CN1743928A - Fabrication method and structure of top-emission organic light-emitting diode pixel - Google Patents
Fabrication method and structure of top-emission organic light-emitting diode pixel Download PDFInfo
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Abstract
A manufacturing method and structure of up-emitting organic light emitting diode pixel, the manufacturing method comprises the following steps: defining at least two polysilicon islands on a substrate and a doped implant region; sequentially depositing a grid insulation layer and a grid metal layer and defining a grid; carrying out ion implantation to form a doped region; depositing an interlayer dielectric layer and digging a contact hole; and depositing a source/drain metal layer to define a source/drain pattern, wherein the source/drain pattern extends to a pixel region of the top-emission type organic light-emitting diode to serve as a lower electrode of the top-emission type organic light-emitting diode. The structure is characterized in that the lower electrode of the top-emitting organic light-emitting diode is formed by extending the source/drain metal layer of the thin film transistor to the pixel region of the top-emitting organic light-emitting diode.
Description
Technical field
The present invention relates to a kind of manufacture method and structure thereof of organic light-emitting diode pixel, particularly relate to a kind of manufacture method and the structure thereof that can significantly simplify mask manufacture method with the last luminescent organic LED pixel of reduction manufacturing cost.
Background technology
For device around the computer, display is an important output unit, and especially under the compact situation of the external form that requires its peripheral device in recent years, Thin Film Transistor-LCD (TFT-LCD) is widely used thereupon.Yet, in recent years, Organic Light Emitting Diode (OLED) is a kind of novel display technique, it utilizes has different energy bands between different types of organic molecule, when the electronics of different-energy band combines with the hole, having different energy emits, promptly become the light emitting source of different colours, and do not need employed (Back Light) backlight in the general TFT-LCD display, therefore can reduce the overall appearance thickness of display and reduce manufacturing cost, become the rising star on the market.
Yet, present newer Organic Light Emitting Diode technology, has self luminous advantage equally, do not need backlight module (Backlight module) yet, and do not need color filter (Color Filter), have more the many advantages suitable at least, for example: high-contrast (100: 1) with Thin Film Transistor-LCD, scotopia and bright look image quality all fine, can full-colorization and have pliability, can adopt plastic rubber substrate; In addition, also has the Thin Film Transistor-LCD of being better than (TFT-LCD) part, for example: simple in structure, durability is high, cost is low, driving voltage (only 3-9V) is low and power saving, surpass wide visual angle, the brightness height (100cd/m of 160 degree
2), reaction velocity fast (10 μ s) etc.In view of this, for promising display industry, the potentiality of having very much really of Organic Light Emitting Diode display technique also are worth the main technology that develops.
Fig. 1 shows the structural representation of typical organic light-emitting diode pixel.Its ultimate principle is: apply an applying bias V, after making the electron hole pass through hole transmission layer 2000a (Hole Transport Layer) and electron transfer layer 3000a (Electron Transport Layer) respectively, enter an organic luminous layer 4000 with characteristics of luminescence, and within it in conjunction with the time, form one " excitation photon " (exciton) after, energy is discharged and get back to ground state, part is used for being used as the light emitting source of Organic Light Emitting Diode, and remaining 75% is that form with phosphorescence or heat revert to ground state.Because the difference on selected luminescent material energy rank (band gap), the energy that can make this part discharges with the form of the light of different colours, and is formed with the downward luminescence phenomenon that is appeared through glass substrate 1000 by anode 2000ITO (indium tin oxide) of OLED.
Yet Organic Light Emitting Diode is in order to realize high meticulous image quality and more luminous utilization factor, many luminous (top-emitting) types of going up that changed into of its design.Fig. 2 shows the improved structural representation of going up the luminescent organic LED pixel.In last luminescent organic LED, its bottom electrode 1300 becomes reflexible metal level by the ITO (indium tin oxide) of light-permeable, adds organic luminous layer 1400 and top electrode 1200, via luminous on the glass substrate 1100.
Fig. 3 shows complementary metal oxide semiconductor (CMOS) (CMOS) structural representation of the driving organic light-emitting diode pixel of finishing according to nine road masks, it is the U.S. Pat 6 of the disclosed relevant CMOS-TFT manufacture method of Toshiba company, 037,195, the complementary metal oxide semiconductor (CMOS) of the driving organic light-emitting diode pixel of this patent disclosure need adopt nine road masks just can finish.
In addition, Fig. 4 shows the P type thin-film transistor structure synoptic diagram of the driving organic light-emitting diode pixel of finishing according to five road masks, it is the U.S. Pat 6 of the disclosed PMOS-TFT manufacture method of LG, 338,977, the P type thin film transistor (TFT) of the driving organic light-emitting diode pixel of this patent disclosure adopts five road masks just can finish.
No matter being the P type thin film transistor (TFT) or the complementary metal oxide semiconductor (CMOS) of organic light-emitting diode pixel, above prior art all needs a large amount of mask manufacture methods.Yet the people in the industry who is familiar with semiconductor technology knows that reducing mask count is the big invention of one on the manufacture method, even save mask one, cost can significantly reduce.Therefore, these prior aries are wasted production cost significantly, seriously cut down industrial competitiveness.
Therefore, the invention reside in provides a kind of luminescent organic LED pixel manufacture method that goes up, this manufacture method is reduced by at least the twice mask than conventional thin film transistor manufacture method, compares with traditional method for fabricating thin film transistor, can reduce the manufacture method cost significantly.
Another object of the present invention is to provide a kind of luminescent organic LED pixel manufacture method that goes up, transistorized second metal level of its combination film and last luminescent organic LED are applied to the luminescent organic LED display.
A further object of the present invention is to provide a kind of structure that goes up the luminescent organic LED pixel, it can remove the ITO layer that is used to import hole and downward printing opacity, and, also can remove the insulation course that connects between second metal level and the ITO and required contact hole thereof.
According to above-mentioned purpose, the invention provides a kind of luminescent organic LED pixel manufacture method that goes up, wherein with complementary metal oxide semiconductor (CMOS) (CMOS) as driving, may further comprise the steps:
(a) make at least two polysilicon islands and limit N at a ceiling substrate
+Implant the zone;
(b) deposit gate insulator and gate metal layer successively, and limit grid;
(c) carry out N
-Implant, to form the lightly doped drain zone;
(d) only cover the fate of N type element with photoresistance, and expose the fate of P type element, to carry out P
+Mix;
(e) deposit one interlayer dielectric layer, and it is handled to form contact hole; And
(f) deposit source electrode limits the source/drain pattern, and this source/drain metal extends to the pixel region of luminescent organic LED, with the bottom electrode as luminescent organic LED on this.
The present invention also provides a kind of luminescent organic LED pixel manufacture method that goes up, wherein with P type thin film transistor (TFT) as driving, may further comprise the steps:
(a) make at least one polysilicon island and deposit gate insulator and gate metal layer successively at a ceiling substrate, and limit grid;
(b) carry out P
+Mix;
(c) deposit one interlayer dielectric layer, and it is handled to form contact hole;
(d) deposit source electrode limits the source/drain pattern, and this source/drain metal extends to the pixel region of luminescent organic LED, with the bottom electrode as luminescent organic LED on this.
The invention allows for a kind of structure that goes up the luminescent organic LED pixel, it includes:
Thin film transistor (TFT), this transistor is used for driving luminescent organic LED, and described transistor comprises and limits the source/drain metal layer finish one of at least one source/drain pattern;
Last luminescent organic LED, it includes top electrode, organic luminous layer and bottom electrode;
It is characterized in that:
The bottom electrode that should go up luminescent organic LED extends to the pixel region formation of luminescent organic LED on this by the source/drain metal layer of this thin film transistor (TFT).
Description of drawings
Fig. 1 shows the structural representation of a typical organic light-emitting diode pixel;
Fig. 2 shows the improved structural representation of going up the luminescent organic LED pixel;
Fig. 3 shows the CMOS (Complementary Metal Oxide Semiconductor) structure synoptic diagram of the driving organic light-emitting diode pixel that prior art finishes with nine road masks;
Fig. 4 shows the structural representation of the P type thin film transistor (TFT) of the driving organic light-emitting diode pixel that prior art finishes with five road masks;
Fig. 5 A to 5H shows manufacture method and the structural representation with the last luminescent organic LED pixel of P type thin film transistor (TFT) driving according to first embodiment of the invention;
Fig. 6 A to 6H shows manufacture method and the structural representation with the last luminescent organic LED pixel of complementary metal oxide semiconductor (CMOS) driving according to second embodiment of the invention;
Fig. 7 A and 7B show the comparison of the view of the typical organic light-emitting diode pixel of prior art and the above embodiment of the present invention.Wherein Reference numeral is:
1000, the 1100-glass substrate
The 2000-anode
The 2000a-hole injection layer
The 2000b-hole transmission layer
The 3000-negative electrode
The 3000a-electron transfer layer
4000, the 1400-organic luminous layer
The 1200-top electrode
The 1300-bottom electrode
1, the 299-glass substrate
The 2-passive layer
5,301-first insulation course
6-first conductive layer
8-P
+Multi-crystal silicon area
10-N
+Multi-crystal silicon area
11-N
-Multi-crystal silicon area
12,310-second insulation course
13-second conductive layer
The 14-protective seam
The 15-pixel electrode
The 15a-contact hole
300s-source electrode
The 300d-drain electrode
The 303D-drain electrode
The 303S-source electrode
100, the 200-substrate
102, the 202-polysilicon island
103, the 204-gate insulator
104, the 205-gate metal layer
104a, the 205a-grid
102a, 202c-P
+Doped region
105, the 207-interlayer dielectric layer
106, the 208-contact hole
107,209-source/drain pattern
107a, the 209a-bottom electrode
108, the 211-inorganic protective layer
109, the 210-organic luminous layer
110, the 211-top electrode
202a-N
+Doped region
202b-N
-Doped region
The 206-photoresistance
701,704-scans metal wire
702, the 705-data wire lines
703, the 707-pixel electrode
706-second conductive layer
The 708-contact hole
Embodiment
For purpose of the present invention, feature and function being had further understanding, existing accompanying drawings embodiments of the invention.Certainly, the present invention can have multiple different embodiment, has more than to be limited to content described in this instructions.
The present invention relates to a kind of manufacture method and structure that goes up the luminescent organic LED pixel, yet accompanying drawing of the present invention being exemplary explanation, is not to draw according to physical size, fails to reflect the physical size and the characteristics of each level in the structure yet.
Fig. 5 A to 5H shows manufacture method and the structural representation with the last luminescent organic LED pixel of P type thin film transistor (TFT) driving according to first embodiment of the invention;
One substrate 100 at first is provided, deposit passive layer successively 101 and amorphous silicon layer (α-Si), then carry out the manufacture method that general light emitting diodes such as laser annealing (Laser Annealing), semiconductor ion injection (Semiconductor IonImplantation) form polysilicon, carry out steps such as exposure imaging again with first mask, on this substrate 100, limit at least one polysilicon island 102, shown in Fig. 5 A.Wherein, this substrate 100 can be glass, plastic cement, quartz or silicon wafer etc. one of them is planted material and makes.
Then, deposit gate insulator (Gate Insulator) 103 and gate metal layer (Gate) 104 successively on this substrate 100, and limit grid 104a with the second road mask, shown in Fig. 5 C.Wherein gate insulator 103 is a general semiconductor insulating layer material commonly used, as silicon dioxide etc.; And gate metal layer 104 waits one of them kind metal to make by neodymium (Nd), aluminium (Al), chromium (Cr), molybdenum (Mo), copper (Cu).
Next be one of emphasis of the present invention, carry out self-aligned formula (self-alignment) P
+Mix, limit P
+Doped region 102a, dopant are B
2H
6, BF
2 +Deng, shown in Fig. 5 D.
(Inter-Layer Dielectric ILD), and excavates the top of some contact holes 106 to polysilicon island 102 with the 3rd road mask to deposit one interlayer dielectric layer 105.Wherein, the material of this interlayer dielectric layer 105 is as inorganic or organic insulators such as SiOx and SiNx.
Connecing down described is emphasis of the present invention, deposit source/drain metal layer, limit source/drain pattern 107 (Drain/Source) with the 4th road mask again, and this source/drain metal extends to the pixel region of luminescent organic LED in addition, goes up the bottom electrode 107a of luminescent organic LED with direct as this.So far, the P type method of manufacturing thin film transistor of luminescent organic LED pixel is finished in the driving, and only finishes with four road masks, reduces two procedures at least than six road mask process shown in the prior art, greatly reduces the manufacture method difficulty.
Deposit one inorganic protective layer 108 again, and on the subregion of this interlayer dielectric layer 105, limit inorganic protective layer 108, can be used to intercept the infiltration of water and oxygen etc.On the source/drain metal layer of the bottom electrode 107a that follows at luminescent organic LED in this conduct, form organic luminous layer 109 (EML) and top electrode 110 successively.Like this, bottom electrode 107a, organic luminous layer 109, top electrode 110 forms the manufacture method and the structure of a complete last luminescent organic LED pixel.
Wherein, organic luminous layer 109 is formed by the organic light emission layer material of general Organic Light Emitting Diode, as has micromolecule organic dyestuff, Alq2 (blue light), Alq3 (green glow) or the organic polymer material materials such as (as gathering phenylethylene PPV) of high-luminous-efficiency.And because the present invention is last luminescent organic LED, therefore in the selection of top electrode 110, must be the material of light-permeable, so ITO (indium tin oxide), the such metal oxide of IZO (indium-zinc oxide), stable performance and printing opacity have just become best material to select.Because choosing of element material is not emphasis of the present invention, do not repeat them here.
Fig. 6 A to 6H shows pixel manufacture method and the structural representation according to the last luminescent organic LED that drives with complementary metal oxide semiconductor (CMOS) (CMOS) of second embodiment of the invention.
As described in first embodiment, one substrate 200 is provided earlier, deposit passive layer successively 201 and amorphous silicon layer, carry out the manufacture method of general light emitting diode formation such as laser annealing, the implantation of semiconductor ion polysilicon then, carry out steps such as exposure imaging again with first mask, on this substrate 200, limit at least two polysilicon islands 202, as shown in Figure 6A.Wherein, identical with first embodiment, this substrate 200 can be made by one of them kind material such as glass, plastic cement, quartz or silicon wafer.
Shown in Fig. 6 B, utilize the photoresistance 203 and the second road mask on this substrate 200, to limit N
+The implantation region is wherein with V group element such as PH
3, POCl
3Deng one of two polysilicon islands are carried out N
+Implant, to form N
+Doped region 202a (shown in Fig. 6 C).
Then remove photoresistance 203, and on this substrate 200 deposit gate insulator 204 and gate metal layer 205 successively, and limit grid 205a, shown in Fig. 6 D with the 3rd road mask.Wherein gate insulator 204 is made by general semiconductor insulating layer material commonly used, as silicon dioxide etc.; And gate metal layer 205 is made for one of them kind metal such as neodymium, aluminium, chromium, molybdenum, copper.
Next be one of emphasis of the present invention, carry out the N of self-aligned formula
-Implant, to form N
-Doped region 202b, alloy are PH
3Deng, shown in Fig. 6 D.
Expose the presumptive area of P type element then with the 4th road mask, 206 of photoresistances cover N type element fate, and another polysilicon island 202 is carried out P
+Mix, to form P
+Doped region 202c.Clearly, because in this doping process, 206 fates that cover N type element of photoresistance, implant for self-aligned in other zone, so the manufacture method scope is bigger than classic method, also is one of emphasis of the present invention, shown in Fig. 6 E.
Remove photoresistance 206, deposit interlayer dielectric layer 207 (ILD) again, and excavate contact hole 208 to 202 tops, polysilicon island, shown in Fig. 6 F with the 5th road mask.Wherein, the material of this interlayer dielectric layer 207 is as inorganic or organic insulators such as SiOx and SiNx.
Connecing down described is emphasis of the present invention, deposit source/drain metal layer, limit source/drain pattern 209 with the 6th road mask again, and this source/drain metal also extends to the pixel region of luminescent organic LED, goes up the bottom electrode 209a of luminescent organic LED with direct as this.So far, the manufacture method of the cmos tft of luminescent organic LED pixel is finished in the driving, and only finishes with six road masks, reduces three process at least than nine road mask process shown in the prior art, and it is a lot of that whole manufacture method is reduced.
Deposit one inorganic protective layer 212 again, and on the subregion of this interlayer dielectric layer 207, limit inorganic protective layer 212, can be used to intercept the infiltration of water and oxygen etc.On the source/drain metal layer of the bottom electrode 209a that follows at luminescent organic LED in this conduct, form organic luminous layer 210 (EML) and top electrode 211 successively.Like this, bottom electrode 209a, organic luminous layer 210, top electrode 211 forms the manufacture method and the structure of a complete last luminescent organic LED pixel.
Wherein, organic luminous layer 210 is made by the luminous organic material of general Organic Light Emitting Diode, as has micromolecule organic dyestuff, Alq2 (blue light), Alq3 (green glow) or the organic polymer material materials such as (as gathering phenylethylene PPV) of high-luminous-efficiency.And because the present invention is last luminescent organic LED, in the selection of top electrode 211, must be the material of light-permeable therefore, so the such metal oxide of ITO, IZO, stable performance and printing opacity have just become best material to select.
Like this, the serve as reasons source/drain of this thin film transistor (TFT) of manufacture method and structure with luminescent organic LED pixel on P type thin film transistor (TFT) or the CMOS transistor driving that the embodiment of the invention forms, the bottom electrode of wherein going up luminescent organic LED extends to the pixel region formation of luminescent organic LED on this.Like this, can reduce the use of mask in the manufacture method significantly.
In addition, if method proposed by the invention is applied in traditional pixel design, may cause the aperture than the problem (as Fig. 7 A) that descends.Wherein, 701 scanning metal wires and data wire lines 702 are used the first metal layer and the second metal level manufacturing respectively, and data wire lines 702 and pixel electrode 703 are when utilizing second metal level to make simultaneously, must between be separated out a segment distance and to avoid short circuit, so the area of pixel electrode 703 will be restricted.If use the novel pixel design of Fig. 7 B, effective hole diameter enlargement ratio then.Scanning metal wire 704 in this design and data wire lines 705 most of use the first metal layer manufacturings, just when data wire lines 705 is crossed over scanning metal wire 704, just connect and leap from contact hole 708 usefulness second metal level, this pixel electrode 707 that second metal level is formed can be overlapping with data wire lines 705 and scanning metal wire 704, thereby increase the aperture ratio.
Manufacture method and the structure that goes up the luminescent organic LED pixel of the present invention has following at least advantage:
1, method used in the present invention is transistorized second metal level of combination film, i.e. source/drain metal layer and last luminescent organic LED are to be applied to luminescent organic LED.Be used to import the hole and the ITO layer of printing opacity downwards so can remove, and, also can remove the insulation course that connects between second metal level and the ITO and required contact hole.
2, manufacture method and the structure that goes up the luminescent organic LED pixel of the present invention, the method has reduced twice mask at least than conventional thin film transistor manufacture method, compares with traditional method for fabricating thin film transistor, can reduce production costs significantly.
3, the present invention can effectively reduce the manufacture method complexity, or more wiring space is provided in the same units area, thereby can improve wiring density, reduce production costs, improve enterprise competitiveness.
4, manufacture method of the present invention can be understood by those skilled in the art and implement easily, and does not need complicated manufacture method, does not also need significantly to change existing technical equipment, has than the better fiduciary level of prior art.
In sum, manufacture method yield rate height provided by the invention, existing manufacture method difficulty and the low shortcoming of yield rate have been improved effectively, and integral manufacturing method of the present invention easily, cost is very cheap, volume production is high, the progressive that it demonstrates fully purpose of the present invention and has enforcement extremely has industrial utilization.
Certainly; above-mentioned only is preferred embodiment of the present invention; be not in order to limit practical range of the present invention; any person skilled in art of being familiar with is in the modification of making without prejudice to spirit of the present invention; all belong to scope of the present invention; therefore, protection scope of the present invention with following claim as foundation.
Claims (17)
1, a kind of pixel manufacture method that goes up luminescent organic LED, wherein with complementary metal oxide semiconductor (CMOS) CMOS as driving, it is characterized in that this method comprises the steps:
(a) provide a substrate, make at least two polysilicon islands at this ceiling substrate;
(b) make N at this ceiling substrate
+Implant the zone;
(c) deposit gate insulator and gate metal layer successively, and limit grid;
(d) carry out N
-Implant, to form lightly doped drain LDD zone;
(e) cover the fate of N type element with photoresistance, and expose the fate of P type element, to carry out P
+Mix;
(f) deposit interlayer dielectric layer, and excavate contact hole; And
(g) deposit source/drain metal layer limits the source/drain pattern, and this source/drain metal extends to the pixel region of luminescent organic LED, with as the bottom electrode that should go up luminescent organic LED.
2, according to the described pixel manufacture method that goes up luminescent organic LED of claim 1, it is characterized in that, also can further comprise a step (h) afterwards in step (g):
On the source/drain metal layer of luminescent organic LED bottom electrode in this conduct, form organic luminous layer and top electrode successively.
3, according to the described pixel manufacture method that goes up luminescent organic LED of claim 1, it is characterized in that, also can comprise a step (g1) afterwards in step (g):
On this part interlayer dielectric layer, form the passive protection layer.
4, according to the described pixel manufacture method that goes up luminescent organic LED of claim 1, it is characterized in that, at the described execution N of step (d)
-Implant and form the N of lightly doped drain zone by the self-aligned formula
-Implantation is finished.
According to the described pixel manufacture method that goes up luminescent organic LED of claim 1, it is characterized in that 5, in step (e), implant for self-aligned in other zone that covers N type element presumptive area at photoresistance.
6, according to the described pixel manufacture method that goes up luminescent organic LED of claim 1, it is characterized in that described substrate is by a kind of the making in glass, plastic cement, quartz or the silicon wafer.
According to the described pixel manufacture method that goes up luminescent organic LED of claim 1, it is characterized in that 7, described gate metal layer is made by one of them kind metal such as aluminium, chromium, molybdenum, copper.
According to the described pixel manufacture method that goes up luminescent organic LED of claim 1, it is characterized in that 8, described source/drain metal is made by one of them kind metal such as aluminium, chromium, molybdenum, copper.
9, a kind of pixel manufacture method that goes up luminescent organic LED, wherein with P type thin film transistor (TFT) as driving, it is characterized in that this method comprises the steps:
(a) provide a substrate, make at least one polysilicon island at this ceiling substrate;
(b) deposit gate insulator and gate metal layer successively, and limit grid:
(c) carry out P
+Mix;
(d) deposit interlayer dielectric layer, and excavate contact hole;
(e) deposit source/drain metal layer limits the source/drain pattern, and this source/drain metal extends to the pixel region of luminescent organic LED, with as the bottom electrode that should go up luminescent organic LED.
10, according to the described luminescent organic LED pixel manufacture method that goes up of claim 9, it is characterized in that, also can further comprise a step (f) afterwards in step (e):
On the source/drain metal layer of luminescent organic LED bottom electrode in this conduct, form organic luminous layer and top electrode successively.
11, according to the described pixel manufacture method that goes up luminescent organic LED of claim 9, it is characterized in that, also can comprise a step (e1) afterwards in step (e):
On the subregion of this interlayer dielectric layer, form the passive protection layer.
12, according to the described pixel manufacture method that goes up luminescent organic LED of claim 9, it is characterized in that, at the described P that carries out of step (c)
+Mix by the P of self-aligned formula
+Implantation is finished.
13, according to the described pixel manufacture method that goes up luminescent organic LED of claim 9, it is characterized in that described substrate is by a kind of the making in glass, plastic cement, quartz or the silicon wafer.
According to the described pixel manufacture method that goes up luminescent organic LED of claim 9, it is characterized in that 14, described gate metal layer is made by one of them kind metal such as aluminium, chromium, molybdenum, copper.
According to the described pixel manufacture method that goes up luminescent organic LED of claim 9, it is characterized in that 15, described source/drain metal is made by one of them kind metal such as aluminium, chromium, molybdenum, copper.
16, a kind of structure that goes up the luminescent organic LED pixel is characterized in that, includes:
One thin film transistor (TFT), this transistor is used for driving luminescent organic LED, and described transistor includes and limits the source/drain metal layer of one of source pattern at least;
Luminescent organic LED on one, it comprises top electrode, organic luminous layer and bottom electrode;
It is characterized in that:
The bottom electrode that should go up luminescent organic LED extends to the pixel region formation of luminescent organic LED by the source/drain metal layer of this thin film transistor (TFT).
According to the structure of the last luminescent organic LED pixel shown in the claim 16, it is characterized in that 17, described source/drain metal is made by one of them kind metal such as aluminium, chromium, molybdenum, copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100572740A CN1743928A (en) | 2004-08-30 | 2004-08-30 | Fabrication method and structure of top-emission organic light-emitting diode pixel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100572740A CN1743928A (en) | 2004-08-30 | 2004-08-30 | Fabrication method and structure of top-emission organic light-emitting diode pixel |
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| CNA2004100572740A Pending CN1743928A (en) | 2004-08-30 | 2004-08-30 | Fabrication method and structure of top-emission organic light-emitting diode pixel |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101330130B (en) * | 2007-06-18 | 2011-02-02 | 惠好公司 | Fabrication of self-aligned via holes in polymer thin films |
| CN101996989A (en) * | 2009-08-07 | 2011-03-30 | 株式会社半导体能源研究所 | Light-emitting device and manufacturing method thereof |
| CN101325209B (en) * | 2007-06-14 | 2011-10-19 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same |
| CN107706209A (en) * | 2017-08-09 | 2018-02-16 | 武汉华星光电半导体显示技术有限公司 | Organic EL display panel and preparation method thereof |
-
2004
- 2004-08-30 CN CNA2004100572740A patent/CN1743928A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101325209B (en) * | 2007-06-14 | 2011-10-19 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same |
| CN101330130B (en) * | 2007-06-18 | 2011-02-02 | 惠好公司 | Fabrication of self-aligned via holes in polymer thin films |
| CN101996989A (en) * | 2009-08-07 | 2011-03-30 | 株式会社半导体能源研究所 | Light-emitting device and manufacturing method thereof |
| CN107706209A (en) * | 2017-08-09 | 2018-02-16 | 武汉华星光电半导体显示技术有限公司 | Organic EL display panel and preparation method thereof |
| WO2019028955A1 (en) * | 2017-08-09 | 2019-02-14 | 武汉华星光电半导体显示技术有限公司 | Organic electroluminescent display panel and method for manufacturing same |
| CN107706209B (en) * | 2017-08-09 | 2019-06-25 | 武汉华星光电半导体显示技术有限公司 | Organic electroluminescent display panel and preparation method thereof |
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