CN101060130A - Active organic light emitting diode display device and manufacturing method thereof - Google Patents

Abstract

A method for manufacturing an active organic light emitting diode display device. First, a substrate is provided. Then, an element layer is formed on the substrate, wherein the element layer is provided with a plurality of active elements. Next, a planarization layer is formed on the element layer. Then, a first, a second and a third color filter layers are formed on the planarization layer, which define a first, a second and a third pixel regions, respectively, and can be used as an etching mask for etching the planarization layer to expose a portion of the active device. Then, a first, a second and a third pixel electrode are formed in the first, the second and the third pixel regions, respectively, and electrically connected to the active element. And forming first, second and third organic light emitting material layers on the first, second and third pixel electrodes, respectively. The manufacturing method can simplify the process and reduce the manufacturing cost.

Description

Active organic light emitting diode display device and manufacturing method thereof

technical field

The present invention relates to a kind of manufacturing method and structure of Active Matrix Organic Light Emitting Diode Display Device (Active Matrix Organic Light Emitting Diode Display Device, AMOLED display device), and particularly relates to a half-tone photolithographic mask (half-tone) A method for manufacturing an active organic light-emitting diode display device for manufacturing a color filter layer (color filter layer) and a structure thereof.

Background technique

Organic Light Emitting Diode (OLED) is a semiconductor element that can convert electrical energy into light energy and has high conversion efficiency. Common uses are light-emitting elements for indicator lights, display panels, and optical read-write heads. Because organic light-emitting diodes have the characteristics of no viewing angle, simple process, low cost, high response speed, wide temperature range and full color, and meet the requirements of display characteristics in the multimedia era, they have become a research boom in recent years.

Based on the above, an Active Matrix Organic Light Emitting Diode display device (ActiveMatrix Organic Light Emitting Diode) using a color filter onarray (hereinafter referred to as COA) on the array substrate has also been proposed. Regarding its manufacturing method and structure Many scholars have put forward relevant researches. FIGS. 1A to 1F are schematic cross-sectional views of the steps of manufacturing an active organic light emitting diode display device with a COA structure in the prior art.

Referring to FIG. 1A , firstly, a substrate 100 is provided, on which an element layer 110 has been formed. The device layer 110 has a plurality of thin film transistors 120 (only one is shown in the figure), a plurality of scanning lines (not shown) and a plurality of data lines (not shown), and the thin film transistors 120 are connected by scanning lines and data Driven by line.

Please continue to refer to FIG. 1A, each thin film transistor 120 includes a silicon island 121 (silicon island), a gate insulating layer 122 (gate-insulating layer), a gate 123 (gate), a source 124a/drain 124b (source/ drain), an inter-layer dielectric layer 125 (inter-layer dielectric, ILD), and a source/drain contact metal 126 (source/drain contact metal). It should be noted that the interlayer dielectric layer 125 has an opening 125 a exposing the source 124 a/drain 124 b (source/drain) of the thin film transistor 120 . Moreover, the source/drain contact metal 126 is electrically connected to the source 124a/drain 124b, and the source/drain contact metal 126 is used to connect the thin film transistor 120 with the subsequently formed transparent conductive layer 150 (transparent conductive layer) electrical connection.

Next, referring to FIG. 1B , the interlayer dielectric layer 125 is used as a buffer layer to manufacture a color filter array layer, that is, to form the above-mentioned COA structure. It goes through three steps of coating color photoresist, exposing and developing to form a red filter layer 130, a green filter layer (not shown in the figure) and a blue filter layer on the interlayer dielectric layer 125 respectively. (not shown in the figure). In particular, the positions of the red filter layer 130 , the green filter layer and the blue filter layer correspond to the positions of the subsequently formed pixel area 162 (pixel area).

Next, referring to FIG. 1C , a flat layer 140 is continuously formed on the substrate 100 to cover the red filter layer 130 , the green filter layer and the blue filter layer. Then, the flat layer 140 is patterned to form a contact opening 142 , and the contact opening 142 exposes the source/drain contact metal 126 .

Next, please refer to FIG. 1D , a transparent conductive layer 150 is formed on the planarization layer 140 , and the transparent conductive layer 150 is electrically connected to the source/drain contact metal 126 through the contact window opening 142 .

Next, please refer to FIG. 1E , a pixel defining layer 160 (pixel defining layer) is formed on the transparent conductive layer 150, and the pixel defining layer 160 defines a plurality of pixel areas 162 (pixel area). The pixel definition layer 160 is formed by coating an organic photoresist, followed by exposure and development, or by plating an inorganic material layer, followed by photolithography and etching.

After that, referring to FIG. 1F , an organic light emitting material layer 170 is formed in each pixel area 162 , and the manufacture of the active organic light emitting diode display device 200 is completed. A voltage is applied to the transparent conductive layer 150 through the switching action of the thin film transistor 120 , so that the organic light emitting material layer 170 emits light. Moreover, the light emitted by the organic luminescent material layer 170 will pass through the color filter array layer (the red filter layer 130 shown in the figure) to form colored light.

It is worth noting that to manufacture the active organic light emitting diode display device 200 with a COA structure, it needs to go through three steps of coating color photoresist, exposing and developing respectively during the step of manufacturing the color filter array layer. In addition, in order to electrically connect the thin film transistor 120 to the transparent conductive layer 150 , another patterning process is used to form the contact opening 142 in the planar layer 140 . Afterwards, the pixel definition layer 170 must be formed to define each pixel area 162 before the organic light-emitting material layer 170 can be coated on the pixel area 162. In particular, the formation of the pixel definition layer 170 requires another process of film formation and patterning. craft.

As a result, the known manufacturing method of the active organic light emitting diode display device 200 having a COA structure will be very complicated in terms of process steps, and the above-mentioned manufacturing method is not easy to reduce the manufacturing cost.

Contents of the invention

In view of this, the object of the present invention is to provide a method for manufacturing an active organic light emitting diode display device, so as to simplify the process and reduce the manufacturing cost.

Another object of the present invention is to provide an active organic light emitting diode display device, which is manufactured by using the above-mentioned method for manufacturing an active organic light emitting diode display device, so that the production capacity can be improved.

To achieve the above or other objectives, the present invention provides a method for manufacturing an active organic light emitting diode display device, which includes the following steps. First, a substrate is provided. Next, an element layer is formed on the substrate, and the element layer has a plurality of active elements. Next, a planarization layer is formed on the element layer. Then, a first colored photoresist layer is formed on the flat layer. Afterwards, the first color photoresist layer is patterned to form a first color filter layer, and a first pixel area is defined, and the first color filter layer has a first opening. Next, a second colored photoresist layer is formed on the flat layer. Next, the second color photoresist layer is patterned to form a second color filter layer, and a second pixel area is defined, and the second color filter layer has a second opening. Then, a third colored photoresist layer is formed on the flat layer. After that, the third color photoresist layer is patterned to form a third color filter layer, and a third pixel area is defined, and the third color filter layer has a third opening. Then, using the first, second and third color filter layers as masks, removing the planar layer under the first, second and third openings to form a plurality of contact window openings to expose part of the active elements. Furthermore, the first, second and third pixel electrodes are respectively formed in the first, second and third pixel regions, and the first, second and third pixel electrodes are respectively connected to the active element electrodes through these contact window openings. connect. Afterwards, first, second and third organic light-emitting material layers are respectively formed on the first, second and third pixel electrodes.

In one embodiment of the present invention, the above-mentioned method for patterning the first, second and third colored photoresist layers includes using a semi-transparent photolithographic mask as a mask to pattern the first, second and third colored photoresist layers respectively. The third color photoresist layer.

In one embodiment of the present invention, the first color filter layer is a red filter layer, the second color filter layer is a green filter layer, and the third color filter layer is a blue filter layer.

In an embodiment of the present invention, the compositions of the above-mentioned first, second and third organic light-emitting material layers are different.

In an embodiment of the present invention, the above-mentioned first, second and third organic light-emitting material layers have the same composition.

To achieve the above or other objectives, the present invention further proposes an active organic light emitting diode display device, which includes a substrate, an element layer, a flat layer, a first, a second and a third color filter layer, a first, a first The second and third pixel electrodes, and the first, second and third organic luminescent material layers. The element layer is disposed on the substrate, and the element layer has a plurality of active elements. The planar layer is disposed on the element layer, and the planar layer has a plurality of contact window openings respectively exposing part of the above active elements. The first color filter layer is disposed on the flat layer, wherein the first color filter layer has a first pixel area and a first opening, and the first opening is located above a part of the contact window opening. The second color filter layer is disposed on the planar layer, wherein the second color filter layer has a second pixel area and a second opening, and the second opening is located above a portion of the contact window opening. The third color filter layer is disposed on the planar layer, wherein the third color filter layer has a third pixel area and a third opening, and the third opening is located above a part of the opening of the contact window. The first, second and third pixel electrodes are respectively arranged in the first, second and third pixel regions, and the first, second and third pixel electrodes respectively pass through the first, second and third openings and the contact window The opening is electrically connected to the active element. The first, second and third organic luminescent material layers are respectively arranged on the first, second and third pixel electrodes.

In one embodiment of the present invention, the first color filter layer is a red filter layer, the second color filter layer is a green filter layer, and the third color filter layer is a blue filter layer.

In an embodiment of the present invention, the compositions of the above-mentioned first, second and third organic light-emitting material layers are different.

In an embodiment of the present invention, the above-mentioned first, second and third organic light-emitting material layers have the same composition.

In one embodiment of the present invention, the above-mentioned active element includes a thin film transistor, wherein each thin film transistor includes a silicon island, a gate insulating layer, a gate, a source/drain, an interlayer dielectric layer, and a source /drain contact metal. The silicon islands are disposed on the substrate. A gate insulating layer covers the silicon islands. The gate is disposed on the gate insulating layer above the silicon island. The source/drain are arranged in the silicon islands below the two sides of the gate, and the channel region is between the source/drain. The interlayer dielectric layer covers the gate, and part of the source/drain is exposed by the interlayer dielectric layer. The source/drain contact metals are electrically connected to the source/drain, respectively.

In the present invention, the first, second and third color photoresist layers are patterned by using a semi-transparent photolithographic mask, so that the formed first, second and third color filter layers can be used as pixel definition layers, and Can be used as an etch mask to create contact openings. Therefore, the manufacturing method of the present invention can reduce the manufacturing steps of the pixel definition layer and the etching mask for manufacturing the contact window opening, thereby simplifying the process and reducing the cost.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are specifically cited below and described in detail with accompanying drawings.

Description of drawings

FIGS. 1A to 1F are schematic cross-sectional views of the steps of manufacturing an active organic light emitting diode display device with a COA structure in the prior art.

2A to 2H are cross-sectional schematic diagrams showing the steps of a method for manufacturing an active organic light emitting diode display device in a preferred embodiment of the present invention.

FIG. 3 is a schematic cross-sectional view of an active organic light emitting diode display device in a preferred embodiment of the present invention.

Description of main component marking

100, 300, 410: Substrate

110, 310, 420: component layer

120: thin film transistor

121, 471: Silicon islands

122, 472: gate insulating layer

123, 473: grid

124a, 474a: source

124b, 474b: drain

125, 475: interlayer dielectric layer

126, 476: Source/drain contact metal

130: Red filter layer

140, 330, 430: flat layer

142, 330a, 430a: contact window openings

150: transparent conductive layer

160: Pixel definition layer

170: organic luminescent material layer

200, 400: active organic light emitting diode display device

320, 470: active components

340: first color photoresist layer

340', 442: the first color filter layer

340'a, 442a: first pixel area

340'b, 442b: first opening

350: semi-transparent photolithography mask

352: Exposure Area

354: semi-transparent area

356: shading area

360, 444: Second color filter layer

360a, 444a: the second pixel area

360b, 444b: second opening

370, 446: the third color filter layer

370a, 446a: the third pixel area

370b, 446b: third opening

380a, 452: first pixel electrodes

380b, 454: the second pixel electrode

380c, 456: the third pixel electrode

392, 462: the first organic light-emitting material layer

394, 464: second organic light-emitting material layer

396, 466: the third organic light-emitting material layer

480: shallowly doped drain region

Detailed ways

2A to 2H are cross-sectional schematic diagrams showing the steps of a method for manufacturing an active organic light emitting diode display device in a preferred embodiment of the present invention. Please refer to FIG. 2A to FIG. 2H at the same time.

First, a substrate 300 is provided, as shown in FIG. 2A . The substrate 300 can be a glass substrate, a quartz substrate or a flexible substrate. Please continue to refer to FIG. 2A , again, an element layer 310 is formed on the substrate 300 , and the element layer 310 has a plurality of active elements 320 (only one is shown in the figure). In an embodiment of the present invention, the active element 320 is, for example, a thin film transistor. Moreover, the device layer 310 has a plurality of scan lines (not shown in the figure) and a plurality of data lines (not shown in the figure), and the active device 320 is driven by the scan lines and the data lines. The method of forming the device layer 310 is, for example, using a common semiconductor process, which will not be described in detail here.

Next, a planarization layer 330 is formed on the device layer 310, as shown in FIG. 2B. In one embodiment, the method of forming the planar layer 330 is, for example, chemical vapor deposition (CVD), and the material of the planar layer 330 is, for example, silicon oxide, silicon nitride or silicon oxynitride.

Next, a first colored photoresist layer 340 is formed on the flat layer 330, as shown in FIG. 2C. In one embodiment, the method for forming the first colored photoresist layer 340 includes spin coating or evaporation, and the material of the first colored photoresist layer 340 is organic high molecular material.

After that, the first color photoresist layer 340 is patterned to form a first color filter layer 340', and a first pixel region 340'a is defined, and the first color filter layer 340' has a first opening 340'b , as shown in Figure 2D. In one embodiment, the method for patterning the first colored photoresist layer 340 is to pattern the first colored photoresist layer 340 by using the semi-transparent photolithography mask 350 as a mask.

Please continue to refer to FIG. 2D , the semi-transparent photolithographic mask 350 has, for example, an exposure area 352 , a semi-transparent area 354 and a light-shielding area 356 . Also, the first colored photoresist layer 340 may be a negative type photoresist or a positive type photoresist. When the first color photoresist layer 340 is a negative photoresist, after using the semi-transparent photoresist mask 350 to carry out the photolithography process (photolithography) on the first color photoresist layer 340, the exposure area 352 corresponds to The first colored photoresist layer 340 will remain; the first colored photoresist layer 340 corresponding to the semi-transparent region 354 will be partially removed to form a first pixel region 340'a; the corresponding light-shielding region 356 The first color photoresist layer 340 is completely removed to form the first opening 340b', thus obtaining the first color filter layer 340'. Of course, more than two photolithography masks with different exposure energies can also be used to expose the first color photoresist layer 340 to form the first color filter layer 340' as shown in FIG. 2D.

Next, repeat the steps of FIG. 2C and FIG. 2D to form a second color photoresist layer (not shown in the figure) on the planar layer 330, and use a semi-transparent photolithographic mask 350 to pattern the second color photoresist layer And form the second color filter layer 360; The photoresist layer is used to form the third color filter layer 370, and finally the COA structure as shown in FIG. 2E can be obtained. Similarly, a second pixel area 360a is defined in the second color filter layer 360, and the second color filter layer 360 has a second opening 360b, and a third pixel area 370a is defined in the third color filter layer 370, And the third color filter layer 370 has a third opening 370b. In one embodiment, the first color filter layer 340' may be a red filter layer, the second color filter layer 360 may be a green filter layer, and the third color filter layer 370 may be a blue filter layer. , which together constitute a color filter array layer.

It is worth noting that the first, second and third color filter layers 340 ′, 360 , and 370 formed by using the semi-transparent photolithographic mask 350 in conjunction with photoresist, exposure, and development steps not only have In addition to the function of light filtering, it can also be used as a pixel definition layer to define a plurality of first, second and third pixel areas 340'a, 360a, 370a.

Next, using the first, second and third color filter layers 340', 360, 370 as masks, removing the flat layer 330 below the first, second and third openings 340'b, 360b, 370b to form A plurality of contact window openings 330a, these contact window openings 330a expose part of the active device 320, as shown in FIG. 2F. In one embodiment, the method for removing the flat layer 330 may be dry etching or wet etching.

It should be noted that since the first, second and third color filter layers 340', 360, 370 have first, second and third openings 340'b, 360b, 370b, they can be used as manufacturing contact window openings. 330a of the etch mask. As a result, compared with the step of FIG. 1C in the prior art, the present invention can reduce the fabrication of one patterned photoresist layer for forming the contact opening 330a, so the fabrication steps of the present invention are simpler.

Next, first, second and third pixel electrodes 380a, 380b, 380c are respectively formed in the first, second and third pixel regions 340'a, 360a, 370a, and the first, second and third pixel electrodes 380a, 380b, 380c are respectively electrically connected to the active element 320 through the contact window opening 330a, as shown in FIG. 2G. In one embodiment, the method of forming the first, second and third pixel electrodes 380a, 380b, 380c is, for example, to first form a transparent conductive layer (not shown in the figure) on the substrate 300 by sputtering. The material of the transparent conductive layer is, for example, indium tin oxide (Indium Tin Oxide, ITO) or indium zinc oxide (Indium Zinc Oxide, IZO). Next, the transparent conductive layer is patterned to form the first, second and third pixel electrodes 380a, 380b, 380c.

After that, first, second and third organic light-emitting material layers 392, 394, 396 are formed on the first, second and third pixel electrodes 380a, 380b, 380c respectively, as shown in FIG. 2H. In one embodiment, the method of forming the first, second and third organic light-emitting material layers 392 , 394 , 396 may be evaporation.

Referring to FIG. 2H , it is worth noting that the compositions of the first, second and third organic light-emitting material layers 392 , 394 , and 396 are different, that is, the colors may be different. And the first, second and third organic luminescent material layers 392, 394, 396 may be arranged corresponding to the colors of the first, second and third color filter layers 340', 360, 370. In one embodiment, the first organic light emitting material layer 392 is a red organic light emitting material layer, the second organic light emitting material layer 394 is a green organic light emitting material layer, and the third organic light emitting material layer 396 is a blue organic light emitting material layer, In this way, better color saturation can be achieved.

In addition, in another embodiment, the composition of the first, second and third organic luminescent material layers 392, 394, 396 is the same, that is, the colors may be the same, and the first, second and third organic luminescent material layers 392 , 394 , and 396 may all be white organic luminescent material layers, or organic luminescent material layers of other colors. In this way, the process can be simplified and the manufacturing cost can be reduced.

In summary, since the semi-transparent photolithography mask is used to pattern the first, second and third color photoresist layers, the formed first, second and third color filter layers can be As a pixel definition layer and as an etch mask for making contact openings. In this way, compared with the prior art, the present invention can reduce the manufacturing steps of the pixel definition layer and the etching mask used to manufacture the contact window opening, thereby simplifying the process and reducing the cost.

FIG. 3 is a schematic cross-sectional view of an active organic light emitting diode display device in a preferred embodiment of the present invention. The active OLED display device 400 includes a substrate 410, an element layer 420, a flat layer 430, first, second and third color filter layers 442, 444, 446, first, second and third pixel electrodes 452, 454, 456, and first, second and third organic light-emitting material layers 462, 464, 466.

Please continue to refer to FIG. 3 , the device layer 420 is disposed on the substrate 410 , and the device layer 420 has a plurality of active devices 470 . In an embodiment, the device layer 420 may further include a plurality of scan lines (not shown in the figure) and a plurality of data lines (not shown in the figure), and the active device 470 is driven by the scan lines and the data lines. In addition, the active element 470 may be a thin film transistor. In one embodiment, each TFT may include a silicon island 471, a gate insulating layer 472, a gate 473, a source 474a/drain 474b, an interlayer dielectric 475, and a source/drain contact metal 476. Wherein, the silicon island 471 is disposed on the substrate 410 . The gate insulating layer 472 covers the silicon island 471 . The gate 473 is disposed on the gate insulating layer 472 above the silicon island 471 . The source 474a/drain 474b are disposed in the silicon island 471 below the two sides of the gate 473, and the channel region 474c is between the source 474a/drain 474b. The interlayer dielectric layer 475 covers the gate 473 , and the interlayer dielectric layer 475 exposes a part of the source electrode 474a/drain electrode 474b. The source/drain contact metal 476 is electrically connected to the source 474a/drain 474b, respectively. In addition, there may be a lightly doped drain region 480 (lightly doped drain, LDD) between the channel region 474c and the source 474a/drain 474b.

The planar layer 430 is disposed on the device layer 420 , and the planar layer 430 has a plurality of contact window openings 430 a respectively exposing a part of the active device 470 . In an embodiment, the material of the flat layer 430 may be silicon oxide, silicon nitride or silicon oxynitride.

The first color filter layer 442 is disposed on the planar layer 430 , wherein the first color filter layer 442 has a first pixel region 442 a and a first opening 442 b, and the first opening 442 b is located above a portion of the contact window opening 430 a. The second color filter layer 444 is disposed on the planar layer 430 , wherein the second color filter layer 444 has a second pixel region 444 a and a second opening 444 b, and the second opening 444 b is located above a portion of the contact window opening 430 a. The third color filter layer 446 is disposed on the flat layer 430 , wherein the third color filter layer 446 has a third pixel region 446 a and a third opening 446 b, and the third opening 446 b is located above a part of the contact window opening 430 a.

In one embodiment, the first color filter layer 442 is a red filter layer, the second color filter layer 444 is a green filter layer, and the third color filter layer 446 is a blue filter layer. It should be noted that Yes, the first, second and third color filter layers 442, 444, 446 form a color filter array layer, which not only has the function of filtering, but also functions as a pixel definition layer, and can define a plurality of color filter array layers. 1. The second and third pixel areas 442a, 444a, 446a. Also, the color filter array layer can also be used as an etching mask for forming the contact window opening 430a.

Please continue to refer to FIG. 3, the first, second and third pixel electrodes 452, 454, 456 are respectively disposed in the first, second and third pixel regions 442a, 444a, 446a, and the first, second and third The pixel electrodes 452, 454, 456 are electrically connected to the active element 470 through the first, second and third openings 442b, 444b, 446b and the contact opening 430a, respectively. In one embodiment, the material of the first, second and third pixel electrodes 452 , 454 , 456 may be indium tin oxide or indium zinc oxide.

The first, second and third organic light-emitting material layers 462 , 464 and 466 are respectively disposed on the first, second and third pixel electrodes 452 , 454 and 456 . In one embodiment, the compositions of the first, second and third organic light-emitting material layers 462 , 464 , 466 are different, that is, the colors may be different. For example, the first organic light emitting material layer 462 is a red organic light emitting material layer, the second organic light emitting material layer 464 is a green organic light emitting material layer, and the third organic light emitting material layer 466 is a blue organic light emitting material layer. In this way, better color saturation can be obtained.

In another embodiment, the composition of the first, second and third organic light-emitting material layers 462 , 464 , 466 is the same, that is, the colors may be the same. For example, the first, second and third organic light emitting material layers 462 , 464 , 466 are all white light organic light emitting material layers. In this way, the white light organic light-emitting material layer of the same color can be vapor-deposited on the entire surface, thereby reducing the manufacturing cost.

To sum up, the manufacturing method and structure of the active organic light emitting diode display device of the present invention have the following advantages:

(1) The present invention can reduce the manufacturing steps of the pixel definition layer and the manufacturing steps of the etching mask used to make the contact window opening. Therefore, the process of the present invention is relatively simple, and the manufacturing cost can be reduced.

(2) The color saturation of the present invention can be improved by using the combination of organic luminescent material layers of different colors and the color filter layer.

(3) The present invention can also only use organic luminescent material layers of the same color, thereby reducing the manufacturing cost.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the claims.

Claims (11)

1. the manufacture method of an active organic LED display device is characterized in that comprising:

Substrate is provided;

Form element layer on this substrate, this element layer has a plurality of active elements;

On this element layer, form flatness layer;

On this flatness layer, form the first colored photoresist layer;

This first colored photoresist layer of patterning and form first chromatic filter layer, and define first pixel region, and this first chromatic filter layer has first opening;

On this flatness layer, form the second colored photoresist layer;

This second colored photoresist layer of patterning and form second chromatic filter layer, and define second pixel region, and this second chromatic filter layer has second opening;

On this flatness layer, form the 3rd colored photoresist layer;

Patterning the 3rd colored photoresist layer and form the 3rd chromatic filter layer, and define the 3rd pixel region, and the 3rd chromatic filter layer has the 3rd opening;

With this first, second and the 3rd chromatic filter layer be mask, remove this first, second and this flatness layer of the 3rd opening below and form a plurality of contact windows, to expose above-mentioned these active elements of part;

This first, second and the 3rd pixel region in form first, second and the 3rd pixel electrode respectively, and this first, second be electrically connected with above-mentioned these active elements by above-mentioned these contact windows respectively with the 3rd pixel electrode; And

Respectively this first, second and the 3rd pixel electrode on form first, second and the 3rd luminous organic material layer.

2. the manufacture method of active organic LED display device according to claim 1, the method that it is characterized in that patterning this first, second and the 3rd colored photoresist layer comprises that with semi-transparent photo etched mask be mask, respectively patterning this first, second and the 3rd colored photoresist layer.

3. the manufacture method of active organic LED display device according to claim 1 is characterized in that this first chromatic filter layer is a red filter layer, and this second chromatic filter layer is green filter layer, and the 3rd chromatic filter layer is a blue color filter layer.

4. the manufacture method of active organic LED display device according to claim 1, it is characterized in that this first, second different with the 3rd luminous organic material layer composition.

5. the manufacture method of active organic LED display device according to claim 1, it is characterized in that this first, second identical with the 3rd luminous organic material layer composition.

6. active organic LED display device is characterized in that comprising:

Substrate;

Element layer be arranged on this substrate, and this element layer has a plurality of active elements;

Flatness layer is arranged on this element layer, and this flatness layer has a plurality of contact windows and exposes above-mentioned these active elements of part respectively;

First chromatic filter layer is arranged on this flatness layer, and wherein this first chromatic filter layer has first pixel region and first opening, and this first opening is positioned at the top of above-mentioned these contact windows of part;

Second chromatic filter layer is arranged on this flatness layer, and wherein this second chromatic filter layer has second pixel region and second opening, and this second opening is positioned at the top of above-mentioned these contact windows of part;

The 3rd chromatic filter layer is arranged on this flatness layer, and wherein the 3rd chromatic filter layer has the 3rd pixel region and the 3rd opening, and the 3rd opening is positioned at the top of above-mentioned these contact windows of part;

First, second and the 3rd pixel electrode, be arranged at respectively this first, second and the 3rd pixel region in, and this first, second be electrically connected with above-mentioned these active elements with the 3rd opening and above-mentioned these contact windows by this first, second respectively with the 3rd pixel electrode; And

First, second and the 3rd luminous organic material layer, be arranged at respectively this first, second and the 3rd pixel electrode on.

7. active organic LED display device according to claim 6 is characterized in that this first chromatic filter layer is a red filter layer, and this second chromatic filter layer is green filter layer, and the 3rd chromatic filter layer is a blue color filter layer.

8. active organic LED display device according to claim 6, it is characterized in that this first, second different with the 3rd luminous organic material layer composition.

9. active organic LED display device according to claim 6, it is characterized in that this first, second identical with the 3rd luminous organic material layer composition.

10. active organic LED display device according to claim 6 is characterized in that above-mentioned these active elements comprise thin-film transistor.

11. active organic LED display device according to claim 10 is characterized in that each thin-film transistor comprises:

The silicon island is arranged on this substrate;

Gate insulation layer covers this silicon island;

Grid is arranged on this gate insulation layer of this silicon island top;

Source/drain is arranged in this silicon island of this grid down either side, and is channel region between this source/drain;

Interlayer dielectric layer covers this grid, and this interlayer dielectric layer exposes this source/drain of part; And

The source/drain contacting metal is electrically connected with this source/drain respectively.

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