the source-the leakage gap, two parts of deionized waters that provide from H.C.Starck come print gates than the dilution of a PEDOT:PSS (with 5: 8 ratio).Then, with 50 ℃ of baking results' film transistor device 10 minutes.
Make thin-film transistor relatively in an identical manner, except omitting the institute relevant in steps with the column that forms the polyarylate injection material.
The column that comprises injection material has threshold voltage that reduces device and the effect that increases the source-drain electrode electric current.Typically, threshold voltage reduces 10V, is 3 and utilize the factor of the source-drain electrode current increases that the grid voltage of 30V obtains.
Claims (11)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0419600A GB2418062A (en) | 2004-09-03 | 2004-09-03 | An organic Field-Effect Transistor with a charge transfer injection layer |
| GB0419600.2 | 2004-09-03 |
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| US (1) | US7579620B2 (en) |
| JP (1) | JP4735129B2 (en) |
| KR (1) | KR100780066B1 (en) |
| CN (1) | CN100454601C (en) |
| GB (1) | GB2418062A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101685846A (en) * | 2008-09-01 | 2010-03-31 | 国立大学法人大阪大学 | Organic field effect transistor and its production method |
| US7858513B2 (en) | 2007-06-18 | 2010-12-28 | Organicid, Inc. | Fabrication of self-aligned via holes in polymer thin films |
| CN101256954B (en) * | 2006-12-07 | 2013-01-09 | 三星显示有限公司 | Semiconducting element, organic light emitting display comprising the same, and method of manufacturing the same |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
| US8981348B2 (en) | 2006-12-07 | 2015-03-17 | Samsung Display Co., Ltd. | Semiconducting element, organic light emitting display including the same, and method of manufacturing the semiconducting element |
| DE102007052522A1 (en) * | 2007-11-01 | 2009-05-07 | H.C. Starck Gmbh | Process for coating non-polar polyaromatic-containing layers |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04275436A (en) * | 1991-03-04 | 1992-10-01 | Nec Corp | Soimos transistor |
| DE19712233C2 (en) * | 1996-03-26 | 2003-12-11 | Lg Philips Lcd Co | Liquid crystal display and manufacturing method therefor |
| KR20000038298A (en) * | 1998-12-05 | 2000-07-05 | 구본준 | Image device, sensor thin film transistor and manufacturing method thereof. |
| JP2000269504A (en) | 1999-03-16 | 2000-09-29 | Hitachi Ltd | Semiconductor device, manufacturing method thereof, and liquid crystal display device |
| TW490997B (en) * | 2000-03-31 | 2002-06-11 | Seiko Epson Corp | Method of manufacturing organic EL element, and organic EL element |
| US6734623B1 (en) * | 2000-07-31 | 2004-05-11 | Xerox Corporation | Annealed organic light emitting devices and method of annealing organic light emitting devices |
| KR100746140B1 (en) * | 2000-12-28 | 2007-08-03 | 엘지.필립스 엘시디 주식회사 | Array substrate for liquid crystal display device and manufacturing method thereof |
| TW545080B (en) * | 2000-12-28 | 2003-08-01 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| US6433359B1 (en) * | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
| GB0126757D0 (en) * | 2001-11-07 | 2002-01-02 | Univ Cambridge Tech | Organic field effect transistors |
| JP2003229579A (en) * | 2001-11-28 | 2003-08-15 | Konica Corp | Field effect transistor and manufacturing method therefor |
| ATE525757T1 (en) | 2001-12-19 | 2011-10-15 | Merck Patent Gmbh | ORGANIC FIELD EFFECT TRANSISTOR WITH ORGANIC DIELECTRIC |
| JP4247377B2 (en) * | 2001-12-28 | 2009-04-02 | 独立行政法人産業技術総合研究所 | Thin film transistor and manufacturing method thereof |
| JP4572501B2 (en) * | 2002-02-27 | 2010-11-04 | コニカミノルタホールディングス株式会社 | Method for producing organic thin film transistor |
| US6740900B2 (en) * | 2002-02-27 | 2004-05-25 | Konica Corporation | Organic thin-film transistor and manufacturing method for the same |
| JP4224578B2 (en) * | 2002-03-26 | 2009-02-18 | 独立行政法人産業技術総合研究所 | Organic thin film transistor |
| DE10228772A1 (en) * | 2002-06-27 | 2004-01-15 | Infineon Technologies Ag | Reduction of the contact resistance in organic field effect transistors with palladium contacts by using nitriles and isonitriles |
| JP4618990B2 (en) * | 2002-08-02 | 2011-01-26 | 株式会社半導体エネルギー研究所 | ORGANIC THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE HAVING ORGANIC THIN FILM TRANSISTOR |
| JP2004103905A (en) * | 2002-09-11 | 2004-04-02 | Pioneer Electronic Corp | Organic semiconductor element |
| GB0226010D0 (en) * | 2002-11-08 | 2002-12-18 | Cambridge Display Tech Ltd | Polymers for use in organic electroluminescent devices |
| CN1282260C (en) * | 2003-01-30 | 2006-10-25 | 中国科学院长春应用化学研究所 | Heterojunction-type organic semiconductor field effect transistor containing grid insulating layer and its manufacturing method |
| JP4997688B2 (en) | 2003-08-19 | 2012-08-08 | セイコーエプソン株式会社 | Electrode, thin film transistor, electronic circuit, display device and electronic device |
| US7365360B2 (en) | 2004-05-11 | 2008-04-29 | Lg. Chem, Ltd. | Organic electronic device |
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2004
- 2004-09-03 GB GB0419600A patent/GB2418062A/en not_active Withdrawn
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2005
- 2005-08-22 CN CNB2005100921619A patent/CN100454601C/en not_active Expired - Fee Related
- 2005-08-24 JP JP2005242231A patent/JP4735129B2/en not_active Expired - Fee Related
- 2005-08-25 KR KR1020050078208A patent/KR100780066B1/en not_active IP Right Cessation
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256954B (en) * | 2006-12-07 | 2013-01-09 | 三星显示有限公司 | Semiconducting element, organic light emitting display comprising the same, and method of manufacturing the same |
| US7858513B2 (en) | 2007-06-18 | 2010-12-28 | Organicid, Inc. | Fabrication of self-aligned via holes in polymer thin films |
| CN101330130B (en) * | 2007-06-18 | 2011-02-02 | 惠好公司 | Fabrication of self-aligned via holes in polymer thin films |
| CN101685846A (en) * | 2008-09-01 | 2010-03-31 | 国立大学法人大阪大学 | Organic field effect transistor and its production method |
| CN101685846B (en) * | 2008-09-01 | 2014-05-21 | 国立大学法人大阪大学 | Organic field effect transistor and its production method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100454601C (en) | 2009-01-21 |
| JP4735129B2 (en) | 2011-07-27 |
| KR20060066755A (en) | 2006-06-16 |
| KR100780066B1 (en) | 2007-11-29 |
| GB2418062A (en) | 2006-03-15 |
| US20060049398A1 (en) | 2006-03-09 |
| US7579620B2 (en) | 2009-08-25 |
| JP2006074038A (en) | 2006-03-16 |
| GB0419600D0 (en) | 2004-10-06 |
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